CN101174661A - Production method for type N ohm contact electrode of GaN based power type LED - Google Patents
Production method for type N ohm contact electrode of GaN based power type LED Download PDFInfo
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- CN101174661A CN101174661A CNA2006101141939A CN200610114193A CN101174661A CN 101174661 A CN101174661 A CN 101174661A CN A2006101141939 A CNA2006101141939 A CN A2006101141939A CN 200610114193 A CN200610114193 A CN 200610114193A CN 101174661 A CN101174661 A CN 101174661A
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Abstract
The present invention relates to a preparation method of an N-typed ohm contact electrode of the GaN basic-power-typed LED, which comprises a concealing layer that is deposited on the material structure of GaN basic-power-typed LED; an interdigital-shaped N-GaN electrode is eroded; the photosensitive resist is removed by washing; a separation layer is deposited on the surface of GaN substrate; an electrode is separated; SiO2 concealing layer is eroded; a P-GaN semi-transparent electrode metal system NiAu is prepared by the evaporation of the electronic beam; after the electrode is stripped off, and after the alloy with the ratio between N2 and O2 is 2/1is processed for five minutes at the temperature of 500 C DEG so as to reduce the ohm contact resistance between the metal system NiAu of P-GaN semi-transparent electrode and the P-GaN layer, and to improve the contact strength and the thermal stability of the P-GaN semi-transparent electrode and the P-GaN; finally a P-GaN thickened electrode is lithographic processed so as to complete the preparation of P and N electrode.
Description
Technical field
The present invention is used for semiconductor photoelectronic device manufacturing technology field, is specifically related to design of N-GaN electrode system and manufacture method in a kind of GaN based power type light-emitting diode (LED).
Background technology
Excite gold-tinted fluorescent material (YAG:Ce with InGaN/GaN MQW blue chip
3+) be the most frequently used method for preparing white light LEDs, white light LEDs has energy-saving and environmental protection, cold light source, color rendering index height, response speed is fast, volume is little and outstanding advantage such as long working life.Along with the research of InGaN/GaN MQW blue light material deeply and the steadily improving of power type white light LED device processability, LED moves towards fields such as white-light illuminating from backlight, traffic lights, show label, the Landscape Lighting that is applied to electronic product, and the semiconductor solid light source demonstrates huge application potential as the green solid light source of a new generation's illumination revolution.
When making gallium nitride (GaN) based power type LED, generally adopt silicon dioxide (SiO
2) as masking layer, plasma (orifice) gas coherent method lithographic method (ICP) forms the table top of N-GaN electrode then, makes N metal Ohm contact electrode, plasma chemical vapor deposition process (PECVD) deposition SiO
2In the masking layer process to the rf injury size of GaN substrate, and the SiO of deposition
2The compactness of masking layer and dielectric strength have determined the ICP etching process size to the electric leakage of the damage of luminescent active region and device.The N-GaN doping content is than higher; the general Ti/Al/Ti/Au that adopts makes metal electrode; form ohmic contact easily; but unsteadiness such as the fusing point of metal A l itself is low, easy oxidation; and the counterdiffusion between Al and the Au produces the Kirderdall effect; especially under the condition of working long hours, the Ti layer is limited to the barrier effect of protective layer Au diffusion, and the interior diffusion of Au all can cause electrode thermal stability variation.
Summary of the invention
The objective of the invention is to be, a kind of preparation method of N type Ohm contact electrode of GaN based power type LED is provided, improved the luminous efficiency of GaN based power type light-emitting diode, solved at PECVD deposition SiO
2In the masking layer process to the rf injury of GaN substrate, and technical problem underlying such as N-GaN electrode metal system poor heat stability.
The preparation method of the N type Ohm contact electrode of a kind of GaN based power type LED of the present invention is characterized in that, comprises the steps:
Step 1: extension N-GaN layer, active layer and P-GaN layer successively on Sapphire Substrate form the material structure of GaN based power type LED;
Step 2: on the P-GaN layer on the material structure of GaN based power type LED, adopt PECVD to deposit a layer thickness
SiO
2Masking layer, the method deposition SiO of the PECVD that is adopted
2The method of masking layer, have the rf injury of GaN substrate little, and the deposition SiO
2The advantage that masking layer compactness is good and dielectric strength is high;
Step 3: go out interdigitated N-GaN electrode with photoetching and wet etching, erode SiO
2Masking layer exposes the N-GaN electrode table top that needs etching;
Step 4: remove photoresist, adopt ICP to etch the table top of N-GaN electrode;
Step 5: wet method is removed residue SiO
2Masking layer cleans the GaN substrate of ICP etching;
Step 6: adopt the PECVD method to deposit a layer thickness at GaN substrate surface through ICP etching and cleaning
SiO
2Separator, this SiO
2Separator has high compactness and insulating properties, can stop to produce electric leakage between the P for preparing, N electrode;
Step 7: the N-GaN electrode that goes out optimal design with photoetching and wet etching, the metallization system of electron beam evaporation interdigitated N-GaN electrode, the interdigital dress N-GaN electrode structure of optimal design has solved active layer that ICP is etched away to the loss of light with increase contradiction between the lighting area, improve the luminous power of GaN based power type LED, stripping electrode;
Step 8: behind the stripping electrode, in 650 ℃ of Ar atmosphere of temperature, carry out the 3min of alloying place, reduce the contact resistance of N-GaN electrode and N-GaN layer, improve the thermal stability of N-GaN electrode;
Step 9: the method with photoetching and wet etching erodes SiO
2Masking layer exposes P-GaN electrode table top;
Step 10: electron beam evaporation prepares P-GaN semitransparent electrode metallization system NiAu, stripping electrode;
Step 11: behind the stripping electrode, at N
2: O
2=2: 1min atmosphere alloy temperature carries out Alloying Treatment 5min for 500 ℃, reduces the metallization system NiAu of P-GaN semitransparent electrode and the ohmic contact resistance between the P-GaN layer, improves contact strength and the thermal stability of P-GaN semitransparent electrode and P-GaN;
Step 12: make P-GaN at last by lithography and add thick electrode, electron beam evaporates the metallization system NiAu that P adds thick electrode successively, and stripping electrode is finished the preparation of P, N electrode; Take to make earlier the N-GaN electrode; the metallization system NiAu and the P-GaN that make the P-GaN semitransparent electrode then add thick electrode; avoided the interior diffusion of N-GaN electrode bonding protective layer gold when 650 ℃ of alloyings of higher temperature, and to the influence of P-GaN Ohmic electrode thermal stability.
Wherein the metallization system of N-GaN electrode comprises ohmic contact layer titanium, high reflection layer aluminium, barrier layer platinum and the bonding protective layer gold of growth successively; This barrier layer platinum has wherein stoped the interior diffusion of bonding protective layer gold; avoided N-GaN electrode contact resistance in alloying or long-term work process to increase and the reverse leakage increase; improve N-GaN electrode thermal stability, the specific contact resistivity rate 7*10 that the transmission line method is calculated
-8Ω cm
2
Wherein said PECVD deposition SiO
2Masking layer and SiO
2Separator, being evacuated to pressure in the PECVD vacuum chamber is less than 10
-5Pa, heating up 300 ℃ also keeps stable, is to be warming up to 300 ℃ also to keep stablizing in vacuum chamber, charges into the N of gas flow 392sccm to vacuum chamber
2, 150sccm SiH
4N with 1420sccm
2O to chamber pressure be 0.7torr, apply 20W radio-frequency power starter 2 seconds, radio-frequency power is reduced to 15W and begins to deposit SiO then
2Mask layer.
Description of drawings
For further instruction content of the present invention, below in conjunction with concrete execution mode the present invention is explained in detail, wherein:
Fig. 1 is a GaN based power type LED epitaxial material structure generalized section;
Fig. 2 is that PECVD deposits a layer thickness on Fig. 1
SiO
2The schematic diagram of masking layer 5;
Fig. 3 is the shape that photoetching and wet etching go out N-GaN electrode 20 on Fig. 2, erodes SiO
2Masking layer 5 exposes the schematic diagram of the table top 6 of the N-GaN electrode 20 want etching;
Behind Fig. 4 Fig. 3 ICP dry etching, the schematic diagram of the table top 7 of N-GaN electrode 20;
Fig. 5 is that Fig. 4 wet method is removed residue SiO
2Behind the masking layer 5, the schematic diagram of the table top 7 of N-GaN electrode 20;
Fig. 6 adopts the PECVD method to deposit a layer thickness 2 on Fig. 5
SiO
2Separator 8 schematic diagrames;
Fig. 7 is the schematic diagram in the metallization system of Fig. 6 electron beam evaporation N-GaN20 electrode;
Fig. 8 is the schematic diagram that electron beam evaporation prepares the metallization system of P-GaN electrode translucent 13 on Fig. 7;
Fig. 9 is that electron beam evaporation EB prepares the metallization system schematic diagram that P-GaN adds thick electrode 14 on Fig. 8;
Figure 10 is interdigitated N-GaN electrode 20 of the present invention and P-GaN electrode 30 structure vertical views.
Embodiment
A kind of N type Ohm contact electrode and preparation method of GaN based power type LED, the process of its making generally is to adopt the method for extension to form N-GaN layer 2, active layer 3 and P-GaN layer 4 on Sapphire Substrate 1, form the material structure 40 of GaN based power type LED, as shown in Figure 1.
On the upper surface P-GaN layer 4 of the material structure of Sapphire Substrate 1 extension GaN based power type LED (deletion 40), adopt the PECVD method to deposit a layer thickness
SiO
2Masking layer 5, as shown in Figure 2, wherein said PECVD deposition SiO
2Masking layer 5 is evacuated to pressure less than 10-5Pa in the PECVD vacuum chamber, heats up 300 ℃ also to keep stable, is to be warming up to 300 ℃ also to keep stablizing in vacuum chamber, charges into the N of gas flow 392sccm to vacuum chamber
2, the SiH of 150sccm
4N with 1420sccm
2O to chamber pressure be 0.7torr, apply 20W radio-frequency power starter 2 seconds, radio-frequency power is reduced to 15W and begins to deposit SiO then
2 Mask layer 5 and SiO
2Separator 8.The PECVD deposition SiO that is adopted
2The method of masking layer, have the rf injury of GaN substrate little, and the deposition SiO
2The advantage that masking layer compactness is good and dielectric strength is high.
According to interdigitated N-GaN electrode 20 structures, erode SiO
2Masking layer 5 exposes the N-GaN electrode mesa region 6 that needs etching, as shown in Figure 3; The method of employing ICP dry etching etches the table top 7 of N-GaN electrode, as shown in Figure 4; Wet method is removed residue SiO
2Masking layer 5, the GaN substrate structure after the etching as shown in Figure 5.
Adopt the PECVD method to deposit a layer thickness at GaN substrate surface through ICP etching and cleaning
SiO
2Separator 8, as shown in Figure 6, this SiO
2Compactness and insulating properties that separator 8 is high produce electric leakage between the P that can prevent in preparation, the N electrode.
Photoetching and wet etching go out the interdigitated N-GaN electrode 20 (consulting Figure 10) of optimal design; electron beam evaporates the metallization system of N-GaN electrode 20 successively; ohmic contact layer titanium 9, high reflection layer aluminium 10, barrier layer platinum 11 and bonding protective layer gold 12; as shown in Figure 7; behind the stripping electrode, in 650 ℃ of Ar atmosphere of temperature, carry out Alloying Treatment 3min, reduce the contact resistance of N-GaN electrode 20 and N-GaN layer 2; improve the thermal stability of N-GaN electrode, the specific contact resistivity rate 7*10 that the TLM method is calculated
-8Ω cm
2 Barrier layer platinum 11 has stoped the interior diffusion of bonding protective layer gold 12 in the N-GaN electrode 20 metallization systems, has avoided N-GaN electrode 20 contact resistance in alloying or long-term work process to increase and the reverse leakage increase, improves N-GaN electrode 20 thermal stabilitys; The interdigital dress N-GaN electrode structure 20 of optimal design has solved active layer that ICP is etched away to the loss of light with increase contradiction between the lighting area, improves the luminous power of GaN based power type LED.
Method with photoetching and wet etching erodes SiO
2Separator 8 exposes P-GaN electrode 30 zones, as shown in Figure 8; Electron beam evaporates preparation P-GaN semi-transparent metals polarizing electrode system Ni/Aul3 successively, as shown in Figure 9, and behind the stripping electrode, at N
2: O
2=2: 1min atmosphere alloy temperature carries out Alloying Treatment 5min for 500 ℃, reduces the ohmic contact resistance of P-GaN semitransparent electrode system Ni/Aul3 and P-GaN layer 4, improves the contact strength and the thermal stability of metal level and P-GaN layer 4;
Make P-GaN at last by lithography and add thick electrode 14, electron beam evaporates the thickening electrode metal system Ni/Au of P electrode 14 successively.Take to make earlier N-GaN electrode 20, make P-GaN electrode 30 (consulting Figure 10) then, avoided the interior diffusion of N-GaN electrode 20 bonding protective layer gold 12 when 650 ℃ of alloyings of higher temperature, and to the influence of P-GaN electrode 30 thermal stabilitys.
Claims (3)
1. the preparation method of the N type Ohm contact electrode of a GaN based power type LED is characterized in that, comprises the steps:
Step 1: on Sapphire Substrate successively outside N-GaN layer, active layer and P-GaN layer, form the material structure of GaN based power type LED;
Step 2: on the P-GaN layer on the material structure of GaN based power type LED, adopt PECVD to deposit a layer thickness 5000
SiO
2Masking layer, the method deposition SiO of the PECVD that is adopted
2The method of masking layer, have the rf injury of GaN substrate little, and the deposition SiO
2The advantage that masking layer compactness is good and dielectric strength is high;
Step 3: go out interdigitated N-GaN electrode with photoetching and wet etching, erode SiO
2Masking layer exposes the N-GaN electrode table top that needs etching;
Step 4: remove photoresist, adopt ICP to etch the table top of N-GaN electrode;
Step 5: wet method is removed residue SiO
2Masking layer cleans the GaN substrate of ICP etching;
Step 6: adopt the PECVD method to deposit a layer thickness 2000 at GaN substrate surface through ICP etching and cleaning
SiO
2Separator, this SiO
2Separator has high compactness and insulating properties, can stop to produce electric leakage between the P for preparing, N electrode;
Step 7: the N-GaN electrode that goes out optimal design with photoetching and wet etching, the metallization system of electron beam evaporation interdigitated N-GaN electrode, the interdigital dress N-GaN electrode structure of optimal design has solved active layer that ICP is etched away to the loss of light with increase contradiction between the lighting area, improve the luminous power of GaN based power type LED, stripping electrode;
Step 8: behind the stripping electrode, in 650 ℃ of Ar atmosphere of temperature, carry out Alloying Treatment 3min, reduce the contact resistance of N-GaN electrode and N-GaN layer, improve the thermal stability of N-GaN electrode;
Step 9: the method with photoetching and wet etching erodes SiO
2Masking layer exposes P-GaN electrode table top;
Step 10: electron beam evaporation prepares P-GaN semitransparent electrode metallization system NiAu, stripping electrode;
Step 11: behind the stripping electrode, at N
2: O
2=2: 1min atmosphere alloy temperature carries out Alloying Treatment 5min for 500 ℃, reduces the metallization system NiAu of P-GaN semitransparent electrode and the ohmic contact resistance between the P-GaN layer, improves contact strength and the thermal stability of P-GaN semitransparent electrode and P-GaN;
Step 12: make P-GaN at last by lithography and add thick electrode, electron beam evaporates the metallization system NiAu that P adds thick electrode successively, and stripping electrode is finished the preparation of P, N electrode; Take to make earlier the N-GaN electrode; the metallization system NiAu and the P-GaN that make the P-GaN semitransparent electrode then add thick electrode; avoided the interior diffusion of N-GaN electrode bonding protective layer gold when 650 ℃ of alloyings of higher temperature, and to the influence of P-GaN Ohmic electrode thermal stability.
2. the preparation method of the N type Ohm contact electrode of a kind of GaN based power type LED according to claim 1, it is characterized in that wherein the metallization system of N-GaN electrode comprises ohmic contact layer titanium, high reflection layer aluminium, barrier layer platinum and the bonding protective layer gold of growth successively; This barrier layer platinum has wherein stoped the interior diffusion of bonding protective layer gold; avoided N-GaN electrode contact resistance in alloying or long-term work process to increase and the reverse leakage increase; improve N-GaN electrode thermal stability, the specific contact resistivity rate 7*10 that the transmission line method is calculated
-8Ω cm
2
3. the preparation method of the N type Ohm contact electrode of a kind of GaN based power type LED according to claim 1 is characterized in that, wherein said PECVD deposition SiO
2Masking layer and SiO
2Separator, being evacuated to pressure in the PECVD vacuum chamber is less than 10
-5Pa, heating up 300 ℃ also keeps stable, is to be warming up to 300 ℃ also to keep stablizing in vacuum chamber, charges into the N of gas flow 392sccm to vacuum chamber
2, 150sccm SiH
4N with 1420sccm
2O applies 20W radio-frequency power starter 2 seconds to chamber pressure 0.7torr, and radio-frequency power is reduced to 15W and begins to deposit SiO then
2Mask layer.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102376837A (en) * | 2010-08-23 | 2012-03-14 | 亚世达科技股份有限公司 | Light emitting diode |
| CN102931300A (en) * | 2012-11-20 | 2013-02-13 | 无锡华润华晶微电子有限公司 | Method for manufacturing back metallic reflector array in manufacturing process of GaN-based LED |
| CN103956415A (en) * | 2014-05-08 | 2014-07-30 | 中国科学院半导体研究所 | Method for preparing GaN-based light-emitting diode |
| CN116914558A (en) * | 2023-09-13 | 2023-10-20 | 苏州长光华芯光电技术股份有限公司 | Semiconductor laser contact electrode and preparation method thereof |
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| JP4018177B2 (en) * | 1996-09-06 | 2007-12-05 | 株式会社東芝 | Gallium nitride compound semiconductor light emitting device |
| CN1499651A (en) * | 2002-11-05 | 2004-05-26 | 炬鑫科技股份有限公司 | Method for manufacturing white light LED and illuminator |
| KR100826424B1 (en) * | 2003-04-21 | 2008-04-29 | 삼성전기주식회사 | Semiconductor type light emitting diode and manufacturing method thereof |
| US7166483B2 (en) * | 2004-06-17 | 2007-01-23 | Tekcore Co., Ltd. | High brightness light-emitting device and manufacturing process of the light-emitting device |
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2006
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102376837A (en) * | 2010-08-23 | 2012-03-14 | 亚世达科技股份有限公司 | Light emitting diode |
| CN102931300A (en) * | 2012-11-20 | 2013-02-13 | 无锡华润华晶微电子有限公司 | Method for manufacturing back metallic reflector array in manufacturing process of GaN-based LED |
| CN103956415A (en) * | 2014-05-08 | 2014-07-30 | 中国科学院半导体研究所 | Method for preparing GaN-based light-emitting diode |
| CN116914558A (en) * | 2023-09-13 | 2023-10-20 | 苏州长光华芯光电技术股份有限公司 | Semiconductor laser contact electrode and preparation method thereof |
| CN116914558B (en) * | 2023-09-13 | 2023-12-19 | 苏州长光华芯光电技术股份有限公司 | Semiconductor laser contact electrode and preparation method thereof |
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| CN100461476C (en) | 2009-02-11 |
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Assignee: Yangzhou Zhongke Semiconductor Lighting Co., Ltd. Assignor: Semiconductor Inst., Chinese Academy of Sciences Contract record no.: 2010320000572 Denomination of invention: Production method for type N ohm contact electrode of GaN based power type LED Granted publication date: 20090211 License type: Exclusive License Open date: 20080507 Record date: 20100510 |
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Effective date of registration: 20110127 Address after: 225009 No. 119 Hanjiang Road, Jiangsu, Yangzhou Patentee after: Yangzhou Zhongke Semiconductor Lighting Co., Ltd. Address before: 100083 Beijing Qinghua East Road, Haidian District, No. 35 Patentee before: Semiconductor Inst., Chinese Academy of Sciences |