CN101154032B - Photo mask blank material, photo mask and manufacture method, photo mask midbody, pattern copy method of the same - Google Patents
Photo mask blank material, photo mask and manufacture method, photo mask midbody, pattern copy method of the same Download PDFInfo
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- CN101154032B CN101154032B CN2007101543876A CN200710154387A CN101154032B CN 101154032 B CN101154032 B CN 101154032B CN 2007101543876 A CN2007101543876 A CN 2007101543876A CN 200710154387 A CN200710154387 A CN 200710154387A CN 101154032 B CN101154032 B CN 101154032B
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- photomask
- resist film
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention provides a photomask blanks which prevents the peeling of the periphery of the photomask and the particles generated by the peeling of the photomask in the process of carrying and installing on the lithography machine. The method of producing the photomask blanks comprises following steps: a film forming step which forms the photomask on the main surface along the peripheral portion of the periphery of the main surface of the light transmittance substrate as the non-forming area; a coating step which coats the photoresist film to the area including the photomask and covers the periphery of the photomask by the photoresist film; a photoresist film periphery removing step which removes the peripheral portion of the photoresist film so as to expose the peripheral portion of the photoresist film.
Description
Technical field
The present invention relates to the photomask that copies middle use and the material negative thereof of pattern in photoetching (lithography) technology---the clone method of photomask blank (photo mask blank), their manufacture method and photo mask midbody and pattern.
Background technology
In the photoetching technique of prior art, use photomask, carry out copying of pattern.Photomask produces as the material negative with photomask blank.
Photomask blank, on the first type surface of the light-transmitting substrate that is made of quartz glass etc., for example forming, the photomask take chromium as principal ingredient consists of.In the manufacturing of this photomask blank, at first precise finiss quartz glass etc. obtains light-transmitting substrate (grinding step).Then, adopt sputtering method etc., on the first type surface of the light-transmitting substrate that obtains, form for example photomask take chromium as principal ingredient (film formation process).
Then, on the photomask of photomask blank, coating resist film (working procedure of coating), optionally with this resist film exposure (exposure process), resist film after will exposing again develops, carry out etch processes, Butut on photomask, thus produce photomask (etch processes operation).
, in any one of photomask and photomask blank, when it was carried between each operation, the peripheral part of light-transmitting substrate and side surface part all will be controlled.At this moment, at the peripheral part of the light-transmitting substrate that becomes grip portion [=marginal part to be held by hand or tools] and the photomask of side surface part formation, just might peel off because controlling.After photomask was stripped from, overburden was attached on the photomask pattern as particulate, became the reason that produces the defectives such as photomask is residual.And, in order to remove this overburden, have to increase the wash number of photomask blank or photomask.
Therefore, proposed following scheme: the outer peripheral portion at photomask blank does not form photomask, reduces the overburden (particulate) of the photomask when controlling photomask blank.In other words, disclose in 2004/051369 trumpeter's volume (below be called " patent documentation 1 ") in the world, only disclose the photomask blank that forms photomask, the peripheral part of photomask blank is used as the laser scanning that does not become diaphragm area in the part except the peripheral part of photomask blank.In this photomask blank, light-transmitting substrate is of a size of: Yi Bian be more than the 300mm, the width that does not become diaphragm area of photomask becomes more than the 3mm.In this photomask blank, when processing, particularly when controlling peripheral part and side surface part, can prevent the particulate from the side of light-transmitting substrate.
In above-mentioned patent documentation 1 disclosed photomask blank, prevent from the photomask of the outer peripheral portion of light-transmitting substrate and lateral parts peel off, prevent can see certain effect on the particulate.
In the film formation process of the photomask of this photomask blank, when for example adopting sputtering film-forming, in order to form into diaphragm area, use the sputter mask to shield.At this moment, becoming near diaphragm area and the boundary that does not become diaphragm area, the interval training sputter raw material out from the sputter mask is attached on the light-transmitting substrate, and the formation thickness is less than setting thickness and the irregular film of thickness of photomask.This film often becomes the state that thickness reduces gradually along the perimeter sides of light-transmitting substrate.
This film is so easily peel off owing to thickness is irregular.Specifically, this film will be peeled off inevitably in the carrying of photomask blank and in the upper installation of litho machine (aligner, exposure machine) and other many occasions, is attached on the photomask as particulate.
Therefore, in this photomask blank, to produce inevitably photomask residual etc., hinder exposure.In addition, in order to remove this overburden, for example have to increase the wash number before film (pellicle) forms.
Summary of the invention
Therefore, the present invention develops for above-mentioned situation, its purpose is to provide in the processing that can install in carrying and toward litho machine etc., prevents peeling off, suppressing to result from peeling off of photomask of photomask peripheral part and the photomask blank of the particulate that produces and the manufacture method of this photomask blank.
In addition, other purpose of the present invention, after being to provide this photomask blank of use, can in carrying and the processing that install toward litho machine etc., prevent peeling off, suppressing to result from peeling off of photomask and the manufacture method of the particulate that produces, the photo mask midbody of enhancing productivity and photomask and this photomask of photomask peripheral part.
Another object of the present invention is and can improves the yield rate of exposure process in the manufacturing of photomask, reduces cleaning (cleaning before the film forms) number of times in the photomask manufacturing process, enhances productivity.
Another purpose of the present invention is to provide the clone method of the pattern that uses this photomask.
In order to solve above-mentioned problem, to reach described purpose, the photomask blank that the present invention relates to has some in the following structure.
[consisting of 1]
It is characterized in that: (this photomask blank is on the first type surface at light-transmitting substrate at photomask blank, form photomask, then after this photomask forms resist film, make) in, form the zone of photomask, greater than the zone that forms resist film, the peripheral part of photomask exposes laterally from the periphery of resist film.
In the photomask blank that the present invention relates to formation 1, because form the zone of photomask, greater than the zone that forms resist film, the peripheral part of photomask, expose laterally from the periphery of resist film, so in later process, the peripheral part of photomask is removed.After the peripheral part of photomask is removed, can prevent peeling off of photomask peripheral part, suppress to result from peeling off of photomask and the particulate that produces.
In addition, in the present invention, reach at " on the first type surface at light-transmitting substrate, form photomask " in the statement of " forming resist film at photomask " etc., " ... on ", both can be directly, also can be to be situated between the indirect of other film arranged.On one point, in following each consists of too.
[consisting of 2]
It is characterized in that: (this photomask blank is on the first type surface at light-transmitting substrate at photomask blank, form photomask, then after this photomask covers this photomask ground formation resist film, make) in, resist film covers the zone of the peripheral part of photomask, is exposed.
In the photomask blank that the present invention relates to formation 2, because resist film (positive resist) covers the zone of the peripheral part of photomask and is exposed, so in later process, remove after the zone of the peripheral part of the covering photomask of resist film is developed.And then in later process, the peripheral part of photomask is removed.After the peripheral part of photomask is removed, can prevent peeling off of photomask peripheral part, suppress to result from peeling off of photomask and the particulate that produces.
The manufacture method of the photomask blank that the present invention relates to has some in the following structure.
[consisting of 3]
It is characterized in that: form in the film formation process and the manufacture method at the photomask blank of the working procedure of coating of photomask coating resist film of photomask having at the first type surface of light-transmitting substrate, in film formation process, will be along the outer peripheral portion of the periphery of the first type surface of the light-transmitting substrate non-formation zone as photomask; In working procedure of coating, the zone coating resist film to comprising the zone that forms photomask utilizes resist film to cover the periphery of photomask; Behind working procedure of coating, have the resist film periphery and remove operation, this resist film periphery is removed the peripheral part that operation is removed the resist film of coating, thereby the periphery of photomask is exposed.
In the manufacture method of the photomask blank that the present invention relates to formation 3, because behind the working procedure of coating of coating resist film, remove the peripheral part of the resist film of coating, thereby the periphery of photomask exposed, so in later process, the peripheral part of photomask is removed.After the peripheral part of photomask is removed, can prevent peeling off of photomask peripheral part, suppress to result from peeling off of photomask and the particulate that produces.
[consisting of 4]
It is characterized in that: in the manufacture method of the photomask blank with formation 3, the resist film periphery is removed operation, by the rear side exposure from light-transmitting substrate, thereby can be with photomask as photomask, the operation that utilization is removed the development in the later process of peripheral part sensitization of resist film, and utilize the later process of the peripheral part of removing resist film of developing to consist of.
In the manufacture method of the photomask blank that the present invention relates to formation 4, because the back of the body table side exposure from light-transmitting substrate, thereby can be with photomask as photomask, utilization is removed the development in the later process of peripheral part sensitization of resist film, recycling is developed and is removed the peripheral part of resist film, so and then in later process, the peripheral part of photomask is removed.After the peripheral part of photomask is removed, can prevent peeling off of photomask peripheral part, suppress to result from peeling off of photomask and the particulate that produces.
[consisting of 5]
It is characterized in that: form in the film formation process and the manufacture method at the photomask blank of the working procedure of coating of photomask coating resist film of photomask having at the first type surface of light-transmitting substrate, in working procedure of coating, zone coating resist film to comprising the zone that forms photomask utilizes resist film to cover the periphery of photomask; Behind working procedure of coating, have the resist film periphery and remove operation, this resist film periphery is removed the peripheral part that operation is removed the resist film of coating, thereby the periphery of photomask is exposed.
In the manufacture method of the photomask blank that the present invention relates to formation 5, because behind the working procedure of coating of coating resist film, remove the peripheral part of the resist film of coating, thereby the periphery of photomask exposed, so in later process, the peripheral part of photomask is removed.After the peripheral part of photomask is removed, can prevent peeling off of photomask peripheral part, suppress to result from peeling off of photomask and the particulate that produces.
[consisting of 6]
It is characterized in that: consist of 3 or consist of in the manufacture method of 5 photomask blank having, the resist film periphery is removed operation, after the regioselectivity ground of removing resist film is exposed, the operation that can utilize the development in the later process that makes resist film sensitization to remove, and the later process of utilizing development to remove the peripheral part of resist film consists of.
In the manufacture method of the photomask blank that the present invention relates to formation 6, because after the regioselectivity ground exposure of removing resist film, can utilize the development in the later process that makes resist film sensitization to remove, remove the peripheral part of resist film with utilizing to develop, so and then in later process, the peripheral part of photomask is removed.After the peripheral part of photomask is removed, can prevent peeling off of photomask peripheral part, suppress to result from peeling off of photomask and the particulate that produces.
[consisting of 7]
It is characterized in that: consist of 3 or consist of in the manufacture method of 5 photomask blank having, the resist film periphery is removed operation, after making solvent and the peripheral part of resist film contacting, removes the peripheral part of this resist film.
In the manufacture method of the photomask blank that the present invention relates to formation 7, because after making solvent and the peripheral part of resist film contacting, remove the peripheral part of this resist film, so in later process, the peripheral part of photomask is removed.After the peripheral part of photomask is removed, can prevent peeling off of photomask peripheral part, suppress to result from peeling off of photomask and the particulate that produces.
[consisting of 8]
It is characterized in that: form in the film formation process and the manufacture method at the photomask blank of the working procedure of coating of described photomask coating resist film of photomask having at the first type surface of light-transmitting substrate, in working procedure of coating, make the area of application of resist film, formation less than photomask is regional, thereby becomes the state of the peripheral part that exposes photomask.
In the manufacture method of the photomask blank that the present invention relates to formation 8, because in the working procedure of coating of coating resist film, make the area of application of resist film, formation zone less than photomask, thereby become the state of the peripheral part that exposes photomask, so in later process, the peripheral part of photomask is removed.After the peripheral part of photomask is removed, can prevent peeling off of photomask peripheral part, suppress to result from peeling off of photomask and the particulate that produces.
Like this, in the present invention, in the carrying when using photomask and the processing of installing toward litho machine etc., owing to not producing peeling off of photomask peripheral part, the particulate that produces so can suppress to result from peeling off of photomask.
In other words, the present invention can be provided at carrying and the processing of installing on the litho machine etc. in, prevent peeling off, suppressing to result from peeling off of photomask and the manufacture method of the particulate that produces, the photomask blank of enhancing productivity and this photomask blank of photomask peripheral part.
The photo mask midbody that the present invention relates to has some in the following structure.
[consisting of 9]
It is characterized in that: the first type surface at light-transmitting substrate forms photomask, forms in the photo mask midbody of resist film at this photomask, at the outer peripheral portion along the periphery of the first type surface of light-transmitting substrate, has the non-formation zone of photomask and resist film; The end face of the periphery of photomask and resist film, consistent with direction perpendicular to the first type surface of light-transmitting substrate in fact.
In the photo mask midbody that the present invention relates to formation 9, because at the outer peripheral portion along the periphery of the first type surface of light-transmitting substrate, non-formation zone with photomask and resist film, the end face of the periphery of photomask and resist film, consistent with direction perpendicular to the first type surface of light-transmitting substrate in fact, so can prevent peeling off of photomask peripheral part, suppress to result from peeling off of photomask and the particulate that produces.
The photomask that the present invention relates to has some in the following structure.
[consisting of 10]
It is characterized in that: form in the photomask of photomask of predetermined pattern possessing at the first type surface of light-transmitting substrate, at the outer peripheral portion along the periphery of the first type surface of light-transmitting substrate, have non-formations that does not form photomask regional; Near the end face of the periphery of the photomask that faces [=located adjacent to] non-formation zone, the thickness of this photomask becomes the zone less than the setting thickness of this photomask, becomes to the distance of the boundary in this photomask and the non-formation zone zone less than 500 μ m.
In the photomask that the present invention relates to formation 10, because at the outer peripheral portion along the periphery of the first type surface of light-transmitting substrate, has the non-formation zone that does not form photomask, near the end face of the periphery that faces the regional photomask of non-formation, the thickness of this photomask becomes the zone less than the setting thickness of this photomask, become to the distance of the boundary in this photomask and the non-formation zone zone less than 500 μ m, so can prevent peeling off of photomask peripheral part, suppress to result from peeling off of photomask and the particulate that produces.
[consisting of 11]
It is characterized in that: consist of in 10 the photomask having, the thickness of photomask becomes the zone less than the setting thickness of this photomask, is that thickness becomes less than 98% the zone of setting thickness.
In the photomask that the present invention relates to formation 11, because the thickness of photomask becomes the zone less than the setting thickness of this photomask, that thickness becomes less than 98% the zone of setting thickness, so can prevent peeling off of photomask peripheral part, suppress to result from peeling off of photomask and the particulate that produces.
[consisting of 12]
It is characterized in that: form in the photomask of photomask of predetermined pattern possessing at the first type surface of light-transmitting substrate, at the outer peripheral portion along the periphery of the first type surface of light-transmitting substrate, have non-formations that does not form photomask regional; Face the non-end face that forms the periphery of regional photomask, become and this photomask has been carried out the interface in the etched zone of etch processes.
In the photomask that the present invention relates to formation 12, because at the outer peripheral portion along the periphery of the first type surface of light-transmitting substrate, has the non-formation zone that does not form photomask, face the non-end face that forms the periphery of regional photomask, become and this photomask carried out the interface in the etched zone of etch processes, so can prevent peeling off of photomask peripheral part, suppress to result from peeling off of photomask and the particulate that produces.
The manufacture method of the photomask that the present invention relates to has some in the following structure.
[consisting of 13]
It is characterized in that: (this photomask blank is on the first type surface at light-transmitting substrate using photomask blank, form photomask, then after forming resist film, makes this photomask), form in the manufacture method of photomask of predetermined pattern at photomask, have the operation in zone of the Rack of the peripheral part of removing photomask.
In having the manufacture method that consists of 13 the photomask that the present invention relates to, because remove the zone of Rack of the peripheral part of photomask, so can prevent peeling off of photomask peripheral part, suppress to result from peeling off of photomask and the particulate that produces.
[consisting of 14]
It is characterized in that: (this photomask blank is on the first type surface at light-transmitting substrate using photomask blank, form photomask, then form resist film at this photomask, form the zone of photomask, greater than the zone that forms this resist film, the peripheral part of photomask, make laterally from the periphery of resist film) with exposing, form in the manufacture method of photomask of predetermined pattern at photomask, have: to the pattern of the regulation of resist film, after exposing, developing, form the operation of resist pattern; The resist pattern as mask, is optionally removed photomask, thereby when this photomask forms the pattern of regulation, remove the operation of the peripheral part of the photomask that exposes laterally from the periphery of resist film.
In the manufacture method of the photomask that the present invention relates to formation 14, because remove the peripheral part of the photomask that exposes laterally from the periphery of resist film, so can prevent peeling off of photomask peripheral part, suppress to result from peeling off of photomask and the particulate that produces.
[consisting of 15]
It is characterized in that: (this photomask blank is on the first type surface at light-transmitting substrate using photomask blank, form photomask, then form resist film at this photomask, cover that the zone of peripheral part of the photomask of this resist film makes with being exposed), form in the manufacture method of photomask of predetermined pattern at photomask, have: to the pattern of the regulation of resist film, after exposing, developing, form the operation of resist pattern; The resist pattern as mask, is optionally removed photomask, thereby when this photomask forms the pattern of regulation, remove the operation of the peripheral part of the photomask that exposes laterally from the periphery of resist film.
In the manufacture method of the photomask that the present invention relates to formation 15, because remove the peripheral part of the photomask that exposes laterally from the periphery of resist film, so can prevent peeling off of photomask peripheral part, suppress to result from peeling off of photomask and the particulate that produces.
[consisting of 16]
It is characterized in that: (this photomask blank is on the first type surface at light-transmitting substrate using photomask blank, form photomask, then after forming resist film, makes this photomask), form in the manufacture method of photomask of predetermined pattern at photomask, have: at the pattern to the regulation of resist film, when exposing, to the zone of the peripheral part of the photomask that is equivalent to resist film, the operation of exposing; After the resist film development, form the operation of resist pattern; The resist pattern as mask, is optionally removed photomask, thereby when this photomask forms the pattern of regulation, remove the operation of the peripheral part of the described photomask that exposes laterally from the periphery of resist film.
In the photomask that the present invention relates to formation 16, because remove the peripheral part of the described photomask that exposes laterally from the periphery of resist film, so can prevent peeling off of photomask peripheral part, suppress to result from peeling off of photomask and the particulate that produces.
[consisting of 17]
It is characterized in that: in having the manufacture method that consists of any photomask in 13～formation 16, the peripheral part of the photomask that is removed comprises thickness less than at least a portion in the zone of the setting thickness of photomask.
In the manufacture method of the photomask that the present invention relates to formation 17, because the peripheral part of the photomask that is removed, comprise thickness less than at least a portion in the zone of the setting thickness of photomask, so can prevent peeling off of photomask peripheral part, suppress to result from peeling off of photomask and the particulate that produces.
In other words, after the present invention can provide and use above-mentioned the sort of photomask blank, in carrying and the processing of installing toward litho machine etc., prevent peeling off, suppressing to result from peeling off of photomask and the manufacture method of the particulate that produces, the photo mask midbody of enhancing productivity and photomask and this photomask of photomask peripheral part.
In other words, the present invention can improve the yield rate of exposure process in the manufacturing of photomask, reduces cleaning (cleaning before the film forms) number of times in the photomask manufacturing process, enhances productivity.
The clone method of the pattern that the present invention relates to has some in the following structure.
[consisting of 18]
It is characterized in that: use to have to consist of 10～consist of any photomask in 11 or employing to have and consist of 13～consist of the photomask that the manufacture method of any photomask in 17 is made; utilization has the machine of describing of LASER Light Source; with the film formed pattern of the shading of this photomask, copy to and be replicated on the body.
In the clone method of the pattern that the present invention relates to formation 18; because the photomask that the manufacture method of the photomask that the photomask that use the present invention relates to or employing the present invention relates to is made; utilization has the machine of describing of LASER Light Source; with the film formed pattern of the shading of this photomask; copy to and be replicated on the body; so can prevent peeling off of photomask peripheral part, suppress to result from peeling off of photomask and the particulate that produces, thereby can carry out well copying of pattern.
Description of drawings
Fig. 1 is the sectional view of each operation of the manufacture method of the photomask blank that the present invention relates to of expression.
Fig. 2 is the sectional view that is illustrated in the structure of the photomask blank that forms photomask on the whole first type surface of light-transmitting substrate.
The sectional view of Fig. 3 state that to be expression expose to the peripheral part of resist film.
Fig. 4 is the sectional view that the state that photomask exposes to the peripheral part of resist film is used in expression.
Fig. 5 is the sectional view of the structure of the photo mask midbody that the present invention relates to of expression.
Fig. 6 is the sectional view of structure of the critical piece of the photomask that the present invention relates to of expression.
Embodiment
Below, with reference to accompanying drawing, tell about and implement best embodiment of the present invention.
(embodiment of the manufacture method of photomask blank)
Below, according to the order of each operation, tell about the manufacture method of the photomask blank that the present invention relates to.In addition, by the manufacture method of the photomask blank implementing the present invention relates to, can make the photomask blank that the present invention relates to.
[1] film formation process
Fig. 1 is the sectional view of each operation of the manufacture method of the photomask blank that the present invention relates to of expression.
At first, shown in (a) among Fig. 1, the first type surface 1a of the light-transmitting substrate 1 that precise finiss is made of quartz glass etc. on the first type surface 1a of this light-transmitting substrate 1, adopts sputtering method etc., forms photomask 2.
As light-transmitting substrate 1, for example can use the material of the thickness about 5mm～15mm.As photomask 2, be suitable for the material that adopts take chromium as principal ingredient, but be not limited to this.In addition, photomask 2 can also be the film that sees through the semi-transparency of part exposure light.And then photomask 2 can also be the film of stacked a plurality of film (for example a plurality of photomasks or photomask and half see through film).
Fig. 2 is the sectional view that is illustrated in the structure of the photomask blank that forms photomask on the whole first type surface of light-transmitting substrate.
In the formation of photomask, as shown in Figure 2, can adopt sputtering method etc., form photomask 2 at the whole first type surface 1a of light-transmitting substrate 1., after the whole first type surface 1a of light-transmitting substrate 1 forms photomask 2, easily produce following harmful effect.In other words, the material of photomask 2 can be gone to the upper film forming of end face (side) 1b of light-transmitting substrate 1.The film of this end face part when later process such as the carrying in the front and back of the operation that applies resist film to light-transmitting substrate 1 etc., when controlling light-transmitting substrate 1, becomes particulate after peeling off.Like this, preferably will be along the part of the periphery of the first type surface 1a of light-transmitting substrate 1, stay as the non-formation zone of photomask 2.With the peripheral part of the first type surface 1a of light-transmitting substrate 1, behind the non-formation of film zone, can eliminate producing above-described the sort of particulate and worry.In addition, the non-width that forms the zone of photomask 2, the distance of periphery that is preferably in the first type surface 1a of light-transmitting substrate 1 is in the scope about 1mm～10mm.
When utilizing sputtering method to form photomask 2, for the regional 2a of non-formation is set, preferably cover along the part of the periphery of the first type surface 1a of light-transmitting substrate 1, carry out sputter.Interval training sputter raw material out from light-transmitting substrate 1 and sputter mask is attached on the light-transmitting substrate 1 but at this moment.Its result along the periphery of photomask 2, forms the film 2b setting thickness, that thickness is irregular that thickness does not reach photomask 2.For example: the setting thickness of supposing photomask 2 is 80nm (800
)～150nm (1500
) between setting.Under this situation, in the perimeter sides of this photomask 2, form from this setting thickness and reduce gradually so that become the irregular regional 2b of thickness of zero (non-formation).Usually, so that (width of 1mm～1.5mm) for example forms at the periphery of photomask 2 and not reach the part 2b that sets thickness more than the 1mm.Here, so-called " setting thickness " is the thickness of setting as photomask.Like this, setting thickness is exactly the thickness of the part beyond the above-mentioned periphery, but for simplicity, can be used as near the thickness of film central authorities.In addition, after the employing tracer method was measured, the thickness deviation of setting the thickness part became 30nm (300
) below.Different therewith, at above-mentioned periphery, exist the thickness deviation to become 50nm (500
) above part.
The regional 2b that the thickness of the perimeter sides of this photomask 2 is irregular becomes the generating source of particulate after might peeling off.In the present invention, in the later process of telling about later, by etch processes etc., remove the irregular regional 2b of this thickness.In other words, the present invention can eliminate above-mentioned the sort of thickness deviation becomes 50nm (500
) above part.
[2] resist working procedure of coating
Then, shown in (b) among Fig. 1, on the photomask 2 that light-transmitting substrate 1 forms, the coating anticorrosive additive material forms resist film 3.The formation zone (the area of application of anticorrosive additive material) of this resist film 3, the whole formation that preferably comprises photomask 2 is regional.In other words, resist film 3 is contained whole photomask 2 ground and is formed, and then also forms at the regional 2a of non-formation of photomask 2.But resist film 3 preferably only forms at the first type surface 1a of light-transmitting substrate 1.Its reason is: resist film just might produce particulate after the resist film of this part is peeled off after going to the end face 1b and the upper formation of end face 1b chamfered section of light-transmitting substrate 1.
As the coating method of anticorrosive additive material, can use the method that adopts the well-known devices such as spin coating machine.In addition, can also use the method that adopts so-called cover plate coating machine (Cap Coater), the coating anticorrosive additive material.In this cover plate coating machine, at first utilize capillarity, anticorrosive additive material is risen in the nozzle that openend makes progress.Then, make the anticorrosive additive material of the openend that arrives this nozzle, connect liquid with the coated face of down light-transmitting substrate 1.Then, these nozzles and light-transmitting substrate 1 are relatively moved, thereby form resist film 3 at coated of light-transmitting substrate 1.
In addition, in this operation, can make the formation zone of resist film 3, less than the formation zone of photomask 2.When the peripheral part of the first type surface 1a of light-transmitting substrate 1 forms the regional 2a of non-formation of photomask 2, perhaps as shown in Figure 2, when the whole first type surface 1a of light-transmitting substrate 1 forms photomask 2, also can make the formation zone of resist film 3, less than the formation zone of photomask 2.At this moment, can omit the operation that [3] hereinafter told about remove a part of resist film.
But on the viewpoints such as simplicity of the applying device of the membranous stability of resist film 3 and anticorrosive additive material, the formation zone of resist film 3 preferably comprises the formation zone of photomask 2, makes resist film 3 cover photomasks 2.
[3] remove the operation of a part of resist film
In above-mentioned operation, during resist film 3, in this operation, shown in (c) among Fig. 1, remove the peripheral part 3a of this resist film 3 when covering photomask 2 ground and forming, obtain to have removed the resist film 3A of peripheral part.In other words, remove the peripheral part 3a of resist film 3 after, make the peripheral part 2a of the photomask 2 that forms in the lower floor of the resist film 3A that has removed this peripheral part, expose to foreign side's side.
Removed the regional 3a of resist film 3, in the operation of telling about later, process etch processes etc. become the zone of removing photomask 2.Like this, just can remove as required the zone of photomask 2, determine to remove the regional 3a of resist film 3.
Method as the regulation zone 3a that removes resist film 3 can adopt following method.In other words, this removes method, and the solvent that makes anticorrosive additive material is with after the regulation of resist film 3 zone 3a contact, and the regional resist film 3 of regulation together, removes this solvent.For example can consider the following method of removing.At first, cover the first type surface of the regional 3a resist film 3 in addition of removing resist film 3 with coating member.Then, supply with the solvent of anticorrosive additive material on this coating member.Then, by the supply hole that arranges on the coating member, make the remove portion dissolving of resist film 3.In addition, as other the method for removing, can use the cloth of the solvent that comprises anticorrosive additive material, wipe the remove portion 3a of resist film 3.
The sectional view of Fig. 3 state that to be expression expose to the peripheral part of resist film.
In addition, in this operation, can use shadow mask 4 and light source 5 as shown in Figure 3, only regulation zone 3a optionally be exposed, and do not proceed to till the regulation zone 3a that removes resist film 3.In other words, from the light beam of light source 5, blocked by shadow mask 4, can not arrive the middle body of resist film 3.On the other hand, from the light beam of light source 5, by the outer circumferential side of shadow mask 4, arrive the outer peripheral portion of resist film 3, make resist film 3 sensitization of this part 3a.At this moment, in the later process of telling about later, or in the manufacturing process of the photomask of telling about later, the regional 3a that is exposed of resist film 3 just is developed, removes.
And then, as shown in Figure 4, do not use shadow mask 4, make the light beam from light source 5, inject from the back side 1c side of light-transmitting substrate 1, use photomask 2 as shadow mask, thereby can optionally expose by a peripheral part 3a to resist film 3.In other words, from the light beam of light source 5, blocked by shadow mask 4, can not arrive the middle body of resist film 3.On the other hand, from the light beam of light source 5, by the outer circumferential side of shadow mask 4, arrive the outer peripheral portion of resist film 3, make resist film 3 sensitization of this part 3a.At this moment, in the later process of also telling about later, or in the manufacturing process of the photomask of telling about later, the regional 3a that is exposed of resist film 3 just is developed, removes.
At this moment, in the peripheral part of the photomask 2 that light-transmitting substrate 1 forms, less than the part of the thickness that designs thickness, because shading is insufficient, so see through a part from the light beam of light source 5, make resist film 3 sensitization.Like this, the amount of emitted light of light source 5 should become the intensity of degree of resist film 3 sensitization of the peripheral part that is enough to make photomask 2.Different therewith, have in the zone of enough thickness at photomask 2, because from the light beam of light source 5 thoroughly but, so can not make resist film 3 sensitization.
In this operation, in the photomask blank that the peripheral part 3a of resist film 3 is exposed, the peripheral part 3a of this resist film 3 is developed, and then is removed.In addition, the resist film 3 in this photomask blank can also be as described later, in the developing procedure of the pattern in the manufacturing process of photomask, removes after developing simultaneously with peripheral part 3a.
In addition, for the selectable exposure of the remove portion 3a of the perimeter sides of resist film 3, can in the manufacturing process of photomask blank, not carry out, and carry out in the manufacturing process of described photomask later.Specifically, can carry out the selectable exposure for this resist film 3 when resist film 3 is carried out pattern plotter, perhaps can also carry out before the pattern plotter or after pattern plotter.But, as mentioned above, be preferably in the selectable exposure of carrying out in this operation for resist film 3.
Through after above-mentioned each operation, just produce the photomask blank that the present invention relates to.
[embodiment of the manufacture method of photomask]
Below, according to the order of each operation, tell about the manufacture method of the photomask that the present invention relates to.In addition, by the manufacture method of the photomask implementing the present invention relates to, can make the photomask blank that the present invention relates to.
The manufacture method of this photomask, the photomask blank that the present invention relates to that uses preamble to tell about carries out.But, when in the manufacturing process of this photomask, carrying out the selectable exposure for resist film 3, use the photomask blank of prior art to carry out with regard to becoming.Here, so-called " photomask blank of prior art " refers on light-transmitting substrate 1, forms photomask 2, covers this photomask 2, forms resist film 3, the product that this resist film 3 is not carried out any exposure.
[1] pattern plotter operation
The photomask blank that uses preamble to tell about toasts resist film 3A as required, then according to required pattern, carries out pattern plotter (optionally exposure) at resist film 3A.This pattern plotter for example can use laser to describe machine and carry out.
In addition, use to adopt electric wire describe machine the time, for the load that prevents light-transmitting substrate 1 increases, the peripheral part of light-transmitting substrate 1 is electric conductivity preferably.On the other hand, when using laser to describe machine, the peripheral part of light-transmitting substrate 1 then needs not to be electric conductivity.Like this, in the present invention, when the peripheral part of light-transmitting substrate 1 arranges the regional 2a of non-formation of photomask 2, be suitable for and use laser to describe machine.
In addition, in the manufacturing process of the photomask blank that preamble is told about, the remove portion of the perimeter sides of resist film 3 is not optionally exposed.At this moment, in this operation, with resist film 3 is carried out pattern plotter in, perhaps before the pattern plotter or after pattern plotter, resist film 3 is selectively exposed.Here, resist film 3 is selectively exposed, and the content of telling about in the manufacturing process of photomask blank is same.
[2] development and etch processes operation
The resist film 3A that has finished pattern plotter is developed, form the resist pattern.In addition, in the manufacturing process of the photomask blank that preamble is told about, only the peripheral part 3a of resist film 3 exposed, when not removing, in this operation, remove exposed portion.
The resist pattern that forms like this as mask, behind etch processes photomask 2, is formed the photomask pattern.Mode to etch processes is not particularly limited, and for example can use well-known wet etching process.At this moment because the peripheral part 2b of photomask 2 do not cover by resist film 3A, so this peripheral part 2b also etched processing remove.At this moment, the regional 2a of non-formation of photomask 2 for example arrives the width of the periphery of light-transmitting substrate 1, becomes 1mm～20mm.
After adopting this operation,, thickness irregular at the thickness that the perimeter sides of photomask 2 forms is removed less than the film 2b of the setting thickness of photomask 2.This thickness is irregular, thickness is less than the film 2b of the setting thickness of photomask 2, as previously mentioned, is to form when the spatter film forming of photomask 2.In this operation, the peripheral part 2b of the photomask 2 that is removed for example is 98% part less than the setting thickness of photomask 2.The setting thickness of photomask 2 as previously mentioned, for example is 80nm (800
)～150nm (1500
) the interior regulation thickness of scope.
Fig. 5 is the sectional view of the structure of the photo mask midbody that the present invention relates to of expression.
Like this, remove the peripheral part 2b of photomask 2 after, as shown in Figure 5, be formed in along the outer peripheral portion of the periphery of the first type surface 1a of light-transmitting substrate 1 and have the what is called " photo mask midbody " of the regional 2a of non-formation, the 3a of photomask 2A and resist film 3A.In this photo mask midbody, end face 2Aa, the 3Aa of the periphery of photomask 2A and resist film 3A, consistent in fact with direction perpendicular to the first type surface 1a of light-transmitting substrate 1.
[3] resist is removed operation
Then, adopt well-known method, removing becomes resist film 3A not.Like this, just finished on light-transmitting substrate 1, critically formed the photomask of the photomask 2A of Butut.This photomask in the part along the first type surface 1a periphery of light-transmitting substrate 1, has the regional 2a of non-formation of photomask 2A.In addition, the periphery of this photomask 2A namely faces the end face 2Aa of periphery of the photomask 2 of the regional 2a of non-formation, become and the peripheral part of this photomask 2A carried out the interface in the etched zone of etch processes, become the first type surface 1a from light-transmitting substrate 1, towards the direction vertical with this first type surface 1a, the shape that approximate vertical erects.
Fig. 6 is the sectional view of structure of the critical piece of the photomask that the present invention relates to of expression.
In other words, in this photomask, photomask 2A, as shown in Figure 6, near the end face 2Aa of the periphery that faces the regional 2a of non-formation, thickness becomes 98% zone less than the setting thickness of this photomask 2, becomes to the distance (width) of the boundary of this photomask 2A and the non-formation zone 2a zone less than 500 μ m.And then thickness is 98% zone less than the setting thickness of photomask 2A, and preferably width is the following zones of 100 μ m.Following zone is then better if width is 50 μ m.
[embodiment of the clone method of pattern]
In the clone method of this pattern, use the photomask of making as previously mentioned, the pattern that is replicated body is exposed.Be replicated body, such as be liquid crystal display with or the glass substrate used of plasma display panel (PDP) and color foil etc., to the not restriction of its purposes.
In addition, in the photomask that the present invention relates to, there is not the restriction of size.But, Yi Bian when for example being the above size of 300mm, particularly as being that 500mm is above, in the photomask of maximization, the effect of invention is especially remarkable on one side.
In other words, the photomask that uses in the manufacturing of the display device such as liquid crystal display and plasma display panel (PDP) is accompanied by the large tracts of land of display frame, exists the tendency of maximization.And because photomask more maximizes, just more thick heavier, the danger that produces particulate so result from peeling off of photomask just increases.It is the reasons are as follows.When the fitting operation photomask, need to use the anchor clamps of clamping its peripheral part, keep tightly., photomask is heavier, and the load that adds to contact site with anchor clamps outward and be outer peripheral portion also becomes greatly, and this part is held flaky cause.But the present invention can bring into play significant especially effect in the photomask that maximizes.
Embodiment:
Below, tell about embodiments of the invention.
At first, shown in Fig. 1 (a), by precise finiss on the first type surface 1a of the light-transmitting substrate 1 that consists of of the quartz glass of first type surface 1a, adopt sputtering method etc., the thickness that forms take chromium as principal ingredient is 100nm (1000
) photomask 2.At this moment, be the part of 3mm width to the periphery of the first type surface 1a of light-transmitting substrate 1, configuration mask when spatter film forming, thus cover chromium, as the regional 2a of non-formation.
Then, shown in Fig. 1 (b), use the cover plate coating machine, on the whole first type surface 1a of light-transmitting substrate 1, the resist film 3 of coating thickness 1.0 μ m, dry rear baking.Then, shown in Fig. 1 (c), take to the periphery of light-transmitting substrate 1 as the 6mm width, remove the peripheral part 3a of resist film 3.As the method for removing, can adopt the back side 1c side exposure from light-transmitting substrate 1 as shown in Figure 4, after developing, remove resist film 3 again.
Like this, just produce photomask blank.
Then, use and describe machine, to this photomask blank, describe the pattern of the device substrate manufacturing usefulness of LCDs.After describing, adopt well-known operation, develop and etch processes, 2A forms pattern at photomask.Then, as shown in Figure 5, remove resist film 3A not.
Like this, just produce photomask.
The photomask that visual check obtains, the periphery of photomask 2A are the boundary 2Aa of photomask 2A and non-formation zone 2a, become obvious boundary line.In addition, measure the shape of the periphery of photomask 2A with microscope and contact determining film thickness machine, near the periphery of photomask 2A, thickness---100nm (1000 in order to set for thickness
) the width of the part below 98%, be below the 50 μ m.In other words, the end face 2Aa of the periphery of photomask 2A becomes from the first type surface 1a of light-transmitting substrate 1 the shape that approximate vertical erects.
Then, clean.In matting, the quantity of the foreign matter that the inspection 3 μ m after use is cleaned are above finishes to clean this benchmark and carries out when becoming 0 (zero).But through once cleaning, just reached this benchmark.Then, form film.
On the other hand, as a comparative example, the peripheral part 2b of photomask 2 is intactly kept carrying out state behind the spatter film forming, make photomask.Be observed visually the part 2b of the thickness deficiency about the peripheral 1mm of this photomask.Use this photomask, form film.During foreign matter before film forms is confirmed, seen the particulate that near the impact the periphery of photomask 2 causes, formed operation in order to finish film, need to carry out 8 times and clean.
Claims (12)
1. photomask blank, for the pattern plotter that carries out based on required pattern, in described photomask blank, on the first type surface of light-transmitting substrate except along the part the peripheral part of described first type surface, form photomask by sputter, and form resist film at this photomask, it is characterized in that:
The zone that forms described photomask is greater than the zone that forms described resist film, and the peripheral part of described photomask exposes laterally from the periphery of described resist film.
2. photomask blank, for the pattern plotter that carries out based on required pattern, in described photomask blank, on the first type surface of light-transmitting substrate except along the part the peripheral part of described first type surface, form photomask by sputter, and form the resist film that covers described photomask at this photomask, it is characterized in that:
The zone of the peripheral part of the described photomask of covering of described resist film is exposed.
3. the manufacture method of a photomask blank, described photomask blank is for the pattern plotter that carries out based on required pattern, described method has: form the film formation process of photomask and at the working procedure of coating of described photomask coating resist film, it is characterized in that at the first type surface of light-transmitting substrate:
In described film formation process, will be along the outer peripheral portion of the periphery of the first type surface of the described light-transmitting substrate non-formation zone as described photomask;
In described working procedure of coating, by to the zone coating resist film that comprises the zone that is formed with described photomask, thereby utilize resist film to cover the periphery of described photomask;
Behind described working procedure of coating, have the resist film periphery and remove operation, this resist film periphery is removed operation by removing the peripheral part of coated resist film, thereby the periphery of described photomask is exposed.
4. the manufacture method of photomask blank as claimed in claim 3, it is characterized in that: described resist film periphery is removed operation, has:
From the exposure of the rear side of described light-transmitting substrate, thus with described photomask as photomask with the peripheral part sensitization that makes described resist film, and the operation that can be removed by the development in the later process; With
The later process of the peripheral part that utilizing develops removes resist film.
5. the manufacture method of photomask blank as claimed in claim 3, it is characterized in that: described resist film periphery is removed operation and is made of following operation,
To removing the regioselectivity ground exposure of resist film, make resist film sensitization, and the operation that can be removed by the development in the later process, and
The later process of the peripheral part that utilizing develops removes resist film.
6. the manufacture method of photomask blank as claimed in claim 3, it is characterized in that: described resist film periphery is removed operation, contacts with the peripheral part of described resist film by making solvent, thereby removes the peripheral part of this resist film.
7. the manufacture method of a photomask, use on the first type surface of light-transmitting substrate except forming photomask along the part the peripheral part of described first type surface by sputter and forming the photomask blank of resist film at described photomask, thereby carry out pattern plotter at described photomask and form predetermined pattern, it is characterized in that:
Have by the resist pattern that does not cover peripheral part with described photomask and carry out etching as mask, thereby remove the operation of the peripheral part of described photomask.
8. the manufacture method of a photomask, it is characterized in that, use photomask blank to form predetermined pattern at photomask, described photomask blank, on the first type surface of light-transmitting substrate except being formed with photomask along the part the peripheral part of described first type surface, and be formed with resist film at this photomask, form the peripheral part greater than the described photomask in the zone that forms described resist film in the zone of described photomask, expose laterally from the periphery of described resist film
The manufacture method of described photomask has:
Pattern to the described regulation of described resist film exposes, develops, and forms the operation of resist pattern; With
Described resist pattern as mask, is optionally removed described photomask, thereby form the pattern of described regulation at this photomask, and remove the operation of the peripheral part of the described photomask that exposes laterally from the periphery of described resist film.
9. the manufacture method of a photomask, it is characterized in that: use photomask blank to form predetermined pattern at photomask, described photomask blank, on the first type surface of light-transmitting substrate except being formed with photomask along the part the peripheral part of described first type surface, and be formed with resist film at this photomask, the zone of the peripheral part of the described photomask of covering of described resist film is exposed
The manufacture method of described photomask has:
Pattern to the described regulation of described resist film exposes, develops, and forms the operation of resist pattern; With
Described resist pattern as mask, by optionally removing described photomask, thereby is formed the pattern of described regulation at this photomask, and remove the operation of the peripheral part of the described photomask that exposes laterally from the periphery of described resist film.
10. the manufacture method of a photomask, it is characterized in that: use on the first type surface of light-transmitting substrate except being formed with photomask along the part the peripheral part of described first type surface and being formed with the photomask blank of resist film at this photomask, form predetermined pattern at described photomask
The manufacture method of described photomask has:
When the pattern to the described regulation of described resist film exposes, the operation of being exposed in the zone of the peripheral part of the described photomask that is equivalent to described resist film;
Described resist film is developed, form the operation of resist pattern; And
Described resist pattern as mask, is optionally removed described photomask, thereby form the pattern of described regulation at this photomask, and remove the operation of the peripheral part of the described photomask that exposes laterally from the periphery of described resist film.
11. the manufacture method such as each described photomask of claim 7～10 is characterized in that: the peripheral part of the described photomask that is removed comprises thickness is set the zone of thickness less than described photomask at least a portion.
12. the liquid crystal display clone method of pattern is characterized in that: the photomask that right to use requires the manufacture method of 7～10 each described photomasks to make is replicated on the body being formed on the pattern of the photomask of described photomask, copying to.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006-260826 | 2006-09-26 | ||
| JP2006260826 | 2006-09-26 | ||
| JP2006260826A JP5015537B2 (en) | 2006-09-26 | 2006-09-26 | Photomask manufacturing method and pattern transfer method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101154032A CN101154032A (en) | 2008-04-02 |
| CN101154032B true CN101154032B (en) | 2013-05-01 |
Family
ID=39255760
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101543876A Active CN101154032B (en) | 2006-09-26 | 2007-09-26 | Photo mask blank material, photo mask and manufacture method, photo mask midbody, pattern copy method of the same |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5015537B2 (en) |
| KR (2) | KR20080028305A (en) |
| CN (1) | CN101154032B (en) |
| TW (1) | TWI422960B (en) |
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|---|---|---|---|---|
| JP2012071258A (en) * | 2010-09-29 | 2012-04-12 | Casio Computer Co Ltd | Cleaning apparatus and cleaning method |
| JP6106579B2 (en) * | 2013-11-25 | 2017-04-05 | Hoya株式会社 | Photomask manufacturing method, photomask and pattern transfer method |
| JP6381961B2 (en) * | 2014-05-08 | 2018-08-29 | Hoya株式会社 | Manufacturing method of mask blank with resist film, manufacturing method of transfer mask, mask blank with resist film, manufacturing method of mask blank, and mask blank |
| JP7354032B2 (en) * | 2020-03-19 | 2023-10-02 | Hoya株式会社 | Mask blank, transfer mask, and semiconductor device manufacturing method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1577084A (en) * | 2003-06-30 | 2005-02-09 | Hoya株式会社 | Method for producing grey mask |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01217349A (en) * | 1988-02-25 | 1989-08-30 | Dainippon Printing Co Ltd | Blank plate, photomask using blank plate, and their manufacture |
| JPH02161433A (en) * | 1988-12-14 | 1990-06-21 | Fujitsu Ltd | Photomask substrate |
| JPH0440456A (en) * | 1990-06-06 | 1992-02-10 | Matsushita Electron Corp | Manufacture of photomask |
| JPH06250380A (en) * | 1993-02-26 | 1994-09-09 | Hoya Corp | Method for removing unnecessary film and its device, and production of phase shift mask blank |
| KR970009825B1 (en) * | 1993-12-31 | 1997-06-18 | 현대전자산업 주식회사 | Half-tone phase shift mast and fabrication method |
| JP2863131B2 (en) * | 1996-05-08 | 1999-03-03 | ホーヤ株式会社 | Method of manufacturing photomask blanks |
| JP2001230197A (en) * | 2000-02-17 | 2001-08-24 | Sigma Meltec Ltd | Method for removing edge film and method for electron beam lithography |
| JP3441711B2 (en) * | 2000-11-02 | 2003-09-02 | Ｈｏｙａ株式会社 | Halftone type phase shift mask and halftone type phase shift mask blank |
| JP2002343704A (en) * | 2001-05-17 | 2002-11-29 | Nec Corp | Method and system for forming coating film |
| KR100779956B1 (en) * | 2002-12-03 | 2007-11-28 | 호야 가부시키가이샤 | Photomask blank and manufacturing process of photomask |
| JP3939670B2 (en) * | 2003-03-26 | 2007-07-04 | シャープ株式会社 | Photomask pair for flare measurement, flare measurement mechanism, and flare measurement method |
| US7323276B2 (en) * | 2003-03-26 | 2008-01-29 | Hoya Corporation | Substrate for photomask, photomask blank and photomask |
| JP4587806B2 (en) * | 2004-12-27 | 2010-11-24 | Ｈｏｙａ株式会社 | Halftone phase shift mask blank and halftone phase shift mask |
-
2006
- 2006-09-26 JP JP2006260826A patent/JP5015537B2/en active Active
-
2007
- 2007-09-12 TW TW096134033A patent/TWI422960B/en active
- 2007-09-21 KR KR1020070096367A patent/KR20080028305A/en active Search and Examination
- 2007-09-26 CN CN2007101543876A patent/CN101154032B/en active Active
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2014
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1577084A (en) * | 2003-06-30 | 2005-02-09 | Hoya株式会社 | Method for producing grey mask |
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| Publication number | Publication date |
|---|---|
| KR20080028305A (en) | 2008-03-31 |
| TW200827926A (en) | 2008-07-01 |
| JP2008083194A (en) | 2008-04-10 |
| JP5015537B2 (en) | 2012-08-29 |
| CN101154032A (en) | 2008-04-02 |
| KR20140118942A (en) | 2014-10-08 |
| TWI422960B (en) | 2014-01-11 |
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| C56 | Change in the name or address of the patentee | ||
| CP02 | Change in the address of a patent holder |
Address after: Japan Tokyo 160-8347 Shinjuku Shinjuku six chome 10 No. 1 Patentee after: HOYA Corporation Address before: Tokyo, Japan, Japan Patentee before: HOYA Corporation |