CN101153387A - High-density plasma deposition reaction chamber and air injection ring for reaction chamber - Google Patents
High-density plasma deposition reaction chamber and air injection ring for reaction chamber Download PDFInfo
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- CN101153387A CN101153387A CNA200610116907XA CN200610116907A CN101153387A CN 101153387 A CN101153387 A CN 101153387A CN A200610116907X A CNA200610116907X A CN A200610116907XA CN 200610116907 A CN200610116907 A CN 200610116907A CN 101153387 A CN101153387 A CN 101153387A
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- shower nozzle
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- injection ring
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Abstract
The invention discloses a high intensity plasma deposition reaction chamber and a gas injection ring for the reaction chamber, wherein, the reaction chamber comprises a reaction chamber cover, a reaction chamber side wall, a static electricity chuck and a gas injection ring; the gas injection ring is provided with a plurality of spray heads which are connected with a gas source and are distributed around the circumference of the gas injection ring; moreover, each spray head comprises a first spray head and a second spray head; the axial line of the first spray head is parallel to the plane in which the circumference of the gas injection ring is positioned, while the axial line of the second spray head and the plane intersect and form a certain angle. The invention realizes evener distribution of the gas plasma inside the reaction chamber and improves the evenness and flatness of the formed film without changing process conditions and influencing gap filling quality.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of high-density plasma deposition reaction chamber and the air injection ring that is used for reaction chamber.
Background technology
Chip manufacture is the process of a plane processing, and this process is included in the step of the different retes of growth on the wafer.Develop rapidly along with semiconductor fabrication, the characteristic dimension of device is constantly dwindled, during semiconductor technology is made, the also normal method that increases the deposit film number of plies of utilizing, expand on the vertical direction of wafer, thin-film technique has become one of technology of the most critical in the semiconductor fabrication, and can the quality of its processing quality not only can have influence on down step process and normally carry out, also can have influence on the electrical property and the mechanical property of device, and then have influence on the yield rate and the output of device.Growth for Thin Film can realize by depositing operation, at present, thin film deposition processes commonly used in the semi-conductor manufacturing is chemical vapour deposition (CVD, ChemicalVapor Deposition) technology, this method is with in the gasiform chemical substance input reaction chamber, mixing reacts, and on wafer surface the deposition and film forming.CVD technology has multiple choices, and the difference of the film that can form as required requires to select its suitable CVD technology.
Wherein, for 0.25 micron following technology; generally adopt high-density plasma chemical vapor deposition (HDP-CVD; High Density Plasma Chemical Vapor Deposition) processing method is carried out the gap of high aspect ratio and is filled; it can obtain highdensity plasmoid in low pressure; have good porefilling capability and stable deposition quality; become the fill process of main flow; be usually used between each thin film layer, evenly filling to atresia dielectric so that abundant effective isolation protection to be provided; as form shallow-trench isolation (STI; Shallow Trench Isolation), metal front insulation layer (PMD), metal interlevel insulation layer (IMD) etc.
In the film growth, weigh a planeness that important indicator is a film of the film quality that forms, yet along with wafer size constantly enlarges, the difficulty that forms evenly smooth film in wafer surface increases constantly also.Especially fill the film formation technology that the gap requires for having, even adopted the HDP-CVD method, in order to realize good filling quality, avoid in the gap, producing pinch off (pinch-off) and cavity (Void), its processing condition applicatory are comparatively just carved usually, are difficult to obtain at the film that can both reach higher level aspect gap filling quality and the planeness two by the adjusting process condition.For improving this point, used reactant gases injects cvd reactive chamber when having adopted nozzle structure with deposit film in the existing HDP-CVD equipment, make the reaction gas physical efficiency be distributed in the reaction chamber more equably, to be implemented under the prerequisite that does not influence its filling quality, improve the uniformity coefficient and the planeness of thin film layer integral body.
Plasma body in the HDP-CVD processing method is that the form of under low pressure mixing gas with high-density directly touches silicon chip surface in the reaction chamber, and its equipment mainly includes reaction chamber, vacuum system, heating system, gas supply device and is used to excite mixed gas to form the RF source etc. of high density plasma.The schematic cross section that Fig. 1 excises for existing part with cvd reactive chamber of shower nozzle, as shown in Figure 1, reaction chamber mainly comprises reaction chamber cap (not shown), reaction chamber sidewall 101 (partly being excised shown in the figure), place the electrostatic chuck 110 of wafer 120, and, along the circumferential direction be installed on the air injection ring 102 of reaction chamber top side wall, and the nozzle arrangement 105 that a plurality of delivering gas are arranged on the air injection ring 102, the direction of each shower nozzle is all perpendicular to reaction chamber wall, be parallel to electrostatic chuck 110, just be parallel to the plane at the circumference place of air injection ring.During work, the vacuum system that links to each other with reaction chamber is evacuated to low vacuum state with reaction chamber, heating system is heated to working temperature to reaction chamber, gas required during deposition sprays in the reaction chamber by shower nozzle 105, simultaneously the wafer 120 that is positioned on the electrostatic chuck 110 is applied the RF bias voltage, realize depositing of thin film.But by the sedimentary film of this existing HDP-CVD equipment, because of its reactant gases is to be supplied by the side direction of reaction chamber, so the gas density of the centre portions of reaction chamber is higher, the planeness of the formed film of result is bad.Fig. 2 is the film morphology figure that utilizes existing HDP-CVD equipment growth, as shown in Figure 2, the film thickness of wafer central region 201 will be apparently higher than the film thickness of wafer edge region 202, causes the surface undulation injustice of wafer behind the growing film, influences normally carrying out of subsequent technique.
Application number is that 02131978.2 Chinese patent application discloses a kind of high density plasma CVD equipment, this equipment is abolished the air jet system on original sidewall, be inserted through sidewall and set up one by the outside, extend out to gas ejector pipe in the reaction chamber by the top center of reaction chamber, by this gas ejector pipe reactant gases is spread in the reaction chamber, to obtain more uniform high density plasma, improve the planeness of film.But the transformation of this kind equipment is comparatively complicated, needs the local more of change.In addition, the improved reaction chamber of this kind still can form higher gas density in the central position when work, and the planarization of the film of formation can not be significantly improved.
Summary of the invention
The invention provides a kind of high-density plasma deposition reaction chamber and the air injection ring that is used for reaction chamber, be optimized by nozzle arrangement the air injection ring of reaction chamber, make that the gaseous plasma distribution in the reaction chamber is more even, improved film forming homogeneity and planarization.
A kind of high-density plasma deposition reaction provided by the invention chamber, comprise reaction chamber cap, reaction chamber sidewall, electrostatic chuck and air injection ring, a plurality of shower nozzles are arranged on the described air injection ring, described shower nozzle links to each other with gas source and along the circle distribution of described air injection ring, wherein, described shower nozzle comprises first shower nozzle and second shower nozzle, and the axis of described first shower nozzle is parallel to the plane, circumference place of described air injection ring; The axis of described second shower nozzle becomes special angle with the circumference place Plane intersects of described air injection ring.
In the reaction chamber, described first shower nozzle and described second shower nozzle are installed at interval, and described first shower nozzle is adjacent with described second shower nozzle.
Wherein, the axis of described second shower nozzle becomes special angle between 10 ° to 80 ° with the circumference place Plane intersects of described air injection ring.
Wherein, the described gas source that described first shower nozzle and described second shower nozzle are connected to can be inequality, also can will link to each other with described second shower nozzle with described first shower nozzle respectively with a kind of described gas source, promptly part first shower nozzle is connected to identical gas source with second shower nozzle.
Described air injection ring in the reaction chamber can be positioned at reaction chamber top side wall or reaction chamber cap side-walls.
The present invention has the air injection ring that another kind identical or the relevant art feature is used for reaction chamber, a plurality of shower nozzles are arranged on the described air injection ring, described shower nozzle links to each other with gas source and along the circle distribution of described air injection ring, wherein, described shower nozzle comprises first shower nozzle and second shower nozzle, and the axis of described first shower nozzle is parallel to the plane, circumference place of described air injection ring; The axis of described second shower nozzle becomes special angle with the circumference place Plane intersects of described air injection ring.
Described first shower nozzle and described second shower nozzle on the air injection ring are installed at interval, and described first shower nozzle is adjacent with described second shower nozzle.
Wherein, plane, the circumference place angulation of the axis of described second shower nozzle and described air injection ring is between 10 ° to 80 °.
Wherein, the described gas source that is connected to of described first shower nozzle and described second shower nozzle can be different.
Compared with prior art, the present invention has the following advantages:
High-density plasma deposition reaction of the present invention chamber and the air injection ring that is used for reaction chamber, to optimizing by the nozzle arrangement that stretches out on the air injection ring, make the part nozzle arrangement be inclined upwardly, angled with the plane, circumference place of air injection ring, and remaining still keeps the parallel plane state in circumference place with air injection ring.The optimization of this shower nozzle can improve the homogeneity that the gaseous plasma in the reaction chamber distributes, need not to change processing condition, do not influence under the situation of gap filling quality, the homogeneity and the planarization of formed film have been improved, help normally carrying out of subsequent technique, improved the yield rate of product.
Description of drawings
Fig. 1 is the schematic cross section of the HDP-CVD reaction chamber of existing part excision with shower nozzle;
Fig. 2 is the film morphology figure that utilizes existing HDP-CVD equipment growth;
Fig. 3 is the schematic cross section of HDP-CVD reaction chamber with part excision of inclination shower nozzle;
Fig. 4 is for utilizing the film morphology figure of the HDP-CVD equipment growth with inclination shower nozzle;
Fig. 5 is the schematic cross section of the HDP-CVD reaction chamber of part excision of the present invention;
The serve as reasons film thickness situation comparison diagram of HDP-CVD reaction chamber growth of different nozzle structures of Fig. 6.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.
Treatment process of the present invention can be widely applied in many application; and can utilize many suitable materials to make; be to be illustrated below by preferred embodiment; certainly the present invention is not limited to this specific embodiment, and the known general replacement of one of ordinary skilled in the art is encompassed in protection scope of the present invention far and away.
Secondly, the present invention utilizes synoptic diagram to describe in detail, when the embodiment of the invention is described in detail in detail, for convenience of explanation, synoptic diagram can be disobeyed general ratio and be done local the amplification, should be with this as limitation of the invention, in addition, in the making of reality, should comprise the three-dimensional space size of length, width and the degree of depth.
Along with the develop rapidly of semiconductor fabrication, the characteristic dimension of device is constantly dwindled, and is all to have higher requirement at filling quality or aspect the planeness to thin film fabrication technology correspondingly.The thin film growth process condition that is suitable for when realizing good filling quality is comparatively just carved, and is difficult to merely obtain at the film that all reaches higher level aspect gap filling quality and the planeness two by the adjusting process condition.For this reason, have to set about, its reaction chamber is carried out new design improvement from the design details aspect of HDP-CVD equipment.
High-density plasma deposition reaction of the present invention chamber, comprise reaction chamber cap, reaction chamber sidewall, electrostatic chuck and air injection ring, a plurality of shower nozzles are arranged on the air injection ring, and this shower nozzle can be divided into first shower nozzle and second shower nozzle, the axis of first shower nozzle is parallel to the plane, circumference place of air injection ring, and the axis of second shower nozzle becomes special angle with the circumference place Plane intersects of air injection ring.Cvd reactive chamber of the present invention to distributing more uniformly of why can the realization response indoor gaseous plasma of the transformation of air injection ring upper nozzle, is relevant with the working order of high-density plasma deposition reaction chamber.
HDP-CVD equipment is that the form of utilizing plasma body under low pressure to mix gas with high-density directly touches the surperficial film forming of silicon chip in the reaction chamber.The lot of challenges of HDP-CVD is relevant with the design details of reaction chamber, and the improvement of its design details can improve the quality of chip manufacturing.The high-density plasma deposition reaction chamber generally includes reaction chamber cap, reaction chamber sidewall, electrostatic chuck and air injection ring, described air injection ring upper shed and the formation shower nozzle that stretches out.During deposition, the reactant gases that deposit film is required is sent in the reaction chamber by shower nozzle, simultaneously the wafer that is positioned on the electrostatic chuck is applied bias voltage, realizes depositing of thin film.This process is thought, nozzle structure in the reaction chamber is bigger to film forming uniformity coefficient influence, in the existing HDP-CVD reaction chamber, for reactant gases is evenly distributed, generally adopt parallel nozzle structure, reactant gases is sprayed in the reaction chamber, but the shower nozzle of in fact this parallel construction can cause the density maximum of reactant gases above the wafer middle part, the result causes thick, the thin edge in formed film middle part, unfairness, uneven phenomenon occur, influenced normally carrying out of subsequent technique.For improving this point, hope can reduce the reactant gases density at reaction chamber middle part., the nozzle structure in the reaction chamber is inclined upwardly, the air-flow that changes in the reaction chamber distributes for this reason.
Fig. 3 is the schematic cross section of HDP-CVD reaction chamber with part excision of inclination shower nozzle, as shown in Figure 3, be positioned at a plurality of openings on the vertical air injection ring 102 of sidewall, draw a plurality of nozzle structures 301 respectively, this nozzle structure is inclined upwardly, its axis runout with reaction chamber in the plane, circumference place of air injection ring.Like this, when spraying into reactant gases, the air-flow in the reaction chamber distributes and will change, and the final film thickness that forms distributes and also can be different from the formed film of the reaction chamber that utilizes parallel nozzle structure.Fig. 4 is for utilizing the film morphology figure of the HDP-CVD equipment growth with inclination shower nozzle, as shown in Figure 4, the film thickness of wafer central region 401 will be starkly lower than the film thickness of wafer edge region 402, still do not reach the purpose of flat film, but the unfairness trend of noticing its appearance is just in time opposite with parallel shower nozzle, the present invention utilizes this point exactly, direction to each shower nozzle in the reaction chamber is optimized, it is parallel that its direction is had plenty of, has plenty of inclination, this shower nozzle direction inconsistent can change the pattern of film, improves the planeness of film.
High-density plasma deposition reaction of the present invention chamber, by the shower nozzle direction on the air injection ring in the reaction chamber is optimized, adjusted the distribution of the reactant gases in the reaction chamber, under the situation that does not influence the film filling quality, can form that fluctuations is little, planeness and the higher thin film layer of uniformity coefficient.
In the embodiments of the invention, the HDP-CVD equipment growing silicon oxide film that utilization has improved is filled the sti trench groove, the characteristics of high density plasma deposition are that it can be implemented in the inter-sync of high density plasma reaction chamber and deposit process with the etching dielectric, realize that its gas used in reaction is respectively silane (SiH at a lower temperature to the good filling in high aspect ratio gap
4), oxygen (O
2), hydrogen (H
2), argon gas (Ar) and helium (He).Wherein, depositing operation mainly is by SiH
4And O
2Reaction realize that and etching technics mainly is by Ar and O
2Sputter finish.In addition,,, often need adding helium and hydrogen that technology is adjusted, reach better process results for the following technology of 90nm for further improving the filling quality of STI.Yet, the STI that utilizes existing HDP-CVD reaction chamber to carry out fills, be difficult to satisfy simultaneously the requirement of filling quality and planarization two aspects, usually planarization is relatively poor, even through follow-up cmp (CMP, Chemical Mechanical Polishing) technology, the roughness of wafer surface are still greater than 400 , and this is difficult to accept for the following technology of 90nm.
Fig. 5 is the schematic cross section of the HDP-CVD reaction chamber of part excision of the present invention, and present embodiment is exactly to utilize the HDP-CVD reaction chamber of the present invention of having optimized nozzle structure that sti structure is filled.As shown in Figure 5, the shower nozzle branch that is stretched out by air injection ring in the reaction chamber is for two groups, one group is circumference place planar first shower nozzle 501 that axis is parallel to air injection ring, and another group is second shower nozzle 502 that the axis and the circumference place Plane intersects of air injection ring become special angle.Wherein, the number of first shower nozzle can be between 3 to 30, as 6,10,18 etc.; The number of second shower nozzle also can be between 3 to 30, as 6,10,18 etc.In the present embodiment, first shower nozzle and second shower nozzle are to install at interval, and each first shower nozzle is all adjacent with second shower nozzle, and the total amount of the two is identical.In other embodiments of the invention, can also install two kinds of shower nozzles with different intervals,, or between every two or more second shower nozzles one first shower nozzle is installed as installation one second shower nozzle between every two or more first shower nozzles, at this moment, first shower nozzle is different with the total amount of second shower nozzle.
In addition, the angle of inclination of second shower nozzle, promptly plane, the circumference place angulation of the axis of second shower nozzle and air injection ring can be between 10 ° to 80 °, as be 15 °, 30 °, 45 °, 60 ° or 75 ° etc., the angle of inclination of each second shower nozzle is all identical in the present embodiment, in other embodiments of the invention, each second shower nozzle can also be tilted by different angles, as each second shower nozzle is settled in turn by 15 ° and 45 °, with the homogeneity of further raising air-flow distribution, and then the planeness of raising film.
In the present embodiment, used gas is respectively SiH when filling STI
4, O
2, H
2, Ar and He, these gases are connected to different shower nozzles respectively, send in the reaction chamber.In the present embodiment, with SiH
4Send into reaction chamber with Ar by second shower nozzle, with O
2, H
2Send in the reaction chamber by first shower nozzle with He, make quality SiH heavier, that diffustivity is relatively poor
4With Ar gas flow route a trend of advancing to edge is arranged, to improve the homogeneity of gas flow in the reaction chamber.In other embodiments of the invention, according to the characteristic of reactant gases, also each gas all can be sent in the reaction chamber by the first and second different shower nozzles respectively, as SiH
4Gas can be sent in the reaction chamber by first shower nozzle and second shower nozzle simultaneously, and the distribution of all gases in reaction chamber all changed, and finally obtains more uniform airflow distribution.
The serve as reasons film thickness situation comparison diagram of HDP-CVD reaction chamber growth of different nozzle structures of Fig. 6, the 601 silicon oxide film thickness distribution situations that are depicted as HDP-CVD reaction chamber growth among the figure with traditional parallel shower nozzle, can see, the silicon oxide film that it is grown, the thickness in centre obviously will be higher than the edge of wafer.The 602 silicon oxide film thickness distribution situations that are depicted as the HDP-CVD reaction chamber growth with acclivitous shower nozzle can see that the silicon oxide film that it is grown, the thickness in centre obviously will be lower than the edge of wafer among the figure.Two kinds of uniformity of films that reaction chamber grew, planeness are relatively poor.The silicon oxide film thickness distribution situation that the 603 HDP-CVD reaction chambers with two kinds of nozzle structures that are depicted as present embodiment are grown among the figure, can see, the silicon oxide film that it is grown, in the entire wafer scope, be in the centre or the thickness of the edge film of growing all is more or less the same, do not changing processing condition, do not influence under the situation of filling quality of groove, obviously improved the homogeneity and the planeness of the silicon oxide film of being grown, very favourable to the carrying out of subsequent technique.
In the present embodiment, not only kept filling quality by the silicon oxide film of the HDP-CVD reaction chamber of two kinds of nozzle structures growth to the sti trench groove, the planeness and the homogeneity of the film of being grown have also been improved greatly, after filling the sti trench groove and carrying out the CMP grinding, the roughness of wafer surface can be brought down below 200 , this is particularly crucial for the following technology of 90nm.
In the present embodiment, it is identical that circumference place planar first shower nozzle that axis is parallel to air injection ring becomes the length of second shower nozzle of special angle with axis with the circumference place Plane intersects of air injection ring, in other embodiments of the invention, can also adjust the length of first shower nozzle and second shower nozzle, as make the first shower nozzle length be longer than or be shorter than second shower nozzle, or each shower nozzle in first shower nozzle and second shower nozzle is set to different length by its position is different, can further adjust the homogeneity of reaction indoor air flow like this, it is more flexible to make air-flow adjust scheme.
In the present embodiment, the air injection ring that extends shower nozzle is to be positioned at the reaction chamber top side wall, and in other embodiments of the invention, this air injection ring can also be positioned at the side-walls of reaction chamber cap.
Above-described is that air injection ring is a situation about being applied in a kind of HDP-CVD reaction chamber, air injection ring of the present invention can also be applied in other various reaction chambers, as long as being the air-flow distribution situation that is used to improve in the reaction chamber, it just should belong within the institute of the present invention restricted portion, as other sediment chambers or etching reaction chamber etc.
A plurality of shower nozzles are arranged on the air injection ring among the present invention, and it links to each other with gas source and along the circle distribution of air injection ring, described shower nozzle comprises first shower nozzle and second shower nozzle, and the axis of first shower nozzle is parallel to the plane, circumference place of air injection ring; The axis of second shower nozzle becomes special angle with the circumference place Plane intersects of air injection ring, and this angle can be between 10 ° to 80 °.
Wherein, first shower nozzle and second shower nozzle can be installed according to certain rules at interval, shower nozzle length can be set to identical or different on demand, and the gas source that is connected also can be connected to identical gas source or different gas sources by the difference of concrete processing requirement, this selection can obtain by simple derivation or experiment for the common technique personnel of this area, does not repeat them here.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (12)
1. high-density plasma deposition reaction chamber, comprise reaction chamber cap, reaction chamber sidewall, electrostatic chuck and air injection ring, a plurality of shower nozzles are arranged on the described air injection ring, described shower nozzle links to each other with gas source and along the circle distribution of described air injection ring, it is characterized in that: described shower nozzle comprises first shower nozzle and second shower nozzle, and the axis of described first shower nozzle is parallel to the plane, circumference place of described air injection ring; The axis of described second shower nozzle becomes special angle with the circumference place Plane intersects of described air injection ring.
2. reaction chamber as claimed in claim 1 is characterized in that: described first shower nozzle and described second shower nozzle are installed at interval, and described first shower nozzle is adjacent with described second shower nozzle.
3. reaction chamber as claimed in claim 1 is characterized in that: described special angle is between 10 ° to 80 °.
4. reaction chamber as claimed in claim 1 is characterized in that: described first shower nozzle is different with the described gas source that described second shower nozzle is connected to.
5. reaction chamber as claimed in claim 1 is characterized in that: link to each other with described second shower nozzle with described first shower nozzle respectively with a kind of described gas source.
6. reaction chamber as claimed in claim 1 is characterized in that: described first shower nozzle is set to identical or inequality with the length of described second shower nozzle.
7. reaction chamber as claimed in claim 1 is characterized in that: described air injection ring is positioned at reaction chamber top side wall or reaction chamber cap side-walls.
8. air injection ring that is used for the described reaction chamber of claim 1, a plurality of shower nozzles are arranged on the described air injection ring, described shower nozzle links to each other with gas source and along the circle distribution of described air injection ring, it is characterized in that: described shower nozzle comprises first shower nozzle and second shower nozzle, and the axis of described first shower nozzle is parallel to the plane, circumference place of described air injection ring; The axis of described second shower nozzle becomes special angle with the circumference place Plane intersects of described air injection ring.
9. air injection ring as claimed in claim 8 is characterized in that: described first shower nozzle and described second shower nozzle are installed at interval, and described first shower nozzle is adjacent with described second shower nozzle.
10. air injection ring as claimed in claim 8 is characterized in that: plane, the circumference place angulation of the axis of described second shower nozzle and described air injection ring is between 10 ° to 80 °.
11. air injection ring as claimed in claim 8 is characterized in that: described first shower nozzle is different with the described gas source that described second shower nozzle is connected to.
12. air injection ring as claimed in claim 8 is characterized in that: described first shower nozzle is set to identical or inequality with the length of described second shower nozzle.
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| CNA200610116907XA CN101153387A (en) | 2006-09-30 | 2006-09-30 | High-density plasma deposition reaction chamber and air injection ring for reaction chamber |
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|---|---|---|---|
| CNA200610116907XA CN101153387A (en) | 2006-09-30 | 2006-09-30 | High-density plasma deposition reaction chamber and air injection ring for reaction chamber |
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| CN101153387A true CN101153387A (en) | 2008-04-02 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101465276B (en) * | 2007-12-19 | 2012-07-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Air-intake device and semiconductor processing equipment applying the same |
| WO2013143241A1 (en) * | 2012-03-30 | 2013-10-03 | 理想能源设备(上海)有限公司 | Chemical vapour deposition method for organic metal compound and apparatus therefor |
| CN103871853A (en) * | 2014-03-24 | 2014-06-18 | 上海华力微电子有限公司 | Device and method for improving uniformity of thin film |
| CN105289946A (en) * | 2015-11-25 | 2016-02-03 | 南京理工大学 | Method and equipment for preparing compact thin film by electrostatic spraying method |
| CN109075056A (en) * | 2016-04-05 | 2018-12-21 | 硅电子股份公司 | The gaseous corrosion method of semiconductor wafer for trace metal analysis |
| CN109285887A (en) * | 2017-07-20 | 2019-01-29 | 长鑫存储技术有限公司 | Nozzle assembly, the precipitation equipment and method for improving layer thickness uniformity |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101465276B (en) * | 2007-12-19 | 2012-07-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Air-intake device and semiconductor processing equipment applying the same |
| WO2013143241A1 (en) * | 2012-03-30 | 2013-10-03 | 理想能源设备(上海)有限公司 | Chemical vapour deposition method for organic metal compound and apparatus therefor |
| CN103361624A (en) * | 2012-03-30 | 2013-10-23 | 理想能源设备(上海)有限公司 | Metallo-organic compound chemical vapor deposition method and device |
| CN103361624B (en) * | 2012-03-30 | 2015-07-01 | 理想能源设备(上海)有限公司 | Metallo-organic compound chemical vapor deposition method and device |
| CN103871853A (en) * | 2014-03-24 | 2014-06-18 | 上海华力微电子有限公司 | Device and method for improving uniformity of thin film |
| CN105289946A (en) * | 2015-11-25 | 2016-02-03 | 南京理工大学 | Method and equipment for preparing compact thin film by electrostatic spraying method |
| CN109075056A (en) * | 2016-04-05 | 2018-12-21 | 硅电子股份公司 | The gaseous corrosion method of semiconductor wafer for trace metal analysis |
| CN109285887A (en) * | 2017-07-20 | 2019-01-29 | 长鑫存储技术有限公司 | Nozzle assembly, the precipitation equipment and method for improving layer thickness uniformity |
| CN109285887B (en) * | 2017-07-20 | 2021-07-30 | 长鑫存储技术有限公司 | Nozzle assembly, deposition device and method for improving thickness uniformity of material layer |
| CN115110064A (en) * | 2022-07-15 | 2022-09-27 | 长鑫存储技术有限公司 | Gas input equipment and gas input method |
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