CN101082523A - Method for making flexibility temperature sensor - Google Patents
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Abstract
This invention discloses a production method of flexibility humidity sensor. Its character is washing a dimethyl siloxane interlayer on silicon dice carrier firstly, after solidification in room-temperature, activing the surface with oxygen plasma, then washing high viscosity polyimide again and procuring with staged technology, then, overlapping and depositing all the metal coating and using stripping technology and wet-method corroding figure technology to firm mental humidity-dependent resistor and electric connector, after this, overlapping a light low viscosity PI protective layer, using wet method to corrode the outside metal press welding part; then putting the device on the heating plate and peeling the interlayer from the flexible carrier, after all, putting the flexible carrier peeled into the bake oven to solidify it to two PI membranous layers completely, so realizing the compatible craft. The method to make it is simple, the cost is low and the rate of finished products is high, and it is more near the achievement of mass production and the integration of the high density sensor.
Description
Technical field
The present invention relates to a kind of method for making of flexible MEMS temperature sensor, belong to MEMS (micro electro mechanical system) (MEMS) field of making.
Background technology
Continuous development along with micro-processing technology, the silica-based MEMS sensor of tradition is because substrate is harder, be not enough to satisfy such as wearing the growing application demand that electron device, foldable electronic, robot sensing system and intelligent skin etc. require the flexible structure device, the technology of therefore making the MEMS device on flexible substrate more and more causes scholars' concern.The excellent comprehensive performance is chosen as desirable flexible substrate material owing to polyimide (PI) has uniqueness.Its electric heating isolation performance is good, and physical strength height, resist chemical performance are strong, and high-temperature stability is good.Recently be on the increase about make flexible MEMS sensor reports such as temperature, fluid, position, pressure on the PI substrate, the key property of performance device of corresponding silica-based MEMS sensor with it of most of MEMS sensor of having developed is suitable.Wherein on the PI substrate, make be the flexibility temperature sensor of thermo-sensitive resistor and array thereof with the metallic film and to compare advantage more outstanding for silica-based temperature sensor, and its application is very extensive, as having good hot isolation performance owing to PI itself, so do not need to make hot isolated chambers, make that the structure of device is frivolous, manufacture craft is simple, and cost reduces, yield rate raises, and is expected to realize producing in batches.And the physical strength height of device, pliability is good, and the body surface that can be attached to arbitrary shape is realized the instant detection of temperature.
Employing PI is that the method for flexible substrate making temperature sensor mainly contains two kinds.First method is that the in type solid-state PI diaphragm of employing is a substrate, with cementing agent it temporarily is attached on the carrier silicon chip, depositing metal films is made thermo-sensitive resistor and electrical connection thereof on the PI substrate then, at last the flexible device of making is stripped down from carrier.People such as J.S.Han have produced the flexible array of temperature sensor (J.S.Han that is used for fingerprint recognition, Z.Y. Tan, K.Sato and M.Shikida.Thermalcharacterization of microheater arrays on a polyimide film substrate for fingerprint sensing applications.J.Micromech.Microeng.15 (2005) 282～289).Second method then is to utilize the overlapping coating of liquid PI performed polymer to form certain thickness PI flexible substrate.This method is deposition one deck sacrifice layer (as PSG or Al) on the processing carrier silicon chip at first, then liquid PI performed polymer of overlapping in the above coating and full solidification form the PI flexible substrate, depositing metal films and graphical formation metal thermo-sensitive resistor and electrical connection thereof on the PI flexible substrate then will be removed sacrifice layer at last flexible device will be discharged from the carrier silicon chip.People such as G.B.Lee also adopt Al to do sacrifice layer and produce 40 * 1 flexible array of temperature sensor on the PI substrates.(G.B.Lee, F.C.Huang, C.Y.Lee.J.M.A new fabrication process for a flexible skin with temperature sensorarray and its applications.Acta.Mechanica Sinica.20 (2) (2004): 140～145), also adopt PSG to do sacrifice layer before us and successfully produce 8 * 8 making flexibility temperature sensors.(Suyan?Xiao，Lufeng?Che，Xinxin?Li，Yuelin?Wang.A?cost-effective?flexible?MEMS?techniquefor?temperature?sensing.Microelectronics?Journal，accepted)。In above-mentioned these two kinds of method for makings, first kind of method for making is simpler relatively, can adopt the processing instrument and equipment of silica-based MEMS to finish the making of device.But unavoidably there are the following problems to adopt attaching PI embrane method: at first do not have bubble between PI of Tie Fuing and the carrier silicon chip unavoidably, secondly in the thermal cycle process, under the effect of thermal stress, plastic yield easily takes place in PI, so under the necessary hot conditions of subsequent technique, the PI film that is attached on the carrier silicon chip easily is shifted, and this brings very big difficulty for the aligning photoetching, thereby has reduced device yield.Second method has been avoided the existing problem of first method to a great extent, applies the influence that the PI substrate has obviously reduced thermal cycle, and the PI flexible substrate that applies in process can keep smooth and can not be subjected to displacement.Liquid PI performed polymer coat fully solidifies the back and has similar substantially performance to the solid-state PI film of moulding, therefore liquid PI performed polymer is a kind of very desirable flexible material, yet in second kind of method for making the PI flexible device is got off to remain a very big challenge from the release on the processing carrier silicon chip.Large tracts of land sacrifice layer between carrier silicon chip and the PI flexible substrate is discharged fully not only time-consuming, and for a long time device is immersed in discharge in the liquid and will influences the integrality of flexible device performance and structure thereof to some extent.In sum, although at present, liquid PI performed polymer is a kind of desirable flexible substrate material, but how easily flexible array of temperature sensor is separated and can also guarantee the integrality of device from the processing carrier silicon chip, and this is the problem that must consider.This also is the main purpose of the present invention.In fact, this also is that other MEMS device that is flexible substrate with liquid PI performed polymer separates the difficulty that is run into from processing carrier, such as AliYildiz similar problem (AliYildiz when being used for the hot instrument of flexible microbolometer of infrared acquisition, has been proposed also in making, Zeynep Celik-Butler, Donald P.Butler.Microbolometers on aFlexible Substrate for Infrared Detection.IEEE Sensors Journal.4 (1) 2004:112～117).Clearly the separation method with the liquid PI performed polymer device that is flexible substrate also needs to optimize its isolation technics according to the architectural feature and the manufacture craft thereof of flexible device.
Summary of the invention
In order to remedy the deficiency of common rigidity MEMS temperature sensor, the object of the present invention is to provide a kind of manufacture method of the temperature sensor based on flexible substrate.Method provided by the present invention has been particularly related to a kind of with the method that separate of flexibility temperature sensor from the processing carrier silicon chip, be between processing carrier silicon chip PI flexible substrate, to apply one deck PDMS intermediate course, because the adhesion property between PI and the PDMS is poor, helps the separation of flexible device under the thermal stress effect.
The method for making of a kind of flexible MEMS temperature sensor provided by the invention; be that single to throw silicon chip be processing carrier with common; on silicon chip, apply the PDMS intermediate course of the about 40-50 μ of one deck m earlier; help the separation of last flexible device; and PDMS intermediate course surface carried out activation processing; and then the liquid PI performed polymer of overlapping coating on the PDMS intermediate course; thereby form the PI film of 35-45mm thickness; depositing metal films and form thermo-sensitive resistor and electrical connection thereof simultaneously on the PI film again by peeling off with photolithography patterning; apply skim PI flexible insulation protective seam then topmost; and the press welding block zone that is electrically connected is exposed by wet method pattern; after this device of carrier silicon chip and made is positioned on 100 ℃ the hot plate; by tip tweezers and thin blade PI is peeled from the PDMS intermediate course on the carrier silicon chip, at last flexible device is put into baking oven two structural sheet PI films are fully solidified.The step that flexibility temperature sensor method for making of the present invention is concrete is as follows:
(1) prepares the processing carrier silicon chip: with common single carrier of throwing silicon chip as whole flexibility temperature sensor processing;
(2) preparation of PDMS intermediate course: is that 6: 1～10: 1 ratio is mixed with PDMS performed polymer and hardening agent with mass ratio, slowly stirs and vacuumizes and handle 15min to remove the bubble in the mixed liquor.For obtaining evenly smooth PDMS intermediate course, adopt three method for changing speed to apply PDMS, concrete painting method is: the PDMS performed polymer of capacity is dripped at carrier silicon chip center, initial speed is that 150rpm keeps 30s, cover on the whole silicon wafer up to coated article, the 900rpm that slowly raises speed again, and keep 40s, the 4500rpm that slowly raises speed then also at room temperature solidifies 48h, obtains the PDMS intermediate course of about 50 μ m.Because the PDMS surface after solidifying presents hydrophobic property, thereby adopt oxygen plasma technique to activate the PDMS surface, the free radical that produces in the reactivation process contacts with oxygen, contain the oxygen functional group at PDMS top layer generation superoxide and other, and do not change the original character of PDMS, make the water wettability on corresponding PDMS surface increase, thereby improved the PDMS surface and be deposited adhesion property between the material.The surface activation process condition is: 100% oxygen, and power 75W, pressure is 10mTorr, time 30s;
(3) preparation of PI flexible substrate: the liquid high viscosity PI of the PDMS intermediate course surface-coated after activation processing performed polymer, in order to reach certain thickness, adopt the method for continuous four overlapping coatings.The speed of primary spin coating is 2000rpm, and the spin coating time is 50s, applies back 80 ℃ of preliminary drying 5min on hot plate.The preceding rotating speed of the rotating ratio of each overlapping coating improves 200rpm, preliminary drying temperature after each overlapping coating improves 5 ℃ than a preceding temperature, because film is thicker, adopt hot plate to realize the heat treatment method of " from outward appearance to inner essence ", make the solvent in the PI performed polymer fully in time evaporate and avoid defectives such as surface generation bubble.After last the coating, PI performed polymer coat is slowly risen to 200 ℃ from 95 ℃ on hot plate, and insulation 15min, and then slowly be cooled to room temperature, to reduce the influence of thermal cycle as far as possible;
(4) metallic film is peeled off and the photoresist mask layer patternsization: apply positive photoresist, and with photoresist on hot plate 90 ℃, preliminary drying 3min aims at exposure and also develops and expose the window of pre-deposition metal level; Oxygen plasma activation PI surface then makes the PI surface that certain roughness be arranged and has active chemical bond and improve the performance of sticking with the pre-deposition metal level, and PI surface active condition is: 150W, 100%O
2, time 3min;
(5) metal thermo-sensitive resistor and be electrically connected deposition and graphical: all metallic films comprise the continuous overlapping sputter formation of adhesion layer TiW (200 ), Pt film (1200 ) and Au (3000 ) and need not interrupt the vacuum of sputtering chamber; And acetone peels off mask layer and top metal level thereof, and the needed metal thermo-sensitive resistor that closely contacts with the PI substrate and the TiW/Pt metal level zone of electrical connection thereof remain; Use liquor kalii iodide (weight ratio KI: I then
2: H
2O=4: 1: 40) the Au film of non-electric-connecting subregion is fallen in selective etching, exposes the TiW/Pt metal level below it, realizes thermo-sensitive resistor TiW/Pt so simultaneously and is electrically connected the graphical of TiW/Pt/Au;
(6) coating of the PI of the superiors insulating protective layer and graphical: in order to protect thermo-sensitive resistor and electrical wiring thereof, at the thick low viscosity PI performed polymer of the superiors' spin coating 2 μ m, and on hot plate 80 ℃, 105 ℃, 140 ℃ preliminary drying 5min, 4min, 4min respectively; Then apply about 1.3 μ m photoresist mask layers and preliminary drying 90s on 100 ℃ of hot plates; Aim at exposure, its time shutter increases to 2.5 times of normal exposure time, corrodes the performed polymer of PI until the press welding block that exposes electrical connection with developer for positive photoresist then;
(7) separation of flexibility temperature sensor: carrier silicon chip and top device thereof be positioned on 100 ℃ the hot plate, PI peeled from the PDMS intermediate course on the carrier silicon chip with tip tweezers and thin blade;
The secondary heat curing of (8) two PI structural membranes: the flexible device after will discharging is positioned in the baking oven of nitrogen protection, and baking oven is warmed up to 275 ℃ gradually from room temperature, slowly drops to room temperature then, makes PI performed polymer full solidification.
In sum, the making of flexibility temperature sensor of the present invention only needs three mask, manufacture craft is simple, with low cost, the yield rate height, the method is fit to equally form the manufacturing of array by numerous this flexibility temperature sensors unit, and is expected to realize to produce in batches and high density sensor integrated; The method that the introduction of PDMS intermediate course helps the separation of flexible device among special the present invention has the certain significance to the research of some other PI flexible MEMS technology such as flexible analogue probe.
Flexibility temperature sensor of the present invention and preparation method thereof mainly contains following characteristics:
(1) adopt flexible MEMS skin fabrication techniques temperature sensor of the present invention and common rigidity (as silicon and glass etc.) MEMS temperature sensor to compare following advantage: owing to PI itself has good hot isolation performance, so do not need to make adiabatic heat insulation cavity, the manufacture craft that provides is simple, with low cost, structure is frivolous thereby make, the physical strength height, thermal response is fast, pliability good, and can be attached to the distribution of the instant detecting temperature of the body surface field of random geometry;
(2) flexible substrate is by being coated on the processing carrier silicon chip and forming the flexible PI substrate of suitable thickness so that liquid high viscosity PI performed polymer being overlapping, compare with the method that existing solid-state PI diaphragm is attached on the silicon chip, this method has obviously reduced the plastic yield that is caused by thermal cycle, thereby improves the yield rate of device;
(3) the continuous overlapping deposition of the metallic film of thermo-sensitive resistor and electrical connection thereof and needn't interrupt vacuum tightness in the sputter cavity, this makes the performance of sticking of metal and PI obtain very big improvement, also helps the raising of device yield;
(4) because the thermal expansivity of PI and PDMS differs bigger, the adhesion property of the two is relatively poor under the thermal stress effect, so apply the separation that one deck PDMS intermediate course helps flexible device between the PI substrate of processing carrier silicon chip and the formation of liquid PI performed polymer, this has certain effect to the flexible Study on Technology of some PI;
(5) because PDMS can not high temperature resistant (＞250 ℃), and the full solidification of PI need at high temperature be finished, before adopting flexible device to separate and separate the curing that latter two stage finishes PI, make up, realized two organism PDMS and PI and MEMS process compatible by process optimization.
Description of drawings
Fig. 1 is the general flow chart of manufacture method of the present invention
Coating, curing and the surface activation process of Fig. 1 (a) PDMS intermediate course;
The coating and the precuring of Fig. 1 (b) PI performed polymer form flexible substrate;
Fig. 1 (c) stripping technology, photoresist is graphical, forms the layer metal deposition window;
Sputter and the stripping technology of Fig. 1 (d) metal level TiW/Pt/Au;
Fig. 1 (e) aims at photolithography patterning and generates TiW/Pt thermo-sensitive resistor and TiW/Pt/Au electrical connection;
Fig. 1 (f) applies PI performed polymer insulation protection thin layer once more, adopts wet etching to expose the press welding block part of electrical connection.
The release of Fig. 1 (g) flexible device and the regelate of PI
1-Si 2-PDMS
3-PI layer 4-photoresist
5-TiW/Pt 6-Au
The sticking outward lead of 7-
The flexible MEMS temperature sensor cellular construction synoptic diagram that Fig. 2 makes for the present invention
(a) cross sectional plan view
(b) cross-sectional view
The 3-PI layer
5-TiW/Pt
6-Au
Fig. 3 is the arrangement mode figure of 8 * 8 flexible array of temperature sensor
Fig. 4 is that the resistance variations of 5 temperature sensitive unit in 8 * 8 flexible array of temperature sensor concerns with variation of temperature, i.e. the temperature-coefficient of electrical resistance family curve of thermo-sensitive resistor.
Embodiment
Following mask body is introduced a kind of embodiment, further specifies the manufacturing that method of the present invention is fit to equally the sensor array be made up of numerous this flexibility temperature sensors unit.
Referring to Fig. 3 is that 64 responsive to temperature unit are arranged into 8 * 8 array architectures: the area size of whole array is 2500 * 5500 μ m
2, sensing unit is snakelike shape in the array, and unit size line length * live width * line is thick to be 644 μ m * 4 μ m * 0.12 μ m, and the area size is 68 * 68 μ m
2
Method for making manufacturing according to flexible MEMS temperature sensor of the present invention.Throwing silicon chip with common list in the device fabrication process is that carrier provides smooth machined surface; the PDMS intermediate course that at first applies one deck 50 μ m on machining carrier silicon chip helps the separation of flexible device; then the liquid PI performed polymer of four overlapping coatings generates the flexible PI substrate of 40 μ m on PDMS; on the PI substrate, make metallic resistance TiW/Pt and TiW/Pt/Au electrode then; and play the effect of insulation protection electrode at the flexible PI film that outermost layer applies one deck 2 μ m; at last silicon chip carrier and top device thereof are positioned on 100 ℃ the hot plate; because thermal expansivity and the elastic modulus of PI and PDMS differ bigger; therefore under the effect of thermal stress; the interface adhesiveness of PDMS and PI reduces, and by thin blade and tweezers the PI flexible device is stripped down from the PDMS intermediate course on the silicon chip carrier at last.
The concrete making step of this 8 * 8 flexible MEMS array of temperature sensor is as follows:
(1) formation of PDMS intermediate course: is that 6: 1～10: 1 ratio is mixed with PDMS performed polymer and hardening agent with mass ratio, slowly stir and vacuumize and handle 15min to remove bubble, because PDMS is a non-Newtonian fluid, for obtaining smooth even PDMS intermediate course film, adopt three method for changing speed to apply PDMS, concrete grammar is: the PDMS performed polymer of capacity is dripped at carrier silicon chip center, initial speed is that 150rpm keeps the sufficiently long time, cover whole silicon wafer up to coated article, 900rpm more slowly raises speed, and keeping 40s, the 4500rpm that slowly raises speed at last also at room temperature solidifies 48h.Because solidifying PDMS surface, back is hydrophobic property, thus on PDMS, PDMS is carried out activation processing during the deposition coated article in oxygen plasma, to increase and the adhesion property that is deposited material.Treatment conditions are: 100% oxygen, and power 75W, pressure is 10mTorr, time 30s.As Fig. 1 (a)
(2) four liquid high viscositys of overlapping coating (6000～7000 mpas) PI performed polymer coating is to obtain the thickness PI substrate of 40 μ m: at PDMS intermediate course surface four liquid high viscosity PI performed polymers of overlapping coating (6000～7000 mPas), the speed of primary spin coating is 2000rpm, the spin coating time is 50s, applies back 80 ℃ of preliminary drying 5min on hot plate.In order to improve the performance of PI film, the preceding rotating speed of the rotating ratio of each overlapping coating improves 200rpm, and the preliminary drying temperature after each overlapping coating improves 5 ℃ than a preceding temperature.Because film is thicker, adopt hot plate to realize the heat treatment method of " from outward appearance to inner essence ", make the solvent in the PI performed polymer fully in time evaporate and avoid defectives such as surface generation bubble.After last the coating, PI performed polymer coat is slowly risen to 200 ℃ from 95 ℃ on hot plate, and insulation 15min, then from slowly being cooled to room temperature, to reduce the influence of thermal cycle as far as possible; As Fig. 1 (b)
(3) the positive photoresist mask layer of metal level stripping technology is graphical: apply one deck positive photoresist on the PI substrate, and with photoresist on hot plate 100 ℃, preliminary drying 2min aims at exposure and also develops and expose pre-deposition metal window; And adopt oxygen plasma activation PI surface, thereby make the PI surface that certain roughness be arranged and have active chemical bond improve with metal stick performance, PI surface active condition: 150W, 100% oxygen, time 3min; As Fig. 1 (a)
(4) thermo-sensitive resistor and be electrically connected the deposition of metal level and graphical: all metallic films comprise the continuous overlapping sputter formation of adhesion layer TiW (200 ), Pt film (1200 ) and Au (3000 ) and do not interrupt the vacuum of sputtering chamber; Metal-stripping (ift-off) technology keeps the metal level (as Fig. 1 (d)) that needs, and uses KI solution (weight ratio KI: I again
2: H
2O=4: 1: 40) erodes the Au film in the thermo-sensitive resistor zone that defines, TiW/Pt is exposed form TiW/Pt thermo-sensitive resistor and TiW/Pt/Au electrical connections simultaneously; As Fig. 1 (e)
(5) outermost layer flexible insulation protective seam: low viscosity (1200～1500 mPas) the PI performed polymer that applies skim 2 μ m, 80 ℃, 105 ℃, 140 ℃ respectively preliminary drying 5min, 4min, 4min on hot plate, then apply about 1.3 μ m photoresist mask layers, preliminary drying 90s on 100 ℃ of hot plates, aim at exposure, its time shutter increases to 2.5 times of normal exposure time, directly corrodes 20s then to expose press welding block TiW/Pt/Au in developer for positive photoresist; As Fig. 1 (f)
(6) separation of flexible device: carrier silicon chip and the flexible device made above thereof are positioned on 100 ℃ of hot plates, because the effect of thermal stress utilizes thin blade and sharp mouth tweezers that PI and device are separated from carrier.As Fig. 1 (g)
(7) regelate of PI film: the flexible device after will separating is placed and is had in the baking oven of nitrogen protection, and the flexible device after separating is positioned in the baking oven of nitrogen protection, and baking oven is warmed up to 275 ℃ gradually from room temperature, slowly drops to room temperature then.So just finished the making of 8 * 8 array-type flexible MEMS temperature sensors.
Adopting method of the present invention to make flexible array of temperature sensor only needs three mask, and its manufacture craft is simple, yield rate is high, with low cost.The device architecture of made is frivolous, pliability good, physical strength is high, thermal response speed is fast.The consistency of performance of the device cell in the flexible array of temperature sensor good (as Fig. 4), the linearity good (0.9958), the thermo-sensitive resistor temperature coefficient reaches 0.00295/ ℃, and when drive current was 10mA, its voltage sensitivity was up to 11.2mV/ ℃.This flexible array of temperature sensor can be attached to the instant distribution that any complex geometry surface is measured the temperature field simultaneously.By optimizing and combining of technology, before the full solidification branch device isolation of PI and separate latter two discrete steps and finish, make PDMS and PI and traditional MEMS technology compatibility mutually.Production method of flexibility humidity sensor of the present invention is that the development of the flexible MEMS technology of substrate has accumulated some useful experiences with the PI film particularly to other.
Claims (10)
1, a kind of method for making of flexible MEMS temperature sensor, it is characterized in that with common single throwing silicon chip be processing carrier, on silicon chip, apply a strata PDMS intermediate course earlier, and PDMS intermediate course surface carried out the oxygen plasma activation processing, and then overlapping PI performed polymer on described intermediate course, after the staged heat curing, form the PI film, successive sedimentation resistance and be electrically connected all metal film layers and on the PI film then successively with peeling off and wet etching method formation thermo-sensitive resistor and electrical connection thereof, apply skim insulating protective layer PI again topmost, and the press welding block zone that is electrically connected is exposed by wet etching, then on the hot plate that the device of processing carrier silicon chip and made is positioned over, with thin blade and tip tweezers the PI substrate is separated from the PDMS intermediate course on the carrier silicon chip simultaneously, at last flexible device is put into baking oven and made two structural sheet PI layer full solidification; Described PDMS is a dimethyl silicone polymer, and PI is a polyimide.
2, by the described production method of flexibility humidity sensor of claim 1, it is characterized in that described dimethyl silicone polymer intermediate layer thickness is 40-50 μ m, it adopts the secondary method for changing speed to be coated on the processing carrier, initial velocity is 150rpm, coated PDMS is covered on the whole silicon wafer, slowly raising speed, keep 40s to 900rpm, and then slowly raise speed, and at room temperature solidify 48h to 4500rpm;
, by the described production method of flexibility humidity sensor of claim 1, it is characterized in that intermediate course be PDMS performed polymer and hardening agent with mass ratio is to mix in 6: 1～10: 1, and vacuumize and handle 15min, to remove the bubble in the mixed liquor.
4, by the described production method of flexibility humidity sensor of claim 1, the activation processing that it is characterized in that the intermediate course surface is body activation processing such as employing oxygen, and treatment conditions are 100% oxygen, and pressure is 10mTorr, and power is 75W, and the time is 30s.
5, by the described production method of flexibility humidity sensor of claim 1, the technology that it is characterized in that the staged heat curing of four liquid high viscosity PI performed polymers of overlapping coating above the described PDMS intermediate course is that the previous rotating speed of every overlapping coating rotating ratio once improves 200rpm; Preliminary drying temperature after each overlapping coating is once higher 5 ℃ than preceding, and adopts the staged heat treatment method precuring PI prepolymer of " from outward appearance to inner essence "; After last PI preheating aggressiveness applied, hot plate temperature rose to 200 ℃ of insulation 15min by 95 ℃, slowly is cooled to room temperature then; The viscosity of described PI performed polymer is 6000-7000mPas, and forming the PI film thickness is 35-45mm.
6, by the described production method of flexibility humidity sensor of claim 1, it is characterized in that metallic film and peeling off is to apply positive photoresist, and with photoresist on hot plate 90 ℃, and preliminary drying 3min aims at exposure and also develops and expose the window of pre-deposition metal level; Oxygen plasma activates the PI surface then, and PI surface active condition is: 150W, 100%O
2, the time is 3min.
7,, it is characterized in that the deposition of described thermo-sensitive resistor and electrical connection and graphically be that described metallic film is the continuous overlapping sputter formation of adhesion layer TiW, Pt film and Au by the described production method of flexibility humidity sensor of claim 1; Peel off mask layer and top metal level thereof with acetone, and the needed metal thermo-sensitive resistor that closely contacts with the PI substrate and the TiW/Pt metal level zone of electrical connection thereof remain; Use weight ratio KI: I then
2: H
2O=4: the Au film of non-electric-connecting subregion is fallen in 1: 40 liquor kalii iodide selective etching, exposes the TiW/Pt metal level below it, thereby realizes thermo-sensitive resistor TiW/Pt simultaneously and be electrically connected the graphical of TiW/Pt/Au.
8, by the described production method of flexibility humidity sensor of claim 1, the coating that it is characterized in that the described PI of the superiors insulating protective layer is at the thick PI performed polymer of the superiors' spin coating 2 μ m, and on the hot plate 80 ℃, 105 ℃, 140 ℃ preliminary drying 5min, 4min, 4min then apply about 1.3 μ m photoresist mask layers and preliminary drying 90s on 100 ℃ of hot plates respectively; Aim at exposure, its time shutter increases to 2.5 times of normal exposure time, corrodes the performed polymer of PI until the press welding block that exposes electrical connection with developer for positive photoresist then.
9,, it is characterized in that be 100 ℃ with the PI substrate from the temperature that the PDMS intermediate interlayer on the carrier silicon chip separates by the described production method of flexibility humidity sensor of claim 1.
10, by the described production method of flexibility humidity sensor of claim 1, it is characterized in that discharging the back flexible device and be positioned in the baking oven of nitrogen protection, rise to 275 pre-℃ gradually from room temperature, slowly be cooled to room temperature then, make PI performed polymer full solidification.
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