CN101076617A - Electrochemical deposition of tantalum and/or copper in ionic liquids - Google Patents
Electrochemical deposition of tantalum and/or copper in ionic liquids Download PDFInfo
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- CN101076617A CN101076617A CNA2005800425161A CN200580042516A CN101076617A CN 101076617 A CN101076617 A CN 101076617A CN A2005800425161 A CNA2005800425161 A CN A2005800425161A CN 200580042516 A CN200580042516 A CN 200580042516A CN 101076617 A CN101076617 A CN 101076617A
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- imidazoles
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/54—Electroplating: Baths therefor from solutions of metals not provided for in groups C25D3/04 - C25D3/50
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/66—Electroplating: Baths therefor from melts
- C25D3/665—Electroplating: Baths therefor from melts from ionic liquids
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/615—Microstructure of the layers, e.g. mixed structure
- C25D5/617—Crystalline layers
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
Abstract
A carrier assembly for a compressed gas storage tank includes a first yoke defining a first concavity, and a second yoke defining a second concavity. The first and second concavities are sufficiently aligned such that a tank is at least partially containable within both the first and second concavities. In an exemplary embodiment, the first yoke also defines a third concavity and the second yoke defines a fourth concavity; the third and fourth concavities are sufficiently aligned such that another tank is at least partially containable therein. Preferably, at least one flexible strap retains the tanks with respect to the yokes.
Description
The present invention relates in ion type liquid the method for on base material electrochemical deposition of tantalum and/or copper, described ion type liquid contains at least a tetraalkylammonium cation, tetraalkyl positively charged ion, 1,1-dialkyl group tetramethyleneimine positively charged ion, 1-hydroxyalkyl-1-alkyl pyrrolidine positively charged ion, 1-hydroxyalkyl-3-alkyl imidazole positively charged ion or 1, two (hydroxyalkyl) imidazoles positively charged ions of 3-, wherein alkyl in the hydroxyalkyl or alkylidene chain all can contain 1-10 carbon atom independently of one another.
Tantalum is a kind of platinum grey, hard, very tough and tensile, flexible, can being rolled and forged metal of can stretching, can polish.It is coated with protective oxide layer or because water spontaneous oxidation in air.The thin layer of tantalum can be applied in many application; for example as barrier layer, protective layer or sealing ply; they can also be the middle layers; be used for container lining, (little) electronic component or device; tantalum electrolyte capacitance apparatus for example is when producing filament or gold bonding wire, magnetic recording media or be used for the thermal printer head of ink-jet printer.
Tantalum is with acting on the material that nail, bone substitute part, articulating implant, pressing plate, chuck screw and other device in surgery, and this is because the metal of this high atomic number is that good biological is compatible, and has good blood consistency (this and titanium similar).Implantation piece is made by the implantation piece material usually, described implantation piece material is applied (DresdnerTransferbrief by the thin layer of tantalum subsequently, publish April calendar year 2001, the 9th phase annual, Hrsg.TU Dresden, BTI-Beratungsgesellschaft f ü r Technolokgietransfer und Innovationsf rderungmbH, TechnologieZentrumDresden:Ionenbehandlung von Gef β stentserh hen Blutkompatibilit t und R ntgenkontrast oder rzte-Zeitung, 17.04.2002, Ein Prothesentyp f ü r alle-das ist Schnee von gestern).
Copper is a kind of corrosion resistant precious metal, and it has excellent electroconductibility and thermal conductivity and shows low-down electromigration behavior.In recent years, the thin layer of copper substitutes the contact material of original aluminium that uses as semiconductor structure in chip technology.
In order on base material, to apply thin layer, the CVD (Chemical Vapor Deposition) method of more known physics of those skilled in the art and chemistry, for example sputtering method or vacuum vapor deposition method.Electrochemically depositing copper is known (A.Thies, Galvanotechnik, 11 (2002) 2837-2843) equally from water-bearing media.In water-bearing media on tantalum during electrochemically depositing copper, with in the embedded technology of what is called, expect the same, wherein silicon is capped the thick thin tantalum layer with 20-70nm by vapour deposition, in water-bearing media, apply copper contact thereon, problem below this has occurred, promptly before carrying out copper deposition, tantalum is because water and spontaneous oxidation.Between copper and tantalum, produced flagrant contact resistance thus at surface oxidation.
Because the reactivity of tantalum, opposite with copper is can not be in water-bearing media deposition of tantalum.Because risk of explosion and the difficulty that is prepared into anhydrous form, organic solvent also is left out.
Become known at high temp. salt melt (LiF/NaF/CaF for example
2Melt) in 500 ℃ (people such as Mehmood, Materials Transactions, 44 (2003), 1659-1662), perhaps on the iron in 600-900 ℃ of temperature by for example at the eutectic mixture (K among the LiF/NaF/KF (50/30/20)
2TaF
7The electrochemical method of mixture (JP H06-57479) deposition of tantalum.The excessive temperature of described high temp. salt melt and corrodibility make described method for some application (for example chip technology application) inapplicable or because secure context when depositing and high expense and uneconomical.
JP 2001279486 has put down in writing a kind of electrochemical method that is used for deposition of tantalum, and wherein said being deposited in the melting salt carried out, and described melting salt is made up of the fluorochemical of tantalum pentachloride, alkyl imidazolitm chloride and basic metal or alkaline-earth metal.Preferably, by ratio be the TaCl of 30mol: 60mol: 10mol
5, LiF and 1-ethyl-3-methyl imidazolitm chloride system deposit in about 100 ℃ temperature.When repeating this operation, find not deposit pure element, but always have a large amount of muriates.
Task of the present invention is to find a kind of alternative approach that is used under anhydrous condition electrochemical deposition of tantalum and/or copper.
Task of the present invention is solved by method of the present invention.
Theme of the present invention be in ion type liquid on base material the method for electrochemical deposition of tantalum and/or copper, described ion type liquid contains at least a tetraalkylammonium cation, tetraalkyl positively charged ion, 1,1-dialkyl group tetramethyleneimine positively charged ion, 1-hydroxyalkyl-1-alkyl pyrrolidine positively charged ion, 1-hydroxyalkyl-3-alkyl imidazole positively charged ion or 1, two (hydroxyalkyl) imidazoles positively charged ions of 3-, wherein alkyl in the hydroxyalkyl or alkylidene chain all can contain 1-10 carbon atom independently of one another.
Tantalum or copper are deposited on the different substrate materials in different application independently of one another.The deposition of tantalum and copper also can successively be carried out, for example desirable when the special applications of chip technology, also promptly at first tantalum is electrochemically deposited on the silicon (for example silicon wafer), in same medium, copper is deposited on the silicon that applies with tantalum then by method of the present invention.The shortcoming of the tantalum CVD (Chemical Vapor Deposition) method of prior art is that the corner of silicon wafer and edge and required 20nm tantalum layer variable thickness cause, and this can overcome by the method according to this invention.
Be applicable at least a tetraalkylammonium cation of containing of the inventive method, tetraalkyl positively charged ion, 1,1-dialkyl group tetramethyleneimine positively charged ion, 1-hydroxyalkyl-1-alkyl pyrrolidine positively charged ion, 1-hydroxyalkyl-3-alkyl imidazole positively charged ion or 1, the two cationic ion type liquids of (hydroxyalkyl) imidazoles of 3-have good electrical conductivity and usually until 400 ℃ thermally-stabilised, the alkyl of wherein said hydroxyalkyl or alkylidene group all have 1-10 C atom independently of one another.They for example have wide electrochemistry scope at the negative electrode branch road, with respect to ferrocene/ferrocene (Ferrocinium) reach-2000mV is to-3500mV, preferably with respect to ferrocene/ferrocene reach-2700mV is to-3000mV.
Alkyl with 1-10 carbon atom for example is interpreted as methyl, ethyl, sec.-propyl, propyl group, butyl, sec-butyl or the tertiary butyl, also has amyl group, 1-, 2-or 3-methyl butyl, 1 in addition, 1-, 1,2-or 2,2-dimethyl propyl, 1-ethyl propyl, hexyl, heptyl, octyl group, nonyl or decyl.These alkyl can some or all ofly be replaced by fluorine.Fluoro-alkyl for example is difluoromethyl, trifluoromethyl, pentafluoroethyl group, five fluoropropyls, seven fluoropropyls, seven fluorine butyl or nine fluorine butyl.
Hydroxyalkyl with 1-10 carbon atom is interpreted as for example 1-hydroxymethyl, 2-hydroxyethyl, 3-hydroxypropyl, 4-hydroxybutyl, also has 5-hydroxyl amyl group, 6-hydroxyl hexyl, 7-hydroxyl heptyl, 8-hydroxyl octyl group, 9-hydroxyl nonyl or 10-hydroxyl decyl in addition.The alkylidene chain of hydroxyl also can some or all ofly be replaced by fluorine.The fluoro hydroxyalkyl can for example pass through segment bounds-(CHF)
n-OH or-(CF
2)
n-OH statement, wherein n represents 1,2,3,4,5,6,7,8,9 or 10.
Can be selected from perfluoro alkyl sulfonic acid root, perfluor acetate moiety, two (fluorosulfonyl) imide, two (perfluoroalkyl group sulfonyl) imide, three (perfluoroalkyl) trifluoro phosphate radical, two (perfluoroalkyl) tetrafluoro phosphate radical, three (perfluoroalkyl group sulfonyl) methides or perfluoroalkyl borate with the combined suitable anion that satisfies above-mentioned condition of positively charged ion of the present invention.
The notion of perfluoroalkyl is meant that whole H atoms of corresponding alkyl are all replaced by the F atom.Perfluoroalkyl in given negatively charged ion preferably all has 1-10 carbon atom independently of one another, preferably has 1,2,3 or 4 C atom.
Being fit to negatively charged ion of the present invention can exemplaryly be selected from: the trifluoromethane sulfonic acid root; the pentafluoroethyl group sulfonate radical; seven fluoropropyl sulfonate radicals; nine fluorine butyl sulfonic acid roots; two (fluorosulfonyl) imide; the perfluor acetate moiety; two (trifluoromethyl sulfonyl) imide; two (pentafluoroethyl group alkylsulfonyl) imide; two (seven fluoropropyl alkylsulfonyls) imide; two (nine fluorine butyl alkylsulfonyls) imide; three (trifluoromethyl sulfonyl) methide; three (pentafluoroethyl group alkylsulfonyl) methide; three (seven fluoropropyl alkylsulfonyls) methide; three (nine fluorine butyl alkylsulfonyls) methide; three (pentafluoroethyl group) trifluoro phosphate radical; three (seven fluoropropyls) trifluoro phosphate radical; three (nine fluorine butyl) trifluoro phosphate radical; two (pentafluoroethyl group) tetrafluoro phosphate radical; four (trifluoromethyl) borate; four (pentafluoroethyl group) borate; trifluoromethyl trifluoro borate; pentafluoroethyl group trifluoro borate; two (trifluoromethyl) boron difluoride acid group; two (pentafluoroethyl group) boron difluoride acid group; three (trifluoromethyl) fluoroboric acid root; three (pentafluoroethyl group) fluoroboric acid root or two (pentafluoroethyl group) trifluoromethyl fluoroboric acid root.
As long as a plurality of perfluoroalkyls occur in negatively charged ion, these perfluoroalkyls just can be represented various perfluoroalkyls independently of one another so.Therefore, fall into for example mixed anion such as trifluoromethyl sulfonyl pentafluoroethyl group alkylsulfonyl imide, two (trifluoromethyl) alkylsulfonyl pentafluoroethyl group alkylsulfonyl methide that also has of above-mentioned definition.
Particularly preferably be, negatively charged ion is selected from trifluoromethane sulfonic acid root, two (trifluoromethyl sulfonyl) imide or three (pentafluoroethyl group) trifluoro phosphate radical.
Suitable positively charged ion is the tetramethyl-ammonium of straight chain or side chain optionally, tetraethyl ammonium, tetrapropyl ammonium, TBuA, the four pentyl ammonium, tetrahexyl ammonium, four heptyl ammoniums, four octyl group ammoniums, four nonyl ammoniums, four decyl ammoniums, trimethylalkyl ammonium, trimethylammonium (ethyl) ammonium, triethyl (methyl) ammonium, three hexyl ammoniums, methyl (trioctylphosphine) ammonium, tetramethyl-, tetraethyl-, tetrapropyl , tetrabutyl , four pentyl , four hexyl , four heptyl , four octyl group , four nonyl , four decyl , three hexyls-four decyl , triisobutyl (methyl) , tributyl (ethyl) , tributyl (methyl) , 1,1-dimethyl pyrrolidine , 1-methyl isophthalic acid-ethyl pyrrolidine , 1-methyl isophthalic acid-propyl pyrrole alkane , 1-methyl isophthalic acid-butyl pyrrolidine , 1-methyl-1-pentene base tetramethyleneimine , 1-methyl isophthalic acid-hexyl tetramethyleneimine , 1-methyl isophthalic acid-heptyl tetramethyleneimine , 1-methyl isophthalic acid-octyl group tetramethyleneimine , 1-methyl isophthalic acid-nonyl tetramethyleneimine , 1-methyl isophthalic acid-decyl tetramethyleneimine , 1,1-diethyl tetramethyleneimine , 1-ethyl-1-propyl pyrrole alkane , 1-ethyl-1-butyl pyrrolidine , 1-ethyl-1-amyl group tetramethyleneimine , 1-ethyl-1-hexyl tetramethyleneimine , 1-ethyl-1-heptyl tetramethyleneimine , 1-ethyl-1-octyl group tetramethyleneimine , 1-ethyl-1-nonyl tetramethyleneimine , 1-ethyl-1-decyl tetramethyleneimine , 1,1-dipropyl tetramethyleneimine , 1-propyl group-1-butyl pyrrolidine , 1-propyl group-1-amyl group tetramethyleneimine , 1-propyl group-1-hexyl tetramethyleneimine , 1-propyl group-1-heptyl tetramethyleneimine , 1-propyl group-1-octyl group tetramethyleneimine , 1-propyl group-1-nonyl tetramethyleneimine , 1-propyl group-1-decyl tetramethyleneimine , 1,1-dibutyl tetramethyleneimine , 1-butyl-1-amyl group tetramethyleneimine , 1-butyl-1-hexyl tetramethyleneimine , 1-butyl-1-heptyl tetramethyleneimine , 1-butyl-1-octyl group tetramethyleneimine , 1-butyl-1-nonyl tetramethyleneimine , 1-butyl-1-decyl tetramethyleneimine , 1,1-diamyl tetramethyleneimine , 1-amyl group-1-hexyl tetramethyleneimine , 1-amyl group-1-heptyl tetramethyleneimine , 1-amyl group-1-octyl group tetramethyleneimine , 1-amyl group-1-nonyl tetramethyleneimine , 1-amyl group-1-decyl tetramethyleneimine , 1,1-dihexyl tetramethyleneimine , 1-hexyl-1-heptyl tetramethyleneimine , 1-hexyl-1-octyl group tetramethyleneimine , 1-hexyl-1-nonyl tetramethyleneimine , 1-hexyl-1-decyl tetramethyleneimine , 1,1-dihexyl tetramethyleneimine , 1-hexyl-1-heptyl tetramethyleneimine , 1-hexyl-1-octyl group tetramethyleneimine , 1-hexyl-1-nonyl tetramethyleneimine , 1-hexyl-1-decyl tetramethyleneimine , 1,1-diheptyl tetramethyleneimine , 1-heptyl-1-octyl group tetramethyleneimine , 1-heptyl-1-nonyl tetramethyleneimine , 1-heptyl-1-decyl tetramethyleneimine , 1,1-dioctyl tetramethyleneimine , 1-octyl group-1-nonyl tetramethyleneimine , 1-octyl group-1-decyl tetramethyleneimine , 1,1-dinonyl tetramethyleneimine , 1-nonyl-1-decyl tetramethyleneimine or 1,1-didecyl tetramethyleneimine , 1-hydroxymethyl-1-crassitude , 1-hydroxymethyl-1-ethyl pyrrolidine , 1-hydroxymethyl-1-propyl pyrrole alkane , 1-hydroxymethyl-1-butyl pyrrolidine , 1-(2-hydroxyethyl)-1-crassitude , 1-(2-hydroxyethyl)-1-ethyl pyrrolidine , 1-(2-hydroxyethyl)-1-propyl pyrrole alkane , 1-(2-hydroxyethyl)-1-butyl pyrrolidine , 1-(3-hydroxypropyl)-1-crassitude , 1-(3-hydroxypropyl)-1-ethyl pyrrolidine , 1-(3-hydroxypropyl)-1-propyl pyrrole alkane , 1-(3-hydroxypropyl)-1-butyl pyrrolidine , 1-(4-hydroxybutyl)-1-crassitude , 1-(4-hydroxybutyl)-1-ethyl pyrrolidine , 1-(4-hydroxybutyl)-1-propyl pyrrole alkane or 1-(4-hydroxybutyl)-1-butyl pyrrolidine , 1-(1-hydroxymethyl)-3-methyl-imidazoles , 1-(1-hydroxymethyl)-3-ethyl imidazol(e) , 1-(1-hydroxymethyl)-3-propyl group-imidazoles , 1-(1-hydroxymethyl)-3-butyl-imidazoles , 1-(2-hydroxyethyl)-3-Methylimidazole , 1-(2-hydroxyethyl)-3-ethyl-imidazoles , 1-(2-hydroxyethyl)-3-propyl group-imidazoles , 1-(2-hydroxyethyl)-3-butyl-imidazoles , 1-(3-hydroxypropyl)-3-methyl-imidazoles , 1-(3-hydroxypropyl)-3-ethyl imidazol(e) , 1-(3-hydroxypropyl)-3-propyl group-imidazoles , 1-(3-hydroxypropyl)-3-butyl-imidazoles , 1-(4-hydroxybutyl)-3-Methylimidazole , 1-(4-hydroxybutyl)-3-ethyl-imidazoles , 1-(4-hydroxybutyl)-3-propyl group-imidazoles , 1-(4-hydroxybutyl)-3-butyl-imidazoles , 1, two (1-the hydroxymethyl)-imidazoles of 3-, 1, two (2-the hydroxyethyl)-imidazoles of 3-, 1, two (3-the hydroxypropyl)-imidazoles of 3-, 1, two (4-the hydroxybutyl)-imidazoles of 3-, 1-(2-hydroxyethyl)-3-(1-hydroxymethyl)-imidazoles , 1-(2-hydroxyethyl)-3-(3-hydroxypropyl)-imidazoles , 1-(2-hydroxyethyl)-3-(4-hydroxybutyl)-imidazoles , 1-(3-hydroxypropyl)-3-(1-hydroxymethyl)-imidazoles , 1-(3-hydroxypropyl)-3-(2-hydroxyethyl)-imidazoles , 1-(3-hydroxypropyl)-3-(4-hydroxybutyl)-imidazoles , 1-(4-hydroxybutyl)-3-(1-hydroxymethyl)-imidazoles , 1-(4-hydroxybutyl)-3-(2-hydroxyethyl)-imidazoles or 1-(4-hydroxybutyl)-3-(3-hydroxypropyl)-imidazoles .
Specially suitable positively charged ion is a tetramethyl-ammonium, wherein alkyl can have the trimethylalkyl ammonium of 1 to 10 C atom, three hexyls-four decyl , three-iso-octyl (methyl) , tributyl (ethyl) , tributyl (methyl) , 1-butyl-1-crassitude , 1-butyl-1-ethyl pyrrolidine , 1-hexyl-1-crassitude , 1-methyl isophthalic acid-octyl group tetramethyleneimine or 1-(2-hydroxyethyl)-3-methyl-imidazoles , specially suitable positively charged ion are 1-butyl-1-crassitude , 1-hexyl-1-crassitude , 1-methyl isophthalic acid-octyl group tetramethyleneimine or 1-(2-hydroxyethyl)-3-methyl-imidazoles .
The specially suitable ion type liquid that is used for the inventive method is:
1-butyl-1-crassitude trifluoromethyl sulfonic acid; two (trifluoromethyl sulfonyl) imides of 1-butyl-1-crassitude ; 1-butyl-1-crassitude three (pentafluoroethyl group) three fluorophosphates; 1-hexyl-1-crassitude trifluoromethyl sulfonic acid; two (trifluoromethyl sulfonyl) imides of 1-hexyl-1-crassitude ; 1-hexyl-1-crassitude three (pentafluoroethyl group) three fluorophosphates; 1-methyl isophthalic acid-octyl group tetramethyleneimine trifluoromethyl sulfonic acid; two (trifluoromethyl sulfonyl) imides of 1-methyl isophthalic acid-octyl group tetramethyleneimine ; 1-methyl isophthalic acid-octyl group tetramethyleneimine three (pentafluoroethyl group) three fluorophosphates; 1-(2-hydroxyethyl)-3-Methylimidazole trifluoromethyl sulfonic acid; two (trifluoromethyl sulfonyl) imides of 1-(2-hydroxyethyl)-3-Methylimidazole or 1-(2-hydroxyethyl)-3-Methylimidazole three (pentafluoroethyl group) three fluorophosphates.
According to the inventive method, tantalum or cupric ion are dissolved in those suitable ion type liquids of for example putting down in writing previously.This on the one hand can be by anode dissolution of metals in ion type liquid or suitable metal-salt (TaH for example
4Perhaps TaH
5) carry out, by being dissolved in the ion type liquid, tantalum or mantoquita undertaken on the other hand.
Suitable copper or tantalum salt are for example copper (II), copper (I), tantalum (IV) or tantalum (V) halogenide, for example muriate, bromide, iodide or fluorochemical; Imide, for example copper (II), copper (I), tantalum (IV) or tantalum (V) two (perfluoroalkyl group sulfonyl) imide; Acid amides, for example Ta (NR
2)
4Perhaps Ta (NR
2)
5Wherein R can mean the alkyl of 1-4 carbon atom, alcoholate, for example copper (II), copper (I), tantalum (IV) or tantalum (V) methylate, copper (II), copper (I), tantalum (IV) or tantalum (V) ethylate or copper (II), copper (I), tantalum (IV) or tantalum (V) tartrate.
Also can consider salt TaX as tantalum salt
y(two (trifluoromethyl sulfonyl) imide)
z, wherein X=F, Cl, Br or I, y=1,2,3 or 4, z=1,2,3 or 4, and y+z's and equal 4 or 5.
The water-free salt of preferred use.Described salt can also contain crown ether.The ion type liquid that comprises mantoquita can also drying.
Specially suitable mantoquita or tantalum salt are that its negatively charged ion is consistent with the negatively charged ion of ion type liquid or chemically very similar salt.
In a special embodiment, carry out first tantalum deposition according to the present invention, wherein be dissolved in tantalum salt in the ion type liquid and carry out second bronze medal deposition according to the present invention, wherein cupric ion is incorporated in the ion type liquid by anodic oxidation, guarantees not moisture thus.
According to the present invention during electrochemical deposition of tantalum the existence of basic metal or alkaline-earth metal fluoride all be proved to be favourable.Described fluorochemical should preferably add, more preferably add with 1: 1 ratio with 2: 1 (fluorochemical/tantalum salt) to 1: 1 (fluorochemical/tantalum salt) ratio.
Preferred basic metal or alkaline-earth metal fluoride are for example lithium fluoride, Sodium Fluoride, Potassium monofluoride, magnesium fluoride or Calcium Fluoride (Fluorspan).Particularly preferably be the interpolation lithium fluoride.
Particularly preferred tantalum salt is tetrafluoride tantalum, tantalum pentafluoride, four tantalum chlorides, tetrabormated tantalum, tetraiodide tantalum, tantalum pentabromide or pentaiodo tantalum.Particularly preferably be most tantalum pentafluoride.
In order to carry out metal deposition, the ionic concn in the ion type liquid is preferably 10
-5To 10mol/l.Preferably with 10
-3To 10
-1The ionic concn of mol/l is operated.For the tantalum deposition of the present invention of carrying out under basic metal or alkaline-earth metal fluoride, particularly lithium fluoride existence condition, the ionic concn that all confirms 0.25mol/l to 1mol/l in all cases is a preferred range.
Metal deposition of the present invention is for example carried out under argon gas at protective atmosphere, and wherein oxygen and water-content should be lower than 1ppm.Described being deposited in 3 electrode batteries carried out, and just as known to those skilled in the art (for example from A.J.Bard, L.R.Faulkner, ElectrochemicalMethods, Wiley).On suitable substrate during deposited copper copper wire as counter electrode and reference electrode.Platinum filament is with valid reference electrode and counter electrode when tantalum deposits.
Usually, various electrode materialss all are suitable, as long as can guarantee that by the test setting product that produces can not disturb the technology of working electrode on counter electrode.
Method of the present invention is preferably carried out with the constant voltage form, is 0 to-2000mV to the sedimentary electrode potential of tantalum, the temperature between 10 ℃ to 350 ℃, and preferably temperature is carried out between 100 ℃ to 300 ℃.
As is known to persons skilled in the art, method of the present invention can also be implemented by pulsed technique, for example at J.-C.Puippe, F.Leaman, Pulse-Plating:ElektrolytischeMetallabscheidung mit Pulsstrom, Eugen G.Leuze Verlag is put down in writing in 1990.
According to the inventive method, can deposit metal tantalum or copper that bed thickness is 200 μ m-200pm, i.e. crystallite or the layer of brilliant thickness received.Required bed thickness can be regulated by electrode potential and electric charge that flows through and electrochemical parameter.
This relation can faraday inductive law be described usually:
F=Faraday's number wherein, A=area, ρ=density metal, I=electric current, t=time, the molar mass of M=metal.
Can regulate bed thickness by electric current and time at last.
Fig. 1 shows in room temperature TaF
5At two (trifluoromethyl sulfonyl) imide (the BMP Tf of 1-butyl pyrrolidine
2N) cyclic voltammogram of about 1M solution on Au (111) in.
According to Fig. 1, during the inventive method, tantalum pentafluoride is reduced in a plurality of reduction steps significantly.If to TaF
5Add LiF in two (trifluoromethyl sulfonyl) imides of/1-butyl-1-crassitude , produce new reduction peak (referring to Fig. 2) so and obtain tantalum (referring to Fig. 3).
Fig. 2 shows in 200 ℃ of TaF in two (trifluoromethyl sulfonyl) imides of 1-butyl-1-crassitude
50.25M solution and the cyclic voltammogram of 0.25M solution on Au (111) of LiF.
Fig. 3 shows in 200 ℃ from TaF
5/ LiF/BMP Tf
2N[0.5mol/l TaF
5Perhaps 0.5mol/l LiF is in BMP Tf
2Among the N] X-ray diffractogram (XRD=X ray diffraction, cobalt K α is as X ray) of sedimentary tantalum.
Fig. 4 has shown wherein first anode dissolution on Au (111) cyclic voltammogram of the 1-butyl of copper-1-crassitude trifluoromethyl sulfonic acid.The concentration of cupric ion in ion type liquid is 10
-1Mol/l.
The Fig. 4 that has wherein shown twice continuous sweep shows twice or three reduction processes on Au (111), wherein-1000mV and-process between the 1700mV can deposit owing to copper.Copper also falls in the nano level especially with the very high quality deposition in the methods of the invention.
Under comparatively high temps, obtained same cyclic voltammogram qualitatively, but current density is higher.
For electrochemistry metal deposition of the present invention, can all be feasible as the various base materials of negative electrode.
The geometrical shape of base material can freely be selected and be unrestricted.
Suitable substrates for example can be selected from all optional types, and for example nonmetal, semi-metal, metal, metal alloy, conduction or metallized ceramic or conduction or metallized plastic all are feasible.
Preferred nonmetal for example is graphite.
Preferred semi-metal for example is a silicon.
Preferred metal for example is gold, platinum, copper, iron, cobalt, nickel or molybdenum.
Preferred metal alloy for example is various steel or nickelalloy.
Suitable substrates also can for example be made of one deck or multilayer, applies other tantalum or copper as middle layer or final layer according to the inventive method thereon.Therefore, base material enumerate can not be interpreted as by any way restrictive.Technician in Application Areas can need not out of Memory selection suitable substrates.
After deposition of tantalum and/or copper, can with organic solvent wash ion type liquid off or under the situation of copper water wash ion type liquid off.
Appropriate organic solvent for example is toluene, benzene, methylene dichloride, acetonitrile, acetone, methyl alcohol, ethanol or Virahol.
Theme of the present invention also is a specific implementations of present method, wherein at first in ion type liquid on structurized silicon deposition of tantalum, wherein said ion type liquid contains at least a tetraalkylammonium cation, tetraalkyl positively charged ion, 1,1-dialkyl group tetramethyleneimine positively charged ion, 1-hydroxyalkyl-1-alkyl pyrrolidine positively charged ion, 1-hydroxyalkyl-3-alkyl imidazole positively charged ion or 1, two (hydroxyalkyl) imidazoles positively charged ions of 3-, wherein alkyl in the 1-hydroxyalkyl or alkylidene chain all can contain 1-10 carbon atom independently of one another, under electrochemical voltage control condition, replace pure ion type liquid, under the control voltage conditions, fill and deposited copper then with the ion type liquid of copper ions with the ion type liquid that contains tantalum ion.
The aftertreatment of sedimentary actual conditions and suitable ion type liquid and the base material through applying provides in previous embodiments.
Even do not having under other embodiment situation, those skilled in the art also can set out thus and utilize foregoing description in maximum range.Therefore, only be descriptive preferred embodiment, in any case can not be understood that restrictive disclosure by any way with embodiment.
Embodiment:
Electrochemical measurement is by Princeton Applied Research (EG﹠amp; G) PAR 2263 potentiostat/galvanostat of company are carried out.
It is usually, various that to have or do not have the potentiostat of pulse generator all be suitable.
Embodiment 1: by TaF
5Deposition of tantalum
Preparation TaF
5With the saturated solution of LiF in two (trifluoromethyl sulfonyl) imides of ion type liquid 1-butyl-1-methyl-2-pyrrolidone, and under protective atmosphere, it is transferred in the 3-electrode measurement battery in room temperature.Utilized typical 3-electrode measurement battery, for example A.J.Bard and L.R.Faulkner, Electrochemical Methods, the battery described in the Wiley.
3-electrode measurement battery has as the gold electrode of working electrode (negative electrode) with as the platinum silk of accurate reference and counter electrode.
Electrode potential is adjusted to respect to the accurate reference of platinum is-1300mV.
Being deposited on of tantalum-1250mV begins.Upward deposited little crystal grain at Au (111) with a few nanometer height in clear show (Fig. 5) of-1200 ℃ original position STM photo.These the are grain formation thick layer of about 100nm.Described metallicity can be confirmed by current/voltage tunnel spectrum (Fig. 6).
Embodiment 2: be similar to embodiment 1 on platinum from TaF
5Deposition of tantalum, preparation TaF
5With the 0.25M solution of LiF in two (trifluoromethyl sulfonyl) imides of ion type liquid 1-butyl-1-methyl-2-pyrrolidone, and this solution is being transferred in the 3-electrode measurement battery in room temperature under the protective atmosphere.Wherein utilized typical 3-electrode measurement battery, for example A.J.Bard and L.R.Faulkner, Electrochemical Methods, the battery described in the Wiley.Described 3-electrode measurement battery has as the gold electrode of working electrode (negative electrode) with as the platinum silk of accurate reference and counter electrode.
Electrode potential is adjusted to respect to the accurate reference of platinum is-1300mV.
Being deposited on of tantalum-1250mV begins.At this also is to deposit the thick little crystal grain tantalum layer of about 100nm.This can be confirmed by REM photo (Fig. 9).
Embodiment 3: from the 1-butyl-1-crassitude fluoroform sulphonate deposited copper of copper ions
In 3-electrode measurement battery, set up 10 with coulometry with anhydrous ion type liquid 1-butyl-1-crassitude fluoroform sulphonate
-1The copper ion concentration of mol/l.
At this, described 3-electrode measurement battery is made up of as the Cu of reference electrode with as the platinum of counter electrode the Cu (being shaped to spirrillum) as working electrode.The electrode potential of coppersmith being made electrode with respect to Cu/Cu+ is adjusted to+500mV.Dissolved cupric ion amount can be calculated with following formula by the quantity of electric charge:
C=ionic concn wherein, I=electric current, V=volume, F=96485c/mol.
It is desirable to separating platinum counter electrode spatially, copper deposits once more on the platinum counter electrode to avoid.
REM photo (Fig. 7) demonstrates with nano level deposition copper.Produced the bed thickness of 10 μ m at this.Bed thickness is unrestricted in principle, promptly can produce required thickness according to using.
Embodiment 4:
Be similar to embodiment 3, deposited copper in two (trifluoromethyl sulfonyl) imides of 1-butyl-1-crassitude .In this ionic liquid, deposit with nano level equally, wherein can the variable adjustment bed thickness.
Embodiment 5:
In 1-butyl-1-crassitude fluoroform sulphonate by copper trifluoromethanesulfcomposite (II) deposited copper
In first step, the copper trifluoromethanesulfcomposite (II) that will contain crystal water is dissolved in 1-butyl-1-crassitude fluoroform sulphonate with 1M, and it is moved in the 3-electrode measurement battery under the shielding gas condition.
Described 3-electrode measurement battery has as the gold electrode of working electrode (negative electrode) with as the copper wire of accurate reference and counter electrode.Electrode potential is adjusted to respect to Cu/Cu
+For-500mV.
In cyclic voltammetric Fig. 8 clearly visible be used for 2 redox processeses of reductive and be used for two of oxidation separate so not good process.Copper begins at body being deposited on approximately in mutually-1000mV.In the first reduction peak scope in approximately-the 250mV place confirms not change at electrode surface.
Be similar to embodiment 3, with nano level (less than 59nm) deposition, can regulate changeably by wherein said bed thickness in this ion type liquid for copper.Typically deposit 10 μ m bed thickness.
Claims (12)
- In ion type liquid on base material the method for electrochemical deposition of tantalum and/or copper, described ion type liquid contains at least a tetraalkylammonium cation, tetraalkyl positively charged ion, 1,1-dialkyl group tetramethyleneimine positively charged ion, 1-hydroxyalkyl-1-alkyl pyrrolidine positively charged ion, 1-hydroxyalkyl-3-alkyl imidazole positively charged ion or 1, two (hydroxyalkyl) imidazoles positively charged ions of 3-, wherein alkyl in the hydroxyalkyl or alkylidene chain all can contain 1-10 carbon atom independently of one another.
- 2. the method for claim 1 is characterized in that, described ion type liquid has in the negative electrode branch road with respect to ferrocene/ferrocene and is-2000mV wide the electrochemical window to-3500mV.
- 3. claim 1 or 2 method; it is characterized in that the negatively charged ion in the described ion type liquid is selected from perfluoro alkyl sulfonic acid root, perfluor acetate moiety, two (fluorosulfonyl) imide, two (perfluoroalkyl group sulfonyl) imide, three (perfluoroalkyl) trifluoro phosphate radical, two (perfluoroalkyl) tetrafluoro phosphate radical, three (perfluoroalkyl group sulfonyl) methides or perfluoroalkyl borate.
- 4. one or multinomial method among the claim 1-3, it is characterized in that, described positively charged ion is selected from the tetramethyl-ammonium of straight chain or side chain, tetraethyl ammonium, tetrapropyl ammonium, TBuA, the four pentyl ammonium, tetrahexyl ammonium, four heptyl ammoniums, four octyl group ammoniums, four nonyl ammoniums, four decyl ammoniums, trimethylalkyl ammonium, trimethylammonium (ethyl) ammonium, triethyl (methyl) ammonium, three hexyl ammoniums, methyl (trioctylphosphine) ammonium, tetramethyl-, tetraethyl-, tetrapropyl , tetrabutyl , four pentyl , four hexyl , four heptyl , four octyl group , four nonyl , four decyl , three hexyls-four decyl , triisobutyl (methyl) , tributyl (ethyl) , tributyl (methyl) , 1,1-dimethyl pyrrolidine , 1-methyl isophthalic acid-ethyl pyrrolidine , 1-methyl isophthalic acid-propyl pyrrole alkane , 1-methyl isophthalic acid-butyl pyrrolidine , 1-methyl-1-pentene base tetramethyleneimine , 1-methyl isophthalic acid-hexyl tetramethyleneimine , 1-methyl isophthalic acid-heptyl tetramethyleneimine , 1-methyl isophthalic acid-octyl group tetramethyleneimine , 1-methyl isophthalic acid-nonyl tetramethyleneimine , 1-methyl isophthalic acid-decyl tetramethyleneimine , 1,1-diethyl tetramethyleneimine , 1-ethyl-1-propyl pyrrole alkane , 1-ethyl-1-butyl pyrrolidine , 1-ethyl-1-amyl group tetramethyleneimine , 1-ethyl-1-hexyl tetramethyleneimine , 1-ethyl-1-heptyl tetramethyleneimine , 1-ethyl-1-octyl group tetramethyleneimine , 1-ethyl-1-nonyl tetramethyleneimine , 1-ethyl-1-decyl tetramethyleneimine , 1,1-dipropyl tetramethyleneimine , 1-propyl group-1-butyl pyrrolidine , 1-propyl group-1-amyl group tetramethyleneimine , 1-propyl group-1-hexyl tetramethyleneimine , 1-propyl group-1-heptyl tetramethyleneimine , 1-propyl group-1-octyl group tetramethyleneimine , 1-propyl group-1-nonyl tetramethyleneimine , 1-propyl group-1-decyl tetramethyleneimine , 1,1-dibutyl tetramethyleneimine , 1-butyl-1-amyl group tetramethyleneimine , 1-butyl-1-hexyl tetramethyleneimine , 1-butyl-1-heptyl tetramethyleneimine , 1-butyl-1-octyl group tetramethyleneimine , 1-butyl-1-nonyl tetramethyleneimine , 1-butyl-1-decyl tetramethyleneimine , 1,1-diamyl tetramethyleneimine , 1-amyl group-1-hexyl tetramethyleneimine , 1-amyl group-1-heptyl tetramethyleneimine , 1-amyl group-1-octyl group tetramethyleneimine , 1-amyl group-1-nonyl tetramethyleneimine , 1-amyl group-1-decyl tetramethyleneimine , 1,1-dihexyl tetramethyleneimine , 1-hexyl-1-heptyl tetramethyleneimine , 1-hexyl-1-octyl group tetramethyleneimine , 1-hexyl-1-nonyl tetramethyleneimine , 1-hexyl-1-decyl tetramethyleneimine , 1,1-dihexyl tetramethyleneimine , 1-hexyl-1-heptyl tetramethyleneimine , 1-hexyl-1-octyl group tetramethyleneimine , 1-hexyl-1-nonyl tetramethyleneimine , 1-hexyl-1-decyl tetramethyleneimine , 1,1-diheptyl tetramethyleneimine , 1-heptyl-1-octyl group tetramethyleneimine , 1-heptyl-1-nonyl tetramethyleneimine , 1-heptyl-1-decyl tetramethyleneimine , 1,1-dioctyl tetramethyleneimine , 1-octyl group-1-nonyl tetramethyleneimine , 1-octyl group-1-decyl tetramethyleneimine , 1,1-dinonyl tetramethyleneimine , 1-nonyl-1-decyl tetramethyleneimine or 1,1-didecyl tetramethyleneimine , 1-hydroxymethyl-1-crassitude , 1-hydroxymethyl-1-ethyl pyrrolidine , 1-hydroxymethyl-1-propyl pyrrole alkane , 1-hydroxymethyl-1-butyl pyrrolidine , 1-(2-hydroxyethyl)-1-crassitude , 1-(2-hydroxyethyl)-1-ethyl pyrrolidine , 1-(2-hydroxyethyl)-1-propyl pyrrole alkane , 1-(2-hydroxyethyl)-1-butyl pyrrolidine , 1-(3-hydroxypropyl)-1-crassitude , 1-(3-hydroxypropyl)-1-ethyl pyrrolidine , 1-(3-hydroxypropyl)-1-propyl pyrrole alkane , 1-(3-hydroxypropyl)-1-butyl pyrrolidine , 1-(4-hydroxybutyl)-1-crassitude , 1-(4-hydroxybutyl)-1-ethyl pyrrolidine , 1-(4-hydroxybutyl)-1-propyl pyrrole alkane or 1-(4-hydroxybutyl)-1-butyl pyrrolidine , 1-(1-hydroxymethyl)-3-methyl-imidazoles , 1-(1-hydroxymethyl)-3-ethyl imidazol(e) , 1-(1-hydroxymethyl)-3-propyl group-imidazoles , 1-(1-hydroxymethyl)-3-butyl-imidazoles , 1-(2-hydroxyethyl)-3-Methylimidazole , 1-(2-hydroxyethyl)-3-ethyl-imidazoles , 1-(2-hydroxyethyl)-3-propyl group-imidazoles , 1-(2-hydroxyethyl)-3-butyl-imidazoles , 1-(3-hydroxypropyl)-3-methyl-imidazoles , 1-(3-hydroxypropyl)-3-ethyl imidazol(e) , 1-(3-hydroxypropyl)-3-propyl group-imidazoles , 1-(3-hydroxypropyl)-3-butyl-imidazoles , 1-(4-hydroxybutyl)-3-Methylimidazole , 1-(4-hydroxybutyl)-3-ethyl-imidazoles , 1-(4-hydroxybutyl)-3-propyl group-imidazoles , 1-(4-hydroxybutyl)-3-butyl-imidazoles , 1, two (1-the hydroxymethyl)-imidazoles of 3-, 1, two (2-the hydroxyethyl)-imidazoles of 3-, 1, two (3-the hydroxypropyl)-imidazoles of 3-, 1, two (4-the hydroxybutyl)-imidazoles of 3-, 1-(2-hydroxyethyl)-3-(1-hydroxymethyl)-imidazoles , 1-(2-hydroxyethyl)-3-(3-hydroxypropyl)-imidazoles , 1-(2-hydroxyethyl)-3-(4-hydroxybutyl)-imidazoles , 1-(3-hydroxypropyl)-3-(1-hydroxymethyl)-imidazoles , 1-(3-hydroxypropyl)-3-(2-hydroxyethyl)-imidazoles , 1-(3-hydroxypropyl)-3-(4-hydroxybutyl)-imidazoles , 1-(4-hydroxybutyl)-3-(1-hydroxymethyl)-imidazoles , 1-(4-hydroxybutyl)-3-(2-hydroxyethyl)-imidazoles or 1-(4-hydroxybutyl)-3-(3-hydroxypropyl)-imidazoles .
- 5. one or multinomial method among the claim 1-4 is characterized in that, have dissolved tantalum ion or cupric ion in described ion type liquid.
- 6. the method for claim 5 is characterized in that, described tantalum ion or cupric ion produce by anodic oxidation.
- 7. the method for claim 5 is characterized in that, described tantalum ion or cupric ion produce by dissolving tantalum salt or mantoquita.
- 8. one or heterogenetic method among the claim 1-7 is characterized in that, for electrochemical deposition of tantalum, contain alkaline metal fluoride cpd or alkaline-earth metal fluoride in ion type liquid.
- 9. the method for claim 8 is characterized in that, described alkaline metal fluoride cpd or alkaline-earth metal fluoride are 2: 1 to 1: 1 to the ratio of tantalum salt.
- 10. one or multinomial method among the claim 1-9 is characterized in that, described base material is nonmetal, semi-metal, metal, metal alloy or conduction and/or metallized ceramic or conduction and/or metallized plastic.
- 11. one or multinomial method is characterized in that among the claim 1-10, wash ion type liquid off with organic solvent after deposition of tantalum and/or copper, perhaps water is washed ion type liquid off under the situation of copper.
- 12. be used for the deposition of tantalum and the electrochemical method of deposited copper subsequently, wherein at first by one of claim 2-4 in ion type liquid on structurized silicon deposition of tantalum, wherein said ion type liquid contains at least a tetraalkylammonium cation, tetraalkyl positively charged ion, 1,1-dialkyl group tetramethyleneimine positively charged ion, 1-hydroxyalkyl-1-alkyl pyrrolidine positively charged ion, 1-hydroxyalkyl-3-alkyl imidazole positively charged ion or 1, two (hydroxyalkyl) imidazoles positively charged ions of 3-, wherein alkyl in the hydroxyalkyl or alkylidene chain all can contain 1-10 carbon atom independently of one another, under electrochemical voltage control condition, replace pure ion type liquid, under the voltage control condition, fill and deposited copper then with the ion type liquid of copper ions with the ion type liquid that contains tantalum ion.
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| DE102004059520A DE102004059520A1 (en) | 2004-12-10 | 2004-12-10 | Electrochemical deposition of tantalum and / or copper in ionic liquids |
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| EP (1) | EP1831433A2 (en) |
| JP (1) | JP2008523242A (en) |
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- 2004-12-10 DE DE102004059520A patent/DE102004059520A1/en not_active Withdrawn
-
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- 2005-11-15 CN CNA2005800425161A patent/CN101076617A/en active Pending
- 2005-11-15 JP JP2007544757A patent/JP2008523242A/en active Pending
- 2005-11-15 KR KR1020077012973A patent/KR20070085936A/en not_active Application Discontinuation
- 2005-11-15 WO PCT/EP2005/012180 patent/WO2006061081A2/en active Application Filing
- 2005-11-15 CA CA002590080A patent/CA2590080A1/en not_active Abandoned
- 2005-11-15 RU RU2007125776/02A patent/RU2007125776A/en not_active Application Discontinuation
- 2005-11-15 US US11/721,277 patent/US20090242414A1/en not_active Abandoned
- 2005-11-15 EP EP05813986A patent/EP1831433A2/en not_active Withdrawn
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2006061081A2 (en) | 2006-06-15 |
| JP2008523242A (en) | 2008-07-03 |
| WO2006061081A3 (en) | 2007-08-02 |
| TW200626755A (en) | 2006-08-01 |
| EP1831433A2 (en) | 2007-09-12 |
| DE102004059520A1 (en) | 2006-06-14 |
| RU2007125776A (en) | 2009-01-20 |
| KR20070085936A (en) | 2007-08-27 |
| CA2590080A1 (en) | 2006-06-15 |
| US20090242414A1 (en) | 2009-10-01 |
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