CN101069163A - 存储器***以及写入非易失性半导体存储器中的方法 - Google Patents
存储器***以及写入非易失性半导体存储器中的方法 Download PDFInfo
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- CN101069163A CN101069163A CNA2006800013096A CN200680001309A CN101069163A CN 101069163 A CN101069163 A CN 101069163A CN A2006800013096 A CNA2006800013096 A CN A2006800013096A CN 200680001309 A CN200680001309 A CN 200680001309A CN 101069163 A CN101069163 A CN 101069163A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
- Memory System (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP283388/2005 | 2005-09-29 | ||
JP2005283388A JP4751163B2 (ja) | 2005-09-29 | 2005-09-29 | メモリシステム |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101069163A true CN101069163A (zh) | 2007-11-07 |
CN100527097C CN100527097C (zh) | 2009-08-12 |
Family
ID=37899914
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006800013096A Active CN100527097C (zh) | 2005-09-29 | 2006-09-27 | 存储器***以及写入非易失性半导体存储器中的方法 |
Country Status (6)
Country | Link |
---|---|
US (3) | US7872922B2 (zh) |
JP (1) | JP4751163B2 (zh) |
KR (1) | KR100899242B1 (zh) |
CN (1) | CN100527097C (zh) |
TW (1) | TWI316207B (zh) |
WO (1) | WO2007037507A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102279820A (zh) * | 2011-08-24 | 2011-12-14 | 四川和芯微电子股份有限公司 | 基于spi接口的数据存储装置及控制方法 |
CN107818808A (zh) * | 2016-09-14 | 2018-03-20 | 群联电子股份有限公司 | 数据写入方法、存储器控制电路单元与存储器存储装置 |
CN108292519A (zh) * | 2015-12-22 | 2018-07-17 | 桑迪士克科技有限责任公司 | 用于非易失性存储器的子块模式 |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7702846B2 (en) * | 2005-03-15 | 2010-04-20 | Panasonic Corporation | Memory controller, nonvolatile storage device, nonvolatile storage system, and data writing method |
JP4356782B2 (ja) * | 2007-09-12 | 2009-11-04 | ソニー株式会社 | メモリ装置、メモリ制御方法、およびプログラム |
US8429329B2 (en) * | 2007-10-17 | 2013-04-23 | Micron Technology, Inc. | Serial interface NAND |
US7814276B2 (en) * | 2007-11-20 | 2010-10-12 | Solid State System Co., Ltd. | Data cache architecture and cache algorithm used therein |
TWI368223B (en) * | 2007-12-07 | 2012-07-11 | Phison Electronics Corp | Flash memory data writing method and controller using the same |
KR101067457B1 (ko) * | 2008-03-01 | 2011-09-27 | 가부시끼가이샤 도시바 | 메모리 시스템 |
JP5032371B2 (ja) | 2008-03-01 | 2012-09-26 | 株式会社東芝 | メモリシステム |
JP4558054B2 (ja) * | 2008-03-11 | 2010-10-06 | 株式会社東芝 | メモリシステム |
TWI399651B (zh) * | 2008-09-12 | 2013-06-21 | Communication protocol method and system for input / output device | |
US8438325B2 (en) * | 2008-10-09 | 2013-05-07 | Cadence Design Systems, Inc. | Method and apparatus for improving small write performance in a non-volatile memory |
TWI413984B (zh) | 2008-10-16 | 2013-11-01 | Silicon Motion Inc | 快閃記憶體裝置以及資料更新方法 |
JP2010152778A (ja) * | 2008-12-26 | 2010-07-08 | Hitachi Ulsi Systems Co Ltd | 半導体記憶装置 |
US8724401B2 (en) * | 2009-09-29 | 2014-05-13 | Seagate Technology Llc | Data stripes and addressing for flash memory devices |
EP2544092A4 (en) * | 2010-03-04 | 2014-03-19 | Nec Corp | STORAGE DEVICE |
JP4818453B1 (ja) * | 2010-07-30 | 2011-11-16 | 株式会社東芝 | 電子機器およびデータ読み出し方法 |
JP2012133416A (ja) * | 2010-12-17 | 2012-07-12 | Toshiba Corp | メモリシステム |
US9076528B2 (en) * | 2011-05-31 | 2015-07-07 | Micron Technology, Inc. | Apparatus including memory management control circuitry and related methods for allocation of a write block cluster |
US9298606B2 (en) | 2011-09-30 | 2016-03-29 | Intel Corporation | Statistical wear leveling for non-volatile system memory |
US9305112B2 (en) * | 2012-09-14 | 2016-04-05 | International Business Machines Corporation | Select pages implementing leaf nodes and internal nodes of a data set index for reuse |
CN104008069B (zh) * | 2013-02-22 | 2018-06-15 | 中兴通讯股份有限公司 | 一种数据保护方法、装置及设备 |
EP3333853A1 (en) * | 2013-03-07 | 2018-06-13 | Charles I. Peddle | High speed flash controllers |
US10032493B2 (en) | 2015-01-07 | 2018-07-24 | Micron Technology, Inc. | Longest element length determination in memory |
JP7109949B2 (ja) * | 2018-03-23 | 2022-08-01 | キオクシア株式会社 | メモリシステム及びメモリシステムの制御方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5388083A (en) * | 1993-03-26 | 1995-02-07 | Cirrus Logic, Inc. | Flash memory mass storage architecture |
JP2001306393A (ja) | 2000-04-20 | 2001-11-02 | Mitsubishi Electric Corp | 記憶装置 |
JP2003233993A (ja) * | 2002-02-08 | 2003-08-22 | Matsushita Electric Ind Co Ltd | 不揮発性記憶装置の書き換え方法 |
JP3699942B2 (ja) | 2002-03-25 | 2005-09-28 | 株式会社東芝 | メモリ管理方式およびメモリ管理装置 |
JP2004086991A (ja) | 2002-08-27 | 2004-03-18 | Renesas Technology Corp | 不揮発性記憶装置 |
US7039788B1 (en) | 2002-10-28 | 2006-05-02 | Sandisk Corporation | Method and apparatus for splitting a logical block |
US7174440B2 (en) * | 2002-10-28 | 2007-02-06 | Sandisk Corporation | Method and apparatus for performing block caching in a non-volatile memory system |
JP4218406B2 (ja) * | 2003-04-25 | 2009-02-04 | 富士フイルム株式会社 | 情報記録再生方法 |
TW200504577A (en) * | 2003-07-16 | 2005-02-01 | Matsushita Electric Ind Co Ltd | Management method for data storage in data recording medium, and information processing device using the same |
US7139864B2 (en) | 2003-12-30 | 2006-11-21 | Sandisk Corporation | Non-volatile memory and method with block management system |
WO2005066792A2 (en) * | 2003-12-30 | 2005-07-21 | Sandisk Corporation | Non-volatile memory and method with memory planes alignment |
WO2005106673A1 (ja) * | 2004-04-28 | 2005-11-10 | Matsushita Electric Industrial Co., Ltd. | 不揮発性記憶装置及びデータ書込み方法 |
JP4157501B2 (ja) | 2004-06-30 | 2008-10-01 | 株式会社東芝 | 記憶装置 |
JP4561246B2 (ja) * | 2004-08-31 | 2010-10-13 | ソニー株式会社 | メモリ装置 |
JP4192129B2 (ja) | 2004-09-13 | 2008-12-03 | 株式会社東芝 | メモリ管理装置 |
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2005
- 2005-09-29 JP JP2005283388A patent/JP4751163B2/ja active Active
-
2006
- 2006-09-27 WO PCT/JP2006/319828 patent/WO2007037507A1/en active Application Filing
- 2006-09-27 CN CNB2006800013096A patent/CN100527097C/zh active Active
- 2006-09-27 KR KR1020077012008A patent/KR100899242B1/ko active IP Right Grant
- 2006-09-29 TW TW095136289A patent/TWI316207B/zh active
-
2007
- 2007-06-05 US US11/758,035 patent/US7872922B2/en active Active
-
2010
- 2010-12-14 US US12/967,769 patent/US8130557B2/en active Active
-
2012
- 2012-02-08 US US13/368,693 patent/US8310896B2/en active Active
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102279820A (zh) * | 2011-08-24 | 2011-12-14 | 四川和芯微电子股份有限公司 | 基于spi接口的数据存储装置及控制方法 |
CN108292519A (zh) * | 2015-12-22 | 2018-07-17 | 桑迪士克科技有限责任公司 | 用于非易失性存储器的子块模式 |
CN108292519B (zh) * | 2015-12-22 | 2021-10-22 | 桑迪士克科技有限责任公司 | 用于非易失性存储器的子块模式 |
CN107818808A (zh) * | 2016-09-14 | 2018-03-20 | 群联电子股份有限公司 | 数据写入方法、存储器控制电路单元与存储器存储装置 |
CN107818808B (zh) * | 2016-09-14 | 2023-09-12 | 群联电子股份有限公司 | 数据写入方法、存储器控制电路单元与存储器存储装置 |
Also Published As
Publication number | Publication date |
---|---|
KR100899242B1 (ko) | 2009-05-27 |
US20120144100A1 (en) | 2012-06-07 |
TW200721016A (en) | 2007-06-01 |
US8310896B2 (en) | 2012-11-13 |
CN100527097C (zh) | 2009-08-12 |
JP2007094764A (ja) | 2007-04-12 |
TWI316207B (en) | 2009-10-21 |
US20070245181A1 (en) | 2007-10-18 |
KR20070085481A (ko) | 2007-08-27 |
WO2007037507A9 (en) | 2007-05-24 |
US8130557B2 (en) | 2012-03-06 |
US7872922B2 (en) | 2011-01-18 |
JP4751163B2 (ja) | 2011-08-17 |
US20110087831A1 (en) | 2011-04-14 |
WO2007037507A1 (en) | 2007-04-05 |
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Effective date of registration: 20170807 Address after: Tokyo, Japan Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Patentee before: Toshiba Corp. |
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TR01 | Transfer of patent right | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: Kaixia Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. Address after: Tokyo, Japan Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Patentee before: Japanese businessman Panjaya Co.,Ltd. |
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Effective date of registration: 20211022 Address after: Tokyo, Japan Patentee after: Japanese businessman Panjaya Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. |
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