CN101068038A - 在下电极上具有缓冲层的可变电阻存储器件 - Google Patents
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Abstract
本发明提供一种包括可变电阻材料的非易失性存储器件。该非易失性存储器件包括:下电极;形成在该下电极上的缓冲层,该缓冲层由氧化物构成;形成在该缓冲层上的氧化物层,该氧化物层具有可变电阻特性;以及形成在该氧化物层上的上电极。
Description
技术领域
本发明涉及非易失性存储器件,更特别地,涉及非易失性可变电阻存储器件,其在包括具有可变电阻特性的过渡金属氧化物的存储器件的下电极上采用缓冲层,从而导致复位电流(reset current)减小。
背景技术
已经进行了许多努力来研发具有增大的每单位面积存储单元数,即增大的集成密度的半导体器件,且该半导体器件可以以低功耗高速运行。
通常,半导体存储器件包括通过电路连接的多个存储单元。在用作一般半导体存储器件的动态随机存取存储器(DRAM)中,单位存储单元通常包括一个开关和一个电容器。DRAM具有高集成密度和高运行速度的优点。但是,问题在于当切断电源时,丢失其所存储的所有数据。
在非易失性存储器件例如闪存器件中,即使切断电源,仍然保持所存储的全部数据。与易失性存储器不同,闪存具有非易失性特点,但其缺点在于相较于DRAM,其具有低集成密度和低运行速度。
目前研究较多的非易失性存储器件可包括磁随机存取存储器(MRAM)、铁电随机存取存储器(FRAM)、相变随机存取存储器(PRAM)、电阻随机存取存储器(RRAM)等。
诸如上述RRAM的非易失性存储器利用过渡金属氧化物的电阻根据施加到该过渡金属氧化物的电压而变化的特性(可变电阻特性)。
图1A示出可变电阻RAM(RRAM)的一般结构。使用过渡金属氧化物(TMO)作为可变电阻材料的RRAM具有开关特性,使其能用作存储器。
参考图1A,形成下电极10、氧化物层12和上电极14。下电极10和上电极14通常由导电材料构成,一般为金属,氧化物层12由具有可变电阻特性的过渡金属氧化物构成。过渡金属氧化物的特别示例包括ZnO、TiO2、Nb2O5、ZrO2、NiO等。
图1B是示出图1A所示的常规非易失性可变电阻存储器件的操作特性的曲线图。下电极由具有约20nm厚度的Ru构成,在下电极上形成氧化物层。氧化物层由具有约50nm厚度的NiO构成。在氧化物层上形成上电极且上电极由具有约20nm厚度的Ru构成。然后,施加电压并测量电流。
参考图1B,当第一开关循环中施加约0.7V的电压时,复位电流约为3mA。但是,当进行了50次开关操作循环时,复位电流大大增加至约50mA。由此得知,当重复进行开关操作时,氧化物层12的电阻状态连续改变。结果,操作电压增大且复位电压增大,其导致存储器件可靠性下降的问题。因此,需要研发具有稳定操作特性的存储器件。
发明内容
本发明提供一种非易失性存储器件,通过在下电极和氧化物层之间采用缓冲层,尽管重复开关操作,该存储器件仍能表现出稳定的复位电流。
根据本发明的一个方面,提供一种包括可变电阻材料的非易失性存储器件,该存储器件包括:下电极;形成在该下电极上的缓冲层,该缓冲层由氧化物构成;形成在该缓冲层上的氧化物层,该氧化物层具有可变电阻特性;以及形成在该氧化物层上的上电极。
该缓冲层的功函数可以高于该下电极的功函数。
该上电极的功函数可以高于该氧化物层的功函数。
该下电极可以由具有低于5.0eV的功函数的材料构成。
该下电极可以由W、Ta、Cu、Hf、Mo、Sr、Ag、In或Cr构成。
该缓冲层可以由具有高于5.0eV的功函数的材料构成。
该缓冲层可以由Ru氧化物、Ir氧化物、Cu氧化物、Mn氧化物或Ta氧化物构成。
该氧化物层可以由具有可变电阻特性的p型过渡金属氧化物构成。
该氧化物层可以由Ni氧化物或Cu氧化物构成。
该上电极可以由选自Ru、Rh、Co、Pd、Ni、Re、Pt、Ru-Ta合金、Pt-Hf合金、Pt-Ti合金、Co-Ni合金或Ni-Ta合金的材料,或这些材料的合金构成。
附图说明
通过参照附图详细描述其示例性实施例,本发明的上述和其他特征和优点将变得更加明显,附图中:
图1A是示出常规非易失性可变电阻存储器件的视图;
图1B是示出常规非易失性可变电阻存储器件的操作特性的图示;
图2是示出根据本发明一实施例的具有形成在下电极上的缓冲层的可变电阻存储器件的视图;
图3是曲线图,示出电压-电流(V-I)特性以说明可变电阻存储器件的操作原理;
图4A是示出根据本发明一实施例具有形成在Ru下电极上的缓冲层的可变电阻存储器件中根据开关循环的阈值电压的图示;
图4B和4C是示出根据本发明一实施例具有形成在Ru下电极上的缓冲层的可变电阻存储器件中根据开关循环的电流和电阻的图示;
图5A是示出根据本发明一实施例具有形成在W下电极上的缓冲层的可变电阻存储器件中根据开关循环的阈值电压的图示;
图5B和5C是示出根据本发明一实施例具有形成在W下电极上的缓冲层的可变电阻存储器件中根据开关循环的电流和电阻的图示。
具体实施方式
下文中,将参考附图详细描述根据本发明一实施例的可变电阻存储器件。在图中,为清楚起见放大了层的厚度和区域。
图2是示出根据本发明一实施例的可变电阻存储器件的视图。参考图2,根据本发明一实施例的可变电阻存储器件包括下电极20和依次形成在下电极上的缓冲层22、氧化物层24和上电极26。
下电极20可优选由具有低于5.0eV的功函数的材料构成,例如W、Ta、Cu、Hf、Mo、Sr、Ag、In或Cr。缓冲层22优选由具有比下电极20高的功函数的n型氧化物构成,例如,n型氧化物可以是Ru氧化物、Ir氧化物、Cu氧化物、Mn氧化物或Ta氧化物。在金属和n型半导体材料之间的结界面处形成肖特基结或欧姆接触。当缓冲层22由具有比下电极20高的功函数的n型氧化物构成时,在下电极20和缓冲层22之间形成欧姆接触结构。
氧化物层24优选由具有可变电阻特性的过渡金属氧化物构成,特别地,可以由p型氧化物构成,例如Ni氧化物或Cu氧化物。上电极26优选由具有比氧化物层24高的功函数的材料构成。例如,当氧化物层24由NiO构成时,由于NiO具有约4.2eV的功函数,所以上电极26优选由具有高于4.2eV的功函数的材料构成。例如,上电极26可以由选自Ru、Rh、Co、Pd、Ni、Re、Pt、Ru-Ta合金、Pt-Hf合金、Pt-Ti合金、Co-Ni合金或Ni-Ta合金的材料,或者这些材料的合金构成。在金属和p型半导体材料之间的结界面处形成肖特基结或欧姆接触。如上所述,当上电极26具有比氧化物层24高的功函数时,在上电极26和氧化物层24之间形成欧姆接触结构。
结果,根据本发明一实施例的可变电阻存储器件的特征在于在下电极20和缓冲层22之间以及在氧化物层24和上电极26之间形成欧姆接触结构。当缓冲层22由n型氧化物构成且氧化物层24由p型氧化物构成时,本发明的可变电阻存储器件包括二极管结构。
图2示出根据本发明一实施例的可变电阻存储器件的仅单元器件,但是在应用中,可以沿第一方向形成多个下电极20,沿与第一方向交叉的第二方向形成多个上电极26,缓冲层22和氧化物层24可以形成在下电极20和上电极26彼此交叉的部分,由此形成交叉点(cross-point)型结构。由于不需要单独的开关器件,因此可以大大提高集成密度。
如上所述,根据本发明一实施例的包括可变电阻材料的非易失性存储器件可以利用溅射通过PVD、原子层沉积(ALD)或CVD工艺来容易地制造。
图3是示出可变电阻存储器件的操作原理的图示。在图3中,水平轴表示施加到可变电阻存储器件的下电极20和上电极26之间的电压,垂直轴表示流过氧化物层24的电流。参考图3,当电压从0V逐渐增大时,电流沿曲线G1与施加的电压成比例地增大。但是,当施加电压V1或更高电压时,电流由于电阻的突然增大而减小。当施加V1至V2范围内的电压时,电流沿曲线G2增大。当施加电压V2(V2>V1)或更高电压时,电流由于电阻的突然减小而增大且电流遵循曲线G1。这里,曲线G1的状态定义为“开”,曲线G2的状态定义为“关”。此外,电压V1定义为置位电压,电压V2定义为复位电压。
同时,当施加高于V1的电压时存储器件的电特性影响施加低于V1的电压时显示的电特性,下面将对其进行详细描述。首先,将V1至V2范围内的电压施加到存储器件之后,当再次施加低于V1的电压时,所测量的电流遵循沿曲线G2的电流。同时,在将高于V2的电压施加到存储器件之后,且当再次施加低于V1的电压时,所测量的电流遵循沿图3的曲线G1的电流(这里,V3未在图3中示出)。由此可知,存储器件的电特性受高于V1的施加电压(在V1~V2范围内或高于V2)的影响。由以上结果可知,使用过渡金属氧化物的非易失性存储器件可以采用表现出电阻变化的多层结构。例如,当施加图3中V1~V2范围内的电压时存储器件的状态定义为“0”,当施加高于V2的电压来记录数据时存储器件的状态定义为“1”。当读取数据时,施加低于V1的电压来测量流过氧化物层的电流,从而检测记录在存储器件中的数据是处于状态“0”还是处于状态“1”。这里,状态“1”和“0”的指定可选择性地确定。
图4A至4C是示出可变电阻存储器件的操作特性的图示,该可变电阻存储器件中在Ru下电极(20nm)上形成Ru氧化物以形成缓冲层(20nm),并在缓冲层上形成NiO氧化物层(50nm)和Ru上电极(20nm)。图4A示出当进行500次开关操作循环时的阈值电压。当进行250次或更少的开关操作循环时,置位电压或多或少保持200次或更多循环次数时的常量,且复位电压约为0.5V,其保持恒定。图4B示出当开关操作的循环数量为500时的置位电流和复位电流。随着开关操作循环数量的增加,复位电流逐渐增大,但在约10mA处保持恒定,与常规开关器件中50mA的复位电流相比大大减小。图4C是示出当开关操作的循环数量为500时处于“开”状态和“关”状态的电阻的图示。参考图4C,表明随着开关操作循环数量的增加,显示出稳定的电阻特性。虽然未在图中示出,但是对于约1000次开关操作显示出非常稳定的特性。与图1B所示的常规可变电阻存储器件相比,复位电流大大降低,且开关操作的稳定性大大改善。
图5A至5C是示出可变电阻存储器件的操作特性的图示,该可变电阻存储器件中在W下电极(20nm)上形成Ru氧化物以形成缓冲层(20nm),并在缓冲层上形成NiO氧化物层(50nm)和Ru上电极(20nm)。图5A示出当开关操作的循环数量为250时的阈值电压,可知置位电压依赖于开关操作次数或多或少保持恒定,且复位电压也保持恒定。图5B是示出当开关操作的循环数量为250时的置位电流和复位电流的图示。参考图5B,复位电流通常落在1至3mA范围内,与开关操作的循环数量无关。由此结果得知,与常规开关器件中50mA的复位电流相比,该开关器件的复位电流大大减小。图5C是示出当开关操作的循环数量为250时处于“开”状态和“关”状态的电阻的图示。参考图5C,“开”状态和“关”状态的电阻显示出非常稳定的特性,与开关操作的循环数量无关。
根据本发明,该非易失性存储器件具有稳定的开关特性和简单的结构,并且作为交叉点型存储器件,其具有高集成度的优点。而且,该非易失性存储器件通过在上电极和存储节点之间形成缓冲层而提供了稳定的操作特性。
虽然参照其示例性实施例特别显示和描述了本发明,但是本领域技术人员将理解,在不偏离所附权利要求定义的本发明的思想和范围的情况下,可进行形式和细节上的各种变化。
Claims (10)
1.一种包括可变电阻材料的非易失性存储器件,该存储器件包括:
下电极;
形成在该下电极上的缓冲层,该缓冲层由氧化物构成;
形成在该缓冲层上的氧化物层,该氧化物层具有可变电阻特性;以及
形成在该氧化物层上的上电极。
2.根据权利要求1的可变电阻存储器件,其中该缓冲层的功函数高于该下电极的功函数。
3.根据权利要求1的可变电阻存储器件,其中该上电极的功函数高于该氧化物层的功函数。
4.根据权利要求1的可变电阻存储器件,其中该下电极由具有低于5.0eV的功函数的材料构成。
5.根据权利要求4的可变电阻存储器件,其中该下电极由W、Ta、Cu、Hf、Mo、Sr、Ag、In或Cr构成。
6.根据权利要求1的可变电阻存储器件,其中该缓冲层由具有高于5.0eV的功函数的材料构成。
7.根据权利要求6的可变电阻存储器件,其中该缓冲层由Ru氧化物、Ir氧化物、Cu氧化物、Mn氧化物或Ta氧化物构成。
8.根据权利要求1的可变电阻存储器件,其中该氧化物层由具有可变电阻特性的p型过渡金属氧化物构成。
9.根据权利要求8的可变电阻存储器件,其中该氧化物层由Ni氧化物或Cu氧化物构成。
10.根据权利要求1的可变电阻存储器件,其中该上电极由选自Ru、Rh、Co、Pd、Ni、Re、Pt、Ru-Ta合金、Pt-Hf合金、Pt-Ti合金、Co-Ni合金或Ni-Ta合金的材料,或者这些材料的合金构成。
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CN102254803A (zh) * | 2011-08-04 | 2011-11-23 | 江苏畅微电子科技有限公司 | 电阻型存储器的制备方法 |
CN102254803B (zh) * | 2011-08-04 | 2013-05-01 | 江苏畅微电子科技有限公司 | 电阻型存储器的制备方法 |
CN105378959A (zh) * | 2013-03-03 | 2016-03-02 | Adesto技术公司 | 可编程的阻抗储存元件和相应的方法 |
CN103824938A (zh) * | 2014-03-03 | 2014-05-28 | 南京大学 | 一种阻变存储器结构及其制备方法 |
CN105552219A (zh) * | 2015-12-10 | 2016-05-04 | 上海交通大学 | 具有自整流特性的rram存储单元结构及其制备方法 |
CN105552219B (zh) * | 2015-12-10 | 2019-02-01 | 上海交通大学 | 具有自整流特性的rram存储单元结构及其制备方法 |
CN109037437A (zh) * | 2017-06-08 | 2018-12-18 | 爱思开海力士有限公司 | 阻变存储器件 |
CN109473547A (zh) * | 2018-10-29 | 2019-03-15 | 江苏师范大学 | 一种柔性突触仿生器件及其制备方法 |
CN109473547B (zh) * | 2018-10-29 | 2022-03-15 | 江苏师范大学 | 一种柔性突触仿生器件及其制备方法 |
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US20070290186A1 (en) | 2007-12-20 |
JP2007300082A (ja) | 2007-11-15 |
US8525142B2 (en) | 2013-09-03 |
CN101068038B (zh) | 2011-05-18 |
KR20070107861A (ko) | 2007-11-08 |
JP4698630B2 (ja) | 2011-06-08 |
KR101239962B1 (ko) | 2013-03-06 |
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