CN101063758A - 图像显示装置及其制造方法 - Google Patents
图像显示装置及其制造方法 Download PDFInfo
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- CN101063758A CN101063758A CNA2007101022224A CN200710102222A CN101063758A CN 101063758 A CN101063758 A CN 101063758A CN A2007101022224 A CNA2007101022224 A CN A2007101022224A CN 200710102222 A CN200710102222 A CN 200710102222A CN 101063758 A CN101063758 A CN 101063758A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006125338A JP5060738B2 (ja) | 2006-04-28 | 2006-04-28 | 画像表示装置 |
JP125338/2006 | 2006-04-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101063758A true CN101063758A (zh) | 2007-10-31 |
CN100543536C CN100543536C (zh) | 2009-09-23 |
Family
ID=38647504
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2007101022224A Active CN100543536C (zh) | 2006-04-28 | 2007-04-27 | 图像显示装置及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7550772B2 (zh) |
JP (1) | JP5060738B2 (zh) |
CN (1) | CN100543536C (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101789398A (zh) * | 2010-03-09 | 2010-07-28 | 友达光电股份有限公司 | 半导体元件的制造方法 |
CN101794049A (zh) * | 2009-01-30 | 2010-08-04 | 三星移动显示器株式会社 | 平板显示装置及其制造方法 |
CN101997007A (zh) * | 2009-08-07 | 2011-03-30 | 株式会社半导体能源研究所 | 半导体装置及制造半导体装置的方法 |
CN105408813A (zh) * | 2013-08-26 | 2016-03-16 | 苹果公司 | 具有硅薄膜晶体管和半导体氧化物薄膜晶体管的显示器 |
US10032841B2 (en) | 2014-09-24 | 2018-07-24 | Apple Inc. | Silicon and semiconducting oxide thin-film transistor displays |
US10714009B2 (en) | 2015-12-04 | 2020-07-14 | Apple Inc. | Display with light-emitting diodes |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5090708B2 (ja) * | 2006-10-20 | 2012-12-05 | 株式会社ジャパンディスプレイイースト | 画像表示装置とその製造方法 |
KR100908236B1 (ko) | 2008-04-24 | 2009-07-20 | 삼성모바일디스플레이주식회사 | 유기 발광 디스플레이 장치 및 그 제조방법 |
KR100958640B1 (ko) * | 2008-06-09 | 2010-05-20 | 삼성모바일디스플레이주식회사 | 커패시터와 박막 트랜지스터를 갖는 기판, 이를 구비한평판 디스플레이 장치 및 상기 커패시터와 박막트랜지스터를 갖는 기판의 제조방법 |
KR101540341B1 (ko) * | 2008-10-17 | 2015-07-30 | 삼성전자주식회사 | 패널 구조체, 패널 구조체를 포함하는 표시장치 및 이들의 제조방법 |
US20100224880A1 (en) * | 2009-03-05 | 2010-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
CN101957530B (zh) * | 2009-07-17 | 2013-07-24 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板及其制造方法 |
JP5642447B2 (ja) * | 2009-08-07 | 2014-12-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP5663231B2 (ja) | 2009-08-07 | 2015-02-04 | 株式会社半導体エネルギー研究所 | 発光装置 |
TWI596741B (zh) | 2009-08-07 | 2017-08-21 | 半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
US8115883B2 (en) | 2009-08-27 | 2012-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
WO2011027702A1 (en) | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing the same |
WO2011043170A1 (en) * | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR20170143023A (ko) * | 2009-10-21 | 2017-12-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제작방법 |
KR101117642B1 (ko) | 2009-11-16 | 2012-03-05 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR101048987B1 (ko) * | 2009-12-10 | 2011-07-12 | 삼성모바일디스플레이주식회사 | 평판 표시 장치 및 그의 제조 방법 |
WO2011070901A1 (en) * | 2009-12-11 | 2011-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR101692954B1 (ko) * | 2010-05-17 | 2017-01-05 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치 및 그 제조 방법 |
JP5714973B2 (ja) | 2010-05-21 | 2015-05-07 | 株式会社半導体エネルギー研究所 | 半導体装置 |
WO2011148424A1 (ja) * | 2010-05-27 | 2011-12-01 | パナソニック株式会社 | 表示装置用薄膜半導体装置、表示装置及び表示装置用薄膜半導体装置の製造方法 |
KR101193197B1 (ko) * | 2010-07-07 | 2012-10-19 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
US8558960B2 (en) | 2010-09-13 | 2013-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
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Also Published As
Publication number | Publication date |
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JP5060738B2 (ja) | 2012-10-31 |
US20070252145A1 (en) | 2007-11-01 |
US7550772B2 (en) | 2009-06-23 |
JP2007298649A (ja) | 2007-11-15 |
CN100543536C (zh) | 2009-09-23 |
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