CN101055918A - Contact structure of organic semiconductor part, organic transistor and its making method - Google Patents
Contact structure of organic semiconductor part, organic transistor and its making method Download PDFInfo
- Publication number
- CN101055918A CN101055918A CN 200610103553 CN200610103553A CN101055918A CN 101055918 A CN101055918 A CN 101055918A CN 200610103553 CN200610103553 CN 200610103553 CN 200610103553 A CN200610103553 A CN 200610103553A CN 101055918 A CN101055918 A CN 101055918A
- Authority
- CN
- China
- Prior art keywords
- organic semiconductor
- organic
- otft
- drain
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Thin Film Transistor (AREA)
Abstract
A receiving surface structure of an organic semiconductor element, disposes a decorative layer between the organic semiconductor layer and a conducting layer. The material of the decorative layer is inorganics or organic complexes, to reduce the receiving surface resistance of the organic semiconductor element. Besides, the invention discloses an organic thin film transistor and its manufacturing process, the organic thin film transistor comprising a gate electrode, a dielectric layer, an organic semiconductor layer as well as a source/drain. The decorative layer is formed between the organic semiconductor layer and the source/drain, to reduce the receiving surface resistance of the organic thin film, and the material of the decorative layer includes inorganics or organic complexes. The decorative layer may be applied in organic thin film transistors composed of various geometry forms and different materials.
Description
Technical field
The present invention relates to a kind of semiconductor element and manufacture method thereof, particularly a kind of organic semiconductor device and manufacture method thereof.
Background technology
Because organic semiconductor device (organic semiconductor device) can be produced on soft plastic or the thin metal matrix plate, thus its have in light weight, cost is low, pliability advantage and characteristics such as (flexibility).Wherein, (organic thin-film transistor OTFT) has been subjected to the educational circles of many advanced countries and the attention on the industrial research to OTFT.
In the OTFT manufacturing technology, the material of electrodes such as transistorized source/drain typically uses metal, for example gold, palladium or platinum etc., formed electrode of these metals and organic semi-conductor connect face normally Schottky connect face (Schottky contact), therefore have the bigger face that connects resistance.Connect the bigger problem of face resistance for solving OTFT, have several different methods to be suggested.For example the face that connects of organic semiconductor and metal electrode mix (dope) be exactly wherein a kind of method.Yet organic semiconductor is after mixing, and its stability can reduce usually.In addition, other method is the resilient coating that forms high carrier density between the face that connects of organic semiconductor and metal electrode, the Fermi level of this resilient coating (Fermi Level) is between organic semiconductor and metal electrode, inject organic semi-conductor energy barrier (energy barrier) to reduce electric charge by electrode, yet this kind method can cause the reduction of the ON/OFF of OTFT than (on-off ratio).
The patent No. is US 6,335,539 B1 and US 6,569, the United States Patent (USP) of 707 B2 proposes to form self-assembly monomolecular film (self-assembledmonolayer) to reduce the face that the connects resistance of OTFT on metal electrode with long refining mercaptan (thiol) organic substance.Yet this kind method is only applicable on the formed electrode of a few metal material.In addition, above-mentioned self-assembly monomolecular film is to be formed on the metal electrode in the mode of soaking, and therefore this method can be subjected to the restriction of the geometry forms of OTFT.
Summary of the invention
Purpose of the present invention just provides a kind of contact structure of organic semiconductor device, to solve the bigger problem of the face that connects resistance of known organic semiconductor assembly.
Another object of the present invention just provides a kind of OTFT, to solve the bigger problem of the face that connects resistance of known OTFT.
A further object of the present invention just provides a kind of manufacture method of OTFT, to solve the limited problem of range of application of known technology.
For reaching above-mentioned purpose, the present invention proposes a kind of contact structure of organic semiconductor device, it comprises organic semiconductor layer, conductive layer and decorative layer, and wherein decorative layer is arranged between organic semiconductor layer and the conductive layer, and the material of this decorative layer comprises inorganic matter or organic complex.
The contact structure of the described organic semiconductor device of one of the present invention embodiment, wherein the material of organic semiconductor layer comprises Semiconductor Organic molecule, semiconductor macromolecule or oligomer.
The contact structure of the described organic semiconductor device of one of the present invention embodiment, wherein the material of conductive layer comprises metal, metal oxide or conducting polymer.
The contact structure of the described organic semiconductor device of one of the present invention embodiment, wherein inorganic matter comprises LiF, CsF, LiO
2, LiBO
2, K
2SiO
3, Cs
2CO
3Or Al
2O
3
The contact structure of the described organic semiconductor device of one of the present invention embodiment, wherein organic complex comprises CH
3COOLi, CH
3COONa, CH
3COOK, CH
3COORb, CH
3COOCs or CuPc (copper phthalocyanine, CuPC).
The contact structure of the described organic semiconductor device of one of the present invention embodiment, wherein inorganic matter comprises molybdenum oxide (MoO
3), vanadium oxide (V
2O
5) or tungsten oxide (WO
3).
The contact structure of the described organic semiconductor device of one of the present invention embodiment, wherein inorganic matter comprises germanium (Ge).
The present invention also proposes a kind of OTFT, and it comprises: grid, source/drain, dielectric layer, organic semiconductor layer and at least one decorative layer.Wherein grid and source/drain electric insulation, and dielectric layer is arranged between grid and the source/drain, and organic semiconductor layer is between source/drain, in addition, decorative layer is arranged between organic semiconductor layer and the source/drain, and the material of this decorative layer comprises inorganic matter or organic complex.
The described OTFT of one of the present invention embodiment, wherein the material of grid comprises metal, metal oxide, conducting polymer or the silicon materials through mixing.
The described OTFT of one of the present invention embodiment, wherein the material of source/drain comprises metal, metal oxide, conducting polymer or the silicon materials through mixing.
The described OTFT of one of the present invention embodiment, wherein the material of dielectric layer comprises SiO
2, Si
3N
4, TiO
2, LaO
2, Al
2O
3, polyimides (polyimide), polymethyl methacrylate (polymethylmethacrylate), polyamide (polyamide) or Parylene (parylene).
The described OTFT of one of the present invention embodiment, wherein the material of organic semiconductor layer comprises Semiconductor Organic molecule, semiconductor macromolecule or oligomer.
The described OTFT of one of the present invention embodiment, wherein inorganic matter comprises LiF, CsF, LiO
2, LiBO
2, K
2SiO
3, Cs
2CO
3Or Al
2O
3
The described OTFT of one of the present invention embodiment, wherein organic complex has the form of RM, and R is an organic substance, and M is a metallic element.
The described OTFT of one of the present invention embodiment, wherein organic complex comprises CH
3COOLi, CH
3COONa, CH
3COOK, CH
3COORb, CH
3COOCs or CuPc (copper phthalocyanine, CuPC).
The described OTFT of one of the present invention embodiment, wherein inorganic matter comprises molybdenum oxide (MoO
3), vanadium oxide (V
2O
5) or tungsten oxide (WO
3).
The described OTFT of one of the present invention embodiment, wherein inorganic matter comprises germanium (Ge).
The described OTFT of one of the present invention embodiment, wherein grid is positioned at the source/drain below.
The described OTFT of one of the present invention embodiment, wherein grid is positioned at the source/drain top.
The described OTFT of one of the present invention embodiment also comprises second grid, and second grid is positioned at the source/drain below.
The present invention also proposes a kind of manufacture method of OTFT, the method comprises formation grid, dielectric layer, organic semiconductor layer and source/drain, it is characterized in that: form decorative layer between organic semiconductor layer and source/drain, wherein the material of decorative layer comprises inorganic matter or organic complex.
The manufacture method of the described OTFT of one of the present invention embodiment, the method that wherein forms decorative layer comprise utilizes shadow mask (shadow mask) to carry out depositing operation, or utilizes spin coating process, ink-jetting process or screen printing process.
The manufacture method of the described OTFT of one of the present invention embodiment, the method that wherein forms decorative layer comprise that carrying out depositing operation cooperates photoetching process and etch process again.
The contact structure of organic semiconductor device of the present invention has a decorative layer between organic semiconductor layer and conductive layer, the material of this decorative layer is inorganic matter or organic complex, therefore can reduce the face that the connects resistance of organic semiconductor assembly.
OTFT of the present invention and manufacture method thereof adopt inorganic matter or organic complex as decorative layer, therefore can be applied to the OTFT that different materials constitutes.
OTFT of the present invention and manufacture method thereof, its decorative layer can utilize shadow mask to carry out depositing operation, or utilize spin coating process, ink-jetting process, screen printing process to form, or utilize photoetching process and etch process to form, therefore can be applicable to the OTFT of various geometry forms.
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is the contact structure schematic diagram of organic semiconductor device of the present invention.
Fig. 2 is the structural representation of OTFT of the present invention.
Fig. 3 to Fig. 7 is the structural representation of other form of OTFT of the present invention.
The main element description of symbols
10a, 10b, 10c, 10d, 10e, 10f: OTFT
12: substrate
20,20a: grid
30,30a: dielectric layer
40: organic semiconductor layer
42: the first area
44: second area
50,50a: source electrode
51,51a: drain electrode
55: conductive layer
60,60a: decorative layer
Embodiment
The contact structure of organic semiconductor device
Fig. 1 is the contact structure schematic diagram of organic semiconductor device of the present invention.Please refer to Fig. 1, the contact structure of organic semiconductor device comprises organic semiconductor layer 40, conductive layer 55 and decorative layer 60.This semiconductor element for example is metal-oxide semiconductor (MOS) (metal-oxide-semiconductor, MOS) structural detail, metal-insulator semiconductor (metal-insulator-semiconductor, MIS) structural detail, thin-film transistor (thin-film transistor, TFT) structural detail or OTFT (organic thin-film transistor, OTFT) structural detail.At present embodiment, the material of organic semiconductor layer 40 for example is Semiconductor Organic molecule, semiconductor macromolecule or oligomer.Above-mentioned Semiconductor Organic molecule for example is aphthacene (tetracene), pentacene (pentacene) or phthalocyanine (phthalocyanine).Above-mentioned semiconductor macromolecule for example is polythiophene (polythiophene), poly-fluorenes (polyfluorene), polyphenylene (polyphenylenevinylene) or derivatives thereof, this derivative for example is poly-(3-octyl group) thiophene (poly (3-octyl) thiophene), poly-dioctyl fluorene (poly (dioctylfluorene)) or poly-[2-methoxyl group-5-(2 '-ethyl-own oxygen base)-1,4-] talan (poly[2-methoxy-5-(2 '-ethyl-hexyloxy)-1,4-phenylene vinylene]).Above-mentioned oligomer for example is α-six thiophene (α-sexithiophene).
Please continue with reference to Fig. 1, the material of conductive layer 55 for example is metal, metal oxide or conducting polymer.Above-mentioned metal for example is aluminium, titanium, nickel, copper, gold or chromium.Above-mentioned metal oxide for example is indium tin oxide or indium-zinc oxide.Above-mentioned conducting polymer for example be poly-dioxoethyl thiophene and poly-p styrene sulfonic acid mixture (3,4-polyethylenedioxythiophene:polystyrenesulfonate, PEDOT:PSS) or polyaniline (polyaniline).
In order to reduce the face that the connects resistance of conductive layer 55 and organic semiconductor layer 40, so a decorative layer 60 is set between organic semiconductor layer 40 and the conductive layer 55.Particularly, the material of decorative layer 60 for example is inorganic matter or organic complex, and this inorganic matter for example is lithium fluoride (LiF), cesium fluoride (CsF), lithia (LiO
2), boron oxide lithium (LiBO
2), silica potassium (K
2SiO
3), cesium carbonate (Cs
2CO
3) or aluminium oxide (Al
2O
3) wait inorganic salts.According to another embodiment of the present invention, inorganic matter can also be a transparent metal oxide, and it for example is molybdenum oxide (MoO
3), vanadium oxide (V
2O
5) or tungsten oxide (WO
3).According to another embodiment of the present invention, inorganic matter can also be germanium metal (Ge).On the other hand, the pattern of above-mentioned organic complex for example is RM, and wherein R is an organic substance, and M is a metal.Particularly, R for example is acetate (CH3COO
-), metal for example is lithium (Li), sodium (Na), potassium (K), rubidium (Rb) or caesium (Cs).And the material of organic misfit thing for example is lithium acetate (CH
3COOLi), sodium acetate (CH
3COONa), potassium acetate (CH
3COOK), acetic acid rubidium (CH
3COORb) or cesium acetate (CH
3COOCs) or CuPc (copper phthalocyanine, CuPC).
By increasing decorative layer 60, can promote charge carrier (electronics or hole) and inject the efficient of organic semiconductor layer 40, and then reduce the face that the connects resistance of conductive layer 55 and organic semiconductor layer 40 from conductive layer 55.
OTFT
Fig. 2 is the structural representation of OTFT of the present invention.Please refer to Fig. 2, OTFT 10a comprises grid 20, source electrode 50 and drain electrode 51, dielectric layer 30, organic semiconductor layer 40 and at least one decorative layer 60.The geometry forms of this OTFT 10a is so-called bottom grid pattern, so grid 20 is to be positioned at source electrode 50 and drain electrode 51 belows.Wherein, dielectric layer 30 is arranged at grid 20 and source electrode 50 and drains between 51, makes grid 20 and source electrode 50 and drain electrode 51 electric insulations, and organic semiconductor layer 40 is at source electrode 50 with drain between 51, to form channel semiconductor.In addition, decorative layer 60 is arranged at organic semiconductor layer 40 and source electrode 50 and drains between 51, connects face resistance to reduce source electrode 50 and drain electrode 51 with organic semiconductor layer 40 foldings.It should be noted that in present embodiment the material of this decorative layer 60 for example is inorganic matter or organic complex.
Under general situation, OTFT 10a is formed on the substrate 12, so its manufacture process at first provides substrate 12, and the material of this substrate 12 for example is glass, contain aluminium crystal (sapphire), semiconductor or high molecule plastic.Above-mentioned semiconductor for example is germanium silicide (SiGe) or p type, the silicon material of n type through mixing.Above-mentioned high molecule plastic for example be the polyethylene terephthalate (polyethylene teraphthalate, PET) or Merlon (polycarbonate, PC).
Please continue with reference to Fig. 2, then, form grid 20 on substrate 12, the material of this grid 20 for example is the silicon material of metal, metal oxide (for example being indium tin oxide, indium-zinc oxide), conducting polymer or doping.Wherein, above-mentioned metal for example is aluminium, titanium, nickel, copper, gold or chromium.Above-mentioned conducting polymer for example be poly-dioxoethyl plug fen and poly-p styrene sulfonic acid mixture (3,4-polyethylenedioxythiophene-polystyrenesulfonate, PEDOT:PSS) or polyaniline (polyaniline).Then, form dielectric layer 30 on substrate 12 and gate pole 20, the material of this dielectric layer 30 for example is silica (SiO
2), silicon nitride (Si
3N
4), titanium oxide (TiO
2), lanthana (LaO
2), aluminium oxide (Al
2O
3), polyimides (polyimide), polymethyl methacrylate (polymethylmethacrylate), polyamide (polyamide) or Parylene (parylene).Subsequently, form organic semiconductor layer 40 on dielectric layer 30, the material of this organic semiconductor layer 40 for example is Semiconductor Organic molecule, semiconductor macromolecule or oligomer.Above-mentioned Semiconductor Organic molecule for example is aphthacene (tetracene), pentacene (pentacene) or phthalocyanine (phthalocyanine).Above-mentioned semiconductor macromolecule for example is polythiophene (polythiophene), poly-fluorenes (polyfluorene), polyphenylene (polyphenylenevinylene) or derivatives thereof, this derivative for example is poly-(3-octyl group) thiophene (poly (3-octyl) thiophene), poly-dioctyl fluorene (poly (dioctylfluorene)) or poly-[2-methoxyl group-5-(2 '-ethyl-own oxygen base)-1,4-] talan (poly[2-methoxy-5-(2 '-ethyl-hexyloxy)-1,4-phenylene vinylene]).Above-mentioned oligomer for example is α-six thiophene (α-sexithiophene).
Please continue with reference to Fig. 2, then, form decorative layer 60 on organic semiconductor layer 40.This step can utilize shadow mask (shadow mask) to carry out depositing operation, is covered in the decorative layer 60 of first area 42 and second area 44 with formation, then, forms source electrode 50 and drain 51 on first area 42 and second area 44 with identical shadow mask again.So, decorative layer 60 is formed at organic semiconductor layer 40 and source electrode 50 and drains between 51, therefore can promote charge carrier (electronics or hole) from the source electrode 50 and the efficient of 51 injection organic semiconductor layers 40 that drains, and then reduce the face that the connects resistance of source electrode 50 and drain electrode 51 and organic semiconductor layer 40.In addition, what deserves to be mentioned is, also can carry out arrange in pairs or groups again photoetching process and etch process of depositing operation earlier and form the decorative layer 60 that is covered in first area 42 and second area 44, form source electrode 50 and drain electrode 51 again on decorative layer 60, employed photo etched mask can be used same photo etched mask when wherein forming 51 o'clock employed photo etched masks of source electrode 50 and drain electrode and forming decorative layer 60.And above-mentioned depositing operation can be physical gas-phase deposition or chemical vapor deposition method.Certainly, above-mentioned decorative layer 60 also can utilize spin coating process, ink-jetting process or screen printing process and form.In present embodiment, the material of decorative layer 60 for example is inorganic matter or organic complex, and this inorganic matter for example is LiF, CsF, LiO
2, LiBO
2, K
2SiO
3, Cs
2CO
3Or Al
2O
3Deng inorganic salts.According to another embodiment of the present invention, above-mentioned inorganic matter can also be a transparent metal oxide, and it for example is molybdenum oxide (MoO
3), vanadium oxide (V
2O
5) or tungsten oxide (WO
3).According to another embodiment of the present invention, inorganic matter can also be germanium metal (Ge).On the other hand, the pattern of organic complex for example is RM, and wherein R is an organic substance, and M is a metal.Particularly, the material of this organic complex for example is CH
3COOLi, CH
3COONa, CH
3COOK, CH
3COORb, CH
3COOCs or CuPc (copper phthalocyanine, CuPC).In addition, source electrode 50 for example is the silicon material of metal, metal oxide (for example being indium tin oxide, indium-zinc oxide), conducting polymer or doping with the material of drain electrode 51.
It should be noted that first area 42 can adopt different materials with the decorative layer 60 of second area 44, for example the decorative layer 60 of first area 42 adopts LiF, and the decorative layer 60 of second area 44 adopts CsF.In addition, also can form a plurality of decorative layers 60 in organic semiconductor layer 40 and source electrode 50 with drain between 51, to obtain better effect.In addition, if adopt the material of transparent metal oxide as decorative layer 60, and the grid of OTFT, source electrode and drain electrode be the employing transparent electrode material, can make the thin-film transistor element with high grade of transparency.If the transparent film transistor element application on display (for example being LCD or display of organic electroluminescence), can be increased substantially the aperture opening ratio of display.In addition, if using germanium (Ge) is the material of its decorative layer 60, because of the work function of germanium is 5eV, (4.8～5.1eV) is quite approaching for the work function of itself and organic semiconducting materials pentacene (pentacene), if adopt above-mentioned two kinds of materials respectively as decorative layer when being the material of organic semiconductor layer, can because both work functions near and form nurse contact point difficult to understand (ohmic contact).
OTFT of the present invention is not limited to above-mentioned form.Fig. 3 to Fig. 7 is the structural representation of other form of OTFT of the present invention.Because decorative layer 60 of the present invention can utilize shadow mask to carry out depositing operation and form, or utilize spin coating process, ink-jetting process or screen printing process and form, or utilize photoetching process and etch process to form, therefore can be applicable to the OTFT of following form.
Please refer to Fig. 3, OTFT 10b is formed on the substrate 12, and it comprises grid 20, source electrode 50 and drain electrode 51, dielectric layer 30, organic semiconductor layer 40 and at least one decorative layer 60.The geometry forms of this OTFT 10b also is the bottom grid pattern, so grid 20 is positioned at source electrode 50 and drain electrode 51 belows.Different with the foregoing description is that organic semiconductor layer 40 is positioned at source electrode 50 and drain electrode 51 tops with decorative layer 60.
Please refer to Fig. 4, the geometry forms of this OTFT 10c also is the bottom grid pattern, so grid 20 is positioned at source electrode 50 and drain electrode 51 belows.Different with the foregoing description is that source electrode 50 is not all to be positioned on the same plane with drain electrode 51 electrodes.So, make organic semiconductor layer 40 form vertical channel (vertical channel).
Please refer to Fig. 5, OTFT 10d is formed on the substrate 12, and it comprises grid 20, source electrode 50 and drain electrode 51, dielectric layer 30, organic semiconductor layer 40 and at least one decorative layer 60.The geometry forms of this OTFT 10d is so-called top grid pattern, so grid 20 is positioned at source electrode 50 and drain electrode 51 tops.
Please refer to Fig. 6, OTFT 10e is formed on the substrate 12, and it comprises gate 20, first source electrode 50 and first drain electrode, 51, first dielectric layer 30, organic semiconductor layer 40, the second dielectric layer 30a, the second source electrode 50a and second drain electrode 51a, at least one first decorative layer 60 and at least one the second decorative layer 60a.The geometry forms of this OTFT 10e also is the top grid pattern, so grid 20 is to be positioned at first source electrode 50 and first drain 51 and the first source electrode 50a and the second drain electrode 51a top.Different with the foregoing description is that whole positions are on same plane because first and second source electrode 50,50a and first and second drain electrode 51,51a electrode are not.So, make organic semiconductor layer 40 form vertical channel.
Please refer to Fig. 7, OTFT 10f is formed on the substrate 12, and it comprises first grid 20, source electrode 50 and grid 51, first dielectric layer 30, organic semiconductor layer 40, the second dielectric layer 30a, at least one decorative layer 60 and second grid 20a.The geometry forms of this OTFT 10f is the bigrid pattern.Wherein first grid 20 is positioned at source electrode 50 and drain electrode 51 tops, and second grid 20a is positioned at source electrode 50 and drain electrode 51 belows.
Therefore the present invention can reduce the face that the connects resistance of organic semiconductor device, and can be applied to the organic semiconductor device of different materials because of adopting inorganic matter or organic complex as decorative layer.
Because decorative layer of the present invention can utilize shadow mask to carry out depositing operation, or utilize spin coating process, ink-jetting process, screen printing process to form, or utilize photoetching process and etch process to form, therefore can be applicable to the OTFT of various geometry forms.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any person of ordinary skill in the field; without departing from the spirit and scope of the invention; when can doing a little change and improvement, so the present invention's protection range is as the criterion when looking the claim person of defining.
Claims (23)
1. the contact structure of an organic semiconductor device is characterized in that comprising:
Organic semiconductor layer;
Conductive layer; And
Decorative layer is arranged between organic semiconductor layer and the conductive layer, and the material of decorative layer comprises inorganic matter or organic complex.
2. the contact structure of organic semiconductor device according to claim 1 is characterized in that the material of this organic semiconductor layer comprises Semiconductor Organic molecule, semiconductor macromolecule or oligomer.
3. the contact structure of organic semiconductor device according to claim 1 is characterized in that the material of this conductive layer comprises metal, metal oxide or conducting polymer.
4. the contact structure of organic semiconductor device according to claim 1 is characterized in that this inorganic matter comprises LiF, CsF, LiO
2, LiBO
2, K
2SiO
3, Cs
2CO
3Or Al
2O
3
5. the contact structure of organic semiconductor device according to claim 1 is characterized in that this organic complex comprises CH
3COOLi, CH
3COONa, CH
3COOK, CH
3COORb, CH
3COOCs or CuPc.
6. the contact structure of organic semiconductor device according to claim 1 is characterized in that this inorganic matter comprises molybdenum oxide, vanadium oxide or tungsten oxide.
7. the contact structure of organic semiconductor device according to claim 1 is characterized in that this inorganic matter comprises germanium.
8. OTFT is characterized in that comprising:
Grid and source/drain, this grid can with this source/drain electric insulation;
Dielectric layer is arranged between this grid and this source/drain;
Organic semiconductor layer is between this source/drain;
At least one decorative layer is arranged between this organic semiconductor layer and the source/drain, and the material of decorative layer comprises inorganic matter or organic complex.
9. OTFT according to claim 8 is characterized in that the material of this grid comprises metal, metal oxide, conducting polymer or the silicon materials through mixing.
10. OTFT according to claim 8 is characterized in that the material of this source/drain comprises metal, metal oxide or conducting polymer or the silicon materials through mixing.
11. OTFT according to claim 8 is characterized in that the material of this dielectric layer comprises SiO
2, Si
3N
4, TiO
2, LaO
2, Al
2O
3, polyimides, polymethyl methacrylate, polyamide or Parylene.
12. OTFT according to claim 8 is characterized in that the material of this organic semiconductor layer comprises Semiconductor Organic molecule, semiconductor macromolecule or oligomer.
13. OTFT according to claim 8 is characterized in that this inorganic matter comprises LiF, CsF, LiO
2, LiBO
2, K
2SiO
3, Cs
2CO
3Or Al
2O
3
14. OTFT according to claim 8 is characterized in that this organic complex has the form of RM, R is an organic substance, and M is a metallic element.
15. OTFT according to claim 14 is characterized in that this organic complex comprises CH
3COOLi, CH
3COONa, CH
3COOK, CH
3COORb, CH
3COOCs or CuPc.
16. OTFT according to claim 8 is characterized in that this inorganic matter comprises molybdenum oxide, vanadium oxide or tungsten oxide.
17. OTFT according to claim 8 is characterized in that this inorganic matter comprises germanium.
18. OTFT according to claim 8 is characterized in that this grid is positioned at this source/drain below.
19. OTFT according to claim 8 is characterized in that this grid is positioned at this source/drain top.
20. OTFT according to claim 19 is characterized in that also comprising second grid, this second grid is positioned at this source/drain below.
Form grid, dielectric layer, organic semiconductor layer and source/drain 21. the manufacture method of an OTFT, this method comprise, it is characterized in that:
Form decorative layer between this organic semiconductor layer and this source/drain, wherein the material of this decorative layer comprises inorganic matter or organic complex.
Utilize shadow mask to carry out depositing operation or utilize spin coating process, ink-jetting process or screen printing process 22. the manufacture method of OTFT according to claim 21, the method that it is characterized in that forming this decorative layer comprise.
23. the manufacture method of OTFT according to claim 21, the method that it is characterized in that forming this decorative layer comprises carries out depositing operation, photoetching process and etch process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610103553 CN101055918A (en) | 2005-11-11 | 2006-07-21 | Contact structure of organic semiconductor part, organic transistor and its making method |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200510115954.8 | 2005-11-11 | ||
| CN200510115954 | 2005-11-11 | ||
| CN 200610103553 CN101055918A (en) | 2005-11-11 | 2006-07-21 | Contact structure of organic semiconductor part, organic transistor and its making method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101055918A true CN101055918A (en) | 2007-10-17 |
Family
ID=38795631
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200610103553 Pending CN101055918A (en) | 2005-11-11 | 2006-07-21 | Contact structure of organic semiconductor part, organic transistor and its making method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101055918A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102222767A (en) * | 2011-06-23 | 2011-10-19 | 康佳集团股份有限公司 | Organic thin-film transistor |
| CN102496647A (en) * | 2011-12-28 | 2012-06-13 | 营口联创太阳能科技有限公司 | Amorphous silicon film cell additionally equipped with electrode modification layer and manufacturing method thereof |
| CN102655213A (en) * | 2011-03-02 | 2012-09-05 | 中国科学院微电子研究所 | Semiconductor device structure and preparation method thereof |
| US10014483B2 (en) | 2015-07-28 | 2018-07-03 | Boe Technology Group Co., Ltd. | Organic thin film transistor having patterned interface modification layer, display substrate and display apparatus having the same, and fabricating method thereof |
| CN112820779A (en) * | 2020-12-31 | 2021-05-18 | 上海应用技术大学 | Thin film transistor and preparation method thereof |
-
2006
- 2006-07-21 CN CN 200610103553 patent/CN101055918A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102655213A (en) * | 2011-03-02 | 2012-09-05 | 中国科学院微电子研究所 | Semiconductor device structure and preparation method thereof |
| CN102222767A (en) * | 2011-06-23 | 2011-10-19 | 康佳集团股份有限公司 | Organic thin-film transistor |
| CN102496647A (en) * | 2011-12-28 | 2012-06-13 | 营口联创太阳能科技有限公司 | Amorphous silicon film cell additionally equipped with electrode modification layer and manufacturing method thereof |
| US10014483B2 (en) | 2015-07-28 | 2018-07-03 | Boe Technology Group Co., Ltd. | Organic thin film transistor having patterned interface modification layer, display substrate and display apparatus having the same, and fabricating method thereof |
| CN112820779A (en) * | 2020-12-31 | 2021-05-18 | 上海应用技术大学 | Thin film transistor and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101926016B (en) | Organic thin film transistors, active matrix organic optical devices and methods of making same | |
| JP5638944B2 (en) | Organic thin film transistor | |
| JP5575105B2 (en) | Organic thin film transistor | |
| CN102144312B (en) | Method of making organic thin film transistors using a laser induced thermal transfer printing process | |
| EP2132798B1 (en) | Organic thin film transistors | |
| CN1779990A (en) | Organic thin film transistor and organic electroluminescent device using the same | |
| JP2004087458A (en) | Organic integrated device used for thin film transistor and light emitting diode, and its manufacturing method | |
| CN1855569A (en) | Organic semiconductor device | |
| CN101048871A (en) | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes | |
| CN1716059A (en) | Organic thin film transistor array panel and manufacture method thereof | |
| CN1841808A (en) | Organic thin film transistor and flat display device comprising the same | |
| CN101057347A (en) | Self-aligned process to manufacture organic transistors | |
| CN1808737A (en) | Organic thin film transistor and method of manufacturing the same | |
| CN1992370A (en) | Organic thin film transistor and method for manufacturing the same | |
| CN101075659A (en) | Method for manufacturing film transistor and film transistor and display device | |
| CN1716060A (en) | Organic thin film transistor array panel and manufacture method thereof | |
| CN1743930A (en) | Method for making organic thin film transistor and method for making liquid crystal display using same | |
| CN101055918A (en) | Contact structure of organic semiconductor part, organic transistor and its making method | |
| KR101509420B1 (en) | Organic thin film transistor | |
| CN1742392A (en) | Electronic device | |
| KR20160112030A (en) | Thin-film transistor having dual gate electrode | |
| US20080070343A1 (en) | Methods for forming an organic thin film using solvent effects, organic thin film formed by the method, and organic electronic device comprising organic thin film | |
| JP4684543B2 (en) | Method for producing organic semiconductor layer having molecular arrangement | |
| US20070102697A1 (en) | Junction structure of organic semiconductor device, organic thin film transistor and fabricating method thereof | |
| CN1348222A (en) | Organic film FET and its manufacture |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |