CN101055856B - 用于电子元件的连接设备 - Google Patents

用于电子元件的连接设备 Download PDF

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Publication number
CN101055856B
CN101055856B CN2007100898170A CN200710089817A CN101055856B CN 101055856 B CN101055856 B CN 101055856B CN 2007100898170 A CN2007100898170 A CN 2007100898170A CN 200710089817 A CN200710089817 A CN 200710089817A CN 101055856 B CN101055856 B CN 101055856B
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film
connection device
conductive
layer
main region
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CN101055856A (zh
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古伯·克里斯蒂安
奥古斯汀·卡尔汉兹
斯多克米尔·托马斯
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Semikron GmbH and Co KG
Semikron Elektronik GmbH and Co KG
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Semikron Elektronik GmbH and Co KG
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Abstract

本发明描述了一种用于电子元件与基片间的导电连接的连接设备。在这种情况下，所述连接设备被形成为由至少一个绝缘层和两个导电薄膜构成的薄膜复合物。所述薄膜复合物以各种情况下一个导电薄膜与一个绝缘薄膜交替出现的层结构来形成，其中至少一个导电层被构造，从而形成导电印刷线路。另外，所述薄膜复合物的一个主区域的至少一个导电薄膜包含第一种金属，并具有至少一个薄膜段，该薄膜段具有由第二种金属构成的层，这个层与所述薄膜的厚度相比要薄。

Description

用于电子元件的连接设备
技术领域
本发明描述了一种用于电子元件与至少一个基片间的导电连接的连接设备，其中该连接设备形成为一个薄膜复合物。
背景技术
已知有多种用于电子元件的连接设备。在封装元件的情况下，作为例子，金属连接设备及其通过焊接技术与基片间的连接是已知的，其中在这种情况下基片也被理解为是指印刷电路板的类型。
在未封装的元件的情况下，引线接合连接被广泛用作连接设备。此外，在功率半导体模块领域还已知了位置锁定的连接，作为所谓的压力接触连接。与功率半导体模块类似地，压力接触连接的弹性印刷电路板已知作为连接设备。DE10221970A1公开了一种功率半导体模块，其包括一个这种类型的连接设备，但没有描述其具体结构。
DE10355925A1公开了一种用于功率半导体元件的连接设备，其包括由第一和第二导电薄膜构成的、具有绝缘中间层的薄膜复合物。功率半导体元件通过超声焊接持久且牢固地电连接到第一导电层。在这种情况下，功率半导体元件至基片的导电印刷线路的与电路相一致的模块间连接通过金属接触件来形成，所述金属接触件的厚度被调整为与功率半导体元件的厚度一致。所述接触件以与功率半导体元件相同的方式通过超声焊接被连接到连接设备上。
在这种情况下，用于超声焊接连接到功率半导体元件和接触件的导电薄膜包含具有压纹凸起的铝，因为铝形成了与功率半导体元件的金属化层之间的良好焊接连接，所述金属化层同样包含一个由铝构成的最终层。
这种情况的缺点在于，与所述铝层的焊接连接是不可能实现的，或者只能在非常有限的程度上实现。这里没有公开通过铜构成的相应层的结构，铜具有更高的单位导电率并且是可焊接的，因为该层并不适用于与功率半导体元件的焊接连接。
发明内容
本发明是基于提供一种用于电子元件的连接设备的目的，例如，所述电子元件如未封装的功率半导体元件以及封装后的或未封装的集成电路，其既适合于焊接连接也适合于软焊连接，并且以简单的、可快速生产的灵活方式连接多个元件。
根据本发明该目标通过具有权利要求1所述特征的措施来完成。在从属权利要求中描述了优选的实施例。
本发明的构思是基于、但不限于具有多个元件的智能功率半导体模块的需求，这些元件以不同的方式排列，并以和电路一致的方式被连接。在这种类型的功率半导体模块中，未封装的功率半导体元件彼此连接和/或被连接到它们所设置的基片上的导电印刷线路。此外，控制和辅助连接需要连接到驱动器元件和其他以封装方式或未封装方式设置在功率半导体模块中的电子元件。此外，作为举例，用于温度和/或电流的传感器需要连接到所分配的评估单元上。负载连接及功率半导体元件以及驱动器元件的所有所需的控制和辅助连接的外部连接都被类似地连接。
根据本发明的连接设备被配置为由至少一个绝缘薄膜和两个导电薄膜构成的薄膜复合物。所述薄膜复合物具有层结构，其从一个导电薄膜开始，然后总是交替地出现一个绝缘薄膜和一个导电薄膜。至少一个导电薄膜被固有地构造，从而形成彼此电绝缘的导电印刷线路。
包含第一种金属材料并被设置在薄膜复合物的主区域上的至少一个导电薄膜具有至少一个薄膜段，其中一个由第二种金属材料构成的层被设置在所述薄膜段上。根据本发明，由第二种金属材料构成的所述层的层厚度与由第一种金属材料构成的薄膜的层厚度相比要薄。
附图说明
这种连接设备的特别优选的改进在示例性实施例的相应描述中提及。本发明的技术方案附带地基于图1至3中的示例性实施例更详细地解释。
图1以截面图示出了根据本发明的第一种连接设备，其中设置了一个基片和多个元件。
图2以第一个主区域的平面图示出了根据本发明的第二种连接设备。
图3以第二个主区域的平面图示出根据本发明的第二种连接设备，其中设置有一个未封装的元件。
具体实施方式
图1以截面图示出了根据本发明的第一种连接设备1，其中设置了一个基片2和多个元件3a/b、4、5。基片2在其面向连接设备1的一侧上具有彼此电绝缘的导电印刷线路22。这种类型的基片2最好被形成为所谓DCB(直接铜接合)基片，以用在功率半导体模块中，其在陶瓷载体20上具有由铜构成的金属导电印刷线路22。形成彼此电绝缘的导电印刷线路的所有其他基片同样都是适用的，在这种情况下所述导电印刷线路不需要如图所示在设置在基片上的元件下方的整个区域内形成。但是，当需要从元件散热时，这种形成方式是优选的。
设置在基片2的导电印刷线路22上的元件3a/b在本例中是功率二极管3b和功率三极管3a，其中并不意味着对这些元件的限制。这些功率半导体元件3a/b在其面向连接设备1的一侧上具有至少一个接触区域32、34、36。这在功率二极管3b的情况下是阳极36，而在功率晶体管3a的情况下是发射极32以及基极34。根据现有技术，功率半导体元件3a/b的接触区域被形成为铝层。
在第一种配置中，连接设备1包括一个第一金属层10，这里是层厚度在50至400μm之间的铝层，一个与之相邻的层厚度在10至80μm之间的塑料薄膜14，以及第二个金属薄膜12，这里是层厚度在20至100μm之间的铜薄膜，第一个薄膜的厚度至少是第二个薄膜的厚度的两倍。
为了将第一金属薄膜10导电连接到功率半导体元件3a/b的接触区域32、34、36，连接设备1的薄膜复合物具有第一压纹凸起16a。所述压纹凸起16a借助于超声焊接方法被连接到所分配的接触区域32、34、36。
为了将第一金属薄膜10导电连接到基片2的导电印刷线路22，连接设备1的薄膜复合物具有以更深的方式形成的第二压纹凸起16b。在所述第二压纹凸起16b的区域内，优选厚度在1至20μm之间的由铜构成的层被沉积在铝薄膜10之上。在这种情况下，其最好通过电镀方法或者通过冷气体喷镀工艺来实现。所述第二压纹凸起16b的铜表面借助于焊接工艺被连接到基片2的铜导电印刷线路22上。
连接设备1的塑料薄膜14具有用于第一导电层10和第二导电层12之间的间镀覆孔18的切口。从而使第一层的电势被施加到第二层上。这通过举例的方式对于功率晶体管3a的栅极电势而示出。
这里两个集成电路4、5例如设置在第二金属薄膜12上。这里最好也可以设置其他元件，如各个电阻、电容、线圈或者传感器。在其他配置中，这类元件也可以设置在基片2的导电印刷线路22上，并以和电路一致的方式连接。图示中示出了第一个集成电路4，这里是SMD元件的形式，带有用于通过焊接工艺连接到所分配的第二薄膜12的导电印刷线路的接触设备40。第二个集成电路5这里表示为一个未封装的元件，并借助于胶接工艺连接到第二导电层12。电连接被形成为元件5的各个接触区域与所分配的第二层12的导电印刷线路之间的细线接合连接52。
最好将一个具有金层构造的第二金属层设置在连接到接合线52的所述导电印刷线路的段之上。
所述连接设备1的外部连接，例如螺杆连接，可以被形成为整个薄膜复合物的圆形切口。在这种情况下，最好是将同心围绕在所述切口周围的第二金属层设置在一个主区域的至少一个导电薄膜层上。在这种情况下，所述层的厚度最好是100μm，并通过冷气体喷镀被沉积。
在第二种配置中，连接设备1包括一个第一金属薄膜，这里是由厚度在30至300μm之间的铜层构成，一个与之相邻的塑料薄膜，其层厚度在10至80μm之间，以及一个第二金属层，同样由厚度在30至300μm之间的铜层构成。
在这种配置中，用于焊接连接到功率半导体元件的接触区域的第一层的段利用由铝构成的第二层来形成。只有通过这种方式才能实现持久耐用的连接。在这种情况下，用于通过焊接工艺连接到基片的导电印刷线路的压纹凸起并不需要第二个金属层。
这里在图2和图3中同样揭示了三层结构。
根据本发明的连接设备的其他配置例如具有由各种情况下都相同的金属构成的金属层，这两个层的层厚度相同。根据本发明，同样也可以具有优点地形成5层的层序列，其中这里的中间金属层最好以特别薄的方式形成，作为屏蔽平面，并在操作中处于限定的电位。
图2示出了根据本发明的第二种连接设备1的薄膜复合物，其在所述连接设备的第一个主区域的平面图中示出。该图示示出了塑料薄膜结构的绝缘层14，并且在薄膜复合物的第一形成中，示出了由铝构成的第一个导电层10。这个铝层10被固有地构造，在其中除了薄膜复合物外，形成了三个彼此电绝缘的导电印刷线路。这些导电层10中的每一个都具有两组压纹凸起16a/b，用于未封装的半导体元件、这里是功率二极管的超声焊接连接，或者用于焊接连接到基片的导电印刷线路上。这种构造的替代实施例适用于要连接的多种不同未封装的元件，而不仅仅是功率半导体元件。
在第一种配置中，第一组压纹凸起16a适用于将元件点焊连接到接触区域，这些接触区域最好同样由铝构成。在第二组压纹凸起16b的段内，铝层与一个铜构成的薄层一起设置，铜是通过电极沉积或通过冷气体喷镀而沉积的。这个铜层102特别适用于焊接连接到基片的导电印刷线路上。
在(未示出的)第二个实施例中，第二个导电层包含铜。这是特别优选的，因为铜具有很高的导热性，以传送走来自元件的热损耗，并且具有很低的电阻率，以实现高电流承载能力。在这种情况下，需要形成压纹凸起组，用于点焊接连接到具有由铝构成的第二金属层的元件上，从而为焊接连接提供适用的表面。
图3在第二个主区域的平面图中示出了根据本发明的第二种连接设备1，该结构中具有设置在其上的未封装的元件5。该图示示出了一个具有塑料薄膜结构的绝缘层14和由铜构成的第二个导电层12。与第一金属层(10，参见图2)相比，这个铜层12被固有地、更为精细地构造，并且在其中除了形成用于元件5的胶接连接的区域外，这里还形成了用于驱动功率半导体元件的驱动器电路。另外这个铜层还形成了连接所述驱动器电路的多个导电印刷线路12。所述导电印刷线路依次彼此电绝缘，并具有用于其它元件的其他接触区域，例如这里以电容器6的形式表示的元件。所述导电印刷线路还具有提供了另一个金属层122的段，这里是金层的结构，厚度在0.5至5μm之间。这些带有金涂层的段是优选的接触区域，用于驱动器电路5的接触区域50与导电印刷线路12之间的细线接合连接52。类似地示出了至薄膜复合物的第一导电层的间镀覆孔18。

Claims (6)

1.一种用于未封装的功率半导体元件与至少一个基片的导电连接的连接设备，其中所述连接设备被形成为由至少一个绝缘层以及由导电薄膜形成的至少第一主区域和第二主区域构成的薄膜复合物，所述薄膜复合物以一个导电薄膜和一个绝缘薄膜分别交替出现的层结构来设置，并且至少一个导电薄膜被构造，从而形成导电印刷线路，其中所述薄膜复合物的形成第一主区域的导电薄膜由第一种金属构成，并具有至少一个薄膜段，该薄膜段具有与所述形成第一主区域的导电薄膜的厚度相比要薄的、由第二种金属构成的层，
其中所述薄膜复合物具有至少一个用于连接功率半导体元件的压纹凸起和至少一个用于连接导电印刷线路的压纹凸起，并且
其中这些压纹凸起中的至少一个被设置在形成第一主区域的导电薄膜的具有由第二种金属构成的层的薄膜段内。
2.根据权利要求1的连接设备，其中至少一个绝缘层具有用于相邻导电薄膜的导电连接的至少一个切口。
3.根据权利要求1的连接设备，其中一个未封装的功率半导体元件被设置，并通过点焊接连接以和电路相一致的方式被导电连接到薄膜复合物在其第一主区域上的压纹凸起。
4.根据权利要求1的连接设备，其中基片的一个导电印刷线路通过焊接连接以和电路一致的方式被导电连接到薄膜复合物的压纹凸起。
5.根据权利要求1的连接设备，其中SMD元件或未封装的元件通过焊接工艺或胶接工艺被设置到薄膜复合物的第二主区域上。
6.根据权利要求5的连接设备，其中未封装的元件通过细线接合连接以和电路一致的方式被导电连接到薄膜复合物的第二主区域的导电印刷线路上。
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Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080221973A1 (en) * 2005-10-24 2008-09-11 Megdal Myles G Using commercial share of wallet to rate investments
DE102007044620A1 (de) * 2007-09-19 2009-04-16 Semikron Elektronik Gmbh & Co. Kg Anordnung mit einer Verbindungseinrichtung und mindestens einem Halbleiterbauelement
US7838978B2 (en) 2007-09-19 2010-11-23 Infineon Technologies Ag Semiconductor device
DE102007054710B3 (de) 2007-11-16 2009-07-09 Semikron Elektronik Gmbh & Co. Kg Verfahren zur Herstellung einer Halbleiterbaugruppe
US8124449B2 (en) 2008-12-02 2012-02-28 Infineon Technologies Ag Device including a semiconductor chip and metal foils
DE102009017733B4 (de) * 2009-04-11 2011-12-08 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit einer Verbindungseinrichtung und mit als Kontaktfeder ausgebildeten internen Anschlusselementen
US20130264721A1 (en) 2012-04-05 2013-10-10 Infineon Technologies Ag Electronic Module
DE102012007074A1 (de) * 2012-04-11 2013-10-17 Johnson Electric Germany GmbH & Co. KG Elektrisches Bauteil mit wenigstens einem flexiblen Trägermaterial und Verfahren zur Anordnung einzelner Metallkörper auf den Leiterbahnen eines flexiblen Trägermaterials
DE102012218868B3 (de) * 2012-10-17 2013-11-07 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul
DE102013104949B3 (de) * 2013-05-14 2014-04-24 Semikron Elektronik Gmbh & Co. Kg Leistungselektronische Schalteinrichtung und Anordnung hiermit
DE102013213448B4 (de) 2013-07-09 2021-12-09 Siemens Aktiengesellschaft Elektronikbaugruppe mit Leistungshalbleiter
CN104507264B (zh) * 2014-12-31 2017-10-20 苏州福莱盈电子有限公司 一种用于30微米精细线路的制作工艺
DE102015224257A1 (de) * 2015-12-03 2017-06-08 Continental Teves Ag & Co. Ohg Elektrische Leiterbahn, Verfahren und Verwendung
CN108659245B (zh) * 2018-05-17 2020-07-31 中国人民解放军国防科技大学 一种屏蔽增强周期结构
DE102019117476B4 (de) * 2019-06-28 2024-03-14 Semikron Elektronik Gmbh & Co. Kg Leistungselektronische Schalteinrichtung mit einem Anschlusselement
DE102019126265B4 (de) * 2019-09-30 2023-12-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung umfassend ein erstes Trägersubstrat und ein zweites Trägersubstrat, Kraftfahrzeug und Verfahren zur Herstellung einer Vorrichtung

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1536613A (zh) * 1999-02-05 2004-10-13 索尼化学株式会社 衬底元片及软衬底

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5121299A (en) * 1989-12-29 1992-06-09 International Business Machines Corporation Multi-level circuit structure utilizing conductive cores having conductive protrusions and cavities therein
JPH07193098A (ja) * 1993-11-22 1995-07-28 Fujitsu Ltd 半導体装置及びその製造方法
KR0154994B1 (ko) * 1993-11-22 1998-12-01 세끼자와 다다시 반도체장치 및 그 제조방법
DE19617055C1 (de) * 1996-04-29 1997-06-26 Semikron Elektronik Gmbh Halbleiterleistungsmodul hoher Packungsdichte in Mehrschichtbauweise
DE10207589A1 (de) * 2002-02-22 2003-10-16 Leoni Ag Verfahren zum Erzeugen einer Leiterbahn auf einem Trägerbauteil sowie Trägerbauteil
DE10221970A1 (de) 2002-05-17 2003-11-27 Deutsche Telekom Ag Optischer Detektor mit Auflösung im Nanometerbereich
DE10344121A1 (de) * 2003-09-24 2005-04-21 Daimler Chrysler Ag Leiterbahnträger
DE10355925B4 (de) * 2003-11-29 2006-07-06 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul und Verfahren seiner Herstellung

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1536613A (zh) * 1999-02-05 2004-10-13 索尼化学株式会社 衬底元片及软衬底

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2005-197648A 2005.07.21

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