CN101043049A - 叠层布线和利用该叠层布线的半导体器件及其制造方法 - Google Patents
叠层布线和利用该叠层布线的半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN101043049A CN101043049A CNA2007100887462A CN200710088746A CN101043049A CN 101043049 A CN101043049 A CN 101043049A CN A2007100887462 A CNA2007100887462 A CN A2007100887462A CN 200710088746 A CN200710088746 A CN 200710088746A CN 101043049 A CN101043049 A CN 101043049A
- Authority
- CN
- China
- Prior art keywords
- film
- microcrystalline silicon
- silicon film
- crystal grain
- film thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 109
- 238000004519 manufacturing process Methods 0.000 title claims description 49
- 239000004065 semiconductor Substances 0.000 title claims description 26
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims abstract description 250
- 239000013078 crystal Substances 0.000 claims abstract description 141
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 64
- 239000012528 membrane Substances 0.000 claims description 86
- 229920005591 polysilicon Polymers 0.000 claims description 63
- 230000015572 biosynthetic process Effects 0.000 claims description 39
- 238000005984 hydrogenation reaction Methods 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 31
- 238000010438 heat treatment Methods 0.000 claims description 28
- 230000004913 activation Effects 0.000 claims description 26
- 230000008021 deposition Effects 0.000 claims description 21
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 238000002425 crystallisation Methods 0.000 claims description 3
- 230000008025 crystallization Effects 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 238000005224 laser annealing Methods 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 463
- 229910021332 silicide Inorganic materials 0.000 abstract description 24
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract description 24
- 239000010409 thin film Substances 0.000 abstract description 20
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 8
- 238000005755 formation reaction Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 47
- 238000001994 activation Methods 0.000 description 24
- 238000006243 chemical reaction Methods 0.000 description 22
- 238000000151 deposition Methods 0.000 description 18
- 238000005530 etching Methods 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 239000011229 interlayer Substances 0.000 description 13
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 238000000137 annealing Methods 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 230000001186 cumulative effect Effects 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000004904 shortening Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- -1 and therefore Substances 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910015844 BCl3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910001257 Nb alloy Inorganic materials 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical class P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- FRIKWZARTBPWBN-UHFFFAOYSA-N [Si].O=[Si]=O Chemical compound [Si].O=[Si]=O FRIKWZARTBPWBN-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000008247 solid mixture Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006078653 | 2006-03-22 | ||
JP2006078653A JP5344205B2 (ja) | 2006-03-22 | 2006-03-22 | 積層配線、該積層配線を用いた半導体装置及びその製造方法 |
JP2006-078653 | 2006-03-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101043049A true CN101043049A (zh) | 2007-09-26 |
CN101043049B CN101043049B (zh) | 2010-10-13 |
Family
ID=38532407
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007100887462A Active CN101043049B (zh) | 2006-03-22 | 2007-03-22 | 叠层布线和利用该叠层布线的半导体器件及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (3) | US7619255B2 (zh) |
JP (1) | JP5344205B2 (zh) |
CN (1) | CN101043049B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111681960A (zh) * | 2020-05-12 | 2020-09-18 | 福建华佳彩有限公司 | 一种tft结构的制作方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5175476B2 (ja) * | 2007-02-28 | 2013-04-03 | 三洋電機株式会社 | 回路装置の製造方法 |
KR101042957B1 (ko) * | 2010-03-19 | 2011-06-20 | 삼성모바일디스플레이주식회사 | 트랜지스터 기판, 및 이의 제조 방법 |
JP6446204B2 (ja) * | 2014-08-27 | 2018-12-26 | 株式会社ジャパンディスプレイ | 表示装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61208869A (ja) * | 1985-03-14 | 1986-09-17 | Nec Corp | 半導体装置及びその製造方法 |
JP2896189B2 (ja) | 1990-03-30 | 1999-05-31 | 富士通株式会社 | プラズマディスプレイ装置 |
JP3440291B2 (ja) * | 1995-05-25 | 2003-08-25 | 独立行政法人産業技術総合研究所 | 微結晶シリコン薄膜トランジスタ |
JP3439051B2 (ja) * | 1996-11-07 | 2003-08-25 | 株式会社富士電機総合研究所 | 微結晶膜およびその製造方法 |
US6064149A (en) * | 1998-02-23 | 2000-05-16 | Micron Technology Inc. | Field emission device with silicon-containing adhesion layer |
JPH11246971A (ja) * | 1998-03-03 | 1999-09-14 | Canon Inc | 微結晶シリコン系薄膜の作製方法及び作製装置 |
JP3282582B2 (ja) | 1998-04-21 | 2002-05-13 | 日本電気株式会社 | トップゲート型薄膜トランジスタ及びその製造方法 |
JP3613221B2 (ja) | 2001-10-09 | 2005-01-26 | 日本電気株式会社 | 薄膜トランジスタの製造方法 |
KR100625836B1 (ko) * | 2002-03-08 | 2006-09-20 | 마츠시다 덴코 가부시키가이샤 | 양자장치 |
JP2004071653A (ja) * | 2002-08-01 | 2004-03-04 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JP4382375B2 (ja) | 2003-03-13 | 2009-12-09 | Nec液晶テクノロジー株式会社 | 薄膜トランジスタの製造方法 |
JP4304374B2 (ja) * | 2004-07-26 | 2009-07-29 | 日本電気株式会社 | トップゲート型薄膜トランジスタ |
US7642205B2 (en) * | 2005-04-08 | 2010-01-05 | Mattson Technology, Inc. | Rapid thermal processing using energy transfer layers |
-
2006
- 2006-03-22 JP JP2006078653A patent/JP5344205B2/ja active Active
-
2007
- 2007-03-21 US US11/723,600 patent/US7619255B2/en active Active
- 2007-03-22 CN CN2007100887462A patent/CN101043049B/zh active Active
-
2009
- 2009-06-24 US US12/490,790 patent/US7851807B2/en not_active Expired - Fee Related
-
2010
- 2010-11-09 US US12/942,381 patent/US8026162B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111681960A (zh) * | 2020-05-12 | 2020-09-18 | 福建华佳彩有限公司 | 一种tft结构的制作方法 |
Also Published As
Publication number | Publication date |
---|---|
US20090315183A1 (en) | 2009-12-24 |
US8026162B2 (en) | 2011-09-27 |
US7851807B2 (en) | 2010-12-14 |
JP2007258339A (ja) | 2007-10-04 |
JP5344205B2 (ja) | 2013-11-20 |
US20110053354A1 (en) | 2011-03-03 |
US7619255B2 (en) | 2009-11-17 |
CN101043049B (zh) | 2010-10-13 |
US20070221922A1 (en) | 2007-09-27 |
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Address after: Kanagawa, Japan Patentee after: NLT Technologies Ltd. Address before: Kanagawa, Japan Patentee before: NEC LCD Technologies, Ltd. |