CN101034606A - Making method for current induction wafer resistor - Google Patents
Making method for current induction wafer resistor Download PDFInfo
- Publication number
- CN101034606A CN101034606A CN 200710085228 CN200710085228A CN101034606A CN 101034606 A CN101034606 A CN 101034606A CN 200710085228 CN200710085228 CN 200710085228 CN 200710085228 A CN200710085228 A CN 200710085228A CN 101034606 A CN101034606 A CN 101034606A
- Authority
- CN
- China
- Prior art keywords
- resistance
- aluminium nitride
- layer
- coating
- carried out
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
The invention relates to a manufacture method of electro response chip resistor, which belongs to the electromechanical kind. It contains two steps of front produce process and back produce process, among, the front produce process step contains the aluminium nitride (AlN) basal plate to carry on the resistance shade layer coating, the resistance layer vacuum coating, remove the resistance shade layer, the resistance protector coating, conductive layer galvanization and the laser crystal grain separation cuts; The latter step contains the laser resistance value to cut and adjustment, resistance protector printing, character code printing, the resistance protector dries out hardened, the first broken line, the side conductor vacuum coating, the second broken line, the nickel galvanizing , the tin galvanizing and the resistor end product packing. Its merit lies in: using aluminium nitride (AlN) basal plate, film produce process and one-sided produce process cover crystal (Flip Chip) structure, may achieve high power, high accuracy, high thermal conductivity, and save the use space of printed circuit board, the strong usability.
Description
Technical field
The present invention relates to electrical category, particularly a kind of manufacture method of electro response chip resistor.
Background technology
As everyone knows, general resistor manufacturing process A commonly used, it includes aluminium oxide (Al
2O
3) substrate A1 carries out back side conductor printing A2, front resistance printing A3, front surface conductors is printed A4, high-temperature roasting A5, glassivation printing A6 and glassivation roasting A7, yet because of using aluminium oxide (Al by preceding processing procedure A1
2O
3) substrate A1, resistor manufacturing process A only uses the thick film processing procedure, cause power low (1W), precision low (1%), the coefficient of conductivity low (15～20mW), temperature coefficient height and noise height, and because of its resistor manufacturing process A do not have use the single face processing procedure cover crystalline substance (Flip Chip) structure technology, by this, just increase the problem of printed circuit board (PCB) (PCB, Printed Circuit Board) usage space, need be improved.
Summary of the invention
The object of the present invention is to provide a kind of manufacture method of electro response chip resistor, problem such as solved that the power that resistor manufacturing process commonly used deposits is low, precision low and the coefficient of conductivity is low.
Technical scheme of the present invention is: processing procedure and back processing procedure two steps before the resistor manufacturing process includes, wherein, preceding fabrication steps is earlier aluminium nitride (AlN) substrate to be carried out the coating of resistance mask layer, after the coating of resistance mask layer, it is carried out resistive layer vacuum coating, again aluminium nitride (AlN) substrate is removed the resistance mask layer, and after removing the resistance mask layer, again it is carried out the coating of resistance protection layer, and after coating, to carry out conductive layer at aluminium nitride (AlN) substrate and electroplate, carry out the cutting of laser die separation again, the step that after the cutting of laser die separation, enters the back processing procedure;
Back fabrication steps is aluminium nitride (AlN) substrate to be carried out the laser resistance value cutting adjust to adjust the accuracy of resistance value; carry out the printing of resistance protection layer again; after the printing of resistance protection layer; aluminium nitride (AlN) substrate is carried out character code printing; after character code printing is finished; to enter the resistance protection layer and dry sclerosis; carry out the broken string first time of aluminium nitride (AlN) substrate again; carry out side conductor vacuum coating in the side of aluminium nitride (AlN) substrate again; and after side conductor vacuum coating; again it is carried out the broken string second time, after breaking for the second time, electroless nickel layer is carried out on the surface of its aluminium nitride (AlN) substrate in advance; carry out the electrotinning layer again; behind the electrotinning layer, be the finished product of resistor, again its finished product is carried out the resistor finished product packing.Wherein, this resistor manufacturing process uses thin film manufacture process, and it is when thin film manufacture process, use aluminium nitride (AlN) substrate, and cover crystalline substance (Flip Chip) structure technology by the single face processing procedure, the usage space that makes resistor reach high power, high precision, high heat-conduction coefficient and save printed circuit board (PCB) (PCB, Printed CircuitBoard); Wherein, the high power optimum value of aluminium nitride (AlN) substrate can reach＞usefulness of 2W; The technology of thin film manufacture process can reach high precision, and its optimal values is≤0.5% usefulness; Coefficient of conductivity the best of this thin film manufacture process can reach the usefulness that numerical value is 150～230mW; The technology of covering crystalline substance (FIip Chip) structure can reach resistor and be welded on printed circuit board (PCB) (PCB, Printed Circuit Board) when going up, the usage space of saving printed circuit board (PCB) (PCB, PrintedCircuit Board) 30%.
The invention has the advantages that: that uses aluminium nitride (AlN) substrate, thin film manufacture process and single face processing procedure covers crystalline substance (Flip Chip) structure, can reach power height, precision height, coefficient of heat conduction height, and save the usage space of printed circuit board (PCB), practical.
Description of drawings:
Fig. 1 is the calcspar of resistor processing flow commonly used;
Fig. 2, Fig. 3 are calcspar of the present invention;
Fig. 4 to Figure 11 is the embodiments of the invention schematic diagram.
Embodiment:
Shown in accompanying drawing 2 and accompanying drawing 3, processing procedure C and back processing procedure D before resistor manufacturing process B of the present invention includes, wherein, preceding processing procedure C carries out aluminium nitride (AlN) substrate C1 resistance mask layer coating C2 earlier, behind resistance mask layer coating C2, it is carried out resistive layer vacuum coating C3, again aluminium nitride (AlN) substrate C1 is removed resistance mask layer C4, and after removing resistance mask layer C4, again it is carried out resistance protection layer coating C5, and after coating, will carry out conductive layer at aluminium nitride (AlN) substrate C1 and electroplate C6, carry out laser die separation cutting C7 again, the step that behind laser die separation cutting C7, enters back processing procedure D;
Back processing procedure D carries out the laser resistance value cutting with aluminium nitride (AlN) substrate C1 and adjusts D1 to adjust the accuracy of resistance value; carry out resistance protection layer printing D2 again; behind resistance protection layer printing D2; C1 carries out character code printing D3 with aluminium nitride (AlN) substrate; after character code printing D3 finishes; to enter the resistance protection layer and dry sclerosis D4; D5 breaks the first time of carrying out aluminium nitride (AlN) substrate C1 again; carry out side conductor vacuum coating D6 in the side of aluminium nitride (AlN) substrate C1 again; and behind side conductor vacuum coating D6; again it is carried out the D7 that breaks the second time, behind the D7 that breaks for the second time, electroless nickel layer D8 is carried out on the surface of its aluminium nitride (AlN) substrate C1 in advance; carry out electrotinning layer D9 again; behind electrotinning layer D9, be the finished product of resistor, again its finished product is carried out resistor finished product packing D10.
Processing procedure C and back processing procedure D before being divided into to accompanying drawing 5 resistor manufacturing process B as accompanying drawing 3, making the required substrate material of resistor is aluminium nitride (AlN) substrate E, resistor manufacturing process B uses thin film manufacture process, cover crystalline substance (Flip Chip) structure technology in conjunction with the single face processing procedure, by this, earlier aluminium nitride (AlN) substrate E is carried out resistance mask layer coating C2, this resistance mask layer coating C2 is coated with several mask layers E1 with the substrate E2 on aluminium nitride (AlN) the substrate E, the mask layer E1 of this substrate E2 is because of at the position that will not make its conducting, again aluminium nitride (AlN) substrate E is carried out resistive layer vacuum coating C3, after this resistive layer vacuum coating C3 makes substrate E2 vacuum coating one deck plated film of aluminium nitride (AlN) substrate E, the substrate E2 of aluminium nitride (AlN) substrate E itself is provided with resistive layer E3, to remove the step of resistance mask layer C4 again, just be the substrate E2 of aluminium nitride (AlN) substrate E after mask layer E1 removes.
Shown in accompanying drawing 3, accompanying drawing 6 and accompanying drawing 7; aluminium nitride (AlN) substrate E is after removing resistance mask layer C4; the step of adapting electric voltage protective layer coating C5; E is coated with several protective layers E4 with aluminium nitride (AlN) substrate; and make protective layer E4 and resistive layer E3 on aluminium nitride (AlN) substrate E, present netted pattern; behind resistance protection layer coating C5, carry out conductive layer and electroplate C6, conductive layer is electroplated C6 conductive layer E5 is plated on the position that aluminium nitride (AlN) substrate E does not have printing protective layer E4.
As accompanying drawing 3; shown in accompanying drawing 8 and the accompanying drawing 9; aluminium nitride (AlN) substrate E is after conductive layer is electroplated C6; the step of the laser die separation that continues cutting C7; this laser die separation cutting C7 uses laser to go up cutting at aluminium nitride (AlN) substrate E; make aluminium nitride (AlN) substrate E that the line of cut E6 of netted pattern be arranged; by this; to enter back processing procedure D; when finishing laser die separation cutting C7; and the action of D1 is adjusted in the laser resistance value cutting that continues; adjust D1 by the laser resistance value cutting and resistance value can be adjusted to accurate numerical value; after D1 is adjusted in the laser resistance value cutting; carry out the action of resistance protection layer printing D2; behind resistance protection layer printing D2; the character code printing that continues D3; this character code printing D3 is printed on character code E7 on the protective layer E4 of aluminium nitride (AlN) substrate E; by this; can allow the user understand the resistance value of this resistor; behind character code printing D3; carry out the resistance protection layer and dry the step of sclerosis D4, it is that protective layer E4 with aluminium nitride (AlN) substrate E dries at 220 ± 10 ℃ that this resistance protection layer is dried sclerosis D4.
As accompanying drawing 3; and shown in accompanying drawing 10 and the accompanying drawing 11; after the resistance protection layer is dried sclerosis D4; E carries out the D5 that breaks the first time with aluminium nitride (AlN) substrate; this D5 that breaks for the first time extends the line of cut E6 of one direction with aluminium nitride (AlN) substrate E and is separated; make it become semi-finished product E8; and behind the D5 that breaks for the first time; carry out the step of side conductor vacuum coating D6; side conductor vacuum coating D6 is with the side of conductive layer E5 vacuum coating at semi-finished product E8; just be not easy to use the person by side conductor vacuum coating D6 and be easy to weld printed circuit board (PCB) (PCB; Printde Circuit Board) and conducting used; behind its side conductor vacuum coating D6; just carry out the D7 that breaks the second time; behind the D7 that carries out breaking the second time; the line of cut E6 of semi-finished product E8 continuity other direction is separated it; make it become resistor E10; behind the D7 that carries out breaking the second time; the action of electroless nickel layer D8 and electrotinning layer D9 continues; when electroless nickel layer D8 and electrotinning layer D9; nickel and tin are electroplated on the surperficial E9 of resistor E10; by this, just finish the manufacturing of resistor E10, and can carry out the action that the resistor finished product packing is put D10.
Shown in accompanying drawing 3 and accompanying drawing 11, when making resistor E10, use thin film manufacture process, and that uses aluminium nitride (AlN) substrate C1 and single face processing procedure in thin film manufacture process covers crystalline substance (FlipChip) structure technology, wherein thin film manufacture process is the mode of vacuum coating, the technology of its flip chip structure is the method that resistor uses the single face processing procedure, make its reach can produce high power (＞2W), high precision (≤0.5%), high heat-conduction coefficient (150～230mW) and save the usefulness of printed circuit board (PCB) (PCB, Printed Circuit Board) usage space (30%).
Claims (1)
1, a kind of manufacture method of electro response chip resistor, it is characterized in that: processing procedure and back processing procedure two steps before the resistor manufacturing process includes, wherein, preceding fabrication steps is earlier aluminium nitride substrate to be carried out the coating of resistance mask layer, after the coating of resistance mask layer, it is carried out resistive layer vacuum coating, again aluminium nitride substrate is removed the resistance mask layer, and after removing the resistance mask layer, again it is carried out the coating of resistance protection layer, and after coating, will carry out conductive layer at aluminium nitride substrate and electroplate, carry out the cutting of laser die separation again, the step that after the cutting of laser die separation, enters the back processing procedure;
Back fabrication steps is aluminium nitride substrate to be carried out the laser resistance value cutting adjust to adjust the accuracy of resistance value; carry out the printing of resistance protection layer again; after the printing of resistance protection layer; aluminium nitride substrate is carried out character code printing; after character code printing is finished; to enter the resistance protection layer and dry sclerosis; carry out the broken string first time of aluminium nitride substrate again; carry out side conductor vacuum coating in the side of aluminium nitride substrate again; and after side conductor vacuum coating; again it is carried out the broken string second time, after breaking for the second time, electroless nickel layer is carried out on the surface of its aluminium nitride substrate in advance; carry out the electrotinning layer again; behind the electrotinning layer, be the finished product of resistor, again its finished product is carried out the resistor finished product packing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100852285A CN100524547C (en) | 2007-02-14 | 2007-02-14 | Making method for current induction wafer resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100852285A CN100524547C (en) | 2007-02-14 | 2007-02-14 | Making method for current induction wafer resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101034606A true CN101034606A (en) | 2007-09-12 |
| CN100524547C CN100524547C (en) | 2009-08-05 |
Family
ID=38731089
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007100852285A Active CN100524547C (en) | 2007-02-14 | 2007-02-14 | Making method for current induction wafer resistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100524547C (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900358A (en) * | 2014-03-03 | 2015-09-09 | 华新科技股份有限公司 | Method for manufacturing thin film resistor |
| CN105244130A (en) * | 2015-11-03 | 2016-01-13 | 深圳市美隆电子有限公司 | Manufacturing method of super-micro alloy resistor |
| CN105551701A (en) * | 2015-12-31 | 2016-05-04 | 旺诠科技(昆山)有限公司 | Chip resistor production method capable of avoiding failure of resistance value |
| CN107408433A (en) * | 2015-04-28 | 2017-11-28 | 新确有限公司 | Shunt resistance device and its manufacture method |
| TWI620318B (en) * | 2016-08-10 | 2018-04-01 | Wafer resistor device and method of manufacturing same | |
| CN113539594A (en) * | 2021-06-18 | 2021-10-22 | 翔声科技（厦门）有限公司 | Low-resistance negative temperature coefficient thermistor and manufacturing process thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103050205A (en) * | 2012-12-19 | 2013-04-17 | 中国振华集团云科电子有限公司 | Manufacturing method for radio frequency power resistor |
-
2007
- 2007-02-14 CN CNB2007100852285A patent/CN100524547C/en active Active
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900358A (en) * | 2014-03-03 | 2015-09-09 | 华新科技股份有限公司 | Method for manufacturing thin film resistor |
| CN104900358B (en) * | 2014-03-03 | 2017-10-10 | 华新科技股份有限公司 | Method for manufacturing thin film resistor |
| CN107408433A (en) * | 2015-04-28 | 2017-11-28 | 新确有限公司 | Shunt resistance device and its manufacture method |
| CN107408433B (en) * | 2015-04-28 | 2020-06-30 | 新确有限公司 | Shunt resistor and method for manufacturing the same |
| CN105244130A (en) * | 2015-11-03 | 2016-01-13 | 深圳市美隆电子有限公司 | Manufacturing method of super-micro alloy resistor |
| CN105244130B (en) * | 2015-11-03 | 2018-06-29 | 深圳市美隆电子有限公司 | A kind of production method of superminiature alloy fled rheostat |
| CN105551701A (en) * | 2015-12-31 | 2016-05-04 | 旺诠科技(昆山)有限公司 | Chip resistor production method capable of avoiding failure of resistance value |
| TWI620318B (en) * | 2016-08-10 | 2018-04-01 | Wafer resistor device and method of manufacturing same | |
| CN113539594A (en) * | 2021-06-18 | 2021-10-22 | 翔声科技（厦门）有限公司 | Low-resistance negative temperature coefficient thermistor and manufacturing process thereof |
| CN113539594B (en) * | 2021-06-18 | 2022-08-02 | 翔声科技（厦门）有限公司 | Low-resistance negative temperature coefficient thermistor and manufacturing process thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100524547C (en) | 2009-08-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100524547C (en) | Making method for current induction wafer resistor | |
| KR101484355B1 (en) | Method for producing a monocrystalline solar cell | |
| CN101345277B (en) | Production method of illuminating diode apparatus | |
| CN105323959A (en) | Printed circuit board, method of manufacturing the same, and apparatus for manufacturing the same | |
| CN113113199B (en) | High-power alloy foil resistor and manufacturing method thereof | |
| CN103050204B (en) | Chip-type linear positive temperature coefficient thermistor | |
| CN112864024A (en) | Ceramic circuit board and manufacturing method thereof | |
| CN101460014A (en) | Direct copper coating metallization manufacturing process for substrate | |
| CN107408432B (en) | Chip resister | |
| JP2002313612A (en) | Chip resistor and its manufacturing method | |
| TW201308616A (en) | Method of forming conductive pattern on substrate | |
| CN101826384A (en) | Method for manufacturing arrayed chip resistor | |
| JP2014116456A (en) | Chip resistor, current sensor device, and manufacturing method of chip resistor | |
| KR20120092120A (en) | Photovoltaic cell conductor consisting of two, high-temperature and low-temperature, screen-printed parts | |
| CN204795855U (en) | Wet -type plated metal base plate of prebored hole | |
| CN101364463A (en) | Chip resistor and preparation thereof | |
| US20080011610A1 (en) | Plating method | |
| JP2005108468A (en) | Transparent conductive sheet, manufacturing method of the same, and photosensitive solar cell using the same | |
| TW201133517A (en) | Chip resistor having a low resistance and method for manufacturing the same | |
| CN208922799U (en) | A kind of low resistivity value resistor | |
| CN101593644A (en) | A kind of miniature surface-adhered type fuse | |
| CN210349483U (en) | Low-resistance resistor | |
| CN101777621A (en) | High-heat-conductivity basal plate used for packaging high-power LED and preparation method | |
| CN208873560U (en) | Sputter copper 0R resistor | |
| CN107968128B (en) | Low-material-consumption, high-performance back contacts conduction integrate backboard and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |