CN101031846A - 防反射涂层用组合物及使用该组合物的图案形成方法 - Google Patents
防反射涂层用组合物及使用该组合物的图案形成方法 Download PDFInfo
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- CN101031846A CN101031846A CNA2005800215799A CN200580021579A CN101031846A CN 101031846 A CN101031846 A CN 101031846A CN A2005800215799 A CNA2005800215799 A CN A2005800215799A CN 200580021579 A CN200580021579 A CN 200580021579A CN 101031846 A CN101031846 A CN 101031846A
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
- Y10S438/952—Utilizing antireflective layer
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
- Paints Or Removers (AREA)
Abstract
Description
实施例1 | 实施例2 | 实施例3 | 实施例4 | |
C8F17CH2CH2SO3H(质量份) | 2.58 | 2.58 | 2.58 | 2.58 |
三乙醇胺(质量份) | 0.28 | 0.28 | 0.28 | 0.28 |
聚(乙烯基吡咯烷酮)(质量份) | 0.74 | 0.74 | 0.74 | 0.74 |
C6F13CH2CH2SCH2CH2COOH(质量份) | 0.40 | 0.30 | 0.20 | 0.10 |
纯水(质量份) | 96.00 | 96.10 | 96.20 | 96.30 |
图案形状 | 矩形 | 矩形 | 矩形 | 矩形 |
膜减少量() | 150.0 | 150.1 | 150.7 | 151.8 |
pH | 2.15 | 2.15 | 2.16 | 2.17 |
折射率 | 1.44 | 1.44 | 1.45 | 1.45 |
最低滴加量(ml) | 2.0 | 2.0 | 2.0 | 2.5 |
实施例5 | 实施例6 | |
C8F17CH2CH2SO3H(质量份) | 2.58 | 2.58 |
二乙基氨基乙醇(质量份) | 0.17 | |
单乙醇胺(质量份) | 0.12 | |
聚(乙烯基吡咯烷酮)(质量份) | 0.74 | 0.74 |
C6F13CH2CH2SCH2CH2COOH(质量份) | 0.40 | 0.40 |
纯水(质量份) | 96.11 | 96.16 |
图案形状 | 矩形 | 矩形 |
膜减少量() | 148.6 | 147.7 |
pH | 2.11 | 2.13 |
折射率 | 1.44 | 1.44 |
最低滴加量(ml) | 2.0 | 2.0 |
实施例7 | |
C8F17SO3H(质量份) | 2.58 |
三乙醇胺(质量份) | 0.28 |
聚(乙烯基吡咯烷酮)(质量份) | 0.74 |
C6F13CH2CH2SCH2CH2COOH(质量份) | 0.40 |
纯水(质量份) | 96.00 |
图案形状 | 矩形 |
膜减少量() | 200 |
pH | 2.15 |
折射率 | 1.44 |
最低滴加量(ml) | 2.0 |
比较例1 | 比较例2 | 比较例3 | 比较例4 | |
C8F17CH2CH2SO3H(质量份) | 2.58 | 2.58 | 2.58 | 2.58 |
三乙醇胺(质量份) | 0.28 | |||
二乙基氨基乙醇(质量份) | 0.17 | |||
单乙醇胺(质量份) | 0.12 | |||
聚(乙烯基吡咯烷酮)(质量份) | 0.74 | 0.74 | 0.74 | 0.74 |
纯水(质量份) | 96.68 | 96.40 | 96.51 | 96.56 |
图案形状 | 略微圆顶 | 矩形 | 矩形 | 矩形 |
膜减少量() | 190.0 | 145.9 | 153.6 | 146.4 |
pH | 1.88 | 2.19 | 2.11 | 2.15 |
折射率 | 1.44 | 1.45 | 1.45 | 1.45 |
最低滴加量(ml) | 5.0 | 3.0 | 3.0 | 3.0 |
比较例5 | 比较例6 | |
C8F17SO3H(质量份) | 2.58 | 1.60 |
C7F15SO3H(质量份) | 0.10 | |
C6F13SO3H(质量份) | 1.20 | |
C5F11SO3H(质量份) | 0.50 | |
C4F9SO3H(质量份) | 0.20 | |
三乙醇胺(质量份) | 0.28 | |
单乙醇胺(质量份) | 0.38 | |
聚(乙烯基吡咯烷酮)(质量份) | 0.74 | 1.0 |
C6F13SO2NH2(质量份) | 0.7 | |
纯水(质量份) | 96.40 | 94.32 |
图案形状 | 矩形 | 矩形 |
膜减少量() | 190 | 219 |
pH | 2.2 | 2.2 |
折射率 | 1.44 | 1.42 |
最低滴加量(ml) | 3.5 | 3.5 |
Claims (7)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2004194423 | 2004-06-30 | ||
JP194423/2004 | 2004-06-30 |
Publications (2)
Publication Number | Publication Date |
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CN101031846A true CN101031846A (zh) | 2007-09-05 |
CN100587600C CN100587600C (zh) | 2010-02-03 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN200580021579A Expired - Fee Related CN100587600C (zh) | 2004-06-30 | 2005-06-29 | 防反射涂层用组合物及使用该组合物的图案形成方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7537882B2 (zh) |
EP (1) | EP1775633A4 (zh) |
JP (1) | JP4397931B2 (zh) |
KR (1) | KR101156656B1 (zh) |
CN (1) | CN100587600C (zh) |
TW (1) | TWI362566B (zh) |
WO (1) | WO2006003958A1 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI347495B (en) * | 2006-01-08 | 2011-08-21 | Rohm & Haas Elect Mat | Coating compositions for photoresists |
KR101415430B1 (ko) | 2007-02-22 | 2014-08-06 | 아사히 가라스 가부시키가이샤 | 반사 방지 코팅용 조성물 |
FR2934172B1 (fr) * | 2008-07-28 | 2011-10-28 | Inst Francais Du Petrole | Solution absorbante a base de n,n,n'n'-tetramethylhexane -1,6-diamine et procede d'elimination de composes acides d'un effluent gazeux |
JP2010128136A (ja) * | 2008-11-27 | 2010-06-10 | Jsr Corp | 上層反射防止膜形成用組成物、上層反射防止膜及びパターン形成方法 |
JP5520489B2 (ja) * | 2009-01-07 | 2014-06-11 | 富士フイルム株式会社 | リソグラフィ用基板被覆方法、及び該方法に用いられる感活性光線または感放射線性樹脂組成物 |
JP5520488B2 (ja) * | 2009-01-07 | 2014-06-11 | 富士フイルム株式会社 | リソグラフィ用基板被覆方法、及び該方法に用いられる感活性光線または感放射線性樹脂組成物 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5330883A (en) * | 1992-06-29 | 1994-07-19 | Lsi Logic Corporation | Techniques for uniformizing photoresist thickness and critical dimension of underlying features |
JP2803549B2 (ja) * | 1993-12-21 | 1998-09-24 | 信越化学工業株式会社 | 光反射性防止材料及びパターン形成方法 |
US5631314A (en) * | 1994-04-27 | 1997-05-20 | Tokyo Ohka Kogyo Co., Ltd. | Liquid coating composition for use in forming photoresist coating films and photoresist material using said composition |
US5611850A (en) * | 1995-03-23 | 1997-03-18 | Mitsubishi Chemical Corporation | Composition for anti-reflective coating on resist |
JP3786298B2 (ja) * | 1995-03-23 | 2006-06-14 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 表面反射防止膜用組成物 |
JPH08292562A (ja) | 1995-04-25 | 1996-11-05 | Hitachi Chem Co Ltd | 反射防止膜組成物及びこれを用いたパターンの製造法 |
JP3510003B2 (ja) | 1995-05-01 | 2004-03-22 | クラリアント インターナショナル リミテッド | 反射防止コーティング用組成物 |
JP3630471B2 (ja) | 1995-05-08 | 2005-03-16 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | リソグラフィーにおける性能向上用塗布組成物および当該塗布組成物を使用したパターン形成方法 |
JP3767714B2 (ja) | 1996-04-19 | 2006-04-19 | 大日本インキ化学工業株式会社 | 反射防止膜用組成物 |
JP3694703B2 (ja) | 1996-04-25 | 2005-09-14 | Azエレクトロニックマテリアルズ株式会社 | 反射防止コーティング用組成物 |
JP3673399B2 (ja) * | 1998-06-03 | 2005-07-20 | クラリアント インターナショナル リミテッド | 反射防止コーティング用組成物 |
US6613494B2 (en) * | 2001-03-13 | 2003-09-02 | Kodak Polychrome Graphics Llc | Imageable element having a protective overlayer |
JP4214732B2 (ja) | 2002-06-25 | 2009-01-28 | Dic株式会社 | フッ素系界面活性剤 |
JP2004349857A (ja) | 2003-05-20 | 2004-12-09 | Fuji Heavy Ind Ltd | リヤビューカメラシステム |
-
2005
- 2005-06-27 TW TW094121404A patent/TWI362566B/zh active
- 2005-06-29 WO PCT/JP2005/012001 patent/WO2006003958A1/ja not_active Application Discontinuation
- 2005-06-29 KR KR1020067026871A patent/KR101156656B1/ko not_active IP Right Cessation
- 2005-06-29 US US11/630,411 patent/US7537882B2/en not_active Expired - Fee Related
- 2005-06-29 JP JP2006528769A patent/JP4397931B2/ja not_active Expired - Fee Related
- 2005-06-29 EP EP05765177A patent/EP1775633A4/en not_active Withdrawn
- 2005-06-29 CN CN200580021579A patent/CN100587600C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20070238048A1 (en) | 2007-10-11 |
US7537882B2 (en) | 2009-05-26 |
EP1775633A4 (en) | 2010-07-28 |
CN100587600C (zh) | 2010-02-03 |
JPWO2006003958A1 (ja) | 2008-07-31 |
EP1775633A1 (en) | 2007-04-18 |
TWI362566B (en) | 2012-04-21 |
KR101156656B1 (ko) | 2012-06-15 |
KR20070032954A (ko) | 2007-03-23 |
JP4397931B2 (ja) | 2010-01-13 |
TW200615697A (en) | 2006-05-16 |
WO2006003958A1 (ja) | 2006-01-12 |
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