CN101017865B - Lighting device and its making method - Google Patents
Lighting device and its making method Download PDFInfo
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- CN101017865B CN101017865B CN2006100045968A CN200610004596A CN101017865B CN 101017865 B CN101017865 B CN 101017865B CN 2006100045968 A CN2006100045968 A CN 2006100045968A CN 200610004596 A CN200610004596 A CN 200610004596A CN 101017865 B CN101017865 B CN 101017865B
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Abstract
The related luminescent device comprises: from bottom to top, a transparent base with first surface toward next layer and an opposite second surfaces, a transparent bonding layer, a first transparent conductive layer, multiple extension layers with a luminescent layer, a first electrode, and a second electrode. Wherein, the second surface area is over the luminescent layer with the area ratio is not less than 1.6.
Description
Technical field
The present invention relates to a kind of light-emitting device, more specifically, relate to a kind of light-emitting device and manufacturing approach thereof with multilayer epitaxial layer.
Background technology
Light-emittingdiode (LED) is different with conventional light source because of its principle of luminosity, structure etc., and has that volume is little, the advantage of high-reliability, and the application on market is more polynary.For example can the cooperation demand process various large-scale elements, to be applied to indoor or outdoors large display screen curtain.Therefore, in the manufacturing of light-emittingdiode, the raising of brightness is considerable problem always.
Figure 1A is the sketch map of known light-emittingdiode.Shown in Figure 1A, light-emittingdiode comprises substrate 110, be positioned at the multilayer epitaxial layer 130 of substrate 110 tops, have the multilayer epitaxial layer 130 of a luminescent layer 131, and the reflector 150 between multilayer epitaxial layer 130 and substrate 110.Reflector 150 is used for the top of spontaneous photosphere 131 light reflected back luminescent layer 131 down.Yet, for the bigger light of incidence angle,, can pass luminescent layer 131 repeatedly because of the reason of total reflection, and absorbed by luminescent layer 131 gradually like light R1 and light R2, therefore the brightness of light-emittingdiode and efficient reduce.Figure 1B is the sketch map of another known light-emittingdiode.Shown in Figure 1B, light-emittingdiode comprises transparency carrier 120 and has the multilayer epitaxial layer 130 of luminescent layer 131.The light that sends when spontaneous photosphere 131 through transparency carrier 120 bottom reflection, and when advancing toward the dual-side of transparency carrier 120, has some light (like light R3) because its incident angle θ
1Greater than critical angle θ
cAnd be reflected back toward light-emittingdiode inside, increase the chance that is absorbed by luminescent layer 131, and then reduce the brightness and the efficient of light-emittingdiode.
Therefore, be necessary to provide a kind of light-emitting device and preparation method thereof, to solve the problem that known technology was produced with the structure that reduces light luminescent layer number of times.
Summary of the invention
The present invention provides a kind of light-emitting device with transparent bonding layer, comprises the transparency carrier that can improve brightness, and the position is at first electrode and second electrode of homonymy.
At an embodiment; The present invention provides a kind of light-emitting device, comprise transparency carrier, be positioned at transparency carrier top transparent bonding layer, be positioned at the transparent bonding layer top the multilayer epitaxial layer, comprise luminescent layer the multilayer epitaxial layer, be positioned at first electrode of transparent bonding layer top and second electrode that is positioned at multilayer epitaxial layer top.Transparency carrier have with the transparent bonding layer first surface in contact and with the first surface opposing second surface, the ratio of the area of second surface and the area of luminescent layer is not less than 1.6.
At another embodiment, the present invention provides a kind of light-emitting device, and it comprises transparency carrier, is positioned at the transparent bonding layer of transparency carrier top; Be positioned at transparent bonding layer top the multilayer epitaxial layer, be positioned at first electrode of transparent bonding layer top; And second electrode that is positioned at multilayer epitaxial layer top.Wherein, transparency carrier have with the transparent bonding layer first surface in contact and with the relative second surface of (opposite) of first surface, the area of second surface is greater than the area of first surface.
The present invention provides a kind of method that forms light-emitting device in addition, and the multilayer epitaxial layer is fixed on the transparency carrier through transparent bonding layer, carries out tube core technology then, to obtain to improve the light-emitting device of brightness.
At an embodiment, the present invention provides temporary substrate, above temporary substrate, forms the multilayer epitaxial layer and first transparency conducting layer; The cutting temporary substrate is to form first tube core; First tube core comprises multilayer epitaxial layer partly, first transparency conducting layer partly, reaches the temporary substrate of part, and transparency carrier is provided, and above transparency carrier, forms transparent bonding layer; First tube core is fixed on transparent bonding layer top, cutting transparency carrier to form second tube core; Second tube core comprises at least one first tube core, transparent bonding layer partly, reaches the transparency carrier of part, and wherein, the transparency carrier of second tube core has and the transparent bonding layer first surface in contact; Reach the second surface with respect to first surface, the ratio of the area of the luminescent layer in the area of second surface and the multilayer epitaxial layer is not less than 1.6.
At another embodiment; The present invention provides transparency carrier; The transparency carrier top has light-emitting component; Wherein, Light-emitting component comprises the transparent bonding layer of the top that is positioned at this transparency carrier, the multilayer epitaxial layer that is positioned at transparent bonding layer top, first electrode that is positioned at the transparent bonding layer top and position second electrode above the multilayer epitaxial layer, and the cutting transparency carrier is so that transparency carrier is not less than 1.6 away from the ratio of the area of the area of the second surface of transparent bonding layer and the luminescent layer in the multilayer epitaxial layer.
Description of drawings
Figure 1A-1B is the sketch map of known light-emittingdiode.
Fig. 2 A-2C is the sketch map of light-emitting device of the present invention.
Fig. 3-Fig. 6 forms each step sketch map of the method for light-emitting device for the present invention.
Fig. 7 A-7C is the sketch map of different cutting methods of the present invention.
Description of reference numerals
110 substrates, 120 transparency carriers
130 multilayer epitaxial layers, 131 luminescent layer
150 reflector
200 light-emitting devices, 210 transparency carriers
211 first surfaces, 212 second surfaces
213 sides, 220 transparent bonding layers
230 first transparency conducting layers, 240 multilayer epitaxial layers
241 first contact layers, 242 first bond courses
243 luminescent layers, 244 second bond courses
245 second contact layers, 250 first electrodes
260 second electrodes, 270 grooves
280 reflector A exposed portions serve
Embodiment
Below will be with reference to the accompanying drawing the preferred embodiments of the present invention of demonstrating.Should note presenting the present invention for clear, each in the accompanying drawing layer and each element are not the scale according to material object, and for avoiding fuzzy content of the present invention, below explain and also omit known assembly, associated materials and treatment technology thereof.
Fig. 2 A-2C shows the preferred embodiments of the present invention, and light-emitting device 200 of the present invention comprises transparency carrier 210, is positioned at the transparent bonding layer 220 of transparency carrier 210 tops, first transparency conducting layer 230 above transparent bonding layer 220.The material of transparency carrier 210 comprises but non-glass substrate, sapphire substrate, SiC substrate, GaP substrate, GaAsP substrate or the ZnSe substrate of only limiting to.The material of transparent bonding layer 220 comprises but is not limited only to spin-coating glass, silicones, benzocyclobutane (BCB), epoxy resin (Epoxy), polyimides (polyimide) or crosses fluorine cyclobutane (PFCB).The material of first transparency conducting layer 230 comprises but is not limited only to tin indium oxide, cadmium tin, zinc oxide or zinc-tin oxide.
In addition, shown in Fig. 2 A-2C, light-emitting device 200 of the present invention also comprises multilayer epitaxial layer 240 and first electrode 250 and position second electrode 260 above multilayer epitaxial layer 240 that is positioned at first transparency conducting layer, 230 tops.Can optionally form groove 270 between first electrode 250 and the multilayer epitaxial layer 240.Multilayer epitaxial layer 240 comprises first contact layer 241, first bond course 242, luminescent layer 243, second bond course 244, and second contact layer 245.Can optionally form the second transparency conducting layer (not shown) between second electrode 260 and second contact layer 245, in order to form good Ohmic contact with second electrode 260 with scattered current function.The material of second transparency conducting layer comprises but is not limited only to tin indium oxide, cadmium tin, zinc oxide or zinc-tin oxide.The material of first contact layer 241 and second contact layer 245 comprises but is not limited only to GaP, GaAs, GaAsP.First bond course 242, first luminescent layer 243, and second bond course, 244 used materials comprise AlGaInP.The material of first electrode 250 and second electrode 260 comprises but is not limited only to Au, Al, Pt, Cr or Ti.In the structure shown in Fig. 2 A-2C, transparency carrier 210 has and transparent bonding layer 220 first surface in contact 211, and (opposite) second surface 212 relative with first surface 211.Yet it should be noted that the area of second surface 212 is greater than the area of luminescent layer 243.
Fig. 2 A shows the preferred embodiment of the area of second surface 212 greater than the area of luminescent layer 243.Shown in Fig. 2 A, the second surface 212 of transparency carrier has the area that equates in fact with first surface 211, and the area of first surface 211 and second surface 212 is greater than the area of luminescent layer 243.Therefore, the first surface 211 of transparency carrier can form the exposed portions serve A that is not covered by luminescent layer 243.Exposed portions serve A should not covered by luminescent layer 243 at least, among the figure, exposed portions serve A not by multilayer epitaxial layer 240, first transparency conducting layer 230, and transparent bonding layer 220 cover.The big I of exposed portions serve A decides through the area ratio of adjustment first surface 211 or second surface 212 and luminescent layer 243, and preferred area ratio is not less than 1.6.This structure with exposed portions serve A can make the brightness of light-emitting device 200 increase.Shown in Fig. 2 A, light R4 advances and can leave light-emitting device 200 via exposed portions serve A toward transparency carrier 210 tops from second surface 212, and therefore brightness increase.
Fig. 2 B shows that the area of second surface 212 is greater than another preferred embodiment of the area of luminescent layer 243 according to the present invention.Shown in Fig. 2 B, the area of second surface 212 is greater than the area of first surface 211.Particularly, the section of transparency carrier 210 is just like the trapezoidal-structure shown in Fig. 2 B.This structure can make the brightness of light-emitting device 200 increase, because the incidence angle θ that light is advanced toward the side 213 of transparency carrier 210 from second surface 212
2Can be controlled in critical angle θ
cScope in.In detail, α shown in Fig. 2 B is the angle that side 213 tilts toward multilayer epitaxial layer 240.Tilt angle alpha makes the incidence angle of light R5 by the θ among Figure 1B
1Change into θ
2(be θ
2=θ
1-α), and get into critical angle θ
cScope.So, light R5 just can leave transparency carrier 210, and can reflected back multilayer epitaxial layer 240.Those skilled in the art should know above-mentioned critical angle θ
cRelevant with transparency carrier 210 with the material of surrounding medium.Therefore, if surrounding medium is fixed, then can select suitable transparency carrier 210 with decision critical angle θ
c, through first surface 211 areas of change transparency carrier 210 and the ratio of second surface 212 areas, adjust required tilt angle alpha then.Is example with sapphire as transparency carrier 210, and second surface 212 preferably is not less than 1.6 with the area ratio of first surface 211, and is good with 4～20.The thickness of transparency carrier 210 is preferably between 50 to 200 microns, more preferably between 80 to 150 microns.
Fig. 2 C shows according to the present invention; The area of second surface 212 is greater than the another preferred embodiment of the area of luminescent layer 243, and in this example, second surface 212 is greater than first surface 211; And has exposed portions serve A on the first surface 211; Wherein, the ratio of second surface 212 and first surface 211, and the ratio of second surface 212 and luminescent layer 243 is as with described in the preceding text.
In addition, light-emitting device 200 also can be as required adds reflector 280 in the side of the second surface 212 of transparency carrier.Reflector 280 shown in Fig. 2 A-2C is an example to be attached directly to second table 212, but is not limited thereto.The material of reflector 280 comprises but the non-Sn of only limiting to, Al, Au, Pt, An, Ge, Ag or the like.Reflector 280 can also be distributed Bragg reflector (the Distributed Bragg Reflector by oxide constituted; DBR), oxide such as Al
2O
3, SiO
2, and TiO2.
Fig. 3 to Fig. 7 shows that the present invention forms the preferred embodiment of the method for light-emitting device.
As shown in Figure 3, temporary substrate 310 is provided, and on temporary substrate 310, forms multilayer epitaxial layer 240.The step that forms multilayer epitaxial layer 240 comprises: on temporary substrate 310, form second contact layer 245, second bond course 244, luminescent layer 243, second bond course 242 and first contact layer 241 in regular turn.Afterwards, form first transparency conducting layer 230 that covers multilayer epitaxial layer 240.As shown in Figure 3,310 of multilayer epitaxial layer 240 and temporary substrates, can form etch stop layer 320 as required, over etching when preventing follow-up removal temporary substrate 310 and destroy multilayer epitaxial layer 240.Preferably, etch stop layer 320 has the etch-rate lower than temporary substrate 310.
After forming the multilayer epitaxial layer 240 and first transparency conducting layer 230 on the temporary substrate 310, promptly carry out the cutting of temporary substrate 310, to form first tube core 400.As shown in Figure 4, first tube core 400 comprises first transparency conducting layer 230, and the temporary substrate 310 of part of multilayer epitaxial layer 240, the part of part.Cutting can laser or is carried out with diamond cutter.
Then, as shown in Figure 5, first tube core 400 is fixed in transparency carrier 210 tops.Can be pre-formed layer of transparent tack coat 220 on the first surface 211 of transparency carrier 210, in order to engage with first tube core 400.In addition, on the second surface 212 of transparency carrier 210 also alternative reflector 280 is set.The material of reflector 280 as previously mentioned.
Afterwards, as shown in Figure 6, remove the unnecessary transparent bonding layer 220 that exposes.Remove temporary substrate 310 steps then.If the material GaAs of temporary substrate 310 can use like 5H
3PO
3: 3H
2O
2: 3H
2O or NH
4OH:35H
2O
2Etching solution to remove GaAs temporary substrate 310.After removing the step of temporary substrate 310, further remove etch stop layer 320.
Then, utilize technologies such as known deposition, photoetching and etching to form structure like Fig. 7 A-7C.In detail, the part of etching multilayer epitaxial layer 240 optionally is with first transparency conducting layer 230 under exposing.Then, form the groove 270 shown in Fig. 7 A-7C, and above first transparency conducting layer 230, form first electrode 250, and above multilayer epitaxial layer 240, form second electrode 260.Groove 270 is isolated the multilayer epitaxial layer 240 and first electrode 250. First electrode 250 and 260 homonymies of second electrode at transparency carrier 210.In addition, also can form the second transparency conducting layer (not shown) between second electrode 260 and second contact layer 245 with scattered current function.Second transparency conducting layer can form good Ohmic contact with second electrode 260.Second transparency conducting layer can use the material like the first above-mentioned transparency conducting layer 230.
Then, carry out the cutting step of transparency carrier 210, to form second tube core 200 (being light-emitting device 200).The dotted line of Fig. 7 A-Fig. 7 C shows different nicking methods respectively, can obtain the light-emitting device 200 shown in Fig. 2 A-2C respectively.After cutting was accomplished, second tube core 200 comprised transparent bonding layer 220, and the transparency carrier 210 of part of first tube core 400, part.Should note during cutting; The transparency carrier 210 of formed second tube core 200 has and transparent bonding layer 220 first surface in contact 211; Reach relative (opposite) in the second surface 212 of first surface 211, the area of second surface 212 is greater than the area of luminescent layer 243.The cutting method of Fig. 7 A can make the transparency carrier 210 of second tube core 200 that the structure of exposed portions serve A is arranged; The cutting method of Fig. 7 B can make the second surface 212 of transparency carrier 210 of second tube core 200 greater than first surface 211; But do not have exposed portions serve A, and the nicking method of Fig. 7 C combine above-mentioned both.Wafer Engraving machine or laser that cutting can have diamond cutter carry out.Can be during cutting along the gyratory directions of diamond cutter, add the cutting water of a certain amount of level pressure by the side, the chip that cuts is cleaned in the heating when suppressing cutting simultaneously.
More than the characteristic and spirit of detailed description in order to more clearly to describe this creation of preferred specific embodiment, but not in order to limit the category of this creation.The category of the claim of this creation should be done the broadest explanation according to above-mentioned explanation, contain the change that might be equal to and arrangement with identity property.
Claims (39)
1. light-emitting device comprises:
Transparency carrier;
Transparent bonding layer is positioned at said transparency carrier top;
The multilayer epitaxial layer is positioned at said transparent bonding layer top, and said multilayer epitaxial layer comprises luminescent layer;
First electrode is positioned at said transparent bonding layer top; And
Second electrode is positioned at said multilayer epitaxial layer top;
Wherein, the first surface that said transparency carrier has towards said transparent bonding layer reaches and said first surface opposing second surface, and the ratio of the area of said second surface and the area of said luminescent layer is not less than 1.6.
2. light-emitting device as claimed in claim 1 also comprises the reflector of position in the side of said second surface.
3. light-emitting device as claimed in claim 1, the area of wherein said second surface is greater than the area of said first surface.
4. light-emitting device as claimed in claim 1, the area ratio of wherein said second surface and said first surface is between 4～20.
5. light-emitting device as claimed in claim 1, wherein said first surface also comprise the exposed portions serve that is not covered by said luminescent layer.
6. light-emitting device as claimed in claim 1, wherein said transparent bonding layer top also comprises first transparency conducting layer.
7. light-emitting device as claimed in claim 6, wherein said first transparency conducting layer is selected from the group that tin indium oxide, cadmium tin, zinc oxide or zinc-tin oxide are formed.
8. light-emitting device as claimed in claim 1 also comprises second transparency conducting layer between wherein said second electrode and the said multilayer epitaxial layer.
9. light-emitting device as claimed in claim 8, wherein said second transparency conducting layer is selected from the group that tin indium oxide, cadmium tin, zinc oxide or zinc-tin oxide are formed.
10. light-emitting device as claimed in claim 1, wherein said multilayer epitaxial layer comprises contact layer and bond course.
11. light-emitting device as claimed in claim 10, wherein said contact layer is selected from the group that GaP, GaAs, GaAsP form.
12. light-emitting device as claimed in claim 1, wherein said transparent bonding layer are selected from spin-coating glass, silicones, benzocyclobutane, epoxy resin, polyimides, reached the group that the fluorine cyclobutane is formed.
13. a method that forms light-emitting device comprises:
Temporary substrate is provided, and said temporary substrate top has the multilayer epitaxial layer and first transparency conducting layer;
Cut said temporary substrate, forming first tube core, said first tube core comprises said first transparency conducting layer, and the said temporary substrate of a part of said multilayer epitaxial layer, the part of a part;
Transparency carrier is provided, and said transparency carrier top has transparent bonding layer;
Said first tube core is fixed on said transparent bonding layer top;
Cut said transparency carrier; To form second tube core; Said second tube core comprise said first tube core, a part said transparent bonding layer, and a part said transparency carrier, wherein, the transparency carrier of said second tube core has the first surface towards said transparent bonding layer; Reach the second surface with respect to said first surface, the ratio of the area of the luminescent layer in the area of said second surface and said second tube core is not less than 1.6.
14. method as claimed in claim 13, wherein, said first tube core is fixed on above the said transparent bonding layer after, also comprise: the said temporary substrate that removes said first tube core.
15. method as claimed in claim 14 after the said temporary substrate that removes said first tube core, also comprises:
The part of the multilayer epitaxial layer of said first tube core of etching is to expose said first transparency conducting layer;
Above said first transparency conducting layer that exposes, form first electrode; And
Above the multilayer epitaxial layer of said first tube core, form second electrode.
16. method as claimed in claim 13, wherein, said first tube core is separately fixed at above the said transparent bonding layer after, also comprise: remove the non-said transparent bonding layer that is covered by said first tube core.
17. method as claimed in claim 13, wherein said first surface also comprise the exposed portions serve that is not covered by said luminescent layer.
18. method as claimed in claim 13, also comprising provides the reflector that is arranged in the side of said second surface.
19. method as claimed in claim 13, wherein, said cutting is carried out through diamond cutter or laser.
20. method as claimed in claim 13, the area of wherein said second surface is greater than the area of said first surface.
21. method as claimed in claim 13, the area ratio of wherein said second surface and said first surface is between 4～20.
22. method as claimed in claim 13, wherein said multilayer epitaxial layer comprises contact layer and bond course.
23. method as claimed in claim 22, wherein said contact layer is selected from the group that GaP, GaAs, GaAsP form.
24. method as claimed in claim 13, wherein said first transparency conducting layer is selected from the group that tin indium oxide, cadmium tin, zinc oxide or zinc-tin oxide are formed.
25. method as claimed in claim 15 also is included in and forms second transparency conducting layer between the multilayer epitaxial layer of said second electrode and said first tube core.
26. method as claimed in claim 25, wherein said second transparency conducting layer is selected from the group that tin indium oxide, cadmium tin, zinc oxide or zinc-tin oxide are formed.
27. method as claimed in claim 13, wherein said transparent bonding layer are selected from spin-coating glass, silicones, benzocyclobutane, epoxy resin, polyimides, reached the group that the fluorine cyclobutane is formed.
28. a method that forms light-emitting device comprises:
Transparency carrier is provided, and said transparency carrier top has light-emitting component, and said light-emitting component comprises: transparent bonding layer is positioned at the top of said transparency carrier; The multilayer epitaxial layer is positioned at said transparent bonding layer top; First electrode is positioned at said transparent bonding layer top; And second electrode, the position is above said multilayer epitaxial layer;
Cut said transparency carrier, so that said transparency carrier is not less than 1.6 away from the ratio of the area of the area of the second surface of said transparent bonding layer and the luminescent layer in the said multilayer epitaxial layer.
29. method as claimed in claim 28 also comprises the reflector that the side that is arranged at said second surface is provided.
30. method as claimed in claim 28, wherein said light-emitting component also comprise first transparency conducting layer between said first electrode and said transparent bonding layer.
31. method as claimed in claim 30, wherein said first transparency conducting layer is selected from the group that tin indium oxide, cadmium tin, zinc oxide or zinc-tin oxide are formed.
32. method as claimed in claim 28, wherein said light-emitting component also comprise second transparency conducting layer between said second electrode and said multilayer epitaxial layer.
33. method as claimed in claim 32, wherein said second transparency conducting layer is selected from the group that tin indium oxide, cadmium tin, zinc oxide or zinc-tin oxide are formed.
34. method as claimed in claim 28, wherein, said cutting is carried out through diamond cutter or laser.
35. method as claimed in claim 28, wherein said transparency carrier has the first surface with respect to said second surface, and the area ratio of said second surface and said first surface is between 4～20.
36. method as claimed in claim 35, wherein said first surface also comprise the exposed portions serve that is not covered by said luminescent layer.
37. method as claimed in claim 28, wherein said multilayer epitaxial layer comprises contact layer and bond course.
38. method as claimed in claim 37, wherein said contact layer is selected from the group of being made up of GaP, GaAs, GaAsP.
39. method as claimed in claim 28, wherein said transparent bonding layer are selected from spin-coating glass, silicones, benzocyclobutane, epoxy resin, polyimides, reached the group that the fluorine cyclobutane is formed.
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|---|---|---|---|
| CN2006100045968A CN101017865B (en) | 2006-02-06 | 2006-02-06 | Lighting device and its making method |
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| CN103196056A (en) * | 2013-03-29 | 2013-07-10 | 郑香奕 | LED (light-emitting diode) mirror plane light source body and production process thereof |
| US20190259923A1 (en) * | 2018-02-22 | 2019-08-22 | Epistar Corporation | Light-emitting device |
| CN110034212A (en) * | 2019-04-26 | 2019-07-19 | 中国科学院长春光学精密机械与物理研究所 | The preparation method and transfer method of vertical structure bar shaped Micro-LED |
| WO2023082074A1 (en) * | 2021-11-10 | 2023-05-19 | 厦门三安光电有限公司 | Light-emitting diode and light-emitting apparatus |
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| CN1355570A (en) * | 2000-11-27 | 2002-06-26 | 国联光电科技股份有限公司 | LED and its preparing process |
| CN1368764A (en) * | 2001-01-31 | 2002-09-11 | 广镓光电股份有限公司 | Structure of hihg-brightness blue light emitting crystal grain |
| US6737679B2 (en) * | 2002-10-11 | 2004-05-18 | Highlink Technology Corporation | Optoelectronic unit and transparent conductive substrate of the same |
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Application publication date: 20070815 Assignee: Foshan Electric Lighting Co., Ltd. Assignor: Jingyuan Optoelectronics Co., Ltd. Contract record no.: 2016990000174 Denomination of invention: Organic plane lumination device and mfg method thereof Granted publication date: 20120111 License type: Common License Record date: 20160503 |
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