CN101016438A - Alkaline computer hard disk polishing liquid and producing method thereof - Google Patents
Alkaline computer hard disk polishing liquid and producing method thereof Download PDFInfo
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- CN101016438A CN101016438A CN 200710019741 CN200710019741A CN101016438A CN 101016438 A CN101016438 A CN 101016438A CN 200710019741 CN200710019741 CN 200710019741 CN 200710019741 A CN200710019741 A CN 200710019741A CN 101016438 A CN101016438 A CN 101016438A
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Abstract
The invention discloses a preparing method of alkality computer hard disk polishing liquid in chemical preparation domain, which comprises the following steps: setting pH value of polishing liquid at 7-10; making the mass percent of oxidant, organic complexing agent and grinding agent at 0.1%-5%, 0.1%-5% and 0.5%-20% separately; composing ingredient A with diamond pyramid hardness bigger than 7 and ingredient B with diamond pyramid hardness bigger than 5; getting grinding agent; forming oxidant, organic metal chelating agent, high hardness and low hardness rubbing agent in neutral and alkality agent; adopting soft and hard merging multiple polished rubbing particle method; decreasing grievous fish tail caused by big particle boule aluminum oxide; increasing graduation efficiency; This invention adopts alkality polishing agent, which decreases the polishing loss of hard disk edge.
Description
Technical field
The present invention relates to the production technique of a kind of production field of chemicals, particularly computer hard disk polishing liquid.
Background technology
The current computer hard disk polishing liquid is mainly done the polishing friction agent with macrobead corundum aluminum oxide, especially just throws product, causes equipment corrosion easily, and the serious work piece surface that also causes scratches, and defective such as the graduation polishing efficiency is low.Widely used in the market hard disc of computer is just thrown the very long smart throwing time in second step of polishing product needed usefulness that the polishing fluid product is produced.Long-time polishing often causes serious edge penalty, and residual serious damage be difficult in smart throwing process of second step, eliminate, reduce polishing efficiency greatly, increase production cost.
Summary of the invention
The present invention seeks to provides the alkaline computer hard disk polishing liquid that a kind of surface nothing scratches, polishing efficiency is high for hard disc of computer.
The present invention mainly is made up of water, oxygenant, organic complexing agent and abrasive, and the pH value is 7～10; Oxygenant, organic complexing agent and abrasive account for 0.1%～5%, 0.1%～5%, 0.5%～20% of polishing fluid total mass respectively; Described abrasive is made up of less than 5 B component greater than 7 component A and Vickers' hardness Vickers' hardness, and the mass ratio of component A and B component is 1: 0.1～75 in the abrasive.
Neutrality that the present invention forms and the oxygenant in the alkaline medium, Organometallic complex agent, high rigidity and soft are mixed the friction agent of forming, and adopt the method for the multiple polishing friction particles of hard soft merger to reduce serious damage and the raising graduation efficient that macrobead corundum aluminum oxide is caused.The alkaline polishing medium is adopted in this invention, and its brand-new polishing mechanism greatly reduces the polishing loss to the hard disk edge.And in this medium, polish, polishing machine without any corrosion effect, has been strengthened the life-span of polishing machine.
Component A is a hardness greater than 7 material, and B component is a hardness less than 5 material, and two kinds of ratios that different hardness is suitable are beneficial to grinding.
Each suitable raw material ratio, purpose are to reduce the surface tear to the polishing material that the hard shredder is caused, and guarantee that polishing fluid has high polishing rate of cutting, improve the graduation efficient of polishing fluid.
Said components A of the present invention is crystal formation aluminum oxide or cerium oxide or its mixture; B component be in silicon oxide, titanium oxide, zirconium white, diamond, wilkinite, carbon fiber, the expanded graphite at least any one.
Also can contain 0.00001%～1% the tensio-active agent that accounts for the polishing fluid total mass among the present invention.Can further improve the graduation polishing efficiency of this rumbling compound.
Oxygenant of the present invention can in iron nitrate, manganate, super manganate, chromic salt, super chromic salt, oxymuriate, super oxymuriate, iodate, super iodate, peroxysulphate, peroxide borate, Peracetic Acid, the peroxide isopropylformic acid at least any one.
Organic complexing agent of the present invention can in organic amine, organic acid, amino acid, organophosphorus, organic sulfate, the sulfonate at least any one or multiple.
Tensio-active agent also is the metal complex membrane-forming agent, can in sulfonate, ammonium salt, phosphate surfactant active, the ether epoxy fat tensio-active agent at least any one.
In addition, the present invention also provides the production method of above-mentioned two kinds of alkaline computer hard disk polishing liquids.
Method one: in liquid water, add oxygenant, organic complexing agent and abrasive, stir, transfer pH to 7～10, promptly make.
Method two: in liquid water, add organic complexing agent and abrasive earlier, stir, transfer pH to 7～10; Then before use, add oxygenant again, stir.
More than in two kinds of methods, reinforced time ordered pair the finished product do not have influence clearly.The present invention is simple, be easy to produce handled easily.
Before adjust pH, in mixed solution, also add tensio-active agent.Also can directly add in the entry.
The 3rd purpose of the present invention is: the using method of invention alkaline computer hard disk polishing liquid.
Be used for the polishing of metallic surface, comprise nickel, copper, aluminium, tungsten, gold, platinum etc., and the surface finish of metal alloy.
Embodiment
Example one:
In the 6345g deionized water for stirring, add oxygenant peroxide potassium borate 160g.After the dissolving, make the peroxide potassium borate aqueous solution.In the peroxide potassium borate aqueous solution, add 160g organic complexing agent citric acid, stirred ten minutes, add 533g concentration again and be 30% abrasive crystal formation aluminum oxide aluminum oxide suspension, and 800g, mean particle size are that 80nm, concentration are 30% abrasive silicon sol.Stir.
As required, add one or more polymeric surface active agent metal complex membrane-forming agents 0～10g again.
At last, adopt phosphoric acid that the pH of suspension value is transferred to 9, the 8000g alkaline computer hard disk polishing liquid.
Example two:
In the 6344g deionized water for stirring, add 160g organic complexing agent citric acid, stirred ten minutes, add 533g concentration again and be 30% abrasive cerium oxide, and 800g, fineness are that 80nm, concentration are 30% abrasive silicon sol.Stir.
As required, add one or more polymeric surface active agent metal complex membrane-forming agents 1g again.
Adopt phosphoric acid that the pH of suspension value is transferred to 8.5.
Before use, add oxygenant peroxide potassium borate 160g again, stir, the 8000g alkaline computer hard disk polishing liquid.
Other each examples mode are successively prepared in proportion.
In last two examples, oxygenant can be in iron nitrate, manganate, super manganate, chromic salt, super chromic salt, oxymuriate, super oxymuriate, iodate, super iodate, peroxysulphate, peroxide borate, Peracetic Acid, the peroxide isopropylformic acid one or more.Organic complexing agent can in organic amine, organic acid, amino acid, organophosphorus, organic sulfate, the sulfonate at least any one or multiple.
Abrasive is made up of component A and B component: component A is crystal formation aluminum oxide or cerium oxide or crystal formation aluminum oxide and cerium oxide.
B component be in silicon oxide, titanium oxide, zirconium white, diamond, wilkinite, carbon fiber, the expanded graphite at least any one.
The mass ratio of component A and B component can be 1: 0.1～1: 75.
Tensio-active agent can be in sulfonate, ammonium salt, phosphate surfactant active, the ether epoxy fat tensio-active agent one or more.
Specific product proportioning raw materials and product performance see the following form:
| Example | Oxygenant (%) | Organic complexing agent (%) | Abrasive component A (%) | Abrasive component B (%) | Tensio-active agent (%) | The pH value | RR (mg/min) | Surface property |
| 1 | 2 | 2 | 2 | 3 | 0 | 9 | 52 | O |
| 2 | 2 | 5 | 18.2 | 1.8 | 0.01 | 8.5 | 69 | O |
| 3 | 0.1 | 2 | 0.2 | 0.3 | 0.00001 | 9 | 22 | O |
| 4 | 5 | 1 | 10 | 5 | 0.01 | 7 | 35 | O |
| 5 | 2 | 0.1 | 1 | 5 | 0.001 | 8 | 28 | O |
| 6 | 1 | 1.5 | 0.27 | 19.73 | 1 | 10 | 32 | O |
Speedfam 9B-5P, rotating speed 55RPM turns to Clock Wise, Sun Gear/Rain Gear rotating ratio 1, polishing fluid flow 100ml/min presses down 0.1kg/cm2, groove CR-200 polishing pad
The NiP surface of throwing does not have very dark scuffing, does not have other defect yet.Surfaceness is about 3 , and the microwave degree is less than 3 .
The present invention can be used for the polishing of metallic surface, comprises nickel, copper, aluminium, tungsten, gold, platinum etc., and the surface finish of metal alloy.
Polishing fluid is wanted simultaneously abrasive (silicon oxide and aluminum oxide) again, oxygenant, and membrane-forming agent can obtain high polishing and efficient, and high-quality glazed surface performance.
Claims (10)
1, alkaline computer hard disk polishing liquid is characterized in that mainly being made up of water, oxygenant, organic complexing agent and abrasive, and the pH value is 7～10; Oxygenant, organic complexing agent and abrasive account for 0.1%～5%, 0.1%～5%, 0.5%～20% of polishing fluid total mass respectively; Described abrasive is made up of less than 5 B component greater than 7 component A and Vickers' hardness Vickers' hardness, and the mass ratio of component A and B component is 1: 0.1～75 in the abrasive.
2,, it is characterized in that component A is crystal formation aluminum oxide or cerium oxide or its mixture according to the described alkaline computer hard disk polishing liquid of claim 1.
3, according to the described alkaline computer hard disk polishing liquid of claim 1, it is characterized in that B component be in silicon oxide, titanium oxide, zirconium white, diamond, wilkinite, carbon fiber, the expanded graphite at least any one.
4,, it is characterized in that also containing 0.00001%～1% the tensio-active agent that accounts for the polishing fluid total mass according to the described alkaline computer hard disk polishing liquid of claim 2.
5, according to claim 1 or 2 or 3 or 4 described alkaline computer hard disk polishing liquids, it is characterized in that described oxygenant is iron nitrate, aluminum nitrate, in manganate, super manganate, chromic salt, super chromic salt, oxymuriate, super oxymuriate, iodate, super iodate, peroxysulphate, peroxide borate, Peracetic Acid, the peroxide isopropylformic acid at least any one.
6, according to claim 1 or 2 or 3 or 4 described alkaline computer hard disk polishing liquids, it is characterized in that described organic complexing agent be in organic amine, organic acid, amino acid, organophosphorus, organic sulfate, the sulfonate at least any one or multiple.
7, according to the described alkaline computer hard disk polishing liquid of claim 3, it is characterized in that described tensio-active agent be in sulfonate, ammonium salt, phosphate surfactant active, the ether epoxy fat tensio-active agent at least any one.
8, a kind of production method of alkaline computer hard disk polishing liquid according to claim 1 is characterized in that adding oxygenant, organic complexing agent and abrasive in liquid water, stirs, and transfers pH to 7～10, promptly makes; Or in liquid water, add organic complexing agent and abrasive earlier, and stir, transfer pH to 7～10, then before use, add oxygenant again, stir.
9, the production method of described alkaline computer hard disk polishing liquid according to Claim 8 is characterized in that before adjust pH, also adds tensio-active agent in mixed solution.
10, a kind of using method of alkaline computer hard disk polishing liquid according to claim 1 is characterized in that described polishing fluid is used for the polishing on metal or alloy surface.
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| CN 200710019741 CN101016438A (en) | 2007-02-09 | 2007-02-09 | Alkaline computer hard disk polishing liquid and producing method thereof |
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| CN 200710019741 CN101016438A (en) | 2007-02-09 | 2007-02-09 | Alkaline computer hard disk polishing liquid and producing method thereof |
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| CN101016438A true CN101016438A (en) | 2007-08-15 |
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Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102093816A (en) * | 2009-12-11 | 2011-06-15 | 安集微电子（上海）有限公司 | Chemical mechanical polishing liquid |
| CN102311706A (en) * | 2010-06-30 | 2012-01-11 | 中国科学院微电子研究所 | Nano-grade polishing solution and preparation method thereof |
| CN102311717A (en) * | 2010-06-30 | 2012-01-11 | 中国科学院微电子研究所 | High-hardness micron grinding fluid and preparation method thereof |
| CN102120928B (en) * | 2010-01-08 | 2013-11-06 | 中芯国际集成电路制造(上海)有限公司 | Chemical-mechanical grinding material and chemical-mechanical grinding method |
| CN103503118A (en) * | 2011-06-03 | 2014-01-08 | 旭硝子株式会社 | Polishing agent and polishing method |
| WO2014006546A3 (en) * | 2012-07-06 | 2014-02-27 | Basf Se | Chemical mechanical polishing composition comprising non-ionic surfactant and aromatic compound comprising at least one acid group |
| CN103937414A (en) * | 2014-04-29 | 2014-07-23 | 杰明纳微电子股份有限公司 | Fine polishing liquid for hard disk substrate of computer |
| CN105086834A (en) * | 2014-12-19 | 2015-11-25 | 李立群 | Polishing solution for computer hard disk and preparation method thereof |
| CN105950022A (en) * | 2016-07-22 | 2016-09-21 | 成都贝瑞光电科技股份有限公司 | Compound polishing liquid |
| CN106883768A (en) * | 2017-04-20 | 2017-06-23 | 宁波日晟新材料有限公司 | Alkali glass polishing fluid and application under slightly acidic condition |
| CN106978091A (en) * | 2017-04-20 | 2017-07-25 | 宁波日晟新材料有限公司 | Efficient hardening oxidation zircon ceramic polishing fluid and preparation method thereof |
| WO2018014568A1 (en) * | 2016-07-19 | 2018-01-25 | 常州亿晶光电科技有限公司 | New process for copper polishing processing of sapphire wafer |
| CN110499103A (en) * | 2019-09-12 | 2019-11-26 | 江苏吉星新材料有限公司 | A kind of sapphire lapping liquid and preparation method thereof |
| CN111019606A (en) * | 2019-12-20 | 2020-04-17 | 新华手术器械有限公司 | Stainless steel grinding agent and preparation method and application thereof |
| CN113249035A (en) * | 2020-02-10 | 2021-08-13 | 中国科学院长春光学精密机械与物理研究所 | Chemical mechanical polishing liquid and application thereof |
| CN115895454A (en) * | 2022-11-22 | 2023-04-04 | 天津派森新材料技术有限责任公司 | Chemical mechanical polishing solution |
| CN116023907A (en) * | 2023-02-16 | 2023-04-28 | 西南交通大学 | Polishing solution for flattening copper/nickel microstructure and application thereof |
| CN116144270A (en) * | 2023-02-20 | 2023-05-23 | 湖南三安半导体有限责任公司 | Polishing solution and preparation method thereof |
-
2007
- 2007-02-09 CN CN 200710019741 patent/CN101016438A/en active Pending
Cited By (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102093816B (en) * | 2009-12-11 | 2017-02-22 | 安集微电子（上海）有限公司 | Chemical mechanical polishing liquid |
| CN102093816A (en) * | 2009-12-11 | 2011-06-15 | 安集微电子（上海）有限公司 | Chemical mechanical polishing liquid |
| CN102120928B (en) * | 2010-01-08 | 2013-11-06 | 中芯国际集成电路制造(上海)有限公司 | Chemical-mechanical grinding material and chemical-mechanical grinding method |
| CN102311706A (en) * | 2010-06-30 | 2012-01-11 | 中国科学院微电子研究所 | Nano-grade polishing solution and preparation method thereof |
| CN102311717A (en) * | 2010-06-30 | 2012-01-11 | 中国科学院微电子研究所 | High-hardness micron grinding fluid and preparation method thereof |
| CN102311706B (en) * | 2010-06-30 | 2013-07-03 | 中国科学院微电子研究所 | Nano-grade polishing solution and preparation method thereof |
| CN102311717B (en) * | 2010-06-30 | 2013-07-03 | 中国科学院微电子研究所 | High-hardness micron grinding fluid and preparation method thereof |
| CN103503118A (en) * | 2011-06-03 | 2014-01-08 | 旭硝子株式会社 | Polishing agent and polishing method |
| CN103503118B (en) * | 2011-06-03 | 2016-01-20 | 旭硝子株式会社 | Abrasive and Ginding process |
| WO2014006546A3 (en) * | 2012-07-06 | 2014-02-27 | Basf Se | Chemical mechanical polishing composition comprising non-ionic surfactant and aromatic compound comprising at least one acid group |
| CN103937414B (en) * | 2014-04-29 | 2018-03-02 | 杰明纳微电子股份有限公司 | A kind of precise polishing solution of hard disc of computer disk substrate |
| CN103937414A (en) * | 2014-04-29 | 2014-07-23 | 杰明纳微电子股份有限公司 | Fine polishing liquid for hard disk substrate of computer |
| CN105086834A (en) * | 2014-12-19 | 2015-11-25 | 李立群 | Polishing solution for computer hard disk and preparation method thereof |
| WO2018014568A1 (en) * | 2016-07-19 | 2018-01-25 | 常州亿晶光电科技有限公司 | New process for copper polishing processing of sapphire wafer |
| CN105950022A (en) * | 2016-07-22 | 2016-09-21 | 成都贝瑞光电科技股份有限公司 | Compound polishing liquid |
| CN106883768A (en) * | 2017-04-20 | 2017-06-23 | 宁波日晟新材料有限公司 | Alkali glass polishing fluid and application under slightly acidic condition |
| CN106978091A (en) * | 2017-04-20 | 2017-07-25 | 宁波日晟新材料有限公司 | Efficient hardening oxidation zircon ceramic polishing fluid and preparation method thereof |
| CN110499103A (en) * | 2019-09-12 | 2019-11-26 | 江苏吉星新材料有限公司 | A kind of sapphire lapping liquid and preparation method thereof |
| CN111019606A (en) * | 2019-12-20 | 2020-04-17 | 新华手术器械有限公司 | Stainless steel grinding agent and preparation method and application thereof |
| CN111019606B (en) * | 2019-12-20 | 2021-03-30 | 新华手术器械有限公司 | Stainless steel grinding agent and preparation method and application thereof |
| CN113249035A (en) * | 2020-02-10 | 2021-08-13 | 中国科学院长春光学精密机械与物理研究所 | Chemical mechanical polishing liquid and application thereof |
| CN113249035B (en) * | 2020-02-10 | 2024-05-24 | 长春长光圆辰微电子技术有限公司 | Chemical mechanical polishing solution and application thereof |
| CN115895454A (en) * | 2022-11-22 | 2023-04-04 | 天津派森新材料技术有限责任公司 | Chemical mechanical polishing solution |
| CN115895454B (en) * | 2022-11-22 | 2024-07-23 | 天津派森新材料技术有限责任公司 | Chemical mechanical polishing solution |
| CN116023907A (en) * | 2023-02-16 | 2023-04-28 | 西南交通大学 | Polishing solution for flattening copper/nickel microstructure and application thereof |
| CN116144270A (en) * | 2023-02-20 | 2023-05-23 | 湖南三安半导体有限责任公司 | Polishing solution and preparation method thereof |
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