CN1008305B - 用三硼酸锂单晶体制造的非线性光学器件 - Google Patents

用三硼酸锂单晶体制造的非线性光学器件

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CN1008305B
CN1008305B CN88102084A CN88102084A CN1008305B CN 1008305 B CN1008305 B CN 1008305B CN 88102084 A CN88102084 A CN 88102084A CN 88102084 A CN88102084 A CN 88102084A CN 1008305 B CN1008305 B CN 1008305B
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陈创天
江爱栋
吴以成
吴柏昌
尤桂铭
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Fujian Castech Crystals Inc
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Abstract

本发明涉及一种具有高转换效率、对光束发散度要求低的大功率非线性光学器件。该光学器件中的非线性光学晶体为LiB3O5单晶体。本发明的非线性光学器件(包括波导元件)对晶体加工精度的要求低,并能产生波长短于2000A°的相干光输出。

Description

本发明涉及一种用化合物单晶体制造的非线性光学器件,特别是用LiB3O5单晶体制造的非线性光学器件。
通常将具有非零二级极化率的晶体称为非线性光学晶体。这类晶体在强激光照射下会产生倍频、和频、差频、参量放大等非线性光学效应。关于如何利用这类晶体产生有效的倍频、频率上、下转换和参量放大输出,美国专利No.3262058、No.3328723及No.3747022中已作了说明。
已知在激光束的入射功率Iin较小:大部分基波光功率未转换成其它激光功率时,非线性光学晶体对激光功率的转换效率
其中,Iout为激光束的出射功率;
Iin为激光束的入射功率;
deff为有效倍频系数;
l    为晶体厚度;
△k=k3-(k1±k3),称为相位失配度。
相干长度定义为lc=π/△k。
当△k=0时,lc=∝,Sinc2(△kl)=1,转换效率η达到最大值,这种情况即称为相位匹配。
存在着两种类型的相位匹配方式:Ⅰ型和Ⅱ型,前者指入射光波具有相同的偏振方向,后者指入射光波偏振方向正交。
通常有四种实现相位匹配的方法(参见美国专利No.3949323),最常用的方法是通过变化晶体取向以达到相位匹配。
限制相位匹配的因素有二。其一是所谓的光束离散(Walk    off)效应,它是因晶体双折射的影响致使相互作用光波的能流方向和相位方向不一致而引起的。其二,由于激光束有一定的发散度,从而当激光束沿晶体的相位匹配方向入射时产生部分相位失配。
对于单轴晶体,相位匹配只与θ角有关,θ角是晶体的光轴和入射光方向之间的夹角。因此,相位失配度
Figure 88102084_IMG3
由上式可以看出,δθ增大将引起△k增大、lc减小,从而使转换效率η下降。一般将光的出射功率降至峰值的0.405(e-1)时的θ角变化δθ称为角度调谐半宽度(acceptanceangle,又称可接受角)。若能使 (αk)/(αθ) |θpm=0,则△k仅与δθ2成正比,而对θ的变化不再敏感。
对于双轴晶体,相位匹配由θ、φ角共同决定 (φ角为光束的入射方向与结晶轴a的夹角),因此,△k与δθ、δ均有关。此时,通常固定其中一个角度,然后测定另一角的角度调谐半宽度。一般取其中较小者定义为双轴晶体的角度调谐半宽度。关于双轴晶体中相位匹配的讨论已由Hobden给出(M.V.Hobden,J.Appl.Phys。384365。1967)。
目前,普遍使用的非线性光学晶体主要有KDP、Urea、KTP、KB5O3·4H2O等,它们的共同缺点是:①不能产生低于2000A°的紫外光输出(波长在2000A′以下的激光在激光光谱等方面有重要应用);②光损伤阈值不够高,例如KDP的光损伤阈值为7GW/cm2(lns,λ=1.064μm);③角度调谐半宽度较小,例如KDP晶体的角度调谐半宽度仅为1.0mrad/cm;④化学稳定性不好,在空气中会潮解。因此,用现有的上述非线性光学晶体制备的非线性光学器件在耐受功率、对激光束发散度的严格要求以及转换波长等方面还存在有若干缺点。因而有必要发展能克服上述缺点的非线性光学器件。
德国的《无机和普遍化学杂志》439(1978),71.和日本的《窑业协会会志》88(1980),179,上均报导过化合物晶体LiB3O5的晶体结构。该晶体属于正交晶系、Pna21空间群,其晶胞参数a=8.446,b=7.378,c=5.141,每个晶胞含4个LiB3O5化学式,其密度为2.478g/cm3。根据上述杂志报导,所得单晶的大小为1×1×4mm3。迄今为止,还没有关于得到大小足以供实际应用的LiB3O5单晶的报导。此外,也无报导指出过LiB3O5晶体具有非线性光学性能。
本发明的目的是提供一种具有高转换效率、对光束的发散度要求低并能耐大功率的非线性光学器件;
本发明的第二个目的是提供一种能产生波长短于2000A°的相干光输出的非线性光学器件;
本发明的第三个目的是提供一种截面大于等于70mm的大型倍频、三倍频光学器件;
本发明的第四个目的是提供一种能产生波长短于2000A°的相干光输出的光波导器件。
本发明的上述目的是通过由LiB3O5化合物晶体制备的非线性光学器件来实现的。本发明者用熔盐籽晶法已获得了大小为20×35×9mm3的可供实际生产使用的LiB3O5单晶体。
本发明采用LiB3O5单晶体制成的非线性光学器件克服了现有技术中用KDP、Urea等晶体所造器件的缺点,本发明的非线性光学器件能耐受的功率大(可达到20GW/cm2,lns,λ=1.064μm)、转换效率高,而且对入射光束的发射度要求低(对激光束的发散度可允许到几十个mrad)。本发明的非线性光学波导器件能输出波长短于2000A°的相干紫外光,这为制造输出相干光波长在2000A°以下的集成光学器件提供了基础。用LiB3O5晶体还能制造出大截面的非线性光学器件。
本发明者在研究中已发现,化学式为LiB3O5的化合物晶体是一种新的具有非线性光学性质的晶体。LiB3O5晶体的点群对称为mm2,是双光轴晶体。该晶体在0.16~2.6μm的波长范围内无任何吸收。
LiB3O5晶体有五个非零的二级极化率。本发明者对LiB3O5晶体在ω1=ω2(λ=1.06μm),ω3=2ω1(λ=0.53μm)时的二级极化率(此时称倍频系数)进行了测量,其结果如下:
d31=±2.82(1±0.08)×10-9esu
d32=±3.39(1±0.08)×10-9esu
d33=±0.53(1±0.10)×10-9esu
d15≈d31
d24≈d32
本发明者利用最小偏向角测定了LiB3O5晶体从1.06~0.2537μm之间16个波长下的主折射率,拟合得到了Sellmeire方程:
Figure 88102084_IMG4
其中λ为入射光波长,单位为μm。
本发明者还测量了LiB3O5晶体在θ≠90°和θ=90°时的角度调谐曲线,从而得到了LiB3O5晶体的角度调谐半宽度分别为:
25mrad    (θ≠90°)
95mrad    (θ=90°)
与现有技术中常用的KDP、Urea等晶体相比,LiB3O5晶体的角度调谐半宽度要大得多,这就使LiB3O5晶体在入射光具有相同发射度时,相位失配 度比其它晶体小,所以用LiB3O5晶体可以得到具有大发散度、高度聚焦的激光装置中的谐波转换器件。在由小截面晶体谐波转换器件拼接成大截面晶体谐波转换器件的过程中,角度调谐半宽度大还降低了对晶体加工精度的苛刻要求。例如,在采用KDP晶体制造大截面倍频器件时,要用多块晶体进行拼接,由于KDP晶体的角度调谐半宽度为1mrad/cm,所以拼接时要求每块晶体的加工精度必须达到分级。而采用LiB3O5晶体进行拼接时,每块晶体的轴向加工精度只要求达到度级即可满足拼接要求,因此,用9块大小适当的LiB3O5晶体即可拼接出70×70mm2的大截面倍频器件。
本发明者使用Nd∶YAG锁模激光器,在0.1ns,λ=1.064μm的条件下测得LiB3O5晶体的光损伤阈值为25GW/cm2,是在同样条件下测得的KDP晶体的光损伤阈值的3.6倍。因此,用LiB3O5晶体制造的非线性化学器件可用于高功率或高平均功率的激光装置,如用于激光受控热该反应装置等。
由于LiB3O5晶体在0.16~2.6μm的波长范围内无任何吸收,所以用这种晶体制成的非线性光学器件能够在0.375~3.0μm的输入波长范围内工作,也就是说可以输出波长短于2000A°的紫外光。
本发明者将用熔盐籽晶法生长得到的LiB3O5单晶体作抛光处理后放入水中(常温),经过一个月仍观察不到其光洁度有任何变化,因此其化学稳定性高,不潮解,用如此获得的LiB3O5晶体制成的光学器件可在无任何保护措施的情况下使用。
下面结合附图对本发明作详细说明。其中图1为典型的本发明LiB3O5晶体制成的非线性光学器件的工作原理图;图2为用LiB3O5晶体制成的谐波波导元件的工作原理示意图。
如图1所示,由YAG激光器(1)输出的光束沿竖直方向偏振,经过聚焦棱镜(2)入射到LiB3O5晶体(3)中,晶体这样放置:使其结晶学b轴与入射光的极化方向相同(即沿竖直方向),同时使其结晶学a轴与光束入射方向成φ角,该φ角可由下列联立方程求出:
方程中的n x、n y及nω z可由(3)式得出。由上式计算得出,当入射光的波长为1.06μm时,φ=10.73°。由晶体(3)中射出的光束增加了倍频光的成分。使该光束经过准直棱镜(5),再通过滤波片(6)吸收或反射掉基波光,从而得到沿水平方向偏振的倍频光。其中取消棱镜(2),和/或用分光棱镜代替滤波片(6)均不改变本非线性光学器件的工作原理。
图(2)中,在晶体(3)的上表面用离子取代或离子注入法形成有一个Li1-xMxB3O5波导区(4),其中M为Na、K等碱金属,0<x<1。衬底的取向是这样确定的:使晶体(3)的结晶学b轴平行于入射光的极化方向,而使结晶学a轴与入射光的通过方向成φ角,φ角由(4)式计算求出。当入射光波长为1.06μm时,φ=10.73°。这时,由图2所示的装置即可得到出射光波长为0.53μm的倍频光。其工作原理如下:由YAG激光器(1)输出的光束沿水平方向偏振,经过光束注入棱镜(2),按图所示方向入射到晶体(3)上表面的波导区(4),出射的基波光和倍频光通过准直棱镜(5)后变成准直光束,然后再通过滤波片(6)吸收或反射掉基波光,从而得到沿垂直方向偏振的倍频光。
实例1
将21.1克Li2CO3和141.2克H3BO3均匀混合后装入φ40×40mm3的铂坩埚,然后把坩埚装入晶体生长炉并用合适的保温材料(如Al2O3砖)将炉口封上,在与坩埚中心位置对应处留有一供籽晶杆自由出入的孔。将生长炉快速升温至950℃,恒温5小时,然后快速降温至848℃,将籽晶缓慢地经由上述孔导入坩埚,使之与液面接触并恒温半小时,再迅速降温至833℃,此后以0.5℃/天的速率把炉温降至180℃,生长结束,生长过程中晶体不转动。生长结束后将晶体提离液面,并以40℃/小时的速率降至室温,如此获得的透明LiB3O5单晶尺寸达18×20×6mm3
实例2
将40.6克Li2CO3、203.9克H3BO3和158.3克MoO3均匀混合后装入φ50×50mm3的铂坩埚中,然后把坩埚放入生长炉,用保温材料将炉口封上,在与坩埚中心位置对应处留有一供籽晶杆自由出入的孔。将炉温升至850℃,恒温5小时,然后降至673℃,将籽晶缓慢导入坩埚,使之与液面接触并恒温半小时,再降至670℃,此后,以5℃/天的速率将炉温降至580℃,生长结束。生长过程中籽晶杆一直以30rpm的速率转动。生长结束后,将晶体提高液面,并以 100℃/小时的速率退火至室温。结果得到尺寸达20×35×9mm3的透明LiB3O5单晶。
实例3
把按实例1的方法得到的原胚大小为15×15×10mm3的LiB3O5晶体按结晶轴a、b、c定向,按φ=10.73°的取向切出一块6×6×6mm3的晶体,将此晶体置于图1所示的光路中,使用光谱物理公司DCR2A型YAG激光器的输出作为光源(λ=1.064μm),其每个脉冲的脉宽为7ns,光斑面积为φ=4mm,当各个脉冲的脉冲能量达到190mj/pulse时,得到λ=0.53μm的倍频光输出。测定该非线性倍频器件的光入射功率与出射功率,求出其转换效率达59%(未加表面反射修正),满足实际使用的需要,比用同样大小的KDP晶体制成的倍频器件的转换效率高。
实例4
把用实例2的方法生长得到的原胚大小为20×20×9mm2的LiB3O5按结晶轴a、b、c定向,根据φ=10.73°的晶体取向切出一块9×9×6mm3的晶体,将该晶体置于图1所示的光路中,用调QYAG激光器输出作为光源(λ=1.064μm),每个脉冲的脉宽为7ns,光斑面积为φ=6mm,当每个脉冲能量达到195mj/pulse时,得到λ=0.53μm的倍频光输出。测定该非线性倍频器件的光入射功率与出射功率,求出其转换为65%(已作表面修正)。
本领域的普通技术人员使用类似的方法将不难用LiB3O5晶体设计制造出其它的非线性光学器件,如上、下频率转换器、光参量振荡器等,这些均不可能超出本发明的构思和范围。

Claims (7)

1、一种非线性光学器件,它包含将至少一束入射电磁辐射通过至少一块非线性光学晶体后产生至少一束频率不同于入射电磁辐射的输出辐射的装置,其特征在于:其中的非线性光学晶体为LiB3O5晶体。
2、如权利要求1所述的非线性光学器件,其特征在于:所述入射电磁辐射的波长范围为0.375~3.0μm。
3、如权利要求1所述的非线性光学器件,其特征在于:所述非线性光学晶体通过拼接技术使其截面大于等于70mm。
4、一种谐波波导元件,它包含将至少一束入射电磁辐射通过至少一块非线性光学晶体后产生至少一束频率不同于入射电磁辐射的输出辐射的装置,其特征在于:所述非线性光学晶体为LiB3O5晶体,其表面上有一波导区,所述入射电磁辐射通过该波导区。
5、一种如权利要求4所述的谐波波导元件,其特征在于:所述波导区是由离子取代或离子注入法形成的Li1-xMxB3O5(M=Na,K等碱金属,O<X<1)。
6、一种如权利要求4所述的谐波波导元件,其特征在于:所述入射电磁辐射的波长范围为0.375~3.0μm。
7、一种如权利要求1至6中任一项所述的非线性光学器件,其特征在于:所述的LiB3O5晶体是由熔盐籽晶法生长的。
CN88102084A 1988-04-14 1988-04-14 用三硼酸锂单晶体制造的非线性光学器件 Expired CN1008305B (zh)

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JP63116002A JPH0758378B2 (ja) 1988-04-14 1988-05-14 非線形光学的装置
US07/205,895 US4826283A (en) 1988-04-14 1988-06-13 LiB3 O5 crystal and its nonlinear optical devices

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US4826283A (en) 1989-05-02

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