CN100590850C - 全自对准条型栅功率垂直双扩散场效应晶体管的制作方法 - Google Patents
全自对准条型栅功率垂直双扩散场效应晶体管的制作方法 Download PDFInfo
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- CN100590850C CN100590850C CN200710122480A CN200710122480A CN100590850C CN 100590850 C CN100590850 C CN 100590850C CN 200710122480 A CN200710122480 A CN 200710122480A CN 200710122480 A CN200710122480 A CN 200710122480A CN 100590850 C CN100590850 C CN 100590850C
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- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 230000005669 field effect Effects 0.000 title claims description 14
- 238000009792 diffusion process Methods 0.000 title claims description 12
- 238000005530 etching Methods 0.000 claims abstract description 55
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 34
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 33
- 239000010941 cobalt Substances 0.000 claims abstract description 33
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 33
- 238000000151 deposition Methods 0.000 claims abstract description 31
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 25
- 238000001259 photo etching Methods 0.000 claims abstract description 22
- 229910052796 boron Inorganic materials 0.000 claims abstract description 19
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229920005591 polysilicon Polymers 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 238000002347 injection Methods 0.000 claims abstract description 14
- 239000007924 injection Substances 0.000 claims abstract description 14
- 230000003647 oxidation Effects 0.000 claims abstract description 12
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 12
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 11
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims abstract description 11
- 230000008021 deposition Effects 0.000 claims abstract description 10
- 239000005380 borophosphosilicate glass Substances 0.000 claims abstract description 8
- 238000004544 sputter deposition Methods 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000000407 epitaxy Methods 0.000 claims abstract description 4
- 230000001590 oxidative effect Effects 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 30
- 229910052710 silicon Inorganic materials 0.000 claims description 30
- 239000010703 silicon Substances 0.000 claims description 30
- 238000002513 implantation Methods 0.000 claims description 12
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 7
- 230000009286 beneficial effect Effects 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- -1 boron ions Chemical class 0.000 claims description 3
- 238000010992 reflux Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000008569 process Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 12
- 239000007943 implant Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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CN200710122480A CN100590850C (zh) | 2007-09-26 | 2007-09-26 | 全自对准条型栅功率垂直双扩散场效应晶体管的制作方法 |
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CN200710122480A CN100590850C (zh) | 2007-09-26 | 2007-09-26 | 全自对准条型栅功率垂直双扩散场效应晶体管的制作方法 |
Publications (2)
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CN101399227A CN101399227A (zh) | 2009-04-01 |
CN100590850C true CN100590850C (zh) | 2010-02-17 |
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CN200710122480A Active CN100590850C (zh) | 2007-09-26 | 2007-09-26 | 全自对准条型栅功率垂直双扩散场效应晶体管的制作方法 |
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Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101866841B (zh) * | 2009-04-16 | 2012-04-18 | 上海华虹Nec电子有限公司 | 一种器件源漏区域的自对准金属硅化物形成方法 |
CN101719472B (zh) * | 2009-11-18 | 2011-07-06 | 上海宏力半导体制造有限公司 | 一种垂直双扩散mos晶体管的制备方法 |
CN102074465B (zh) * | 2009-11-24 | 2012-04-18 | 上海华虹Nec电子有限公司 | 一种双阱制造工艺方法 |
CN102142375B (zh) * | 2010-12-29 | 2012-09-19 | 上海贝岭股份有限公司 | 一种平面型场控功率器件的制造方法 |
CN103050405B (zh) * | 2011-10-14 | 2015-06-03 | 北大方正集团有限公司 | 一种dmos器件及其制作方法 |
CN104377190B (zh) * | 2013-08-14 | 2017-02-15 | 北大方正集团有限公司 | 用于监控集成电路工艺中多晶硅层光刻对准偏差的装置 |
CN104716028B (zh) * | 2013-12-12 | 2018-10-19 | 江苏宏微科技股份有限公司 | 沟槽型绝缘栅双极晶体管的沟槽栅结构及其制备方法 |
CN104810286B (zh) * | 2014-01-23 | 2019-04-09 | 北大方正集团有限公司 | 一种mos管及其制造方法 |
CN104810289A (zh) * | 2014-01-27 | 2015-07-29 | 北大方正集团有限公司 | 一种vdmos管的制造方法和vdmos |
CN105206527A (zh) * | 2014-06-05 | 2015-12-30 | 北大方正集团有限公司 | 一种vdmos器件及其制作方法 |
CN108493113A (zh) * | 2018-03-30 | 2018-09-04 | 北京时代民芯科技有限公司 | 一种低电阻抗辐照vdmos芯片的制造方法 |
CN109659236B (zh) * | 2018-12-17 | 2022-08-09 | 吉林华微电子股份有限公司 | 降低vdmos恢复时间的工艺方法及其vdmos半导体器件 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1157485A (zh) * | 1996-02-15 | 1997-08-20 | 台湾茂矽电子股份有限公司 | 互补型金氧半场效应晶体管的制造方法 |
US6277695B1 (en) * | 1999-04-16 | 2001-08-21 | Siliconix Incorporated | Method of forming vertical planar DMOSFET with self-aligned contact |
US6426260B1 (en) * | 1997-12-02 | 2002-07-30 | Magepower Semiconductor Corp. | Switching speed improvement in DMO by implanting lightly doped region under gate |
US20050233541A1 (en) * | 2002-03-05 | 2005-10-20 | Samsung Electronics, Co., Ltd. | Semiconductor device having dual isolation structure and method of fabricating the same |
US6965146B1 (en) * | 2004-11-29 | 2005-11-15 | Silicon-Based Technology Corp. | Self-aligned planar DMOS transistor structure and its manufacturing methods |
-
2007
- 2007-09-26 CN CN200710122480A patent/CN100590850C/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1157485A (zh) * | 1996-02-15 | 1997-08-20 | 台湾茂矽电子股份有限公司 | 互补型金氧半场效应晶体管的制造方法 |
US6426260B1 (en) * | 1997-12-02 | 2002-07-30 | Magepower Semiconductor Corp. | Switching speed improvement in DMO by implanting lightly doped region under gate |
US6277695B1 (en) * | 1999-04-16 | 2001-08-21 | Siliconix Incorporated | Method of forming vertical planar DMOSFET with self-aligned contact |
US20050233541A1 (en) * | 2002-03-05 | 2005-10-20 | Samsung Electronics, Co., Ltd. | Semiconductor device having dual isolation structure and method of fabricating the same |
US6965146B1 (en) * | 2004-11-29 | 2005-11-15 | Silicon-Based Technology Corp. | Self-aligned planar DMOS transistor structure and its manufacturing methods |
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