CN100590626C - Method for modeling electrics statistical model of mixed propagation type MOS transistor - Google Patents
Method for modeling electrics statistical model of mixed propagation type MOS transistor Download PDFInfo
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Abstract
A modeling method of a mixed propagation typed MOS transistor electricity statistical model includes that: the working procedure of a forward propagation method is adopted, which has a step S1 which determines the standard deviation of three model parameters; a backward propagation method is also adopted, which has a step S5 which selects four model parameters and carries out numerical differencemethod sensitivity analysis to the difference of the model parameter and the technique standard. The mixed propagation typed modeling method respectively takes the advantages of the forward propagation modeling method and the backward propagation modeling method and improves the developing efficiency and practicability of MOS transistor electricity statistical model.
Description
Technical field
The present invention relates to a kind of electrics statistical model of mixed propagation type MOS transistor modeling method.Particularly, the present invention relates to mix the modeling method of the MOS transistor electricity statistical model that adopts propagated forward method and back-propagating method.
Background technology
Integrated circuit (IC) products generally will be passed through roads up to a hundred process procedure in the technology manufacture process at present.Because each road technology is subjected to the influence of the uncertain factor on the statistical significance, even product for same design, its circuit performance also can be owing to different manufacturing shops, the different batches of technology, different wafers and different chip positions and corresponding variation takes place.
Therefore, when setting up device model, the influence of these uncertain statistical considerations should be taken into full account, promptly the corresponding devices electricity statistical model should be set up for integrated circuit (IC) design person.When integrated circuit (IC) design person utilized this model to do Monte-Carlo Simulation, the statistical distribution of the circuit performance that analog simulation obtains should keep basically identical with the statistical distribution of actual process manufacturing circuit performance afterwards.
At present, the method for setting up the MOS transistor electricity statistical model generally is divided into 2 kinds: propagated forward (forward propagation) and back-propagating (backwardpropagation).The major advantage of " propagated forward " method is that process is straightforward, but difficult definite all model parameter standard deviations.The major advantage of " back-propagating " method is that the model parameter standard deviation of determining has suitable reliability, but difficult point is the analysis of the sensitivity of process deviation and model bias.
Because " back-propagating " adopts the method from the reverse prediction model deviation of the process deviation that can survey, model bias has higher confidence level, so industry member is generally taked the modeling method of back-propagating.The difficulty of the statistical model modeling method of back-propagating then is the choosing method of statistical nature parameter and the analysis of associated sensitivity with key.Only choose suitable statistical nature parameter, calculate accurately associated sensitivity and set up statistical model in view of the above, the analog result that obtains through emulation just can match with the statistics of reality.
More than 2 kinds of methods have separately relative merits, but, be difficult to bring into play simultaneously 2 kinds of methods advantage separately, thereby greatly have influence on efficient and the practicality of setting up electricity statistical model owing in real work, how to be used independently of one another by people.
The objective of the invention is to set up in the process at the MOS transistor electricity statistical model, adopt the mixed propagation method, it is the method that propagated forward combines with back-propagating, improve the efficient of setting up the MOS transistor electricity statistical model, bring into play 2 kinds of methods advantage separately, strengthen the efficient and the practicality of MOS transistor electricity statistical model exploitation.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of modeling method of electrics statistical model of mixed propagation type MOS transistor, and performance propagated forward and back-propagating method advantage separately improve statistical model tempo of development and reliability.
For solving the problems of the technologies described above, the modeling method of electrics statistical model of mixed propagation type MOS transistor of the present invention is comprising adopt determining that model bias simulates operation that the gained process deviation meets the propagated forward method of survey process deviation substantially and the employing operation from the back-propagating method that can survey the reverse prediction model deviation of process deviation; The operation of the operation of described propagated forward method and back-propagating method, two kinds of circulation ways are complimentary to one another.
Again, the modeling method of electrics statistical model of mixed propagation type MOS transistor of the present invention, be characterized in, when the choosing of statistical nature parameter, adopt in the operation of propagated forward method, choose following MOS transistor BSIM4 model parameter, the model parameter of promptly choosing is the oxidated layer thickness Tox in the industry member standard MOS BSIM4 model, piece resistance R sh that source electrode contacts with drain electrode and the threshold voltage vt h0 of device.These model parameters have very strong physical property, have the measurability of integrated circuit technology statistics simultaneously again.Therefore, above model parameter is the comparatively ideal statistical nature parameter that can be used for the propagated forward method.
Again, the modeling method of electrics statistical model of mixed propagation type MOS transistor of the present invention, be characterized in, when the choosing of statistical nature parameter, adopt in the operation of back-propagating method, choose following MOS transistor BSIM4 model parameter, the model parameter of promptly choosing is variation Xl, the variation Xw of the channel width due to the technology, the short-channel effect coefficient k 1 of threshold voltage and the narrow-channel effect coefficient k 3 of threshold voltage of the channel length due to the technology in the industry member standard MOS BSIM4 model.These model parameters have higher sensitivity, and promptly they are bigger to device simulation Effect on Performance degree, but are difficult to pre-determine its clear and definite statistical distribution range.Therefore, above model parameter is the comparatively ideal statistical nature parameter that is used for the back-propagating method.
Moreover, the modeling method of electrics statistical model of mixed propagation type MOS transistor of the present invention, be characterized in, adopt the operation of propagated forward method, the technological standards deviation of making the step of Monte Carlo simulation by emulator and making simulation comprising the step of the standard deviation of determining 3 model parameters, according to the model parameter standard deviation of determining with survey the step that the technological standards deviation conforms to substantially.
Again, the modeling method of electrics statistical model of mixed propagation type MOS transistor of the present invention, be characterized in, adopt the operation of back-propagating method, comprising in production line, collecting a large amount of technological parameters and obtaining the step of the technological standards deviation relevant with these technological parameters, choose 4 model parameters, described 4 model parameters are the variation Xl of the channel length due to the technology in the industry member standard MOS BSIM4 model, the variation Xw of the channel width due to the technology, the short-channel effect coefficient k 1 of threshold voltage and the narrow-channel effect coefficient k 3 of threshold voltage, and the step of carrying out the numerical difference between point-score sensitivity analysis of described 4 model parameters and described technological standards deviation, the described technological standards deviation of collecting in by production line on known sensitivity basis is oppositely released the step of described model parameter standard deviation, and described model parameter standard deviation write model file and simulate and oppositely release the step that described 4 model parameter standard deviations conform to substantially up to simulation process standard deviation and actual measurement technological standards deviation data.
The present invention sets up in the process the MOS transistor electricity statistical model, adopted the mixed propagation method, has chosen the modeling that some characteristic parameters are used for propagated forward targetedly.Simultaneously, chosen the modeling that the other characteristic parameter is used for back-propagating targetedly.Choose by optimization, can bring into play 2 kinds of modeling methods advantage separately, in the short period of time, set up practical MOS transistor electricity statistical model, and obtain the simulated effect of device statistic property preferably these characteristic parameters.
Use the present invention, the device model slip-stick artist is on typicalness MOS transistor model (typical model) basis that extracts, can carry out statistical nature parameter and fore-and-aft direction quickly and propagate effectively choosing of modeling pattern, help to improve the efficient of setting up transistor electricity statistical model, and then promote the efficient and the accuracy of integrated circuit (IC) design work significantly.
Description of drawings
Fig. 1 is that the present invention adopts the propagated forward method to carry out the process flow diagram of MOS transistor electricity statistical model exploitation;
Fig. 2 is that the present invention adopts the back-propagating method to carry out the process flow diagram of MOS transistor electricity statistical model exploitation.
In the accompanying drawing: S1 is for determining the step of model parameter standard deviation; S2 is for doing the step of Monte Carlo simulation by emulator; S3 is the step that the technological standards deviation of simulation is conformed to the technological standards deviation of actual measurement; S4 is the step of technological standards deviation; S5 is the step of the sensitivity analysis of model parameter and technological standards deviation; S6 is the step of model parameter standard deviation; S7 is the step that the technological standards deviation of simulation is conformed to the technological standards deviation of actual measurement.
Embodiment
The present invention is further detailed explanation below in conjunction with accompanying drawing.
Embodiment 1
The modeling method of electrics statistical model of mixed propagation type MOS transistor of the present invention, be characterized in that this modeling method comprises adopt to determine that model bias simulates operation that the gained process deviation meets the propagated forward method of survey process deviation substantially and the employing operation from the back-propagating method that can survey the reverse prediction model deviation of process deviation.
Present embodiment has overcome the shortcoming that is used alone transmission method, but adopts the modeling method of 2 kinds of circulation way complementations, improves modeling speed and accuracy effectively.
Embodiment 2
The modeling method of the electrics statistical model of mixed propagation type MOS transistor of present embodiment 2 relates to the modeling method of the electrics statistical model of mixed propagation type MOS transistor of embodiment 1, when the choosing of statistical nature parameter, adopt in the operation of propagated forward method, choose following MOS transistor BSIM4 model parameter, described 3 model parameters of promptly choosing are the oxidated layer thickness Tox in the industry member standard MOS BSIM4 model, piece resistance R sh that source electrode contacts with drain electrode and the threshold voltage vt h0 of device.
This method, major advantage are that modeling process is straightforward, effectively improve modeling efficiency.
Embodiment 3
The modeling method of the electrics statistical model of mixed propagation type MOS transistor of present embodiment 3 relates to the modeling method of the electrics statistical model of mixed propagation type MOS transistor of embodiment 2, when the choosing of statistical nature parameter, adopt the back-propagating method, choose following MOS transistor BSIM4 model parameter, described 4 model parameters of promptly choosing are variation Xl, the variation Xw of the channel width due to the technology, the short-channel effect coefficient k 1 of threshold voltage and the narrow-channel effect coefficient k 3 of threshold voltage of the channel length due to the technology in the industry member standard MOS BSIM4 model.
This method, major advantage are that the model parameter standard deviation of determining has suitable reliability, therefore, can increase substantially the accuracy of modeling.
Embodiment 4
The modeling method of the electrics statistical model of mixed propagation type MOS transistor of present embodiment 4 relates to the modeling method of the electrics statistical model of mixed propagation type MOS transistor of embodiment 3, as shown in Figure 1, adopts the operation of propagated forward method.This operation comprises the step S1 of the standard deviation of determining 3 model parameters, according to determining technological standards deviation that the model parameter standard deviation is the step S2 of Monte Carlo simulation by emulator and is made simulation and surveying the step S3 that the technological standards deviation conforms to substantially.
Embodiment 5
The modeling method of the electrics statistical model of mixed propagation type MOS transistor of present embodiment 5 relates to the modeling method of the electrics statistical model of mixed propagation type MOS transistor of embodiment 4, as shown in Figure 2, adopts the operation of back-propagating method.This operation is included in the step S4 that collects a large amount of technological parameters in the production line and obtain the technological standards deviation relevant with these technological parameters, choose 4 model parameters and carry out described model parameter and the step S5 of the numerical difference between point-score sensitivity analysis of described technological standards deviation, the described technological standards deviation of collecting in by production line on known sensitivity basis is oppositely released the step S6 of described 4 model parameter standard deviations, and described model parameter standard deviation write model file and simulate and finely tune the step S7 that described 4 model parameter standard deviations conform to substantially up to simulation process standard deviation and actual measurement technological standards deviation.
Present embodiment 4 and embodiment 5, the advantage separately of 2 kinds of transmission methods of performance, effective selected characteristic parameter, the MOS transistor electricity statistical model simulated effect of foundation is good and practical.
Claims (3)
1, a kind of electrics statistical model of mixed propagation type MOS transistor modeling method is characterized in that, this modeling method comprises
Adopt to determine model bias simulate operation that the gained process deviation meets the propagated forward method of surveying process deviation substantially and
Employing is from the operation of the back-propagating method that can survey the reverse prediction model deviation of process deviation;
The operation of the operation of described propagated forward method and back-propagating method, two kinds of circulation ways are complimentary to one another;
Adopt in the operation of propagated forward method, choose following MOS transistor BSIM4 model parameter, the model parameter of promptly choosing is the oxidated layer thickness Tox in the industry member standard MOS BSIM4 model, piece resistance R sh that source electrode contacts with drain electrode and the threshold voltage vt h0 of device;
Adopt in the operation of back-propagating method, choose following MOS transistor BSIM4 model parameter, the model parameter of promptly choosing is variation Xl, the variation Xw of the channel width due to the technology, the short-channel effect coefficient k 1 of threshold voltage and the narrow-channel effect coefficient k 3 of threshold voltage of the channel length due to the technology in the industry member standard MOS BSIM4 model.
2, according to the modeling method described in the claim 1, it is characterized in that, adopt the operation of propagated forward method, comprising
Determine the standard deviation of 3 model parameters step (S1),
The technological standards deviation of making the step (S2) of Monte Carlo simulation by emulator and making simulation according to the model parameter standard deviation of determining with survey the step (S3) that the technological standards deviation conforms to substantially.
3, according to the modeling method described in the claim 2, it is characterized in that, adopt the operation of back-propagating method, comprising
In production line, collect a large amount of technological parameters and obtain the technological standards deviation relevant with these technological parameters step (S4),
Choose 4 model parameters, described 4 model parameters are variation Xl, the variation Xw of the channel width due to the technology, the short-channel effect coefficient k 1 of threshold voltage and the narrow-channel effect coefficient k 3 of threshold voltage of the channel length due to the technology in the industry member standard MOS BSIM4 model, and carry out the numerical difference between point-score sensitivity analysis of described 4 model parameters and described technological standards deviation step (S5),
The described technological standards deviation of on known sensitivity basis, collecting in by production line oppositely release described 4 model parameter standard deviations step (S6) and
Described model parameter standard deviation is write model file and simulate and finely tune the step (S7) that described 4 model parameter standard deviations conform to substantially up to simulation process standard deviation and actual measurement technological standards deviation.
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