CN100573969C - 有机发光二极管制造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000001301 oxygen Substances 0.000 claims abstract description 28
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 28
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000000151 deposition Methods 0.000 claims abstract description 11
- 230000008021 deposition Effects 0.000 claims abstract description 10
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims abstract description 7
- 230000001590 oxidative effect Effects 0.000 claims abstract description 7
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 6
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical group O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000000059 patterning Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 15
- 230000005540 biological transmission Effects 0.000 claims description 10
- 238000002347 injection Methods 0.000 claims description 10
- 239000007924 injection Substances 0.000 claims description 10
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 9
- 238000005137 deposition process Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 150000001491 aromatic compounds Chemical class 0.000 claims description 2
- 125000003118 aryl group Chemical group 0.000 claims description 2
- 238000007641 inkjet printing Methods 0.000 claims description 2
- 229920000767 polyaniline Polymers 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 125000005259 triarylamine group Chemical group 0.000 claims description 2
- 239000003595 mist Substances 0.000 claims 1
- 150000002926 oxygen Chemical class 0.000 claims 1
- 239000011575 calcium Substances 0.000 description 5
- 239000008246 gaseous mixture Substances 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- -1 polyphenylene ethylene Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001339 alkali metal compounds Chemical class 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
本发明涉及一种有机发光二极管制造方法,其包括以下步骤:提供一绝缘基板;在该绝缘基板上沉积一导电薄层,作为第一电极,该导电薄层的材料为氧化铟锡或氧化铟锌;在该第一电极上继续沉积该导电薄层,同时通入含氧的氧化性气体,形成第二电极,图案化该第一电极与第二电极,形成阳极;在该阳极上形成一有机发光层;在该有机发光层上形成一阴极。该有机发光二极管制造方法可使形成的有机发光二极管阳极功函数较高。
Description
技术领域
本发明涉及一种有机发光二极管(Organic Light EmittingDiode,OLED)制造方法。
背景技术
近年来,有机发光二极管以其独特的优势,如制造方法简单、功耗低、颜色丰富、适用于柔性衬底与大面积显示等,备受业界关注。
请参阅图1,是一种现有技术有机发光二极管的剖视图。该有机发光二极管10通常包括一基板11、自下而上依次层叠设置在该基板11上的一阳极12、一空穴注入层(Hole Injection Layer,HIL)13、一空穴传输层(Hole Transfer Layer,HTL)14、一有机发光层15、一电子传输层(Electron Transfer Layer,ETL)16、一电子注入层(Electron Injection Layer,EIL)17与一阴极18。
该有机发光二极管10的工作原理如下所述:在该有机发光二极管10的阳极12与阴极18之间施加正向偏置的电压,该阳极12的空穴在正向偏压作用下经该空穴注入层13与该空穴传输层14注入该有机发光层15,而该阴极18的电子在正向偏压作用下经该电子传输层16与该电子注入层17注入该有机发光层15,该阳极12注入的空穴与该阴极18注入的电子在该有机发光层15相结合而激发出光子,该有机发光二极管10向外界发光。
该阳极12的空穴注入该有机发光层15需克服该阳极12与该有机发光层15间的能障,通常该阳极12的功函数(WorkFunction)越高,其空穴注入该有机发光层15的能障越低,则该有机发光二极管10开始发光的启动电压越低。为提高该阳极12的功函数,业界通常采用功函数较高的氧化铟锡(Indium TinOxide,ITO)薄层制作该阳极12,并对该阳极12的表面进行氧等离子或紫外线/臭氧处理,以提高氧化铟锡层的含氧量,进而提高该阳极12的功函数。
请参阅图2,是图1所示有机发光二极管10的阳极12经处理后的剖视图。该阳极12包括一第一电极121与一第二电极122,该第二电极122的厚度远小于该第一电极121的厚度,该第二电极122是该阳极12的表面经氧等离子或紫外线/臭氧处理后形成的薄层,其含氧量高于该第一电极121。
然而,利用氧等离子或紫外线/臭氧对该阳极12的表面进行处理的方法,仅能提高该阳极12表面的含氧量,形成厚度很薄的第二电极122,所以氧等离子或紫外线/臭氧处理该阳极12表面的方法对该阳极12功函数的提高有限,且用氧等离子对氧化铟锡薄层表面处理的均匀度不高,导致该有机发光二极管10第二电极121的功函数不等,进而导致同一驱动电压作用下,该有机发光二极管10的发光不均匀。
发明内容
为了解决现有制造方法制造的有机发光二极管阳极功函数较低且发光不均匀的缺点,提供一种阳极功函数较高且发光均匀度较好的有机发光二极管制造方法实为必要。
一种有机发光二极管制造方法,其包括以下步骤:提供一绝缘基板;在该绝缘基板上沉积一导电薄层,作为第一电极,该导电薄层的材料为氧化铟锡或氧化铟锌;在该第一电极上继续沉积该导电薄层,同时通入含氧的氧化性气体,形成第二电极,图案化该第一电极与第二电极,形成阳极;在该阳极上形成一有机发光层;在该有机发光层上形成一阴极。
采用上述制造方法的有机发光二极管,可在该阳极沉积过程中通入含氧的氧化性气体,使该阳极内部与表面的含氧量皆增加,进而使形成的有机发光二极管阳极功函数较高。同时,上述制造方法可控制含氧的氧化性气体的流量,所以可保证有机发光二极管阳极的含氧量均匀,进而使有机发光二极管发光均匀。
附图说明
图1是一种现有技术有机发光二极管的剖视图。
图2是图1所示有机发光二极管的阳极经处理后的剖视图。
图3是本发明有机发光二极管制造方法一较佳实施方式的流程图。
具体实施方式
请参阅图3,是本发明有机发光二极管制造方法一较佳实施方式的流程图。该有机发光二极管制造方法包括以下步骤:提供一基板(S1);形成第一电极(S2);形成阳极(S3);形成空穴注入层与空穴传输层(S4);形成有机发光层(S5);形成电子注入层与电子传输层(S6);形成阴极(S7)。各步骤详述如下:
步骤S1,提供一基板。提供的基板用于承载有机发光二极管,其材料可为玻璃、石英等透明绝缘物质。
步骤S2,形成第一电极。在基板上沉积氧化铟锌(IndiumZinc Oxide,IZO)薄层,作为第一电极。该第一电极的厚度可根据沉积速度与沉积时间来控制,优选的厚度为1.3×10-7米,其材料也可氧化铟锡或其它高功函数透明导电物质等,其沉积方法可为溅镀法。
步骤S3,形成阳极。在该第一电极上继续沉积氧化铟锌薄层,同时通入富含氧元素且具较强氧化性的气体,如氧气或水蒸气或二者的混合气,提高氧化铟锌的含氧量。当沉积到预定厚度时,停止沉积氧化铟锌,并停止通入氧气或水蒸气或二者的混合气,得到的高含氧量的氧化铟锌薄层作为第二电极,对该第一电极与该第二电极进行图案化处理,形成阳极。该第二电极优选的厚度2×10-8米,其形成过程中,通入氧气或水蒸气或二者的混合气的流量可根据实际需求氧化铟锡薄层的含氧量进行控制。该第一电极为1.3×10-7米,而该第二电极的厚度为2×10-8米是综合考虑该阳极的导电性能与功函数得出的厚度,该第一电极与该第二电极的厚度也可根据实际应用中对导电性能与功函数的要求做出变动。
步骤S4,形成空穴注入层与空穴传输层。对该阳极进行清洗,通常先用去污水洗涤,再用去离子水与丙酮、乙醇等有机溶剂进行超声波清洗,经有机溶剂蒸气脱脂处理后,再用去离子水多次冲洗,在清洗后的阳极表面自下而上依次形成空穴注入层与空穴传输层。该空穴注入层的材料为铜酞菁(CopperPhthalocyanine,CuPc),该空穴传输层的材料可为芳香多胺类化合物,如聚苯胺(Ployaniline)或三芳胺衍生物。该空穴注入层与该空穴传输层应用于有机发光二极管中,一方面可降低所形成有极发光二极管的激活电压,另一方面可提高形成的有极发光二极管的稳定性。
步骤S5,形成有机发光层。在该空穴传输层的表面沉积一层有机物质,并图案化该有机物质而形成该有机发光层。该有机发光层的材料为高分子电致发光化合物或者小分子电致发光化合物,当其材料为高分子电致发光化合物,如聚苯撑乙烯(Para-phenylenevinylene,PPV)时,采用旋涂法或喷墨打印法实现成膜;而当其材料为小分子电致发光化合物,如双胺化合物(Diamine)时,采用真空蒸镀(Vacuum Vapor Deposition)法实现成膜。
步骤S6,形成电子注入层与电子传输层。在有机发光层的表面自下而上依次沉积电子传输层与该电子注入层。该电子传输层的材料为具较大共扼平面的芳香族化合物。该电子注入层的材料为具低功函数的碱金属或碱金属化合物,如氟化锂(LiF)、钙(Calcium,Ca)、镁(Magnesium,Mg)等。
步骤S7,形成阴极。在该电子注入层的表面沉积阴极,该阴极是一具低功函数的透明薄层,其厚度通常为5×10-9米~30×10-9米,因其厚度很薄,所以具有相当的透过率,不影响有机发光二极管的发光效率。该阴极可采用多种金属形成的堆栈结构,如锂/铝/银(Li/Al/Ag)堆栈结构、钙/铝(Ca/Al)堆栈结构或镁/银(Mg/Ag)堆栈结构。
采用上述制造方法的有机发光二极管,在该阳极沉积过程中通入氧气或水蒸气或二者的混合气,可使该阳极内部与表面的含氧量皆增加,进而使形成的有机发光二极管阳极功函数较高。同时因通入氧气或水蒸气或二者的混合气的流量可控制,可保证氧化铟锡层的含氧量均匀,进而使有机发光二极管阳极的功函数保持一致,从而使有机发光二极管的发光均匀。
Claims (10)
1.一种有机发光二极管制造方法,其特征在于:包括以下步骤:
提供一绝缘基板;
在该绝缘基板上沉积一导电薄层,作为第一电极,该导电薄层的材料为氧化铟锡或氧化铟锌;
在该第一电极上继续沉积该导电薄层,同时通入含氧的氧化性气体,形成第二电极,图案化该第一电极与第二电极,形成阳极;
在该阳极上形成一有机发光层;
在该有机发光层上形成一阴极。
2.如权利要求1所述的有机发光二极管制造方法,其特征在于:该含氧的氧化性气体为氧气、水蒸气或二者的混合气体。
3.如权利要求1所述的有机发光二极管制造方法,其特征在于:形成的第一电极的厚度为1.3×10-7米。
4.如权利要求3所述的有机发光二极管制造方法,其特征在于:形成的第二电极的厚度为2×10-8米。
5.如权利要求1所述的有机发光二极管制造方法,其特征在于:该第一电极的沉积方法为溅镀法。
6.如权利要求1所述的有机发光二极管制造方法,其特征在于:该有机发光层采用旋涂法或喷墨打印法实现成膜。
7.如权利要求1所述的有机发光二极管制造方法,其特征在于:其进一步包括在该阳极与该有机发光层之间自下而上依次形成一空穴注入层与一空穴传输层的步骤。
8.如权利要求7所述的有机发光二极管制造方法,其特征在于:该空穴传输层的材料为芳香多胺类化合物、三芳胺衍生物或聚苯胺。
9.如权利要求1所述的有机发光二极管制造方法,其特征在于:其进一步包括在该有机发光层与该阴极之间自下而上依次形成一电子传输层与一电子注入层的步骤。
10.如权利要求9所述的有机发光二极管制造方法,其特征在于:该电子传输层的材料为具共轭平面的芳香族化合物。
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CN103594655B (zh) * | 2013-10-22 | 2016-04-06 | 溧阳市东大技术转移中心有限公司 | 一种有机发光二极管的阳电极 |
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CN103594661B (zh) * | 2013-10-22 | 2016-01-06 | 溧阳市东大技术转移中心有限公司 | 一种有机发光二极管阳电极的制备方法 |
CN107962877A (zh) * | 2017-04-17 | 2018-04-27 | 广东聚华印刷显示技术有限公司 | 真空干燥设备及显示面板的制备方法 |
US20190280059A1 (en) * | 2018-03-07 | 2019-09-12 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Oled display panel and manufacturing method thereof |
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