CN100570889C - In body silicon and SOI MOS device, make the structure and the method for dislocation-free stressed channels - Google Patents
In body silicon and SOI MOS device, make the structure and the method for dislocation-free stressed channels Download PDFInfo
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- CN100570889C CN100570889C CNB2005100553049A CN200510055304A CN100570889C CN 100570889 C CN100570889 C CN 100570889C CN B2005100553049 A CNB2005100553049 A CN B2005100553049A CN 200510055304 A CN200510055304 A CN 200510055304A CN 100570889 C CN100570889 C CN 100570889C
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- 238000000034 method Methods 0.000 title claims abstract description 52
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 41
- 239000010703 silicon Substances 0.000 title claims abstract description 41
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 64
- 239000004065 semiconductor Substances 0.000 claims abstract description 26
- 239000012212 insulator Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 14
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 14
- 239000004020 conductor Substances 0.000 claims abstract description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 53
- 150000004767 nitrides Chemical class 0.000 claims description 52
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 38
- 229920005591 polysilicon Polymers 0.000 claims description 35
- 239000013078 crystal Substances 0.000 claims description 33
- 238000005530 etching Methods 0.000 claims description 31
- 239000000203 mixture Substances 0.000 claims description 28
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 25
- 238000005498 polishing Methods 0.000 claims description 17
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 14
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000000137 annealing Methods 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 5
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- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
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- 238000002955 isolation Methods 0.000 claims description 2
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- 230000000295 complement effect Effects 0.000 abstract 1
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- 238000002425 crystallisation Methods 0.000 description 2
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Abstract
The invention provides structure and the method for in body silicon and SOI (silicon-on-insulator) CMOS (complementary metal oxide semiconductors (CMOS)) device, making the dislocation-free stressed channels by the gate stress that utilizes SiGe and/or Si:C.The MOS device comprises the stacked gate structure of substrate, the gate dielectric layer on the substrate and SiGe and/or the Si:C of body silicon or SOI, and this stacked gate structure has the stress that produces at the interface of SSi (strain Si)/SiGe in the stacked gate structure or SSi/Si:C.The stacked gate structure has the second stress rete and the semiconductor on the second stress rete or conductor such as p (the polycrystalline)-Si of the first stress rete, the strain SiGe on the first stress rete or strain Si:C at big crystallite dimension Si on the gate dielectric layer or SiGe.
Description
Technical field
Present invention relates in general in body silicon and SOI (silicon-on-insulator) MOS (metal-oxide semiconductor (MOS)) device, make the structure and the method for dislocation-free stressed channels by the gate stress that utilizes SiGe and/or Si:C.
Background technology
Dislocation is the defective in the crystal structure, and the current path of leakage current may be provided in body silicon with this dislocation and SOI cmos device unfriendly.
Summary of the invention
The invention provides structure and the method for in body silicon and SOI MOS (metal-oxide semiconductor (MOS)) device, making the dislocation-free stressed channels by the gate stress that utilizes SiGe and/or Si:C.The MOS device comprises the stacked gate structure of substrate, the gate dielectric layer on the substrate and SiGe and/or the Si:C of body silicon or SOI, and this stacked gate structure has the stress that produces at the interface of SSi (strain Si)/SiGe in the stacked gate structure or SSi/Si:C.This stacked gate structure has the second stress rete and the semiconductor on the second stress rete or conductor such as p (polycrystalline)-Si or the silicide of the first stress rete, the strain Si on the first stress rete or strain SiGe or strain Si:C at big crystallite dimension Si on the gate dielectric layer or SiGe.
This specification is discussed stress and strain at this, should be realized that stress and strain is correlated with, and stress and strain is directly proportional, and equals the strain multiplication by constants.And strong strain usually produces dislocation in crystal structure.This specification also relates to tensile stress and compression stress at this, and wherein tensile stress refers to that the stress that applies in the nFET raceway groove, compression stress refer to the stress that applies in the pFET raceway groove.
The present invention:
Avoided the dislocation that in the raceway groove of body silicon and SOI (silicon-on-insulator) MOS (metal-oxide semiconductor (MOS)) device, produces;
Apply dissimilar stress respectively to nFET and pFET device;
Etching and the cleaning method of the SiGe that may cause narrow electric wire fracture have been overcome;
By being used for the SiGe stress application of ultra-thin SOI device;
Overcome dislocation generation increase under higher temperature.This is because SD RTA (source region, drain region, rapid thermal annealing) has limited in lower temperature (for example 550 ℃) use of the thick inferior stabilized zone of the strain Si (SSi) of growth down;
Having overcome with high Ge%SSi/SiGe requires SSi extremely thin to reduce the relevant problem of demand that dislocation produces.But if strain Si too thin (for example 5nm, corresponding to the critical thickness of 35%Ge), the interface of SSi/SiGe may reduce mobility so.
The present invention:
Structure and the method for making response body silicon and SOI cmos device by the stress grid technology of utilizing SiGe and Si:C stacked gate are provided;
Because SSi/SiGe in the grid or the interface of SSi/Si:C allow to use big Ge% and SiGe thickness, to produce big stress;
Because as the technology of the replacement part of grid pole of carrying out afterwards in high-temperature process (for example SD RTA) (replacement of the part polysilicon in the finger grid is as following disclosed and discuss), more stable SSi/SiGe and the stress film of SSi/Si:C are provided;
By adjusting Ge% among SiGe or the Si:C or C% or coming stress in the control device raceway groove by changing film thickness;
Can directly use body silicon and SOI technology, and not change the conventional diffusion technology in FEOL (FEOL) technology.
Description of drawings
In conjunction with the drawings, detailed description with reference to following embodiment, those skilled in the art can more easily understand by the gate stress that utilizes SiGe and/or Si:C make the structure of dislocation-free stressed channels and the above-mentioned purpose of the present invention and the advantage of method in body silicon and SOICMOS device, wherein in whole accompanying drawing, use identical label to represent identical part, and wherein:
Fig. 1 to 8 shows the manufacture method step of the first embodiment of the present invention;
Fig. 1 shows step 1 and 2 and finishes structure afterwards, and step 1 and 2 uses common process to form gate oxide on silicon substrate, deposition of amorphous silicon or polysilicon, and the polysilicon of annealing and having big crystallite dimension to obtain;
Fig. 2 shows the structure after the step 3, and step 3 comprises the oxide on oxidation and the etching macromeritic polysilicon layer, up to reaching～10nm thickness;
Fig. 3 shows the structure after the step 4, and step 4 comprises that deposit p (polycrystalline)-SiGe is to form stacked gate;
Fig. 4 shows the structure after the step 5, and step 5 comprises and is used for replacing grid so that device has the p-SiGe of grid and around the conventional method of the separator of grid;
Fig. 5 shows the structure after the step 6, and step 6 comprises deposited oxide, then carries out CMP (chemico-mechanical polishing), on top portions of gates, stop, and the deposit thin nitride layer;
Fig. 6 shows the structure after the step 7, and step 7 comprises with photoresist covering and composition pFET, nitride etching, and etching p-SiGe grid is used for nFET selectively;
Fig. 7 shows the structure after the step 8, and step 8 comprises removes photoresist, selectivity epi strain c-SiGe, recharges polysilicon in nFETs, and carries out CMP, stops on the oxide;
Fig. 8 shows the structure after the step 9, and step 9 comprises deposit thin nitride layer and photoresist, and common repeating step 6 and 7, but covers nFET this moment and handle pFET;
Fig. 9 shows body silicon or the SOICMOS device of finishing by the gate stress that uses SiGe and/or Si:C;
Figure 10 shows the second embodiment of the present invention, comprises the method step that is similar to first embodiment, but is to use the big crystallite dimension p-Si of relaxation
1-xGe
x100 replace p-Si as first grid layer or inculating crystal layer, with growth stress film in grid;
Figure 11 shows the third embodiment of the present invention, comprises the method that is similar to second embodiment, but the inculating crystal layer that wherein is used for nFETs and pFETs has different Ge content, for example is used for the p-Si of nFET
1-xnGe
Xn110 and be used for the p-Si of pFET
1-xpGe
Xp111;
Figure 12 shows the fourth embodiment of the present invention, uses diverse ways by formed stacked gate before the grid composition, forms stressor layers in grid, to obtain the structure identical with the 3rd embodiment with first, second;
Figure 13 shows the fifth embodiment of the present invention, uses the bonding with two monocrystalline silicon layers to handle wafer, and two monocrystalline silicon layers have bonding oxide/silicon interface and thermal oxide/silicon interface separately;
Figure 14 shows the sixth embodiment of the present invention, uses the other method manufacturing to have the structure of two single crystalline layers shown in the 5th embodiment.This method is used the monocrystalline regrowth from the a-Si layer, starts near the seed crystal of grid;
The conventional wafer of step 1 from monocrystalline silicon (c-Si) substrate 140 then carries out conventional method, on silicon substrate, to make gate oxide level 142, and the thin layer of deposit a-Si 144 (for example ,～25nm thickness) then, as shown in figure 14;
Figure 15 shows the structure after the step 2, and step 2 comprises deposit and composition photoresist, etching a-Si, and etching grid oxide;
Figure 16 shows the structure after the step 3, step 3 comprise remove photoresist and deposit a-Si (～25nm);
Figure 17 shows the structure after the step 4, and step 4 comprises the composition photoresist, so that it still covers nFET district and pFET district, and etching a-Si is up to gate oxide, so that isolate nFET district and the pFET district that is used for the crystalline silicon regrowth;
Figure 18 shows the structure after the step 5, and step 5 comprises annealing with crystallization a-Si layer again, thereby forms single crystalline Si.
Embodiment
Fig. 1 to 8 shows the manufacture method step of the first embodiment of the present invention.
Fig. 1 shows the structure after completing steps 1 and 2.Step 1 is used conventional method to go up at the Si of wafer substrate 10 (replaceability embodiment can adopt the SOI technology) and is formed gate oxide 12, step 2 comprises deposit a-Si (amorphous silicon) or polysilicon, and annealing a-Si or polysilicon, to obtain polysilicon 14 with big crystallite dimension.If crystallite dimension is near 200nm, as shown in Figure 1, so for the gated device (being shown Lpo1y=50nm) of 50nm, grid laterally in have 75% probability can not see grain boundary 16, as shown in Figure 1.The grain boundary helps to eliminate the stress in the material.
Fig. 2 shows the structure after the step 3, and step 3 comprises the oxide on oxidation and the etching macromeritic polysilicon layer, up to reaching～10nm thickness.
Fig. 3 shows the structure after the step 4, and step 4 comprises deposit p (polycrystalline)-SiGe, to form stacked gate 40.
Fig. 4 shows the structure after the step 5, and step 5 comprises and is used for replacing grid so that device has the p-SiGe40 of grid and around the conventional method of the separator 42 of grid.Notice that all dopants are injected into and anneal, becoming active area, and activate for dopant and not need further diffusion.
Fig. 5 shows the structure after the step 6, step 6 comprises deposited oxide 50, then carries out CMP (chemico-mechanical polishing), stops on top portions of gates, and deposit thin nitride layer 52, to prevent when separate processes nFET and the pFET epi (epitaxial crystal growth) on top portions of gates.
Fig. 6 shows the structure after the step 7, and step 7 comprises with photoresist 64 and covering and composition pFET, nitride etching 52, and the p-SiGe40 grid that is etched in 66 places selectively is used for nFET62.The purpose that covers pFET is the stress that produces different stage or type in nFET device and pFET device respectively.
Fig. 7 shows the structure after the step 8, step 8 comprises removes photoresist 64, selectivity epi (epitaxial crystal growth) strain c-SiGe (monocrystalline) 70 (＜critical thickness also may need on the spot grid to be mixed), in nFET 62, recharge polysilicon at 72 places, carry out CMP, on oxide 50, stop, and may be in nFET 62 etch-back a little.
Fig. 8 shows the structure after the step 9, and step 9 comprises deposit thin nitride layer 80 and photoresist 82, and common repeating step 6 and 7, but covers nFET 62 and handle pFET 64 this moment; Use strain Si:C 84 to replace SiGe to be used for pFET, recharge polysilicon then at 86 places and carry out CMP, 50 places stop at oxide.Fig. 8 shows grain boundary 16 and enters strain Si:C continuously.Fig. 8 shows the stacked gate structure that first embodiment finishes, and after this step, the use conventional method is formed for the silicide of grid and finishes back-end process (BEOL) work.
Another selection scheme comprises covering nFET district and carbon is injected the pFET grid, and annealing under 700 ℃-850 ℃, to produce tensile stress in the injection region in the pFET grid.
Fig. 9 shows stacked gate by using SiGe and/or Si:C to produce the gate stress of stress, response body silicon of finishing or SOIMOS device by the interface of SSi/SiGe in the stacked gate structure or SSi/Si:C.Fig. 9 shows the device that can make on the substrate of body semiconductor (Si) 10 or semiconductor-on-insulator (SOI) 90, this device comprises the gate dielectric layer on the substrate top, and stacked gate structure and around the buffer layer 42 of stacked gate structure, the stacked gate structure has monocrystalline on gate dielectric layer 12 or first semiconductor or the conductor stress rete 14 of big crystallite dimension Si or SiGe, strain c-SiGe on the first stress rete or second semiconductor of strain Si:C or conductor stress rete 70 or 84, and the semiconductor on the second stress rete or electrically conductive film 72 or 86 are as p-Si.Can in different embodiment, produce stress/strain in the grid by different materials or the different weight percentage by material.
Figure 10 shows the second embodiment of the present invention, comprises the method step that is similar to first embodiment, but is to use the big crystallite dimension p-Si of relaxation
1-xGe
x100 replace p-Si as the first grid layer, and this first grid layer is used as inculating crystal layer with growth stress film in grid.This ply strain after the selective epitaxial growth step.The percentage that can change material in different embodiment is to obtain different stress.In the step 4 of first embodiment, replace the p-SiGe deposit with the p-Si deposit.Similarly, in the step 7 and 8 of first embodiment, the selective etch step of p-SiGe becomes the selective etch of p-Si.In the case, the Si that in the grid of nFET 102, grows
1-yGe
y(y＞x) 106, and the Si that grows in the grid of pFET 104
1-zGe
z(z＜x) 108.Therefore, this method produces compression stress and produce tensile stress in the nFET raceway groove in the pFET raceway groove.For pFET, this method also can use Si:C to replace Si
1-zGe
z(z＜x) has better thermal stability although have than SiGe with Si:C.The value of x also can be used to adjust the Vt (threshold voltage) of pFET.Usually, this requires to reduce haloing and mixes in the pFET raceway groove, and this can further improve the performance of pFET.Figure 10 shows and carries out all method steps final resulting structures afterwards.Si
1-xGe
xThe 100th, with the inculating crystal layer of thereon part of grid pole, and after selective epitaxial growth this ply strain.
Figure 11 shows the third embodiment of the present invention, comprises the second embodiment method that is similar to, but the inculating crystal layer that wherein is used for nFET112 and pFET114 has different Ge content, for example is used for the p-Si of nFET112
1-xnGe
Xn110 and be used for the p-Si of pFET114
1-xpGe
Xp111.This method can be used the conventional method that covers pFET and nFET district respectively.In the case, the Si that in the grid of nFET, grows
1-yGe
y(y＞xn) 116, and the Si that grows in the grid of pFET
1-zGe
z(z＜xp) 118.Therefore, this method obtains the pFET raceway groove of compression and the nFET raceway groove of stretching.For pFET, this method also can use Si:C to replace Si
1-zGe
z(z＜x) 118, have better thermal stability although compare SiGe with Si:C.The value of x also can be used for adjusting the Vt of pFET.Usually, this requires to reduce haloing and mixes in the pFET raceway groove, and this can further improve the performance of pFET.Figure 10 shows final resulting structures.After selective epitaxial growth, be used for the Si of the part of grid pole on this inculating crystal layer
1-xnGe
Xn110 inculating crystal layers and this inculating crystal layer strain.The Si that after selective epitaxial growth, is used for the part of grid pole on this inculating crystal layer
1-xpGe
Xp111 inculating crystal layers and this inculating crystal layer strain.
Figure 12 shows the fourth embodiment of the present invention, use diverse ways can more easily in grid, form stressor layers by before the grid composition, forming stacked gate 120, as shown in figure 12, to obtain the structure identical with the 3rd embodiment with first, second.Although simulation shows that their frame mode is identical, the stress that produces by first, second and the 3rd embodiment method is greater than by 30% of the 4th embodiment generation.Strain SiGe or strain Si:C floor can have different stress ranks, different stress types and different Ge content respectively in nFET and pFET district.In nFET and pFET district, can have different stress ranks, different stress types and different Ge content as the big crystallite dimension p-Si 14 of the seed crystal that is used for epi SiGe or Si:C floor or p-SiGe 100.
Figure 13 shows the fifth embodiment of the present invention.The shortcoming of first to fourth embodiment is the crystal orientation difference in the crystal grain in the stacked gate.Owing in the grid of narrow width devices, have only a crystal grain, so this may cause the performance change of narrow width devices.For fear of this problem, method can be used the bonding with two monocrystalline silicon layers 132,134 to handle 130, two monocrystalline silicon layers of wafer to have separately bonding oxide/silicon interface 133 and thermal oxide/silicon interface 135, as shown in figure 12.This structure can be used for replacing the structure shown in the step 2 of first embodiment, and then all the other steps of first to fourth embodiment then are to make strained silicon.In order to utilize Smart-Cut (after bonding, to come cut crystal by adopting H to inject to damage monocrystalline silicon 132, the method of cutting/breaking then) along the injection that damages, this method can be before being bonded to processing wafer 130, deposit thin metal or silicide layer on gate oxide 131.Thin metal or silicide layer can be used for adjusting the threshold voltage vt of device, or acquisition is used for the thinner dielectric thickness of the gate oxide of given thickness.
Figure 14 shows the sixth embodiment of the present invention, uses the other method manufacturing to have the structure of two single crystalline layers shown in the 5th embodiment.This method is used the monocrystalline regrowth from the a-Si layer, starts near the seed crystal of grid.
The conventional wafer of step 1 from the monocrystalline c-Si substrate 140 then carries out conventional method, on the Si substrate, to make gate oxide level 142, and the thin layer of deposit a-Si 144 (for example ,～25nm thickness) then, as shown in figure 14.
Figure 15 shows the structure after the step 2, and step 2 comprises deposit and composition photoresist 150, at 152 places etching a-Si, and at 154 place's etching grid oxides.
Figure 16 shows the structure after the step 3, and step 3 comprises removes photoresist 150 and deposit a-Si (～25nm) 160, and show the seed crystal 162 that is used for the monocrystalline regrowth.
Figure 17 shows the structure after the step 4, step 4 comprises the composition photoresist, so that it still covers nFET district 172 and pFET district 174, and at 170 places etching a-Si up to gate oxide, so that isolate nFET district 172 and the pFET district 174 that is used for the crystalline silicon regrowth at 162 places, this 162 also is STI (shallow trench isolation from) district, so that the removal of gate oxide is no problem.
Figure 18 shows the structure after the step 5, and step 5 is included in 570 ℃ of annealing 10 hours down, with crystallization a-Si layer again, thereby forms single crystalline Si 180 people such as () Brian J.Greene.With this understanding, a-Si can regrowth as long as be～1 μ m in the horizontal, for high performance device, the overall width of device is usually less than 0.5 μ m.After this step, can use the method for describing among first to fourth embodiment to be manufactured on the device that has identical crystal orientation in their grid.The seed crystal position that is used for the regrowth of monocrystalline also is the position of STI, so that the removal of gate oxide is meticulous.
Make the structure of dislocation-free stressed channels and the several embodiments of the present invention and the variation of method although describe the gate stress that is used for by utilizing SiGe and/or Si:C in detail at body silicon and SOI MOS device at this, but to one skilled in the art, many selectivity designs open and the training centre hint of the present invention should be conspicuous.
Claims (26)
1. body silicon or silicon-on-insulator metal oxide semiconductor device have the gate stress that is produced by SiGe and/or Si:C, comprising:
The substrate of body silicon or silicon-on-insulator, and the gate dielectric layer on described substrate;
The stacked gate structure of SiGe and/or Si:C, wherein the structure by strain Si/SiGe in the described stacked gate structure or strain Si/Si:C produces stress, and described stacked gate structure has the first stress rete at big crystallite dimension Si on the described gate dielectric layer or SiGe, at the second stress rete and semiconductor or the conductor on the described second stress rete of strain SiGe on the described first stress rete or strain Si:C.
2. according to the device of claim 1, wherein in described stacked gate structure, produce stress by different semi-conducting materials and/or the different weight percentage by semi-conducting material.
3. according to the device of claim 1, on chip, make, and have in the raceway groove of wherein said nFET device in the raceway groove of tensile stress and pFET device and have compression stress with nFET device and pFET device.
4. according to the device of claim 3, the stacked gate structure of wherein said nFET device comprises the second stress rete of the strain SiGe on the first stress rete of monocrystalline silicon, and the stacked gate structure of described pFET device comprises the second stress rete of the strain Si:C on the first stress rete of monocrystalline silicon.
5. according to the device of claim 3, the stacked gate structure of wherein said nFET device comprises strain Si
1-xGe
xThe first stress rete on strain Si
1-yGe
yThe second stress rete, and the stacked gate structure of described pFET device comprises strain Si
1-xGe
xThe first stress rete on strain Si
1-zGe
zThe second stress rete, wherein y＞x and z＜x are to produce different stress.
6. according to the device of claim 5, the value of wherein selecting x is to adjust the threshold voltage vt of pFET.
7. according to the device of claim 5, wherein said Si
1-xGe
xBe to be used for described Si
1-xGe
xThe inculating crystal layer of the part of grid pole on the layer, and described Si
1-xGe
xLayer strain after selective epitaxial growth.
8. according to the device of claim 3, the stacked gate structure of wherein said nFET device comprises strain Si
1-xnGe
XnThe first stress rete on strain Si
1-yGe
yThe second stress rete, and the stacked gate structure of described pFET device comprises strain Si
1-xpGe
XpThe first stress rete on strain Si
1-zGe
zThe second stress rete, wherein y＞xn and z＜xp are to produce stress.
9. device according to Claim 8, wherein said Si
1-xnGe
XnBe to be used for described Si
1-xnGe
XnOn the inculating crystal layer of part of grid pole, the strain after selective epitaxial growth of described inculating crystal layer, and described Si
1-xpGe
XpBe to be used for described Si
1-xpGe
XpOn the inculating crystal layer of part of grid pole, the strain after selective epitaxial growth of described inculating crystal layer.
10. according to the device of claim 3, the stacked gate structure of wherein said nFET device comprises strain Si
1-xGe
xThe first stress rete on strain Si
1-yGe
yThe second stress rete, and the stacked gate structure of described pFET device comprises strain Si
1-xGe
xThe first stress rete on the second stress rete of strain Si:C, y＞x wherein is to produce different stress.
11., in the integrated circuit that comprises nFET device with described stacked gate structure and pFET device, make according to the device of claim 1.
12., in the integrated circuit that comprises nFET device, make with described stacked gate structure according to the device of claim 1.
13., in the integrated circuit that comprises pFET device, make with described stacked gate structure according to the device of claim 1.
14. according to the device of claim 1, wherein said semiconductor or conductor on the described second stress rete comprises polysilicon.
15. a method of making body silicon or silicon-on-insulator metal oxide semiconductor device, this method may further comprise the steps:
Deposition of amorphous silicon or polysilicon on the gate oxide on body silicon or the silicon-on-insulator substrate, and the polysilicon of annealing and having big crystallite dimension to obtain;
Deposit polycrystal SiGe on described polysilicon with big crystallite dimension is to form stacked gate;
Described stacked gate is carried out composition;
Deposited oxide then carries out chemico-mechanical polishing, on described top portions of gates, stops, and the deposit thin nitride layer;
Cover described thin nitride layer and described photoresist of composition and described thin nitride layer with photoresist, to cover pFET with described photoresist and described thin nitride layer;
NFET is carried out following processing: by the described thin nitride layer of etching and selectively the etching polycrystal SiGe grid that is used for nFET form nFET, remove described photoresist, carry out the selective epitaxial growth of strain single crystalline Si Ge, in nFET, fill polysilicon and carry out chemico-mechanical polishing, on described oxide, stop;
Deposit thin nitride layer and photoresist also repeat previous method step, but cover nFET and handle pFET this moment.
16., be included in described annealing steps oxidation and etching macromeritic polysilicon layer afterwards, with the thickness that obtains to select according to the method for claim 15.
17. a method of making body silicon or silicon-on-insulator metal oxide semiconductor device, this method may further comprise the steps:
Deposition of amorphous silicon or polysilicon on the gate oxide on body silicon or the silicon-on-insulator substrate, and the polysilicon of annealing and having big crystallite dimension to obtain;
Deposit polycrystal SiGe on described polysilicon with big crystallite dimension is to form stacked gate;
Described stacked gate is carried out composition;
Deposited oxide then carries out chemico-mechanical polishing, on described top portions of gates, stops, and the deposit thin nitride layer;
Cover described thin nitride layer and described photoresist of composition and described thin nitride layer with photoresist, to cover nFET with described photoresist and described thin nitride layer;
PFET is carried out following processing: by the described thin nitride layer of etching and selectively the etching polycrystal SiGe grid that is used for pFET form pFET, remove described photoresist, carry out the selective epitaxial growth of strain single crystalline Si Ge, in pFET, fill polysilicon and carry out chemico-mechanical polishing, on described oxide, stop;
Deposit thin nitride layer and photoresist also repeat previous method step, but cover pFET and handle nFET this moment.
18., be included in described annealing steps oxidation and etching macromeritic polysilicon layer afterwards, with the thickness that obtains to select according to the method for claim 17.
19. a method of making body silicon or silicon-on-insulator metal oxide semiconductor device, this method may further comprise the steps:
The big crystal grain polycrystalline Si of deposit relaxation on the gate oxide on body silicon or the silicon-on-insulator substrate
1-xGe
x, and anneal to obtain to have the polycrystalline Si of big crystallite dimension
1-xGe
x
In described polycrystalline Si with big crystallite dimension
1-xGe
xLast deposit polysilicon is to form stacked gate;
Described stacked gate is carried out composition;
Deposited oxide then carries out chemico-mechanical polishing, on described top portions of gates, stops, and the deposit thin nitride layer;
Cover described thin nitride layer and described photoresist of composition and described thin nitride layer with photoresist, to cover pFET with described photoresist and described thin nitride layer;
NFET is carried out following processing: by the described thin nitride layer of etching and selectively the etching polysilicon gate that is used for nFET form nFET, remove described photoresist, carry out the strain single crystalline Si
1-yGe
ySelective epitaxial growth, y＞x wherein fills polysilicon and carries out chemico-mechanical polishing in nFET, stop on described oxide;
Deposit thin nitride layer and photoresist also repeat previous method step, but cover nFET and handle pFET this moment, growth Si
1-zGe
z, z＜x wherein.
20. a method of making body silicon or silicon-on-insulator metal oxide semiconductor device, this method may further comprise the steps:
The big crystal grain polycrystalline Si of deposit relaxation on the gate oxide on body silicon or the silicon-on-insulator substrate
1-xGe
x, and anneal to obtain to have the polycrystalline Si of big crystallite dimension
1-xGe
x
In described polycrystalline Si with big crystallite dimension
1-xGe
xLast deposit polysilicon is to form stacked gate;
Described stacked gate is carried out composition;
Deposited oxide then carries out chemico-mechanical polishing, on described top portions of gates, stops, and the deposit thin nitride layer;
Cover described thin nitride layer and described photoresist of composition and described thin nitride layer with photoresist, to cover nFET with described photoresist and described thin nitride layer;
PFET is carried out following processing: by the described thin nitride layer of etching and selectively the etching polysilicon gate that is used for pFET form pFET, remove described photoresist, carry out the strain single crystalline Si
1-yGe
ySelective epitaxial growth, y＞x wherein fills polysilicon and carries out chemico-mechanical polishing in pFET, stop on described oxide;
Deposit thin nitride layer and photoresist also repeat previous method step, but cover pFET and handle nFET this moment, growth Si
1-zGe
z, z＜x wherein.
21. a method of making body silicon or silicon-on-insulator metal oxide semiconductor device, this device have the gate stress that is produced by SiGe and/or Si:C, this method may further comprise the steps:
Be formed on strain Si/SiGe or the SiGe that has stress at the interface of strain Si/Si:C and/or the laminated construction of Si:C in the laminated construction, wherein said laminated construction has the first stress rete at big crystallite dimension Si on the described gate dielectric layer or SiGe, at the second stress rete and semiconductor or the conductor on the described second stress rete of strain SiGe on the described first stress rete or strain Si:C; And
The described laminated construction of composition is to form the stacked gate structure of composition.
22. according to the device of claim 21, wherein said semiconductor or conductor on the described second stress rete comprises polysilicon.
23. a method of making body silicon or silicon-on-insulator metal oxide semiconductor device, this method may further comprise the steps:
Formation has the bonding of two monocrystalline silicon layers and handles wafer, and described two monocrystalline silicon layers have oxide/silicon interface separately;
Handle deposit polycrystal SiGe on the wafer at described bonding, to form stacked gate;
Described stacked gate is carried out composition;
Deposited oxide then carries out chemico-mechanical polishing, on described top portions of gates, stops, and the deposit thin nitride layer;
Cover described thin nitride layer and described photoresist of composition and described thin nitride layer with photoresist, to cover pFET with described photoresist and described thin nitride layer;
NFET is carried out following processing: by the described thin nitride layer of etching and selectively the etching polycrystal SiGe grid that is used for nFET form nFET, remove described photoresist, carry out the selective epitaxial growth of strain single crystalline Si Ge, in nFET, fill polysilicon and carry out chemico-mechanical polishing, on described oxide, stop;
Deposit thin nitride layer and photoresist also repeat previous method step, but cover nFET and handle pFET this moment.
24. a method of making body silicon or silicon-on-insulator metal oxide semiconductor device, this method may further comprise the steps:
Formation has the bonding of two monocrystalline silicon layers and handles wafer, and described two monocrystalline silicon layers have oxide/silicon interface separately;
Handle deposit polycrystal SiGe on the wafer at described bonding, to form stacked gate;
Described stacked gate is carried out composition;
Deposited oxide then carries out chemico-mechanical polishing, on described top portions of gates, stops, and the deposit thin nitride layer;
Cover described thin nitride layer and described photoresist of composition and described thin nitride layer with photoresist, to cover nFET with described photoresist and described thin nitride layer;
PFET is carried out following processing: by the described thin nitride layer of etching and selectively the etching polycrystal SiGe grid that is used for pFET form pFET, remove described photoresist, carry out the selective epitaxial growth of strain single crystalline Si Ge, in pFET, fill polysilicon and carry out chemico-mechanical polishing, on described oxide, stop;
Deposit thin nitride layer and photoresist also repeat previous method step, but cover pFET and handle nFET this moment.
25. a method of making body silicon or silicon-on-insulator metal oxide semiconductor device, this method may further comprise the steps:
On body silicon or silicon-on-insulator substrate, form gate oxide level, then the deposition of amorphous silicon layer;
Deposit and composition photoresist, the described amorphous silicon of etching, and the described gate oxide of etching;
Remove described photoresist and deposition of amorphous silicon;
Deposit and composition photoresist are covering the zone will form nFET and pFET, and the described amorphous silicon of etching is used for the zone of the nFET and the pFET of crystal recrystallization up to described gate oxide with isolation;
The described structure of annealing with the described amorphous silicon layer of recrystallization, thereby forms monocrystalline silicon;
Deposit polycrystal SiGe on described monocrystalline silicon is to form stacked gate;
Described stacked gate is carried out composition;
Deposited oxide then carries out chemico-mechanical polishing, on described top portions of gates, stops, and the deposit thin nitride layer;
Cover described thin nitride layer and described photoresist of composition and described thin nitride layer with photoresist, to cover nFET with described photoresist and described thin nitride layer;
PFET is carried out following processing: by the described thin nitride layer of etching and selectively the etching polycrystal SiGe grid that is used for pFET form pFET, remove described photoresist, carry out the selective epitaxial growth of strain single crystalline Si Ge, in pFET, fill polysilicon and carry out chemico-mechanical polishing, on described oxide, stop;
Deposit thin nitride layer and photoresist also repeat previous method step, but cover pFET and handle nFET this moment.
26. a method of making body silicon or silicon-on-insulator metal oxide semiconductor device, this method may further comprise the steps:
Deposition of amorphous silicon or polysilicon on the gate oxide on body silicon or the silicon-on-insulator substrate, and the polysilicon of annealing and having big crystallite dimension to obtain;
Deposit polycrystal SiGe on described polysilicon with big crystallite dimension is to form stacked gate;
Described stacked gate is carried out composition;
Deposited oxide then carries out chemico-mechanical polishing, on described top portions of gates, stops, and the deposit thin nitride layer;
Cover described thin nitride layer and described photoresist of composition and described thin nitride layer with photoresist, to cover nFET with described photoresist and described thin nitride layer;
Form pFET by the polycrystal SiGe that carbon is injected the pFET grid, and anneal to produce tensile stress in the injection region in the pFET grid.
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|---|---|---|---|
| US10/709,239 US7504693B2 (en) | 2004-04-23 | 2004-04-23 | Dislocation free stressed channels in bulk silicon and SOI CMOS devices by gate stress engineering |
| US10/709,239 | 2004-04-23 |
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| CN1691350A (en) | 2005-11-02 |
| TW201212244A (en) | 2012-03-16 |
| US20050236668A1 (en) | 2005-10-27 |
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