CN100555534C - The flat-panel monitor of large blade profile type cathode emitting structural and manufacture craft thereof - Google Patents
The flat-panel monitor of large blade profile type cathode emitting structural and manufacture craft thereof Download PDFInfo
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- CN100555534C CN100555534C CNB200610048507XA CN200610048507A CN100555534C CN 100555534 C CN100555534 C CN 100555534C CN B200610048507X A CNB200610048507X A CN B200610048507XA CN 200610048507 A CN200610048507 A CN 200610048507A CN 100555534 C CN100555534 C CN 100555534C
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Abstract
The present invention relates to a kind of manufacture craft of flat-panel monitor of large blade profile type cathode emitting structural, comprise by anode glass panel, cathode glass faceplate and all around glass enclose the sealed vacuum chamber that frame constitutes; Anode conductive layer and the phosphor powder layer of preparation on anode conductive layer are arranged on the anode glass panel; Supporting wall structure between anode glass panel and cathode glass faceplate and getter subsidiary component have control grid, carbon nanotube cathod and large blade profile type cathode emitting structural on cathode glass faceplate; Can further increase the electric field strength on carbon nanotube cathod top, improve the electronic transmitting efficiency of carbon nanotube cathod, when being integrated together, the grid and cathode structure further increases the control efficiency of grid, improve the display brightness of integral device, have that manufacturing process is reliable and stable, manufacture craft is simple, cost of manufacture is cheap, advantage of simple structure.
Description
Technical field
The invention belongs to the mutual crossing domain in technical field of flat panel display, microelectronics science and technology field, vacuum science and technical field and nanometer science and technology field, relate to the element manufacturing of panel field emission display, be specifically related to the content of element manufacturing aspect of the panel field emission display of carbon nanotube cathod, particularly a kind of flat-panel monitor of large blade profile type cathode emitting structural and manufacture craft thereof.
Background technology
Display device is a kind of crucial man-machine communication interface, and the display screen from simple instrument and meter display floater to high-tech highly sophisticated products notebook computer is being brought into play enormous function invariably.Wherein, the field-emitter display that utilizes carbon nano-tube to make as cathode material is a kind of novel flat panel display device, has high definition, and advantages such as high brightness and high-resolution are the research focuses in present flat panel display field always.Carbon nano-tube is a kind of tubulose material with unique geometric shape, and alive outside effect can be launched a large amount of electronics down, is a kind of quite outstanding cold cathode emissive material, has caused showing great attention to of numerous scientific research personnel already.
In the middle of the field emission display device of three-stage structure, when after applying appropriate voltage on the grid, will form powerful electric field strength on the carbon nano-tube top, force carbon nano-tube to launch a large amount of electronics.Wherein the shape of carbon nanotube cathod also has certain influence for the formation of top electric field strength.Generally speaking, the carbon nano-tube that is positioned at the cathode edge position is always launched more electronics, and this is that formed electric field strength is also bigger because bigger at the degree of crook of marginal portion negative electrode; And the carbon nano-tube that is positioned at the cathode center position will be launched some electronics relatively less, perhaps emitting electrons not.The phenomenon that this just unique marginal position is launched a large amount of electronics.In the process of element manufacturing, need think better of this factor so, and be improved and utilize.On the other hand, because grid is the element of comparison key, it is controlling the electronics emission of carbon nano-tube, so how grid structure and cathode construction are organically combined, further improve the control efficiency of the control performance and the improvement grid of grid, promote the Highgrade integration development of integral device, this also is one of problem that is worth pondering deeply.
In addition, in the middle of the panel field emission display spare of three-stage structure, guaranteeing that grid structure has carbon nanotube cathod under the prerequisite of good control action, also need to reduce as much as possible the total device cost, carry out reliable and stable, with low cost, function admirable, high quality devices is made.
Summary of the invention
The objective of the invention is to overcome the shortcoming and defect that exists in the above-mentioned flat-panel display device and provide a kind of with low cost, manufacturing process is reliable and stable, be made into the power height, the flat-panel monitor and the manufacture craft thereof of large blade profile type cathode emitting structural simple in structure.
The object of the present invention is achieved like this:
A kind of flat-panel monitor of large blade profile type cathode emitting structural, comprise by anode glass panel, cathode glass faceplate and all around glass enclose the sealed vacuum chamber that frame constitutes; Anode conductive layer and the phosphor powder layer of preparation on anode conductive layer are arranged on the anode glass panel; Supporting wall structure between anode glass panel and cathode glass faceplate and getter subsidiary component have grid lead layer, carbon nanotube cathod and large blade profile type cathode emitting structural on cathode glass faceplate.
The backing material of described large blade profile type cathode emitting structural is glass, just cathode glass faceplate; Metal level after the etching on the cathode glass faceplate forms the cathode leg layer; Silicon dioxide layer after the etching on the cathode glass faceplate forms separator; The silicon dioxide of the mid portion of separator is etched away, and exposes the grid lead layer of bottom; Separator is a plane from its end face of vertical structure, and its side is perpendicular to cathode glass faceplate, has circular port in the middle of the transversary separator; Metal level after the etching above the separator forms the grid lead layer; Silicon dioxide layer after the etching above the grid lead layer forms the grid cover layer; Doped polysilicon layer after the etching above the cathode leg layer forms the cathode substrate layer; The cathode substrate layer is a column type structure, and its lower surface and cathode leg layer contact, and its upper surface is contacted with the centre of cathode conductive layer; Metal level after the etching above the cathode substrate layer forms cathode conductive layer; Cathode conductive layer after the etching is a large blade profile type structure, promptly is a circular ring type structure, present vacant state, the centre is a solid disc type shape, be positioned on the upper surface of cathode substrate layer, centre and have three blade profile metals on every side between the circular ring type structure be used for circular ring type structure and centre on every side are connected with each other, and the circular ring type structure is in vacant state all the time around being used for supporting; Made of carbon nanotubes in cathode conductive layer around above the circular ring type structure.
The fixed position of described large blade profile type cathode emitting structural is for being fixed on the cathode glass faceplate, and grid and cathode construction are integrated together, grid is positioned at the top of carbon nanotube cathod, controlling the electronics emission of carbon nano-tube, the cathode leg layer is a metallic gold, silver, aluminium, chromium, molybdenum, nickel, cobalt, copper, the grid lead layer is a metallic gold, silver, nickel, chromium, molybdenum, tin, cobalt, grid lead layer and cathode leg layer are mutual vertical arrangements, the doping type of cathode substrate layer is the p type or is the n type that cathode conductive layer is a metallic gold, silver, chromium, molybdenum, nickel, cobalt.
A kind of manufacture craft of flat-panel monitor of large blade profile type cathode emitting structural is characterized in that, its manufacture craft is as follows:
1) making of cathode glass faceplate: whole plate glass is carried out scribing, produce cathode glass faceplate;
2) making of cathode leg layer: on cathode glass faceplate, prepare a metal level, form the cathode leg layer after the etching;
3) making of separator: on cathode glass faceplate, prepare a silicon dioxide layer, form separator after the etching;
4) making of grid lead layer: end face is prepared a metal level on separator, forms the grid lead layer after the etching;
5) the tectal making of grid: on the grid lead layer, prepare a silicon dioxide layer, form the grid cover layer after the etching;
6) making of cathode substrate layer and cathode conductive layer: the layer of metal cobalt after the etching forms cathode conductive layer; N type doped polysilicon layer after the etching forms the cathode substrate layer;
7) cleaning surfaces of large blade profile type cathode emitting structural is handled: clean is carried out on the surface to large blade profile type cathode emitting structural, removes impurity and dust;
8) preparation of carbon nano-tube: with made of carbon nanotubes in cathode conductive layer around above the circular ring type structure;
9) making of anode glass panel: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce the anode glass panel;
10) making of anode conductive layer: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
11) making of insulation paste layer: at the non-display area printing insulation paste layer of anode conductive layer;
12) making of phosphor powder layer: the viewing area printing phosphor powder layer on anode conductive layer;
13) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure and all around glass enclose frame and be assembled together, and getter is put in the middle of the cavity, fix with glass powder with low melting point;
14) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
Described step 3 is specially prepares a silicon dioxide layer on cathode glass faceplate, form separator after the etching; The silicon dioxide of the mid portion of separator is etched away, and exposes the cathode leg layer of bottom; Separator is a plane from its end face of vertical structure, and its side is perpendicular to cathode glass faceplate, has circular port in the middle of the transversary separator.
Described step 6 is prepared a n type doped polysilicon layer above being specially cathode leg layer in the circular port of separator, and then end face is prepared a layer of metal cobalt on n type doped polysilicon layer; During etching, its etching is first etching cobalt layer, etching n type doped polysilicon layer then in proper order; Layer of metal cobalt after the etching forms cathode conductive layer; N type doped polysilicon layer after the etching forms the cathode substrate layer; The cathode substrate layer is a column type structure, and its lower surface and cathode leg layer contact, and its upper surface is contacted with the centre of cathode conductive layer; Cathode conductive layer is a large blade profile type structure, promptly is a circular ring type structure, present vacant state, the centre is a solid disc type shape, be positioned on the upper surface of cathode substrate layer, centre and have three blade profile metals on every side between the circular ring type structure be used for circular ring type structure and centre on every side are connected with each other, and the circular ring type structure is in vacant state all the time around being used for supporting.
Described step 11 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking, baking temperature: 150 ℃, the retention time: 5 minutes, afterwards, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes.
Described step 12 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast baking temperature: 120 ℃, the retention time: 10 minutes.
The device that described step 14 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
The present invention has following good effect:
At first, in described large blade profile type cathode emitting structural, grid plays strong control action for the electronics emission of carbon nanotube cathod.When after applying appropriate voltage on the grid, will form powerful electric field strength on the top of carbon nanotube cathod, force carbon nano-tube to launch a large amount of electronics.The grid of making is positioned at the side of carbon nano-tube, helps further to strengthen the electric field strength of carbon nano-tube top end surface, helps further improving the electronic transmitting efficiency of carbon nanotube cathod; Can also further shorten distance between grid and cathode, thereby reduce working voltage of device; When the grid and cathode structure is integrated together, further increase the control efficiency of grid, improve the display brightness of integral device.
Secondly, in described large blade profile type cathode emitting structural, the shape of carbon nanotube cathod has been done further optimization process.Made the large blade profile type structure, and be in vacant state, prepared carbon nanotube cathod then in the above, like this, made full use of the phenomenon that the marginal position in the carbon nanotube cathod is launched a large amount of electronics on the one hand, further strengthened the electric field strength on carbon nano-tube top,, greatly increased effective emission area of carbon nanotube cathod on the other hand because a large amount of emitting electrons of the interior lateral surface carbon nanotube cathod of annulus;
The 3rd, in described large blade profile type cathode emitting structural, on the grid lead layer, prepared the grid cover layer, both avoided of the influence of other impurity for grid structure, simultaneously also help avoiding the generation of short circuit phenomenon between the grid and cathode, improved the power that is made into of integral device;
In addition, in described large blade profile type cathode emitting structural, do not adopt special structure fabrication material, do not adopt special device making technics yet, this has just further reduced the cost of manufacture of whole flat-panel display device to a great extent, simplify the manufacturing process of device, can carry out large-area element manufacturing, helped carrying out business-like large-scale production.
Description of drawings
Fig. 1 has provided the vertical structure schematic diagram of large blade profile type cathode emitting structural.
Fig. 2 has provided the transversary schematic diagram of large blade profile type cathode emitting structural.
Fig. 3 has provided the cathode conductive layer structural representation of large blade profile type cathode emitting structural.
Fig. 4 has provided and has had structural representation large blade profile type cathode emitting structural, the carbon nanotube field emission flat-panel screens.
Embodiment
Below in conjunction with drawings and Examples the present invention is further specified, but the present invention is not limited to these embodiment.
Described a kind of flat-panel monitor that has large blade profile type cathode emitting structural, comprise by anode glass panel 9, cathode glass faceplate 1 and all around glass enclose the sealed vacuum chamber that frame 14 is constituted; Anode conductive layer 10 and the phosphor powder layer 12 of preparation on anode conductive layer are arranged on the anode glass panel; Knee wall 13 structures between anode glass panel and cathode glass faceplate and getter 15 subsidiary components.Grid lead layer 4, carbon nano-tube 8 negative electrodes and large blade profile type cathode emitting structural are arranged on cathode glass faceplate.
Described large blade profile type cathode emitting structural comprises cathode glass faceplate 1, cathode leg layer 2, separator 3, grid lead layer 4, grid cover layer 5, cathode substrate layer 6, cathode conductive layer 7 and carbon nano-tube 8.
The backing material of described large blade profile type cathode emitting structural is a glass, as soda-lime glass, and Pyrex, just cathode glass faceplate 1; Metal level after the etching on the cathode glass faceplate forms cathode leg layer 2; Silicon dioxide layer after the etching on the cathode glass faceplate forms separator 3; The silicon dioxide of the mid portion of separator is etched away, and exposes the grid lead layer 4 of bottom; Separator is a plane from its end face of vertical structure, and its side is perpendicular to cathode glass faceplate, has circular port in the middle of the transversary separator; Metal level after the etching above the separator forms the grid lead layer; Silicon dioxide layer after the etching above the grid lead layer forms grid cover layer 5; Doped polysilicon layer after the etching above the cathode leg layer forms cathode substrate layer 6; The cathode substrate layer is a column type structure, and its lower surface and cathode leg layer contact, and its upper surface is contacted with the centre of cathode conductive layer; Metal level after the etching above the cathode substrate layer forms cathode conductive layer 7; Cathode conductive layer after the etching is a large blade profile type structure, promptly is a circular ring type structure, present vacant state, the centre is a solid disc type shape, be positioned on the upper surface of cathode substrate layer, centre and have three blade profile metals on every side between the circular ring type structure be used for circular ring type structure and centre on every side are connected with each other, and the circular ring type structure is in vacant state all the time around being used for supporting; Carbon nano-tube 8 preparation in cathode conductive layer around above the circular ring type structure.
The fixed position of described large blade profile type cathode emitting structural is for being fixed on the cathode glass faceplate, and grid and cathode construction be integrated together, and grid is positioned at the top of carbon nanotube cathod, is controlling the electronics emission of carbon nano-tube.The cathode leg layer can be metallic gold, silver, aluminium, chromium, molybdenum, nickel, cobalt, copper.The grid lead layer can be metallic gold, silver, nickel, chromium, molybdenum, tin, cobalt.Grid lead layer and cathode leg layer are mutual vertical arrangements.The doping type of cathode substrate layer can be the p type, also can be the n type.Cathode conductive layer can be metallic gold, silver, chromium, molybdenum, nickel, cobalt.
A kind of manufacture craft that has the flat-panel monitor of large blade profile type cathode emitting structural, its manufacture craft is as follows:
1) making of cathode glass faceplate 1: to whole plate glass, as soda-lime glass, Pyrex carry out scribing, produce cathode glass faceplate;
2) making of cathode leg layer 2: on cathode glass faceplate, prepare a metal level,, form the cathode leg layer after the etching as the chromium metal level;
3) making of separator 3: on cathode glass faceplate, prepare a silicon dioxide layer, form separator after the etching;
4) making of grid lead layer 4: end face is prepared a metal level on separator, as the metal nickel dam, forms the grid lead layer after the etching;
5) making of grid cover layer 5: on the grid lead layer, prepare a silicon dioxide layer, form the grid cover layer after the etching;
6) making of cathode substrate layer 6 and cathode conductive layer 7: the layer of metal cobalt after the etching forms cathode conductive layer; N type doped polysilicon layer after the etching forms the cathode substrate layer;
7) cleaning surfaces of large blade profile type cathode emitting structural is handled: clean is carried out on the surface to large blade profile type cathode emitting structural, removes impurity and dust;
8) preparation of carbon nano-tube 8: with made of carbon nanotubes in cathode conductive layer around above the circular ring type structure;
9) making of anode glass panel 9: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce the anode glass panel;
10) making of anode conductive layer 10: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
11) making of insulation paste layer 11: at the non-display area printing insulation paste layer of anode conductive layer;
12) making of phosphor powder layer 12: the viewing area printing phosphor powder layer on anode conductive layer;
13) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure 13 and all around glass enclose frame 14 and be assembled together, and getter 15 is put in the middle of the cavity, fix with glass powder with low melting point.Around face glass, smeared glass powder with low melting point, fixed with clip;
14) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
Described step 3 is specially prepares a silicon dioxide layer on cathode glass faceplate, form separator after the etching; The silicon dioxide of the mid portion of separator is etched away, and exposes the cathode leg layer of bottom; Separator is a plane from its end face of vertical structure, and its side is perpendicular to cathode glass faceplate, has circular port in the middle of the transversary separator.
Described step 6 is prepared a n type doped polysilicon layer above being specially cathode leg layer in the circular port of separator, and then end face is prepared a layer of metal cobalt on n type doped polysilicon layer; During etching, its etching is first etching cobalt layer, etching n type doped polysilicon layer then in proper order; Layer of metal cobalt after the etching forms cathode conductive layer; N type doped polysilicon layer after the etching forms the cathode substrate layer; The cathode substrate layer is a column type structure, and its lower surface and cathode leg layer contact, and its upper surface is contacted with the centre of cathode conductive layer; Cathode conductive layer is a large blade profile type structure, promptly is a circular ring type structure, present vacant state, the centre is a solid disc type shape, be positioned on the upper surface of cathode substrate layer, centre and have three blade profile metals on every side between the circular ring type structure be used for circular ring type structure and centre on every side are connected with each other, and the circular ring type structure is in vacant state all the time around being used for supporting.
Described step 11 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking (baking temperature: 150 ℃, retention time: 5 minutes) afterwards, be placed on and carry out high temperature sintering (sintering temperature: 580 ℃, retention time: 10 minutes) in the sintering furnace;
Described step 12 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast (baking temperature: 120 ℃, the retention time: 10 minutes);
The device that described step 14 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
Claims (6)
1, a kind of flat-panel monitor of large blade profile type cathode emitting structural, comprise by anode glass panel [9], cathode glass faceplate [1] and all around glass enclose the sealed vacuum chamber that frame [14] is constituted; Anode conductive layer [10] and the phosphor powder layer [12] of preparation on anode conductive layer are arranged on the anode glass panel; Supporting wall structure between anode glass panel and cathode glass faceplate [13] and getter subsidiary component [15] is characterized in that: the backing material of described large blade profile type cathode emitting structural is cathode glass faceplate [1]; Metal level after the etching on the cathode glass faceplate forms cathode leg layer [2]; Silicon dioxide layer after the etching on the cathode glass faceplate forms separator [3]; The silicon dioxide of the mid portion of separator [3] is etched away, and exposes the cathode leg layer [2] of bottom; Separator is a plane from its end face of vertical structure, and its side is perpendicular to cathode glass faceplate, has circular port in the middle of the transversary separator; Metal level after the etching above the separator forms grid lead layer [4]; Silicon dioxide layer after the etching above the grid lead layer forms grid cover layer [5]; Doped polysilicon layer after the etching above the cathode leg layer forms cathode substrate layer [6]; The cathode substrate layer is a column type structure, and its lower surface and cathode leg layer contact, and its upper surface is contacted with the centre of cathode conductive layer; Metal level after the etching above the cathode substrate layer forms cathode conductive layer [7]; Cathode conductive layer after the etching is a large blade profile type structure, around it is a circular ring type structure, present vacant state, the centre is a solid disc type shape, be positioned on the upper surface of cathode substrate layer [6], centre and have three blade profile metals on every side between the circular ring type structure be used for circular ring type structure and centre on every side are connected with each other, and the circular ring type structure is in vacant state all the time around being used for supporting; Carbon nano-tube [8] preparation in cathode conductive layer around above the circular ring type structure.
2, the flat-panel monitor of large blade profile type cathode emitting structural according to claim 1, it is characterized in that: the fixed position of described large blade profile type cathode emitting structural is for being fixed on the cathode glass faceplate [1], and grid lead layer [4] and large blade profile type cathode emitting structural are integrated together, grid lead layer [4] is positioned at the top of carbon nanotube cathod, controlling the electronics emission of carbon nano-tube, the cathode leg layer is a metallic gold, silver, aluminium, chromium, molybdenum, nickel, cobalt, one of copper, the grid lead layer is a metallic gold, silver, nickel, chromium, molybdenum, tin, one of cobalt, grid lead layer and cathode leg layer are mutual vertical arrangements, the doping type of cathode substrate layer is the p type or is the n type that cathode conductive layer is a metallic gold, silver, chromium, molybdenum, nickel, one of cobalt.
3, a kind of manufacture craft of flat-panel monitor of large blade profile type cathode emitting structural is characterized in that, its manufacture craft is as follows:
1) making of cathode glass faceplate [1]: whole plate glass is carried out scribing, produce cathode glass faceplate;
2) making of cathode leg layer [2]: on cathode glass faceplate, prepare a metal level, form the cathode leg layer after the etching;
3) making of separator [3]: on cathode glass faceplate, prepare a silicon dioxide layer, form separator after the etching; The silicon dioxide of the mid portion of separator is etched away, and exposes the cathode leg layer of bottom; Separator is a plane from its end face of vertical structure, and its side is perpendicular to cathode glass faceplate, has circular port in the middle of the transversary separator;
4) making of grid lead layer [4]: end face is prepared a metal level on separator, forms the grid lead layer after the etching;
5) making of grid cover layer [5]: on the grid lead layer, prepare a silicon dioxide layer, form the grid cover layer after the etching;
6) making of cathode substrate layer [6] and cathode conductive layer [7]: the layer of metal cobalt after the etching forms cathode conductive layer; N type doped polysilicon layer after the etching forms the cathode substrate layer; Be specially and prepare a n type doped polysilicon layer above the cathode leg layer in the circular port of separator, and then end face is prepared a layer of metal cobalt on n type doped polysilicon layer; During etching, its etching is first etching cobalt layer, etching n type doped polysilicon layer then in proper order; Layer of metal cobalt after the etching forms cathode conductive layer; N type doped polysilicon layer after the etching forms the cathode substrate layer; The cathode substrate layer is a column type structure, and its lower surface and cathode leg layer contact, and its upper surface is contacted with the centre of cathode conductive layer; Cathode conductive layer is a large blade profile type structure, promptly is a circular ring type structure, present vacant state, the centre is a solid disc type shape, be positioned on the upper surface of cathode substrate layer, centre and have three blade profile metals on every side between the circular ring type structure be used for circular ring type structure and centre on every side are connected with each other, and the circular ring type structure is in vacant state all the time around being used for supporting;
7) cleaning surfaces of large blade profile type cathode emitting structural is handled: clean is carried out on the surface to large blade profile type cathode emitting structural, removes impurity and dust;
8) preparation of carbon nano-tube [8]: with made of carbon nanotubes in cathode conductive layer around above the circular ring type structure;
9) making of anode glass panel [9]: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce the anode glass panel;
10) making of anode conductive layer [10]: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
11) making of insulation paste layer [11]: at the non-display area printing insulation paste layer of anode conductive layer;
12) making of phosphor powder layer [12]: the viewing area printing phosphor powder layer on anode conductive layer;
13) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure [13] and all around glass enclose frame [14] and be assembled together, and getter [15] is put in the middle of the cavity, fix with glass powder with low melting point;
14) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
4, the manufacture craft of the flat-panel monitor of large blade profile type cathode emitting structural according to claim 3 is characterized in that: described step 11 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking, baking temperature: 150 ℃, the retention time: 5 minutes, afterwards, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes.
5, the manufacture craft of the flat-panel monitor of large blade profile type cathode emitting structural according to claim 3 is characterized in that: described step 12 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast baking temperature: 120 ℃, the retention time: 10 minutes.
6, the manufacture craft of the flat-panel monitor of large blade profile type cathode emitting structural according to claim 3 is characterized in that: the device that described step 14 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
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| CNB200610048507XA CN100555534C (en) | 2006-08-02 | 2006-08-02 | The flat-panel monitor of large blade profile type cathode emitting structural and manufacture craft thereof |
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