CN100553853C - Plate cutting method and laser processing device - Google Patents
Plate cutting method and laser processing device Download PDFInfo
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- CN100553853C CN100553853C CNB2006100886357A CN200610088635A CN100553853C CN 100553853 C CN100553853 C CN 100553853C CN B2006100886357 A CNB2006100886357 A CN B2006100886357A CN 200610088635 A CN200610088635 A CN 200610088635A CN 100553853 C CN100553853 C CN 100553853C
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
- B23K26/0613—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams having a common axis
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/359—Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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Abstract
A kind of illuminating laser beam is to cut off the method for plate body on plate bodys such as semiconductor wafer, and the raising cut-off velocity is to improve the productivity ratio by the electronic component of cutting apart manufacturing.Make plate body is had the laser beam of absorbefacient the 1st wavelength and plate body had the laser beam optically focused and being radiated on the plate body simultaneously of the 2nd wavelength of permeability.Adjust light-gathering optics, form the focal point of the 1st wavelength laser bundle at the surface element of plate body, at the inner focal point that forms the 2nd wavelength laser bundle of plate body.Surface element produces by linear absorption and decomposes or form sex change, and inner the generation by the multi-photon absorption formed sex change, thereby forms the stress generation area respectively.After having shone laser beam along cut-off rule, the additional mechanical impulsive force is cut apart plate body along the track while scan of laser beam.
Description
Technical field
The present invention relates to cut off the plate cutting method of plate body and the laser beam generating device that this cutting-off method uses, the particularly cutting-off method of the semiconductor wafer when dividing semiconductor wafer is made semiconductor chip and the employed laser beam generating device of this method along predetermined road (street) (cut-out line) illuminating laser beam.
Background technology
In the semiconductor devices manufacturing engineering, roughly the semiconductor wafer of circular plate shape is divided into a plurality of zones by the road that is latticed arrangement in its surface.On the zone of this division, form circuit such as IC, LSI respectively, by cut off semiconductor wafer along the road, separate the zone that has formed circuit respectively, thereby make semiconductor chip.In order to cut off semiconductor wafer along the road, use the topping machanism that is called as cutting machine usually.This topping machanism have maintenance as the chuck table of the semiconductor wafer of machined object, be used for the semiconductor wafer and the cut-out parts that cut that remain on this chuck table and make mobile chuck table and cut off the moving-member that parts relatively move and constitute.Cut off parts and have rotating shaft that rotates at a high speed and the cutting tip that is installed on this.Cutting tip is made of discoid pedestal and the annular cutting edge that is installed on this pedestal side peripheral part.Cutting edge, adopting electroforming is for example particle diameter that diamond abrasive grain about 3 μ m is fixed on the pedestal, forms the thickness about 15 μ m.
In nearest a period of time,, produce the semiconductor wafer of the mode of stacked low dielectric constant insulator on the body surfaces of semiconductor wafers such as silicon wafer, for practicality in order more fine to form circuit such as IC, LSI.As low dielectric constant insulator, use permittivity ratio SiO
2(for example, about k=2.5 to 3.6) material that film (dielectric constant k=about 4.1) is low.As such low dielectric constant insulator, for example, can enumerate SiOF, BSG (SiOB), contain the film of polysiloxanes inorganic matters such as (HSQ) series of H, as the film of the organic matter series of polymer films such as polyimides series, figured silk fabrics alkene block series, polytetrafluoroethylene (PTFE) series with contain the porous silica films such as polysiloxanes of methyl.
With above-mentioned cutting machine be breaking at surface element stacked during the semiconductor wafer of low dielectric constant insulator as described above, because low dielectric constant insulator is highly brittle, therefore, often peel off from the semiconductor wafer main body as the low dielectric constant of superficial layer at the road near zone.And semiconductor wafer has the tendency of thin plateization, because the mechanical strength reduction, so often the wafer main body is damaged because of the cut-out of cutting machine.For such semiconductor wafer, use is very suitable by the laser disconnecting device that illuminating laser beam replacement cutting machine cuts off semiconductor wafer.
Fig. 4 is the synoptic diagram of the wafer cutting-off method of expression laser disconnecting device.In Fig. 4 (a), irradiation has the laser beam of absorbability wavelength, to cut off semiconductor wafer.When the focal point of the surface element setting laser bundle of semiconductor wafer 101, the linear absorption that caused by laser beam mainly takes place in the surface element of semiconductor wafer 101, melts this part, forms perforated portion.As required, light-gathering optics 103 is moved to the vertical direction below, thereby focal point also move, and the perforated portion that is formed by melting of member is prolonged downwards downwards.If laser beam is scanned along the road, then perforated portion extends along the road, forms the ditch portion along the road on wafer surface.After having formed this ditch portion, during mechanical impact force such as addition bend or stretching, can be starting point generation crackle just with ditch portion, dividing semiconductor wafer.For example, the spy opens clear 56-129340 communique and is putting down in writing and use the laser beam with above-mentioned absorbability wavelength to cut off semiconductor wafer.
In Fig. 4 (b), the laser beam that irradiation has the permeability wavelength cuts off semiconductor wafer.When the focal point of the inner setting laser beam of semiconductor wafer 101, the multi-photon that the interior zone of semiconductor wafer 101 mainly takes place to be caused by laser beam absorbs, and is rotten thereby the material of this part is formed.As required, move above or below the vertical direction by making light-gathering optics 103, focal point also upward or the below move, make to absorb the upgrading zone that produces by multi-photon and vertically prolong.If laser beam is scanned along the road, then modification area extends along the road, forms along the roughly wire in road or roughly banded modification area in wafer inside.After forming this modification area, during mechanical impact forces such as addition bend or stretching, can come dividing semiconductor wafer to be that crackle takes place starting point near the modification area that produces thermal stress.For example, the spy opens the 2002-205180 communique and is putting down in writing and adopt the laser beam with above-mentioned permeability wavelength to cut off semiconductor wafer.
[patent documentation 1] spy opens clear 56-129340
[patent documentation 2] spy opens 2005-28438
[patent documentation 3] spy opens 2002-192367
[patent documentation 4] spy opens 2002-205180
[patent documentation 5] spy opens 2003-88973
[patent documentation 6] spy opens 2003-88978
[patent documentation 7] spy opens 2003-88979
[patent documentation 8] spy opens 2004-188475
In the shearing device that has used the existing laser beam shown in Fig. 4 (a) and Fig. 4 (b), in order to form the abundant big perforated portion or the modification area that can become the starting point that cracks, be necessary to shine at the roughly the same position on the road short-pulse laser of the umber of pulse more than the suitable number of times, the time that the roughly the same position during laser beam flying on the road stops is elongated.That is,,, cause producing the problem of the rerum natura of damaging section forming ditch portion on the semiconductor wafer surface or, producing the thermal denaturation layer that exists with ... pulse width at the irradiated site periphery in that semiconductor wafer is inner when forming modification area for dividing semiconductor wafer.
Summary of the invention
The application's invention is developed for solving above-mentioned problem, its purpose be to provide a kind of can be with femtosecond laser pulse, do not damage the rerum natura of section, realize the laser beam generating device that cutting-off method that plate body such as semiconductor wafer is cut apart and this cutting-off method use at high speed.
In order to solve above-mentioned technical task,, make from the laser beam of the short-pulse laser of a plurality of wavelength of the top irradiation of plate body surface element and inner optically focused at plate body if according to the application's invention.Especially, each zone of dividing according to the road that is latticed arrangement forms in the semiconductor wafer of circuit from the teeth outwards, makes laser beam optically focused on the road of a plurality of wavelength that shine from the top of semiconductor wafer, rule along the road, thus dividing semiconductor wafer.
When making laser beam be radiated at plate body, use at least simultaneously is positioned at the wavelength of plate body absorption region and is positioned at the wavelength that sees through the zone, carries out the elaboration that is undertaken by laser beam simultaneously in the surface element and the inside of plate body.
If according to the application's invention, even the permeability wavelength also because of multi-photon absorption etc. the high power optically focused density state that the prediction absorptivity improves takes place, so that make light beam arrive the inside of plate body and carry out near the modification of the material composition the optically focused zone at a high speed.On the other hand, with the condition enactment power optically focused density lower, seek the absorption of heat at surface element than inside.Mainly produce linear absorption at the surface element of plate body with the short-pulse laser of absorbability wavelength, and process in the mode of the modification portion of the perforated portion that form to decompose or denaturation, simultaneously mainly produce multi-photon with the short-pulse laser of permeability wavelength and absorb the formation modification area in the inside of plate body.In plate body, compression stress acts on the position of laser beam condensation, tensile stress acts on around it simultaneously, owing to residual stress takes place in the thermal stress effect, thereby be starting point with the near surface machining area that is formed on the plate body surface element, owing to causing crackle, residual stress is easy to propagate into modification area.If make the laser beam scanning direction predetermined in the plate body upper edge, then crackle carries out in plate body along its track.If plate body is thinner, then just can cut apart plate body owing to only form crackle.If plate body is thicker, then behind the end of scan of laser beam,, can cut apart plate body by mechanical impact force such as addition bend or stretching on semiconductor wafer.
If invention according to the application, the plate body surface is formed near surface machining area and modification area in vertical direction simultaneously, it is starting point that the residual stress that produces owing to the optically focused of laser beam causes crackle to be easy to the near surface machining area, propagate to modification area, so predetermined direction scans in the plate body upper edge only to make laser beam, or the external force of scanning back additional mechanical, just can cut apart plate body at high speed.When dividing semiconductor wafer, because can the high speed dividing semiconductor wafer, thereby can improve the productivity ratio of semiconductor chip.
If according to the application's invention, owing to can be suppressed at lower level to the power optically focused density of the short-pulse laser of plate body surface element, so can reduce the machining object amount of removing of plate body surface element.Owing to illuminating laser beam on semiconductor wafer produces fragment (evaporant is removed thing), but if use the present invention, owing to can reduce the generating capacity of fragment, so can prevent from the weld zone of semiconductor chip formation etc., to adhere to fragment certain degree.And, near surface element, do not melt the decomposition of solidifying again and form ditch by almost having, and can reduce the generating capacity of fragment, so can prevent to cause the fine crack generation of the reliability decrease of semiconductor element certain degree.By preventing of realizing that fragment adheres to, fine crack takes place prevents etc., thereby can improve the yield rate of semiconductor chip.
Owing to can be suppressed at lower level to the power optically focused density of the short-pulse laser of plate body surface element, narrow down so can make along the working width in road, can more extensively be chosen in the area of the semiconductor chip that occupies on the semiconductor wafer.And, owing to adopting short-pulse laser aspect the cutting apart of semiconductor wafer, so can prevent near the fire damage of the film forming layer semiconductor wafer surface.
Because its formation can change arbitrarily that the energy and having of the laser beam with the wavelength under the absorption region of mainly carrying out linear absorption carries out mainly that multi-photon absorbs sees through the ratio of energy separately of one or more laser beams of the wavelength under the zone, so can set best processing conditions according to the material of the plate body of processing object.
Because it constitutes: can make to have the laser beam pulses of plate body mainly being carried out the wavelength under the absorption region of linear absorption, than having one or more laser beam pulses that see through the wavelength under zone delay scheduled time only that plate body is carried out mainly that multi-photon absorbs, be radiated on the plate body, thereby can not influence the machining state of surface element, can arrive plate body inside so that have the laser beam that sees through the affiliated wavelength in zone, and can improve working (machining) efficiency.
The light-gathering optics of laser beam generating device be can move at the optical axis direction of laser beam, thereby can near surface machining area and modification area be prolonged along direction perpendicular to the plate body surface, and can be corresponding to the plate cutting with all thickness.
Description of drawings
Fig. 1 is the key diagram of expression as tabular semi-conductive silicon wafer segmentation process.
Fig. 2 is the figure that employed laser beam generating device one example of expression cutting-off method of the present invention constitutes.
Fig. 3 is the figure of other examples of the employed laser beam generating device formation of expression cutting-off method of the present invention.
Fig. 4 is the synoptic diagram of the wafer cutting-off method of expression laser disconnecting device.
The specific embodiment
Below, with reference to accompanying drawing, illustrate in greater detail the best example of the partition processing method of the semiconductor wafer that constitutes according to the present invention.
[embodiment 1]
Fig. 1 is the key diagram of expression as tabular semi-conductive silicon wafer segmentation process.The state that Fig. 1 (a) expression adopts laser beam to carry out semiconductor wafer processing, Fig. 1 (b) expression is along the section in the road of the semiconductor wafer of processing.Semiconductor wafer 1 adopts vacuum chuck to attract on the not shown wafer table that is equipped on the XY worktable usually.Carry out optically focused from the laser beam of LASER Light Source almost parallel incident by light-gathering optics 2, and to wafer illumination.Comprise from the laser beam of LASER Light Source irradiation: to as the laser beam 3 of the 1st wavelength wafer, that be positioned at the absorption region of plate body be positioned at the laser beam 4 of the 2nd wavelength that sees through the zone.Laser beam 3 usefulness light-gathering optics 2 optically focused of the 1st wavelength become pack light beam 5, at the surface element formation focal point 7 of semiconductor wafer 1.Laser beam 4 usefulness light-gathering optics 2 optically focused of the 2nd wavelength become pack light beam 6, form focal point 8 in the inside of semiconductor wafer 1.In this embodiment, the laser beam of 2 kinds of wavelength of irradiation, but in order to make the process velocity high speed, for example, also can adopt to have to be positioned at the laser beam of wavelength more than 2 kinds or 2 kinds that sees through the zone, irradiation has the laser beam of wavelength more than 3 kinds or 3 kinds altogether to semiconductor wafer.
Basic wave with laser generation is the wavelength conversion that nonlinear optical crystal is implemented to have used in the basis, generates the laser beam with 2 kinds of wavelength.Here, if be example,, use the wavelength that is positioned at the visible light zone wavelength as 400nm～1.1 mum wavelength zones then as the 1st wavelength that is positioned at the absorption region with the silicon wafer.As being positioned at the 2nd wavelength that sees through the zone, use the wavelength in 1.3 μ m～1.7 mum wavelength zones.Especially, preferably use absorbability roughly to become the wavelength of maximum 780nm as the 1st wavelength, the while is preferably used the wavelength of the 1560nm that becomes 2 times of the 1st wavelength as the 2nd wavelength.
When using the 2 pairs of above-mentioned laser beams that have 2 kinds of wavelength like that of light-gathering optics that provide as for example convex lens etc. to carry out optically focused, because chromatic aberation, the laser beam of each wavelength has focal point at the diverse location along optical axis direction.As shown in Figure 1, the laser beam that makes the 1st wavelength that is positioned at the absorption region makes the laser beam that is positioned at the 2nd wavelength that sees through the zone at the inside of semiconductor wafer optically focused when the surface element optically focused of semiconductor wafer.Surface element at the semiconductor wafer of the laser beam condensation of the 1st wavelength mainly by the linear absorption of laser beam, forms near surface machining area 9.If the luminous energy that is absorbed was the short-pulse laser that finishes in the burst length before becoming heat, then at this near surface machining area 9, semiconductor wafer does not melt, and can form ditch, or forms the modification area that material is formed sex change.
In the inside of the semiconductor wafer of the laser beam condensation of the 2nd wavelength, mainly the multi-photon by laser beam absorbs, and makes material form sex change, forms modification area 10.When the position of laser beam condensation compression stress was had an effect, tensile stress acted on its neighboring area, so will produce residual stress near surface machining area 9 and neighboring area thereof and modification area 10 and neighboring area thereof.Be radiated at the laser beam on the semiconductor wafer owing to used short-pulse laser, thus the pulse width of the 2nd wavelength laser bundle that produces the multi-photon absorption can be controlled, and set higher power optically focused density for.Because light-gathering optics 2 is moved along the direction perpendicular to semiconductor wafer 1 surface, focal point 7 and 8 is moved downwards, thereby can process near surface machining area 9 and modification area 10 in the mode that vertically prolongs.And, as the structure of the ratio of the energy of energy that can at random change the 1st wavelength laser bundle and the 2nd wavelength laser bundle, be very suitable, therefore, can set the optimal process condition of the plate body material that is adapted to processing object.
As noted above, owing to form perforated portion or modification area by the linear absorption of semiconductor wafer surface portion and inner multi-photon absorption, so form the residual stress generation area in the face direction of extending perpendicular to the direction of semiconductor wafer surface along the road.After the laser beam flying along the road finishes, when enforcement applies the cut-out operation of the mechanical impact force that causes owing to bending to semiconductor wafer, with near surface machining area 9 is starting point, crackle is propagated to being formed at inner residual stress generation area, thus can be along the road dividing semiconductor wafer easily.At this moment, when only the existing method of cutting apart behind the formation processing ditch is compared, owing to can set the power optically focused density of the laser beam that is radiated near surface machining area 9 than the lowland, so width reduces the generating capacity of fragment greatly, simultaneously the working width of near surface machining area 9 is narrowed down.In the thin situation of semiconductor wafer, do not apply mechanical impact force, the method for promptly available only scanning laser beam is come dividing semiconductor wafer.
Under the less situation of the thickness of plate body, near the back side of plate body, form the focal point of the 2nd wavelength laser bundle, and near the back side of machining plate-like body, this can implement according to the present invention.In addition, even generate the laser beam of employed 2 kinds of wavelength, also there is the different situation of optical length separately according to the laser beam of identical basic wave.Under these circumstances, can adopt formation as described below, that is: make the optical length shortening of optical length semiconductor wafer, that be positioned at the 2nd wavelength laser bundle that sees through the zone than the 1st wavelength laser bundle that is positioned at the absorption region, the laser beam of the 2nd wavelength arrives earlier in time.At this moment, can not harm the processing of surface element, the laser beam incident that makes the 2nd wavelength is to inner.
Fig. 2 is the figure of the laser beam generating device configuration example used in the cutting-off method of expression the present application.Pattern synchronization fibre laser oscillator 21 output ultrashort pulse oscillation lights 22.Optical fiber 23 is owing to the ultrashort pulse oscillation light 22 to input carries out the pulse width broadening that the wavelength dispersion effect causes, thus the amplification pulse width, the pulse laser beam 24 of length of output peak value output decline.
Then, laser beam 24 is incided used amplification medium, promptly for example added the regenerative amplifier 25 of the sapphire crystal of Ti, obtain making the laser beam output 26 after pulse energy has been carried out the broadband amplification with broadband gain.This regenerative amplifier 25 utilize the laser output of the 2nd higher hamonic wave wavelength conversion that obtains Nd:YAG laser such, for example SHG-Nd:YAG laser device 27, and carry out light stimulus.
Use the laser beam 26 after 28 inputs of the right well-known pulse shortener of diffraction grating are amplified, implemented pulse compression.Therefore, pulse width is compressed to and approaches the preceding pulse width of broadening, turns back to short pulse again.That is, be reproduced the laser beam of the long pulse after amplifier 25 pulse stretchings, owing to compress the pulse energy of amplifying in time with the long pulse state, thus become short pulse beam of light 29 with peak value output valve.
Then, the short pulse beam of light 29 with this peak value output valve is incided have the optical parameter amplifier 30 that optical parameter amplifies the nonlinear optical crystal of usefulness, thereby nonlinear optical crystal is carried out light stimulus.Therefore, take out by amplifying the flashlight frequency content ω s of wavelength and the laser beam that comprises 2 kinds of frequencies at least that invalid light frequency composition ω i constitutes from nonlinear optical crystal, and carry out wavelength conversion as optical parameter.Optical parameter is well-known technology on principle, establishes when encouraging light frequency to be ω, satisfies the relation of ω=ω s+ ω i between flashlight frequencies omega s that obtains in the vibration output of amplifying as optical parameter and the invalid light frequency composition ω i and sets up.When ω s=ω i, the pulse of 2 times of wavelength that obtain decaying output.The principle that optical parameter amplifier 30 amplifies according to optical parameter, output have the laser beam 31 of the 1st wavelength and have the laser beam 32 of the 2nd wavelength.The laser beam of the laser beam of the 1st wavelength of Sheng Chenging and the 2nd wavelength like this, the light-gathering optics 2 by as shown in Figure 1 shines semiconductor wafer 1, and respectively at the surface element and the inner focal point that forms of semiconductor wafer 1.
Embodiment 2
Fig. 3 is the figure of other configuration examples of employed laser beam generating device in the cutting-off method of expression the present application.With beam splitter 43 the laser generation basic wave light beam 42 of the short pulse of exporting from well-known femtosecond laser oscillator 41 is divided into 2 laser beams 44,45.White light generator 47 input laser beams 44, the coherent light 48 of output device adularescent spectrum.This coherent light 48 is reflected by reflective mirror 49 and dichronic mirror 50, and incides optical parameter amplifier 51 as seed light.Laser beam 45 with basic wave frequency incides optical parameter amplifier 51 by dichronic mirror 50.Optical parameter amplifier 51 is directed in the flashlight that is comprised in this intracrystalline seed light light beam 48, selectively the composition of the composition of amplification frequency ω s and ω i at the same time with the power drive nonlinear optical crystal of basic wave frequency.Therefore, laser beam 52 that the laser beam with basic wave frequencies omega is transformed into have frequencies omega s and laser beam 53 with frequencies omega i.The laser beam of the laser beam of the 1st wavelength of Sheng Chenging and the 2nd wavelength like this, the light-gathering optics 2 by as shown in Figure 1 shines semiconductor wafer 1, and respectively at the surface element and the inner focal point that forms of semiconductor wafer 1.
Under the extremely narrow situation of pulse width, because light path 44-48 is different with the optical length of light path 45, so tend to the situation that pulsing can not arrive optical parameter amplifier 51 simultaneously.At this moment, can adopt following structure: prolong light path 45 aptly, make its optical path length consistent, and make seed light 48 and exciting light 45 be present in the same space in time with light path 44-48.
As suitable example of the present invention, be not limited to the cut-out of silicon wafer, can be widely used in the laser accurate processing of semiconductor chip.Owing to use the present invention, can improve the productivity ratio that electronic component is made, and can reduce processing and remove thing, thereby can improve the yield rate of goods.
Claims (12)
1. the cutting-off method of a plate body is characterized in that,
Shine on the plate body after making the short pulse laser beam optically focused that comprises wavelength more than 2 kinds or 2 kinds, form the focal point of laser beam at the surface element of this plate body, simultaneously form one or more focal points, laser beam is scanned, cut off plate body thus along cutting direction in the inside of this plate body.
2. the cutting-off method of a plate body is characterized in that,
Shine on the plate body after making the laser beam condensation that comprises the short pulse of wavelength more than 2 kinds or 2 kinds, form the focal point of laser beam at the surface element of this plate body, simultaneously form one or more focal points in the inside of this plate body, after along cutting direction laser beam being scanned, apply mechanical external force, thereby cut off plate body along the machining locus of laser beam.
3. as the cutting-off method of the plate body of claim 1 or claim 2 record, it is characterized in that,
Shine a wavelength that comprises in the laser beam of plate body and be by this plate body and mainly carry out wavelength under the absorption region of linear absorption,
Shine other wavelength that comprised in the laser beam of this plate body and be by this plate body and mainly carry out wavelength under the absorption region that multi-photon absorbs.
4. as the cutting-off method of the plate body of claim 1 or claim 2 record, it is characterized in that,
Shining a wavelength that comprises in the laser beam of plate body is 780nm,
Shining other wavelength that comprised in the laser beam of this plate body is the wavelength that belong to 1.3 μ m～1.7 mum wavelength zones.
5. as the cutting-off method of the plate body of claim 1 or claim 2 record, it is characterized in that,
Can change arbitrarily have by plate body mainly carry out the wavelength under the absorption region of linear absorption laser beam energy and have the ratio of the energy separately of one or more laser beams that see through the wavelength under the zone that carry out mainly by plate body that multi-photon absorbs.
6. as the cutting-off method of the plate body of claim 1 or claim 2 record, it is characterized in that,
Make and have the laser beam pulses of mainly carrying out the wavelength under the absorption region of linear absorption by plate body, also postpone preset time than having one or more laser beam pulses that see through the wavelength under the zone of carrying out mainly by plate body that multi-photon absorbs, and be radiated on this plate body.
7. a laser beam generating device is characterized in that,
Have LASER Light Source and light-gathering optics, the output of this LASER Light Source has plate body by processing object mainly to be carried out the short pulse laser beam of the wavelength under the absorption region of linear absorption and has the short pulse laser beam that sees through one or more wavelength under the zone of carrying out mainly by this plate body that multi-photon absorbs, and above-mentioned short pulse laser beam has identical optical axis; This light-gathering optics makes the laser beam condensation of wavelength more than 2 kinds or 2 kinds that comprises from the irradiation of this LASER Light Source.
8. as the laser beam generating device of claim 7 record, it is characterized in that,
The wavelength that belongs to the absorption region is 780nm, and belonging to the wavelength that sees through the zone is the wavelength that belongs to 1.3 μ m～1.7 mum wavelength zones.
9. as the laser beam generating device of claim 7 record, it is characterized in that,
Light-gathering optics can be moved along the optical axis direction of laser beam.
10. as the laser beam generating device of claim 7 record, it is characterized in that,
The energy and having that can at random change the laser beam with the wavelength under the absorption region of mainly carrying out linear absorption carries out mainly that multi-photon absorbs sees through the ratio of energy separately of one or more laser beams of the wavelength under the zone.
11. the laser beam generating device as claim 7 record is characterized in that,
Make the pulse of laser beam, only postpone to export behind the preset time than pulse with main one or more laser beams that see through the wavelength under the zone that carry out that multi-photon absorbs with the wavelength under the absorption region of mainly carrying out linear absorption.
12. the laser beam generating device as claim 7 record is characterized in that,
As the wavelength that belongs to the absorption region, use the basic wave oscillation wavelength of the sapphire laser that has added Ti.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005129396A JP4838531B2 (en) | 2005-04-27 | 2005-04-27 | Plate cutting method and laser processing apparatus |
| JP2005129396 | 2005-04-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1853840A CN1853840A (en) | 2006-11-01 |
| CN100553853C true CN100553853C (en) | 2009-10-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100886357A Expired - Fee Related CN100553853C (en) | 2005-04-27 | 2006-04-27 | Plate cutting method and laser processing device |
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| Country | Link |
|---|---|
| JP (1) | JP4838531B2 (en) |
| KR (1) | KR101325200B1 (en) |
| CN (1) | CN100553853C (en) |
| TW (1) | TWI387503B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2006305586A (en) | 2006-11-09 |
| CN1853840A (en) | 2006-11-01 |
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