CN100547817C - 导电的非极化的复合氮化镓基衬底及生产方法 - Google Patents
导电的非极化的复合氮化镓基衬底及生产方法 Download PDFInfo
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- CN100547817C CN100547817C CNB2006100675233A CN200610067523A CN100547817C CN 100547817 C CN100547817 C CN 100547817C CN B2006100675233 A CNB2006100675233 A CN B2006100675233A CN 200610067523 A CN200610067523 A CN 200610067523A CN 100547817 C CN100547817 C CN 100547817C
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- conduction
- gallium nitride
- layer
- polarised
- epitaxial layer
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNB2006100675233A CN100547817C (zh) | 2006-02-26 | 2006-02-26 | 导电的非极化的复合氮化镓基衬底及生产方法 |
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CNB2006100675233A CN100547817C (zh) | 2006-02-26 | 2006-02-26 | 导电的非极化的复合氮化镓基衬底及生产方法 |
Publications (2)
Publication Number | Publication Date |
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CN1845350A CN1845350A (zh) | 2006-10-11 |
CN100547817C true CN100547817C (zh) | 2009-10-07 |
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CNB2006100675233A Expired - Fee Related CN100547817C (zh) | 2006-02-26 | 2006-02-26 | 导电的非极化的复合氮化镓基衬底及生产方法 |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102146585A (zh) * | 2011-01-04 | 2011-08-10 | 武汉华炬光电有限公司 | 非极性面GaN外延片及其制备方法 |
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CN1845350A (zh) | 2006-10-11 |
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