CN100540730C - A kind of preparation method of carbon silicon nitride film - Google Patents
A kind of preparation method of carbon silicon nitride film Download PDFInfo
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- CN100540730C CN100540730C CNB2008100612337A CN200810061233A CN100540730C CN 100540730 C CN100540730 C CN 100540730C CN B2008100612337 A CNB2008100612337 A CN B2008100612337A CN 200810061233 A CN200810061233 A CN 200810061233A CN 100540730 C CN100540730 C CN 100540730C
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CNB2008100612337A CN100540730C (en) | 2008-03-18 | 2008-03-18 | A kind of preparation method of carbon silicon nitride film |
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CNB2008100612337A CN100540730C (en) | 2008-03-18 | 2008-03-18 | A kind of preparation method of carbon silicon nitride film |
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CN101245444A CN101245444A (en) | 2008-08-20 |
CN100540730C true CN100540730C (en) | 2009-09-16 |
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CNB2008100612337A Expired - Fee Related CN100540730C (en) | 2008-03-18 | 2008-03-18 | A kind of preparation method of carbon silicon nitride film |
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Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101774593A (en) * | 2009-01-14 | 2010-07-14 | 西南科技大学 | Ordered porous silica and silicon carbonitride and preparation method and application thereof |
JP5224470B2 (en) * | 2009-07-31 | 2013-07-03 | 国立大学法人東北大学 | Photoelectric conversion member |
JP5540431B2 (en) * | 2010-07-30 | 2014-07-02 | 国立大学法人東北大学 | Photoelectric conversion member |
CN103880433A (en) * | 2012-12-19 | 2014-06-25 | 沈阳鑫劲粉体工程有限责任公司 | Method for synthesizing silicon nitride powder through plasma gas phase reaction, and method for synthesizing silicon nitride composite powder through plasma gas phase reaction |
CN108461386B (en) * | 2018-03-16 | 2020-02-11 | 三峡大学 | Silicon quantum dot-containing multilayer film and preparation method thereof |
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2008
- 2008-03-18 CN CNB2008100612337A patent/CN100540730C/en not_active Expired - Fee Related
Non-Patent Citations (2)
Title |
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PECVD沉积氮化硅薄膜性质研究. 王晓泉.太阳能学报,第25卷第3期. 2004 |
PECVD沉积氮化硅薄膜性质研究. 王晓泉.太阳能学报,第25卷第3期. 2004 * |
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C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Zhejiang Jinko Energy Co.,Ltd. Assignor: Zhejiang Sci-Tech University Contract fulfillment period: 2009.10.16 to 2014.12.15 contract change Contract record no.: 2009330002543 Denomination of invention: Method for manufacturing carbon silicon nitride film Granted publication date: 20090916 License type: Exclusive license Record date: 20091019 |
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LIC | Patent licence contract for exploitation submitted for record |
Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2009.10.16 TO 2014.12.15; CHANGE OF CONTRACT Name of requester: ZHEJIANG JINGKE ENERGY CO., LTD. Effective date: 20091019 |
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C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090916 Termination date: 20110318 |