CN100530954C - 具有改进的温度补偿的压电晶体谐振器及其制造方法 - Google Patents
具有改进的温度补偿的压电晶体谐振器及其制造方法 Download PDFInfo
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- CN100530954C CN100530954C CNB2005101047415A CN200510104741A CN100530954C CN 100530954 C CN100530954 C CN 100530954C CN B2005101047415 A CNB2005101047415 A CN B2005101047415A CN 200510104741 A CN200510104741 A CN 200510104741A CN 100530954 C CN100530954 C CN 100530954C
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- piezoelectric
- compensation
- electrode
- acoustics
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Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0407—Temperature coefficient
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49128—Assembling formed circuit to base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004062312.0 | 2004-12-23 | ||
DE102004062312A DE102004062312B3 (de) | 2004-12-23 | 2004-12-23 | Piezoelektrischer Resonator mit verbesserter Temperaturkompensation und Verfahren zum Herstellen desselben |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1801613A CN1801613A (zh) | 2006-07-12 |
CN100530954C true CN100530954C (zh) | 2009-08-19 |
Family
ID=36371661
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005101047415A Expired - Fee Related CN100530954C (zh) | 2004-12-23 | 2005-12-23 | 具有改进的温度补偿的压电晶体谐振器及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7486006B2 (zh) |
CN (1) | CN100530954C (zh) |
DE (1) | DE102004062312B3 (zh) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1821351B1 (de) * | 2006-02-16 | 2008-04-16 | Delphi Technologies, Inc. | Verfahren zum Herstellen eines piezoelektrischen Bauteils |
DE102006046278B4 (de) * | 2006-09-29 | 2010-04-08 | Epcos Ag | Mit akustischen Volumenwellen arbeitender Resonator |
WO2010077313A1 (en) | 2008-12-17 | 2010-07-08 | Sand9, Inc. | Mechanical resonating structures including a temperature compensation structure |
US8689426B2 (en) | 2008-12-17 | 2014-04-08 | Sand 9, Inc. | Method of manufacturing a resonating structure |
US9735338B2 (en) | 2009-01-26 | 2017-08-15 | Cymatics Laboratories Corp. | Protected resonator |
US8030823B2 (en) * | 2009-01-26 | 2011-10-04 | Resonance Semiconductor Corporation | Protected resonator |
US8253513B2 (en) * | 2010-03-16 | 2012-08-28 | Hao Zhang | Temperature compensated thin film acoustic wave resonator |
EP2403139A1 (en) * | 2010-07-02 | 2012-01-04 | Nxp B.V. | Resonator |
FR2977947B1 (fr) * | 2011-07-11 | 2013-07-05 | Photomeca France | Exposeuse uv pour plaques d'impression |
KR101853740B1 (ko) * | 2011-07-27 | 2018-06-14 | 삼성전자주식회사 | 체적 음향 공진기 및 체적 음향 공진기를 이용한 듀플렉서 |
US9229028B2 (en) | 2011-09-08 | 2016-01-05 | The Regents Of The University Of California | Sensor for low force-noise detection in liquids |
US9270254B2 (en) * | 2011-09-30 | 2016-02-23 | Qualcomm Mems Technologies, Inc. | Cross-sectional dilation mode resonators and resonator-based ladder filters |
CN102904546B (zh) * | 2012-08-30 | 2016-04-13 | 中兴通讯股份有限公司 | 一种温度补偿能力可调节的压电声波谐振器 |
US20140117815A1 (en) * | 2012-10-26 | 2014-05-01 | Avago Technologies General Ip (Singapore) Pte. Ltd | Temperature compensated resonator device having low trim sensitivy and method of fabricating the same |
CN104167955A (zh) * | 2013-05-16 | 2014-11-26 | 香港理工大学 | 压电元件和压电能量收集*** |
US9219517B2 (en) | 2013-10-02 | 2015-12-22 | Triquint Semiconductor, Inc. | Temperature compensated bulk acoustic wave devices using over-moded acoustic reflector layers |
US10800649B2 (en) | 2016-11-28 | 2020-10-13 | Analog Devices International Unlimited Company | Planar processing of suspended microelectromechanical systems (MEMS) devices |
CN106595829A (zh) * | 2016-12-22 | 2017-04-26 | 东南大学 | 具有温度补偿功能的车辆动态称重传感器及其制备方法 |
US10843920B2 (en) | 2019-03-08 | 2020-11-24 | Analog Devices International Unlimited Company | Suspended microelectromechanical system (MEMS) devices |
JP2020182035A (ja) * | 2019-04-23 | 2020-11-05 | 株式会社ディスコ | Sawフィルタの製造方法及びsawフィルタ |
CN111006801B (zh) * | 2019-12-17 | 2021-02-09 | 华中科技大学 | 用于生理信息监测的柔性变模态传感器、应用及制备方法 |
CN112054777A (zh) * | 2020-05-09 | 2020-12-08 | 诺思(天津)微***有限责任公司 | 体声波谐振器组件及制造方法、滤波器及电子设备 |
CN112953447B (zh) * | 2021-02-09 | 2023-08-11 | 偲百创(深圳)科技有限公司 | 谐振器及电子设备 |
CN113285687B (zh) * | 2021-03-05 | 2023-02-03 | 天津大学 | 温度补偿型薄膜体声波谐振器及其形成方法、电子设备 |
CN113328724A (zh) * | 2021-07-22 | 2021-08-31 | 绍兴汉天下微电子有限公司 | 一种体声波谐振器及其制作方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS58137317A (ja) * | 1982-02-09 | 1983-08-15 | Nec Corp | 圧電薄膜複合振動子 |
JPH01126939A (ja) | 1987-11-12 | 1989-05-19 | Sanyo Electric Co Ltd | 電気掃除機 |
US5838089A (en) * | 1997-02-18 | 1998-11-17 | Kobe Steel Usa Inc. | Acoustic wave devices on diamond with an interlayer |
JP3880150B2 (ja) * | 1997-06-02 | 2007-02-14 | 松下電器産業株式会社 | 弾性表面波素子 |
JPH1126939A (ja) | 1997-07-07 | 1999-01-29 | Kyocera Corp | 多層配線基板 |
CN1072243C (zh) | 1998-01-14 | 2001-10-03 | 中山大学 | 用改性的导电填料制造正温度系数型导电高分子复合材料 |
US6420820B1 (en) * | 2000-08-31 | 2002-07-16 | Agilent Technologies, Inc. | Acoustic wave resonator and method of operating the same to maintain resonance when subjected to temperature variations |
DE10045090A1 (de) * | 2000-09-12 | 2002-03-28 | Infineon Technologies Ag | Akustischer Resonator |
US20030079877A1 (en) * | 2001-04-24 | 2003-05-01 | Wellington Scott Lee | In situ thermal processing of a relatively impermeable formation in a reducing environment |
CN100397611C (zh) | 2002-10-09 | 2008-06-25 | 旺宏电子股份有限公司 | 于低介电材料层中形成导电结构的方法 |
JP3889351B2 (ja) * | 2002-12-11 | 2007-03-07 | Tdk株式会社 | デュプレクサ |
JP2005117641A (ja) * | 2003-09-17 | 2005-04-28 | Matsushita Electric Ind Co Ltd | 圧電体共振器、それを用いたフィルタ及び共用器 |
US7391285B2 (en) * | 2003-10-30 | 2008-06-24 | Avago Technologies Wireless Ip Pte Ltd | Film acoustically-coupled transformer |
US7561009B2 (en) * | 2005-11-30 | 2009-07-14 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Film bulk acoustic resonator (FBAR) devices with temperature compensation |
-
2004
- 2004-12-23 DE DE102004062312A patent/DE102004062312B3/de not_active Expired - Fee Related
-
2005
- 2005-12-23 US US11/318,342 patent/US7486006B2/en not_active Expired - Fee Related
- 2005-12-23 CN CNB2005101047415A patent/CN100530954C/zh not_active Expired - Fee Related
-
2008
- 2008-12-29 US US12/344,829 patent/US8186028B2/en not_active Expired - Fee Related
Non-Patent Citations (2)
Title |
---|
Co对重掺Sm的FeSi_2基热电材料电学性能的影响. 李伟文等.中国有色金属学报,第12卷第1期. 2002 |
Co对重掺Sm的FeSi_2基热电材料电学性能的影响. 李伟文等.中国有色金属学报,第12卷第1期. 2002 * |
Also Published As
Publication number | Publication date |
---|---|
CN1801613A (zh) | 2006-07-12 |
US8186028B2 (en) | 2012-05-29 |
US7486006B2 (en) | 2009-02-03 |
US20060279175A1 (en) | 2006-12-14 |
US20090100657A1 (en) | 2009-04-23 |
DE102004062312B3 (de) | 2006-06-01 |
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C06 | Publication | ||
PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20081205 Address after: Singapore Singapore Applicant after: Avago Technologies Wireless IP Address before: Munich, Germany Applicant before: Infennian Technologies AG |
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ASS | Succession or assignment of patent right |
Owner name: AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE)PRIVATE Free format text: FORMER OWNER: INFINEON TECHNOLOGIES AG Effective date: 20081205 |
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C14 | Grant of patent or utility model | ||
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ASS | Succession or assignment of patent right |
Owner name: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) CORPORAT Free format text: FORMER OWNER: AVAGO TECHNOLOGIES WIRELESS IP Effective date: 20130507 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20130507 Address after: Singapore Singapore Patentee after: Avago Technologies Fiber IP Singapore Pte. Ltd. Address before: Singapore Singapore Patentee before: Avago Technologies Wireless IP |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090819 Termination date: 20131223 |