CN100530578C - Production of long-lead, low-arc and high-density golden-wire ball welding - Google Patents
Production of long-lead, low-arc and high-density golden-wire ball welding Download PDFInfo
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- CN100530578C CN100530578C CNB2005100227270A CN200510022727A CN100530578C CN 100530578 C CN100530578 C CN 100530578C CN B2005100227270 A CNB2005100227270 A CN B2005100227270A CN 200510022727 A CN200510022727 A CN 200510022727A CN 100530578 C CN100530578 C CN 100530578C
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- Wire Processing (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
The invention is concerned with a integrate circuit to encapsulate golden wire ball soldering with long down-lead, low radian and high consistency. The step relates to preparing material, selecting equipment, control production technology about firing golden wire ball, connecting on the CMOS chip weld field, forming arc and connecting the down-lead frame, selecting and checking semi-manufactured goods. The ultra-large-scale and super-thin integrate circuit is suitable for computer, communication equipment and top grade household appliances and overcomes the short of encapsulation requirement about ultra-large-scale and super-thin integrate circuit with short down-lead, high radian and low consistency. The establishment with the production made by this way owns small volume, small weight and saving energy sources with more steady and credible performance. It is fit for large-scale production with low cost and high efficiency.
Description
Technical field
The present invention relates to integrated circuit encapsulation field gold ball bonding technology, is a kind of production of long-lead, low-arc and high-density golden-wire ball welding specifically.
Background technology
In order to adapt to the production of large scale integrated circuit, develop the long-lead, low-arc and high-density golden-wire ball welding production technology.DIP (Dual-In-Line Pakage) the dual-in-line form encapsulation of common processes production at present, most middle small scale integrated circuits (IC) all adopt this packing forms.Its number of pins generally is no more than 100, and spacing 2.54mm between the pin, plastic-sealed body thickness are suitable for PCB (printed circuit board (PCB)) and go up piercing welding more than 3.5mm.Its characteristics, easy to operate, but the bigger (DIP42L: 13.8*52.25/3*3=80: 1), be far longer than 1, so volume is also big of package area and chip area.
The little external form encapsulation of SOP (Small Outline Pakage) little outline packages and SSOP (Shrunk Outline Pakage) scaled-down version, be suitable for most middle small scale integrated circuits, adopt this two kinds of packing forms, must use SMD (mounted on surface equipment and technology), number of pins is in 100.The SOP encapsulation, spacing 1.27mm between the pin, spacing is 0.635mm, 0.65mm, 0.8mm, 1.0mm between the SSOP packaging pin, two kinds of package thickness are all within 2.0mm.Its characteristics are applicable to SMD sufacing installation wiring on the PCB circuit board, the smaller (SSOP28: 10.2*5.3/2*2=13: 1), be far longer than 1, so volume is also big, but more much smaller than DIP of package area and chip area.
The art of this patent is LQFP (Low Pprofile Quad Fflat Pakage) plastic flat four limit lead packages, number of pins is more than 100, pin-pitch (0.50,0.40), thickness 1.40mm, volume is little, in light weight, the density height, thin thickness, the ratio (LQFP128L: 14*14/7*7=4: 1) of chip area and package area, compare much smallerly with DIP, SOP, SSOP, we can say that relative volume is little.General extensive or very lagre scale integrated circuit (VLSIC) adopts this packing forms.Its characteristics are applicable to SMD surface mounting technology installation wiring on the PCB circuit board, and product is applicable to high frequency, and is easy to operate, the reliability height, and the ratio between package area and the chip area is little, and the packaging technology difficulty is big, especially pressure welding (gold ball bonding), plastic packaging.
Summary of the invention
In order to adapt to ultra-large thin type integrated circuit encapsulation production more than 100 lines, satisfy integrated circuit to little, thin, light, highdensity development need, invent this production of long-lead, low-arc and high-density golden-wire ball welding, solved problems such as the lead-in wire that exists in the existing integrated circuit encapsulation is short, radian is high, density is low, thickness is high, volume is big.
The invention provides a kind of long lead, low radian, high density, integrated circuit encapsulation gold ball bonding production method, concrete steps are as follows:
A) material is prepared
A-1) spun gold: Au＞99.99% Fracture Force (T/S) 〉=10gf elongation (E/L) 2～18%;
A-2) lead frame: the slim lead frame of matrix form
A-3) wiring chopper: H=35～40 μ m, CD=50～65 μ m, TIP=118～135 μ m, OR=6～10 °, FA=7～11 °;
B) choice of equipment
ASM AB339 Eagle bonding equipment
C) production Technology control
C-1) gold goal is fired
1. EFO electronic striking bar is regulated 3500V～4200V, and guarantee the smooth cleaning of sparking platinum head, gold thread grounded circuit closure;
2. regulating the sparking magnitude of current is 2700mA～3200mA, makes gold goal hardness meet the wiring requirement;
3. regulating the discharge time of striking sparks is 670 μ s～720 μ s, and the gold goal head is melted, and is 40 μ m ± 1 μ m surface slick and sly flawless gold goal---FAB to obtain diameter;
C-2) chip welding zone wiring
1. with sticking chip on the frame carrier and before the semi-finished product material loading that is equipped with that is cured fold up on the gold ball bonding machine worktable, gold wire bonder will be gone up the lead frame of core automatically and send track to, through aiming at automatically and utilizing conduction pattern to be heated to 200 ± 2 ℃;
2. the wiring chopper is aimed at chip welding spot, guarantee that chopper central point and welding zone central point side-play amount can not exceed 0.5mm;
3. the time that adds on the butted line chopper is ultrasonic wave and the pressure of 10ms ± 3ms.Ultrasonic frequency is 120KHZ ± 10KHZ, and the way of output is an electric current, and power is 40mw ± 2mw; Pressure is output as 30gf ± 2gf.
4. gold goal and chip welding zone contact point produce 1900 ℃～2200 ℃ temperature under above-mentioned heating-up temperature ultrasonic wave and pressure acting in conjunction, cause gold goal and chip welding spot to realize congruent melting, thereby reach shearing force 〉=25gf, make it have the good ohmic contact;
C-3) bank is shaped
1. by the wiring chopper spun gold is vertically moved to apart from chip surface 0.07 ± 0.001mm and highly located bending, be higher than 0.02mm apart from chip height during this period, gold thread thermal stress district does not have distortion, to prevent that the gold goal neck is impaired or to shorten;
2. after the bending, according to span value between the corresponding with it lead frame of chip welding zone, draw the respective length gold thread, general unwrapping wire length is controlled at 3mm～7mm, and ERROR CONTROL is in ± 0.001mm;
3. move and emitted gold thread pin to the lead frame, guarantee gold thread maximum offset＜1% in moving process.
C-4) lead frame wiring
1. the lead frame of having gone up core is after utilizing conduction pattern to be heated to 200 ± 2 ℃ on the gold wire bonder;
2. the wiring chopper is moved to pin in the lead frame, and guarantee that wiring chopper center overlaps with interior pin width center, side-play amount does not exceed 1 μ m;
3. the butted line chopper adds that the time is ultrasonic wave and the pressure of 10ms ± 3ms, and ultrasonic frequency is 120KHZ ± 10KHZ, and the way of output is an electric current, and power is 80mw ± 3mw, and pressure is output as 160gf ± 6gf;
4. under above-mentioned heating-up temperature, ultrasonic wave and pressure effect, pin is in contact with one another the generation plastic deformation in gold thread and the lead frame, thereby reaches mutual wedging, forms the good ohmic contact, its pull-off force 〉=5gf;
5. go between to the list on the interior pin according to 1.～4. pressing all chips;
6. on same chip bonding on the carrier of same lead frame, connect the gold thread more than 2 in DIP, SOP and the SSOP on the pin;
D) semi-finished product sampling Detection
1. gold goal shearing force: to all have welded successful gold goal and do destructive test in the sampling product, require all gold goal shearing forces all to want 〉=25gf cpk 〉=1.68 with precision gold goal shearing force;
2. gold thread pull-off force: to all have welded successful gold thread and do destructive testing in the sampling product, require all gold thread pull-off forces all will reach 〉=5gf cpk value 〉=1.68 with high accuracy gold thread pull-off force test machine;
3. gold thread maximum offset: with high magnification high-acruracy survey microscope gold thread in the sampling product is done the gold thread peak excursion and measure, require maximum offset＜1%;
4. gold goal consistency: to gold thread coherence measurement in the sampling product, finally measure numerical value cpk 〉=1.68 with high magnification high-acruracy survey microscope.
5. after the X-Ray fluoroscopic machine is had an X-rayed, gold thread is out of shape situation behind the inspection plastic packaging, and gold thread deformation rate＜5% does not bump silk, open circuit phenomenon;
E) use continuously above-mentioned a), b), c) step, and the detection by step d) manufactures the LQFP100L semi-finished product that ultra-large thin set becomes the required long leads, low radian high-density packages of circuit.
The ultra-large ultrathin integrated circuit that adopts above-mentioned technology to make can be widely used in computer, communication apparatus, high-grade household electrical appliances etc.The product that utilizes this technology to make uses at above-mentioned facility, make it have characteristics such as volume is little, in light weight, energy savings, and performance is more reliable and more stable than traditional handicraft, and consistency is higher, is fit to large-scale production processing.
The invention has the advantages that:
1, semi-finished product, its performance meet GB/T1275 and make ultra-large ultrathin integrated circuit 0-II and JEDEC corresponding standard with the long-lead, low-arc and high-density golden-wire ball welding technology.
2, broken through short, high, the low density gold ball bonding technology of radian of conventional package form lead-in wire, the ultra-large ultrathin integrated circuit package requirements of incompatibility, and by the JESD22-A113C detection, thereby guarantee constant product quality.
3, adopt long leads, low radian high density technology on the matrix frame, realized low-cost high-efficiency, be more suitable for mass production conditions.
Embodiment
Technological process of the present invention is:
Material loading → preheating → aligning → establishment wired program → survey height → burning ball pressure testing → head inspection lead strain, gold goal shearing force → formal pressure welding → bank pressure welding → discharging
According to concrete manufacturing equipment, need the concrete encapsulating products specification of manufacturing, provide embodiment as follows:
Example 1.LQFP100L
One, material is prepared
1, spun gold: Au＞99.99% Fracture Force (T/S) 〉=10gf elongation (E/L) 2%;
2, lead frame: the slim lead frame of matrix form: ASM 276 * 276;
3, wiring chopper: H=35～40 μ m CD=50～65 μ m TIP=118～135 μ m OR=6～10 A=7 °～11 °
Two, choice of equipment
ASM AB339 Eagle bonding equipment
Three, production Technology control
1. gold goal is fired
A) EFO electronic striking bar is adjusted to 3500V, and guarantees the smooth cleaning of sparking platinum head, gold thread grounded circuit closure;
B) regulating the sparking magnitude of current is 2700mA, makes gold goal hardness meet the wiring requirement;
C) regulating the discharge time of striking sparks is 670 μ s, is 39 μ m ± slick and sly flawless gold goal in 1 μ m surface to obtain diameter.
2. chip welding zone wiring
A) will go up the core lead framework utilizes conduction pattern to be heated to 200 ± 2 ℃ on gold wire bonder;
B) the wiring chopper is aimed at chip welding spot, guarantee that chopper central point and welding zone central point side-play amount can not exceed 0.5mm;
C) add on the butted line chopper that the time is ultrasonic waves and the pressure of 7ms.The ultrasonic waves frequency is 110KHZ, and the way of output is an electric current, and power is 40mw ± 2mw.Pressure is output as 28gf.
D) under above-mentioned heating-up temperature ultrasonic waves and pressure acting in conjunction, gold goal and chip welding zone contact point produce about temperature more than 1900 ℃, cause gold goal and chip welding spot to realize congruent melting, make it have the good ohmic contact, thereby reach shearing force 〉=25gf.
3. bank is shaped
A) by the wiring chopper spun gold is vertically moved to apart from chip surface 0.07 ± 0.001mm and highly located bending, guarantee during this period that below chip height 0.02mm gold thread thermal stress district does not have distortion, to prevent that the gold goal neck is impaired or to shorten;
B) after the bending,, draw the respective length gold thread according to span value between the corresponding with it lead frame of chip welding zone, its unwrapping wire error in length should be controlled at ± 0.001mm in;
C) move and to have emitted gold thread pin to the lead frame, guarantee gold thread maximum offset＜5% in moving process.
4. lead frame wiring
A) on gold wire bonder, utilize conduction pattern to be heated to 200 ± 2 ℃ going up the core lead framework;
B) the wiring chopper is moved to pin in the lead frame, and guarantee that wiring chopper center overlaps with interior pin width center, side-play amount does not exceed 1 μ m;
C) the butted line chopper adds that the time is ultrasonic waves and the pressure of 7ms, and the ultrasonic waves frequency is 110KHZ, and the way of output is an electric current, and power is 77mw, and pressure is output as 154gf;
D) under above-mentioned heating-up temperature, ultrasonic waves and pressure effect, the pin contact point produces plastic deformation in gold thread and the lead frame, thereby reaches mutual wedging, and its pull-off force 〉=5gf forms the good ohmic contact;
E) go between to the list on the interior pin according to a)～d) pressing all chips;
When f) 15 interior pins connect 2 above gold threads on same lead frame, press the 2 piece above wiring of chip to the interior pin.
Four, semi-finished product sampling Detection
A) gold goal shearing force: to all have welded successful gold goal and do destructive test in the sampling product, require all gold goal shearing forces all to want 〉=25gf cpk 〉=1.68 with high accuracy gold goal shearing force experimental machine;
B) gold thread pull-off force: to all have welded successful gold thread and do destructive testing in the sampling product, require all gold thread pull-off forces all will reach 〉=5gf cpk value 〉=1.68 with high accuracy gold thread pull-off force test machine;
C) gold thread maximum offset: with high magnification high-acruracy survey microscope gold thread in the sampling product is done the gold thread peak excursion and measure, require maximum offset＜1%;
D) gold goal consistency: to gold thread coherence measurement in the sampling product, finally measure numerical value cpk 〉=1.68 with high magnification high-acruracy survey microscope.
E) plastic packaging is after the X-Ray fluoroscopic machine is had an X-rayed, and gold thread is out of shape situation behind the inspection plastic packaging, and gold thread deformation rate＜5% does not bump silk, open circuit phenomenon;
F) use above-mentioned one, two, three steps continuously according to the output of ultra-large thin type integrated circuit function, and the detection by step 4, manufacture the LQFP100L semi-finished product that ultra-large thin set becomes the required long leads, low radian high-density packages of circuit.
Example 2.LQFP128L
One, material is prepared
1, spun gold: Au＞99.99% Fracture Force (T/S) 〉=10gf elongation (E/L) 8%;
2, lead frame: the slim lead frame of matrix form: ASM 354 * 354
3, wiring chopper: H=35～40 μ m CD=50～65 μ m TIP=118～135 μ m OR=10 °F A=11 °
Two, choice of equipment
ASM AB339 Eagle bonding equipment
Three, production. art technology control
1. gold goal is fired
A) EFO electronic striking bar is regulated 4200V, and guarantee the smooth cleaning of sparking platinum head, gold thread grounded circuit closure;
B) regulating the sparking magnitude of current is 3200mA, makes gold goal hardness meet the wiring requirement;
C) regulating the discharge time of striking sparks is 720 μ s, is the slick and sly flawless gold goals in 41 μ m surface to obtain diameter.
2. chip welding zone wiring
A) will go up the core lead framework utilizes conduction pattern to be heated to 200 ± 2 ℃ on gold wire bonder;
B) the wiring chopper is aimed at chip welding spot, guarantee that chopper central point and welding zone central point side-play amount can not exceed 0.5mm;
C) add on the butted line chopper that the time is ultrasonic waves and the pressure of 13ms.The ultrasonic waves frequency is 130KHZ, and the way of output is an electric current, and power is 43mw.Pressure is output as 32gf.
D) gold goal and chip welding zone contact point produce about temperature more than 2000 ℃ under above-mentioned heating-up temperature ultrasonic waves and pressure acting in conjunction, cause gold goal and chip welding spot to realize eutectic, make it have the good ohmic contact, thereby reach shearing force 〉=25gf.
3. bank is shaped
A) by the wiring chopper spun gold is vertically moved to apart from chip surface 0.07 ± 0.001mm and highly located bending, guarantee during this period that below chip height 0.02mm gold thread thermal stress district does not have distortion, to prevent that the gold goal neck is impaired or to shorten;
B) after the bending,, draw the respective length gold thread according to span value between the corresponding with it lead frame of chip welding zone, its unwrapping wire error in length should be controlled at ± 0.001mm in;
C) move and to have emitted gold thread pin to the lead frame, guarantee gold thread maximum offset＜1% in moving process.
4. lead frame wiring
A) on gold wire bonder, utilize conduction pattern to be heated to 200 ± 2 ℃ going up the core lead framework;
B) the wiring chopper is moved to pin in the lead frame, and guarantee that wiring chopper center overlaps with interior pin width center, side-play amount does not exceed 1 μ m;
C) the butted line chopper adds that the time is ultrasonic waves and the pressure of 13ms, and the ultrasonic waves frequency is 130KHZ, and the way of output is an electric current, and power is 83mw, and pressure is output as 166gf;
D) under above-mentioned heating-up temperature, ultrasonic waves and pressure effect, the pin contact point produces plastic deformation in gold thread and the lead frame, thereby reaches mutual wedging, and its pull-off force 〉=5gf forms the good ohmic contact;
E) go between to the list on the interior pin according to a)～d) pressing all chips;
D) 16 interior pins connect 2 above gold threads on same lead frame, press 2 above wiring of chip to the interior pin.
Four, semi-finished product sampling Detection
A) gold goal shearing force: to all have welded successful gold goal and do destructive test in the sampling product, require all gold goal shearing forces all to want 〉=25gf cpk 〉=1.68 with high accuracy gold goal shearing force experimental machine;
B) gold thread pull-off force: to all have welded successful gold thread and do destructive testing in the sampling product, require all gold thread pull-off forces all will reach 〉=5gf cpk value 〉=1.68 with high accuracy gold thread pull-off force test machine;
C) gold thread maximum offset: with high magnification high-acruracy survey microscope gold thread in the sampling product is done the gold thread peak excursion and measure, require maximum offset＜1%;
D) gold goal consistency: to gold thread coherence measurement in the sampling product, finally measure numerical value cpk 〉=1.68 with high magnification high-acruracy survey microscope.
E) plastic packaging is after the X-Ray fluoroscopic machine is had an X-rayed, and gold thread is out of shape situation behind the inspection plastic packaging, and gold thread deformation rate＜5% does not bump silk, open circuit phenomenon;
Use above-mentioned one, two, three steps continuously according to the output of ultra-large thin type integrated circuit function, and the detection by step 4, manufacture ultra-large thin set and become the required long leads, low radian high-density packages of circuit LQFP128L semi-finished product.
Example 3.LQFP128L
One, material is prepared
1, spun gold: Au＞99.99% Fracture Force (T/S) 〉=10gf elongation (E/L) 8%;
2, lead frame: the slim lead frame of matrix form: ASM 236 * 236
3, wiring chopper: H=35～40 μ m CD=50～65 μ m TIP=118～135 μ m OR=10 °F A=11 °
Two, choice of equipment
ASM AB339 Eagle bonding equipment
Three, production. art technology control
1. gold goal is fired
A) EFO electronic striking bar is regulated 3500V, and guarantee the smooth cleaning of sparking platinum head, gold thread grounded circuit closure;
B) regulating the sparking magnitude of current is 2700mA, makes gold goal hardness meet the wiring requirement;
C) regulating the discharge time of striking sparks is 670 μ s, is the slick and sly flawless gold goals in 39 μ m surface to obtain diameter.
2. chip welding zone wiring
A) will go up the core lead framework utilizes conduction pattern to be heated to 200 ± 2 ℃ on gold wire bonder;
B) the wiring chopper is aimed at chip welding spot, guarantee that chopper central point and welding zone central point side-play amount can not exceed 0.5mm;
C) add on the butted line chopper that the time is ultrasonic waves and the pressure of 7ms.The ultrasonic waves frequency is 110KHZ, and the way of output is an electric current, and power is 37mw.Pressure is output as 28gf.
D) gold goal and chip welding zone contact point produce about temperature more than 1900 ℃ under above-mentioned heating-up temperature ultrasonic waves and pressure acting in conjunction, cause gold goal and chip welding spot to realize eutectic, thereby reach shearing force 〉=25gf, make it have the good ohmic contact.
3. bank is shaped
A) by the wiring chopper spun gold is vertically moved to apart from chip surface 0.07 ± 0.001mm and highly located bending, guarantee during this period that below chip height 0.02mm gold thread thermal stress district does not have distortion, to prevent that the gold goal neck is impaired or to shorten;
B) after the bending,, draw the respective length gold thread according to span value between the corresponding with it lead frame of chip welding zone, its unwrapping wire error in length should be controlled at ± 0.001mm in;
C) move and to have emitted gold thread pin to the lead frame, guarantee gold thread maximum offset＜1% in moving process.
4. lead frame wiring
A) on gold wire bonder, utilize conduction pattern to be heated to 200 ± 2 ℃ going up the core lead framework;
B) the wiring chopper is moved to pin in the lead frame, and guarantee that wiring chopper center overlaps with interior pin width center, side-play amount does not exceed 1 μ m;
C) the butted line chopper adds that the time is ultrasonic waves and the pressure of 8ms, and the ultrasonic waves frequency is 110KHZ, and the way of output is an electric current, and power is 77mw, and pressure is output as 154gf;
D) under above-mentioned heating-up temperature, ultrasonic waves and pressure effect, the pin contact point produces plastic deformation in gold thread and the lead frame, thereby reaches mutual wedging, and its pull-off force 〉=5gf forms the good ohmic contact;
E) go between to the list on the interior pin according to a)～d) pressing all chips;
F) 16 interior pins connect 2 above gold threads on same lead frame, press 2 above wiring of chip to the interior pin.
Four, semi-finished product sampling Detection
A) gold goal shearing force: to all have welded successful gold goal and do destructive test in the sampling product, require all gold goal shearing forces all to want 〉=25gf cpk value 〉=1.68 with high accuracy gold goal shearing force experimental machine;
B) gold thread pull-off force: to all have welded successful gold thread and do destructive testing in the sampling product, require all gold thread pull-off forces all will reach 〉=5gf cpk value 〉=1.68 with high accuracy gold thread pull-off force test machine;
C) gold thread maximum offset: with high magnification high-acruracy survey microscope gold thread in the sampling product is done the gold thread peak excursion and measure, require maximum offset＜1%;
D) gold goal consistency: to gold thread coherence measurement in the sampling product, finally measure numerical value cpk 〉=1.68 with high magnification high-acruracy survey microscope.
E) plastic packaging is after the X-Ray fluoroscopic machine is had an X-rayed, and gold thread is out of shape situation behind the inspection plastic packaging, and gold thread deformation rate＜5% does not bump silk, open circuit phenomenon;
Use above-mentioned one, two, three steps continuously according to the output of ultra-large thin type integrated circuit function, and the detection by step 4, manufacture ultra-large thin set and become the required long leads, low radian high-density packages of circuit LQFP128L semi-finished product.
Example 4.LQFP128L
One, material is prepared
1, spun gold: Au＞99.99% Fracture Force (T/S) 〉=10gf elongation (E/L) 8%;
2, lead frame: the slim lead frame of matrix form: ASM 354 * 354
3, wiring chopper: H=35～40 μ m CD=50～65 μ m TIP=118～135 μ m OR=10 °F A=11 °
Two, choice of equipment
ASM AB339 Eagle bonding equipment
Three, production Technology control
1. gold goal is fired
A) EFO electronic striking bar is regulated 4200V, and guarantee the smooth cleaning of sparking platinum head, gold thread grounded circuit closure;
B) regulating the sparking magnitude of current is 3200mA, makes gold goal hardness meet the wiring requirement;
C) regulating the discharge time of striking sparks is 720 μ s, is the slick and sly flawless gold goals in 40 μ m surface to obtain diameter.
2. chip welding zone wiring
A) will go up the core lead framework utilizes conduction pattern to be heated to 200 ± 2 ℃ on gold wire bonder;
B) the wiring chopper is aimed at chip welding spot, guarantee that chopper central point and welding zone central point side-play amount can not exceed 0.5mm;
C) add on the butted line chopper that the time is ultrasonic waves and the pressure of 13ms.The ultrasonic waves frequency is 130KHZ, and the way of output is an electric current, and power is 43mw.Pressure is output as 32gf.
D) gold goal and chip welding zone contact point produce about temperature more than 2000 ℃ under above-mentioned heating-up temperature ultrasonic waves and pressure acting in conjunction, cause gold goal and chip welding spot to realize eutectic, thereby reach shearing force 〉=25gf, make it have the good ohmic contact.
3. bank is shaped
A) by the wiring chopper spun gold is vertically moved to apart from chip surface 0.07 ± 0.001mm and highly located bending, guarantee during this period that below chip height 0.02mm gold thread thermal stress district does not have distortion, to prevent that the gold goal neck is impaired or to shorten;
B) after the bending,, draw the respective length gold thread according to span value between the corresponding with it lead frame of chip welding zone, its unwrapping wire error in length should be controlled at ± 0.001mm in;
C) move and to have emitted gold thread pin to the lead frame, guarantee gold thread maximum offset＜1% in moving process.
4. lead frame wiring
A) on gold wire bonder, utilize conduction pattern to be heated to 200 ± 2 ℃ going up the core lead framework;
B) the wiring chopper is moved to pin in the lead frame, and guarantee that wiring chopper center overlaps with interior pin width center, side-play amount does not exceed 1 μ m;
C) the butted line chopper adds that the time is ultrasonic waves and the pressure of 13ms, and the ultrasonic waves frequency is 130KHZ, and the way of output is an electric current, and power is 83mw, and pressure is output as 166gf;
D) under above-mentioned heating-up temperature, ultrasonic waves and pressure effect, the pin contact point produces plastic deformation in gold thread and the lead frame, thereby reaches mutual wedging, and its pull-off force 〉=5gf forms the good ohmic contact;
E) go between to the list on the interior pin according to a)～d) pressing all chips;
F) 16 interior pins connect 2 above gold threads on same lead frame, press 2 above wiring of chip to the interior pin.
Four, semi-finished product sampling Detection
A) gold goal shearing force: to all have welded successful gold goal and do destructive test in the sampling product, require all gold goal shearing forces all to want 〉=25gf cpk value 〉=1.68 with high accuracy gold goal shearing force experimental machine;
B) gold thread pull-off force: to all have welded successful gold thread and do destructive testing in the sampling product, require all gold thread pull-off forces all will reach 〉=5gf cpk value 〉=1.68 with high accuracy gold thread pull-off force test machine;
C) gold thread maximum offset: with high magnification high-acruracy survey microscope gold thread in the sampling product is done the gold thread peak excursion and measure, require maximum offset＜1%;
D) gold goal consistency: to gold thread coherence measurement in the sampling product, finally measure numerical value cpk 〉=1.68 with high magnification high-acruracy survey microscope.
E) plastic packaging is after the X-Ray fluoroscopic machine is had an X-rayed, and gold thread is out of shape situation behind the inspection plastic packaging, and gold thread deformation rate＜5% does not bump silk, open circuit phenomenon;
Use above-mentioned one, two, three steps continuously according to the output of ultra-large thin type integrated circuit function, and the detection by step 4, manufacture ultra-large thin set and become the required long leads, low radian high-density packages of circuit LQFP128L semi-finished product.
Claims (2)
1, a kind of production of long-lead, low-arc and high-density golden-wire ball welding is characterized in that by following technological process production:
A) material is prepared
A-1) spun gold: Au＞99.99% Fracture Force 〉=10gf elongation 2～18%;
A-2) lead frame: the slim lead frame of matrix form;
A-3) wiring chopper: H=35～40 μ m, CD=50～65 μ m, TIP=118～135 μ m, OR=6～10 °, FA=7～11 °;
B) choice of equipment
ASM AB339 Eagle bonding equipment;
C) production Technology control
C-1) gold goal is fired
1. the sparking bar of EFO electronic striking system is regulated 3500V～4200V, and guarantee the smooth cleaning of sparking platinum head, gold thread grounded circuit closure;
2. regulating the sparking magnitude of current is 2700mA～3200mA, makes gold goal hardness meet the wiring requirement;
3. regulating the discharge time of striking sparks is 670 μ s～720 μ s, and the gold goal head is melted, and is 40 μ m ± 1 μ m surface slick and sly flawless gold goal--FAB to obtain diameter;
C-2) chip welding zone wiring
1. with sticking chip on the frame carrier and before half-finished material loading that is equipped with of being cured fold up on the gold ball bonding machine worktable, gold wire bonder will be gone up the lead frame of core automatically and send track to, through aiming at automatically and utilizing conduction pattern to be heated to 200 ± 2 ℃;
2. the wiring chopper is aimed at chip welding spot, guarantee that chopper central point and welding zone central point side-play amount can not exceed 0.5mm;
3. the time that adds on the butted line chopper is ultrasonic wave and the pressure of 10ms ± 3ms; Ultrasonic frequency is 120KHZ ± 10KHZ, and the way of output is an electric current, and power is 40mw ± 2mw; Pressure is output as 30gf ± 2gf;
4. gold goal and chip welding zone contact point produce 1900 ℃～2200 ℃ temperature under above-mentioned heating-up temperature ultrasonic wave and pressure acting in conjunction, cause gold goal and chip welding spot to realize congruent melting, make it have the good ohmic contact, thereby reach shearing force 〉=25gf;
C-3) bank is shaped
1. by the wiring chopper spun gold is vertically moved to bending behind chip surface 0.07 ± 0.001mm height, be higher than 0.02mm apart from chip height during this period, gold thread thermal stress district does not have distortion, to prevent that the gold goal neck is impaired or to shorten;
2. after the bending, according to span value between the corresponding with it lead frame of chip welding zone, draw the respective length gold thread, general unwrapping wire length is controlled at 3mm～7mm, and ERROR CONTROL is in ± 0.001mm;
3. move and emitted gold thread pin to the lead frame, guarantee gold thread maximum offset＜1% in moving process;
C-4) lead frame wiring
1. the lead frame of having gone up core is after utilizing conduction pattern to be heated to 200 ± 2 ℃ on the gold wire bonder;
2. the wiring chopper is moved to pin in the lead frame, and guarantee that wiring chopper center overlaps with interior pin width center, side-play amount does not exceed 1 μ m;
3. the butted line chopper adds that the time is ultrasonic wave and the pressure of 10ms ± 3ms, and ultrasonic frequency is 120KHZ ± 10KHZ, and the way of output is an electric current, and power is 80mw ± 3mw, and pressure is output as 160gf ± 6gf;
4. under above-mentioned heating-up temperature, ultrasonic wave and pressure effect, the pin contact point produces high temperature, High Voltage in gold thread and the lead frame, makes pin generation plastic deformation in gold thread and the lead frame, thereby reaches mutual wedging, its pull-off force 〉=5gf forms the good ohmic contact;
5. go between to the list on the interior pin according to 1.～4. pressing all chips;
6. on same chip bonding on the carrier of same lead frame, connect the gold thread more than 2 in DIP, SOP and the SSOP on the pin;
D) semi-finished product sampling Detection
1. gold goal shearing force: to all have welded successful gold goal and do destructive test in the sampling product, require all gold goal shearing forces all to want 〉=25gf cpk 〉=1.68 with precision gold goal shearing force;
2. gold thread pull-off force: to all have welded successful gold thread and do destructive testing in the sampling product, require all gold thread pull-off forces all will reach 〉=5gf cpk 〉=1.68 with high accuracy gold thread pull-off force test machine;
3. gold thread maximum offset: with high magnification high-acruracy survey microscope gold thread in the sampling product is done the gold thread peak excursion and measure, require maximum offset＜1%;
4. gold goal consistency: to gold thread coherence measurement in the sampling product, finally measure numerical value cpk value 〉=1.68 with high magnification high-acruracy survey microscope;
5. after the X-Ray fluoroscopic machine is had an X-rayed, gold thread is out of shape situation behind the inspection plastic packaging, and gold thread deformation rate＜5% does not bump silk, open circuit phenomenon;
E) use continuously above-mentioned a), b), c) step, and the detection by step d) manufactures the LQFP100L semi-finished product that ultra-large thin set becomes the required long leads, low radian high-density packages of circuit.
2, a kind of production of long-lead, low-arc and high-density golden-wire ball welding according to claim 1, it is characterized in that described c-4) in the lead frame wiring step on same chip bonding on the carrier of same lead frame, connect gold thread more than 2 in DIP, SOP and the SSOP on the pin above 8.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2005100227270A CN100530578C (en) | 2005-12-13 | 2005-12-13 | Production of long-lead, low-arc and high-density golden-wire ball welding |
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| CNB2005100227270A CN100530578C (en) | 2005-12-13 | 2005-12-13 | Production of long-lead, low-arc and high-density golden-wire ball welding |
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| CN102110622B (en) * | 2009-12-25 | 2013-03-20 | 无锡华润安盛科技有限公司 | Quota calculation method for packaging metal wire |
| CN102339766A (en) * | 2010-07-22 | 2012-02-01 | 上海华虹Nec电子有限公司 | Long distance connection method during line repair |
| CN104217975A (en) * | 2014-10-03 | 2014-12-17 | 上海工程技术大学 | Method for measuring IC (integrated circuit) plastic package gold wire offset |
| CN110335836A (en) * | 2019-06-28 | 2019-10-15 | 广东阿达智能装备有限公司 | Bonding wire control device |
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| 混合集成电路键合工序能力指数探索. 李双龙.电子与封装，第5卷第1期. 2005 |
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