CN100525111C - Radio frequency double-channel voltage controlled oscillator based on central tapped inductive switch - Google Patents
Radio frequency double-channel voltage controlled oscillator based on central tapped inductive switch Download PDFInfo
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- CN100525111C CN100525111C CNB2006100296453A CN200610029645A CN100525111C CN 100525111 C CN100525111 C CN 100525111C CN B2006100296453 A CNB2006100296453 A CN B2006100296453A CN 200610029645 A CN200610029645 A CN 200610029645A CN 100525111 C CN100525111 C CN 100525111C
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Abstract
This invention relates to a RF double-band voltage-controlled oscillator based on a central tapping inductor switch, in which, IEEE802.11 is one of the radio LAN protocols widely used in the world at present and the RF front of a radio router based on said protocol needs a phase-locking ring to generate local signals between 2.4G and 5G bands and a background technology applies an inductor switch double band voltage-controlled oscillator, which needs 4 inductors, this invented oscillator applies one inductor with a central tapping to replace the two of the four in the background technology, which is advantaged that the chip area occupied by the IC central tapping on the chip is much smaller than that occupied by the two inductors and especially suitable for being a RF double band voltage-controlled oscillator in the chip of a RF front of a radio router.
Description
Technical field
The present invention relates to a kind of radio frequency two-band voltage controlled oscillator based on the centre cap inductance switch, definitely say, relate to a kind of radio frequency double-frequency band inductor electric capacity voltage controlled oscillator, belong to the technical field of integrated circuit (IC) design and signal processing based on the centre cap inductance switch.
Background technology
In recent years, along with the radio frequency integrated circuit technology rapid development, people have used many wireless communications products in daily life: mobile phone, Bluetooth communication product and global positioning system or the like.In addition, along with the appearance of WLAN (wireless local area network), people can surf the Net by wireless router, thereby have saved the inconvenience that wiring logging-on function brings, for the user has brought very big flexibility.
IEEE802.11 is one of most popular protocol of wireless local area network in the world now.After 1999 had issued IEEE802.11b and IEEE802.11a simultaneously, IEEE issued IEEE802.11g again in 2003 continue IEEE.For the compatibility issue between the resolution protocol, become a big focus based on the hardware development of multi-protocols.Yet the publication and the paper of IEEE in 2005 distribution show, still has many difficult points still unresolved technically based on the hardware of multi-protocols.
The same with other wireless product, need utilize phase-locked loop to produce local oscillation signal based on the radio-frequency front-end of multi-protocols wireless router.Different is, the working frequency range that IEEE802.11b and IEEE802.11g select for use is 2.4GHz-2.4835GHz, and the working frequency range that IEEE802.11a selects for use is 5.15GHz-5.35GHz (can be used for indoor and outdoor) or 5.725GHz-5.85GHz (only limiting to outdoor use).Three sub-protocols have been selected two different working frequency range for use: 2.4G section and 5G section.
Use lower power consumption and less chip area to realize that best performance is one of target of radio frequency integrated circuit technical development.By " hardware multiplexing " technology, promptly only use a circuit and adopt transistor between two working frequency range, to switch as switch, can save about 50% power consumption and certain chip area footprints.So " hardware multiplexing " is based on the Important Thought of multi-protocols hardware development.
Voltage controlled oscillator (VCO) is the nucleus module in the phase-locked loop circuit, and the needed local oscillation signal of radio-frequency front-end is produced by voltage controlled oscillator.A kind of voltage controlled oscillator (LC VCO) is arranged in the voltage controlled oscillator, because its phase noise performance is relatively good, therefore this oscillator extensively is used among the radio frequency integrated circuit.The frequency of oscillation of this oscillator is mainly by inductance in the resonant circuit and electric capacity decision.In traditional radio frequency integrated circuit, voltage controlled oscillator all changes working frequency range by the switch switch-capacitor.But the power consumption of LC VCO can increase along with the increase of electric capacity.Switch to the 2.4G frequency range from the 5G frequency range, need to increase the electric capacity in the resonant circuit, the power consumption of oscillator also can increase thereupon.So based on the LC VCO of switch switch-capacitor, power consumption is generally all bigger.Yet the power consumption of LC VCO is to the variation relative insensitivity of inductance value.Under the situation that obtains identical working frequency range switching, adopt switch to switch inductance and come the LC VCO of switch operating frequency range, power consumption is generally all smaller.
Since the chip area footprints of integrated on-chip inductor relatively large (account for usually whole radio frequency integrated circuit chip area 60% one 80%), adopt to change inductance parameters and can take bigger chip area as the mode that working frequency range switches.At the beginning of 2006, Seong-Mo Yim and Kenneth K.O have delivered the technical scheme about inductance switch on " IEEE Transactions on Microwave Theory andTechniques ", as shown in Figure 1, see document [1].The inductance switch two-band voltage controlled oscillator core part (promptly do not comprise output buffer, also do not draw among the figure) that document [1] is adopted needs 4 inductance, and the chip area that integrated 4 on-chip inductors need take is bigger.
Summary of the invention
The technical problem to be solved in the present invention is to release a kind of radio frequency double-frequency band inductor electric capacity voltage controlled oscillator based on the centre cap inductance switch.This LC VCO has low in energy consumption, and the advantage that chip area footprints is less relatively, its performance index meet the requirement of the many standards of IEEE802.11a/b/g to hardware resource fully.Because in the 5G frequency range, IEEE802.11a provides the 5.725GHz-5.85GHz frequency range that can be used for indoor and outdoor 5.15GHz-5.35GHz frequency range and only limit to outdoor use, the present invention only uses 5.15GHz-5.35GHz frequency range in the 5G frequency range.
For solving above-mentioned technical problem, the present invention adopts following technical scheme: two inductance on (1) usefulness sheet in 4 inductance of integration hub tap inductance replacement background technology.See Fig. 2.This on-chip inductor can provide the inductance of two symmetries on electric simultaneously, and draws tap in both centres, and that it takies area of chip is littler than the asymmetric on-chip inductor with same inductance value (only showing as an inductance on electric).(2) suitably change circuit structure, and the object that adopts the centre cap inductance to control as switch, as shown in Figure 3, the core of so this voltage controlled oscillator only needs 3 inductance, lack than voltage controlled oscillator shown in Figure 1 and to use an inductance, it takies area of chip and reduces about 20%-50%.In addition, the symmetry of centre cap inductance helps to improve the quality factor q of its inductance, and then improves the phase noise performance of voltage controlled oscillator.Described radio frequency two-band LCVCO based on the centre cap inductance switch contains negative resistance circuit, resonant circuit, resonator switching circuit and biasing circuit.Negative resistance circuit all is made up of the PMOS pipe, to reduce phase noise; Resonant circuit has adopted on the sheet integrating varactor on the integrated inductor and sheet, and no any outer passive device is to reduce production costs; The resonator switching circuit has adopted the NMOS pipe as switching device, changes the total inductance amount of resonant circuit by Closing Switch short circuit centre cap inductance, with the purpose of the frequency of oscillation that realizes changing described LCVCO; Biasing circuit provides necessary direct current biasing for whole voltage-controlled oscillator circuit.
Now specifically describe technical scheme of the present invention in conjunction with the accompanying drawings.
A kind of radio frequency double-frequency band inductor electric capacity voltage controlled oscillator based on the centre cap inductance switch, contain negative resistance circuit, resonant circuit, biasing circuit and seven lead ends, negative resistance circuit is made up of the first metal-oxide-semiconductor M1 and the second metal-oxide-semiconductor M2, the first metal-oxide-semiconductor M1 and the second metal-oxide-semiconductor M2 are the PMOS pipes, resonant circuit contains the first variable capacitance diode C1, the second variable capacitance diode C2, first inductance L 1, second inductance L 2, the first variable capacitance diode C1 and the second variable capacitance diode C2 are integrated on the sheet, be operated in the NMOS pipe of accumulation area-depletion region, first inductance L 1 and second inductance L 2 are asymmetric and go up integrated inductor, the biasing constant-current source that biasing circuit is made up of the 5th metal-oxide-semiconductor M5, the 5th metal-oxide-semiconductor M5 is the PMOS pipe, seven lead ends are Vcc ends, the Vbias end, the Vout+ end, the Vout-end, the Ctrl end, SW end and ground wire, Vcc end and ground wire are respectively the inputs of voltage source+end and voltage source-end, the Vbias end is the input of bias voltage, the Ctrl end is the input of control voltage, the SW end is a frequency range switched voltage input, Vout+ end and Vout-end are respectively the positive and the reversed-phase output of radiofrequency signal, the source electrode of the first metal-oxide-semiconductor M1 is connected with the source electrode of the second metal-oxide-semiconductor M2, the grid of the first metal-oxide-semiconductor M1 is connected with the drain electrode of the second metal-oxide-semiconductor M2, the grid of the second metal-oxide-semiconductor M2 is connected with the drain electrode of the first metal-oxide-semiconductor M1, be connected across after the first variable capacitance diode C1 and the second variable capacitance diode C2 series connection between the drain electrode of the drain electrode of the first metal-oxide-semiconductor M1 and the second metal-oxide-semiconductor M2, the tie point of the first variable capacitance diode C1 and the second variable capacitance diode C2 is connected with the Ctrl end, the drain electrode of the drain electrode of the first metal-oxide-semiconductor M1 and the second metal-oxide-semiconductor M2 is connected with the Vout-end with the Vout+ end respectively, one end of first inductance L 1 is connected with the drain electrode of the first metal-oxide-semiconductor M1, one end of second inductance L 2 is connected with the drain electrode of the second metal-oxide-semiconductor M2, it is characterized in that, it also contains resonator switching circuit and the 3rd inductance L 3, the resonator switching circuit is made up of the 3rd metal-oxide-semiconductor M3 and the 4th metal-oxide-semiconductor M4, the 3rd metal-oxide-semiconductor M3 and the 4th metal-oxide-semiconductor M4 are the NMOS pipes, the 3rd inductance L 3 is to contain integrated inductor on the sheet of centre tapped symmetric form, two terminations of the 3rd inductance L 3 are connected with the other end of first inductance L 1 and second inductance L 2 respectively, the centre cap of the 3rd inductance L 3 is connected with ground wire, the source electrode of the 3rd metal-oxide-semiconductor M3 and the 4th metal-oxide-semiconductor M4 is connected the back and is connected with ground wire, the drain electrode of the 3rd metal-oxide-semiconductor M3 and the 4th metal-oxide-semiconductor M4 is connected with the other end of first inductance L 1 and second inductance L 2 respectively, the grid of the 3rd metal-oxide-semiconductor M3 and the 4th metal-oxide-semiconductor M4 is connected the back and is connected the drain electrode of the 5th metal-oxide-semiconductor M5 with the SW end, grid and source electrode respectively with the source electrode of the first metal-oxide-semiconductor M1, the Vbias end is connected with the Vcc end.The circuit diagram of this voltage controlled oscillator is shown in Fig. 3.
The invention has the advantages that: adopt to contain the use number that centre tapped inductance reduces the inductance in the voltage controlled oscillator, guarantee that the purpose that reduces whole voltage controlled oscillator chip area occupied can realize.
Following table is listed voltage controlled oscillator of the present invention, promptly power consumption be 4.08mW, adopt that 0.18 μ m CMOS technology makes based on the two-band voltage controlled oscillator (being designated as VCO1) of centre cap inductance switch and comparative result based on the two-band voltage controlled oscillator (being designated as VCO2) of scheme shown in Figure 1:
| Parameter | VCO1 | VCO2 |
| Switch solution | Centre cap inductance switch (technology side of the present invention) | Standard inductor switch (scheme shown in Figure 1) |
| Power consumption (mW) | 4.08 | 4.08 |
| Tuning range (GHz) | 5G frequency range: 5.135-5.365 2.4G frequency ranges: 2.38-2.52 | 5G frequency range: 5.128-5.358 2.4G frequency ranges: 2.386-2.53 |
| Chip area (mm 2) | 0.95×0.58 | 1.4×0.62 |
As can be seen from the above table, under identical power consumption, voltage controlled oscillator chip occupying area of the present invention is 0.551mm
2, and be 0.868mm based on the voltage controlled oscillator chip occupying area of scheme shown in Figure 1
2, in other words, technical scheme of the present invention can be saved chip occupying area about 36.5%.
Fig. 4 (a) and (b) showed that respectively voltage controlled oscillator of the present invention is as the local oscillator of the radio-frequency front-end phase noise simulation result in 5G frequency range and 2.4G frequency range.As can be seen from Figure, in the 5G frequency range, its phase noise is-120.0dBc/Hz@1MHz; In the 2.4G frequency range, its phase noise is-126.2dBc/[email protected] to the requirement of IEEE802.11b/g standard, in the 2.4G frequency range, the phase noise of local oscillator must be less than-110dBc/Hz@1MHz; According to the requirement of IEEE802.11a standard, in the 5G frequency range, the phase noise of local oscillator also must be less than-110dBc/Hz@1MHz[2].Therefore, voltage controlled oscillator of the present invention meets the requirement of IEEE802.11a/b/g standard fully.
Description of drawings
Fig. 1 is the circuit diagram of document [1] accepted standard inductance switch two-band voltage controlled oscillator.
Fig. 2 (a) is for containing the centre tapped domain of going up integrated inductor.
Fig. 2 (b) is for containing the centre tapped circuit symbol of going up integrated inductor.
Fig. 3 is the circuit diagram of the radio frequency two-band voltage controlled oscillator based on the centre cap inductance switch of the present invention.
The phase noise curve that Fig. 4 (a) obtains for voltage controlled oscillator of the present invention emulation when frequency is 5.24GHz.
The phase noise curve that Fig. 4 (b) obtains for voltage controlled oscillator of the present invention emulation when frequency is 2.4GHz.
Embodiment
Now describe technical scheme of the present invention in conjunction with the accompanying drawings and embodiments in detail.
Embodiment
Present embodiment has and the identical circuit structure of circuit shown in Figure 3.The components and parts of present embodiment and circuit parameter are enumerated as follows:
The inductance value of first inductance L 1, second inductance L 2 and the 3rd inductance L 3 is respectively: 0.292nH, 0.292nH and 1.083nH;
The electric capacitance change scope of the first variable capacitance diode C1, the second variable capacitance diode C2 is: 568.7fF-764.4fF;
The breadth length ratio of the first metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2 all is (96/0.18) μ m/ μ m;
The breadth length ratio of the 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4 all is (960/0.18) μ m/ μ m;
The breadth length ratio of the 5th metal-oxide-semiconductor M5 is (1000/1) μ m/ μ m;
The voltage of voltage source+end is 1.25V;
The bias voltage of Vbias end is 0V;
The control change in voltage scope of Ctrl end is 0-1.25V;
The input voltage of SW end is respectively: 0V, voltage controlled oscillator are operated in 2.4G frequency range and 1.25V, and voltage controlled oscillator is operated in the 5G frequency range.
Operation principle.
The circuit diagram of the radio frequency double-frequency band inductor electric capacity voltage controlled oscillator based on the centre cap inductance switch of the present invention as shown in Figure 3.The 3rd inductance L 3 contains centre cap, is integrated inductor on a kind of sheet of symmetric form, and half of the coil of this inductance is with second half interlaced being embedded in.When the difference electric current flowed into from the two ends of this inductance, the direction of the two-part coil midstream overcurrent of this inductance was opposite, and making the very strong magnetic coupling of formation between the two-part coil has increased total inductance value.So containing centre tapped inductance only need take less chip area and just can obtain bigger inductance value.
In voltage controlled oscillator of the present invention, the 5th metal-oxide-semiconductor M5 provides necessary bias current for pierce circuit.Because the passive device in the actual resonant circuit: first inductance L 1, second inductance L 2, the 3rd inductance L 3, the first variable capacitance diode C1 and the second variable capacitance diode C2, all be lossy during work, therefore the cross-couplings that needs the first metal-oxide-semiconductor M1 and second metal-oxide-semiconductor M2 composition to as negative resistance device to the resonant circuit makeup energy, to keep the vibration of resonant circuit.
The input signal of Ctrl end is provided by the output of the charge pump in the phase-locked loop, is intended to the resonance frequency of resonant circuit is finely tuned.The first variable capacitance diode C1 and the second variable capacitance diode C2 are actual in being operated in the NMOS pipe of accumulation area-depletion region.When the current potential rising of Ctrl end, the NMOS pipe enters accumulation area, and this moment, the first variable capacitance diode C1 and the second variable capacitance diode C2 increased, and the resonance frequency of resonant circuit descends; When the current potential decline of Ctrl end, the NMOS pipe enters depletion region, and this moment, the first variable capacitance diode C1 and the second variable capacitance diode C2 reduced, and the resonance frequency of resonant circuit rises.
The 3rd metal-oxide-semiconductor M3 and the 4th metal-oxide-semiconductor M4 constitute the resonator switching circuit of voltage controlled oscillator, i.e. frequency range switching switch circuit.When the input signal of SW end is low level, the 3rd metal-oxide-semiconductor M3 and the 4th metal-oxide-semiconductor M4 close, the first variable capacitance diode C1, the second variable capacitance diode C2, first inductance L 1, second inductance L 2 and the 3rd inductance L 3 constitute the resonant circuit of voltage controlled oscillators at this moment, and this voltage controlled oscillator is operated in the 2.4G frequency range greatly because of the LC product of resonant circuit; When the input signal of SW end is high level, the 3rd metal-oxide-semiconductor M3 and the 4th metal-oxide-semiconductor M4 open, at this moment, for radio frequency, be equivalent to the 3rd inductance L 3 by short circuit, the first variable capacitance diode C1, the second variable capacitance diode C2, first inductance L 1, second inductance L 2 constitute the resonant circuit of voltage controlled oscillator, and this voltage controlled oscillator is because of the less 5G frequency range that is operated in of the LC product of resonant circuit.
List of references
[1]S.M.Yim and K.K.O，“Switched Resonators and Their Applicationsin a Dual-Band Monolithic CMOS LC-Tuned VCO，”IEEETrans.Microw.Theory Tech.，vol.54，no.1，pp.74—81，Jan.2006.
[2]M.Brandolini，P.Rossi，D.Manstretta and F.Svelto，“TowardMultistandard Mobile Terminal—Fully Integrated ReceiversRequirements and Architectures，”IEEE J.Solid-State Circuits，vol.53，no.3，pp.1026—1038，Mar.2005.
Claims (3)
1, a kind of radio frequency double-frequency band inductor electric capacity voltage controlled oscillator based on the centre cap inductance switch, contain negative resistance circuit, resonant circuit, biasing circuit and seven lead ends, negative resistance circuit is made up of first metal-oxide-semiconductor (M1) and second metal-oxide-semiconductor (M2), first metal-oxide-semiconductor (M1) and second metal-oxide-semiconductor (M2) are the PMOS pipes, resonant circuit contains first variable capacitance diode (C1), second variable capacitance diode (C2), first inductance (L1), second inductance (L2), first variable capacitance diode (C1) and second variable capacitance diode (C2) are integrated on the sheet, be operated in the NMOS pipe of accumulation area-depletion region, first inductance (L1) and second inductance (L2) are asymmetric and go up integrated inductor, the biasing constant-current source that biasing circuit is made up of the 5th metal-oxide-semiconductor (M5), the 5th metal-oxide-semiconductor (M5) is the PMOS pipe, seven lead ends are Vcc ends, the Vbias end, the Vout+ end, the Vout-end, the Ctrl end, SW end and ground wire, Vcc end and ground wire are respectively the inputs of voltage source+end and voltage source-end, the Vbias end is the input of bias voltage, the Ctrl end is the input of control voltage, the SW end is a frequency range switched voltage input, Vout+ end and Vout-end are respectively the positive and the reversed-phase output of radiofrequency signal, the source electrode of first metal-oxide-semiconductor (M1) is connected with the source electrode of second metal-oxide-semiconductor (M2), the grid of first metal-oxide-semiconductor (M1) is connected with the drain electrode of second metal-oxide-semiconductor (M2), the grid of second metal-oxide-semiconductor (M2) is connected with the drain electrode of first metal-oxide-semiconductor (M1), be connected across after the series connection of first variable capacitance diode (C1) and second variable capacitance diode (C2) between the drain electrode of the drain electrode of first metal-oxide-semiconductor (M1) and second metal-oxide-semiconductor (M2), the tie point of first variable capacitance diode (C1) and second variable capacitance diode (C2) is connected with the Ctrl end, the drain electrode of the drain electrode of first metal-oxide-semiconductor (M1) and second metal-oxide-semiconductor (M2) is connected with the Vout-end with the Vout+ end respectively, one end of first inductance (L1) is connected with the drain electrode of first metal-oxide-semiconductor (M1), one end of second inductance (L2) is connected with the drain electrode of second metal-oxide-semiconductor (M2), it is characterized in that, it also contains resonator switching circuit and the 3rd inductance (L3), the resonator switching circuit is made up of the 3rd metal-oxide-semiconductor (M3) and the 4th metal-oxide-semiconductor (M4), the 3rd metal-oxide-semiconductor (M3) and the 4th metal-oxide-semiconductor (M4) are the NMOS pipes, the 3rd inductance (L3) is to contain integrated inductor on the sheet of centre tapped symmetric form, two terminations of the 3rd inductance (L3) are connected with the other end of first inductance (L1) with second inductance (L2) respectively, the centre cap of the 3rd inductance (L3) is connected with ground wire, the source electrode of the 3rd metal-oxide-semiconductor (M3) and the 4th metal-oxide-semiconductor (M4) is connected the back and is connected with ground wire, the drain electrode of the 3rd metal-oxide-semiconductor (M3) and the 4th metal-oxide-semiconductor (M4) is connected with the other end of first inductance (L1) with second inductance (L2) respectively, the grid of the 3rd metal-oxide-semiconductor (M3) and the 4th metal-oxide-semiconductor (M4) is connected the back and is connected the drain electrode of the 5th metal-oxide-semiconductor (M5) with the SW end, grid and source electrode respectively with the source electrode of first metal-oxide-semiconductor (M1), the Vbias end is connected with the Vcc end.
2, the radio frequency double-frequency band inductor electric capacity voltage controlled oscillator based on the centre cap inductance switch according to claim 1 is characterized in that half of the coil of the 3rd inductance (L3) is with second half interlaced being embedded in.
3, the radio frequency double-frequency band inductor electric capacity voltage controlled oscillator based on the centre cap inductance switch according to claim 1 and 2 is characterized in that the components and parts of this voltage controlled oscillator and circuit parameter are enumerated as follows:
The inductance value of first inductance (L1), second inductance (L2) and the 3rd inductance (L3) is respectively: 0.292nH, 0.292nH and 1.083nH;
The electric capacitance change scope of first variable capacitance diode (C1), second variable capacitance diode (C2) is: 568.7fF-764.4fF;
The breadth length ratio of first metal-oxide-semiconductor (M1), second metal-oxide-semiconductor (M2) all is (96/0.18) μ m/ μ m;
The breadth length ratio of the 3rd metal-oxide-semiconductor (M3), the 4th metal-oxide-semiconductor (M4) all is (960/0.18) μ m/ μ m;
The breadth length ratio of the 5th metal-oxide-semiconductor (M5) is (1000/1) μ m/ μ m;
The voltage of voltage source+end is 1.25V;
The bias voltage of Vbias end is 0V;
The control change in voltage scope of Ctrl end is 0-1.25V;
The input voltage of SW end is respectively: 0V, voltage controlled oscillator are operated in 2.4G frequency range and 1.25V, and voltage controlled oscillator is operated in the 5G frequency range.
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| GB2483899A (en) * | 2010-09-24 | 2012-03-28 | Cambridge Silicon Radio Ltd | Digitally controllable LC oscillator with fine control resolution |
| CN102548053B (en) * | 2010-12-15 | 2018-01-19 | 盛乐信息技术（上海）有限公司 | A kind of wireless router and its implementation based on 2.4G |
| US9425737B1 (en) * | 2015-03-16 | 2016-08-23 | Futurewei Technologies, Inc. | Tapped inductor voltage controlled oscillator |
| CN110190830B (en) * | 2019-07-04 | 2021-08-06 | 电子科技大学 | Dual-band miniaturized digital phase shifter |
| TWI749398B (en) * | 2019-11-15 | 2021-12-11 | 瑞昱半導體股份有限公司 | Inductor-capacitor oscillator and common mode resonator |
| CN117559915B (en) * | 2024-01-12 | 2024-03-26 | 西北工业大学 | Dual-path inductance-based dual-mode oscillator |
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