CN100522478C - 一种磷化镓晶片双面抛光方法 - Google Patents
一种磷化镓晶片双面抛光方法 Download PDFInfo
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- CN100522478C CN100522478C CNB2006101125137A CN200610112513A CN100522478C CN 100522478 C CN100522478 C CN 100522478C CN B2006101125137 A CNB2006101125137 A CN B2006101125137A CN 200610112513 A CN200610112513 A CN 200610112513A CN 100522478 C CN100522478 C CN 100522478C
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CNB2006101125137A CN100522478C (zh) | 2006-08-22 | 2006-08-22 | 一种磷化镓晶片双面抛光方法 |
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CNB2006101125137A CN100522478C (zh) | 2006-08-22 | 2006-08-22 | 一种磷化镓晶片双面抛光方法 |
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CN101130229A CN101130229A (zh) | 2008-02-27 |
CN100522478C true CN100522478C (zh) | 2009-08-05 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102554750A (zh) * | 2010-12-29 | 2012-07-11 | 北京有色金属研究总院 | 一种锑化镓晶片双面抛光方法 |
Families Citing this family (10)
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CN101661869B (zh) * | 2008-08-25 | 2012-06-13 | 北京有色金属研究总院 | 一种砷化镓晶片抛光后的清洗方法 |
CN101829946B (zh) * | 2010-05-28 | 2013-01-09 | 江苏南晶红外光学仪器有限公司 | 红外窗口片的双面加工工艺 |
CN102172878B (zh) * | 2010-12-16 | 2012-12-12 | 浙江旭盛电子有限公司 | 一种硅片的抛光方法 |
CN102240967A (zh) * | 2011-06-24 | 2011-11-16 | 中国科学院福建物质结构研究所 | 可用于光电器件衬底的氧化锌单晶抛光技术 |
CN102779730B (zh) * | 2012-08-09 | 2015-02-25 | 合肥彩虹蓝光科技有限公司 | 一种用于半导体晶圆减薄工艺的除蜡方法 |
CN103692337A (zh) * | 2013-12-18 | 2014-04-02 | 杭州晶地半导体有限公司 | 一种采用混合果糖粘贴硅片的硅抛光方法 |
CN104409582A (zh) * | 2014-11-19 | 2015-03-11 | 迪源光电股份有限公司 | 一种led晶圆粘片的方法 |
CN105619183A (zh) * | 2014-12-19 | 2016-06-01 | 南京京晶光电科技有限公司 | 一种蓝宝石研磨加工超薄片***及其方法 |
CN105965351B (zh) * | 2016-05-20 | 2018-07-31 | 中航工业哈尔滨轴承有限公司 | 一种耐热钢套圈沟道磨削工艺 |
CN106925565B (zh) * | 2017-02-09 | 2018-08-24 | 同济大学 | 一种lbo晶体的刻蚀清洗方法 |
Citations (5)
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CN1273160A (zh) * | 1999-05-11 | 2000-11-15 | 北京有色金属研究总院 | 直径2英寸非掺<111>磷化镓单晶片抛光工艺 |
US20030064902A1 (en) * | 2001-10-03 | 2003-04-03 | Memc Electronic Materials Inc. | Apparatus and process for producing polished semiconductor wafers |
JP2003109927A (ja) * | 2001-09-28 | 2003-04-11 | Dowa Mining Co Ltd | 半導体ウエハの加工方法 |
CN1457507A (zh) * | 2001-03-06 | 2003-11-19 | 住友电气工业株式会社 | 化合物半导体晶片的制备方法 |
CN1484567A (zh) * | 2001-01-04 | 2004-03-24 | 科林研发公司 | 使用表面面积减少的抛光片使半导体晶片抛光和平坦化的***和方法 |
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2006
- 2006-08-22 CN CNB2006101125137A patent/CN100522478C/zh active Active
Patent Citations (5)
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CN1273160A (zh) * | 1999-05-11 | 2000-11-15 | 北京有色金属研究总院 | 直径2英寸非掺<111>磷化镓单晶片抛光工艺 |
CN1484567A (zh) * | 2001-01-04 | 2004-03-24 | 科林研发公司 | 使用表面面积减少的抛光片使半导体晶片抛光和平坦化的***和方法 |
CN1457507A (zh) * | 2001-03-06 | 2003-11-19 | 住友电气工业株式会社 | 化合物半导体晶片的制备方法 |
JP2003109927A (ja) * | 2001-09-28 | 2003-04-11 | Dowa Mining Co Ltd | 半導体ウエハの加工方法 |
US20030064902A1 (en) * | 2001-10-03 | 2003-04-03 | Memc Electronic Materials Inc. | Apparatus and process for producing polished semiconductor wafers |
Non-Patent Citations (1)
Title |
---|
非掺锑化镓抛光工艺研究. 樊成才,李忠义,孔峰.半导体情报,第35卷第3期. 1998 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102554750A (zh) * | 2010-12-29 | 2012-07-11 | 北京有色金属研究总院 | 一种锑化镓晶片双面抛光方法 |
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CN101130229A (zh) | 2008-02-27 |
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