CN100511668C - Rectangular nitride semiconductor substrate with identified inner and outer surfaces - Google Patents
Rectangular nitride semiconductor substrate with identified inner and outer surfaces Download PDFInfo
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- CN100511668C CN100511668C CNB2006100044236A CN200610004423A CN100511668C CN 100511668 C CN100511668 C CN 100511668C CN B2006100044236 A CNB2006100044236 A CN B2006100044236A CN 200610004423 A CN200610004423 A CN 200610004423A CN 100511668 C CN100511668 C CN 100511668C
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Abstract
Available GaN chip has mirror external side and rough internal side, which may be distinguished with the naked eyes. The distinction is hard, and the unprotected internal side will have particles attached, increased bending, crack, etc. One method of distinguishing the external side and the internal side of rectangular nitride semiconductor chip without watching the surface roughness is provided. The method is to form distinguishing notches of different angles in the corners, to cut corner in different external and internal cut quantity, or to write distinguishing text. In this way, the internal side may be made to become more smooth like the external side, and this can reduce particle attachment, bending, crack, etc.
Description
Technical field
The present invention relates to rectangular nitride semiconductor substrate, in add list simply, work hard in the difference.Because the GaN substrate is transparent, so there be the problem different with the GaAs wafer with opaque Si wafer.Also can see from the surface even if add mark inside, also can see from the inside even if add mark on the surface.If circular wafer then can come the display list the inside by cut the different string of 2 class length (OF, IF) from side week.But that is that all right is ripe for the growing technology of GaN substrate, can not produce sizable circular wafer.In the situation of circular wafer, maximum gauge also has only about 1 inch～2 inches.
Because it is difficult making circular wafer, be rectangle wafer about 1cm～2cm so also can make 1 limit.In the situation of rectangle wafer, because had 4 limits, so for the display surface the inside, can not be again from side week cutting string.
Background technology
The processing of GaN substrate is made up of operations such as roughing (grind and cut), shape processing, rough lapping, polishing grinding, cleanings.Now, with the grinding agent of SiC and diamond etc., make surperficial mirror-polishing (the surface roughness Ra≤1nm) of GaN.With coarse plain emery wheel (#400～1000) the inside is processed.The inside becomes the big ground-glass appearance of surface roughness that grinds with coarse plain emery wheel.So the surface is significantly different with the surface roughness of the inside.So can with the naked eye distinguish the surface and the inside of GaN substrate.Therefore in the situation of rectangle wafer, watch the table the inside to distinguish by the difference of matsurface minute surface with eyes.So because do not identify with not being provided with in the special table inside the optic difference difference table.
In circular wafer, need to represent the line (OF) in orientation, so but in the situation of rectangle wafer because can utilize any one side in four limits not need OF as azimuth index.In the situation of GaN rectangle wafer, neither need again to identify in the add list and also do not need additional party bit-identify again.Present situation that Here it is.
For having proposed several schemes without the semiconductor wafer in the arc excision breach display list of OF and IF etc.
Patent documentation 2 has proposed without OF, IF etc. the laser beam irradiation that focuses on to be formed round point shape fusion hole on the line that wafer upper edge specific direction extends, with the scheme of the Si circle wafer of its display orientation and Biao Li.
Patent documentation 3 has proposed not to be provided with the face of usefulness otch such as OF, IF and table the inside removes different schemes of coming the circular wafer of Si of display orientation and table the inside.
Patent documentation 4 has proposed the scheme for the circular wafer of Si of removing the table the inside in the table of distinguishing the Si wafer clearly asymmetricly.
Patent documentation 5 has also proposed the scheme that makes face remove the circular wafer of asymmetric Si in the table in order to distinguish.
Patent documentation 6 has at first proposed peripheral part is carried out the scheme of the GaN wafer of the self-support that face removes.
Patent documentation 7 has at first proposed to write with laser on to the not only hard but also crisp gallium nitride wafer of visible transparent the method for literal.
[patent documentation 1] Japan puts down into 2 years 2-144908 patent gazettes of announcing " manufacture method of semiconductor device "
[patent documentation 2] Japan clear and 60 years the announcement 60-167426 patent gazette " semiconductor junction wafer "
The 2000-331898 patent gazette " semiconductor wafer of additional cut " that [patent documentation 3] Japan announced in 2000
Clear and the 58 years disclosed 58-71616 patent gazettes " manufacture method of semiconductor device " of [patent documentation 4] Japan
[patent documentation 5] Japan puts down into 8 years disclosed 8-316112 patent gazettes " semiconductor wafer of additional cut "
The 2002-356398 patent gazette " gallium nitride wafer " that [patent documentation 6] Japan announced in 2002
The 2002-008130 patent gazette " labeling method of gallium nitride wafer and gallium nitride wafer " that [patent documentation 7] Japan announced in 2002
Summary of the invention
The GaN monocrystal chip is transparent, and present situation is, because the inside is a matsurface, so the surface is that minute surface is with the naked eye in the differentiation table.So but when doing like this because the inside is that matsurface has produced problem.So adhere to particle easily because the inside is a matsurface.These particles shift and the surface that entered surface contamination from the teeth outwards.And because the surface roughness on the inside and surface is very different so flatness worsens and to bend.Because error crooked and the generation etching, the rate of finished products of goods has also worsened.Further also there is the situation that the crack takes place from the inside.Also exist again when the inside and fin and shell are bonding owing to be that the matsurface heat conductivity worsens the inadequate situation of heat radiation.
Therefore, it is also more level and smooth near minute surface that we wish to make the inside.If do like this, then also can reduce particle adhering to inside.Heat conduction has also improved when making the inside be bonded on the fin, and crooked problem also is improved.But when the inside during also near minute surface since the surface roughness in the table near with the naked eye distinguishing in the table.So, need replacement according in the difference difference table of surface roughness so far in the new method of the recognition methods of using.
The 1st purpose of the present invention provides and makes also more smoothing and in can the difference table and the monocrystalline nitride semiconductor substrate that identifies in the table is set of the inside.The 2nd purpose of the present invention provides and do not make the inside become the monocrystalline nitride semiconductor substrate that the matsurface particle is difficult to adhere to.The 3rd purpose of the present invention provides and do not make the inside become the monocrystalline nitride semiconductor substrate that matsurface reduces bending.The 4th purpose of the present invention provides and do not make the inside become the heat conducting monocrystalline nitride semiconductor substrate that matsurface improves the inside.
Rectangular nitride semiconductor substrate of the present invention is provided with in 2 bights by the clockwise tactic excision breach of length rotatably in order to distinguish in the table, an excision breach of 5 °～40 ° of angulations perhaps is set in a bight, perhaps make a surperficial side different, perhaps by writing in the literal difference table with the face removal amount of the inside one side.Below, we roughly illustrate the situation of the GaN rectangle wafer as nitride semiconductor substrate of the present invention.
1. it is to hold (0001) face, with (11-20) face and (1-100) face as the GaN rectangle wafer of side, (11-20) face as datum level, is rotated sequence arrangement long excision breach L, short excision breach S by clockwise in the both sides of the opposite side of datum level long excision breach L and short excision breach S (Fig. 1) are set like that when making the surface towards the place ahead.Make that four limit total lengths are K, the length of long excision breach, short excision breach is that K/40≤L≤K/12, K/40≤S≤K/16 is suitable.
2. it is to hold (0001) face, with (11-20) face and (1-100) face as the GaN rectangle wafer of side, (1-100) face as datum level, is rotated sequence arrangement long excision breach L, short excision breach S by clockwise in the both sides of the opposite side of datum level long excision breach L and short excision breach S (Fig. 2) are set like that when making the surface towards the place ahead.Make that four limit total lengths are K, the length of long excision breach, short excision breach is that K/40≤L≤K/12, K/40S≤K/16 are suitable.
3. it is to hold (0001) face, with (11-20) face and (1-100) face as the GaN rectangle wafer of side, with (11-20) face as datum level, when the opposite side that makes datum level in the above, the surface is provided with the excision breach with non-datum level angulation Θ (5 °＜Θ＜40 °) during towards the place ahead in the left side of opposite side, when the surface makes the excision barbed portion become long and short be provided with like that (Fig. 3) by the clockwise rotation during towards the place ahead in proper order.
4. it is to hold (0001) face, with (11-20) face and (1-100) face as the GaN rectangle wafer of side, with (1-100) face as datum level, when the opposite side that makes datum level in the above, the surface is during towards the place ahead, excision breach with non-datum level angulation Θ (5 °＜Θ＜40 °) is set, when the surface makes the excision barbed portion become long and short be provided with like that (Fig. 4) by the clockwise rotation during towards the place ahead in proper order in the left side of opposite side.
5. it is to hold (0001) face, and face is as the GaN rectangle wafer of side with (11-20) face with (1-100), and the face that the edge on surface is lacked is removed (g), and the face that the edge of the inside is grown is removed (h) (Fig. 5).Best g＜h.The scope that is fit to is as follows.It is about g=100 μ m～400 μ m that short face is removed width.It is about h=300 μ m～1000 μ m (Fig. 5) that long face is removed width.
6. it is to hold (0001) face, and face is as the GaN rectangle wafer of side with (11-20) face with (1-100), and the flexure plane that the edge on surface is lacked is removed (g), and the flexure plane face that the edge of the inside is grown is removed (h) (Fig. 6).Best g＜h.The scope that is fit to is as follows.It is about g=100 μ m～｀ 400 μ m that short face is removed width.It is about h=300 μ m～1000 μ m (Fig. 6) that long face is removed width.
The face removal method of above-mentioned Fig. 5, Fig. 6 is to carry out wet lapping with the rotating disk one side of the 500mm φ of the fixedly sand grains of having GC#600～#800 with the speed rotation one side of 100rpm to be implemented with the loading of about 300gf.
7. it is to hold (0001) face, and face is as the GaN rectangle wafer of side with (11-20) face with (1-100), and in a surperficial side, edge [1-100] direction is carried out laser labelling abreast with (11-20) face and write literal (Fig. 7) in positive direction.
8. it is to hold (0001) face, and face is as the GaN rectangle wafer of side with (11-20) face with (1-100), and inside a side along [1-100] direction, is carried out laser labelling abreast with (11-20) face and write literal (Fig. 8) in positive direction.
9. it is to hold (0001) face, and face is as the GaN rectangle wafer of side with (11-20) face with (1-100), and inside a side along [1-100] direction, is carried out laser labelling abreast with (11-20) face and write literal (Fig. 9) in the other direction.
10. it is to hold (0001) face, and face is as the GaN rectangle wafer of side with (11-20) face with (1-100), and in a surperficial side, edge [11-20] direction is carried out laser labelling abreast with (1-100) face and write literal (Figure 10) in positive direction.
11. it is to hold (0001) face, face is as the GaN rectangle wafer of side with (11-20) face with (1-100), and inside a side along [11-20] direction, is carried out laser labelling abreast with (1-100) face and write literal (Figure 11) in positive direction.
12. it is to hold (0001) face, face is as the GaN rectangle wafer of side with (11-20) face with (1-100), and inside a side along [11-20] direction, is carried out laser labelling abreast with (1-100) face and write literal (Figure 12) in the other direction.
The present invention not only removes the degree of depth in the bight with 2 or 1 excision breach but also change face for the table the inside of distinguishing rectangle GaN substrate, writes literal.Therefore, can distinguish surface and the inside.Prior art sees in the differentiation table with eyes with matsurface, minute surface, but just not quite distinguishes the different of matsurface and minute surface easily in the situation of transparent GaN substrate.Method of the present invention with according to the diverse ways of roughness relatively, with the naked eye just can easily distinguish in the table.Again, it also can similarly be applicable to the nitride semiconductor substrate of AlGaN, AlN, InN etc.
Can not make the inside roughening in the table in order to distinguish again.Because the inside is processed near minute surface, adhere to so reduced the particle of the inside.Because it is matsurface that the inside is adhered to a reason of particle easily.So because processing processing the inside and surperficial operation do not have the big different bending that reduced.Crooked reason also is because the difference of face processing, processing face to face do not have big not simultaneously, also can reduce bending.Uneven the becoming of having reduced the inside is more suitable in photo-mask process.
We measure surface particle number, bending (TTV), the comparison of gash fracture incidence making the GaN wafer of the inside roughening and making the GaN wafer of the inside mirror-polishing according to the present invention with emery wheel shown in existent method.The result is shown in Figure 13,14,15.We see makes the present invention of the inside mirror-polishing can reduce surface particle, can either reduce bending, can reduce the gash fracture incidence again.
Description of drawings
Fig. 1 is and be to hold (0001) face, with (11-20) face, (1-100) face GaN rectangle wafer as side, (11-20) face as datum level, is rotated plane graph that sequence arrangement long excision breach L, short excision breach S like that be provided with the example 1 of long excision breach L and short excision breach S relevant GaN wafer by clockwise in the both sides of the opposite side of datum level when making the surface towards the place ahead.
Fig. 2 is and be to hold (0001) face, with (11-20) face, (1-100) face GaN rectangle wafer as side, (1-100) face as datum level, is rotated plane graph that sequence arrangement long excision breach L, short excision breach S like that be provided with the example 2 of long excision breach L and short excision breach S relevant GaN wafer by clockwise in the both sides of the opposite side of datum level when making the surface towards the place ahead.
Fig. 3 is and be to hold (0001) face, with (11-20) face and (1-100) face as the GaN rectangle wafer of side, with (11-20) face as datum level, when the opposite side that makes datum level in the above, the surface is during towards the place ahead, for the plane graph of the relevant GaN wafer of the example 3 that the excision breach is set in the left side of opposite side with non-datum level angulation Θ (5 °＜Θ＜40 °).
Fig. 4 is and be to hold (0001) face, with (11-20) face and (1-100) face as the GaN rectangle wafer of side, with (1-100) face as datum level, when the opposite side that makes datum level in the above, the surface is during towards the place ahead, for the plane graph of the relevant GaN wafer of the example 4 that the excision breach is set in the left side of opposite side with non-datum level angulation Θ (5 °＜Θ＜40 °).
Fig. 5 is and be to hold (0001) face, with (11-20) face and (1-100) face as the GaN rectangle wafer of side, in order can to compare face that a surperficial side carries out to remove g big by making face that the inside one side is carried out remove h, the plane graph of the GaN wafer that example in the difference table 5 is relevant.
Fig. 6 is and be to hold (0001) face, with (11-20) face and (1-100) face as the GaN rectangle wafer of side, in order can to compare flexure plane that a surperficial side carries out to remove g big by making flexure plane that the inside one side is carried out remove h, the plane graph of the GaN wafer that example in the difference table 6 is relevant.
Fig. 7 is that it is to hold (0001) face, with (11-20) face and (1-100) face as the rectangle wafer of side, in a surperficial side,, carry out laser labelling writes the rectangle GaN wafer of literal in positive direction plane graph abreast with (11-20) face along [1-100] direction.
Fig. 8 is that it is to hold (0001) face, with (11-20) face and (1-100) face as the rectangle wafer of side, inside a side along [1-100] direction, is carried out laser labelling writes the rectangle GaN wafer of literal in positive direction plane graph abreast with (11-20) face.
Fig. 9 is that it is to hold (0001) face, with (11-20) face and (1-100) face as the rectangle wafer of side, inside a side along [1-100] direction, is carried out laser labelling writes the rectangle GaN wafer of literal in the other direction plane graph abreast with (11-20) face.
Figure 10 is that it is to hold (0001) face, with (11-20) face and (1-100) face as the rectangle wafer of side, in a surperficial side,, carry out laser labelling writes the rectangle GaN wafer of literal in positive direction plane graph abreast with (1-100) face along [11-20] direction.
Figure 11 is that it is to hold (0001) face, with (11-20) face and (1-100) face as the rectangle wafer of side, inside a side along [11-20] direction, is carried out laser labelling writes the rectangle GaN wafer of literal in positive direction plane graph abreast with (1-100) face.
Figure 12 is that it is to hold (0001) face, with (11-20) face and (1-100) face as the rectangle wafer of side, inside a side along [11-20] direction, is carried out laser labelling writes the rectangle GaN wafer of literal in the other direction plane graph abreast with (1-100) face.
Figure 13 measures surface particle to count the curve chart that comparison makes the GaN wafer of the inside roughening according to existing method with emery wheel and makes the GaN wafer of the inside mirror-polishing according to the present invention.
Figure 14 measures the curve chart that crooked (TTV) relatively makes the GaN wafer of the inside roughening according to existing method with emery wheel and make the GaN wafer of the inside mirror-polishing according to the present invention.
Figure 15 measures the curve chart that the comparison of gash fracture incidence makes the GaN wafer of the inside roughening according to existing method with emery wheel and makes the GaN wafer of the inside mirror-polishing according to the present invention.
Wherein:
A---(1100) limit
B---(1-120) limit
C---(1-100) limit
D---(11-20) limit
L---long excision breach
S---short excision breach
Θ---the angle that excision breach and non-datum level form
---the bight that limit d, limit a form
---the bight that limit a, limit b form
---the bight that limit b, limit c form
---the bight that limit c, limit d form
The face of g---a surperficial side is removed
The face of h---the inside one side is removed
Embodiment
The present invention is surperficial with (0001) face (C face) conduct, (11-20) face (A face) and (1-100) on the rectangle GaN wafer of face (M face) as four limits is provided with in 2 continuous bights and makes the surface rotate the excision breach of sequence arrangement length by clockwise towards the place ahead.
The inclination angle perhaps is set is 5 °～40 ° excision breach in a bight, whether they are by seeing that the excision breach in 2 bights or the excision breach difference in 1 bight are surface or the inside.Perhaps change face removal amount g, h in a surperficial side and the inside one side.If can see face removes then can know in the table immediately.
Perhaps on the GaN substrate, write literal.To on substrate, write literal and be called mark.Can on the GaN substrate, write literal by enough high power lasers.So because the GaN substrate is transparently can either also can see from the inside from the surface.When carrying out mark, using carbon dioxide gas volumetric laser (wavelength is 10.6 μ m) is that 15～20mJ shines with the laser power of each pulse, and diameter is the round dot of 100～140 μ m φ in the printing.
Can write literal in positive direction from the teeth outwards.What can see upright literal is the surface.Also can differentiate by having the laser processing hole from the teeth outwards.
Can inside go up and write literal in positive direction.What can see literal in the other direction is the surface.Also the face that does not have the laser processing hole can be judged to be the inside.
Also can inside go up in opposite direction and write literal (anti-literal).What can see upright literal is the surface.We illustrate each situation now.Also all be to hold (0001) face in which kind of situation, with (11-20) face and (1-100) face as the GaN rectangle wafer of side.
With (11-20) face as datum level, when making the surface, rotate the long excision breach L of sequence arrangement, short excision breach S in the both sides of the opposite side of datum level long excision breach L and short excision breach S (Fig. 1) be set like that by clockwise towards the place ahead.Make that four limit total lengths are K, the length of long excision breach, short excision breach is that K/40≤L≤K/12, K/40S≤K/16 are suitable.
The face in the expression orientation that so-called " datum level " refers to.On with the GaN wafer of (0001) face, have mutually orthogonal a (1100), b (1-120), 4 limits of c (1-100), d (11-20) as the surface.Further, have 4 bights.They are the bight that forms of bight, a limit, limit, b that d limit, limit a forms, the bight that limit b, limit c form, the bight that limit c, limit d form.
Here with d (11-20) as true edge.Opposite side is (1-120).Bight ロ, Ha to the opposite side both sides excise.ロ is that long excision breach, Ha are short excision breach.Because watch, press the excision breach S that clockwise rotates the long excision breach L of sequence arrangement, weak point, so we know that it is the surface from the surface.Because watch from the inside, ロ, Ha reverse about being, press the excision breach L that clockwise rotates the short excision breach S of sequence arrangement, length, so we know that it is the inside.
With (1-100) face as datum level, when making the surface, rotate the long excision breach L of sequence arrangement, short excision breach S in the both sides of the opposite side of datum level long excision breach L and short excision breach S (Fig. 2) be set like that by clockwise towards the place ahead.Make that four limit total lengths are K, the length of long excision breach, short excision breach is that K/40≤L≤K/12, K/40≤S≤K/16 is suitable.
Because it as datum level, so opposite side is a (1100), excises c (1-100) to its bight, left and right sides イ, ロ, form long excision breach L, short excision breach S.
With (11-20) face as datum level, when the opposite side that makes datum level in the above, the surface is during towards the place ahead, excision breach with non-datum level angulation Θ (5 °＜Θ＜40 °) is set, when the surface makes the excision barbed portion become long and short be provided with like that (Fig. 3) by the clockwise rotation during towards the place ahead in proper order in the left side of opposite side.
Because it with d (11-20) as datum level, so opposite side be b (1-120), at its left side mouth, formation and non-datum level a (1100) angulation Θ are 5 °～40 ° excision breach, when the length of excision breach when being ケ ロ, ロ Off when the surface is watched, press clockwise and rotate sequence arrangement length and excise breach.
With (1-100) face as datum level, when the opposite side that makes datum level in the above, the surface is during towards the place ahead, excision breach with non-datum level angulation Θ (5 °＜Θ＜40 °) is set, when the surface makes the excision barbed portion become long and short be provided with like that (Fig. 4) by the clockwise rotation during towards the place ahead in proper order in the left side of opposite side.
Because it with c (1-100) as datum level, so opposite side is b (1100), at its left side イ, formation and non-datum level d (11-20) angulation Θ are 5 °～40 ° excision breach, when the length of excision breach when being エ イ, イ テ when the surface is watched, press clockwise and rotate sequence arrangement length and excise breach.
5. the face that the edge on surface is lacked is removed (g), and the face that the edge of the inside is grown is removed (h) (Fig. 5).Best g＜h.The scope that is fit to is as follows.It is about g=100 μ m～400 μ m that short face is removed width.It is about h=300 μ m～1000 μ m (Fig. 5) that long face is removed width.
This is the situation in representing with the length that the face on limit is removed.Can irrespectively define with datum level.For circular Si wafer several schemes have been proposed.In the rectangle gallium nitride beyond example.Both can on whole 4 limits of rectangle, carry out asymmetric removal, also can be only on certain 1 or 2 limits, carry out asymmetric removal.
6. the flexure plane that the edge on surface is lacked is removed (g), and the flexure plane that the edge of the inside is grown is removed (h) (Fig. 6).Best g＜h.The scope that is fit to is as follows.It is about g=100 μ m～400 μ m that short face is removed width.It is about h=300 μ m～1000 μ rm (Fig. 6) that long face is removed width.
This makes, and the face removal is broken and the crack becomes very difficult owing to carrying out agley.
7. in a surperficial side,, carry out laser labelling abreast with (11-20) face and write literal (Fig. 7) in positive direction along [1-100] direction.
Because gallium nitride is transparent for visible light, can not punch so be used in the YAG laser (1.06 μ m) that often uses in the laser labelling.Even if the 2nd high frequency waves (530nm) of YAG can not punch less because absorb.As described in above-mentioned patent documentation 7, can use the laser (for example the 3rd high frequency waves of YAG) of the following wavelength of 400nm and the laser (carbon dioxide lasers of 10.6 μ m for example) of the above wavelength of 5000nm.
Because go into literal at surperficial sidelights on, thus can correctly see literal be the surface, turn over just can see be the inside.
So-called (11-20) face is along limit イ two and normal and ロ イ, the parallel face of Ha イ.Represent that with (hkmn) other face, usefulness [hkmn] represents other direction, but other direction [hkmn] is defined as the outside normal direction of other face (hkmn).Face Ha イ is other face (1-100), and the limit イ two vertical with it is other direction [1-100].Promptly [1-100] direction is parallel with (11-20) face.Top literal means same orientation.
Further, distinguish in the table because reverse about whether, so it is asymmetrical the left and right sides should to be charged in literal by literal.
8. a side inside along [1-100] direction, is carried out laser labelling abreast with (11-20) face and is write literal (Fig. 8) in positive direction.
Here because inside sidelights on go into literal, so can correctly see literal be the inside, turn over just can see be the surface.
9. a side inside along [1-100] direction, is carried out laser labelling abreast with (11-20) face and is write literal (Fig. 9) in the other direction.
Here because inside sidelights on go into the opposite literal of left and right directions, so can correctly see literal be the surface, turn over just can see be the inside.
10. in a surperficial side,, carry out laser labelling abreast with (1-100) face and write literal (Figure 10) in positive direction along [11-20] direction.
Because go into literal at surperficial sidelights on, thus can correctly see literal be the surface, turn over just can see be the inside.
11. inside a side along [11-20] direction, is carried out laser labelling abreast with (1-100) face and is write literal (Figure 11) in positive direction.
Here because inside sidelights on go into literal, so can correctly see literal be the inside, turn over just can see be the surface.
12. inside a side along [11-20] direction, is carried out laser labelling abreast with (1-100) face and is write literal (Figure 12) in the other direction.
Here because inside sidelights on go into the opposite literal of left and right directions, so can correctly see literal be the surface, turn over just can see be the inside.
Claims (2)
1. the rectangular nitride semiconductor substrate in can Identification Lists, it is characterized in that: it be hold (0001) surface and will (11-20) face with (1-100) face as the rectangle of side, with (11-20) face as datum level, on the left summit of a surperficial side at the opposite side of datum level, adhering to non-datum level angulation Θ=5～40 degree and length is 1/40～1/16 the excision breach of full girth K.
2. the rectangular nitride semiconductor substrate in can Identification Lists, it is characterized in that: it be hold (0001) surface and will (11-20) face with (1-100) face as the rectangle of side, with (1-100) face as datum level, on the left summit of a surperficial side at the opposite side of datum level, adhering to non-datum level angulation Θ=5～40 degree and length is 1/40～1/16 the excision breach of full girth K.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003089935 | 2003-03-28 | ||
| JP200389935 | 2003-03-28 | ||
| JP2003275934 | 2003-07-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB200410002205XA Division CN1324660C (en) | 2003-03-28 | 2004-01-15 | Rectangular nitride semiconductor substrate capable of identifying outside and inside |
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| Publication Number | Publication Date |
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| CN1832162A CN1832162A (en) | 2006-09-13 |
| CN100511668C true CN100511668C (en) | 2009-07-08 |
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