CN100495754C - Electronic device and method of making same - Google Patents
Electronic device and method of making same Download PDFInfo
- Publication number
- CN100495754C CN100495754C CN 200610058368 CN200610058368A CN100495754C CN 100495754 C CN100495754 C CN 100495754C CN 200610058368 CN200610058368 CN 200610058368 CN 200610058368 A CN200610058368 A CN 200610058368A CN 100495754 C CN100495754 C CN 100495754C
- Authority
- CN
- China
- Prior art keywords
- film
- substrate
- electronic equipment
- laminate
- outer rim
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Micromachines (AREA)
Abstract
The present invention provides an electronic device with improved characteristics and a method of making the electronic device. In a method of making an electronic device (piezoelectric device) 74 according to the present invention, an outer edge R 1 of a piezoelectric film 52 A formed on an electrode film 46 A of a laminate 60 is located inside an outer edge R 2 of the electrode film 46 A. For this reason, in removal of a monocrystalline Si substrate 14 from a multilayer board 61 , where an etching solution permeates between polyimide 72 and laminate 60 , the etching solution circumvents the electrode film 46 A before it reaches the piezoelectric film 52 A. Namely, a route A of the etching solution to the piezoelectric film 52 A is significantly extended by the electrode film 46 A. In the method of making the electronic device 74 , therefore, the etching solution is less likely to reach the piezoelectric film 52 A. It significantly suppresses a situation of dissolution of the piezoelectric film 52 A and realizes improvement in characteristics of the piezoelectric device 74 made.
Description
Technical field
The present invention relates to have the electronic equipment and the manufacture method thereof of laminated structure.
Background technology
In the prior art, for example in TOHKEMY 2003-229611 communique etc., disclose the film piezoelectric element that has as one of electronic equipment in this technical field.When the film piezoelectric element of making described in this communique, at first, prepare two silicon substrates, form the MgO film of preferred orientation on the surface of each silicon substrate, on (200) face.Then, be formed with on each silicon substrate of this MgO film, lamination first electrode film, piezoelectric body film, second electrode film are made two laminated substrates in turn.And, the electrode film that makes these laminated substrates toward each other and undertaken bondingly by bonding agent, at first an only side silicon substrate is removed in etching.Then, be configured as the component shape of regulation, and behind resinous coat, the opposing party's silicon substrate carried out etching remove, finish the making of above-mentioned film piezoelectric element by dry-etching etc.Wherein, in TOHKEMY 2002-164586 communique, TOHKEMY 2001-313429 communique, Japanese kokai publication hei 11-312801 communique, No. 3310881 communiques of TOHKEMY etc., relevant record is arranged also.
But, in the electronic equipment of above-mentioned prior art, have following problems.That is, remove in the operation of second substrate in etching, etching solution might be from the bonding part immersion of the laminate that is made of coating resin (diaphragm) and electrode film or piezoelectric body film.Be immersed at this etching solution under the situation of piezoelectric body film, the piezoelectric body film dissolving, the characteristic of the piezoelectric element of making significantly descends.And, be accompanied by degradation problem under the decrease in yield that also can produce electronic equipment and the productivity.
Summary of the invention
The present invention proposes in view of the above problems, and its purpose is to provide a kind of electronic equipment and manufacture method thereof that can improve characteristic.
The manufacture method of electronic equipment of the present invention is characterised in that: be to use etching solution, from form the laminated substrate of the laminate that become electronic equipment at substrate, the manufacture method of the electronic equipment that substrate is removed, comprise: on substrate, form and comprise the first film, and on the first film, form, than the step of the laminate of easier second film that is dissolved in etching solution of the first film; Form the step of the diaphragm that covers laminate; And the use etching solution, the step with substrate is removed from laminated substrate wherein, when the film forming laminate, forms second film, makes the outer rim of at least a portion of the outer rim of second film and the first film be in a ratio of the inboard.
In the manufacture method of this electronic equipment, the outer rim of second film that forms on the first film of laminate is in a ratio of the inboard with the outer rim of at least a portion of the first film.Therefore; during from laminated substrate removal substrate; under etching solution immerses situation between diaphragm and the laminated film, be positioned at the peripheral edge portion of inboard of the outer rim of the first film in the outer rim of second film, etching solution will travel back across the first film before arriving second film.In other words, the etching solution path that arrives second film can prolong wittingly because of the first film.Here, in the manufacture method of the electronic equipment of prior art, owing to unanimous on the whole making of outer rim that is the first film and second film, thus the just circuitous the first film of etching solution, but directly arrive second film.So, in the manufacture method of electronic equipment of the present invention,, can make etching solution be difficult to arrive second film by prolonging the path that etching solution arrives second film.Thus, can suppress the dissolving of second film wittingly, the raising of the performance of the electronic equipment that realization is made.And, by avoiding the dissolving of second film, can also improve the rate of finished products and the productivity of this electronic equipment.Wherein, in film forming of the present invention, not only be included in accumulating film material on the substrate of regulation and form the processing of film, and comprise and form the processing that this film is formed after the film (patterning).
The manufacture method of electronic equipment of the present invention is characterised in that: be to use the grinding agent that comprises liquid, from form the laminated substrate of the laminate that become electronic equipment at substrate, the manufacture method of the electronic equipment that substrate is removed, comprise: on substrate, form and comprise the first film, and on the first film, form, than the step of the laminate of easier second film that is dissolved in grinding agent of the first film; Form the step of the diaphragm that covers laminate; And the use grinding agent, the step that substrate is removed from laminated substrate, wherein, when the film forming laminate, second film that is shaped makes the outer rim of at least a portion of the outer rim of second film and the first film be in a ratio of the inboard.
In the manufacture method of this electronic equipment, the outer rim of second film that forms on the first film of laminate is in a ratio of the inboard with the outer rim of at least a portion of described the first film.Therefore; from laminated substrate removal substrate the time; under grinding agent immerses situation between diaphragm and the laminated film, be positioned at the peripheral edge portion of inboard of the outer rim of the first film in the outer rim of second film, the grinding agent the first film that before arriving second film, will make a circulation.In other words, the grinding agent path that arrives second film can prolong wittingly because of the first film.Here, in the manufacture method of the electronic equipment of prior art, owing to unanimous on the whole making of outer rim that is the first film and second film, thus the circuitous the first film of grinding agent, but directly arrive second film.So, in the manufacture method of electronic equipment of the present invention, arrive the path of second film by prolonging grinding agent, and can make grinding agent be difficult to arrive second film.Thus, can suppress the dissolving of second film wittingly, the raising of the performance of the electronic equipment that realization is made.And, by avoiding the dissolving of second film, can also improve the rate of finished products and the productivity of this electronic equipment.
In addition, preferably when the described laminate of film forming, form described second film, make the outer rim of second film and whole outer rim of the first film be in a ratio of the inboard.In this case, owing to the whole peripheral edge portions at second film, the circuitous the first film of etching solution or grinding agent meeting before arriving second film is so second film of electronic equipment just more is difficult to dissolve.
And preferred laminate is included in the laminated structure that has piezoelectric body film between the pair of electrodes film, and the first film is a side a electrode film, and second film is a piezoelectric body film.And, preferred laminate is included in the laminated structure that has piezoelectric body film between the pair of electrodes film, and be included in the oxidation film that exists between the electrode film of the side near apart from substrate in the pair of electrodes film and the substrate, the first film is an oxidation film, and second film is a piezoelectric body film.In these cases, can suppress the dissolving of the etched liquid of piezoelectrics of second film wittingly, obtain the piezoelectric device of piezoelectric property excellence.
And, when forming diaphragm, be diaphragm to be divided into repeatedly form preferably.In this case, owing in the formation of for the second time later diaphragm, can adjust the size of diaphragm, perhaps change the material of diaphragm, so can realize the variation of diaphragm.
Electronic equipment of the present invention is characterised in that: be to use etching solution; from form the laminated substrate of the laminate that become electronic equipment at substrate; the electronic equipment that the substrate removal is obtained; it is characterized in that: a side's of laminate face and side are covered by diaphragm; the opposing party's face exposes from diaphragm; and comprise the first film; and be positioned at a side's of the first film face, than easier second film that is dissolved in etching solution of the first film, the outer rim of the outer rim of second film and at least a portion of the first film is in a ratio of the inboard.
In this electronic equipment, be positioned at a side the outer rim of second film of face of the first film of laminate, be in a ratio of the inboard with the outer rim of at least a portion of the first film.Therefore, when laminated substrate is removed substrate, under etching solution immerses situation between diaphragm and the laminated film, be positioned at the peripheral edge portion of inboard of the outer rim of the first film in the outer rim of second film, etching solution can circuitous the first film before arriving second film.In other words, the etching solution path that arrives second film can prolong wittingly because of the first film.Here, in the manufacture method of the electronic equipment of prior art, owing to unanimous on the whole making of outer rim that is the first film and second film, the first film so etching solution can not make a circulation, but directly arrive second film.So, in the manufacture method of electronic equipment of the present invention, arrive the path of second film by prolonging etching solution, and can access the structure that makes etching solution be difficult to arrive second film.Thus, can suppress the dissolving of second film wittingly, the electronic equipment that obtains having excellent specific property.And, by avoiding the dissolving of second film, can also improve the rate of finished products and the productivity of this electronic equipment.
Electronic equipment of the present invention is characterised in that: be to use the grinding agent that comprises liquid, from forming the laminated substrate of the laminate that become electronic equipment at substrate, the electronic equipment that described substrate removal is obtained.One side's of laminate face and side are covered by diaphragm; the opposing party's face exposes from diaphragm; and comprise the first film; and be positioned at a described side's of described the first film face one side, than easier second film that is dissolved in grinding agent of the first film, the outer rim of the outer rim of second film and at least a portion of the first film is in a ratio of the inboard.
In this electronic equipment, be positioned at a side the outer rim of second film of face of the first film of laminate, be in a ratio of the inboard with the outer rim of at least a portion of the first film.Therefore, when laminated substrate is removed substrate, under grinding agent immerses situation between diaphragm and the laminated film, be positioned at the peripheral edge portion of inboard of the outer rim of the first film in the outer rim of second film, grinding agent can circuitous the first film before arriving second film.In other words, the grinding agent path that arrives second film can prolong wittingly because of the first film.Here, in the manufacture method of the electronic equipment of prior art, owing to unanimous on the whole making of outer rim that is the first film and second film, the first film so grinding agent just can not make a circulation, but directly arrive second film.So, in the manufacture method of electronic equipment of the present invention, arrive the path of second film by prolonging grinding agent, and can access the structure that makes grinding agent be difficult to arrive second film.Thus, can suppress the dissolving of second film wittingly, the electronic equipment that obtains having excellent specific property.And, by avoiding the dissolving of second film, can also improve the rate of finished products and the productivity of this electronic equipment.
And whole outer rim of the outer rim of preferred second film and the first film is in a ratio of the inboard.In this case, because at whole peripheral edge portions of second film, etching solution or the grinding agent the first film that will make a circulation before arriving second film is so second film of electronic equipment just more is difficult to dissolving.
And preferred laminate is included in the laminated structure that has piezoelectric body film between the pair of electrodes film, and the first film is a side a electrode film, and second film is a piezoelectric body film.And, preferred laminate is included in the laminated structure that has piezoelectric body film between the pair of electrodes film, and be included in a pair of electrode film apart from the oxidation film that exists between the electrode film of the near side of substrate and the substrate, the first film is an oxidation film, and second film is a piezoelectric body film.In these cases, can suppress the dissolving of the etched liquid of piezoelectrics of second film intentionally, obtain the piezoelectric device of piezoelectric property excellence.
And preferred diaphragm is made of multilayer resist.In this case, owing to can easily change the size and the constituent material of diaphragm, so can realize the variation of diaphragm.
Description of drawings
Fig. 1 is the summary construction diagram that employed film producing device in the piezoelectric device of embodiment of the present invention is made in expression.
Fig. 2 is the figure that the piezoelectric device preliminary stage in proper order of first embodiment of the invention is made in expression.
Fig. 3 is the figure that the piezoelectric device later stage in proper order of first embodiment of the invention is made in expression.
Fig. 4 is the enlarged drawing of major part of the piezoelectric device of first embodiment of the invention.
Fig. 5 is the figure of the multi-form piezoelectric device of expression and Fig. 4.
Fig. 6 is the figure that the piezoelectric device later stage in proper order of second embodiment of the invention is made in expression.
Fig. 7 is the enlarged drawing of major part of the piezoelectric device of second embodiment of the invention.
Fig. 8 is the figure of the multi-form piezoelectric device of expression and Fig. 7.
Embodiment
Below, be elaborated with reference to the execution mode of accompanying drawing to electronic equipment of the present invention and manufacture method thereof.Wherein, the symbol identical to same or equal element annotation, and under the situation that explanation repeats, omit its explanation.
In embodiments of the present invention, be that example describes with piezoelectric device as one of electronic equipment.
(first execution mode)
At first, with reference to Fig. 1, employed manufacturing installation (precipitation equipment) in the making of this piezoelectric device is described.
As shown in Figure 1, precipitation equipment 10 has vacuum tank 12, by exhaust apparatus 12a this vacuum tank 12 is evacuated.Bottom in vacuum tank 12 disposes the fixture 16 that keeps monocrystalline silicon substrate 14.This fixture 16 is connected in motor 20 by rotating shaft 18, by the rotation of this motor 20 described monocrystalline silicon substrate 14 is rotated in its real estate.In addition, in described fixture 16, be built-in with the heater 22 that monocrystalline silicon substrate 14 is heated.
Below fixture 16, dispose Zr evaporation part 24, Y evaporation part 26, Pt evaporation part 28, Pb evaporation part 30, Ti evaporation part 32 and La evaporation part 34.On these evaporation parts 24,26,28,30,32,34, except configuration source metal separately, also dispose the power supply (electron ray generating means, resistive heating device etc.) that is used for using energy to source metal supply evaporation.
In addition, between evaporation part 24,26,28,30,32,34 and fixture 16, be provided with the RF antenna 36 of ring-type, emit path (route) with what surround 24,26,28,30,32,34 deposition materials of emitting from the evaporation part.In addition, precipitation equipment 10 is provided with the gas supply device 38 of supplying with oxidizing gas, and the supply port 38a of this gas supply device 38 is right after the below of described fixture 16 and disposes.Therefore, near oxidizing gas its dividing potential drop monocrystalline silicon substrate 14 uprises.By the co-operating of these RF antennas 36, and can produce the environment of oxidation plasma, realize that thus high-precision film forming handles with gas supply device 38.Wherein, as employed oxidizing gas in this film forming processing, oxygen, the NO of oxygen, ozone, state of atom for example arranged
2Deng.
Then, with reference to Fig. 2 and Fig. 3, the order of using above-mentioned precipitation equipment 10 to make the piezoelectric device of first execution mode is described.
At first, so that the downward mode of the substrate surface 14a that show out (100) monocrystalline silicon substrate 14 is arranged on the fixture 16 of precipitation equipment 10.Here, preferably use the wafer of mirror finish that substrate surface 14a is carried out the etching cleaning.This etching is cleaned to wait by 40% ammonium fluoride aqueous solution and is realized.In addition, because the monocrystalline silicon substrate 14 after cleaning is reactive high,, be not subjected to assortment again and pollution to protect it so preferably implement the surface treatment of regulation.
Then, on the substrate surface 14a of monocrystalline silicon substrate 14, epitaxial growth thickness is the ZrO of 0.01 μ m in turn
2Film 40A and thickness are the Y of 0.04 μ m
2O
3Film 42A and form oxidation film 44A (with reference to (a) part of Fig. 2).Here, ZrO
2 Film 40A is by zirconium dioxide (ZrO
2) epitaxial film that constitutes, Y
2O
3Film 42A is by yttria (Y
2O
3) epitaxial film that constitutes.More particularly, obtaining under the environment of oxidation plasma with the co-operating of gas supply device 38 by above-mentioned RF antenna 36, to the surperficial 14a that is heated to the monocrystalline silicon substrate 14 more than 400 ℃, supply with Zr, supply with Y by Zr evaporation part 24, and form ZrO by Y evaporation part 26
2 Film 40A and Y
2O
3Film 42A.Like this, the ZrO of epitaxial growth
2The growth face of film 40A becomes (001) face, the Y of epitaxial growth
2O
3The growth face of film 42A becomes (100) face.
Wherein, be 10cm in substrate area
2More than, for example be under the situation of film forming on 2 inches the bigger monocrystalline silicon substrate area at diameter, by by motor 20 rotation monocrystalline silicon substrates 14, and can supply with higher partial pressure of oxygen on the whole surface of substrate, can make large-area film.At this moment, the rotary speed of preferable substrate is more than the 10rpm.This is because if rotating speed is low, then can form the distribution of thickness in substrate.The rotary speed of this substrate does not have the special upper limit, usually in vacuum plant mechanism about 120rpm.
Then, epitaxial growth thickness is electrode film (the first film) 46A (with reference to (b) part of Fig. 2) of 0.2 μ m on oxidation film 44A.More particularly, under above-mentioned oxygen plasma environment, above monocrystalline silicon substrate 14, supply with Pt, form the electrode film 46A that constitutes by Pt by Pt evaporation part 28.Epitaxially grown like this electrode film 46A is＜100〉be orientated on the direction.
And on electrode film 46A, epitaxial growth thickness is the PLT film 48A of 0.02 μ m and the PZT film 50A that thickness is 2.5 μ m in turn, forms piezoelectric body film (second film) 52A.Here, PLT film 48A is the epitaxial film that is made of the lead titanates that mixes up La (PLT), and PZT film 50A is the epitaxial film that is made of lead zirconate titanate (PZT).More particularly, under above-mentioned oxygen plasma environment, above monocrystalline silicon substrate 14, supply with Ti, supply with Pb, supply with La, supply with Zr by Ti evaporation part 32 selectively by Zr evaporation part 24 by La evaporation part 34 by Pb evaporation part 30, form PLT film 48A and PZT film 50A.These PLT film 48A and PZT film 50A, its growth direction (thickness direction) be＜001〉direction, and the c face is single-orientated.That is, this piezoelectric body film 52A becomes perovskite (ペ ロ Block ス カ イ ト: the perovskite) piezoelectric body film of type.
Then, epitaxial growth thickness is the electrode film 54A (with reference to (c) part of Fig. 2) of 0.2 μ m on piezoelectric body film 52A.More particularly, under above-mentioned oxygen plasma environment, above monocrystalline silicon substrate 14, supply with Pt, form the electrode film 54A that constitutes by Pt by Pt evaporation part 28.
As mentioned above, finish the making of the first substrate 56A of lamination oxidation film 44A, electrode film 46A, piezoelectric body film 52A and electrode film 54A in turn on monocrystalline silicon substrate 14.In addition, prepare a substrate (second substrate 56B) identical with this first substrate 56A.That is, this second substrate 56B is the corresponding respectively oxidation film 44B (ZrO of oxidation film 44A, the electrode film 46A of lamination and the first substrate 56A, piezoelectric body film 52A and electrode film 54A in turn on monocrystalline silicon substrate 14
2 Film 40B, Y
2O
3Film 42B), electrode film 46B, piezoelectric body film 52B (PLT film 48B, PZT film 50B) and electrode film 54B.
Then, from manufacturing installation 10, take out the first and second substrate 56A, 56B, mode to coincide as the electrode film 54A of the first substrate 56A the superiors film and electrode film 54B as the second substrate 56B the superiors film engages the first substrate 56A and the second substrate 56B (with reference to (d) part of Fig. 2) by bonding agent.
Then, by etching solutions such as alkaline solutions such as potassium hydroxide, fluoric acid, fluorine nitric acid the monocrystalline silicon substrate 14 of a face is removed (with reference to (e) part of Fig. 2).Thus, obtaining with adhesive film 58 is the center, electrode film 54A, 54B arranged side by side in turn, piezoelectric body film 52A, 52B, electrode film 46A, 46B, the laminate 60 of oxidation film 44A, 44B is with the laminated substrate 61 that is pasted with monocrystalline silicon substrate 14 on a face 60a (hereinafter referred to as real estate) of this laminate 60.In other words, laminate 60 has two groups of laminated structures that have piezoelectric body film 52A, 52B between electrode film is to (electrode film 46A and electrode film 54A are a pair of, electrode film 46B and electrode film 54B to).
Then, use known photoetching process (photolithography) technology, laminated substrate 61 (promptly forming the monocrystalline silicon substrate 14 of laminate 60) is carried out the ZrO from the superiors
2Film 40B forms (with reference to (a) part of Fig. 3) to the pattern of PLT film 48A, with corresponding with piezoelectric device described later 74.Form to determine the outer rim of piezoelectric body film 52A by this pattern.And, with respect to the part that forms each laminate 60 that is separated by pattern, form three hole 70A, 70B, 70C that arrive electrode film 54A, electrode film 46B and electrode film 54B respectively with this pattern formation.
Then,, form equally, electrode film 46A and oxidation film 44A are carried out pattern formation (with reference to (b) part of Fig. 3) with above-mentioned pattern for the part that forms each laminate 60 that is separated by pattern.This pattern forms, and makes whole outer rim of electrode film 46A and oxidation film 44A, and only Gui Ding width d more is positioned at the outside than whole outer rims of piezoelectric body film 52A.Formed by such pattern, making become each of piezoelectric device 74 laminate 60 separation on substrate 14 fully.And, form with this pattern, in each laminate 60, hole 70A extends arrival electrode film 46A, forms the hole 70D that extends to electrode film 54A from electrode film 54B in the bottom surface of hole 70C simultaneously.
Then; coating polyimide 72 on the whole surface of monocrystalline silicon substrate 14; by polyimides (diaphragm) 72 the top of each laminate 60 and side one are covered, simultaneously, filled polyimide 72 in the 70A～70D of the hole of each laminate 60 (with reference to (c) part of Fig. 3).Then, the pattern that carries out polyimides 72 forms, and determines the outer rim (with reference to (d) part of Fig. 3) with each laminate 60 corresponding polyimides 72.At this moment, by 72 etchings of the polyimides in the 70A～70C of hole being removed, obtain the hole 70D that hole 70A～70C that medial surface covered by polyimides 72 and medial surface expose than the slightly little size of hole 70A～70C.
Then, in each laminate 60, in hole 70A～70D that medial surface is covered by polyimides 72, fill gold (Au) respectively, form three path V1, V2, V3 (with reference to (e) part of Fig. 3).In other words, path V1 extends to electrode film 46A, and path V2 extends to electrode film 46B.And path V1 is connected on polyimides 72 with path V2, by path V1 and path V2 electrode film 46A and electrode film 46B is electrically connected.And path V3 extends to electrode film 54A, because the medial surface of hole 70D do not cover by polyimides 72, so by path V3 electrode film 54A and electrode film 54B are electrically connected.
At last, by etching solutions such as alkaline solutions such as potassium hydroxide, fluoric acid, fluorine nitric acid residual monocrystalline silicon substrate 14 is removed (with reference to (f) part of Fig. 3).Thus, obtain that a face (being the opposing face 60b of real estate 60a) and side 60c are covered by polyimides 72 and piezoelectric device 74 that laminate 60 that another face (being real estate 60a) exposes separates from monocrystalline silicon substrate 14.Wherein, when using this piezoelectric device 74, by path V1 and path V2, a joint of AC power is connected with electrode film 46A and electrode film 46B, and another joint then is connected with electrode film 54A and electrode film 54B by path V3.
Then, with reference to Fig. 4, to when making piezoelectric device 74, the etching operation of removing above-mentioned second monocrystalline silicon substrate 14 is elaborated.
When monocrystalline silicon substrate 14 separated, monocrystalline silicon substrate 14 immersed etching solution from the opposite side of face 14a that forms laminate 60 at laminate 60.More particularly, use pressure sensitive adhesive double coated, to be attached in the mode relative of 61a above it on base materials (not shown) such as ethlyene dichloride by the laminated substrate 61 that polyimides 72 was covered, was formed with path V1, V2, V3 with base material, seal this laminated substrate 61 around, all immerse etching solution.At this moment, the polyimides 72 of etching solution from the real estate 60a of laminate 60 immerses with the bonding part of laminate 60, the situation of piezoelectric body film 52A dissolving takes place, but confirmed by the inventor.
Therefore, in piezoelectric device 74, compare, make the outer rim R1 of piezoelectric body film 52A become the inboard and make with outer rim R2 to the dissolubility resistent of the etching solution electrode film 46A higher than piezoelectric body film 52A.Therefore, under situation about immersing between polyimides 72 and the laminate 60, this etching solution is by the path A of very big circuitous electrode film 46A at etching solution.On the other hand, in the piezoelectric device of and the prior art of making unanimous on the whole in the outer rim of the outer rim of electrode film 46A and piezoelectric body film 52A, the circuitous electrode film 46A of etching solution, but the direct path B by arrival piezoelectric body film 52A point-blank.In other words, in piezoelectric device 74, etching solution arrives the path of piezoelectric body film 52A, because of electrode film 46A prolongs wittingly, compares with the piezoelectric device of prior art, and etching solution is difficult to arrive piezoelectric body film 52A.Therefore, in this piezoelectric device 74, can suppress the generation of the situation of the etched liquid dissolving of piezoelectric body film 52A wittingly, compare with the piezoelectric device of prior art, performance is improved.And, by avoiding the dissolving of piezoelectric body film 52A, and can improve the rate of finished products and the productivity of piezoelectric device 74.
Wherein, as mentioned above, in piezoelectric device 74,, whole outer rim R1 of piezoelectric body film 52A becomes the inboard, so etching solution just more is difficult to arrive piezoelectric body film 52A because comparing with the outer rim R2 of electrode film 46A.Here, become the inboard if at least a portion of the outer rim R1 of piezoelectric body film 52A is compared with the outer rim R2 of electrode film 46A, then therefore the electrode film 46A because the etching solution of this peripheral edge portion can make a circulation can access The above results.But, if comparing with the outer rim R2 of electrode film 46A, whole outer rim R1 of piezoelectric body film 52A becomes the inboard, can obtain better effect certainly.
In addition, distance (width) d between the outer rim R2 of the outer rim R1 of piezoelectric body film 52A and electrode film 46A is long more, and certainly etching solution also just is difficult to arrive piezoelectric body film 52A more, therefore can control the generation of situation of the dissolving of piezoelectric body film 52A more accurately.Therefore, the length of preferred d is the thickness (0.05 μ m) of oxidation film 44A and more than 10 times of summation thickness of the thickness (0.2 μ m) of electrode film 46A.And, enlarge electrode film 46A and make the result who enlarges apart from d, under the situation that electrode film 46A exposes from the formation zone of polyimides 72, the electrode film of its exposed portions serve also can be covered (with reference to Fig. 5) by the polyimides 72A with polyimides 72 non-one.Like this, by adopting two polyimides 72,72A, owing to being easy to change the size and the constituent material of diaphragm, so can realize the variation of diaphragm.And, when forming diaphragm, owing to diaphragm is to be divided into repeatedly forming,, can change the constituent material of diaphragm, so can realize the variation of diaphragm so in the formation of second later diaphragm, can adjust the size of diaphragm.
(second execution mode)
Then, with reference to Fig. 6, the order of making piezoelectric device 74B in second execution mode is illustrated.
Making in second execution mode under the situation of piezoelectric device 74B, also is to prepare laminated substrate 61 with the same order of first execution mode.
Then, use known lithography technology, the ZrO that laminated substrate 61 is carried out from the superiors
2Film 40B forms (with reference to (a) part of Fig. 6) to the pattern of electrode film 46B, and making becomes the corresponding size with aftermentioned piezoelectric device 74B.Form to determine the outer rim of piezoelectric body film 52A by this pattern.And, form with this pattern, for the part that forms each laminate 60 that is separated by pattern, form and same hole 70A, 70B, the 70C of first execution mode.
Then,, form equally, oxidation film 44A (the first film) is carried out pattern form (with reference to (b) part of Fig. 6) with above-mentioned pattern for the part that forms each laminate 60 that is separated by pattern.This pattern forms, and makes whole outer rim of oxidation film 44A, and only Gui Ding width d more is positioned at the outside than whole outer rims of piezoelectric body film 52A.Formed by such pattern, making become each of piezoelectric device 74B laminate 60 separation on substrate 14 fully.And, form with this pattern, in each laminate 60, hole 70A extends arrival electrode film 46A, simultaneously, forms the hole 70D that extends to electrode film 54A from electrode film 54B in the bottom surface of hole 70C.
Thereafter, according to the order same with first execution mode, carry out the coating (with reference to (c) part of Fig. 6) of polyimides 72, the pattern of polyimides 72 forms (with reference to (d) part of Fig. 6), the formation of path V1, V2, V3 (with reference to (e) part of Fig. 6), and the removal of monocrystalline silicon substrate 14 (with reference to (f) part of Fig. 6), finish the making of piezoelectric device 74B.By the explanation of above manufacture method as can be known, this piezoelectric device 74B is only for piezoelectric body film 46A, different with the piezoelectric device 74 of first execution mode.
Then, to when making piezoelectric device 74B, the operation of above-mentioned second monocrystalline silicon substrate 14 is removed in etching, is elaborated with reference to Fig. 7.
In second execution mode, laminate 60 from the separation of monocrystalline silicon substrate 14 by carrying out with the same method of first execution mode.And, in the piezoelectric device 74B of second execution mode, compare with outer rim R3 to the dissolubility resistent of the etching solution oxidation film 44A higher than piezoelectric body film 52A, become inboard mode and make with the outer rim R1 of piezoelectric body film 52A.Therefore, at etching solution under situation about immersing between polyimides 72 and the laminate 60, the path A of this etching solution by very big circuitous oxidation film 44A '.On the other hand, in the piezoelectric device of and the prior art of making unanimous on the whole in the outer rim of the outer rim of oxidation film 44A and piezoelectric body film 52A, the circuitous oxidation film 44A of etching solution, but the direct path B ' by arrival piezoelectric body film 52A point-blank.That is, in piezoelectric device 74B, etching solution arrives the path of piezoelectric body film 52A, because of oxidation film 44A is prolonged wittingly, compares with the piezoelectric device of prior art, and etching solution is difficult to arrive piezoelectric body film 52A.Therefore, also same in this piezoelectric device 74B with above-mentioned piezoelectric device 74,74A, can suppress the generation of the situation of the etched liquid dissolving of piezoelectric body film 52A wittingly, to compare with the piezoelectric device of prior art, performance is improved.And, by avoiding the dissolving of piezoelectric body film 52A, can improve rate of finished products and the productivity of piezoelectric device 74B.
Here, the inventor has carried out following experiment in order to investigate the immersion situation of etching solution in more detail.Promptly, prepare the piezoelectric device (sample #1) of piezoelectric device 74 (sample #2), the piezoelectric device 74B (sample #3) in second execution mode and prior art in first execution mode before 400 second monocrystalline silicon substrate 14 etchings are removed respectively, using above-mentioned etching solution that SiC monocrystalline residual in each piezoelectric device is carried out etching removes, afterwards, whether by the immersion of etching solution is investigated in etching to piezoelectric body layer, calculates the ratio (immersion prevents rate) of the piezoelectric device that etching solution do not immerse.It the results are shown in following table 1.
Table 1
| Total sample number | Etching sample number not | Immersion prevents rate (%) | |
| Sample #1 | 400 | 0 | 0.0 |
| Sample #2 | 400 | 232 | 58.0 |
| Sample #3 | 400 | 386 | 96.5 |
That is, in the piezoelectric device (sample #1) of prior art, confirm in whole samples, to exist the immersion of etching solution.On the other hand, in the piezoelectric device 74B (sample #3) of the piezoelectric device 74 (sample #2) of first execution mode and second execution mode, confirm that not etched sample is respectively 232,386.From this result as can be known, as sample #2 and sample #3, by prolonging the path that etching solution arrives piezoelectric body film, compare, can suppress the immersion of etching solution clearly with the piezoelectric device of the prior art of sample #1.
And as known from Table 1, (sample #2) compares with piezoelectric device 74, and piezoelectric device 74B (sample #3) can prevent the immersion of etching solution.This is considered to different caused for the fluid-tight engagement of polyimides 72 with oxidation film 44A by electrode film 46A.In other words, with electrode film 46A the fluid-tight engagement intensity of polyimides 72 is compared, oxidation film 44A is higher to the fluid-tight engagement intensity of polyimides 72, and its result thinks that oxidation film 44A can more effectively prevent the immersion of etching solution to piezoelectric device 74B to the fluid-tight engagement of polyimides 72.Wherein, in sample #3, the precision that film formation process when improve making and pattern form operation with the particle of suppression equipment and the influence of damage, is thought the immersion that can suppress etching solution thus fully.
So the piezoelectric device 74B of second execution mode compares with piezoelectric device 74, the 74A of first execution mode, can suppress the dissolving of the etched liquid of piezoelectric body film 52A more reliably.
Wherein, in piezoelectric device 74B, if at least a portion of the outer rim R3 of oxidation film 44A is more more inboard than the outer rim R1 of electrode film 46A, then owing to the circuitous electrode film 46A of the etching solution of this peripheral edge portion, so also can access above-mentioned effect.But,, can access better effect certainly if whole outer rim R1 of piezoelectric body film 52A are more inboard than the outer rim R3 of oxidation film 44A.
And distance (width) d of the whole outer rim R1 of piezoelectric body film 52A and the outer rim R3 of oxidation film 44A is long more, certainly, because etching solution is difficult to arrive piezoelectric body film 52A more, so can suppress the dissolving of piezoelectric body film 52A more accurately.Therefore, the piezoelectric device of second execution mode, also such with the piezoelectric device 74A of first execution mode, can be the piezoelectric device 74C (with reference to Fig. 8) that is covered by polyimides 72A with polyimides 72 non-one.
The present invention also is not limited to above-mentioned execution mode, can carry out various distortion.For example, electronic equipment also is not limited to piezoelectric device, also can be the various device with function films such as dielectric film and electric conductor film, semiconductor films.And the number of plies of laminate also is not limited to the above-mentioned number of plies, can suitably select in the number of plies more than two-layer (the first film and second film).
Substrate also is not limited to monocrystalline silicon substrate, also can be by monocrystalline silicon substrate that material constituted and the polycrystalline silicon substrate different with silicon.Removing the employed liquid of substrate, so long as compare the liquid of easier dissolving second film with the first film, also be not limited to above-mentioned etching solution, for example, also can be the grinding agent that comprises liquid.Diaphragm also is not limited to polyimides, can select having in the high corrosion proof material for employed etching solution.
The constituent material of electrode film also is not limited to platinum (Pt), for example can be at least a material that comprises in the metal group of being made up of gold (Au), iridium (Ir), palladium (Pd), rhodium (Rh), copper (Cu).And piezoelectric body film also is not limited to said structure, can be the single-orientated film of c face that is made of strontium titanates lead plumbate and lead titanates.And, in the making of membrane piezoelectric element, also can adopt other manufacturing installation, for example can use sputter equipment and MBE device etc.
In the above-described embodiment, it is the explanation that the manufacture method of the electronic equipment (piezoelectric device) of final each self-separation is carried out, but also can be, for example with the laminated substrate of state shown in the part of the part of Fig. 3 (c) and Figure 36 (c), be attached at the substrate of other preparation with bonding agent, obtain the electronic equipment of a plurality of arrangements on this substrate thus.
Claims (20)
1. the manufacture method of an electronic equipment is characterized in that:
Be to use etching solution, from being formed with the laminated substrate of the laminate that become electronic equipment at substrate, the manufacture method of the electronic equipment that described substrate is removed comprises:
Form on the described substrate comprise the first film and on described the first film, form, than the step of the described laminate of easier second film that is dissolved in described etching solution of described the first film;
Form the step of the diaphragm that covers described laminate; With
Use described etching solution, with the step of described substrate from described laminated substrate removal, wherein,
When the described laminate of film forming, form described second film, make the outer rim of at least a portion of the outer rim of described second film and described the first film be in a ratio of the inboard.
2. the manufacture method of electronic equipment according to claim 1 is characterized in that:
When the described laminate of film forming, form described second film, make the outer rim of described second film and whole outer rim of described the first film be in a ratio of the inboard.
3. the manufacture method of electronic equipment according to claim 1 is characterized in that:
Described laminate is included in the laminated structure that has piezoelectric body film between the pair of electrodes film,
Described the first film is the described electrode film of the near side of the described substrate of distance in the described a pair of electrode film, and described second film is described piezoelectric body film.
4. the manufacture method of electronic equipment according to claim 1 is characterized in that:
Described laminate is included in the laminated structure that has piezoelectric body film between the pair of electrodes film, and is included in the oxidation film that exists between the described electrode film of the near side of the described substrate of distance in the described a pair of electrode film and the described substrate,
Described the first film is described oxidation film, and described second film is described piezoelectric body film.
5. the manufacture method of electronic equipment according to claim 1 is characterized in that:
When forming described diaphragm, be described diaphragm to be divided into repeatedly form.
6. the manufacture method of an electronic equipment is characterized in that:
Be to use the grinding agent that comprises liquid, from forming the laminated substrate of the laminate become electronic equipment at substrate, the manufacture method of the electronic equipment that described substrate is removed comprises:
Form on the described substrate comprise the first film and on described the first film, form, than the step of the described laminate of easier second film that is dissolved in described grinding agent of described the first film;
Form the step of the diaphragm that covers described laminate; With
Use described grinding agent, with the step of described substrate from described laminated substrate removal, wherein,
When the described laminate of film forming, form described second film, make the outer rim of at least a portion of the outer rim of described second film and described the first film be in a ratio of the inboard.
7. the manufacture method of electronic equipment according to claim 6 is characterized in that:
When the described laminate of film forming, described second film that is shaped makes the outer rim of described second film and whole outer rim of described the first film be in a ratio of the inboard.
8. the manufacture method of electronic equipment according to claim 6 is characterized in that:
Described laminate is included in the laminated structure that has piezoelectric body film between the pair of electrodes film,
Described the first film is the described electrode film of the near side of the described substrate of distance in the described a pair of electrode film, and described second film is described piezoelectric body film.
9. the manufacture method of electronic equipment according to claim 6 is characterized in that:
Described laminate is included in the laminated structure that has piezoelectric body film between the pair of electrodes film, and is included in the oxidation film that exists between the described electrode film of the near side of the described substrate of distance in the described a pair of electrode film and the described substrate,
Described the first film is described oxidation film, and described second film is described piezoelectric body film.
10. the manufacture method of electronic equipment according to claim 6 is characterized in that:
When forming described diaphragm, be described diaphragm to be divided into repeatedly form.
11. an electronic equipment is characterized in that:
Be to use etching solution, from form the laminated substrate of the laminate become electronic equipment at substrate, described substrate to be removed and the electronic equipment that obtains, described laminate has the opposing party's of a side the face of a side opposite with described substrate and described substrate-side face, wherein
A described side's of described laminate face and side are covered by diaphragm; described the opposing party's face exposes from described diaphragm; and comprise the first film, and be positioned at a described side's of described the first film face one side, than easier second film that is dissolved in described etching solution of described the first film
The outer rim of the outer rim of described second film and at least a portion of described the first film is in a ratio of the inboard.
12. electronic equipment according to claim 11 is characterized in that:
Whole outer rim of the outer rim of described second film and described the first film is in a ratio of the inboard.
13. electronic equipment according to claim 11 is characterized in that:
Described laminate is included in the laminated structure that has piezoelectric body film between the pair of electrodes film,
Described the first film is the described electrode film of the near side of the described substrate of distance in the described a pair of electrode film, and described second film is described piezoelectric body film.
14. electronic equipment according to claim 11 is characterized in that:
Described laminate is included in the laminated structure that has piezoelectric body film between the pair of electrodes film, and is included in the oxidation film that exists between the described electrode film of the near side of the described substrate of distance in the described pair of electrodes film and the described substrate,
Described the first film is described oxidation film, and described second film is described piezoelectric body film.
15. electronic equipment according to claim 11 is characterized in that:
Described diaphragm is to be made of multilayer resist.
16. an electronic equipment is characterized in that:
Be to use the grinding agent that comprises liquid, from form the laminated substrate of the laminate become electronic equipment at substrate, described substrate to be removed and the electronic equipment that obtains, described laminate has the opposing party's of a side the face of a side opposite with described substrate and described substrate-side face, wherein
A described side's of described laminate face and side are covered by diaphragm; described the opposing party's face exposes from described diaphragm; and comprise the first film, and be positioned at a described side's of described the first film face one side, than easier second film that is dissolved in described grinding agent of described the first film
The outer rim of the outer rim of described second film and at least a portion of described the first film is in a ratio of the inboard.
17. electronic equipment according to claim 16 is characterized in that:
Whole outer rim of the outer rim of described second film and described the first film is in a ratio of the inboard.
18. electronic equipment according to claim 16 is characterized in that:
Described laminate is included in the laminated structure that has piezoelectric body film between the pair of electrodes film,
Described the first film is the described electrode film of the near side of the described substrate of distance in the described a pair of electrode film, and described second film is described piezoelectric body film.
19. electronic equipment according to claim 16 is characterized in that:
Described laminate is included in the laminated structure that has piezoelectric body film between the pair of electrodes film, and is included in the oxidation film that exists between the described electrode film of the near side of the described substrate of distance in the described pair of electrodes film and the described substrate,
Described the first film is described oxidation film, and described second film is described piezoelectric body film.
20. electronic equipment according to claim 16 is characterized in that:
Described diaphragm is to be made of multilayer resist.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005172477A JP4670495B2 (en) | 2004-09-06 | 2005-06-13 | Electronic device and manufacturing method thereof |
| JP2005172477 | 2005-06-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1881639A CN1881639A (en) | 2006-12-20 |
| CN100495754C true CN100495754C (en) | 2009-06-03 |
Family
ID=37519721
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200610058368 Active CN100495754C (en) | 2005-06-13 | 2006-03-03 | Electronic device and method of making same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100495754C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111146328A (en) * | 2019-12-31 | 2020-05-12 | 诺思(天津)微***有限责任公司 | Single crystal piezoelectric structure and electronic device having the same |
-
2006
- 2006-03-03 CN CN 200610058368 patent/CN100495754C/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN1881639A (en) | 2006-12-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5305993B2 (en) | Capacitive electromechanical transducer manufacturing method and capacitive electromechanical transducer | |
| JP4018088B2 (en) | Semiconductor wafer dividing method and semiconductor element manufacturing method | |
| JP5917026B2 (en) | Method for manufacturing semiconductor device | |
| CN101609828B (en) | Semiconductor device and method of manufacturing the same | |
| CN100495754C (en) | Electronic device and method of making same | |
| US7268431B2 (en) | System for and method of forming via holes by use of selective plasma etching in a continuous inline shadow mask deposition process | |
| US8727508B2 (en) | Bonded silicon structure for high density print head | |
| CN105659401B (en) | The manufacturing method of piezoelectric element, ink gun, ink-jet printer and piezoelectric element | |
| KR102028639B1 (en) | Method of mask, buffer substrate for supporting mask and producing method thereof | |
| JP2000164395A (en) | Substrate electrode plasma generating device and substance and material processing method using the same | |
| CN108630575B (en) | Substrate processing apparatus and substrate processing method | |
| JP4369142B2 (en) | Pressure wave generator and manufacturing method thereof | |
| US11990371B2 (en) | Device chip manufacturing method | |
| JP5538951B2 (en) | Film forming method, program, and computer storage medium | |
| JP4670495B2 (en) | Electronic device and manufacturing method thereof | |
| JP2011254281A (en) | Manufacturing method of capacity type electromechanical conversion apparatus, and capacity type electromechanical conversion apparatus | |
| JP3299715B2 (en) | Chip potential extraction structure and manufacturing method | |
| US20050221523A1 (en) | Film formation method, substrate, and liquid discharge head | |
| JP4517360B2 (en) | Method for manufacturing droplet discharge head | |
| JP2019071361A (en) | Electromechanical conversion element, liquid discharge head, liquid discharge unit, device discharging liquid, ultrasonic generator, and method for manufacturing electromechanical conversion element | |
| WO2021248503A1 (en) | Ultrasonic transducer preparation method, ultrasonic transducer, and information collection element | |
| JP2001303295A (en) | Plating apparatus | |
| CN113336182A (en) | Micro electro mechanical system packaging structure and preparation method thereof | |
| JP4033318B2 (en) | Inkjet head manufacturing method | |
| JP2019166658A (en) | Method for production of base plate for liquid discharge head |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |