CN100495095C - Micro-heating device used in planar optical waveguide thermo-optic devices and manufacture method therefor - Google Patents
Micro-heating device used in planar optical waveguide thermo-optic devices and manufacture method therefor Download PDFInfo
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- CN100495095C CN100495095C CNB2007100668395A CN200710066839A CN100495095C CN 100495095 C CN100495095 C CN 100495095C CN B2007100668395 A CNB2007100668395 A CN B2007100668395A CN 200710066839 A CN200710066839 A CN 200710066839A CN 100495095 C CN100495095 C CN 100495095C
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- transmission line
- optical waveguide
- heating arrangement
- thermo
- planar optical
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 16
- 230000003287 optical effect Effects 0.000 title claims description 34
- 238000004519 manufacturing process Methods 0.000 title description 3
- 230000005540 biological transmission Effects 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims description 13
- 238000001259 photo etching Methods 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 6
- 238000000926 separation method Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 12
- 239000002184 metal Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 206010037660 Pyrexia Diseases 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
Abstract
This invention relates to one plane light wave heat conductive part micro heating device, which comprises light transmission channel, two contact point connected to outer power to connect light transmission channel through connection arm, wherein, the light transmission channel is of rip light wave guide orderly depositing isolation layer, chip layer, upper pack layer and heat electrode film on underlay; two contact points and connection arm has same layer structure in height direction. The process method comprises steps of etching to form light transmission channel, connection arm and contact point; then using etch method to form micro heating device.
Description
Technical field
The present invention relates to planar optical waveguide integrated device field, particularly relate to a kind of little heating arrangement that is used for the planar optical waveguide thermo-optical device and preparation method thereof.
Background technology
Utilizing thermo-optic effect is to realize a kind of important means of tunable light device, as thermo-optical switch, hot photomodulator, variable optical attenuator, tunable power splitter and hot optic tunable filter etc.And to realize thermo-optical device, heating arrangement is very important.Two contact points that present heating arrangement comprises transmission line, metal fever electrode and connects external power source.The transmission line cross section as shown in Figure 1, by substrate 6 and the separation layer 7, sandwich layer 8, top covering 9 and the metal thermoelectric very thin films 10 that are deposited on successively from bottom to top on the substrate form, wherein top covering 9 has covered sandwich layer 8 fully.The width of the metal fever electrode 10 that forms on top covering 9 is usually greater than transmission line sandwich layer 8 width.
The making of this heating arrangement need be passed through Twi-lithography, normally finishes the making of separation layer 7 on the substrate 6, sandwich layer 8, top covering 9 earlier, and this needs photoetching for the first time.Next deposit the thermode film again and carry out the photoetching second time and etching, form needed thermode.So also just need be respectively applied for two mask plates of optical waveguide and thermode, not only increase process complexity, also increase cost of manufacture, and Twi-lithography (alignment) to there be more accurate aligning.
On the other hand, low-power consumption also is the extremely important index that heating arrangement is pursued.In order to reduce heat power consumption, often wish to adopt less thermode width.Overlay alignment during this just makes to the traditional heating device has brought bigger difficulty.In order to reduce the alignment process difficulty, often adopt the thermode of broad, generally be the several times of optical waveguide width.This will produce certain restriction to the development that realizes the low-power consumption thermo-optical device.
Summary of the invention
The purpose of this invention is to provide a kind of heat power consumption that helps reducing, technology simply is used for little heating arrangement of planar optical waveguide thermo-optical device and preparation method thereof.
The present invention is used for little heating arrangement of planar optical waveguide thermo-optical device, comprise transmission line, be used to connect two contact points of external power source, transmission line by substrate and the separation layer, sandwich layer, top covering and the thermode film that are deposited on successively from bottom to top on the substrate form, two contact points link to each other with transmission line through linking arm respectively, it is characterized in that transmission line is a ridge optical waveguide, the width of top covering, thermode film and sandwich layer is identical, and two contact points and linking arm have the layer structure identical with transmission line on short transverse.
In order to reduce the optical power loss in the transmission line that linking arm causes, make usually that linking arm and transmission line are vertical to link to each other, and at link to each other with two linking arms width broadening of transmission line of part of transmission line.
Be used for the preparation method of little heating arrangement of planar optical waveguide thermo-optical device, may further comprise the steps:
1) layer deposited isolating, sandwich layer, top covering and thermode film successively from bottom to top on substrate;
2) transmission line, contact point and the linking arm figure that utilizes photoetching method once to form to set on the mask plate;
3) utilize lithographic method, be formed for little heating arrangement of planar optical waveguide thermo-optical device.
The effect that the present invention is useful is:
1. the little heating arrangement that is used for the planar optical waveguide thermo-optical device of the present invention, because transmission line is a ridge optical waveguide, the width of the top covering of transmission line, thermode film and sandwich layer is identical, therefore on method for making, only need a photoetching, avoid alignment process, simplified manufacture craft greatly; And be convenient to make the less thermode of width (wide), help reducing heat power consumption with transmission line, especially more outstanding for miniaturization lightwave conduction optical device advantage.
2. the metal fever electrode at transmission line top also can be used as the metal mask in the etching technics, does not therefore need to make extra mask.
3. the present invention has wide applications, can be used for the multiple thermo-optical device that is made of Mach-Zehnder interferometer, micro-resonance loop etc., comprises thermo-optical switch, hot photomodulator, variable optical attenuator, tunable power splitter and hot optic tunable filter etc.And be not subjected to materials limitations, can be used for the optical waveguide of multiple materials such as silicon, macromolecular material, silicon dioxide.
Description of drawings
Fig. 1 is the sectional view of traditional transmission line;
Fig. 2 is the little heating arrangement vertical view that is used for the planar optical waveguide thermo-optical device of the present invention;
Fig. 3 is the sectional view (BB ' cross section of Fig. 2) of transmission line in the little heating arrangement of the present invention;
Fig. 4 is the little heating arrangement 3-D view that is used for the planar optical waveguide thermo-optical device of the present invention;
Fig. 5 is the enforcement illustration that the little heating arrangement that is used for the planar optical waveguide thermo-optical device of the present invention is applied to Mach-Zehnder interferometer.
Embodiment
With reference to Fig. 2, the little heating arrangement that is used for the planar optical waveguide thermo-optical device of the present invention comprises transmission line 1, is used to connect two contact points 2,3 of external power source, and two linking arms 4,5 that connect transmission line and two contact points.Said transmission line 1 (as shown in Figure 3) by substrate 6 and the separation layer 7, sandwich layer 8, top covering 9 and the thermode film 10 that are deposited on successively from bottom to top on the substrate form.Transmission line 1 is a ridge optical waveguide, and top covering 9, thermode film 10 are identical with the width of sandwich layer 8.Two contact points 2,3, linking arm 4,5 and transmission lines 1 have identical layer structure (see figure 4) on short transverse.
In order to reduce the optical power loss in the transmission line that linking arm causes, adopt narrower linking arm width, two linking arms 4,5 link to each other with transmission line is vertical, and at link to each other with two linking arms 4, the 5 width broadening of transmission line of part 11,12 of transmission line 1.
The thermode film at the transmission line top between two linking arms is as heating electrode, and its length is by two linking arm determining positions.
The preparation method who is used for little heating arrangement of planar optical waveguide thermo-optical device of the present invention, whole process flow is as follows: at first, adopt conventional method layer deposited isolating 7, sandwich layer 8, top covering 9 and thermode film 10 on substrate 6; Secondly, spin coating one deck photoresist on thermode film 10 once forms transmission line 1, contact point 2,3 and linking arm 4,5 figures of setting on the mask plate with photoetching method; Utilize lithographic method again, the etching certain depth is formed for little heating arrangement of planar optical waveguide thermo-optical device.
Because the present invention does not need special process, thereby can be used for the thermo-optical device of multiple material, structure, has good practicability.For example, apply the present invention to (with reference to Fig. 5) in the Mach-Zehnder interferometer, one of them interferes arm to introduce little heating arrangement of the present invention, can change the optical path difference of MZI two arms, thereby realizes thermo-optical switch or modulation.In Fig. 5 dotted line is little heating arrangement of the present invention.In these examples of implementation, choose the silicon nanowires optical waveguide.On silicon substrate 6, form the thick SiO of 1 μ m
2Separation layer 7, the thick SiO of Si sandwich layer 8,450nm that 350nm is thick
2The thermode film 10 that top covering 9 and 100nm are thick.Si sandwich layer 8, SiO
2Top covering 9 and thermode film 10 width are 400nm, the high h of transmission line ridge
EtAt 0＜h
Et＜h
Co+ h
ClValue within the scope, wherein h
Co, h
ClBe respectively the thickness of sandwich layer 8, top covering 9.In this example, choose the high h of ridge
Et=h
Co+ h
Cl=800nm, promptly top covering, sandwich layer are all worn by quarter.The size of two contact points 2,3 is 100 μ m * 100 μ m, and length, the width of linking arm 4,5 are respectively 1 μ m, 200nm.In order to reduce the excess loss that linking arm 4,5 is introduced, having adopted length is that 11,12 width extends to 600nm in the junction with transmission line 1 for the pyramidal structure of 1 μ m.Two linking arm spacings also instant heating electrode length are 30 μ m.Adopt above design, when applied power is 10mW, can make hot optical waveguide sandwich layer temperature rising more than 100 degree.
Claims (3)
1, a kind of little heating arrangement that is used for the planar optical waveguide thermo-optical device, comprise transmission line (1), be used to connect two contact points (2 of external power source, 3), transmission line (1) is by substrate (6) and be deposited on separation layer (7) on the substrate (6) from bottom to top successively, sandwich layer (8), top covering (9) and thermode film (10) are formed, two contact points (2,3) respectively through linking arm (4,5) link to each other with transmission line, it is characterized in that transmission line (1) is a ridge optical waveguide, top covering (9), thermode film (10) is identical with the width of sandwich layer (8), two contact points (2,3) and linking arm (4,5) on short transverse, have the layer structure identical, at transmission line (1) and two linking arms (4 with transmission line (1), 5) continuous part (11, the width broadening of transmission line 12).
2. the little heating arrangement that is used for the planar optical waveguide thermo-optical device according to claim 1 is characterized in that said linking arm (4,5) links to each other with being connected to of transmission line is vertical.
3, the described preparation method who is used for little heating arrangement of planar optical waveguide thermo-optical device of claim 1 may further comprise the steps:
1) layer deposited isolating (7), sandwich layer (8), top covering (9) and thermode film (10) successively from bottom to top on substrate (6);
2) transmission line, contact point and the linking arm figure that utilizes photoetching method once to form to set on the mask plate;
3) utilize lithographic method, be formed for little heating arrangement of planar optical waveguide thermo-optical device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100668395A CN100495095C (en) | 2007-01-24 | 2007-01-24 | Micro-heating device used in planar optical waveguide thermo-optic devices and manufacture method therefor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100668395A CN100495095C (en) | 2007-01-24 | 2007-01-24 | Micro-heating device used in planar optical waveguide thermo-optic devices and manufacture method therefor |
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| Publication Number | Publication Date |
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| CN101008692A CN101008692A (en) | 2007-08-01 |
| CN100495095C true CN100495095C (en) | 2009-06-03 |
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| CNB2007100668395A Expired - Fee Related CN100495095C (en) | 2007-01-24 | 2007-01-24 | Micro-heating device used in planar optical waveguide thermo-optic devices and manufacture method therefor |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101915998B (en) * | 2010-07-23 | 2012-05-02 | 吉林大学 | Reflecting type thermal-optical variable optical attenuator based on SOI (Silicon-On-Insulator) optical waveguides and preparation method thereof |
| CN104316995B (en) * | 2014-10-16 | 2017-06-23 | 浙江大学 | Planar optical waveguide heater based on two-dimentional carbon material and preparation method thereof |
| CN107727123B (en) * | 2017-09-28 | 2020-01-17 | 哈尔滨工程大学 | Adjustable type fiber integration Michelson interferometer based on electric heating effect |
| CN107702735B (en) * | 2017-09-28 | 2020-01-17 | 哈尔滨工程大学 | Adjustable fiber integration Mach-Zehnder interferometer based on electrothermal effect |
| CN109491108B (en) * | 2019-01-02 | 2020-05-19 | 吉林大学 | Loaded strip waveguide thermo-optic switch based on graphene heating electrode and preparation method thereof |
| CN113176674A (en) * | 2021-03-01 | 2021-07-27 | 中国科学院微电子研究所 | Low-power consumption thermo-optical device and manufacturing method thereof |
| CN114089598A (en) * | 2022-01-24 | 2022-02-25 | 浙江光特科技有限公司 | Method for manufacturing semiconductor device |
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