CN100492017C - Method for producing batch vertical probe clasp micro-hole guide plate - Google Patents
Method for producing batch vertical probe clasp micro-hole guide plate Download PDFInfo
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- CN100492017C CN100492017C CNB200510129020XA CN200510129020A CN100492017C CN 100492017 C CN100492017 C CN 100492017C CN B200510129020X A CNB200510129020X A CN B200510129020XA CN 200510129020 A CN200510129020 A CN 200510129020A CN 100492017 C CN100492017 C CN 100492017C
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Abstract
The invention relates to a normal case probe card Millipore guide plate that includes the following steps: adopting a nonmetal material thin board, laying a masking layer, etching blind hole that has preset depth, milling thin board to make the blind hole to Millipore, removing masking layer to gain Millipore guide plate.
Description
Technical field
The present invention is the relevant of vertical probe clasp micro-hole guide plate, but the more detailed method that is meant a kind of producing in batch vertical probe clasp micro-hole guide plate.
Background technology
Generally in order to test shown in the electrical vertical probe carb 1 (as Fig. 1) of electronic package, have some micro-hole guides 2, have several micropores 3 in this micro-hole guide 2, can use respectively and place respectively for some vertical probes 4, to move by the lateral space that limits this vertical probe 4 by these micropore 3 guide plates, and provide this vertical probe 4 can be in respectively moving with its depth direction in this micropore 3, and reach the electrical purpose of test electronic package 5.
So, the method of existing manufacturing vertical probe clasp micro-hole guide plate 2 is numerous: one, as United States Patent (USP) 6,417, No. 684 patent cases, be to utilize the mode of traditional Precision Machining boring to form micropore, promptly on a pottery, engineering plastics, glass or semiconductor material, form micropore in the mode of holing one by one; But, this kind method not only bearing accuracy of its micropore and the interval between each micropore all has the restriction of its limit to exist the error of bearing accuracy will be greater than 15 μ m, and the interval between micropore (pitch) will be greater than 25 μ m, and its manufacturing cost also will increase relatively along with the quantity of micropore, not be inconsistent the demand of science and technology now already.They are two years old, as the U.S. the 6th, 297,657 B1 patent cases, be to utilize metal to add dielectric material or insulating material material as guide plate, its micropore then is to form on guide plate by the mode by Laser Processing, but so its bearing accuracy can be come accurately than the conventional borehole mode, but also causes processing charges and processing time-histories to increase relatively along with the micropore hole count in the mode that laser is processed one by one.Its three, as United States Patent (USP) the 6th, 404, No. 211 patent cases, it is to utilize the mode of number of metal layer stack to be formed guide plate, and by forming some micropores by etching technique (Etching techno1ogy) on each metal level; But, can't produce the micropore of high depth ratio during owing to etching metal because of its etching characteristic, so must be by can satisfy the function of guide plate micropore by storehouse number of metal layer; Thus, will make that not only manufacturing course is too loaded down with trivial details, waste is on the storehouse metal level the too much time, and the flatness of storehouse metal level also is not easy control.
Summary of the invention
In view of this, but fundamental purpose of the present invention provides a kind of method of producing in batch vertical probe clasp micro-hole guide plate, its can batch manufacturing to save required time and the program of processing procedure, to reduce manufacturing cost.
But another object of the present invention provides a kind of method of producing in batch vertical probe clasp micro-hole guide plate, and the machining precision of its micropore is preferable.
Another object of the present invention is but that a kind of method of producing in batch vertical probe clasp micro-hole guide plate is being provided, and the aperture of its micropore can more dwindle.
Another purpose of the present invention is but that a kind of method of producing in batch vertical probe clasp micro-hole guide plate is being provided, and the spacing between its each micropore can more be dwindled.
A further object of the present invention is but that a kind of method of producing in batch vertical probe clasp micro-hole guide plate is being provided, and is to make large-area micro-hole guide.
A further object of the present invention is but that a kind of method of producing in batch vertical probe clasp micro-hole guide plate is being provided, and is to make the micro-hole guide with temperature compensation benefit.
Edge is, for reaching above-mentioned purpose, but the method for a kind of producing in batch vertical probe clasp micro-hole guide plate provided by the present invention includes following steps: the thin plate of getting nonmetallic materials; Deposition one etch stop layer on this thin plate; On this etch stop layer, laying one possesses the shielding layer of predetermined aspect opening; Utilize the reactive ion etching etching off to be positioned at, make this etch stop layer form some perforates corresponding to this opening to etch stop layer that should the shielding layer aperture position; Remove shielding layer; Utilize the anisotropic wet etching will be, and form some micropores thin plate that should position of opening etching off in addition; Remove etch stop layer; Get final product micro-hole guide.
For making your juror, can further understanding and approval be arranged to feature of the present invention and purpose, enumerate following preferred embodiment now, and cooperate the graphic back that is illustrated in:
Description of drawings
Fig. 1 is the synoptic diagram of general Vertrical probe clasp;
Fig. 2 A to Fig. 2 J is the manufacturing process synoptic diagram of the present invention's first preferred embodiment;
Fig. 3 A to Fig. 3 H is the manufacturing process synoptic diagram of the present invention's second preferred embodiment;
Fig. 4 A to Fig. 4 I is the manufacturing process synoptic diagram of the present invention's the 3rd preferred embodiment;
Fig. 5 A to Fig. 5 L is the manufacturing process synoptic diagram of the present invention's the 4th preferred embodiment;
Fig. 6 A to Fig. 6 K is the manufacturing process synoptic diagram of the present invention's the 5th preferred embodiment.
[primary clustering symbol description]
" first preferred embodiment "
11 first 111 of thin plates
Second 112 micropore 113
121 perforates 123 of first etch stop layer
Second etch stop layer, 122 shielding layers 13
" second preferred embodiment "
21 first 211 of thin plates
Second 212 blind hole 213
Perforate 221 vertical probe clasp micro-hole guide plates 20
Pedestal 23
" the 3rd preferred embodiment "
31 first 311 of thin plates
Second 312 micropore 313
First oxide skin(coating), 321 through holes 323
Second oxide skin(coating), 322 shielding layers 33
" the 4th preferred embodiment "
41 first 411 of thin plates
Second 412 first oxide skin(coating) 421
Second oxide skin(coating), 422 first shielding layers 43
Opening 431 nitride layers 44
45 perforation 451 of second shielding layer
Vertical probe clasp micro-hole guide plate 40
" the 5th preferred embodiment "
51 first 511 of thin plates
Second 512 depressed area 513
First oxide skin(coating), 521 second oxide skin(coating)s 522
Through hole 523 counterbores 524
First nitride layer, 531 second nitride layers 532
First shielding layer, 54 openings 541
55 perforation 551 of second shielding layer
The 3rd shielding layer 56 blind holes 57
Vertical probe clasp micro-hole guide plate 50
Embodiment
Seeing also Fig. 2 A to Fig. 2 J, is that a kind of micro-hole guide of a preferred embodiment of the present invention provides Vertrical probe and limits in lateral space, and Vertrical probe is moved in the micropore depth direction, to reach the electrical purpose of the electronic assembly test point of surveying ad-hoc location; But the method for the present invention's producing in batch vertical probe clasp micro-hole guide plate, its step includes:
Steps A: shown in Fig. 2 A, get one by the made thin plate 11 of nonmetallic materials.Wherein this thin plate 11 can be silicon (Si), gallium nitride (GaN), gallium arsenide (GaAs), indium phosphorus (InP) or other and is applicable to semiconductor material with anisotropic etching (Anisotropic etching) fabrication techniques; This thin plate 11 also can be glass (Glass), pottery (Ceramics) or other are applicable to the non-conductive material with the anisotropic etching fabrication techniques.This thin plate 11 is made by silicon (Si) material in present embodiment, and this thin plate 11 can define one first 111 and one and this first 111 opposing second 112.
Step B: shown in Fig. 2 B, with low-pressure chemical vapor deposition (Low PressureChemical Vapor Deposition, LPCVD) mode deposits one first etch stop layer 121 and one second etch stop layer 122 respectively on first 111 and second 112 of this thin plate 11.
Step C: shown in Fig. 2 C, on this first etch stop layer 121, lay one with yellow light lithography (Lithography) technology and possess the shielding layer 13 of predetermined aspect opening 131 (this shielding layer is generally photoresistance (Photo Resist, PR)).Because yellow photolithographic techniques is a prior art, this does not add to give unnecessary details appearance.
Step D: shown in Fig. 2 D, utilize reactive ion etching (Reactive IonEtching, RIE) etching off is positioned at first etch stop layer 121 that should shielding layer 13 openings 131 positions in addition, makes this first etch stop layer 121 form some perforates 123 corresponding to this opening 131.
Step e: shown in Fig. 2 E, remove shielding layer 13.
Step F: shown in Fig. 2 F, utilize the mode of anisotropic wet etching (Anisotropic), in addition will to thin plate 11 that should perforate 123 positions in addition etching off till this second etch stop layer 122 of contact, the position that makes this thin plate 11 be subjected to the anisotropic wet etching forms some micropores 113 this moment.Wherein the etching solution that adopted of this anisotropic wet etching (Anisotropic) can be potassium hydroxide (KOH), ethylene diamine pyrocatechol (Ethylenediamine Pyrocatechol, EDP, Tetramethylammonium hydroxide Tetramethyl ammonium hydroxide, TMAH), diamine one such as (Hydrazine).
Step G: shown in Fig. 2 G, remove first etch stop layer 121 and second etch stop layer 122.Thus, can on this thin plate 11, form some micropores 113, to constitute micro-hole guide 10 of the present invention.
By by above-mentioned manufacturing process, the non-repeatedly storehouse of the mode mode in the same manufacturing course promptly can batch made forms has precision positioning and the small micro-hole guide of micropore spacing, and because the i.e. micropore quantity number no matter of the increase that micropore quantity can't cause manufacturing course, each micropore all is to form to see also step F in same step, can make that manufacturing cost significantly reduces, more can be in order to produce large-area micro-hole guide.Then, identical because the micro-hole guide of this preferred embodiment is to adopt silicon materials made with material in order to thing to be tested, therefore have more the effectiveness of temperature compensation.
In addition, when being bigger area, then can increase following step again,, and be used so that this micro-hole guide can be cut into some small-sized micro-hole guides as the micro-hole guide of manufacturing in the above-listed step:
Step H: shown in Fig. 2 H and Fig. 2 I, the formed micro-hole guide 10 of step G is utilized the mode of cutting, be divided into the top view of this Fig. 2 I of bulk of some pre-sizings for Fig. 2 H.
Step J: shown in Fig. 2 J, the micro-hole guide 10 after cutting is linked on the pedestal 14.
In addition, also can be on this micro-hole guide coating insulating material such as silicon dioxide (Si) O
2, aluminium oxide Al
2O
3, titanium dioxide TiO
2Or other dielectric material that is fit to, make this micro-hole guide increase its insulativity.
Moreover, also can on this micro-hole guide, as poly-acid imide polyimide or other macromolecular material that is fit to the structure toughness of this micro-hole guide be strengthened by the coating macromolecular material, or promote the lubricity in the micropore.
See also Fig. 3 A to Fig. 3 H, but be the method for the present invention's second a kind of producing in batch vertical probe clasp micro-hole guide plate that preferred embodiment provides, its step includes:
Steps A: as shown in Figure 3A, get one by the made thin plate 21 of nonmetallic materials, this thin plate 21 is made by silicon (Si) material in present embodiment, and this thin plate 21 can define one first 211 and one and this first 211 opposing second 212.
Step B: shown in Fig. 3 B, on first 211 of this thin plate 21, lay a shielding layer 22.
Step C: shown in Fig. 3 C, utilize yellow photolithographic techniques on this shielding layer 22, form some perforates 221 that are predetermined aspect and communicate with this thin plate 21.
Step D: shown in Fig. 3 D, utilize the mode of anisotropic dry ecthing (Anisotropic dryetching), the thin plate 21 that corresponds to these perforate 221 positions is etched the blind hole 213 that is predetermined depth.Wherein anisotropic dry ecthing (Anisotropic dry etching) can be by by inducing coupled plasma (Inductively Coupled Plasma, ICP) etching (etching), electric paste etching (Plasma etching), ionic formula etching (Ion beametching), dark reactive ion etching (Deep Reactive Ion Etching, DRIE), focused ion beam etching one modes such as (Focus Ion Beam etching) reaches.
Step e: shown in Fig. 3 E, utilize back side thinning (back side thinning) technology, second 212 that grinds thin plate 21 to communicating with this blind hole, this blind hole become connect this first 211 and this micropore of second 212 214.
Step F: shown in Fig. 3 F, remove this shielding layer 22, just finish the processing procedure of micro-hole guide 20 thus.
Certainly, making as above-mentioned processing procedure is to be large-area micro-hole guide, and then recycling following step cuts into large-area micro-hole guide the micro-hole guide of small size:
Step G: shown in Fig. 3 G, the formed micro-hole guide 20 of step F is utilized the mode of cutting, be divided into the bulk of some pre-sizings.
Step H: shown in Fig. 3 H, the micro-hole guide 20 after cutting is linked on the pedestal 23.
In addition, also can be on this micro-hole guide coating insulating material such as silicon dioxide (SiO
2), aluminium oxide (Al
2O
3), titanium dioxide (TiO
2) or other dielectric material that is fit to, make this micro-hole guide increase its insulativity.
Moreover, also can on this micro-hole guide, as poly-acid imide (polyimide) or other macromolecular material that is fit to the structure toughness of this micro-hole guide be strengthened by the coating macromolecular material, or promote the lubricity in the micropore.
Seeing also shown in Fig. 4 A to Fig. 4 I, is a kind of method that can batch make micro-hole guide that the present invention's the 3rd preferred embodiment is provided, and its step includes:
Steps A: shown in Fig. 4 A, get one by the made thin plate 31 of nonmetallic materials, this thin plate 31 is made by silicon (Si) material in present embodiment, and this thin plate 31 can define one first 311 and one and this first 311 opposing second 312.
Step B: shown in Fig. 4 B, on first 311 and second 312 of this thin plate 31, deposit one first oxide skin(coating), 321 (oxide in the mode of plasma enhanced chemical vapor deposition (PECVD) respectively, OX) and one second oxide skin(coating) 322 (oxide, OX) (its oxide is to adopt silicon dioxide (SiO in present embodiment
2)).
Step C: shown in Fig. 4 C, laying a shielding layer 33 these shielding layers on this first oxide skin(coating) 321 is a photoresistance.
Step D: shown in Fig. 4 D, utilize yellow photolithographic techniques, on this shielding layer 33, form some openings 331 that are predetermined aspect.
Step e: shown in Fig. 4 E, will be positioned at first oxide skin(coating), 321 etching offs of these opening 331 correspondence positions, and make this first oxide skin(coating) 321 form the relative through hole 323 of some and this opening 331 with reactive ion etching RIE.
Step F: shown in Fig. 4 F, will be positioned at thin plate 31 etched removals that should through hole 323 positions until this second oxide skin(coating) 322, and make this thin plate 31 form some micropores 313 to induce the etched mode of coupled plasma.
Step G: shown in Fig. 4 G, remove shielding layer 33.
Step H: shown in Fig. 4 H, remove first oxide skin(coating) 321 and second oxide skin(coating) 322.Get final product by micro-hole guide 30 that thin plate and micropore constituted
When the formed micro-hole guide 30 of this step H being cut to predetermined size in order to use as need, then can be by being finished, shown in Fig. 4 I by a cutting program.
In addition, also can be on this micro-hole guide coating insulating material such as silicon dioxide (SiO
2), aluminium oxide (Al
2O
3), titanium dioxide (TiO
2) or other dielectric material that is fit to, make this micro-hole guide increase its insulativity.
Moreover, also can on this micro-hole guide, as poly-acid imide (polyimide) or other macromolecular material that is fit to the structure toughness of this micro-hole guide be strengthened by the coating macromolecular material, or promote the lubricity in the micropore.
See also Fig. 5 A to Fig. 5 L, but be the method for the present invention's the 4th a kind of producing in batch vertical probe clasp micro-hole guide plate that preferred embodiment provides, its step includes:
Steps A: shown in Fig. 5 A, get one by the made thin plate 41 of nonmetallic materials, this thin plate 41 is made by silicon (Si) material in present embodiment, and this thin plate 41 can define one first 411 and one and this first 411 opposing second 412.
Step B: shown in Fig. 5 B, on first 411 and second 412 of this thin plate 41, lay one first oxide skin(coating) 421 and one second oxide skin(coating) 422 respectively.Wherein this oxide is silicon dioxide (SiO
2).
Step C: shown in Fig. 5 C, on this first oxide skin(coating) 421, lay one first shielding layer 43.Wherein this first shielding layer 43 is that (Photo Resist PR) constitutes by photoresist.
Step D: shown in Fig. 5 D, utilize yellow photolithographic techniques on this first shielding layer 43, to form some openings 431 that are predetermined aspect, and this opening 431 is end face and first oxide skin(coating)s 421 that are communicated with this first shielding layer 43.
Step e: shown in Fig. 5 E, utilize first oxide skin(coating), 421 parts that etch process will be positioned at this opening 431 etching off in addition.
Step F: shown in Fig. 5 F, coupled plasma (Inductively CoupledPlasma is induced in utilization, ICP) etching (etching) or other anisotropic dry etching technology (Anisotropic dry etching) (as: electric paste etching Plasma etching), ionic formula etching (Ion beam etching), dark reactive ion etching (Deep ReactiveIon Etching, DRIE), focused ion beam etchings (Focus Ion Beam etching) etc. will etch dark less than total predetermined depth corresponding to the thin plate 41 of these opening 431 positions in addition, the blind hole 46 of width.
Step G: shown in Fig. 5 G, in the mode of low-pressure chemical vapor deposition (LPVCD), deposition mononitride layer (Nitride) 44 on the end face of this first shielding layer 43 and bottom surface in this opening 43 and wall.
Step H: shown in Fig. 5 H, lay one second shielding layer 45 in the top of this first shielding layer 43, and this second shielding layer 45 and utilize the technology of yellow light lithography, in position that should first shielding layer, 43 openings 431 is formed some perforation 451.
Step I: shown in Fig. 5 I, utilize reactive ion etching (RIE) technology, will be positioned at nitride layer 44 etching offs of these opening 431 bottoms; That is, make thin plate 41 positions that are positioned at this opening 431 directly be in communication with the outside.
Step J: shown in Fig. 5 J, utilize and to induce coupled plasma (ICP) etching technique, thin plate 41 blind holes 46 that will be positioned at these opening 431 bottoms deepen its degree of depth until with second oxide skin(coating) 422 on.
Step K: shown in Fig. 5 K, remove first shielding layer 43 and second shielding layer 45.
Step L: shown in Fig. 5 L, remove first oxide skin(coating) 421, second oxide skin(coating) 422 and this nitride layer 44.Thus, get final product to such an extent that the present invention has the micro-hole guide 40 of some micropores 47.
In addition, also can be on this micro-hole guide coating insulating material such as silicon dioxide (SiO
2, aluminium oxide (Al
2O
3), titanium dioxide (TiO
2) or other dielectric material that is fit to, make this micro-hole guide increase its insulativity.
Moreover, also can be on this micro-hole guide coating macromolecular material (as poly-acid imide (polyimide)) or other macromolecular material that is fit to, the structure toughness of this micro-hole guide is strengthened, or promotes the lubricity in the micropore.
See also Fig. 6 A to Fig. 6 K, but be the method for the present invention's the 5th a kind of producing in batch vertical probe clasp micro-hole guide plate that preferred embodiment provides, its step includes:
Step a: as shown in Figure 6A, get one by the made thin plate 51 of nonmetallic materials, this thin plate 51 is made by silicon (Si) material in present embodiment, and this thin plate 51 can define one first 511 and one and this first 511 opposing second 512.
Step B: shown in Fig. 6 B, on first 511 and second 512 of this thin plate 51, lay one first oxide skin(coating) 521 and one second oxide skin(coating) 522 respectively, and on this first oxide skin(coating) 521 and this second oxide skin(coating) 522, lay one first nitride layer 531 and one second nitride layer 532 in the mode of low-pressure chemical vapor deposition (LPVCD) respectively.
Step C: shown in Fig. 6 C, on this second nitride layer 532, lay one first shielding layer 54, and by form the opening 541 of a preset range and position in this first shielding layer 54 by yellow photolithographic techniques, utilize reactive ion etching RIE etching off to be positioned at second nitride layer 532 of this opening 541 again and be positioned at second oxide skin(coating) 522 of this opening 541, thin plate 51 positions that are positioned at this opening 541 are in communication with the outside.
Step D: shown in Fig. 6 D, the etching solution that utilizes potassium hydroxide (KOH) etching solution or other anisotropic wet etching (Anisotropic) to be adopted, the thin plate 51 that is positioned at this opening 541 is carried out the etching of predetermined depth and width and remove, make this thin plate 51 form a depressed area 513 by its second 512; Then, remove this first shielding layer 54 and this first and second nitride layer 531,532.
Step e: shown in Fig. 6 E, utilize first oxide skin(coating) 521 of the processing procedure of yellow light lithography with reactive ion etching (RIE) etching off part position, make this first oxide skin(coating) 521 form some through holes 523 that are predetermined aspect, and this through hole 523 also is communicated with first 512 of this thin plate 51, and two outsides of this first oxide skin(coating) 521 and form the perforation 524 of a larger aperture respectively.
Step F: shown in Fig. 6 F, on this first oxide skin(coating) 521, lay one second shielding layer 55, and on this second shielding layer 55, form some perforation 551 that are communicated with this through hole 523 and counterbore 524, and on the sidewall of this counterbore 524, be laid with the 3rd shielding layer 56 of predetermined thickness simultaneously, but intercepting first 512 of this thin plate 51 fully, the 3rd shielding layer 56 do not communicate with counterbore 524.
Step G: shown in Fig. 6 G, for the thin plate 51 in this through hole 523 and the counterbore 524, to induce coupled plasma (Inductively Coupled Plasma, ICP) etching (etching) or other anisotropic dry etching technology (Anisotropic dry etching) are as electric paste etching (P1asma etching), ionic formula etching (Ion beam etching), dark reactive ion etching (Deep Reactive Ion Etching, DRIE), focused ion beam etching (Focus IonBeam etching) etc. will etch predetermined dark corresponding to the thin plate 51 of this through hole 523 and counterbore 524 positions, the blind hole 57 of width.
Step H: shown in Fig. 6 H, remove second shielding layer 55 and the 3rd shielding layer 56.
Step I: shown in Fig. 6 I, utilize and induce coupled plasma (ICP) etching or other anisotropic dry etching technology, etching is positioned at the thin plate 51 of this through hole 523 and counterbore 524, makes its blind hole deepen its degree of depth to forming micropore 58.
Step J: shown in Fig. 6 J, remove first oxide skin(coating) 521 and second oxide skin(coating) 522.Make to get vertical probe clasp micro-hole guide plate 50 of the present invention, and this example is with the pedestal in the manufacturing also is integrally formed on the micro-hole guide 50 in the back, and be formed with the connecting hole 58 of larger aperture can be for the usefulness that is connected with a foreign object.Wherein Fig. 6 K is the top view of Fig. 6 J.
To sum up institute is old, five preferred embodiments of the invention described above, the technology that it is common, provide a kind of anisotropic etching technology, on vertical probe clasp micro-hole guide plate, mold micropore, can batch manufacturing to save required time and the program of processing procedure, to reduce manufacturing cost; The machining precision of micropore is preferable simultaneously, and the aperture of micropore and spacing can more be dwindled, and also is fit to make large-area micro-hole guide and can make the micro-hole guide with temperature compensation benefit, makes the present invention reach maximum economic surcharge.
Claims (23)
1. but the method for a producing in batch vertical probe clasp micro-hole guide plate is characterized in that, includes following steps:
Step 1: the thin plate of getting nonmetallic materials;
Step 2: laying one possesses first shielding layer of predetermined aspect and number of openings on this nonmetal thin plate;
Step 3:, on the thin plate of nonmetallic materials, mold most micropores with the anisotropic etching method;
Step 4:, be divided into the bulk of a plurality of pre-sizings with the thin plate cutting mode after the above-mentioned moulding;
Step 5: the thin plate that will cut apart is connected on the pedestal;
This micro-hole guide provides Vertrical probe and limits in lateral space, and Vertrical probe is moved in the micropore depth direction, to reach the electrical purpose of the electronic assembly test point of surveying ad-hoc location.
2. but according to the method for the described producing in batch vertical probe clasp micro-hole guide plate of claim 1, it is characterized in that described thin plate is made by silicon, gallium nitride, gallium arsenide or one of them material of indium phosphorus.
3. but according to the method for the described producing in batch vertical probe clasp micro-hole guide plate of claim 1, it is characterized in that described thin plate is by being applicable to that the semiconductor material with the anisotropic etching fabrication techniques is made.
4. but according to the method for the described producing in batch vertical probe clasp micro-hole guide plate of claim 1, it is characterized in that described thin plate is made by glass or stupalith.
5. but according to the method for the described producing in batch vertical probe clasp micro-hole guide plate of claim 1, it is characterized in that described thin plate is by being applicable to that the non-conductive material with the anisotropic etching fabrication techniques is made.
6. but according to the method for the described producing in batch vertical probe clasp micro-hole guide plate of claim 1, it is characterized in that described first shielding layer is made by photoresist.
7. but according to the method for the described producing in batch vertical probe clasp micro-hole guide plate of claim 1, it is characterized in that this first shielding layer is to form opening by yellow photolithographic techniques.
8. but according to the method for the described producing in batch vertical probe clasp micro-hole guide plate of claim 1, it is characterized in that after step 3, the coating insulating material is on this micro-hole guide.
9. but according to the method for the described producing in batch vertical probe clasp micro-hole guide plate of claim 8, it is characterized in that this insulating material is that silicon dioxide, aluminium oxide, titanium dioxide are one kind of.
10. but according to the method for the described producing in batch vertical probe clasp micro-hole guide plate of claim 1, it is characterized in that after step 3, the coating macromolecular material is on this micro-hole guide.
11. the method according to the described vertical probe clasp micro-hole guide plate that can batch manufacturing of claim 10 is characterized in that described macromolecular material is a polyimide.
12. but according to the method for the described producing in batch vertical probe clasp micro-hole guide plate of claim 1, it is characterized in that described step 2 more includes following steps:
Deposition one etch stop layer on this thin plate;
On this etch stop layer, laying one possesses first shielding layer of predetermined aspect opening;
Utilize the reactive ion etching etching off to be positioned at, make this etch stop layer form some perforates corresponding to this opening to etch stop layer that should the first shielding layer aperture position;
Remove first shielding layer;
Wherein, step 3 more includes following steps:
Utilize the anisotropic wet etching will be, and form some micropores thin plate that should position of opening etching off in addition;
Remove etch stop layer; Get final product micro-hole guide.
13. but, it is characterized in that described thin plate can define one first and one and this first opposing second according to the method for the described producing in batch vertical probe clasp micro-hole guide plate of claim 12; Go up deposition one first etch stop layer for first of this thin plate, go up deposition one second etch stop layer for second; This first shielding layer is to be laid on this first etch stop layer, and this perforate is to be formed on this first etch stop layer.
14. but, it is characterized in that described anisotropic wet etching is to adopt potassium hydroxide, ethylene diamine pyrocatechol, Tetramethylammonium hydroxide or diamine etching solution according to the method for the described producing in batch vertical probe clasp micro-hole guide plate of claim 12.
15. but according to the method for the described producing in batch vertical probe clasp micro-hole guide plate of claim 1, it is characterized in that described step 3 also includes following steps:
Utilize the anisotropic dry ecthing will be, and form some micropores thin plate that should aperture position etching off in addition;
Get final product micro-hole guide.
16. but according to the method for the described producing in batch vertical probe clasp micro-hole guide plate of claim 15, it is characterized in that described step 3 more includes following steps:
To etch the blind hole of predetermined depth to thin plate that should aperture position with the anisotropic dry ecthing;
Utilize thinning technology in the back side to grind thin plate, make its blind hole become the micropore of perforation;
Get final product micro-hole guide.
17. but according to the method for the described producing in batch vertical probe clasp micro-hole guide plate of claim 15, it is characterized in that described anisotropic dry ecthing is for inducing coupled plasma etching, electric paste etching, ionic formula etching, dark reactive ion etching or focused ion beam etching.
18. but, it is characterized in that described thin plate can define one first and one and this first opposing second according to the method for the described producing in batch vertical probe clasp micro-hole guide plate of claim 15; This first shielding layer is to be laid on this first.
19. but according to the method for the described producing in batch vertical probe clasp micro-hole guide plate of claim 15, it is characterized in that described step 2 more includes following steps:
Deposition monoxide layer on this thin plate;
Laying one possesses first shielding layer of predetermined aspect and number of openings on this oxide skin(coating);
To be positioned at the oxide skin(coating) etching off of this opening correspondence position with reactive ion etching, and make this oxide skin(coating) form some through holes relative with this opening;
20. but according to the method for the described producing in batch vertical probe clasp micro-hole guide plate of claim 19, it is characterized in that described oxide skin(coating) is made by earth silicon material.
21. but according to the method for the described producing in batch vertical probe clasp micro-hole guide plate of claim 15, it is characterized in that described step 3 more includes following steps:
Utilize the anisotropic dry ecthing will etch the blind hole of pre-depthkeeping, width corresponding to the thin plate of this aperture position;
Deposition mononitride layer on the end face of this first shielding layer and this opening inner face;
Lay one second shielding layer in this first shielding layer top, and this second shielding layer is formed with perforation to position that should the first shielding layer opening;
Utilize the reactive ion etching technology, will be positioned at the nitride layer etching off of this open bottom;
The thin plate blind hole of utilizing the anisotropic dry etching technology will be positioned at this open bottom is deepened its degree of depth;
Remove first shielding layer and second shielding layer;
Remove this nitride layer; Get final product micro-hole guide.
22. but, it is characterized in that described thin plate can define one first and one and this first opposing second according to the method for the described producing in batch vertical probe clasp micro-hole guide plate of claim 21; Go up deposition one first oxide skin(coating) for first of this thin plate, go up deposition one second oxide skin(coating) for second; This first shielding layer is to be laid on this first oxide skin(coating).
23. but, it is characterized in that described nitride layer is that the mode with low-pressure chemical vapor deposition deposits and forms according to the method for the described producing in batch vertical probe clasp micro-hole guide plate of claim 21.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200510129020XA CN100492017C (en) | 2005-11-29 | 2005-11-29 | Method for producing batch vertical probe clasp micro-hole guide plate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200510129020XA CN100492017C (en) | 2005-11-29 | 2005-11-29 | Method for producing batch vertical probe clasp micro-hole guide plate |
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| Publication Number | Publication Date |
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| CN1979176A CN1979176A (en) | 2007-06-13 |
| CN100492017C true CN100492017C (en) | 2009-05-27 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI577992B (en) * | 2012-08-01 | 2017-04-11 | 日本電子材料股份有限公司 | A guide plate for a probe card, and a guide plate for a probe card |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103896206B (en) * | 2014-04-09 | 2015-12-02 | 华中科技大学 | The Bulk micro machining worn is carved based on silicon chip |
| CN109507456A (en) * | 2017-09-15 | 2019-03-22 | 中华精测科技股份有限公司 | Probe unit and its guide plate |
-
2005
- 2005-11-29 CN CNB200510129020XA patent/CN100492017C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI577992B (en) * | 2012-08-01 | 2017-04-11 | 日本電子材料股份有限公司 | A guide plate for a probe card, and a guide plate for a probe card |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1979176A (en) | 2007-06-13 |
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