CN1004845B - 半导体器件 - Google Patents
半导体器件 Download PDFInfo
- Publication number
- CN1004845B CN1004845B CN85108134.7A CN85108134A CN1004845B CN 1004845 B CN1004845 B CN 1004845B CN 85108134 A CN85108134 A CN 85108134A CN 1004845 B CN1004845 B CN 1004845B
- Authority
- CN
- China
- Prior art keywords
- type
- semiconductor device
- zone
- type epitaxial
- pnp transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 239000012535 impurity Substances 0.000 claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 32
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- 239000010703 silicon Substances 0.000 claims description 32
- 238000000407 epitaxy Methods 0.000 claims description 24
- 239000000758 substrate Substances 0.000 abstract description 10
- 238000009792 diffusion process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000002650 habitual effect Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8224—Bipolar technology comprising a combination of vertical and lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0821—Combination of lateral and vertical transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59232870A JPH0638476B2 (ja) | 1984-11-05 | 1984-11-05 | 半導体装置 |
JP232870/84 | 1984-11-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN85108134A CN85108134A (zh) | 1986-07-02 |
CN1004845B true CN1004845B (zh) | 1989-07-19 |
Family
ID=16946115
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN85108134.7A Expired CN1004845B (zh) | 1984-11-05 | 1985-11-02 | 半导体器件 |
Country Status (10)
Country | Link |
---|---|
JP (1) | JPH0638476B2 (de) |
KR (1) | KR940005447B1 (de) |
CN (1) | CN1004845B (de) |
AT (1) | AT395272B (de) |
AU (1) | AU572005B2 (de) |
CA (1) | CA1254671A (de) |
DE (1) | DE3539208C2 (de) |
FR (1) | FR2572850B1 (de) |
GB (1) | GB2167231B (de) |
NL (1) | NL194711C (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6768183B2 (en) * | 2001-04-20 | 2004-07-27 | Denso Corporation | Semiconductor device having bipolar transistors |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1520515A (fr) * | 1967-02-07 | 1968-04-12 | Radiotechnique Coprim Rtc | Circuits intégrés comportant des transistors de types opposés et leurs procédésde fabrication |
JPS5710964A (en) * | 1980-06-25 | 1982-01-20 | Fujitsu Ltd | Manufacture of semiconductor device |
EP0093304B1 (de) * | 1982-04-19 | 1986-01-15 | Matsushita Electric Industrial Co., Ltd. | Integrierte Halbleiterschaltung und Verfahren zur Herstellung derselben |
JPS58212159A (ja) * | 1982-06-02 | 1983-12-09 | Matsushita Electric Ind Co Ltd | 半導体集積回路装置の製造方法 |
-
1984
- 1984-11-05 JP JP59232870A patent/JPH0638476B2/ja not_active Expired - Lifetime
-
1985
- 1985-10-15 KR KR1019850007581A patent/KR940005447B1/ko not_active IP Right Cessation
- 1985-10-28 CA CA000493970A patent/CA1254671A/en not_active Expired
- 1985-10-30 GB GB08526749A patent/GB2167231B/en not_active Expired
- 1985-11-02 CN CN85108134.7A patent/CN1004845B/zh not_active Expired
- 1985-11-04 AU AU49315/85A patent/AU572005B2/en not_active Expired
- 1985-11-05 AT AT0318985A patent/AT395272B/de not_active IP Right Cessation
- 1985-11-05 NL NL8503033A patent/NL194711C/nl not_active IP Right Cessation
- 1985-11-05 DE DE3539208A patent/DE3539208C2/de not_active Expired - Fee Related
- 1985-11-05 FR FR8516362A patent/FR2572850B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2572850B1 (fr) | 1988-09-09 |
NL8503033A (nl) | 1986-06-02 |
JPH0638476B2 (ja) | 1994-05-18 |
CN85108134A (zh) | 1986-07-02 |
NL194711B (nl) | 2002-08-01 |
AU4931585A (en) | 1986-05-15 |
DE3539208A1 (de) | 1986-05-15 |
GB2167231A (en) | 1986-05-21 |
JPS61111575A (ja) | 1986-05-29 |
FR2572850A1 (fr) | 1986-05-09 |
GB8526749D0 (en) | 1985-12-04 |
KR860004472A (ko) | 1986-06-23 |
DE3539208C2 (de) | 1998-04-09 |
AU572005B2 (en) | 1988-04-28 |
GB2167231B (en) | 1988-03-02 |
AT395272B (de) | 1992-11-10 |
CA1254671A (en) | 1989-05-23 |
NL194711C (nl) | 2002-12-03 |
KR940005447B1 (ko) | 1994-06-18 |
ATA318985A (de) | 1992-03-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5066602A (en) | Method of making semiconductor ic including polar transistors | |
US4283236A (en) | Method of fabricating lateral PNP transistors utilizing selective diffusion and counter doping | |
US4210925A (en) | I2 L Integrated circuit and process of fabrication | |
US3770519A (en) | Isolation diffusion method for making reduced beta transistor or diodes | |
JPH05275439A (ja) | 外部ベース抵抗および雑音の低いバイポーラ・トランジスタ | |
GB1533156A (en) | Semiconductor integrated circuits | |
US3840409A (en) | Insulating layer pedestal transistor device and process | |
CN1004845B (zh) | 半导体器件 | |
US3920484A (en) | Method of manufacturing semiconductor device | |
US3510736A (en) | Integrated circuit planar transistor | |
EP0075678B1 (de) | Halbleiteranordnung mit Schottky-Diode | |
US3473975A (en) | Semiconductor devices | |
JP2643524B2 (ja) | バイポーラ集積回路装置 | |
Geis et al. | Use of zone-melting recrystallization to fabricate a three-dimensional structure incorporating power bipolar and field-effect transistors | |
JP3327658B2 (ja) | 縦型バイポーラトランジスタの製造方法 | |
JPS63175463A (ja) | バイmos集積回路の製造方法 | |
JPS6212665B2 (de) | ||
JPH03116774A (ja) | 半導体装置の製造方法 | |
Morcom et al. | I 2 L Integrated circuit and process of fabrication | |
JPH0235470B2 (de) | ||
JPS63164356A (ja) | 半導体集積回路の製造方法 | |
JPS58169970A (ja) | 半導体装置およびその製造方法 | |
JPS57154871A (en) | Semiconductor device and manufacture thereof | |
JPH06196638A (ja) | 半導体装置 | |
JPS61292355A (ja) | 半導体集積回路 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C13 | Decision | ||
GR02 | Examined patent application | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CX01 | Expiry of patent term |