CN1004845B - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN1004845B
CN1004845B CN85108134.7A CN85108134A CN1004845B CN 1004845 B CN1004845 B CN 1004845B CN 85108134 A CN85108134 A CN 85108134A CN 1004845 B CN1004845 B CN 1004845B
Authority
CN
China
Prior art keywords
type
semiconductor device
zone
type epitaxial
pnp transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CN85108134.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN85108134A (zh
Inventor
植木善夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN85108134A publication Critical patent/CN85108134A/zh
Publication of CN1004845B publication Critical patent/CN1004845B/zh
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H01L21/8224—Bipolar technology comprising a combination of vertical and lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
CN85108134.7A 1984-11-05 1985-11-02 半导体器件 Expired CN1004845B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59232870A JPH0638476B2 (ja) 1984-11-05 1984-11-05 半導体装置
JP232870/84 1984-11-05

Publications (2)

Publication Number Publication Date
CN85108134A CN85108134A (zh) 1986-07-02
CN1004845B true CN1004845B (zh) 1989-07-19

Family

ID=16946115

Family Applications (1)

Application Number Title Priority Date Filing Date
CN85108134.7A Expired CN1004845B (zh) 1984-11-05 1985-11-02 半导体器件

Country Status (10)

Country Link
JP (1) JPH0638476B2 (de)
KR (1) KR940005447B1 (de)
CN (1) CN1004845B (de)
AT (1) AT395272B (de)
AU (1) AU572005B2 (de)
CA (1) CA1254671A (de)
DE (1) DE3539208C2 (de)
FR (1) FR2572850B1 (de)
GB (1) GB2167231B (de)
NL (1) NL194711C (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6768183B2 (en) * 2001-04-20 2004-07-27 Denso Corporation Semiconductor device having bipolar transistors

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1520515A (fr) * 1967-02-07 1968-04-12 Radiotechnique Coprim Rtc Circuits intégrés comportant des transistors de types opposés et leurs procédésde fabrication
JPS5710964A (en) * 1980-06-25 1982-01-20 Fujitsu Ltd Manufacture of semiconductor device
EP0093304B1 (de) * 1982-04-19 1986-01-15 Matsushita Electric Industrial Co., Ltd. Integrierte Halbleiterschaltung und Verfahren zur Herstellung derselben
JPS58212159A (ja) * 1982-06-02 1983-12-09 Matsushita Electric Ind Co Ltd 半導体集積回路装置の製造方法

Also Published As

Publication number Publication date
FR2572850B1 (fr) 1988-09-09
NL8503033A (nl) 1986-06-02
JPH0638476B2 (ja) 1994-05-18
CN85108134A (zh) 1986-07-02
NL194711B (nl) 2002-08-01
AU4931585A (en) 1986-05-15
DE3539208A1 (de) 1986-05-15
GB2167231A (en) 1986-05-21
JPS61111575A (ja) 1986-05-29
FR2572850A1 (fr) 1986-05-09
GB8526749D0 (en) 1985-12-04
KR860004472A (ko) 1986-06-23
DE3539208C2 (de) 1998-04-09
AU572005B2 (en) 1988-04-28
GB2167231B (en) 1988-03-02
AT395272B (de) 1992-11-10
CA1254671A (en) 1989-05-23
NL194711C (nl) 2002-12-03
KR940005447B1 (ko) 1994-06-18
ATA318985A (de) 1992-03-15

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C06 Publication
PB01 Publication
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SE01 Entry into force of request for substantive examination
C13 Decision
GR02 Examined patent application
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CX01 Expiry of patent term