CN100468695C - 改善多晶硅缺陷的方法 - Google Patents
改善多晶硅缺陷的方法 Download PDFInfo
- Publication number
- CN100468695C CN100468695C CNB2006101190583A CN200610119058A CN100468695C CN 100468695 C CN100468695 C CN 100468695C CN B2006101190583 A CNB2006101190583 A CN B2006101190583A CN 200610119058 A CN200610119058 A CN 200610119058A CN 100468695 C CN100468695 C CN 100468695C
- Authority
- CN
- China
- Prior art keywords
- polysilicon
- interlayer dielectric
- dielectric layer
- layer
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 105
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 105
- 238000000034 method Methods 0.000 title claims abstract description 72
- 230000007547 defect Effects 0.000 title claims abstract description 19
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 60
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 60
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 238000004140 cleaning Methods 0.000 claims abstract description 20
- 239000007788 liquid Substances 0.000 claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- 239000010410 layer Substances 0.000 claims description 228
- 239000011229 interlayer Substances 0.000 claims description 97
- 238000005530 etching Methods 0.000 claims description 45
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 23
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical group [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000005368 silicate glass Substances 0.000 claims description 16
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical group CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 15
- 238000001312 dry etching Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 238000005229 chemical vapour deposition Methods 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 2
- 239000007792 gaseous phase Substances 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 22
- 239000003990 capacitor Substances 0.000 description 12
- 239000000243 solution Substances 0.000 description 11
- 230000002950 deficient Effects 0.000 description 10
- 238000004380 ashing Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000008187 granular material Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229940090044 injection Drugs 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (13)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006101190583A CN100468695C (zh) | 2006-12-04 | 2006-12-04 | 改善多晶硅缺陷的方法 |
US11/852,936 US20080132076A1 (en) | 2006-12-04 | 2007-09-10 | Method for avoiding polysilicon defect |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006101190583A CN100468695C (zh) | 2006-12-04 | 2006-12-04 | 改善多晶硅缺陷的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101197310A CN101197310A (zh) | 2008-06-11 |
CN100468695C true CN100468695C (zh) | 2009-03-11 |
Family
ID=39476351
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006101190583A Expired - Fee Related CN100468695C (zh) | 2006-12-04 | 2006-12-04 | 改善多晶硅缺陷的方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20080132076A1 (zh) |
CN (1) | CN100468695C (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103151270A (zh) * | 2013-02-26 | 2013-06-12 | 上海宏力半导体制造有限公司 | 沟槽式金属氧化物半导体肖特基势垒器件制造方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5711851A (en) * | 1996-07-12 | 1998-01-27 | Micron Technology, Inc. | Process for improving the performance of a temperature-sensitive etch process |
JP3941133B2 (ja) * | 1996-07-18 | 2007-07-04 | 富士通株式会社 | 半導体装置およびその製造方法 |
TW406409B (en) * | 1999-03-08 | 2000-09-21 | United Microelectronics Corp | Manufacture method of fully automatic alignment transistor and memory |
JP4057770B2 (ja) * | 2000-10-11 | 2008-03-05 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
US6653159B2 (en) * | 2001-05-11 | 2003-11-25 | Au Optronics Corp. | Method of fabricating a thin film transistor liquid crystal display |
US6815331B2 (en) * | 2001-05-17 | 2004-11-09 | Samsung Electronics Co., Ltd. | Method for forming metal wiring layer of semiconductor device |
JP4911838B2 (ja) * | 2001-07-06 | 2012-04-04 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
AU2002353145A1 (en) * | 2001-12-13 | 2003-06-30 | Applied Materials, Inc. | Self-aligned contact etch with high sensitivity to nitride shoulder |
KR100483594B1 (ko) * | 2002-12-27 | 2005-04-15 | 매그나칩 반도체 유한회사 | 반도체 소자의 금속배선 형성방법 |
KR100557994B1 (ko) * | 2003-07-25 | 2006-03-06 | 삼성전자주식회사 | 매립 확장 콘택홀을 갖는 반도체 장치 및 그 제조방법 |
KR100555512B1 (ko) * | 2003-07-31 | 2006-03-03 | 삼성전자주식회사 | 폴리실리콘 식각 마스크를 이용한 반도체 소자의 제조방법 |
JP2005064119A (ja) * | 2003-08-08 | 2005-03-10 | Renesas Technology Corp | 半導体装置の製造方法 |
JP4499390B2 (ja) * | 2003-09-09 | 2010-07-07 | パナソニック株式会社 | 半導体装置及びその製造方法 |
KR100611777B1 (ko) * | 2003-12-22 | 2006-08-11 | 주식회사 하이닉스반도체 | 반도체소자 제조 방법 |
KR100546406B1 (ko) * | 2004-04-10 | 2006-01-26 | 삼성전자주식회사 | 상변화 메모리 소자 제조 방법 |
KR100568257B1 (ko) * | 2004-07-29 | 2006-04-07 | 삼성전자주식회사 | 듀얼 다마신 배선의 제조방법 |
TWI281231B (en) * | 2004-12-20 | 2007-05-11 | Hynix Semiconductor Inc | Method for forming storage node of capacitor in semiconductor device |
KR100718255B1 (ko) * | 2005-03-05 | 2007-05-15 | 삼성전자주식회사 | 디램 장치 및 그 제조 방법 |
US7575990B2 (en) * | 2005-07-01 | 2009-08-18 | Macronix International Co., Ltd. | Method of forming self-aligned contacts and local interconnects |
KR100661217B1 (ko) * | 2005-12-29 | 2006-12-22 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조 방법 |
US20080014739A1 (en) * | 2006-06-28 | 2008-01-17 | Texas Instruments Incorporated | Silicon nitride/oxygen doped silicon carbide etch stop bi-layer for improved interconnect reliability |
-
2006
- 2006-12-04 CN CNB2006101190583A patent/CN100468695C/zh not_active Expired - Fee Related
-
2007
- 2007-09-10 US US11/852,936 patent/US20080132076A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CN101197310A (zh) | 2008-06-11 |
US20080132076A1 (en) | 2008-06-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20111114 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090311 Termination date: 20181204 |
|
CF01 | Termination of patent right due to non-payment of annual fee |