CN100459426C - 单个封装多芯片rf功率放大器 - Google Patents

单个封装多芯片rf功率放大器 Download PDF

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CN100459426C
CN100459426C CNB2003801060211A CN200380106021A CN100459426C CN 100459426 C CN100459426 C CN 100459426C CN B2003801060211 A CNB2003801060211 A CN B2003801060211A CN 200380106021 A CN200380106021 A CN 200380106021A CN 100459426 C CN100459426 C CN 100459426C
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lead
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CN1726638A (zh
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R·S·彭格利
S·M·伍德
J·P·奎恩
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Wolfspeed Inc
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Abstract

公开了一种多芯片功率放大器，其包含多个其中每个芯片是晶体管放大器的芯片(20-23)和在其中安装所有半导体芯片的外壳(36)。多个输入导线从外部延伸到外壳内，并且多个输出导线从外壳内延伸到外部。多个第一匹配网络(38)将半导体芯片耦合到输入导线而多个第二匹配网络(40)将每个半导体芯片耦合到输出导线，由此每个芯片具有其自己的输入导线和输出导线。通过给单个外壳内的所有放大器芯片提供匹配网络，这些匹配网络在外壳内并将芯片耦合到输入和输出导线，制造成本被减小而且在安装衬底上的全部封装覆盖区被减小。此外，在外壳内的芯片的邻近减小了半导体芯片中的信号中的相位差。

Description

单个封装多芯片RF功率放大器
相关申请的交叉参考
本申请涉及2002年1月28日提交的共同未决的系列号为10/059,866的申请(现在为U.S.专利6,700,444)“N-WAY RF POWERAMPLIFIER WITH INCREASED BACKOFF POWER AND POWER ADDEDEFFICIENCY(具有增加的补偿功率和增加功率的效率的N路RF功率放大器)”，其被委托给当前代理人，并在此出于所有意图被引入。
发明背景
本发明通常涉及多芯片RF功率放大器，并且更特别地本发明涉及封装多芯片RF功率放大器。
半导体功率放大器典型地包含多个半导体芯片，其中每个芯片包含诸如硅横向扩散的MOS场效应晶体管(LDMOSFET)的晶体管放大器。晶体管放大器可以并行操作以提供增加的功率放大器输出，或晶体管放大器可以包含用于最大补偿功率操作的主放大器或载波放大器和多个辅助放大器或峰值放大器，这些多个辅助放大器或峰值放大器被适当偏置以开始顺序地操作用于增加功率需求。这样的功率放大器在上述共同未决的序列号为10/059,866的申请中被描述。
传统的实践是在外壳中单独封装每个晶体管放大器，然后通过阻抗匹配网络和信号分配器将所封装的晶体管放大器连接到公共输入。然而，使用单独的芯片封装增加制造成本并增加支撑衬底上的整个封装覆盖区。此外，多个封装的安装必要地增加晶体管间距和晶体管之间的信号相位差。
发明简介
依据本发明，多个单独的晶体管放大器芯片被安装在单个封装内，其中每个芯片具有其自己的输入和输出导线。这些芯片可以具有不等的***和栅极宽度，如经常在Doherty放大器中使用的那样，并且可以为每个芯片的输入、输出、和偏置导线而在封装内对其进行预先匹配。然后，预先匹配的晶体管电路小片可被用于诸如针对Doherty配置中的载波和峰值放大器的高效放大器设计中。
本发明提高制造效率和减小全部封装覆盖区。此外，晶体管电路小片是邻近的，由此最小化多个晶体管中的信号中的相位差。对于Doherty应用，该封装必须具有两倍的导线数量，因为在该封装中存在芯片。这允许每个晶体管在封装内单独预先匹配和单独地偏置。
当结合附图时，本发明及其目标和特征从以下详细描述和从属权利要求中变得更明显。
附图简述
图1是如共同未决的序列号为10/059,866的申请中所公开的RF功率放大器的功能方框图，该RF功率放大器用于在大的功率范围上放大RF信号并使用多个单独封装的功率放大器。
图2是依据本发明实施例、与图1的放大器等效的功率放大器的平面图。
图3是被连接为四路Doherty放大器的图2的功率放大器的功能方框图。
发明详细描述
图1是上述共同未决的序列号为10/059,866的申请中所描述的功率放大器的功能方框图，该功率放大器使用多个单独封装的包括载波放大器20和三个峰值放大器21、22、23的功率放大器芯片，其中峰值放大器经过90°变压器24、25、26连接到输出负载28。90°变压器30将四路分配器32连接到载波放大器20。通过将每个峰值放大器上的DC偏置设置为合适的值，这些峰值放大器允许Doherty效应被扩展。对于每个被增加到第一个峰值放大器之上的峰值放大器，将在功率范围上相应增加6dB，在该功率范围上将保持峰值效率。该四路放大器将有效功率的范围扩展到18dB的理论值。在使用调制方案的数字通信***中，这样的扩展是很重要的，其中峰值与平均功率比可高达13dB。120瓦特的峰值放大器可以由每路(载波放大器和三个峰值放大器)利用30瓦特的晶体管的四路Doherty装置来提供。
单独的功率放大器不必是同样的尺寸并且芯片可以具有不等的***或栅极宽度。然而，每个功率放大器必须阻抗匹配到输入并适当偏置，以致可以实现放大器对于宽的功率操作范围的连续操作。
图2是依据本发明的封装的平面图，在该封装中多个功率放大器芯片20-23被安装在外壳36内。每个芯片具有其自己的输入导线(RF输入1-RF输入4)和输出导线(RF输出1-RF输出4)。此外，每个晶体管芯片20-23具有其自己的阻抗匹配，针对输入通常示为38，而针对输出通常示为40，并且既针对FET的栅极又针对FET的漏极(双极器件的基极和集电极)单独偏置。因而，对于Doherty装置，单独的晶体管可以如载波放大器和峰值放大器那样分别不同地和最优地被匹配。
图3以四路Doherty放大器举例说明图2的四路晶体管封装36。RF输入信号通过两路分配器50、52、54被施加以得出四个输入信号，这四个输入信号通过阻抗匹配电路56被施加到封装36的RF输入。该封装放大器36的输出通过通常示为58的阻抗匹配电路被施加，并合计为RF输出60。
使用具有在每个放大器芯片的外壳中提供的单独导线的多晶体管芯片放大器的单个外壳不仅降低制造成本，而且芯片的邻近最小化了晶体管之间的相位差。另外，单个外壳减少了支撑衬底上的放大器覆盖区。尽管已经描述了四芯片Doherty放大器，但是本发明可容易地应用到具有载波放大器和单个峰值放大器的Doherty放大器中。此外，本发明可应用于多级放大器晶体管。本发明可以使用包括硅双极、GaAs、MESFET、InGaHBT、SiC MESFET、和GaN HEMT的广泛的半导体技术在宽的功率等级和频率范围上实现。
因而，尽管本发明已经参考具体实施例被描述，但是该描述是本发明的示例而不被构造为限制本发明。对于本领域的技术人员，各种修改和应用可以发生，而不脱离如由所附的权利要求定义的本发明的真正的精神和范围。

Claims (20)

1.多芯片功率放大器，其包含：
a)具有多个输入导线和多个输出导线的外壳，所述多个输入导线是从外部延伸到外壳内，所述多个输出导线是从外壳内延伸到外部，
b)多个安装在外壳中的半导体芯片，每个芯片包含晶体管放大器，
c)多个第一匹配网络，每个匹配网络在该外壳中并将半导体芯片耦合到所述输入导线，以及
d)多个第二匹配网络，每个匹配网络在该外壳中并将半导体芯片耦合到所述输出导线，由此每个芯片具有其自己的输入导线和输出导线。
2.根据权利要求1所定义的多芯片功率放大器，其中，每个芯片包含：具有源极、漏极和栅极元件的场效应晶体管，将栅极元件耦合到输入导线的第一匹配网络以及将漏极元件耦合到输出导线的第二匹配网络。
3.根据权利要求2所定义的多芯片功率放大器，其中，所述场效应晶体管是硅LDMOSFET。
4.根据权利要求2所定义的多芯片功率放大器，其中，所述场效应晶体管包含MESFET。
5.根据权利要求1所定义的多芯片功率放大器，其中，每个芯片包含：
具有集电极、基极和发射极元件的双极晶体管，将基极元件耦合到输入导线的第一匹配网络以及将集电极元件耦合到输出导线的第二匹配网络。
6.根据权利要求5所定义的多芯片功率放大器，其中，所述双极晶体管包含硅双极晶体管。
7.根据权利要求5所定义的多芯片功率放大器，其中，所述双极晶体管包含III-V异质结双极晶体管。
8.根据权利要求2所定义的多芯片功率放大器，其中，所述场效应晶体管包含HEMT。
9.根据权利要求1所定义的多芯片功率放大器，其中，该功率放大器是具有一个提供载波放大器的芯片和至少一个提供峰值放大器的芯片的Doherty放大器。
10.根据权利要求9所定义的多芯片功率放大器，其中，多个芯片提供峰值放大器，每个峰值放大器被偏置来连续启动以根据输入信号的振幅放大输入信号。
11.放大器电路，其包含：
a)将输入信号分为N个信号的信号分配器，
b)包含N个晶体管放大器芯片的外壳，其中安装有N个输入导线和N个输出导线，所述N个输入导线是从外部延伸到外壳内，所述N个输出导线是从外壳内延伸到外部，
c)将N个信号耦合到所述N个输入导线的输入耦合装置，
d)在外壳内的输入匹配网络，将所述N个输入导线的每个逐个耦合到N个晶体管放大器芯片中的一个，以及
e)在外壳内的N个输出匹配网络，将所述N个输出导线的每个逐个耦合到N个晶体管放大器芯片中的一个。
12.根据权利要求11所定义的放大器电路，其中，每个晶体管放大器芯片包含：具有源极、漏极和栅极元件的场效应晶体管，将栅极元件耦合到输入导线的第一匹配网络和将漏极元件耦合到输出导线的第二匹配网络。
13.根据权利要求12所定义的放大器电路，其中，所述场效应晶体管是硅LDMOSFET。
14.根据权利要求12所定义的放大器电路，其中，所述场效应晶体管包含MESFET。
15.根据权利要求11所定义的放大器电路，其中，每个晶体管放大器芯片包含：具有集电极、基极和发射极元件的双极晶体管，将基极元件耦合到输入导线的第一匹配网络和将集电极元件耦合到输出导线的第二匹配网络。
16.根据权利要求15所定义的放大器电路，其中，所述双极晶体管包含硅双极晶体管。
17.根据权利要求15所定义的放大器电路，其中，所述双极晶体管包含III-V异质结双极晶体管。
18.根据权利要求12所定义的放大器电路，其中，所述场效应晶体管包含HEMT。
19.根据权利要求11所定义的放大器电路，其中，所述放大器包括具有一个提供载波放大器的晶体管放大器芯片和至少一个提供峰值放大器的晶体管放大器芯片的Doherty放大器。
20.根据权利要求19所定义的放大器电路，其中，多个芯片提供峰值放大器，峰值放大器被偏置来连续启动以根据输入信号的振幅放大输入信号。
CNB2003801060211A 2002-12-13 2003-11-24 单个封装多芯片rf功率放大器 Expired - Lifetime CN100459426C (zh)

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