Background technology
Along with the develop rapidly of very lagre scale integrated circuit (VLSIC) ULSI (Ultra Large Scale Integration), integrated circuit fabrication process becomes and becomes increasingly complex with meticulous.In order to improve integrated level, reduce manufacturing cost, the characteristic size of element (Feature Size) constantly diminishes, number of elements in the chip unit are constantly increases, plane routing has been difficult to satisfy the requirement that the element high density distributes, can only adopt polylaminate wiring technique, utilize the vertical space of chip, further improve the integration density of device.But the application of polylaminate wiring technique can cause silicon chip surface uneven, and is extremely unfavorable to graphic making.For this reason, need carry out planarization (Planarization) to irregular wafer surface handles.At present, chemical mechanical milling method (CMP, ChemicalMechanical Polishing) be the best approach of reaching overall planarization, especially after semiconductor fabrication process entered sub-micron (sub-micron) field, cmp had become an indispensable manufacture craft technology.
Chemical mechanical milling method (CMP) is the technical process of a complexity, and it is that its device therefor often is called grinder or polishing machine by the relative motion planarization wafer surface between wafer and the grinding pad.During grinding, the to be ground of the wafer that will grind faces down attached on the grinding head, to be ground the counterrotating grinding pad of contact of wafer, the downforce that grinding head provides is pressed onto wafer on the grinding pad, post when rotating under the drive of grinding pad at motor when the surface, grinding head also relatively rotates.Simultaneously, lapping liquid is transported on the grinding pad by lapping liquid supply pipe (tube), and be evenly distributed on the grinding pad by centrifugal force, chemical composition in this lapping liquid with by grinding wafers generation chemical reaction, insoluble matter is converted into lyotrope matter (chemical reaction process), by mechanical friction these lyotropes are removed from polished surface then, realize the surfacing of wafer being removed, reach overall planarization effect in conjunction with mechanism and chemical reaction.The remarkable quality problems that cmp (CMP) brings are surface scratches (Scratch), thin layer after CMP handles tends to there is scratch on the surface, the scratch of these little and difficult discoveries easily causes short circuit or open circuit phenomenon at intermetallic, reduces the rate of finished products of product greatly.
Application number is to disclose a kind of chemical and mechanical grinding method that reduces the tungsten metal of scratch in 02120608.2 the Chinese patent, this method is ground by acid tungsten lapping liquid and the oxide lapping liquid that leading portion and back segment in grinding have adopted standard respectively, has realized the minimizing of tungsten metal grinding surface scratch.But, use the surperficial scratch after still may there be grinding in wafer surface after this method because it unresolvedly needs to clean fully problem of the lapping liquid of removing the last grinding stage in new grinding stage.
After the grinding of phase I finished, the lapping liquid of residual this grinding of meeting and grinding residue on grinding head and the wafer if these lapping liquids and residue cleaning are not removed, will have influence on the grinding of second stage, cause cut in wafer surface.For this reason, generally be provided with the on-line cleaning device in the CMP equipment, with during being implemented in grinding head and moving to the cleaning of grinding head and wafer.Fig. 1 cleans schematic diagram midway for existing grinding head, as shown in Figure 1, grinding head utilizes vacuum suction wafer 100 through cleaning area by vacuum line 105, when grinding head when cleaning shower nozzle 102 on the scavenge pipe 101 aligns, shower nozzle 102 ejection deionized waters clean it, to remove accompanying lapping liquid and residue on wafer and the grinding head.Yet, the cleaning dynamics of the existing cleaning device of cause is not enough, for the relief region that some are difficult to clean in the grinding head, as the Waffer edge that is positioned at grinding head supporting disk 106 lower surfaces covers lapping liquid and residue that the slit 108 of 104 of ring (retaining ring) 103 and buffer films (membrane) exists, under general cleaning condition, be difficult to remove, often need the long scavenging period of cost, still can not guarantee to clean up, cause the reduction of whole cleaning efficiency and effect, influence grinding next time.
Summary of the invention
The invention provides a kind of cleaning device of grinding head, this device emphasis has been strengthened the cleansing power to the position that is difficult to clean, and has improved whole cleaning efficiency.The present invention not only is confined to field of semiconductor manufacture, can also be applied to other field, as field of machining etc.
The invention provides a kind of cleaning device of grinding head, this grinding head has central area and fringe region, described fringe region has the slit, described cleaning device comprises the scavenge pipe that links to each other with main pipe rail and by a plurality of cleaning shower nozzles of drawing on the scavenge pipe, the position of described shower nozzle is corresponding to the center and peripheral zone of described grinding head, wherein, the height of the described shower nozzle of corresponding described grinding head center is less than the height of the described shower nozzle of the described grinding head fringe region of correspondence.
Wherein, described slit is meant that Waffer edge on the grinding head covers the slit between ring and the buffer film.
Wherein, described scavenge pipe is fixed between each grinding pad on the grinding table.
Wherein, the height of described shower nozzle can be adjusted by the length of regulating described shower nozzle.
Wherein, if described scavenge pipe is a coiled pipe, can also adopt the height of adjusting described shower nozzle by the shape of regulating described coiled pipe.
Wherein, described main pipe rail can be water lines, air pipe or vacuum line.
The present invention has the another kind of chemical-mechanical grinding device of identical or relevant art feature, comprise a plurality of grinding pads, grinding head, and a plurality of cleaning devices that are used to clean grinding head that are fixed between the described adjacent grinding pad, described grinding head has central area and fringe region, described fringe region has the slit, described cleaning device comprises the scavenge pipe that links to each other with main pipe rail and by a plurality of cleaning shower nozzles of drawing on the scavenge pipe, the position of described shower nozzle is corresponding to the center and peripheral zone of described grinding head; Wherein, the height of the described shower nozzle of corresponding described grinding head center is less than the height of the shower nozzle of going back of the described grinding head fringe region of correspondence.
Wherein, described slit is meant that Waffer edge on the grinding head covers the slit between ring and the buffer film.
Wherein, the height of described shower nozzle can be adjusted by the length of regulating described shower nozzle.
Wherein, if described scavenge pipe is a coiled pipe, can also adjust the height of described shower nozzle by the shape of regulating described coiled pipe.
Compared with prior art, the present invention has the following advantages:
The cleaning device of a kind of grinding head provided by the invention, clean the distance of shower nozzle according to the complexity adjustment of cleaning to place to be cleaned, keeping under the constant situation of cleaning condition, strengthened local cleansing power, realized that the emphasis that cleans part for difficulty cleans, improve cleaning efficiency, shortened the production cycle.
The convenient and flexible installation of cleaning device of the present invention is easy to realize.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.
The cleaning device of grinding head provided by the invention, comprise the scavenge pipe that links to each other with water lines and by a plurality of cleaning shower nozzles of drawing on the scavenge pipe, the position of a plurality of cleaning shower nozzles is corresponding with the center and peripheral zone of grinding head respectively, because of the fringe region of grinding head generally can have the slit, the cleaning difficulty is relatively large, influenced the cleaning efficiency of whole grinding head, among the present invention, it is inequality fully to the distance of grinding head to be designed to a plurality of cleaning shower nozzles, corresponding close together of cleaning the cleaning shower nozzle of the bigger fringe region with slit of difficulty to grinding head, the height setting of the shower nozzle of promptly corresponding grinding head fringe region must be higher than the height of the shower nozzle of corresponding grinding head center.Cleaning device of the present invention can keep strengthening local cleansing power under the constant situation of cleaning condition, has realized that the emphasis that cleans part for difficulty cleans, and has improved cleaning efficiency.
A specific embodiment of the present invention is between the different grinding stages, and the cleaning device to grinding head and wafer clean specifies first specific embodiment of the present invention below:
Grinding for same wafer; its process of lapping can be divided into corase grind, fine grinding and correct grinding three phases; and each stage is all different with the requirement of lapping liquid (slurry) to grinding pad (polish pad); get over the stage backward;, flatness lower because of its grinding rate requires higher, used grinding pad can particle finer and close, lapping liquid can be more tiny.Promptly, in the different grinding stages, need to use different grinding pad and lapping liquid, so in the process of lapping of wafer, the grinding head (head) that wafer in clamping just need move between the grinding pad that is used for the different grinding stage, carry out the grinding of different phase, simultaneously, also need to change different lapping liquids in each stage.Fig. 2 is for adopting the milling apparatus schematic diagram of cleaning device of the present invention, as shown in Figure 2, this equipment has four grinding head 201a to 201d, three different grinding pad 202a that are used for the different grinding stages to lapping liquid supply pipe (tube) 203a of 202c and three different lapping liquids of supply to 203c, and the initial bit 210 that is used for loading and unloading wafer.In addition, in the moving process of grinding head, must the lapping liquid of previous stage can not be brought in the grinding of the latter half, because if the lapping liquid when when carrying out fine grinding, having brought corase grind into, lapping liquid when having brought corase grind or fine grinding during correct grinding into, then can cause cut (Scratch), and then cause the rate of finished products of device to reduce in wafer surface.
In clamping during the moving of grinding head of wafer, wafer need be lifted from grinding pad, because the viscous force effect of lapping liquid, this transfer is very difficult, generally need utilize vacuum adsorption (Vacuum-chucking) that wafer is picked up, simultaneously, can have the lapping liquid of this grinding on grinding head that lifts and the wafer and grind residue, do not remove just direct it is moved on the grinding pad of next stage and grind if these lapping liquids and residue are not cleaned, will have influence on the grinding of next stage, cause cut in wafer surface.For this reason, CMP equipment can be provided with cleaning device 204a to 204c midway what grinding head moved between grinding pad, to be implemented between the different grinding stage, to move midway at grinding head grinding head and wafer are washed.
But for grinding head, there are some relief region that are difficult to clean in it, and lapping liquid and residue residual in these zones are that difficult the cleaning removed comparatively speaking, often need the long scavenging period of cost, so that have influence on whole cleaning efficiency.For this reason, the present invention improves the shower nozzle in traditional cleaning device, makes that a plurality of cleaning shower nozzles in the cleaning device have nothing in common with each other to the distance of grinding head, and the corresponding cleaning shower nozzle that cleans the bigger position of difficulty is also nearer to the distance of grinding head.
Fig. 3 is that the grinding head behind the employing cleaning device of the present invention cleans schematic diagram midway.As shown in Figure 3, grinding head in the present embodiment is the mode holding chip that utilizes vacuum suction by vacuum line 105, the supporting disk 106 lower surfaces periphery design of this grinding head has a wafer Waffer edge to cover ring (retainingring) 103, this covers the defined zone of ring and forms a groove, wafer can be held within it, realize better wafer being fixed on the grinding head.In addition, a buffer film (membrane) 104 is arranged, during grinding in the central area of this grinding head, to the grinding head pressurization, to exert pressure by 106 pairs of buffer films 104 of supporting disk, the wafer 100 that itself and desire are ground is adjacent to, pressure distribution on the wafer is even, and the uniformity of finally grinding the result is better.But, for the grinding head that adopts this kind structure, can cover ring 103 and 104 formation of buffer film, one slit 108 at Waffer edge, this slit is easily hidden in process of lapping and is received lapping liquid and grind residue, and also is difficult to remove clean when cleaning.
Between each grinding pad below the grinding head, a scavenge pipe that is connected with the deionized water pipeline is installed, a plurality of cleaning shower nozzles are housed on this scavenge pipe.Above grinding head arrived cleaning device, in the time of need cleaning with the grinding residue residual lapping liquid, this cleaned the shower nozzle unlatching, sprays a certain amount of deionized water grinding head and wafer are carried out on-line cleaning.In this traditional cleaning device, cleaning condition to grinding head and each several parts such as wafer is identical, emphasis is not carried out in the place that is difficult to clean yet to be cleaned, the result is under most of regional situation about having cleaned up, still need add and for a long time the uneven part that is difficult to clean be cleaned, cleaning efficiency is lower.As the slit in the present embodiment 108, residual lapping liquid is compared with major part zone to be cleaned with the grinding residue and is difficult to remove in it, for it is cleaned up, needs extra lengthening scavenging period.And both made the scavenging period that extended, and still may not remove fully totally, can not reach cleaning performance preferably, influence normally carrying out of next step grinding technics, cause cut in wafer surface.And if adopt to change cleaning condition, as strengthening hydraulic pressure, increasing water temperature and wait and improve whole cleansing power, realize then both may having damaged wafer to the comparatively desirable cleaning at place, slit, comparatively waste resource again.
Improve in cleaning efficiency and effect, the present embodiment for improving this problem, be implemented under the situation that does not change cleaning condition, cleaning device is transformed.The distance of cleaning between shower nozzle and grinding head is adjusted by the cleaning difficulty of grinding head and wafer, as shown in Figure 3, cleaning shower nozzle 301a corresponding to difficult 108 places of cleaning, slit, carried out adding long process, improved its height, make its with grinding head in distance between the slit of difficult cleaning reduce.Like this, do not changing under the situation of cleaning conditions such as hydraulic pressure, strengthening difficulty cleaning place cleansing power to its cleaning of having carried out emphasis, has been improved cleaning performance; Simultaneously, still remain unchanged, guarantee not influence its normal wash corresponding to the cleaning shower nozzle 102 that is easier to clean part.After adopting the cleaning device of present embodiment, scavenging period can be reduced to about 100 seconds by original about 200 seconds, has obviously improved cleaning efficiency.
In the present embodiment, what be installed on that scavenge pipe between the grinding pad adopts is the constant hard tube of fixed in shape, and it is good that it just cleans required fixed in shape according to grinding head when mounted, and the difficult cleaning shower nozzle that cleans part of correspondence is extended gets final product again.In other embodiments of the invention, scavenge pipe also can adopt the adjustable flexible pipe of shape, as coiled pipe, required shape was placed between the grinding pad when it was cleaned by grinding head, and by the difficulty or ease program installation cleaning shower nozzle that cleans, but when finding that in grinding certain place to be cleaned also needs extra emphasis to clean, the shape of this washing hose can be adjusted on demand again, in addition, also can be by the method for lifting on the coiled pipe with corresponding difficult cleaning part, improve the height that shower nozzle is cleaned at this place, and then realize reducing to clean the distance of shower nozzle to difficult cleaning place, strengthen the purpose of the cleansing power at this place, use more flexible.
Four shower nozzles have been installed on scavenge pipe in the present embodiment to be cleaned, in other embodiments of the invention, can also be provided with still less or more clean shower nozzle on demand,, and respectively clean shower nozzle and can have nothing in common with each other to the distance of thing to be cleaned difficulty by its cleaning as 2 to 10.
In the present embodiment, cover the cleaning shower nozzle length in the slit between ring and the buffer film, and realized the emphasis at this place, slit is cleaned by Waffer edge on the corresponding grinding head that extends; In other embodiments of the invention, can also be at the structure difference of the grinding head that adopts, other uneven part of grinding head is carried out emphasis cleans, cover slit between ring and elastic plate etc. as opening, the Waffer edge of retainer ring, can realizing different cleaning strengths to the distance of thing to be cleaned by adjust cleaning shower nozzle equally, improving the cleaning efficiency of integral body.
Good chemical mechanical milling tech not only will provide high grinding rate, also will make wafer surface after the grinding not have fluctuating on the coarse and macroscopic view on the microcosmic, and these is all relevant with selecting for use of grinding pad and lapping liquid.Choosing of grinding pad and lapping liquid is improper, will cause grinding efficiency low or have defective at lapped face, for this reason, before grinding, must choose according to the requirement of material to be ground and determine grinding pad and lapping liquid.The lapping liquid of the different required uses of material to be ground can not be used with, if the lapping liquid that grinding head grinds the last time is brought in the grinding of different materials next time, the wafer surface that just may cause next time being ground is impaired, the generation cut.In the present embodiment, this cleaning device is to be used for grinding head that on-line cleaning shifts between the difference grinding stage and wafer, in other embodiments of the invention, grinding head and wafer after it can be used for also that on-line cleaning is arbitrary time and grinds prevent that previous grinding from exerting an influence to next time grinding.
In the present embodiment, this cleaning device is to be fixed between the grinding pad, be used for on-line cleaning grinding head and wafer, in other embodiments of the invention, this device can also be fixed in other position, near the grinder main body, clean parts such as grinding head or grinding pad adjuster, be to determine on the scavenge pipe just cleaning the distance of shower nozzle equally to thing to be cleaned according to the cleaning complexity of thing to be cleaned, the place, slit of difficult more cleaning, the height that cleans shower nozzle is big more, cleaning force is strong more, thereby improved whole cleaning efficiency, improved cleaning performance, shortened the production cycle.
In the present embodiment, this cleaning device is to link to each other with water lines, cleans with deionized water; In other embodiments of the invention, it can also link to each other with air pipe, uses air-flow, as N
2, Ar blows away the residue on thing to be cleaned surface, can realize different cleaning forces by adjusting the gas blowout head to the distance between thing to be cleaned equally; Perhaps this cleaning device can also be linked to each other with vacuum tube, with pull of vacuum the residue on thing to be cleaned surface be removed, it equally also can realize different cleaning forces to the distance between thing to be cleaned by adjusting vacuum head.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.