CN100446205C - 半导体装置和其制造方法 - Google Patents

半导体装置和其制造方法 Download PDF

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Publication number
CN100446205C
CN100446205C CNB2005800105479A CN200580010547A CN100446205C CN 100446205 C CN100446205 C CN 100446205C CN B2005800105479 A CNB2005800105479 A CN B2005800105479A CN 200580010547 A CN200580010547 A CN 200580010547A CN 100446205 C CN100446205 C CN 100446205C
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mentioned
circuit board
projection
semiconductor element
electrode pad
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CN1938839A (zh
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大内明
村上朝夫
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Godo Kaisha IP Bridge 1
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NEC Corp
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Abstract

本发明在将半导体元件和布线基板的间隙进行树脂密封而形成的半导体装置和其制造方法中，实现高可靠性的电连接。在布线基板(1)的上面设置电极焊盘(5)和阻焊膜(7)，在阻焊膜(7)上形成开口部(7a)以使电极焊盘(5)露出，在半导体元件(2)的下面设置电极(4)。并且，经由凸块(3)将电极(4)连接在电极焊盘(5)上。进而，在布线基板(1)和半导体元件(2)之间的空间中除了凸块(3)和阻焊膜(7)的部分上，设置由树脂构成的底部填充树脂(6)。并且，使得在布线基板(1)和半导体元件(2)之间，阻焊膜(7)的厚度(B)为阻焊膜(7)上的底部填充树脂(6)的厚度(A)以上。另外，使凸块(3)的体积(Vb)小于开口部(7a)的容积(Vs)。

Description

半导体装置和其制造方法
技术领域
本发明涉及一种通过将半导体元件搭载于布线基板上、并利用由树脂构成的底部填充(underfill)树脂密封该半导体元件和布线基板的间隙而制作成的半导体装置及其制造方法，特别是涉及具有倒装片或芯片尺寸封装等安装结构的半导体装置及其制造方法。
背景技术
伴随着电子设备的小型化、轻量化及高功能化，作为将LSI(LargeScale Integrated，大规模集成电路)芯片等半导体元件安装到布线基板上的方法，广泛进行倒装片安装。倒装片安装是指，在半导体元件布线图形面上形成凸块并将其与布线基板的电极接合的安装方式。
图7(a)～(d)是以其工序顺序表示现有的半导体装置的制造方法的剖视图。首先，如图7(a)所示，准备布线基板1及半导体元件2。在布线基板1的一个表面上形成多个电极焊盘5，在布线基板1的表面中的电极焊盘5的周围的区域设置阻焊膜7。此外，在半导体元件2的一个表面上形成多个电极4。并且，在半导体元件2的电极4上及布线基板1的电极焊盘5上分别形成凸块3。此外，在布线基板1的形成有电极焊盘5的表面上粘附有焊剂8。以覆盖电极焊盘5及形成于该电极焊盘5上的凸块3的方式粘附焊剂8。另外，此时，也会有焊剂8附着在半导体元件2上形成的凸块3的顶端的情况。
然后，如图7(b)所示，以使形成于半导体元件2上的凸块3与形成于布线基板1上的凸块3抵接的方式，使半导体元件2位于布线基板1上，并进行回流以使凸块3熔融并凝固。由此，相互抵接的半导体元件2上的凸块3和布线基板1上的凸块3一体化，并经由半导体元件2的电极4与布线基板1的电极焊盘5连接。
然后，如图7(c)所示，将在该布线基板1上安装了半导体元件2的安装品洗净并除去焊剂8。然后如图7(d)所示，在布线基板1和半导体元件2之间间隙内，利用毛细管现象浸透液体状的树脂材料，并填充到该间隙内。此时，在布线基板1的上述间隙及半导体元件2的周围均粘附有树脂材料。并且通过加热使该树脂材料固化，在布线基板1和半导体2间的间隙、其周边及半导体元件2的周围形成底部填充树脂6。由此制作半导体装置。
在这种半导体装置状，在布线基板和半导体元件间的连接部分要求很高的连接可靠性。即，要求不会产生连接损坏地将半导体元件长期稳定地与半导体元件连接。因此，需要在半导体元件和布线基板间的间隙中充分填充树脂材料并使其固化，形成底部填充树脂，由此保护半导体元件和布线基板的连接部，并且需要使底部树脂的物性值、例如弹性率及热膨胀系数等物性值适当，以降低因半导体元件和布线基板间的热膨胀系数差产生的热应力中施加到连接部上的应力。但是，近来随着LSI的高性能化的要求，LSI在不断大型化，其结果，半导体元件和布线基板之间产生的热应力的影响变得更加显著。因此，如果不进一步提高底部填充树脂的物性值，就得不到充分的连接可靠性的现象突显出来。
该问题可通过使底部填充树脂含有大量的填料、实现底部填充树脂的高弹性率化和低热膨胀系数化来解决。但是，如果使之含有填料，固化前的树脂材料的粘度就会升高，所以产生不能使树脂材料充分地填充在半导体元件和布线基板的间隙中的问题。另外，即使能使树脂材料充分地填充在上述间隙中，例如在半导体元件和布线基板间的间隙中产生了空隙时，因装置工作时等产生的热应力，凸块、电极和电极焊盘产生塑性变形，有时相邻的凸块相互之间还可能经由空隙连结而引起短路。
如此，存在为了提高半导体装置的连接可靠性，必须同时满足底部填充树脂的弹性率和热膨胀系数等物性值和树脂材料的间隙填充性的困难的问题。该问题随着LSI的大型化和微细间距化的发展，必须渗透树脂材料的填充距离会延长，或者半导体元件和布线基板之间的间隙会变得越来越窄，所以可以预想上述问题将会更加显著。
对此，针对该问题，提出了一种安装方法，预先在布线基板上涂敷底部填充树脂形成用的树脂材料，将半导体元件安装在布线基板上后进行加热，从而进行焊接和树脂固化(例如，参照专利文献1)。图8(a)至(c)是按制造工序顺序表示该现有的半导体装置的制造方法的剖视图。首先，如图8(a)所示，作为将半导体元件2搭载在布线基板1上前的工序，在半导体元件2的电极4上形成凸块3。另外，在布线基板1的表面形成了电极焊盘5，在电极焊盘5的周围设有阻焊膜7。
然后，如图8(b)所示，将布线基板1放置在载物台(未图示)上，使布线基板1中搭载半导体元件2的一侧的面朝上，在该面上涂敷底部填充树脂形成用的树脂材料6a，涂敷量为在布线基板1上搭载了半导体元件2时将两者之间充分地填充。
接下来，如图8(c)所示，用焊头(未图示)吸附半导体元件2，使形成了电极4的面朝下并保持，对半导体元件2相对于布线基板1进行定位。然后，将半导体元件2相对于布线基板1进行按压，以使凸块3挤开树脂材料6a而和电极焊盘5抵接。其后，由吸附了半导体元件2的焊头上具备的加热器等加热单元对半导体元件2进行加热，并且由放置了布线基板1的载物台上具备的加热器等加热单元对布线基板1进行加热，使凸块3回流，经由凸块3连接了半导体元件2的电极4和布线基板1的电极焊盘5，使树脂材料6a热固化，形成底部填充树脂6。从而，完成半导体元件2的安装。
专利文献1：特开2001-332583号公报
发明内容
发明要解决的问题
然而，上述专利文献1中记载的现有技术存在如以下所述的问题点。第一个问题点是，当半导体元件和布线基板之间的底部填充树脂6中产生了空隙时，不能得到充分的连接可靠性。产生空隙的原因是，因为在回流前已经在半导体元件和布线基板之间填充了树脂材料，所以因在回流时布线基板等被加热而从布线基板等产生的挥发成分残留在底部填充树脂内。如果底部填充树脂中产生空隙，凸块就会因装置工作时等产生的热应力而塑性变形，有时相邻的凸块还可能通过空隙连接而引起短路。因此，半导体装置的连接可靠性下降。
第二个问题点是，不能得到稳定的焊接。其原因在于在焊接前布线基板上涂敷了树脂材料。即，因为在焊锡凸块的回流时，在凸块的周围已经存在底部填充树脂形成用的树脂材料，所以在焊锡凸块的回流中，随着该树脂材料的固化而粘度增加，在焊锡熔融时，粘度上升了的树脂材料会妨碍焊锡在电极焊盘上浸湿延展。另外，如果为了提高连接可靠性而在树脂材料中添加二氧化硅等填料，不仅树脂材料的粘度进一步上升，而且因填料咬入连接部而使得焊锡相对于电极焊盘的浸湿性越来越低。
此时，作为改善焊接性的手段，有效的手段是在回流时施加负载，促进焊锡相对于电极焊盘的浸湿延展，但是存在如果焊锡熔融后还继续施加负载，熔融了的焊锡凸块就会压坏而和相邻的凸块接触，从而短路的问题。
本发明正是鉴于上述问题点而提出的，其目的在于提供一种用树脂密封半导体元件和布线基板的间隙而制作的半导体装置及其制造方法，在该半导体装置和其制造方法中，能够实现布线基板和半导体元件之间的稳定的连接，连接可靠性高。
用于解决问题的手段
本发明所涉及的半导体装置，其特征在于，具有：布线基板，在其表面形成有电极焊盘；半导体元件，被配置在该布线基板上，在其表面形成有电极；凸块，将上述电极连接在上述电极焊盘上；和底部填充树脂，被填充在上述布线基板和上述半导体元件之间，将上述凸块埋入，上述布线基板具有阻焊膜，该阻焊膜被配置在形成有上述电极焊盘一侧的表面上，在该阻焊膜上形成有使上述电极焊盘露出的开口部，在上述布线基板和上述半导体元件之间，除了上述电极焊盘的正上方区域以外的周围区域中的上述阻焊膜的厚度，为上述周围区域中的配置在上述阻焊膜上的上述底部填充树脂的厚度以上。
在本发明中，因为阻焊膜的厚度为配置在该阻焊膜上的底部填充树脂的厚度以上，所以由电极焊盘、凸块和电极构成的连接部的一半以上的部分被阻焊膜所覆盖，即使在底部填充树脂中产生了空隙时，也能够抑制因热应力而导致的凸块的变形，能够防止产生凸块之间的短路。
此时，优选的是，配置在上述阻焊膜上的上述底部填充树脂的厚度为50μm以下。从而，不需要使阻焊膜的厚度过厚，且不会有阻焊膜的开口部过深的情况，所以凸块的形成变得容易。
另外，优选的是，上述凸块的体积小于上述开口部的容积。从而，在使凸块熔融并使之接合在电极或电极焊盘上时，即使为了提高连接性而在施加负载的同时使凸块熔融，也不会有凸块损坏而从开口部流出、并和其他的凸块连接的情况。因而，能够施加负载而不使凸块之间短路，从而可在电极焊盘、凸块和电极之间得到稳定的连接。
此时，优选的是，上述阻焊膜的厚度为30μm以上。从而，开口部的容积变大，能够使凸块的体积为某种程度以上的体积，所以能够提高电极焊盘和电极之间的连接可靠性。
本发明所涉及的半导体装置的制造方法，该半导体装置具有在表面上形成有电极焊盘的布线基板和在表面上形成有电极的半导体元件，上述布线基板具有阻焊膜，该阻焊膜被配置在形成有上述电极焊盘一侧的表面上，在其上形成有使上述电极焊盘露出的开口部，所述半导体装置的制造方法的特征在于，具有以下工序：在上述电极焊盘上和上述电极上中的至少一个上形成凸块；在上述布线基板上的搭载上述半导体元件的预定区域的至少一部分上粘附液体状的树脂材料；将上述半导体元件按压在上述布线基板上，将上述电极焊盘、上述凸块和上述电极相互连接；使上述凸块熔融后使之凝固，将上述电极经由上述凸块与上述电极焊盘接合；以及使上述树脂材料固化，在上述布线基板和上述半导体元件之间以将上述凸块埋入的方式形成底部填充树脂，在上述接合工序中，在上述凸块的熔融中控制上述布线基板和上述半导体元件之间的距离，使得在形成上述底部填充树脂后，在上述布线基板和上述半导体元件之间，除了上述电极焊盘的正上方区域以外的周围区域中的上述阻焊膜的厚度，为上述周围区域中的配置在上述阻焊膜上的上述底部填充树脂的厚度以上。
另外，优选的是，在上述形成凸块的工序中，使上述凸块的体积小于上述开口部的容积。从而，在使凸块熔融并使之接合在电极或电极焊盘上时，即使为了提高连接性而在施加负载的同时使凸块熔融，也不会有凸块损坏而从开口部流出、并和其他的凸块连接的情况。从而，能够在防止凸块相互间的短路的同时对凸块施加负载，所以即使在将树脂材料粘附在布线基板上后进行电极焊盘和电极的接合，在接合部也难以产生因树脂材料介于其间而导致的连接不良。因此，能够提高连接部的连接可靠性。
此外，在上述接合的工序中，可通过控制上述半导体元件相对于上述布线基板的相对位置，来控制上述布线基板和上述半导体元件之间的距离。另外，在上述接合的工序中，可在将上述半导体元件按压在上述布线基板上的同时进行上述凸块的熔融，通过控制上述按压力来控制上述布线基板和上述半导体元件之间的距离。
发明的效果
根据本发明，通过使阻焊膜的厚度为配置在该阻焊膜上的底部填充树脂的厚度以上，可将连接部的一半以上的部分用阻焊膜覆盖，可防止产生凸块相互间的短路。从而，可经由凸块将电极稳定地连接在电极焊盘上，可得到连接可靠性高的半导体装置。
附图说明
图1(a)是表示本发明的第一实施方式所涉及的半导体装置的剖视图，图1(b)是表示其连接部的局部放大剖视图。
图2是表示本发明的第二实施方式所涉及的半导体装置的连接部的局部放大剖视图。
图3(a)至(c)是按制造工序顺序表示本发明的第三实施方式所涉及的半导体装置的制造方法的剖视图。
图4(a)至(c)是表示本实施方式所涉及的半导体装置的制造方法的局部放大剖视图。
图5(a)至(c)是按制造工序顺序表示本发明的第四实施方式所涉及的半导体装置的制造方法的剖视图。
图6(a)至(c)是表示本发明的第五实施方式所涉及的半导体装置的制造方法的局部放大剖视图。
图7(a)至(d)是按制造工序顺序表示现有的半导体装置的制造方法的剖视图。
图8(a)至(c)是按制造工序顺序表示其他的现有半导体装置的制造方法的剖视图。
标号的说明
1.布线基板
2.半导体元件
3.凸块
4.电极
5.电极焊盘
6.底部填充树脂
6a.树脂材料
7.阻焊膜
7a.开口部
8.焊剂
A.阻焊膜7上的底部填充树脂6的厚度
B.阻焊膜7的厚度
C.电极焊盘5和凸块3的高度的和
D.凸块3的高度
具体实施方式
下面，参照附图具体说明本发明的实施方式。首先，说明本发明的第一实施方式。本实施方式是半导体装置的实施方式。图1(a)是表示本实施方式所涉及的半导体装置的剖视图，图1(b)是表示其连接部的局部放大剖视图。如图1(a)和图1(b)所示，在本实施方式所涉及的半导体装置中，设有布线基板1，在布线基板1的上面设有多个电极焊盘5。另外，在布线基板1的表面上设有阻焊膜7。并且，在阻焊膜7的相当于电极焊盘5的正上方区域的区域，形成有开口部7a，从和布线基板1的表面垂直的方向看(以下称俯视)，在阻焊膜7的各开口部7a的内部，分别配置有一个电极焊盘5。从而，电极焊盘5在开口部7a露出。即，在布线基板1的表面的电极焊盘5的周围区域，设有阻焊膜7。
另外，在布线基板1的上方设有LSI等半导体元件2。在半导体元件2的下面、即布线基板1侧的表面，形成有多个电极4。俯视下，电极4位于和布线基板1的电极焊盘5相同的位置。例如，电极4和电极焊盘5的厚度相互相等。另外，电极4和电极焊盘5的表面平坦。然后，在俯视下位于相同位置的电极焊盘5和电极4之间，分别设有凸块3，电极4经由凸块3和电极焊盘5电连接。由电极焊盘5、凸块3和电极4形成连接部。连接部的高度大于阻焊膜7的厚度，为阻焊膜7的厚度的两倍以下。另外，在图1(a)中，为了简化图示，只表示了4个连接部，但是本发明不限定于此，通常设有更多的连接部。
进而，在布线基板1和半导体元件2之间的空间中除了凸块3的部分、和布线基板1上的覆盖半导体元件2的侧部的区域，设有由树脂构成的底部填充树脂6。并且，在布线基板1和半导体元件2之间，阻焊膜7的厚度B形成为阻焊膜7上的底部填充树脂6的厚度A以上。即，A≤B。因此，连接部中由阻焊膜7覆盖的下面部分的体积，为连接部整体的体积的一半以上。此外，因为电极4和电极焊盘5的厚度相互相等，所以凸块3的一半以上，其周围被阻焊膜7覆盖。
另外，因为底部填充树脂6填充阻焊膜7和半导体元件2之间的空间，所以上述厚度A，与阻焊膜7的上面和半导体元件2的下面之间的距离相等。另外，阻焊膜7的厚度B和位于其上方的底部填充树脂6的厚度A之和(A+B)，和连接部分的高度相等，并且等于布线基板1中的除了电极焊盘5及阻焊膜7的部分、与半导体元件2中的除了电极4的部分之间的距离。
另外，底部填充树脂6的厚度A优选为50μm以下。通过使底部填充树脂6的厚度A为50μm以下，不再需要使阻焊膜7的厚度B过多地加厚以满足上述的A≤B的关系。从而，能够防止阻焊膜7的开口部7a变得过深，另外，因为不再需要过多地加大凸块3，所以凸块3的形成变容易。
上述各尺寸的具体数值，由电极4和电极焊盘5的尺寸以及其间的间距决定。例如，俯视下，电极4和电极焊盘5的形状，为直径为100至200μm的圆形、或一边边长为100至200μm的矩形，电极4和电极焊盘5的间距为0.2至0.5mm时，在满足了阻焊膜7的厚度B为底部填充树脂6的厚度A以上(B≥A)的条件的基础上，选定阻焊膜7的厚度B为30μm以上(B≥30μm)，底部填充树脂6的厚度A为50μm以下(A≤50μm)。
另外，凸块3的体积Vb小于阻焊膜7的开口部7a的容积Vs。即，Vs＞Vb。并且，如果设电极4的体积为Ve、电极焊盘5的体积为Vp，则连接体的体积(Vb+Ve+Vp)优选小于阻焊膜7的开口部7a的容积Vs。即，优选Vs＞Vb+Ve+Vp。
而且，优选的是，阻焊膜7的厚度B为30μm以上。从而，为了满足上述的Vs＞Vb的关系，不再需要使凸块3过小，可使凸块3的体积为某种程度的大小。其结果，能够提高电极焊盘5和电极4之间的连接可靠性。
凸块3由焊锡形成，例如，由Sn-Pb共晶焊锡、Sn-Pb非共晶焊锡、Sn-Ag焊锡、Sn-Cu焊锡、Sn-Sb焊锡、Sn-Zn焊锡或Sn-Bi焊锡、或者在这些焊锡中加入了特定的添加元素的低熔点金属材料等形成。特别优选Sn-Pb共晶焊锡或Sn-Ag-Cu焊锡等，但是不限于此。另外，半导体元件2的电极4和布线基板1的电极焊盘5，由焊锡的浸湿性良好的Cu单层膜或(Au/Ni)双层膜形成。
底部填充树脂6是填充在半导体元件和布线基板间的间隙中的液体状的树脂材料固化而形成。作为用于形成底部填充树脂6的树脂材料，优选使用以热固性树脂为主成分、含有0至65质量％的无机质填充剂(填料)的材料。使无机质填充剂的含有量的优选范围的下限为0质量％，表示底部填充树脂6中也可以不含无机质填充剂，使其上限为65质量％，是因为在超过了该上限时，不仅树脂材料的粘度上升显著，而且具有氧化膜去除作用的树脂成分减少，而导致焊接性变差。作为无机质填充剂，可以优选使用二氧化硅填料等，但是也可以是其他的无机质填充剂，没有特别限定。
作为底部填充树脂6的基材、即热固性树脂，可以使用环氧树脂、聚酯树脂(不饱和聚酯、不饱和聚酯和具有活性氢基的化合物的组合等)、丙烯酸酯树脂(包括(甲基)丙烯酰氧基丙基聚硅氧烷等丙烯酸硅酯、丙烯酸环氧酯)等。另外，也可以使用α-氰基丙烯酸酯等在常温下固化的接着剂等作为形成底部填充树脂6的树脂材料。
在形成底部填充树脂6的树脂材料中，优选含有以下固化剂的一种或两种以上的组合：在热固化时和上述热固性树脂反应而促进固化的促进剂、以及通过加热产生使热固性树脂固化的游离基的游离基引发剂、阴离子引发剂及阳离子引发剂等。
另外，在形成底部填充树脂6的树脂材料中，也可以添加具有氧化膜去除作用的药品，例如有机酸等金属表面净化剂。而且，也可以添加在树脂材料的固化反应时生成具有氧化膜去除作用的成分的药品，从而，通过对树脂材料进行加热，使其变成具有氧化膜去除作用的活性树脂材料，特别是在对容易进行氧化的Cu电极或Cu电极焊盘和凸块进行连接时，也不再需要使用焊剂。
阻焊膜7可以使用一般市面上出售的物体，作为一例，可以使用太阳油墨公司(太陽インキ株式会社)生产的商品或田村化研公司(タムラ化研株式会社)生产的商品等。
下面说明本实施方式的效果。在本实施方式中，因为凸块3的一半以上被阻焊膜7覆盖，所以即使在底部填充树脂6中产生了空隙时，也能够抑制因热应力导致的凸块3的变形，而不容易产生焊锡短路等问题。从而，能够提高连接可靠性。另外，在本实施方式中，阻焊膜7的开口部7a的容积Vs大于凸块3的体积Vb，所以在将半导体元件2搭载在布线基板1上时，即使在将凸块3回流的同时对半导体元件2和布线基板1在相互靠近的方向继续施加负载，也不会产生以下情况：熔融的凸块3从开口部7a内流出而和其他的凸块3接触，凸块3相互间短路。因此，能够得到连接部的可靠性高、而且稳定的半导体装置。
下面，说明本发明的第二实施方式。图2是表示本实施方式所涉及的半导体装置的连接部的局部放大剖视图。如图2所示，在本实施方式所涉及的半导体装置中，在布线基板1上，阻焊膜7的端部搁置在电极焊盘5的端部上。即，电极焊盘5的周边部被阻焊膜7覆盖。另外，凸块3与阻焊膜7的开口部7a的侧面相接。进而，在俯视下，电极焊盘5比电极4大。
此时，在上述第一实施方式中说明的阻焊膜7的厚度B，是阻焊膜7的没有搁置在电极焊盘5上的部分的厚度，底部填充树脂6的厚度A，是在底部填充树脂6中，相当于阻焊膜7的没有搁置在电极焊盘5上的部分的正上方的部分的厚度。并且，和上述第一实施方式相同，A≤B。因此，连接部中被阻焊膜7覆盖的下面部分的体积，为连接部整体的体积的一半以上。并且，当电极4和电极焊盘5的厚度相互相等时，凸块3的一半以上，其周围被阻焊膜7覆盖。
另外，在上述第一实施方式说明了的阻焊膜7的开口部7a的容积Vs，是开口部7a内的除了电极焊盘5以外的部分的容积。并且，该容积Vs大于凸块3的体积Vb。即，Vs＞Vb。另外，如果设电极4的体积为Ve，则优选Vs＞Vb+Ve。在本实施方式中的上述以外的构成和效果，和上述第一实施方式相同。
下面，说明本发明的第三实施方式。本实施方式是上述第一实施方式所涉及的半导体装置的制造方法的实施方式。图3(a)至(c)是按制造工序顺序表示本实施方式所涉及的半导体装置的制造方法的剖视图，图4(a)至(c)是表示本实施方式所涉及的半导体装置的制造方法的局部放大剖视图。
首先，如3(a)所示，准备在表面形成有多个电极焊盘5、并在电极焊盘5的周围设有阻焊膜7的布线基板1。电极焊盘5的表面平坦。另外，阻焊膜7的厚度例如为30μm以上。在阻焊膜7中的相当于电极焊盘5的正上方区域的部分形成有开口部7a，电极焊盘5在该开口部7a露出。并且，将该布线基板1放置在例如内置了加热器的载物台(未图示)上，使设有电极焊盘5和阻焊膜7的面朝上。然后，在电极焊盘5上分别形成由焊锡形成的凸块3。另一方面，准备在表面形成了电极4的半导体元件2。电极4的表面平坦。
此时，如图4(a)所示，使电极焊盘5和凸块3的高度之和C高于阻焊膜7的厚度B。即，使C＞B。另外，使图4(b)所示的凸块3的体积Vb小于图4(c)所示的阻焊膜7的开口部7a的容积Vs。即，使Vs＞Vb。更优选的是，如图4(b)所示，设电极4的体积为Ve、电极焊盘5的体积为Vp时，使电极4、凸块3和电极焊盘5的体积之和(Ve+Vb+Vp)小于开口部7a的容积Vs。即，Vs＞Ve+Vb+Vp。
接下来，如图3(b)所示，在布线基板1上的搭载半导体元件2的区域上粘附有底部填充树脂形成用的树脂材料6a。树脂材料6a为液体状的树脂材料，使用例如活性树脂。树脂材料6a，可以是例如在作为基材的热固性树脂中添加了具有焊剂效果的药品的树脂材料，也可以是具有去除由焊锡形成的凸块3、作为被焊接部件的电极4和电极焊盘5的表面的氧化膜的氧化膜去除作用的树脂材料。
树脂材料6a粘附在布线基板1上的方法，可以是例如在布线基板1的中央部分滴下一点材料树脂6a的方法，当半导体元件2较大时，也可以是以在搭载区域的对角线上画“×”的方式涂敷树脂材料6a的方法，或者也可以是将树脂材料6a分为数点而滴在布线基板1上的方法。
接下来，用例如内置了加热器的焊头(未图示)吸附半导体元件2，使形成了电极4的面朝下并进行保持。并且，用焊头使半导体元件2相对于布线基板1进行定位，以使半导体元件2位于布线基板1上，并使半导体元件2的电极4位于布线基板1的电极焊盘5的正上方区域。
接下来，如图3(c)所示，施加预定的负载并将半导体元件2按压在布线基板1上。并且，使半导体元件2的电极4和凸块3抵接。从而，电极焊盘5、凸块3和电极4相互连接。此时，液体状的树脂材料6a，被夹压在布线基板1和半导体元件2之间，并被凸块3推开，填充在布线基板1和半导体元件2之间的间隙中。另外，树脂材料6a也被配置在布线基板1上的覆盖半导体元件2的侧部的区域。
接下来，在对半导体元件2在面向布线基板1的方向施加负载的状态下，使用内置于载物台中的加热器和内置于焊头中的加热器之中的至少一个，对凸块3进行加热并使之熔融。从而，熔融的凸块3在电极4的表面上浸湿延展。凸块3熔融后，停止施加负载，用焊头控制半导体元件2的位置。即，控制半导体元件2相对于布线基板1的相对位置。此时，如图1(b)所示，使阻焊膜7的上表面和半导体元件2的下表面之间的距离A为阻焊膜7的厚度B以下。其后，断开加热器，使凸块3冷却凝固。从而，电极4经由凸块3和电极焊盘5电连接，并且进行机械接合。从而，形成由电极焊盘5、凸块3和电极4构成的连接部。
接下来，将由布线基板1、凸块3和半导体元件2构成的安装品投入到设定成预定温度的恒温箱等中预定的时间，使树脂材料6a热固化，形成底部填充树脂6。此时，底部填充树脂6之中，相当于布线基板1和半导体元件2之间的间隙中的阻焊膜7之上的部分的厚度，为上述距离A。由此，将半导体元件2搭载在布线基板1上，制造出上述第一实施方式所涉及的半导体装置。
下面说明本实施方式的效果。在本实施方式中，使凸块3和电极4抵接并使之熔融后，由焊头控制半导体元件2的位置，从而对布线基板1和半导体元件2之间的距离进行调整。从而，能够容易地控制上述底部填充树脂6的厚度A。
另外，在本实施方式中，在将半导体元件2搭载在布线基板1上之前，在布线基板1上粘附树脂材料6a，所以在将半导体元件2搭载在布线基板1上之后，不需要在布线基板1和半导体元件2的间隙中封入树脂材料。因此，作为树脂材料，可以使用弹性率高而热膨胀系数低的材料，半导体装置的连接可靠性得到提高。另外，不需要为了容易进行树脂材料的封入而清洗间隙内的焊剂。而且，不需要为了容易进行树脂材料的封入、而使凸块的高度高到必要以上并加大布线基板1和半导体元件2的间隙，所以能够将半导体装置形成得非常薄。
而且，在本实施方式中，使凸块3的体积Vb小于阻焊膜7的开口部7a的容积Vs，所以，不会有熔融的凸块3流出到开口部7a的外部、和其他的凸块3接触而短路的情况。
此时，在本实施方式中，使阻焊膜7的厚度B为30μm以上，所以可以使开口部7a的容积Vs为某种程度以上的大小，不使凸块3的体积Vb过小也能够满足上述Vs＞Vb的关系。从而，在电极焊盘5上形成了凸块3时，能够确保凸块3的顶部从阻焊膜7的上表面突出的距离为某种程度以上的大小，能够使凸块3的前端容易和电极4抵接。其结果，能够提高电极焊盘5和电极4之间的连接可靠性。
并且，在本实施方式中，使用活性树脂作为底部填充树脂6形成用的树脂材料6a，从而即使不使用焊剂，借助活性树脂自身具备的焊剂作用，也能够抑制伴随焊接时的加热而在凸块3的表面和电极4的表面形成氧化膜。其结果，凸块3和电极4之间的连接可靠性得到提高。另外，活性树脂中添加的具有焊锡氧化膜去除作用的药品，在树脂固化后和基材树脂结合而化学性稳定，所以固化后的底部填充树脂能够具有充分的电绝缘性。
另外，在本实施方式中，表示了使凸块3和电极4抵接并使之熔融后，停止施加负载，用焊头控制半导体元件2的位置，从而控制底部填充树脂6的厚度A的例子，但是本实施方式不限定于此。即，也可以在凸块3熔融后继续对布线基板1和半导体元件2施加负载，向布线基板1按压半导体元件2的同时进行凸块3的回流。从而，能够防止树脂材料6a介于凸块3和电极4之间，能够使连接部的连接良好。另外，既能够确保连接部的连接可靠性，也能够实现半导体装置的薄型化。
此时，在本实施方式中，使凸块3的体积Vb小于阻焊膜7的开口部7a的容积Vs，所以即使在向布线基板1按压半导体元件2的同时进行凸块3的回流，也不会有熔融的焊锡流出到开口部7a的外部、并和其他的凸块3接触而短路的情况。
如此，根据本实施方式，预先在布线基板1上涂敷具有焊锡氧化膜去除作用的树脂材料，并且使电极焊盘5及凸块3的高度和C与阻焊膜7的厚度B的关系、以及凸块3的体积Vb与阻焊膜7的开口部7a的容积Vs的关系如上所述合理化，从而即使在施加负载的同时对凸块3进行回流，也能够防止凸块短路等问题，从而能够实现稳定的凸块连接。
下面，说明本发明的第四实施方式。图5(a)至(c)是按制造工序顺序表示本实施方式所涉及的半导体装置的制造方法的剖视图。在上述第三实施方式中，在布线基板1的电极焊盘5上形成了凸块3，但是在本实施方式中，如图5(a)所示，在半导体元件2的电极4上形成凸块3。此时，使电极4及凸块3的高度之和大于阻焊膜7的厚度，另外，使凸块3的体积(Vb)小于阻焊膜7的开口部7a的容积(Vs)。
然后，如图5(b)所示，在布线基板1的搭载半导体元件2的区域上粘附树脂材料6a。接下来，如图5(c)所示，将半导体元件2按压在布线基板1上，使凸块3和电极焊盘5抵接。其后，在将半导体元件2按压在布线基板1上的状态下使凸块3回流，并将凸块3连接在电极焊盘5上。并且，使凸块3熔融后，控制布线基板1和半导体元件2之间的距离，调整阻焊膜7的上表面和半导体元件2的下表面之间的距离。其后，使凸块3冷却凝固。从而，电极4经由凸块3连接在电极焊盘5上。接下来，使树脂材料6a热固化，形成底部填充树脂6。从而，可制造上述第一实施方式所涉及的半导体装置。本实施方式的上述以外的构成和效果，和上述第三实施方式相同。
接下来，说明本发明的第五实施方式。本实施方式是上述第二实施方式所涉及的半导体装置的制造方法的实施方式。图6(a)至(c)是表示本实施方式所涉及的半导体装置的制造方法的局部放大剖视图。如图6(a)所示，本实施方式和上述第三实施方式比较，不同点是：在布线基板1上，阻焊膜7的端部搁置在电极焊盘5的端部上。
在本实施方式中，如图6(a)所示，在使凸块3回流前的阶段，使凸块3的高度D大于阻焊膜7的厚度B。另外，如图6(b)和(c)所示，设阻焊膜7的开口部7a的容积中、除了电极焊盘5以外的部分的容积为Vs时，使凸块3的体积Vb小于上述容积Vs。即，使Vs＞Vb。更优选的是，使凸块3的体积Vb和电极4的体积Ve之和(Vb+Ve)小于开口部7a的容积Vs。即，使Vs＞Vb+Ve。本实施方式中的上述以外的构成，和上述第三实施方式相同。从而，可制造上述第二实施方式所涉及的半导体装置。本实施方式的上述以外的效果，和上述第三实施方式相同。
另外，在上述第三种至第五实施方式中，表示了在布线基板1的电极焊盘5上和半导体元件2的电极4上之中任何一个上形成凸块3的例子，但是，凸块3也可以在电极焊盘5和电极4双方上均形成。
另外，在上述第三种至第五实施方式中，表示了由内置于焊头或载物台中的加热器进行凸块3的回流的例子，但是本发明不限定于此，也可以例如把由布线基板1、凸块3和半导体元件2构成的组装体穿过加热到预定温度的回流炉，由此进行凸块3的回流。此时，如果在对布线基板1和半导体元件2在相互靠近的方向上施加负载的同时进行连接，就可以进一步提高连接部的可靠性。
而且，在上述第三种至第五实施方式中，也可以在形成了凸块3后、在布线基板1上粘附树脂材料6a前，在布线基板1的形成了电极焊盘5的表面和半导体元件2的形成了电极4的表面之中至少一个面上进行等离子体处理等，由此进行表面改质。从而，能够使凸块3的连接更加良好。
并且，在上述第三种至第五实施方式中，表示了半导体元件2的电极4的表面平坦的例子，但是本发明不限定于此，也可以在电极4的表面形成凸部。由此，可提高电极4和凸块3之间的连接强度。
实施例
下面，就本发明的实施例的效果，和脱离其权利要求范围的比较例进行比较来具体地进行说明。通过在上述第三实施方式中说明的方法，制造了上述第一实施方式所涉及的半导体装置。首先，如图3(a)所示，准备5张在表面形成了多个电极焊盘5、并在电极焊盘5的周围设有阻焊膜7的布线基板1。布线基板1的形状，在俯视下，为纵45mm、横45mm的正方形状。另外，电极焊盘5的形状，在俯视下，为直径135μm的圆形，电极焊盘5的排列间距为240μm。布线基板1的阻焊膜7使用田村化研公司生产的商品，其厚度、即图4(a)所示的厚度B为30μm，阻焊膜7的开口部7a的直径为大约150μm。
另一方面，准备5个在表面上形成了多个电极4的半导体元件2。半导体元件2的形状，在俯视下，为纵14.8mm、横14.8mm的正方形状。在电极4的表面进行了(Au/Ni)两层镀覆。电极4的形状，在俯视下，为直径135μm的圆形，电极4的排列间距为240μm。即，在俯视下，使电极4和电极焊盘5相互重叠。在半导体元件2的表面中没有形成电极4的区域设置聚酰亚胺膜，借助该聚酰亚胺膜，使电极4的表面比半导体元件2的表面中没有形成电极4的区域凹进去大约2μm。另外，布线基板1和半导体元件2的布线结构，为安装后可进行电连接确认的布线结构。
并且，在电极焊盘5上分别形成凸块3。凸块3由其组成为(Sn-3质量％Ag-0.5质量％Cu)的无铅焊锡形成。此时，电极焊盘5和凸块3的高的和，即图4(a)所示的高度C的值为50μm。另外，在5个半导体元件2中，对3个半导体元件2，在电极4上没有形成凸块。对于剩余的2个半导体元件2，在电极4上形成了和在电极5上形成的凸块相同的凸块。
接下来，如图3(b)所示，将布线基板1放置在载物台(未图示)上，用调和器(未图示)在布线基板1中的安装半导体元件2的预定区域上，粘附大约20mg的树脂材料6a。树脂材料6a使用具有氧化膜去除作用的热固性树脂、即含有具有氧化膜去除作用的药品的活性树脂。具体而言，树脂材料6a使用了主成分为液状环氧树脂、并添加了主成分的30～40质量％的酚类固化剂的树脂材料。
此时，在5张布线基板1中的2张布线基板1上，粘附添加了主成分的65质量％的作为无机质填充剂的二氧化硅填料的树脂材料，在另外的1张布线基板1上，粘附添加了主成分的30质量％的二氧化硅填料的树脂材料，在剩余的2张布线基板1上，粘附没有添加二氧化硅填料的树脂材料。
接下来，如图3(c)所示，将上述5张布线基板1和5个半导体元件2组合，制作5个半导体装置。表1中表示该半导体装置中的底部填充树脂的填料量。如表1所示，以在粘附了含有65质量％的二氧化硅填料的树脂材料6a的布线基板1上、安装了没有形成凸块的半导体元件2的半导体装置为实施例No.1，以在粘附了含有30质量％的二氧化硅填料的树脂材料6a的布线基板1上、安装了没有形成凸块的半导体元件2的半导体装置为实施例No.2，以在粘附了不含有二氧化硅填料的树脂材料6a的布线基板1上、安装了没有形成凸块的半导体元件2的半导体装置为实施例No.3。另外，以在粘附了含有65质量％的二氧化硅填料的树脂材料6a的布线基板1上、安装了形成有凸块的半导体元件2的半导体装置为比较例No.4，以在粘附了不含有二氧化硅填料的树脂材料6a的布线基板1上、安装了形成有凸块的半导体元件2的半导体装置为比较例No.5。
将半导体元件2吸附在焊头上，并相对于布线基板1进行定位，将半导体元件2按压向布线基板1。此时，关于半导体元件2上没有形成凸块的实施例No.1至No.3，使用装配器的加热工具加热到240℃的温度并且对每个凸块施加5秒钟的2g重的加压力来进行。从而，凸块3回流，电极4和电极焊盘5经由凸块3相互连接。另一方面，关于在半导体元件2上形成了凸块的比较例No.4和No.5，和实施例No.1至No.3一样加热到了240℃，但是在凸块接合时如果继续施加负载，则凸块之间会短路，所以尝试在凸块熔融后停止施加负载，并通过控制半导体元件2的位置进行连接。
接下来，将在布线基板1上连接有半导体元件2的安装品装入温度为150℃、氛围为大气氛围的恒温槽中120分钟。从而，使树脂材料6a固化，形成底部填充树脂6。由此制造出半导体装置。
并且，测定了底部填充树脂6中布线基板1和半导体元件2之间的阻焊膜7上的部分的厚度、即图1(b)所示的厚度A，结果在使用了没有形成凸块的半导体元件2的半导体装置、即实施例No.1至No.3所涉及的半导体装置中，厚度A平均为10μm、最大为30μm。与之相对，在使用了形成有凸块的半导体元件2的半导体装置、即比较例No.4和No.5所涉及的半导体装置中，厚度A平均为80μm。该结果在表1中表示。
接下来，对如上所述制造的5个半导体装置，评价了焊接性、耐回流性和耐温度循环性。评价结果在表1中表示。另外，在表1中，“○”表示评价结果良好，“×”表示评价结果不良，“-”表示没有进行评价。
首先，评价了焊接性。焊接性的评价，通过调查有无凸块的未连接之处来进行。其结果在表1中表示。如表1所示，在比较例No.4中确认有凸块的未连接之处的存在。与之相对，关于实施例No.1至No.3和比较例No.5，所有的连接部都被电连接，焊接性良好。
接下来，评价了耐回流性。耐回流性的评价如下进行：将除了在接合时产生了未连接之处的比较例No.4以外的所有的半导体装置在最高温度为250℃的回流炉中穿过3次，并调查其后的状态。其结果，确认到在所有的半导体装置中均有空隙的产生，但是关于比较例No.5，确认到在回流后经由空隙产生了凸块之间的短路。关于实施例No.1至No.3，没有确认到凸块之间的短路，耐回流性良好。
接下来，评价了耐温度循环性。耐温度循环性的评价如下进行：对耐回流性良好的3个半导体装置，即实施例No.1至No.3所涉及的半导体装置，进行在从-40℃到+125℃的范围反复加热和冷却的温度循环试验，调查经过1000次循环后是否发生连接不良。其结果，实施例No.1至No.3经过1000次循环后也没有发生连接不良，保持了良好的状态。即，实施例No.1至No.3耐温度循环性良好。
表1
Figure C20058001054700261
如上所述，实施例No.1至No.3的阻焊膜7的厚度B为30μm，底部填充树脂6的厚度A为30μm以下，满足了A≤B，所以焊接性、耐回流性、耐温度循环性均良好。与之相对，比较例No.4和No.5的阻焊膜7的厚度B为30μm，底部填充树脂6的厚度A为80μm，没有满足A≤B，所以焊接性或耐回流性不良。如此，本发明的实施例No.1至No.3与比较例No.4及No.5相比，无论底部填充树脂的种类是什么，连接可靠性均比较优异。其结果，可以确认本发明的优越性。
产业上的可利用性
本发明可适用于将半导体元件安装在布线基板上、并将其连接部用底部填充树脂进行了密封的半导体装置和其制造方法，特别可适用于倒装片或芯片尺寸封装的等半导体装置和其制造方法。

Claims (14)

1.一种半导体装置，其特征在于，
具有：布线基板，在其表面形成有电极焊盘；半导体元件，被配置在该布线基板上，在其表面形成有电极；凸块，将上述电极连接在上述电极焊盘上，由焊锡形成；和底部填充树脂，被填充在上述布线基板和上述半导体元件之间，将上述凸块埋入，
上述布线基板具有阻焊膜，该阻焊膜被配置在形成有上述电极焊盘一侧的表面上，在该阻焊膜上形成有使上述电极焊盘露出的开口部，在上述布线基板和上述半导体元件之间，除了上述电极焊盘的正上方区域以外的周围区域中的上述阻焊膜的厚度，为上述周围区域中的配置在上述阻焊膜上的上述底部填充树脂的厚度以上。
2.根据权利要求1所述的半导体装置，其特征在于，
配置在上述阻焊膜上的上述底部填充树脂的厚度为50μm以下。
3.根据权利要求1或2所述的半导体装置，其特征在于，
上述凸块的体积小于上述开口部的容积。
4.根据权利要求3所述的半导体装置，其特征在于，
上述阻焊膜的厚度为30μm以上。
5.一种半导体装置的制造方法，该半导体装置具有在表面上形成有电极焊盘的布线基板和在表面上形成有电极的半导体元件，上述布线基板具有阻焊膜，该阻焊膜被配置在形成有上述电极焊盘一侧的表面上，在其上形成有使上述电极焊盘露出的开口部，所述半导体装置的制造方法的特征在于，
具有以下工序：在上述电极焊盘上和上述电极上中的至少一个上形成凸块；在上述布线基板上的搭载上述半导体元件的预定区域的至少一部分上粘附液体状的树脂材料；将上述半导体元件按压在上述布线基板上，将上述电极焊盘、上述凸块和上述电极相互连接；使上述凸块熔融后使之凝固，将上述电极经由上述凸块与上述电极焊盘接合；以及使上述树脂材料固化，在上述布线基板和上述半导体元件之间以将上述凸块埋入的方式形成底部填充树脂，
在上述接合工序中，在上述凸块的熔融中控制上述布线基板和上述半导体元件之间的距离，使得在形成上述底部填充树脂后，在上述布线基板和上述半导体元件之间，除了上述电极焊盘的正上方区域以外的周围区域中的上述阻焊膜的厚度，为上述周围区域中的配置在上述阻焊膜上的上述底部填充树脂的厚度以上。
6.根据权利要求5所述的半导体装置的制造方法，其特征在于，
在上述形成凸块的工序中，使上述凸块的体积小于上述开口部的容积。
7.根据权利要求6所述的半导体装置的制造方法，其特征在于，
使上述阻焊膜的厚度为30μm以上。
8.根据权利要求5至7的任意一项所述的半导体装置的制造方法，其特征在于，
在上述接合的工序中，通过控制上述半导体元件相对于上述布线基板的相对位置，来控制上述布线基板和上述半导体元件之间的距离。
9.根据权利要求5至7的任意一项所述的半导体装置的制造方法，其特征在于，
上述树脂材料使用添加了具有氧化膜去除作用的药品的树脂材料。
10.根据权利要求8所述的半导体装置的制造方法，其特征在于，
上述树脂材料使用添加了具有氧化膜去除作用的药品的树脂材料。
11.根据权利要求5至7的任意一项所述的半导体装置的制造方法，其特征在于，
在上述形成凸块的工序和上述粘附树脂材料的工序之间，具有以下工序：在上述布线基板中的形成有上述电极焊盘一侧的表面、及上述半导体元件中的形成有上述电极一侧的表面中的至少一个表面上，进行等离子体处理。
12.根据权利要求8所述的半导体装置的制造方法，其特征在于，
在上述形成凸块的工序和上述粘附树脂材料的工序之间，具有以下工序：在上述布线基板中的形成有上述电极焊盘一侧的表面、及上述半导体元件中的形成有上述电极一侧的表面中的至少一个表面上，进行等离子体处理。
13.根据权利要求9所述的半导体装置的制造方法，其特征在于，
在上述形成凸块的工序和上述粘附树脂材料的工序之间，具有以下工序：在上述布线基板中的形成有上述电极焊盘一侧的表面、及上述半导体元件中的形成有上述电极一侧的表面中的至少一个表面上，进行等离子体处理。
14.根据权利要求10所述的半导体装置的制造方法，其特征在于，
在上述形成凸块的工序和上述粘附树脂材料的工序之间，具有以下工序：在上述布线基板中的形成有上述电极焊盘一侧的表面、及上述半导体元件中的形成有上述电极一侧的表面中的至少一个表面上，进行等离子体处理。
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