CN100440552C - LED and production thereof - Google Patents
LED and production thereof Download PDFInfo
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- CN100440552C CN100440552C CNB2005100080755A CN200510008075A CN100440552C CN 100440552 C CN100440552 C CN 100440552C CN B2005100080755 A CNB2005100080755 A CN B2005100080755A CN 200510008075 A CN200510008075 A CN 200510008075A CN 100440552 C CN100440552 C CN 100440552C
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Abstract
The present invention relates to a light emitting diode and a production method thereof. A polycrystalline structure of the light emitting diode is formed on a substrate and is etched to form pores. Thereafter, a transparent dielectric material is filled into the pores. The conductive substrate and the polycrystalline structure of the light emitting diode are bonded together by using an adhesive layer. Then the substrate is removed.
Description
Technical field
The present invention relates to a kind of Light-emitting Diode And Its Making Method, particularly aluminum indium gallium nitride (AlGaInN) Light-emitting Diode And Its Making Method.
Background technology
Light-emitting diode (Light Emitting Diode; LED) production cost is low, simple in structure because of having, low power consumption, volume is little and install to be easy to advantage, and applies in a large number in lighting source and the display technology.Wherein, in blue light-emitting diode market, aluminum indium gallium nitride (AlGaInN) light-emitting diode is quite paid attention to.
In the process of making the aluminum indium gallium nitride light-emitting diode, be that aluminum indium gallium nitride light-emitting diode polycrystalline structure is formed on the base material, then by adhesion layer with applying conductive base and aluminum indium gallium nitride light-emitting diode polycrystalline structure, at last, again this base material is removed, wherein for obtaining the good polycrystalline structure of crystalline quality, the preferable sapphire substrate of selecting for use of base material.In removing the process of sapphire substrate, generally use laser beam now, pass sapphire substrate by laser beam, make the n type semiconductor layer of aluminum indium gallium nitride light-emitting diode polycrystalline structure resolve into gallium (Ga) and nitrogen (N
2), by heating gallium is melted then, so that sapphire substrate removes from aluminum indium gallium nitride light-emitting diode polycrystalline structure.At this moment, laser beam can cause adhesion layer to decompose if shine directly into adhesion layer, makes conductive base and aluminum indium gallium nitride light-emitting diode polycrystalline structure peel off.This is a shortcoming.
The United States Patent (USP) of Yoo et al., the patent No. is 6,818,531, disclose a kind of method of making the vertical GaN light-emitting diode, overcome the problems referred to above, referring to Fig. 1, aluminum indium gallium nitride light-emitting diode polycrystalline structure 125 has n type semiconductor layer residue 125a, and by adhesion layer 124 conductive base 131 and aluminum indium gallium nitride light-emitting diode polycrystalline structure 125 is fitted.Below base material, apply laser beam then, so that base material 121 is peeled off from aluminum indium gallium nitride light-emitting diode polycrystalline structure 125.At this moment, n type semiconductor layer residue 125a can stop the laser beam from the below, avoids it to shine directly into adhesion layer 124, causes adhesion layer 124 to melt, and then the shortcoming that causes conductive base 131 and aluminum indium gallium nitride light-emitting diode polycrystalline structure 125 to peel off.Yet, in this technology, need the thickness of control n type semiconductor layer residue 125a, shine adhesion layer 124 to determine that laser beam can not pass, but must take into account after base material 121 removes, n type semiconductor layer residue 125a is easy to remove, and therefore must strictly control etching parameter, with the thickness of control n type semiconductor layer residue 125a.
In addition, when applying laser beam and remove sapphire substrate, the stress between conductive base, adhesion layer and aluminum indium gallium nitride light-emitting diode polycrystalline structure increases, and causes aluminum indium gallium nitride light-emitting diode polycrystalline structure instability, the situation of each splitting also happens occasionally in the polycrystalline structure.Therefore, need a kind of aluminum indium gallium nitride light-emitting diode and manufacture method thereof, can overcome the problems referred to above.
Summary of the invention
One aspect of the present invention provides a kind of manufacture method of light-emitting diode; in the process that base material removes; transparent dielectric layer protection light-emitting diode polycrystalline structure, and help engaging of conductive base and light-emitting diode polycrystalline structure, avoid conductive base self-luminous diode polycrystalline structure to peel off.
The present invention provides a kind of light-emitting diode on the other hand, has transparent dielectric layer in its sidewall, and protection light-emitting diode polycrystalline structure avoids interior each layer of light-emitting diode polycrystalline structure to peel off.
The present invention provides a kind of light-emitting diode on the other hand, has transparent dielectric layer in its sidewall, can increase the sidelight output of light-emitting diode.
The manufacture method of light-emitting diode provided by the invention comprises: form the light-emitting diode polycrystalline structure on base material, then, this light-emitting diode polycrystalline structure of etching is to form hole.Form transparent dielectric layer in this hole, engage conductive base and light-emitting diode polycrystalline structure; And remove base material at last.
Light-emitting diode provided by the invention comprises conductive base, light-emitting diode polycrystalline structure and transparent dielectric layer, and wherein ray structure diode polycrystalline structure is positioned on the conductive base, and transparent dielectric layer is positioned at a sidewall of light-emitting diode polycrystalline structure.
Description of drawings
For above-mentioned feature of the present invention, method, purpose and advantage can be become apparent,, be illustrated as follows in conjunction with appended graphic:
Fig. 1 is a known technology;
Fig. 2 A～2E is the schematic flow sheet according to a kind of LED production method of preferred embodiment of the present invention;
Fig. 2 F is a kind of light-emitting diode of preferred embodiment of the present invention; And
Fig. 3 is an another embodiment of the present invention.
Embodiment
The invention provides Light-emitting Diode And Its Making Method, those skilled in the art can pass through following embodiment, and accompanying drawings can be understood the present invention easily, and be implemented.
Referring to Fig. 2 A, at first on base material 200, make light-emitting diode polycrystalline structure 201, light-emitting diode polycrystalline structure 201 described herein comprises AlGaInP light-emitting diode (AlGaInP) polycrystalline structure and aluminum indium gallium nitride light-emitting diode (AlGaInN) polycrystalline structure, wherein, for obtaining the good polycrystalline structure of crystalline quality, when making AlGaInP (AlGaInP) light-emitting diode polycrystalline structure, base material 200 is selected for use as germanium (Ge), GaAs (GaAs) or indium phosphorus (InP), and when making aluminum indium gallium nitride (AlGaInN) light-emitting diode polycrystalline structure, base material 200 is selected for use as sapphire (Sapphire), carbon silicide (SiC), silicon, lithium aluminate (LiAlO
2), zinc oxide (ZnO) or gallium nitride (GaN).The making of light-emitting diode polycrystalline structure 201, for forming n type semiconductor layer 202 respectively in regular turn, luminescence activity layer 204, and p type semiconductor layer 206 is on base material 200.The structure of luminescence activity layer 204 can be homostyructure (homo-structure), single heterojunction structure (single hetero-structure), double-heterostructure (double hetero-structure) or multiple quantum trap structure (Multi-quantum Well; MQW).
Referring to Fig. 2 B, by typical photolithography techniques etching part light-emitting diode polycrystalline structure 201, to form a plurality of holes 207, and the width of the light-emitting diode polycrystalline structure 201 between the hole 207, can decide according to designer's demand, in preferred embodiment, its width is the width of final light-emitting diode (Fig. 2 F).At this, because the material of light-emitting diode polycrystalline structure is different with the material of base material, therefore, the selection of the etchant of selection only needs can to do selective etch to these two kinds of materials and gets final product, and does not need the complicated procedure parameter control etching speed or the degree of depth of etching light-emitting diode polycrystalline structure.Among the embodiment that is disclosed in Fig. 2 B, hole 207 forms and exposes base material 200, at other embodiment, will not expose by base material 200.
Then insert transparent dielectric material in hole 207, shown in Fig. 2 C, to form transparent dielectric layer 208, transparent dielectric material is selected from silicon dioxide (SiO
2), silicon nitride (Si
3N
4), thermosetting resin benzocyclobutene (bisbenzocyclobutene BCB) or polyimides (polyimide).Transparent dielectric material can fill up hole 207 fully, or only in hole 207, form transparent dielectric liner (liner) 308 (referring to Fig. 3), for the sidewall that coats light-emitting diode polycrystalline structure 201, therefore, do not limit the thickness that transparent dielectric material forms in hole 207, in preferred embodiment, transparent dielectric material fills up hole 207, can after when cutting forms light-emitting diode, light-emitting diode has thick transparent dielectric layer, can increase sidelight output.
Then, shown in Fig. 2 D, conductive base 212 is fitted in the upper surface of light-emitting diode polycrystalline structure 201, this step is by forming adhesion layer 210 on conductive base 212, and then makes adhesion layer 210 applying light-emitting diode polycrystalline structures 201 with hot pressing mode.The material of adhesion layer 210 is selected from the group of Au, Sn, In, Ag, Ge, Cu, Pb and alloy thereof.Because this conductive base 212 has metal or its alloy of high reflectance, therefore, need not other extra reflector, can make the luminous output in the same direction of light-emitting diode polycrystalline structure 201.
Then, remove the step of base material.Shown in Fig. 2 E, be example with the aluminum indium gallium nitride light-emitting diode, laser beam (arrow L) puts on the bottom of base material 200, and laser beam makes aluminum indium gallium nitride light-emitting diode polycrystalline structure 201 bottoms be decomposed into into gallium (Ga) and nitrogen (N by base material 200
2), by heating gallium is melted then, so that base material 200 removes.At this moment; because transparent dielectric layer 208 protection light-emitting diode polycrystalline structures 201; make and can not peel off between each layer in the light-emitting diode polycrystalline structure; and transparent dielectric layer 208 help conductive bases 212 engage with light-emitting diode polycrystalline structure 201; make when base material 200 self-luminous diode polycrystalline structures 201 remove; STRESS VARIATION can not take place with the interface of light-emitting diode polycrystalline structure 201 in conductive base 212, adhesion layer 210, causes and peels off phenomenon.
Then, at the top of light-emitting diode polycrystalline structure 201 and the top of conductive base 212, make negative electrode and anode electrode 214,216 respectively, and 208 cuttings of self-induced transparency dielectric layer, to form final a plurality of light-emitting diode 20, shown in Fig. 2 F.
Light-emitting diode of the present invention 20 shown in Fig. 2 F, has transparent dielectric layer 208 in its sidewall, because the refractive index of the semi-conducting material in the light-emitting diode polycrystalline structure 201 (refractive index as gallium nitride (GaN) is about 2.4), refractive index (refractive index as air is about 1.5) with light-emitting diode 20 outsides, there is sizable difference, and can't form good coupling, so light-emitting diode 20 inside is luminous when side is exported, in the inside and outside interface of light-emitting diode 20, produce the phenomenon of optical total-reflection easily.Transparent dielectric layer 208 of the present invention has light transmission features, and refractive index is between the external refractive index (as air) and light-emitting diode polycrystalline structure 201 refractive indexes of light-emitting diode 20, so light-emitting diode 20 inside is luminous, part to the side ejaculation, can penetrate transparent dielectric layer 208 in a large number, to export light-emitting diode 20 outsides to, can not absorbed by transparent dielectric layer 208 or stop, and can effectively promote the light output intensity of light-emitting diode.
The present invention is by the description with reference to different embodiment, and the due cognition of those skilled in the art is graphic and describes in detail for illustrative purposes only and non-limiting, is not to limit the invention to the embodiment that disclosed.On the contrary, do not break away from spirit of the present invention and category, in the claim scope, the present invention more comprises those skilled in the art can conspicuous modification, change, rearrange, replace, replacement, design alternative and embodiment.Therefore, expectedly be that following claims comprise all modifications of advancing one one, change, rearrange, replace, replacement, design alternative and embodiment.
Claims (6)
1. the manufacture method of a light-emitting diode is characterized in that, comprising:
Base material is provided;
Form the light-emitting diode polycrystalline structure on described base material;
The described light-emitting diode polycrystalline structure of etching is to form hole;
Form transparent dielectric layer in described hole;
Engage conductive base and this light-emitting diode polycrystalline structure; And
Remove described base material.
2. manufacture method as claimed in claim 1 is characterized in that the material of described transparent dielectric layer is selected from SiO
2, Si
3N
4, the group that forms of BCB, polyimides.
3. manufacture method as claimed in claim 1 is characterized in that, further comprises forming adhesion layer on described conductive base, for the usefulness that engages this conductive base and this light-emitting diode polycrystalline structure.
4. manufacture method as claimed in claim 3 is characterized in that, the material of described adhesion layer is selected from and comprises the group that Au, Sn, In, Ag, Ge, Cu, Pb and alloy thereof are formed.
5. manufacture method as claimed in claim 1 is characterized in that, forms described light-emitting diode polycrystalline structure and comprises:
Form the first doping type semiconductor layer on this base material;
Form the luminescence activity layer on this first doping type semiconductor layer; And
Form the second doping type semiconductor layer on this luminescence activity layer.
6. manufacture method as claimed in claim 1 is characterized in that, the described light-emitting diode polycrystalline structure of etching exposes this base material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100080755A CN100440552C (en) | 2005-02-08 | 2005-02-08 | LED and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100080755A CN100440552C (en) | 2005-02-08 | 2005-02-08 | LED and production thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1819282A CN1819282A (en) | 2006-08-16 |
| CN100440552C true CN100440552C (en) | 2008-12-03 |
Family
ID=36919087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100080755A Active CN100440552C (en) | 2005-02-08 | 2005-02-08 | LED and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100440552C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6553541B2 (en) * | 2016-05-11 | 2019-07-31 | 日機装株式会社 | Deep UV light emitting element |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06151955A (en) * | 1992-10-29 | 1994-05-31 | Victor Co Of Japan Ltd | Semiconductor light emitting element |
| JPH06338634A (en) * | 1993-05-28 | 1994-12-06 | Victor Co Of Japan Ltd | Semiconductor light-emitting element array |
| US6740906B2 (en) * | 2001-07-23 | 2004-05-25 | Cree, Inc. | Light emitting diodes including modifications for submount bonding |
| US6818531B1 (en) * | 2003-06-03 | 2004-11-16 | Samsung Electro-Mechanics Co., Ltd. | Method for manufacturing vertical GaN light emitting diodes |
-
2005
- 2005-02-08 CN CNB2005100080755A patent/CN100440552C/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06151955A (en) * | 1992-10-29 | 1994-05-31 | Victor Co Of Japan Ltd | Semiconductor light emitting element |
| JPH06338634A (en) * | 1993-05-28 | 1994-12-06 | Victor Co Of Japan Ltd | Semiconductor light-emitting element array |
| US6740906B2 (en) * | 2001-07-23 | 2004-05-25 | Cree, Inc. | Light emitting diodes including modifications for submount bonding |
| US6818531B1 (en) * | 2003-06-03 | 2004-11-16 | Samsung Electro-Mechanics Co., Ltd. | Method for manufacturing vertical GaN light emitting diodes |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1819282A (en) | 2006-08-16 |
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