CN100438324C - Lc振荡器 - Google Patents
Lc振荡器 Download PDFInfo
- Publication number
- CN100438324C CN100438324C CNB038221810A CN03822181A CN100438324C CN 100438324 C CN100438324 C CN 100438324C CN B038221810 A CNB038221810 A CN B038221810A CN 03822181 A CN03822181 A CN 03822181A CN 100438324 C CN100438324 C CN 100438324C
- Authority
- CN
- China
- Prior art keywords
- oscillator
- circuit
- transistor
- coupled
- pmos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 28
- 230000008878 coupling Effects 0.000 claims description 10
- 238000010168 coupling process Methods 0.000 claims description 10
- 238000005859 coupling reaction Methods 0.000 claims description 10
- 230000003321 amplification Effects 0.000 abstract description 2
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 2
- 230000008859 change Effects 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000000266 injurious effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1209—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier having two current paths operating in a differential manner and a current source or degeneration circuit in common to both paths, e.g. a long-tailed pair.
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
- H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1221—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising multiple amplification stages connected in cascade
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
- H03B5/1243—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02078896 | 2002-09-20 | ||
EP02078896.4 | 2002-09-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1682433A CN1682433A (zh) | 2005-10-12 |
CN100438324C true CN100438324C (zh) | 2008-11-26 |
Family
ID=32010998
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038221810A Expired - Fee Related CN100438324C (zh) | 2002-09-20 | 2003-08-08 | Lc振荡器 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7176766B2 (zh) |
EP (1) | EP1543610B1 (zh) |
JP (1) | JP2006500815A (zh) |
CN (1) | CN100438324C (zh) |
AT (1) | ATE332031T1 (zh) |
AU (1) | AU2003253183A1 (zh) |
DE (1) | DE60306532T2 (zh) |
WO (1) | WO2004027978A1 (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7132901B2 (en) * | 2004-10-22 | 2006-11-07 | Skyworks Solutions, Inc. | Voltage controlled oscillator with varactor-less tuning |
JP2007068069A (ja) * | 2005-09-02 | 2007-03-15 | Alps Electric Co Ltd | 同調回路 |
CN1333522C (zh) * | 2006-04-14 | 2007-08-22 | 清华大学 | 片上cmos数控lc振荡器 |
KR100843225B1 (ko) * | 2007-01-08 | 2008-07-02 | 삼성전자주식회사 | 위상 잡음을 제어하는 전압 제어 발진기 및 그 이용 방법 |
KR100942697B1 (ko) | 2007-11-27 | 2010-02-16 | 한국전자통신연구원 | 커패시티브-디제너레이션 이중교차결합 전압제어발진기 |
JP5300035B2 (ja) * | 2009-01-05 | 2013-09-25 | フリースケール セミコンダクター インコーポレイテッド | 発振回路 |
US20110018646A1 (en) * | 2009-07-27 | 2011-01-27 | Electronics And Telecommunications Research Institute | Lc voltage-controlled oscillator |
US20120038429A1 (en) * | 2010-08-13 | 2012-02-16 | International Business Machines Corporation | Oscillator Circuits Including Graphene FET |
DE102012015730B3 (de) * | 2012-08-09 | 2014-01-30 | Infineon Technologies Ag | Oszillatorschaltung |
TWI495258B (zh) * | 2013-01-17 | 2015-08-01 | Univ Nat Chi Nan | Balanced mixing circuit |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6268778B1 (en) * | 1999-05-03 | 2001-07-31 | Silicon Wave, Inc. | Method and apparatus for fully integrating a voltage controlled oscillator on an integrated circuit |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6987425B1 (en) * | 2000-05-17 | 2006-01-17 | Marvell International Ltd. | Low phase noise MOS LC oscillator |
GB2379104A (en) * | 2001-08-21 | 2003-02-26 | Zarlink Semiconductor Ltd | Voltage controlled oscillators |
-
2003
- 2003-08-08 AU AU2003253183A patent/AU2003253183A1/en not_active Abandoned
- 2003-08-08 US US10/528,254 patent/US7176766B2/en not_active Expired - Fee Related
- 2003-08-08 WO PCT/IB2003/003648 patent/WO2004027978A1/en active IP Right Grant
- 2003-08-08 JP JP2004537387A patent/JP2006500815A/ja active Pending
- 2003-08-08 EP EP03797424A patent/EP1543610B1/en not_active Expired - Lifetime
- 2003-08-08 AT AT03797424T patent/ATE332031T1/de not_active IP Right Cessation
- 2003-08-08 DE DE60306532T patent/DE60306532T2/de not_active Expired - Lifetime
- 2003-08-08 CN CNB038221810A patent/CN100438324C/zh not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6268778B1 (en) * | 1999-05-03 | 2001-07-31 | Silicon Wave, Inc. | Method and apparatus for fully integrating a voltage controlled oscillator on an integrated circuit |
Non-Patent Citations (9)
Title |
---|
. . |
5~6 GHz-Band GaAs MESFET-Based Cross-Coupled Differential Oscillator MMICs With Low Phase-Noise Performance. Sang-Woong Yoon.IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS,Vol.11 No.12. 2001 * |
5~6 GHz-Band GaAs MESFET-Based Cross-CoupledDifferential Oscillator MMICs With Low Phase-NoisePerformance. Sang-Woong Yoon.IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS,Vol.11 No.12. 2001 |
A 2-GHz Low-Phase-Noise Integrated LC-VCO Set with Flicker-Noise Upconversion Minimization. Bram De Muer, M.Borremans, M.Dteyaert, and G.Li Puma.IEEE JOURNAL OF SOLID-STATE CIRCUITS,Vol.35 No.7. 2000 * |
A 2-GHz Low-Phase-Noise Integrated LC-VCO Set withFlicker-Noise Upconversion Minimization. Bram De Muer, M.Borremans, M.Dteyaert, and G.Li Puma.IEEE JOURNAL OF SOLID-STATE CIRCUITS,Vol.35 No.7. 2000 |
Fully Integrated 5.35-GHz CMOS VCOs and Prescalers. Chih-Ming Hung.IEEE TRANSACTIONS ON MICROWAVE THERY AND TECHNIQUES,Vol.49 No.1. 2001 |
Fully Integrated 5.35-GHz CMOS VCOs and Prescalers. Chih-Ming Hung.IEEE TRANSACTIONS ON MICROWAVE THERY AND TECHNIQUES,Vol.49 No.1. 2001 * |
Phase Noise in a Differential CMOS Voltage-Controlled Oscillator for RF Applications. Frank Herzel, Michael Pierschel, Peter Weger, and Marc Tiebout.IEEE TRANSACTION ON CIRCUITS AND SYSTEMS-Ⅱ: ANALOG AND DIGITAL SIGNAL PROCESSING,Vol.47 No.1. 2000 * |
Phase Noise in a Differential CMOS Voltage-ControlledOscillator for RF Applications. Frank Herzel, Michael Pierschel, Peter Weger, and MarcTiebout.IEEE TRANSACTION ON CIRCUITS AND SYSTEMS-Ⅱ: ANALOG AND DIGITAL SIGNAL PROCESSING,Vol.47 No.1. 2000 |
Also Published As
Publication number | Publication date |
---|---|
JP2006500815A (ja) | 2006-01-05 |
US20050212610A1 (en) | 2005-09-29 |
EP1543610A1 (en) | 2005-06-22 |
DE60306532D1 (de) | 2006-08-10 |
AU2003253183A1 (en) | 2004-04-08 |
DE60306532T2 (de) | 2007-07-05 |
US7176766B2 (en) | 2007-02-13 |
ATE332031T1 (de) | 2006-07-15 |
CN1682433A (zh) | 2005-10-12 |
WO2004027978A1 (en) | 2004-04-01 |
EP1543610B1 (en) | 2006-06-28 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: NXP CO., LTD. Free format text: FORMER OWNER: KONINKLIJKE PHILIPS ELECTRONICS N.V. Effective date: 20070810 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20070810 Address after: Holland Ian Deho Finn Applicant after: Koninkl Philips Electronics NV Address before: Holland Ian Deho Finn Applicant before: Koninklijke Philips Electronics N.V. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: III HOLDINGS 6, LLC Free format text: FORMER OWNER: KONINKL PHILIPS ELECTRONICS NV Effective date: 20150901 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150901 Address after: Delaware Patentee after: III Holding 6 limited liability company Address before: Holland Ian Deho Finn Patentee before: Koninkl Philips Electronics NV |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081126 Termination date: 20180808 |
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CF01 | Termination of patent right due to non-payment of annual fee |