CN100395618C - Metal complex, light source and backlight module - Google Patents
Metal complex, light source and backlight module Download PDFInfo
- Publication number
- CN100395618C CN100395618C CNB2004100918861A CN200410091886A CN100395618C CN 100395618 C CN100395618 C CN 100395618C CN B2004100918861 A CNB2004100918861 A CN B2004100918861A CN 200410091886 A CN200410091886 A CN 200410091886A CN 100395618 C CN100395618 C CN 100395618C
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- Prior art keywords
- light source
- layer
- metal complex
- doped compound
- metallic atom
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Abstract
The present invention discloses a metal complex, and a light source and a backlight module which use the metal complex. The metal complex comprises a metal atom, and a double-strand benzene-ring radix and a doping compound which are connected with the metal atom by using an N and an O; the size of the doping compound is 10<-6 >m to 10<-8 > m. The metal complex of the present invention, and the light source and the backlight module which use the metal complex have high light leaving brightness.
Description
[technical field]
The invention relates to a kind of metal complex and use the light source and the module backlight of this metal complex, especially about a kind of light source and module backlight that is used for the metal complex of liquid crystal indicator and uses this metal complex.
[background technology]
Because the liquid crystal itself in the liquid crystal indicator panel is not luminous, therefore, in order to reach the effect of demonstration, one planar light source device is provided for the liquid crystal indicator panel, module for example backlight, its function is to provide the planar light that brightness is abundant, be evenly distributed to the liquid crystal indicator panel, make normally display image of liquid crystal indicator panel, so planar light source device becomes one of key component of liquid crystal indicator.
Continuous expansion along with the liquid crystal indicator application, the particularly application of digital image product, the digital camera of using such as mobile phone, mobile phone, digital code camera etc. further promote for the requirement of the emitting brightness of employed module backlight in the liquid crystal indicator.
The light guide plate of common module backlight can only be with equalizing light rays, and can not improve the brightness of bright dipping, therefore will improve the emitting brightness of module backlight, need start with from the brightness that improves light source.
See also Fig. 1, it is the synoptic diagram of a kind of prior art module backlight, this module 1 backlight comprises a light guide plate 10 and a light source 19, this light guide plate 10 comprises an incidence surface 11, an exiting surface adjacent with this incidence surface 11 12, one and this exiting surface 12 opposed bottom surface 13 and side 14, these light source 19 relative these incidence surfaces 11 are provided with, be light emitting diode (LightEmitting Diode, LED) or cold-cathode fluorescence lamp (Cold Cathode FluorescentLamp, CCFL).Light sends from light source 19, enters light guide plate 10 through incidence surface 11, penetrates from exiting surface 12 behind the process scatter reflections in light guide plate 10.But because the restriction of light emitting diode and cold-cathode fluorescence lamp itself, its luminosity is 1,000～5,000cd/m
2, can not satisfy the more and more higher requirement of emitting brightness of module backlight.
[summary of the invention]
In order to overcome the not high shortcoming of prior art light source emitting brightness, the invention provides a kind of metal complex that can be used to produce the higher light source of luminance brightness.
The present invention also provides a kind of light source of using above-mentioned metal complex.
The present invention also provides a kind of module backlight of using above-mentioned light source.
The applied technical scheme of technical solution problem of the present invention is: a kind of metal complex is provided, this metallized metal complex compound comprises double-stranded phenyl ring base and the doped compound that a metallic atom, links to each other with this metallic atom with N and O, and wherein the size of this doped compound is 10
-6～10
-8Rice, this doped compound are the combination on a kind of or a kind of among ZnS, ZnTe, ZnSe, CdSe, CdTe and the GaN.
The applied technical scheme of technical solution problem of the present invention is: a kind of light source is provided; this light source comprises cathode layer, semiconductor layer, insulation course, metal complex layer, fluorescence coating, anode layer and the protective seam of arranging by layer; this metal complex comprises double-stranded phenyl ring base and the doped compound that a metallic atom, links to each other with this metallic atom with N and O, and wherein the size of this doped compound is 10
-6～10
-8Rice, this doped compound are the combination on a kind of or a kind of among ZnS, ZnTe, ZnSe, CdSe, CdTe and the GaN.
The applied technical scheme of technical solution problem of the present invention is: a kind of module backlight is provided; this module backlight comprises a light guide plate and a light source; this light guide plate comprises an incidence surface; one exiting surface adjacent with this incidence surface; the side that one relative this incidence surface with this exiting surface opposed bottom surface and is provided with; this light source this incidence surface relatively is provided with; it comprises the cathode layer of arranging by layer; semiconductor layer; insulation course; the metal complex layer; fluorescence coating; anode layer and protective seam; this metal complex comprises a metallic atom; one double-stranded phenyl ring base and the doped compound that links to each other with this metallic atom with N and O, wherein the size of this doped compound is 10
-6～10
-8Rice, this doped compound are the combination on a kind of or a kind of among ZnS, ZnTe, ZnSe, CdSe, CdTe and the GaN.
Compare with prior art, the invention has the beneficial effects as follows: light source of the present invention utilizes nano-meter characteristic by adding metal complex, has improved emitting brightness by a relatively large margin.
[description of drawings]
Fig. 1 is the synoptic diagram of a kind of prior art module backlight.
Fig. 2 is the structural representation of metal complex of the present invention.
Fig. 3 is the structural representation of light source of the present invention.
Fig. 4 is the schematic perspective view of the present invention's module backlight.
Fig. 5 is the side view of the present invention's module backlight.
[embodiment]
Seeing also Fig. 2, is the structural representation of metal complex of the present invention.This metal complex 2 comprises double-stranded phenyl ring base and the doped compound X that a metallic atom M, links to each other with this metallic atom M with N and O, this metallic atom M can be any one among Al, Mg, Zn, Be, Ba and the Ga, this doped compound X can be combination one or any two kinds among ZnS, ZnTe, ZnSe, CdSe, CdTe and the GaN, and this doped compound X size is 10
-6～10
-8Rice.
Seeing also Fig. 3, is the structural representation of light source of the present invention.This light source 3 comprises cathode layer 31, semiconductor layer 32, insulation course 33, metal complex layer 2, fluorescence coating 35, anode layer 36 and the protective seam of arranging by layer 37.Wherein this cathode layer 31 is metals, can be a kind of or at least two kinds combination among Cu, Ag and the Au; These insulation course 33 materials are SiN
x, be printed on pattern above, can allow portions of electronics pass, this insulation course 33 can strengthen chemical vapor deposition, ion beam sputtering by reactive sputtering, chemical vapor deposition, ion, method such as double ion beam sputtered makes; These fluorescence coating 35 materials can be to send the second aluminium garnet doping terbium of green glow, can send the doped sno_2 europium of ruddiness and can send yttrium silicate doped with cerium of blue light etc. according to different demands, and this fluorescence coating 35 is subjected to sending light after the electron bombard; This anode layer 36 is tin indium oxide, InO
xAnd a kind of or at least two kinds combination among the ZnO, wherein indium tin oxide layer can get by dc reactive sputtering, RF-reactively sputtered titanium in Ar and oxygen gas mixture environment; These protective seam 37 materials are SiO
2, SiO
xIn a kind of or at least two kinds combination, can make by methods such as dc reactive sputtering, RF-reactively sputtered titanium in Ar and oxygen gas mixture environment.By between anode layer 36 and cathode layer 31, applying voltage, produce electronics by semiconductor layer 32, and pass insulation course 33; bump metal complex 2, excitation electron impact fluorescence layer 35 sends light; pass protective clear layer 37 again, can reach the effect of supply light.Because when the material size reaches Nano grade (1 * 10
-9Rice) after, bigger variation has all taken place as physical property, chemical property in many character, and the present invention makes the luminosity of metal complex 2 greatly promote by the dopen Nano compound, can reach 10,000～20,000cd/m
2, light emitting diode and cold-cathode fluorescence lamp have significant lifting relatively.
Seeing also Fig. 4 and Fig. 5, is respectively the schematic perspective view and the side view of the present invention's module backlight.This module 4 backlight comprises a light guide plate 40 and a light source 3, this light guide plate 40 comprises an incidence surface 41, exiting surfaces 42 adjacent with this incidence surface 41 and the side 44 of relative these incidence surface 41 settings with these exiting surface 42 opposed bottom surface 43 and, these light source 3 relative these incidence surfaces 41 settings.Wherein, this light guide plate 40 is wedge shape light guide plate, and the width of its incidence surface 41 is greater than the width of this side 44, and this exiting surface 42 comprises a plurality of continuous channel devices 45, its groove density increases along with the increase of the distance of groove and light source 3, reaches the emitting uniform purpose with this; This bottom surface 43 comprises a plurality of discontinuous groove devices 46, and its groove width reduces along with the increase of the distance of groove and light source 3.
It is described that module backlight of the present invention is not limited to present embodiment, also can further comprise brightening piece, diffusion sheet, reflector plate and polaroid etc. as this module backlight; The bottom surface of this light guide plate 40 also can be provided with a plurality of sites to strengthen the uniformity coefficient that penetrates light.
Claims (17)
1. metal complex comprises: double-stranded phenyl ring base and doped compound that a metallic atom, links to each other with this metallic atom with N and O, it is characterized in that: the size of this doped compound is 10
-6～10
-8Rice, this doped compound are the combination on a kind of or a kind of among ZnS, ZnTe, ZnSe, CdSe, CdTe and the GaN.
2. metal complex according to claim 1 is characterized in that: this metallic atom be in Al, Mg, Zn, Be, Ba and the Ga group any one.
3. light source; it comprises cathode layer, semiconductor layer, insulation course, metal complex layer, fluorescence coating, anode layer and the protective seam of arranging by layer; this metal complex comprises double-stranded phenyl ring base and the doped compound that a metallic atom, links to each other with this metallic atom with N and O, and it is characterized in that: the size of this doped compound is 10
-6～10
-8Rice, this doped compound are the combination on a kind of or a kind of among ZnS, ZnTe, ZnSe, CdSe, CdTe and the GaN.
4. light source according to claim 3 is characterized in that: this cathode layer is a metal.
5. light source according to claim 4 is characterized in that: this metal is a kind of among Cu, Ag and the Au.
6. light source according to claim 4 is characterized in that: this metal is at least two kinds combination among Cu, Ag and the Au.
7. light source according to claim 3 is characterized in that: this insulating layer material is SiN
x
8. light source according to claim 3 is characterized in that: this anode layer is tin indium oxide, InO
xAnd it is a kind of among the ZnO.
9. light source according to claim 3 is characterized in that: this anode layer is tin indium oxide, InO
xAnd at least two kinds combination among the ZnO.
10. light source according to claim 3 is characterized in that: this protective layer material is SiO
2, SiO
xIn a kind of.
11. light source according to claim 1 is characterized in that: this protective layer material is SiO
2, SiO
xIn at least two kinds combination.
12. module backlight; comprise: a light guide plate and a light source; this light guide plate comprises an incidence surface; one exiting surface adjacent with this incidence surface; the side that one relative this incidence surface with this exiting surface opposed bottom surface and is provided with; this light source this incidence surface relatively is provided with; comprise the cathode layer of arranging by layer; semiconductor layer; insulation course; the metal complex layer; fluorescence coating; anode layer and protective seam; this metal complex comprises a metallic atom; one double-stranded phenyl ring base and the doped compound that links to each other with this metallic atom with N and O, it is characterized in that: the size of this doped compound is 10
-6～10
-8Rice, this doped compound are the combination on a kind of or a kind of among ZnS, ZnTe, ZnSe, CdSe, CdTe and the GaN.
13. module backlight according to claim 12 is characterized in that: the width of this incidence surface is greater than the width of this side.
14. module backlight according to claim 12 is characterized in that: this bottom surface comprises a plurality of discontinuous groove devices.
15. module backlight according to claim 14 is characterized in that: the groove width of these a plurality of groove devices reduces with the increase of the distance of itself and light source.
16. module backlight according to claim 14 is characterized in that: this exiting surface comprise a plurality of continuous channel devices.
17. module backlight according to claim 16 is characterized in that: the groove density of these a plurality of groove devices increases with the increase of the distance of itself and light source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100918861A CN100395618C (en) | 2004-12-25 | 2004-12-25 | Metal complex, light source and backlight module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100918861A CN100395618C (en) | 2004-12-25 | 2004-12-25 | Metal complex, light source and backlight module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1797094A CN1797094A (en) | 2006-07-05 |
| CN100395618C true CN100395618C (en) | 2008-06-18 |
Family
ID=36818268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100918861A Expired - Fee Related CN100395618C (en) | 2004-12-25 | 2004-12-25 | Metal complex, light source and backlight module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100395618C (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1190322A (en) * | 1997-01-27 | 1998-08-12 | 城户淳二 | Organic Electroluminescent devices |
| CN1236289A (en) * | 1998-03-02 | 1999-11-24 | 城户淳二 | Organic electroluminescent devices |
| CN1261760A (en) * | 1998-12-16 | 2000-08-02 | 城户淳二 | Organic electroluminescence device |
| CN1324912A (en) * | 2000-05-19 | 2001-12-05 | 中国科学院长春光学精密机械与物理研究所 | Fluorescnet material to convert and combine blue light of LED into white light |
| US20020055015A1 (en) * | 2000-09-20 | 2002-05-09 | Mitsubishi Chemical Corporation | Organic electroluminescent device |
| US20020125818A1 (en) * | 2000-10-04 | 2002-09-12 | Mitsubishi Chemical Corporation | Organic electroluminescent device |
| JP2003077674A (en) * | 2000-10-04 | 2003-03-14 | Mitsubishi Chemicals Corp | Organic electroluminescent element |
| CN1532953A (en) * | 2003-03-25 | 2004-09-29 | 威凯科技股份有限公司 | White light-emitting diode element |
-
2004
- 2004-12-25 CN CNB2004100918861A patent/CN100395618C/en not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1190322A (en) * | 1997-01-27 | 1998-08-12 | 城户淳二 | Organic Electroluminescent devices |
| CN1236289A (en) * | 1998-03-02 | 1999-11-24 | 城户淳二 | Organic electroluminescent devices |
| CN1261760A (en) * | 1998-12-16 | 2000-08-02 | 城户淳二 | Organic electroluminescence device |
| CN1324912A (en) * | 2000-05-19 | 2001-12-05 | 中国科学院长春光学精密机械与物理研究所 | Fluorescnet material to convert and combine blue light of LED into white light |
| US20020055015A1 (en) * | 2000-09-20 | 2002-05-09 | Mitsubishi Chemical Corporation | Organic electroluminescent device |
| US20020125818A1 (en) * | 2000-10-04 | 2002-09-12 | Mitsubishi Chemical Corporation | Organic electroluminescent device |
| JP2003077674A (en) * | 2000-10-04 | 2003-03-14 | Mitsubishi Chemicals Corp | Organic electroluminescent element |
| CN1532953A (en) * | 2003-03-25 | 2004-09-29 | 威凯科技股份有限公司 | White light-emitting diode element |
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| Publication number | Publication date |
|---|---|
| CN1797094A (en) | 2006-07-05 |
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