CN100383994C - Method for preparing phase-change memory device unit using chalcogenide compound nanometer material - Google Patents
Method for preparing phase-change memory device unit using chalcogenide compound nanometer material Download PDFInfo
- Publication number
- CN100383994C CN100383994C CNB200510110783XA CN200510110783A CN100383994C CN 100383994 C CN100383994 C CN 100383994C CN B200510110783X A CNB200510110783X A CN B200510110783XA CN 200510110783 A CN200510110783 A CN 200510110783A CN 100383994 C CN100383994 C CN 100383994C
- Authority
- CN
- China
- Prior art keywords
- memory device
- device unit
- chalcogenide compound
- phase transformation
- transformation memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The present invention relates to a method for preparing a phase change memory unit by using sulfide compound nano material, which particularly to comprises a method for preparing sulfide compound nano material and a method used for preparing the phase change memory unit by using the sulfide compound nano material. The sulfide compound nano material is prepared by covering a layer of sulfide compound film on the surface of one-dimensional insulated nano material, and the sulfide compound nano material is then integrated with an electrode of a phase change memory cell by using nano processing technology, so that the phase change memory cell of a nano level is prepared. The material with a nano structure has relatively mature preparing process and small size, so that sulfide compound nano material with small size can be prepared easily. By using the characteristic that the section area of the sulfide compound nano material can be very small, the sulfide compound nano material which is applied to the phase change memory unit can greatly increase the current density, can improve the heat efficiency of the effective phase change region of the sulfide compound, can decrease the operating current, and can reduce the power consumption.
Description
Technical field
The present invention relates to a kind of preparation method of chalcogenide compound nanometer material and utilize chalcogenide compound nanometer material to prepare the method for phase transformation memory device unit.The invention belongs to the micro-nano electronic technology field.
Background technology
Phase-change random access memory (PC-RAM, Phase Change-Random Access Memory) technology is based on Ovshinsky at late 1960s (Phys.Rev.Lett., 21,1450～1453,1968) beginning of the seventies (Appl.Phys.Lett., 18,254～257,1971) phase-change thin film of Ti Chuing can be applied to that the conception of phase change memory medium sets up.The characteristics of PC-RAM memory critical material phase-change alloy are can make material between amorphous state and polycrystalline attitude reversible transition take place when giving its electric pulse.Present high resistant when being in amorphous state, present low-resistance during the polycrystalline attitude, amplitude of variation can reach several magnitude.But because the restriction of technology of preparing and technology, phase-change material can only just undergo phase transition than under the highfield, and this has just limited the process of its practicability development.Along with the development of nanometer technology of preparing and technology, effective phase change region size of phase-change material can narrow down to nanometer scale in the device, and material undergoes phase transition that required voltage reduces greatly, power consumption reduces, and great variety has also taken place the performance of material simultaneously.
PC-RAM memory owing to have reads at a high speed, high erasable number of times, non-volatile, component size is little, low in energy consumption, advantages such as cost is low, can multistagely store, anti-strong motion and radioresistance, thought flash memories that most possible replacement is present by international semiconductor TIA and become following memory main product and become the device of commercial product at first.
Major companies such as Ovonyx, Intel, Samsung, STMicroelectronics, Hitachi, IBM, Phlips and British Aerospace are arranged in the world in the research of carrying out the PC-RAM memory, carrying out at present that technology is improved and the R﹠D work of manufacturability aspect.At the beginning of 2004, Samsung company adopts the technology of 0.18 μ m to prepare the PC-RAM memory test print of 64M, but the operating current of device is also bigger, and power consumption is higher, and the stability of device is still waiting further raising.The PC-RAM memory realizes that one of business-like key is reducing of storage operation electric current, at present the major measure that adopts be reduce between heating electrode material and the phase-change material contact area, increase heating electrode material and phase-change material resistance, improve device architecture design etc.Yet along with reducing of device feature size, present semiconductor process technology is difficult to satisfy the demand of the little structure preparation to tens even several nanometers of size.Utilize conventional nano material preparation technology to be difficult to prepare the nano wire or the nanotube of chalcogenide compound multicomponent alloy, yet, the inventor considers that employing can be easier to prepare its nano material in the method for surface coverage one deck chalcogenide compound multicomponent alloy of nano wire or nanotube, can integrate chalcogenide compound nanometer material and electrode by nanometer assembling or process technology then, constitute phase transformation memory device unit.Because the lateral dimension of nano material can be very little, the lateral dimension of the chalcogenide compound nanometer material of feasible preparation might reach very little, can reduce the operating current of device greatly, this design starting point of the present invention just.
Summary of the invention
The objective of the invention is to seek a kind of preparation method of chalcogenide compound nanometer material, and utilize this chalcogenide compound nanometer material to prepare phase transformation memory device unit, to reach the purpose that reduces the device cell operating current, reduces power consumption.
The preparation process of chalcogenide compound nanometer material provided by the present invention and the method for phase transformation memory device unit, be characterised in that a kind of method that adopts chalcogenide compound nanometer material to prepare phase transformation memory device unit, it is characterized in that adopting the monodimension nanometer material surface coverage one deck chalcogenide compound film of thin film preparation process in insulation, prepare the chalcogenide compound nanometer material of the monodimension nanometer material that is coated on insulation, and then adopt nanofabrication technique that the electrode material of chalcogenide compound nanometer material and phase transformation memory device unit is integrated again, prepare the phase transformation memory device unit of nanoscale.
The technical process of concrete preparation is:
(1) prepares the monodimension nanometer material (as shown in Figure 1) of insulation, used method is any one in physical preparation method or the chemical synthesis process, wherein, physical preparation method comprises thermal evaporation, vapor-solid growth method, laser ablation method, and chemical synthesis process comprises solution-liquid phase-solid phase method, polymerization, sol-gel process, metallo-organic compound vapour phase epitaxy method.Insulating material wherein is the mixture of a kind of or at least two kinds of formations in oxide, nitride, carbide, the sulfide; Monodimension nanometer material be in nano wire, nano wire, nanometer rods, nanotube, the nano belt any one, the cross sectional dimensions of monodimension nanometer material is 1-200nm.
(2) monodimension nanometer material surface coverage one deck chalcogenide compound film (as shown in Figure 2) of insulation, prepare chalcogenide compound nanometer material, used thin film preparation process be in sputtering method, evaporation, plasma ion assisted deposition method, chemical vapour deposition technique, the atomic layer deposition method any one, chalcogenide compound wherein is for containing a kind of compound of the 6th major element at least, and film thickness is 1-100nm.
(3) on substrate, prepare the electrode of phase transformation memory device unit, used method be in conventional photoetching technique, focused-ion-beam lithography technology, atomic force microscope process technology, electron beam lithography method, extreme ultraviolet photolithographic method or the nano impression method any, substrate wherein is silicon substrate, glass, GaAs, the SiO on silicon chip, the insulating barrier
2, in plastics or the crystalline material any; Electrode material can be the monometallic material, and as a kind of among W, Pt, Au, Ti, Al, Ag, Cu or the Ni, or its combination (alloy material) constitutes.(Fig. 3 and 9)
(4) electrode material of chalcogenide compound nanometer material and phase transformation memory device unit is integrated, used method be in self-assembling technique, atomic force microscope process technology or the micro-nano manipulation technology any one; Chalcogenide compound nanometer material arrange for laterally (as shown in Figure 4) or vertically in (shown in Figure 11 and 12) any one.
(5) on chalcogenide compound nanometer material, cover the layer of insulation material layer again, used technology be in sputtering method, evaporation, atomic layer deposition method, plasma ion assisted deposition method, chemical vapour deposition technique, metallo-organic decomposition process or the laser assistant depositing method any one; Heat-insulating material wherein is the rod compound of a kind of or at least two kinds of formations in oxide, nitride, carbide, the sulfide, and thickness is 10-200nm.(Fig. 5 and 11)
(6) last etching insulation material layer is drawn two electrodes of phase transformation memory device unit, and the method for employing is conventional semiconductor technology; As the material of extraction electrode be among W, Pt, Au, Ti, Al, Ag, Cu or the Ni any, or its alloy material.(Fig. 6 and 12)
The present invention proposes a kind of phase transformation memory device unit preparation method, specifically comprise: the preparation method of chalcogenide compound nanometer material, adopt nanofabrication technique that chalcogenide compound nanometer material and phase transformation memory device unit are integrated, the preparation sodium electronic phase-variable memory device unit.This device cell preparation method's characteristics are: the effective coverage size that chalcogenide compound undergoes phase transition in the device cell can be easy to be reduced to tens even several nanometer, can reduce the size of device cell significantly, reduce the operating current and the power consumption of device cell.The present invention moves towards practicability and improves the device integrated level that for promoting phase transition storage very high practical value is arranged.
Description of drawings
The transverse view and the sectional view of the monodimension nanometer material pipe of Fig. 1 insulation
The transverse view and the sectional view of the chalcogenide compound nanotube of the inner fill insulant of Fig. 2
Two electrodes of Fig. 3 phase transformation memory device unit
Fig. 4 chalcogenide compound nanotube and phase transformation memory device unit electrode integrated
Fig. 5 covers the layer of insulation material layer on chalcogenide compound nanotube and electrode
Fig. 6 etching insulation material layer is also drawn two electrodes of phase transformation memory device unit
The scanning electron microscopy pattern of the ZnO nano wire of Fig. 7 thermal evaporation preparation
The scanning electron microscopy pattern of the single ZnO nano wire that Fig. 8 obtains after ultrasonic dispersion
Fig. 9 prepares the bottom electrode of phase transformation memory device unit
Figure 10 prepares SiO on bottom electrode
2Film, and at SiO
2Prepare cylindrical hole in the film
Figure 11 places the chalcogenide compound nanotube in cylindrical hole, and cylindrical hole SiO
2Fill full
Figure 12 prepares the top electrode of phase transformation memory device unit, and its bottom electrode is drawn
Among the figure: the monodimension nanometer material of 100 insulation; 200 chalcogenide compound material layers; 300 chalcogenide compound nanotubes; The electrode of 400 phase transformation memory device units; The 401W thin layer; The 402TiN thin layer; 500 insulation material layers; 600 extraction electrode material layers; 700 substrates; 800 cylindrical holes
Embodiment
Further specify substantive distinguishing features of the present invention and obvious improvement below by specific embodiment, but the present invention only limiting to embodiment absolutely not, also is that described embodiment limits the present invention absolutely not.
Embodiment 1
The detailed process that thermal evaporation of the present invention prepares the chalcogenide compound nanotube is as follows:
Step 1: adopt the resistance-type horizontal tube furnace to prepare the One-Dimensional ZnO nanostructure.Used evaporation source is that purity is 99.999% high-purity zinc in the experiment; The carrier of metallic zinc and product One-Dimensional ZnO nanostructure is a quartz boat, and the spacing between evaporation source and the quartz boat is 10-100mm; Feed high-purity argon gas as protective gas before the heating and in the heating process, the flow of argon gas is 8L/min; The resistance-type horizontal tube furnace is begun heating from room temperature, and temperature reaches 900 ℃ up to pipe furnace central authorities, and its heating rate is 40 ℃/min, and pipe furnace is incubated 1-4 hour down at 900 ℃, and the argon flow amount of this moment is 4-6L/min; After reaction finished, body of heater naturally cooled to room temperature, and the argon flow amount of this moment is 4-6L/min, feeds the O of 0.1L/min simultaneously
2Pull out quartz boat, on quartz boat, promptly be covered with the white cotton flocculent substance, it is characterized in that white, certain viscosity is arranged, softness and extremely loose; The sample segment of collecting ultrasonic dispersion treatment 10 minutes in absolute ethyl alcohol, get certain drips of solution then on silicon chip, treat that solution evaporation finishes after, be deposited on sample topography on the silicon chip with sem observation.Prepared ZnO monodimension nanometer material as shown in Figure 7, its diameter is in the 5-100nm scope, length is that the 1-20 micron does not wait, isolated diameter be about 10nm single ZnO monodimension nanometer material pattern as shown in Figure 8.Its laterally and schematic cross-section as shown in Figure 1.
Step 2: the silicon chip that is dispersed with the ZnO monodimension nanometer material is put into the reaction chamber of magnetron sputtering, adopt magnetron sputtering method to prepare chalcogenide compound Ge at ZnO monodimension nanometer material last layer
2Sb
2Te
5Phase-change thin film, technological parameter is: background air pressure is 1 * 10
-4Pa, Ar gas air pressure is 0.6Pa during sputter, and sputtering power is 200W, and underlayer temperature is 25 ℃, and film thickness is 20nm.Just covered the thick Ge of the about 20nm of one deck like this on the surface of ZnO monodimension nanometer material
2Sb
2Te
5Film, so far, inside is filled with the Ge of ZnO nano material
2Sb
2Te
5Nanotube has prepared success, and its external diameter is about 50nm.(Fig. 2)
The preparation process of utilizing the chalcogenide compound nanotube to prepare phase transformation memory device unit of the present invention is specific as follows:
Step 3: substrate adopts silicon chip, adopts thermal oxidation method to prepare one deck SiO on silicon chip
2Film, film thickness are 100nm.
Step 4: at SiO
2Adopt magnetron sputtering power backup utmost point W film on the film, technological parameter is: background air pressure is 1 * 10
-4Pa, Ar gas air pressure is 0.08Pa during sputter, and sputtering power is 400W, and underlayer temperature is 25 ℃, and film thickness is 100nm.
Step 5: adopt magnetron sputtering method to prepare heating electrode material TiN film on W film, technological parameter is: background air pressure is 1 * 10
-4Pa, air pressure is 0.2Pa during sputter, Ar/N
2Gas flow ratio be 1: 1, sputtering power is 300W, underlayer temperature is 25 ℃, film thickness is 50nm.
Step 6: adopt common semiconductor processes to prepare two electrodes of phase transformation memory device unit, the big end of electrode is the square of 10 microns of the length of sides, and small end is a rectangle, long and widely is respectively 10 and 3 microns, and the spacing of two electrode diameters is 1 micron.(Fig. 3)
Step 7: the Ge of preparation in the step 2
2Sb
2Te
5The two ends of nanotube adopt the atomic force microscope manipulation technology to transfer to respectively on two electrodes in the step 6, and make contact between the two good.(Fig. 4)
Step 8: adopt magnetron sputtering method to prepare SiO
2Adiabatic film covers the surface of figure among Fig. 4, and technological parameter is: background air pressure is 1 * 10
-4Pa, Ar gas air pressure is 0.12Pa during sputter, and sputtering power is 400W, and underlayer temperature is 25 ℃, and film thickness is 60nm.(Fig. 5)
Step 9: adopt common semiconductor processes to etch away SiO on the square end of two electrodes of phase transformation memory device unit
2Adiabatic film adopts magnetron sputtering power backup utmost point W film then, and two electrodes are drawn, and technological parameter is: background air pressure is 1 * 10
-4Pa, Ar gas air pressure is 0.08Pa during sputter, and sputtering power is 300W, and underlayer temperature is 25 ℃, and film thickness is 200nm.Thereby prepared complete phase transformation memory device unit.(Fig. 6)
Embodiment 2
Step 1-5 is identical among step 1-5 and the embodiment 1;
Step 6: adopt common semiconductor processes to prepare bottom electrode in two electrodes of phase transformation memory device unit, electrode is the square of 10 microns of the length of sides.(Fig. 9)
Step 7: adopt magnetron sputtering method to prepare SiO
2Adiabatic film covers the surface of electrode in the step 6, and technological parameter is: background air pressure is 1 * 10
-4Pa, Ar gas air pressure is 0.12Pa during sputter, and sputtering power is 400W, and underlayer temperature is 25 ℃, and film thickness is 300nm.The employing common semiconductor processes etches away the part Si O on the bottom electrode
2Adiabatic film forms diameter and is about 200nm, the degree of depth is the cylindrical hole of 310nm.(Figure 10)
Step 8: the Ge of preparation in the step 2
2Sb
2Te
5Nanotube adopts the atomic force microscope manipulation technology to put into the cylindrical hole of step 7, and makes Ge
2Sb
2Te
5The nanotube lower end contacts with bottom electrode well, then adopts chemical gaseous phase depositing process to fill full SiO in cylindrical hole
2Heat-insulating material, it is flat to adopt chemical Mechanical Polishing Technique that sample surfaces is thrown at last.(Figure 11)
Step 9: adopt magnetron sputtering method at SiO
2Last preparation electrode W film, technological parameter is: background air pressure is 1 * 10
-4Pa, Ar gas air pressure is 0.08Pa during sputter, and sputtering power is 300W, and underlayer temperature is 25 ℃, and film thickness is 200nm.Adopt common semiconductor processes to prepare the top electrode of phase transformation memory device unit then, and make top electrode and Ge
2Sb
2Te
5End in contact is good on the nanotube.Adopt common semiconductor processes that the bottom electrode of phase transformation memory device unit is drawn at last, thereby prepared complete phase transformation memory device unit.(Figure 12)
Embodiment 3
The Ge in embodiment 1 or 2
2Sb
2Te
5Phase-change material changes Sb into
2Te
3Or Si
2Sb
2Te
5Or (SiGe)
2Sb
2Te
5Or the SiTe phase-change material, remainder is identical with embodiment 1 or 2 respectively.
Embodiment 4
ZnO monodimension nanometer material in embodiment 1,2 or 3 is changed into SiC or TeO
2Or MgO or ZnS monodimension nanometer material, remainder is identical with embodiment 1,2 or 3 respectively.
Embodiment 5
TiN film in embodiment 1,2,3 or 4 is changed into TiAlN or TiW alloy, and remainder is identical with embodiment 1,2,3 or 4 respectively.
Embodiment 6
Change fill the chemical vapour deposition technique that cylindrical hole adopted in embodiment 1,2,3,4 or 5 as atomic layer deposition method into, remainder is identical with embodiment 1,2,3,4 or 5 respectively.
Embodiment 7
Extraction electrode W film in embodiment 1,2,3,4,5 or 6 is changed into Al or Cu film, and remainder is identical with embodiment 1,2,3,4,5 or 6 respectively.
Embodiment 8
Insulating material nano wire in embodiment 1,2,3,4,5,6 or 7 is changed into insulating material nano belt or nanotube, and remainder is identical with embodiment 1,2,3,4,5,6 or 7 respectively.
Embodiment 9
The thermal evaporation of preparation insulating material one-dimensional nano structure in embodiment 1,2,3,4,5,6,7 or 8 is changed into the chemical solution synthetic method, and remainder is identical with embodiment 1,2,3,4,5,6,7 or 8 respectively.
Claims (9)
1. method that adopts chalcogenide compound nanometer material to prepare phase transformation memory device unit, it is characterized in that adopting the monodimension nanometer material surface coverage one deck chalcogenide compound film of thin film preparation process in insulation, prepare the chalcogenide compound nanometer material on the monodimension nanometer material that is coated on insulation, and then adopt nanofabrication technique that the electrode material of chalcogenide compound nanometer material and phase transformation memory device unit is integrated again, prepare the phase transformation memory device unit of nanoscale.
2. prepare the method for phase transformation memory device unit by the described employing chalcogenide compound nanometer material of claim 1, it is characterized in that
The step of preparation process of the described chalcogenide compound nanometer material of A is:
(1) at first prepares the monodimension nanometer material that cross sectional dimensions is the insulation of 1-200nm;
(2) at the monodimension nanometer material surface coverage chalcogenide compound film of insulation, the thickness of chalcogenide compound film is 1-100nm;
The step of preparation process of the phase transformation memory device unit of the described nanoscale of B is:
(1) on substrate, prepares the electrode of phase transformation memory device unit;
(2) chalcogenide compound nanometer material of steps A preparation and the electrode material of phase transformation memory device unit are integrated;
(3) cover the layer of insulation material layer again on chalcogenide compound nanometer material, with protection chalcogenide compound nanotube and adjusting heat balance, the insulating material layer thickness is 10-200nm;
(4) adopt nanofabrication technique that the electrode of phase transformation memory device unit is drawn.
3. the method for preparing phase transformation memory device unit by claim 1 or 2 described employing chalcogenide compound nanometer materials, it is characterized in that the preparation of the monodimension nanometer material of described insulation, the method for employing is any one in physical preparation method or the chemical synthesis process; Wherein, physical preparation method comprises thermal evaporation, gas one solid growth method or laser ablation method, and chemical synthesis process comprises solution one liquid phase one solid phase method, polymerization, sol-gel method or metallo-organic compound vapour phase epitaxy method; Insulating material wherein constitute by a kind of in oxide, nitride, carbide, the sulfide or at least two kinds form mixture and constitute.
4. the method for preparing phase transformation memory device unit by claim 1 or 2 described employing chalcogenide compound nanometer materials, it is characterized in that the method for monodimension nanometer material surface coverage chalcogenide compound film in insulation is to adopt thin film preparation process, in sputtering method, evaporation, plasma ion assisted deposition method, chemical vapour deposition technique and the atomic layer deposition method any one; Described chalcogenide compound is for containing a kind of compound of the 6th major element at least.
5. the method for preparing phase transformation memory device unit by claim 1 or 2 described employing chalcogenide compound nanometer materials, when it is characterized in that preparing the nanoscale phase transformation memory device unit, the method that electrode adopted of preparing phase transformation memory device unit on substrate may further comprise the steps: photoetching, etching, integrated, and wherein lithography step can adopt in electron beam lithography method, extreme ultraviolet photolithographic method and the nano impression method any; Etch step can adopt the focused-ion-beam lithography technology, and integrated step can adopt the atomic force microscope process technology; Substrate is silicon substrate, glass, GaAs, the SiO on silicon chip, the insulating barrier
2With in the plastics any one; Electrode material is selected from a kind of monometallic material among W, Pt, Au, Ti, Al, Ag, Cu and the Ni, or at least two kinds are combined into alloy material.
6. the method for preparing phase transformation memory device unit by claim 1 or 2 described employing chalcogenide compound nanometer materials is characterized in that it is in self-assembling technique and the atomic force microscope process technology any one that electrode material with chalcogenide compound nanometer material and phase transformation memory device unit integrates the method that is adopted; The arrangement mode of chalcogenide compound nanometer material be laterally or vertically any one.
7. the method for preparing phase transformation memory device unit by claim 1 or 2 described employing chalcogenide compound nanometer materials, it is characterized in that on chalcogenide compound nanometer material, covering in the nanoscale phase transformation memory device unit preparation one deck insulation material layer, the method for employing be in sputtering method, evaporation, atomic layer deposition method, plasma ion assisted deposition method, chemical vapour deposition technique, metallo-organic decomposition process and the laser assistant depositing method any one; Insulating material wherein is that a kind of formation or at least two kinds of formation mixtures in oxide, nitride, carbide, the sulfide constitute.
8. by the preparation method of the described phase transformation memory device unit of claim 2, it is characterized in that two electrodes of phase transformation memory device unit are drawn, the method for employing is a semiconductor technology; As the material of extraction electrode is among W, Pt, Au, Ti, Al, Ag, Cu and the Ni any one.
9. the method for preparing phase transformation memory device unit by claim 1 or 2 described employing chalcogenide compound nanometer materials, the monodimension nanometer material that it is characterized in that described insulation are a kind of in nano wire, nano wire, nanometer rods, nanotube, the nano belt.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200510110783XA CN100383994C (en) | 2005-11-25 | 2005-11-25 | Method for preparing phase-change memory device unit using chalcogenide compound nanometer material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200510110783XA CN100383994C (en) | 2005-11-25 | 2005-11-25 | Method for preparing phase-change memory device unit using chalcogenide compound nanometer material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1801501A CN1801501A (en) | 2006-07-12 |
| CN100383994C true CN100383994C (en) | 2008-04-23 |
Family
ID=36811355
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB200510110783XA Active CN100383994C (en) | 2005-11-25 | 2005-11-25 | Method for preparing phase-change memory device unit using chalcogenide compound nanometer material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100383994C (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100461485C (en) * | 2007-01-17 | 2009-02-11 | 中国科学院上海微***与信息技术研究所 | Current-limiting device based on sulfur series compound phase-change material and method for making the same |
| CN111180578A (en) * | 2019-12-25 | 2020-05-19 | 华东师范大学 | Phase change material nanowire and preparation method thereof |
| CN112701221B (en) * | 2020-12-25 | 2022-09-13 | 华中科技大学 | Phase change memory based on nano current channel |
| CN112713242B (en) * | 2020-12-25 | 2022-08-30 | 华中科技大学 | Preparation method of phase change memory based on nano current channel |
| CN112820827A (en) * | 2021-02-19 | 2021-05-18 | 智汇工场(深圳)科技企业(有限合伙) | Phase-change device and preparation method thereof, optical excitation modulation method and electric excitation modulation method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1507088A (en) * | 2002-12-13 | 2004-06-23 | ض� | Horizontal phase change memory and producing method thereof |
| EP1473767A2 (en) * | 2003-05-01 | 2004-11-03 | Samsung Electronics Co., Ltd. | Method of forming conductive line for semiconductor device using carbon nanotube and semiconductor device manufactured using the method |
| US20040251551A1 (en) * | 2003-06-11 | 2004-12-16 | Horii Hideki | Phase changeable memory devices including carbon nano tubes and methods for forming the same |
| CN1588613A (en) * | 2004-08-06 | 2005-03-02 | 中国科学院上海微***与信息技术研究所 | Process for preparing nano phase change storage device unit |
| CN1588637A (en) * | 2004-08-06 | 2005-03-02 | 中国科学院上海微***与信息技术研究所 | Process for preparing nano electronic phase change storage |
| CN1650444A (en) * | 2002-03-15 | 2005-08-03 | 阿克松技术公司 | Programmable structure, an array including the structure, and methods of forming the same |
-
2005
- 2005-11-25 CN CNB200510110783XA patent/CN100383994C/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1650444A (en) * | 2002-03-15 | 2005-08-03 | 阿克松技术公司 | Programmable structure, an array including the structure, and methods of forming the same |
| CN1507088A (en) * | 2002-12-13 | 2004-06-23 | ض� | Horizontal phase change memory and producing method thereof |
| EP1473767A2 (en) * | 2003-05-01 | 2004-11-03 | Samsung Electronics Co., Ltd. | Method of forming conductive line for semiconductor device using carbon nanotube and semiconductor device manufactured using the method |
| US20040251551A1 (en) * | 2003-06-11 | 2004-12-16 | Horii Hideki | Phase changeable memory devices including carbon nano tubes and methods for forming the same |
| CN1588613A (en) * | 2004-08-06 | 2005-03-02 | 中国科学院上海微***与信息技术研究所 | Process for preparing nano phase change storage device unit |
| CN1588637A (en) * | 2004-08-06 | 2005-03-02 | 中国科学院上海微***与信息技术研究所 | Process for preparing nano electronic phase change storage |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1801501A (en) | 2006-07-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100461484C (en) | Phase transformation memory storing unit and producing method thereof | |
| CN100530739C (en) | Phase change memory unit with loop phase change material and its making method | |
| WO2012071892A1 (en) | Resistance conversion memory and method for manufacturing the same | |
| CN100383994C (en) | Method for preparing phase-change memory device unit using chalcogenide compound nanometer material | |
| CN102044659B (en) | Electrode including ring catch | |
| US9058985B2 (en) | Method of manufacturing graphene laminated structure, graphene laminated structure, and electronic device including the graphene laminated structure | |
| CN103794723A (en) | Phase change memory unit and method for manufacturing phase change memory unit | |
| CN101794862B (en) | Manufacturing method of vertical phase-change memory | |
| US8394664B2 (en) | Electrical device fabrication from nanotube formations | |
| WO2014040358A1 (en) | Tisin material layer-containing phase-change memory unit and manufacturing method therefor | |
| CN101764195B (en) | Method for making nano-sized phase change memory | |
| CN103594621B (en) | A kind of phase-change memory cell and preparation method thereof | |
| WO2022134211A1 (en) | Phase change memory based on nano-current channel | |
| CN105399061B (en) | A kind of preparation method of one-dimensional tin selenide monocrystal nanowire | |
| CN102544355B (en) | Phase-change storage material and preparation method thereof as well as storage device provided therewith and preparation method thereof | |
| CN100397561C (en) | Process for preparing nano phase change storage device unit | |
| CN101252170B (en) | Full epitaxial electric resistance changing multi-layer films based on silicon substrate, method and application thereof | |
| CN101587905B (en) | Phase change nanometer transistor unit device and manufacturing method thereof | |
| WO2024001426A1 (en) | Phase-change thin film, thin film preparation method, and phase-change memory | |
| CN100461483C (en) | Method for reducing heating electrode area of phase-change memory | |
| CN101789492B (en) | Preparation method of plane phase change memory | |
| KR100945251B1 (en) | Single crystal nano-structures manufacturing method capable of the synthesis of morphology controlled and device thereof | |
| CN102637821A (en) | Phase change memory unit and forming method thereof | |
| CN107359239B (en) | Zinc bismuth tellurium heterogeneous phase change nanowire material and preparation method and application thereof | |
| CN104810475B (en) | A kind of nanometer composite Ti O2‑Sb2Te phase transiting storing thin-film materials and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |