CN100383992C - Light-emitting diode and its manufacturing method - Google Patents
Light-emitting diode and its manufacturing method Download PDFInfo
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- CN100383992C CN100383992C CNB2005101035371A CN200510103537A CN100383992C CN 100383992 C CN100383992 C CN 100383992C CN B2005101035371 A CNB2005101035371 A CN B2005101035371A CN 200510103537 A CN200510103537 A CN 200510103537A CN 100383992 C CN100383992 C CN 100383992C
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- Prior art keywords
- light
- layer
- emitting diode
- electrodes
- protective layer
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- 238000004519 manufacturing process Methods 0.000 title abstract description 18
- 239000010410 layer Substances 0.000 claims abstract description 101
- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 33
- 239000011241 protective layer Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims description 52
- 239000010931 gold Substances 0.000 claims description 27
- 239000010936 titanium Substances 0.000 claims description 17
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 15
- 229910052737 gold Inorganic materials 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- -1 electrodes Substances 0.000 abstract 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 17
- 239000004411 aluminium Substances 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000007788 roughening Methods 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- UDKYUQZDRMRDOR-UHFFFAOYSA-N tungsten Chemical compound [W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W] UDKYUQZDRMRDOR-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- NHDHVHZZCFYRSB-UHFFFAOYSA-N pyriproxyfen Chemical compound C=1C=CC=NC=1OC(C)COC(C=C1)=CC=C1OC1=CC=CC=C1 NHDHVHZZCFYRSB-UHFFFAOYSA-N 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000904 thermoluminescence Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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Abstract
The disclosed light emitting diode includes base plate, semiconductor layer, electrodes, protective layer, multiple metal layers of ball bottom, and light reflecting layer. The semiconductor layer is collocated on base plate. Electrodes and protective layer are configured on the semiconductor layer. The protective layer possesses multiple openings in order to expose electrodes. The metal layers of ball bottom are setup on the electrodes. Being setup on the protective layer, the light-reflecting layer is insulated to electrodes and multiple metal layers electrically. The invention also discloses method for manufacturing the light emitting diode. Being compactable to current manufacturing procedure, the method can produce the ight-reflecting layer and metal layers of ball bottom in one procedure.
Description
Technical field
The invention relates to a kind of light-emitting diode and manufacture method thereof, and particularly relevant for a kind of light-emitting diode and manufacture method thereof of high-luminous-efficiency.
Background technology
(Light Emitting Diode LED) is a kind of semiconductor element to light-emitting diode, and it is made of III-V group element compound semi-conducting material.This semi-conducting material has the characteristic that converts electrical energy into light.In detail, when this semi-conducting material was applied electric current, the electronics of semi-conducting material inside can combine with electric hole, and the energy of surplus is disengaged with the form of light, and reached luminous effect.
Because the luminescence phenomenon of light-emitting diode does not belong to thermoluminescence or Discharge illuminating, but it is luminous to belong to cold property,, and need not warm up the lamp time (idling time) so the life-span of light-emitting diode assembly was more than 100,000 hours.In addition, light-emitting diode assembly has reaction speed and (is about 10 soon
-9Second), volume is little, power-saving, pollute low (not containing mercury), high-reliability, be fit to advantages such as volume production, so the field of its application is very extensive.
Generally speaking, light-emitting diode mainly comprises a substrate, semiconductor multilayer and a plurality of electrode, and wherein multilayered semiconductor is to be piled up in regular turn by P type doped layer, active layers and N type doped layer to form.Multilayered semiconductor is to be disposed in the substrate, and these electrodes then are disposed on this multilayered semiconductor.When forming a potential difference between N type doped layer and the P type doped layer, electronics just can combine in active layers with electric hole, and produces light.
The luminous efficiency of above-mentioned light-emitting diode depends primarily on the quantum efficiency of luminescent layer, and the light of light-emitting diode integral body takes out efficient.Wherein the lifting of the quantum efficiency of luminescent layer depends primarily on the very corrupt of the crystalline quality of luminescent layer and structure thereof, and the effective rate of utilization of the light that luminescent layer sends is then depended in the lifting that light takes out efficient.
The light that be to promote light-emitting diode takes out efficient, and existing known techniques proposes a kind of technology of the surface roughening with light-emitting diode.This technology mainly is in the back-end process of light-emitting diode, with the surface roughening of light-emitting diode, in light-emitting diode inside total reflection takes place to avoid light, and has reduced the effective rate of utilization of light.Because this Technology Need increases extra roughening processing procedure in the manufacture process of light-emitting diode, therefore, this Technology Need expends higher cost and long production time-histories.
In addition, existing known techniques more can form the layer of metal reflectance coating between multilayered semiconductor and protective layer, takes out efficient with the light that improves light-emitting diode.Yet the method still needs to increase extraly the processing procedure of metallic reflective coating, so technology still has the problem on the cost of manufacture.
Summary of the invention
Purpose of the present invention is providing a kind of light-emitting diode exactly, and it has higher luminous efficiency.
A further object of the present invention provides a kind of light-emitting diode processing procedure, and it has lower production cost and short production time-histories.
The present invention proposes a kind of light-emitting diode, and it comprises substrate, multilayered semiconductor, a plurality of electrode, protective layer, a plurality of ball substrate layer and reflection layer.Multilayered semiconductor is to be disposed on the substrate.These electrodes and protective layer are to be disposed on the multilayered semiconductor, and wherein protective layer has a plurality of openings, to expose these electrodes.Ball substrate layer is disposed on these electrodes.Reflection layer is disposed on the protective layer, and wherein reflection layer and these electrodes, ball substrate layer are electrically insulated.
In one embodiment of this invention, light-emitting diode can further comprise a plurality of projections, and it is disposed on the ball substrate layer.For example the material with reflection layer is identical for the material of above-mentioned ball substrate layer.Particularly, the material of ball substrate layer and reflection layer for example is gold, silver, titanium/tungsten or other materials similar.
The present invention more proposes a kind of light-emitting diode processing procedure, and its step comprises provides LED wafer earlier, and wherein LED wafer has a plurality of electrodes and a protective layer, and wherein protective layer has a plurality of openings to expose these electrodes.On protective layer, form a conductive layer then.With conductive layer patternization, to form a plurality of ball substrate layers and a reflection layer, wherein these ball substrate layers are positioned on these electrodes afterwards, and these electrodes and these ball substrate layers all are electrically insulated with reflection layer.
In one embodiment of this invention, the formation method of above-mentioned conductive layer for example comprises sputter.
In one embodiment of this invention, the light-emitting diode processing procedure can further more comprise a lug manufacturing process, with respectively at forming a projection on each ball substrate layer.In addition, the formation method of above-mentioned projection for example comprises plating or printing.
The present invention disposes reflection layer on protective layer, so that the rough outgoing in the same direction of the light that light-emitting diode sent, therefore, the disclosed light-emitting diode of the present invention has higher light and takes out efficient.In addition, the present invention is in patterning process, forms reflection layer and ball substrate layer simultaneously, thus the present invention can with existing process-compatible, and can not increase manufacturing cost.In addition, the disclosed processing procedure of the present invention can be made bright dipping with cheaper cost and short production time-histories and take out the higher light-emitting diode of efficient.
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
Description of drawings
Figure 1A～Figure 1B illustrates the light-emitting diode processing procedure schematic diagram into the embodiment of the invention.
Fig. 2 A～Fig. 2 B illustrates to looking schematic diagram on the conductive layer behind the patterning.
Fig. 3 illustrates the combination schematic diagram into light-emitting diode and bearing substrate.
100: LED wafer 110: substrate
120: multilayered semiconductor 130,132: electrode
140: protective layer 142: opening
150: conductive layer 160: ball substrate layer
170: reflection layer 180: projection
200: light-emitting diode 210: bearing substrate
Embodiment
See also Figure 1A, Figure 1A～Figure 1B illustrates the light-emitting diode processing procedure schematic diagram into the embodiment of the invention.LED wafer 100 is provided at first earlier.This LED wafer 100 comprises substrate 110, multilayered semiconductor 120, a plurality of electrode 130,132 and protective layer 140.Wherein the material of substrate 110 for example is alumina single crystal (Sapphire) or other the transparent material of C-Plane, R-Plane or A-Plane.In addition, the lattice constant single crystal compound that approaches nitride-based semiconductor also is suitable for the material as substrate 110.
After LED wafer 100 is provided, on LED wafer 100, form one deck conductive layer 150, wherein the generation type of conductive layer 150 for example is a sputter (sputtering), and the material of conductive layer 150 for example is gold (Au), silver (Ag) or titanium/tungsten (Ti/W).
See also Figure 1B, after forming conductive layer 150, for example utilize little shadow/etch process with conductive layer 150 patternings, to form a plurality of ball substrate layers 160 and reflection layer 170 simultaneously, and then tentatively form light-emitting diode 200, wherein reflection layer 170 all is electrically insulated with electrode 130,132 and these ball substrate layers 160.
From the above, owing to ball substrate layer 160 and reflection layer 170 are to get via conductive layer 150 is carried out little shadow/etch process, therefore the shape and the allocation position of ball substrate layer 160 and reflection layer 170 can flexibly be looked electrode 130 and 132 and adjust with respect to the position of multilayered semiconductor 120.See also Fig. 2 A and Fig. 2 B, its be behind the patterning conductive layer 150 on look schematic diagram.For example, in Fig. 2 A, when electrode 130 and 132 was positioned at the relative dual-side of multilayered semiconductor 120, ball substrate layer 160 was that to be positioned at be to lay respectively on electrode 130 and 132, and reflection layer 170 then is to be positioned at the zone beyond the ball substrate layer 160 on the LED wafer 100.When electrode 130 and 132, shown in Fig. 2 B, when being positioned at relative two corners of multilayered semiconductor 120, ball substrate layer 160 still lays respectively on electrode 130 and 132, but reflection layer 170 just can be with respect to the variation of the shape of ball substrate layer 160 and allocation position and flexibly changed its profile.
Please refer again to Figure 1B, after conductive layer 150 patternings being formed ball substrate layer 160 and reflection layer 170, more can on each ball substrate layer 160, form projection 180, the mode that wherein forms projection 180 for example is plating, screen printing or other modes, and the material of projection 180 for example is gold or scolding tin.
Based on above-mentioned, the disclosed light-emitting diode 200 of the present invention mainly comprises substrate 110, multilayered semiconductor 120, electrode 130 and 132, protective layer 140, a plurality of ball substrate layer 160 and reflection layer 170.Wherein multilayered semiconductor 120 is to be disposed on the substrate 110, and electrode 130 and 132 is disposed on the multilayered semiconductor 120.Protective layer 140 also is disposed on the multilayered semiconductor 120, and protective layer 140 has a plurality of openings 142 to expose these electrodes 130 and 132 respectively.Ball substrate layer 160 is to be disposed on electrode 130 and 132, and reflection layer 170 then is disposed on the protective layer 140.It should be noted that reflection layer 170 and electrode 130,132, ball substrate layer 160 are electrically insulated.
If when being electrically connected at bearing substrate 210 on via projection 180 light-emitting diode 200, its schematic diagram is shown in 3.See also Fig. 3, when a potential difference is formed between electrode 130 and 132, electronics will combine in multilayered semiconductor 120 with electric hole and discharge light.Because the disclosed light-emitting diode of present embodiment has the design of reflection layer 170 on multilayered semiconductor 120, therefore can reflect towards the light that bearing substrate 210 is advanced.Be the light outgoing approximately in the same direction of being sent, and then make light-emitting diode 200 have higher light taking-up efficient with light-emitting diode 200.
Based on above-mentioned, disclosed light-emitting diode of the present invention and manufacture method thereof have following advantage:
1. the present invention is disposed at reflection layer on the protective layer, so the rough outgoing in the same direction of the light that light-emitting diode sent, and is to have higher light with the disclosed light-emitting diode of the present invention to take out efficient.
2. the present invention is in patterning process, forms reflection layer and ball substrate layer simultaneously, thus the present invention can with existing process-compatible, and can not increase manufacturing cost.In addition, the disclosed processing procedure of the present invention can be made bright dipping with cheaper cost and short production time-histories and take out the higher light-emitting diode of efficient.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limiting the present invention, anyly has the knack of this skill person, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking the claim person of defining.
Claims (8)
1. a light-emitting diode is characterized in that it comprises
One substrate;
The semiconductor multilayer is disposed on this substrate;
A plurality of electrodes are disposed on this multilayered semiconductor;
One protective layer is disposed on this multilayered semiconductor, and wherein this protective layer has a plurality of openings, with those electrodes exposed;
A plurality of ball substrate layers are disposed on those electrodes; And
One reflection layer is disposed on this protective layer, and wherein this reflection layer and those electrodes, those ball substrate layers are electrically insulated.
2. light-emitting diode according to claim 1 is characterized in that it more comprises a plurality of projections, is disposed on those ball substrate layers.
3. light-emitting diode according to claim 2 is characterized in that the material of wherein said ball substrate layer is identical with the material of this reflection layer.
4. light-emitting diode according to claim 3, the material that it is characterized in that wherein said ball substrate layer and this reflection layer is gold, silver or titanium/tungsten.
5. light-emitting diode processing procedure is characterized in that its step comprises:
One LED wafer is provided, and wherein this LED wafer has a plurality of electrodes and a protective layer, and this protective layer has a plurality of openings with those electrodes exposed;
On this protective layer, form a conductive layer; And
With this conductive layer patternization, to form a plurality of ball substrate layers and a reflection layer, wherein those ball substrate layers are positioned on those electrodes, and those electrodes and those ball substrate layers all are electrically insulated with this reflection layer.
6. light-emitting diode processing procedure according to claim 5 is characterized in that the formation method of wherein said conductive layer comprises sputter.
7. light-emitting diode processing procedure according to claim 5 is characterized in that it more comprises respectively at forming a projection on each those ball substrate layer.
8. light-emitting diode processing procedure according to claim 7 is characterized in that the formation method of wherein said projection comprises plating or printing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101035371A CN100383992C (en) | 2005-09-21 | 2005-09-21 | Light-emitting diode and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101035371A CN100383992C (en) | 2005-09-21 | 2005-09-21 | Light-emitting diode and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1937266A CN1937266A (en) | 2007-03-28 |
| CN100383992C true CN100383992C (en) | 2008-04-23 |
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| CNB2005101035371A Expired - Fee Related CN100383992C (en) | 2005-09-21 | 2005-09-21 | Light-emitting diode and its manufacturing method |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101494258B (en) * | 2008-01-24 | 2011-04-20 | 晶元光电股份有限公司 | Light-emitting element, backlight module apparatus and lighting device |
| US8431950B2 (en) | 2008-05-23 | 2013-04-30 | Chia-Lun Tsai | Light emitting device package structure and fabricating method thereof |
| CN102208520B (en) * | 2011-05-26 | 2013-02-13 | 东莞洲磊电子有限公司 | Light emitting diode (LED) wafer anode pad and manufacturing process thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000036619A (en) * | 1998-05-13 | 2000-02-02 | Toyoda Gosei Co Ltd | Iii nitride compound semiconductor light emitting element |
| US20030052328A1 (en) * | 2001-09-18 | 2003-03-20 | Toshiya Uemura | Group III nitride compound semiconductor light-emitting element |
| JP2003224297A (en) * | 2002-01-30 | 2003-08-08 | Nichia Chem Ind Ltd | Light emitting element |
| CN1527408A (en) * | 2003-03-03 | 2004-09-08 | 诠兴开发科技股份有限公司 | Bare crystal LED |
-
2005
- 2005-09-21 CN CNB2005101035371A patent/CN100383992C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000036619A (en) * | 1998-05-13 | 2000-02-02 | Toyoda Gosei Co Ltd | Iii nitride compound semiconductor light emitting element |
| US20030052328A1 (en) * | 2001-09-18 | 2003-03-20 | Toshiya Uemura | Group III nitride compound semiconductor light-emitting element |
| JP2003224297A (en) * | 2002-01-30 | 2003-08-08 | Nichia Chem Ind Ltd | Light emitting element |
| CN1527408A (en) * | 2003-03-03 | 2004-09-08 | 诠兴开发科技股份有限公司 | Bare crystal LED |
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| Publication number | Publication date |
|---|---|
| CN1937266A (en) | 2007-03-28 |
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