CN100380697C - 第ⅲ族氮化物发光器件 - Google Patents
第ⅲ族氮化物发光器件 Download PDFInfo
- Publication number
- CN100380697C CN100380697C CNB200510097496XA CN200510097496A CN100380697C CN 100380697 C CN100380697 C CN 100380697C CN B200510097496X A CNB200510097496X A CN B200510097496XA CN 200510097496 A CN200510097496 A CN 200510097496A CN 100380697 C CN100380697 C CN 100380697C
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- China
- Prior art keywords
- layer
- luminescent device
- iii
- family nitride
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 150000004767 nitrides Chemical class 0.000 claims description 26
- 239000011248 coating agent Substances 0.000 claims description 24
- 238000000576 coating method Methods 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 16
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 11
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050026737 | 2005-03-30 | ||
KR1020050026737A KR100631976B1 (ko) | 2005-03-30 | 2005-03-30 | 3족 질화물 발광 소자 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1841796A CN1841796A (zh) | 2006-10-04 |
CN100380697C true CN100380697C (zh) | 2008-04-09 |
Family
ID=37030702
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200510097496XA Expired - Fee Related CN100380697C (zh) | 2005-03-30 | 2005-12-28 | 第ⅲ族氮化物发光器件 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7235820B2 (zh) |
JP (1) | JP4875361B2 (zh) |
KR (1) | KR100631976B1 (zh) |
CN (1) | CN100380697C (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100638813B1 (ko) * | 2005-04-15 | 2006-10-27 | 삼성전기주식회사 | 플립칩형 질화물 반도체 발광소자 |
US20070181905A1 (en) * | 2006-02-07 | 2007-08-09 | Hui-Heng Wang | Light emitting diode having enhanced side emitting capability |
KR100853851B1 (ko) * | 2006-10-30 | 2008-08-22 | 삼성전기주식회사 | 질화물 반도체 발광소자 |
DE102007019079A1 (de) * | 2007-01-26 | 2008-07-31 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
US7985979B2 (en) | 2007-12-19 | 2011-07-26 | Koninklijke Philips Electronics, N.V. | Semiconductor light emitting device with light extraction structures |
KR101457204B1 (ko) * | 2008-02-01 | 2014-11-03 | 서울바이오시스 주식회사 | 발광 다이오드 및 그 제조방법 |
KR100999800B1 (ko) | 2010-02-04 | 2010-12-08 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 그 제조방법 |
RU2550771C2 (ru) * | 2010-05-31 | 2015-05-10 | Нития Корпорейшн | Светоизлучающее устройство и способ изготовления светоизлучающего устройства |
KR101025565B1 (ko) * | 2010-08-12 | 2011-03-28 | (주)더리즈 | 발광 소자 |
CN102157639A (zh) * | 2011-03-01 | 2011-08-17 | 湘能华磊光电股份有限公司 | 一种led芯片及其制备方法 |
JP5541260B2 (ja) * | 2011-03-21 | 2014-07-09 | 豊田合成株式会社 | Iii族窒化物半導体発光素子 |
WO2012159615A2 (de) * | 2011-05-25 | 2012-11-29 | Osram Opto Semiconductors Gmbh | Optoelektronischer halbleiterchip |
KR102005236B1 (ko) | 2012-07-05 | 2019-07-31 | 삼성전자주식회사 | 반사 전극 형성을 위한 콘택층을 포함하는 반도체 발광 소자 |
CN111689531B (zh) * | 2020-06-03 | 2021-05-25 | 中国科学院物理研究所 | 低热导金属性材料及其制备方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1296296A (zh) * | 2000-09-29 | 2001-05-23 | 北京大学 | 一种制备氮化镓基 led的新方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5310556B2 (zh) * | 1973-02-01 | 1978-04-14 | ||
JP3850978B2 (ja) * | 1998-03-31 | 2006-11-29 | 独立行政法人科学技術振興機構 | 導電性透明酸化物 |
JP4296644B2 (ja) * | 1999-01-29 | 2009-07-15 | 豊田合成株式会社 | 発光ダイオード |
JP3724267B2 (ja) * | 1999-08-11 | 2005-12-07 | 昭和電工株式会社 | Iii族窒化物半導体発光素子 |
JP4024994B2 (ja) * | 2000-06-30 | 2007-12-19 | 株式会社東芝 | 半導体発光素子 |
JP2003110142A (ja) * | 2001-09-28 | 2003-04-11 | Sharp Corp | 酸化物半導体発光素子およびその製造方法 |
US8969883B2 (en) * | 2002-11-16 | 2015-03-03 | Lg Innotek Co., Ltd. | Semiconductor light device and fabrication method thereof |
JP2004179347A (ja) | 2002-11-26 | 2004-06-24 | Matsushita Electric Works Ltd | 半導体発光素子 |
JP4263121B2 (ja) * | 2003-03-27 | 2009-05-13 | 三洋電機株式会社 | 発光素子および照明装置 |
JP4889193B2 (ja) | 2003-07-23 | 2012-03-07 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
KR100580634B1 (ko) * | 2003-12-24 | 2006-05-16 | 삼성전자주식회사 | 질화물계 발광소자 및 그 제조방법 |
-
2005
- 2005-03-30 KR KR1020050026737A patent/KR100631976B1/ko not_active IP Right Cessation
- 2005-12-23 US US11/315,150 patent/US7235820B2/en not_active Expired - Fee Related
- 2005-12-27 JP JP2005375759A patent/JP4875361B2/ja not_active Expired - Fee Related
- 2005-12-28 CN CNB200510097496XA patent/CN100380697C/zh not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1296296A (zh) * | 2000-09-29 | 2001-05-23 | 北京大学 | 一种制备氮化镓基 led的新方法 |
Also Published As
Publication number | Publication date |
---|---|
US20060220057A1 (en) | 2006-10-05 |
US7235820B2 (en) | 2007-06-26 |
KR100631976B1 (ko) | 2006-10-11 |
JP2006287189A (ja) | 2006-10-19 |
CN1841796A (zh) | 2006-10-04 |
JP4875361B2 (ja) | 2012-02-15 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG LED CO., LTD. Free format text: FORMER OWNER: SAMSUNG ELECTRO-MECHANICS CO., LTD. Effective date: 20100920 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Free format text: CORRECT: ADDRESS; FROM: GYEONGGI, SOUTH KOREA TO: SUWON CITY, GYEONGGI, SOUTH KOREA |
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TR01 | Transfer of patent right |
Effective date of registration: 20100920 Address after: Gyeonggi Do Korea Suwon Patentee after: Samsung LED Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung Electro-Mechanics Co., Ltd. |
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ASS | Succession or assignment of patent right |
Owner name: SAMSUNG ELECTRONICS CO., LTD. Free format text: FORMER OWNER: SAMSUNG LED CO., LTD. Effective date: 20121211 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20121211 Address after: Gyeonggi Do, South Korea Patentee after: Samsung Electronics Co., Ltd. Address before: Gyeonggi Do Korea Suwon Patentee before: Samsung LED Co., Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080409 Termination date: 20141228 |
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EXPY | Termination of patent right or utility model |