CN100369217C - Method for eliminating graphics effect in furnace tube operation - Google Patents
Method for eliminating graphics effect in furnace tube operation Download PDFInfo
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- CN100369217C CN100369217C CNB2004100930308A CN200410093030A CN100369217C CN 100369217 C CN100369217 C CN 100369217C CN B2004100930308 A CNB2004100930308 A CN B2004100930308A CN 200410093030 A CN200410093030 A CN 200410093030A CN 100369217 C CN100369217 C CN 100369217C
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Abstract
The present invention discloses a method for eliminating a figure effect in furnace tube operation. The filling mode for a small boat by a silicon wafer of an alpha-8s type furnace tube is changed. The present invention is characterized in that 1, in an on-line system, batch grouping is started from a process gas inlet end of the small boat, which ensures that when filled into the small boat, products are filled from the process gas inlet end of the small boat; 2, the products in each batch are insufficient, fake pieces are not filled at a relative position of the small boat, and the products are continuously arranged on the small boat; 3, the fake piece filling mode is changed from the process gas inlet end into the filling mode in an opposite direction, which enables the fake pieces which are about to be filled into the relative position of the small boat to be concentratively arranged in the opposite direction of the process gas inlet end of the small boat. The influence on high-density figure products because of the figure effect can be effectively eliminated by the present invention, and the method for eliminating a figure effect in furnace tube operation is suitable for the fabrication of semiconductor components.
Description
Technical field
The present invention relates to a kind of semiconductor chip fabrication process method, particularly relate to a kind of method of in furnace tube operation, eliminating graphics effect on the product sheet.
Background technology
In the low-pressure chemical vapor phase deposition technology of furnace-tube type, (TEOS is a kind of abbreviation in the industry of chemicals, and Chinese is: tetraethyl orthosilicate salt, English is: TetraethylOrthosilicate for silicon nitride, TEOS at present.Chemical molecular formula is: Si (OC
2H
5)
4Usually the technology that will use TEOS to carry out the silicon dioxide that generates after the thermal decomposition in the low-pressure chemical vapor phase deposition technology of semicon industry is called TEOS technology.) etc. technology belong to gas concentration decision type reaction (being to influence in these technologies in each phase factor of reaction rate, the weight maximum of gas concentration).And the reaction of low-pressure chemical vapor phase deposition technology is hot wall reaction, because the pattern density height (as: static memory, the product of dynamic memory class) of some products, with common false sheet (no pattern piece) difference of huge surface area is arranged.Gas consumption exists huge difference on pattern piece and the non-pattern piece when the boiler tube internal reaction.
α-8S type the boiler tube of TEL's production, reacting gas are by the bottom feeding of boiler tube, flow from bottom to top, carry out the hot wall reaction simultaneously on silicon chip surface on the bateau and tube wall, final top discharge (as shown in Figure 1) by boiler tube.When handling higher some products of some silicon chip surface pattern densities, be that below by boiler tube enters because the gas of reaction is provided.After having passed through many higher product sheets of surfacial pattern density, the concentration that has arrived its gas of top of boiler tube is compared with the bottom very big difference.The difference of thickness on the product that causes in order to remedy the difference on this gas concentration, usually just need form bigger temperature difference in the upper and lower of boiler tube, by the influence of temperature, make the top of boiler tube and the reaction rate of following stove keep basically identical to its reaction rate.Guarantee the unanimity of the thickness between the upper-lower position product in the stove at last.
But inserting planless false sheet and when inserting the product sheet of high pattern density on the bateau in boiler tube, because the difference (as shown in Figure 2) of its surface area, and the reaction of gas in stove is the hot wall reaction, causes both to have greatest differences by used up gas flow.Thereby make the gas concentration on the false sheet of arrival filling top and the gas concentration on product sheet top that bigger difference be arranged.Finally make the thickness on its top silicon chip produce bigger difference.In the production of reality, in the time of can not guaranteeing the processing of each stove, be the pattern piece that needs processing fully on the bateau.Because in the operation of boiler tube, every stove can be handled several batches product.But in the production since products in circulation speed and kind different can not guarantee all to have criticizing of abundance to handle at every turn, nor can guarantee that the silicon chip in each batch all is sufficient.So, usually when running into the high product of surfacial pattern density, begin to place, and when silicon chip is not enough in running into batch the last consignment of during the goods that just this batch can only be placed on this stove are criticized with regard to should be noted that product criticized from the bottom of bateau.And run into the silicon chip that has in two or more batches when not enough, just the processing of these batches branch stove must be greatly reduced the disposal ability of these furnace tube apparatus.And the silicon chip in running into batch is when having the many places deficiency (this often runs in some different level segmentation evaluations), because the temperature difference in the stove has been carried out revisal according to the product sheet of inserting high density graph fully, just certainly will make above filling vacation sheet product be subjected to the influence of graphics effect.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of method of eliminating graphics effect on the product sheet in furnace tube operation, effectively eliminates owing to the influence of graphics effect to the high density graph product.
For solving the problems of the technologies described above, the method of eliminating graphics effect on the product sheet in furnace tube operation of the present invention is, the silicon chip of the α-8S type boiler tube filling model to bateau is changed, 1, in on-line system, sets from the process gas inlet end of bateau and begin group batch product sheet, guarantee product when being filled into bateau, begin the filling product sheet from the process gas inlet end of bateau; When 2, the product in each batch is not enough, do not insert the false sheet of filling, but allow continuous being placed on the bateau of product sheet in the product sheet position of bateau; 3, the filling model with the false sheet of filling changes its filling in the other direction into by the filling of process gas inlet end, makes the false sheet of the filling that will insert bateau product sheet position originally concentrate the opposite direction of the process gas inlet end that is placed on bateau.
After adopting method of the present invention, highdensity product sheet is concentrated the below that has been placed on bateau, and the false sheet of filling is placed on these product sheets.Then, the temperature difference in the stove is carried out revisal according to the product sheet of inserting high density graph fully, when silicon chip is not enough in the product of high density graph is criticized, just can not be subjected to below product sheet since pattern density far below the influence of the false sheet of filling of product sheet.And, by this method, when running into the high density product sheet of product sheet deficiency in a plurality of batches, just can in same stove, handle.Do not handle and do not need to carry out the branch stove, improved the disposal ability of body of heater device in this case greatly.
Description of drawings
Fig. 1 is the schematic diagram that furnace gas flow graph and graphics effect form;
The schematic diagram of the false sheet surface appearance of Fig. 2 product sheet and filling;
Fig. 3 is a silicon chip distribution situation schematic diagram on the prior art bateau;
Fig. 4 adopts silicon chip distribution situation schematic diagram on the method bateau of the present invention.
Embodiment
When silicon chip is inadequate in the high density graph product is criticized, graphics effect is for the influence of product, the method of eliminating graphics effect in furnace tube operation of the present invention, the silicon chip of α-8S type boiler tube that TEL is produced changes the filling model of bateau.1, in on-line system, sets from the process gas inlet end of bateau and begin group batch product sheet, guarantee product when being filled into bateau, begin the filling product sheet from the process gas inlet end of bateau; When 2, the product in each batch is not enough, do not insert the false sheet of filling, but allow continuous being placed on the bateau of product sheet in the product sheet position of bateau; 3, the filling model with the false sheet of filling changes its filling in the other direction into by the filling of process gas inlet end, makes the false sheet of the filling that will insert bateau product sheet position originally concentrate the opposite direction of the process gas inlet end that is placed on bateau.The distribution situation of all kinds of silicon chips on the concrete bateau of back before changing can be in conjunction with referring to Fig. 3 and Fig. 4.
Adopt method of the present invention, by change to the conveyance pattern, when the α-8S type boiler tube that uses TEL to produce is handled the product sheet of high pattern density in gas concentration decision type reaction process, make and eliminated fully on the product sheet, guaranteed the rate of finished products of final product because the film thickness value on the product that graphics effect causes surpasses the situation of target film thickness specification.And when running into the high density product sheet of product sheet deficiency in a plurality of batches, just can in same stove, handle, do not handle and do not need to carry out the branch stove, improved in this case the disposal ability of body of heater device greatly.And do not need each basis batch interior product situation of counting to criticize the assignment and the batch processing of position in stove, alleviated operating personnel's workload greatly.
With the 128M static memory is example:
In the side wall technology of making grid of nitride film, when putting into the false sheet of 25 pieces of planless fillings below product sheet, the nitride film thickness on this piece product is 652 (desired value is 600 ± 50 ).And when putting into identical product sheet below product sheet, the nitride film thickness on this piece product is 602 (desired value is 600 ± 50 ).
In the side wall technology of making contact hole of nitride film, when putting into the false sheet of 25 pieces of planless fillings below product sheet, the nitride film thickness on this piece product is 325 (desired value is 300 ± 20 ).And when putting into identical product sheet below product sheet, the nitride film thickness on this piece product is 298 (desired value is 300 ± 20 ).
Claims (1)
1. method of in furnace tube operation, eliminating graphics effect on the product sheet, it is characterized in that: the silicon chip of the α-8S type boiler tube filling model to bateau is changed, 1, in on-line system, sets from the process gas inlet end of bateau and begin group batch product sheet, guarantee product when being filled into bateau, begin the filling product sheet from the process gas inlet end of bateau; When 2, the product in each batch is not enough, do not insert the false sheet of filling, but allow continuous being placed on the bateau of product sheet in the product sheet position of bateau; 3, the filling model with the false sheet of filling changes its filling in the other direction into by the filling of process gas inlet end, makes the false sheet of the filling that will insert bateau product sheet position originally concentrate the opposite direction of the process gas inlet end that is placed on bateau.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100930308A CN100369217C (en) | 2004-12-15 | 2004-12-15 | Method for eliminating graphics effect in furnace tube operation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100930308A CN100369217C (en) | 2004-12-15 | 2004-12-15 | Method for eliminating graphics effect in furnace tube operation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1790631A CN1790631A (en) | 2006-06-21 |
| CN100369217C true CN100369217C (en) | 2008-02-13 |
Family
ID=36788354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100930308A Expired - Fee Related CN100369217C (en) | 2004-12-15 | 2004-12-15 | Method for eliminating graphics effect in furnace tube operation |
Country Status (1)
| Country | Link |
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| CN (1) | CN100369217C (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85102326A (en) * | 1984-04-17 | 1987-01-17 | 菲利浦光灯制造公司 | Method and equipment thereof with the material semiconductor device of reacting gas deposit |
| US6053983A (en) * | 1997-05-08 | 2000-04-25 | Tokyo Electron, Ltd. | Wafer for carrying semiconductor wafers and method detecting wafers on carrier |
| US6303939B1 (en) * | 1999-04-13 | 2001-10-16 | United Microelectronics, Corp. | Wafer mapping apparatus |
| US6396072B1 (en) * | 1999-06-21 | 2002-05-28 | Fortrend Engineering Corporation | Load port door assembly with integrated wafer mapper |
| CN1428824A (en) * | 2001-12-28 | 2003-07-09 | 旺宏电子股份有限公司 | Thermal-oxidative production process of semiconductor wafer |
-
2004
- 2004-12-15 CN CNB2004100930308A patent/CN100369217C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85102326A (en) * | 1984-04-17 | 1987-01-17 | 菲利浦光灯制造公司 | Method and equipment thereof with the material semiconductor device of reacting gas deposit |
| US6053983A (en) * | 1997-05-08 | 2000-04-25 | Tokyo Electron, Ltd. | Wafer for carrying semiconductor wafers and method detecting wafers on carrier |
| US6303939B1 (en) * | 1999-04-13 | 2001-10-16 | United Microelectronics, Corp. | Wafer mapping apparatus |
| US6396072B1 (en) * | 1999-06-21 | 2002-05-28 | Fortrend Engineering Corporation | Load port door assembly with integrated wafer mapper |
| CN1428824A (en) * | 2001-12-28 | 2003-07-09 | 旺宏电子股份有限公司 | Thermal-oxidative production process of semiconductor wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1790631A (en) | 2006-06-21 |
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Effective date of registration: 20171215 Address after: Zuchongzhi road 201203 Shanghai Pudong New Area Zhangjiang High Tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corp. Address before: No. 1188, Chuan Qiao Road, Pudong, Shanghai Patentee before: Shanghai Hua Hong NEC Electronics Co.,Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080213 Termination date: 20211215 |
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| CF01 | Termination of patent right due to non-payment of annual fee |