CN100368099C - Method for preparing film of elimination of reflection for PDP protection screen - Google Patents
Method for preparing film of elimination of reflection for PDP protection screen Download PDFInfo
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- CN100368099C CN100368099C CNB2005100205464A CN200510020546A CN100368099C CN 100368099 C CN100368099 C CN 100368099C CN B2005100205464 A CNB2005100205464 A CN B2005100205464A CN 200510020546 A CN200510020546 A CN 200510020546A CN 100368099 C CN100368099 C CN 100368099C
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- elimination
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Abstract
The present invention provides a method for preparing a film of elimination of reflection for a PDP protection screen, which has the concrete steps that: 1. electrostatic processing: the processing of electrostatic discharge is carried out to a PET surface; 2. doping batching: nanometer particle materials which are processed by a nanometer particle dispersal technique and have high refractivity and low refractivity are respectively doping adulterated to temperature-resistance transparence resin, and nanometer particle transparence resin with high and low refractivity is prepared; 3. dipping and coating: the prepared nanometer particle transparence resin with high and low refractivity is respectively alternately laminated and dipped on the surface of the electrostatic processed PET thin film to form a uniform and compact thin film; 4. drying: the film is heated and dried in the environment of 60 DEG C to 80 DEG C. Because the coating material of the present invention is firstly processed through nanotechnology, the thin film is compact and uniform, and the particles of nano level are disperse. The film adhesion is strong, the level haze is low, and the contrast ratio is high.
Description
Technical field
The present invention relates to a kind of preparation method of elimination high light reflectivity film of PDP protection screen.
Background technology
Plasm TV (PDP) is the large-screen high-resolution FPD TV behind rear-projection, LCD TV, have visual effects such as clear picture, brightness height, angle be big, also having advantages such as in light weight, thin thickness simultaneously, is the best candidate of following real high-definition large-screen FPD TV.But, because there is following problem in plasma display: very high light reflection is arranged, the orange-colored light of the 590nm that Ne gas sends can reduce excitation, and the glass that discharges interference of harmful electromagnetic interference and near-infrared and plasma display can not bear too big pressure as thin as a wafer.Therefore; use protection screen to overcome above-mentioned defective in the place ahead of plasma display at present; as US6150754, JP13-134198 and JP11-74683; the protection screen structure of its description mainly contains two kinds: first kind is to replace laminated metal layer and high refractive index oxide layer in a top-cross of half tempered glass baseplate; to form the EMI/NIR screen layer; and at the opposite side formation AR of glass baseplate elimination high light reflectivity layer, its structure is: AR/ half tempered glass/NIR/EMI.Second kind is to place conductive grid to form the EMI layer between two-layer PET (polyester film), at the side adhesion AR of half tempered glass or lucite base material film, adheres to the NIR layer at opposite opposite side.Its structure is: ARPET/ adhesion coating/half tempered glass or lucite/adhesion coating/NIRPET/Ne_cut/ adhesion coating/EMIPET.
But owing to reasons such as self structure and manufacturing process, there is following defective in the elimination high light reflectivity film (AR) of the protection screen of above-mentioned two kinds of structures: film is not fine and close, inhomogeneous, film adhesion is not strong, mist degree is high and contrast is low.
Summary of the invention
Technical problem to be solved by this invention provides a kind of preparation method of elimination high light reflectivity film of PDP protection screen, has contrast height, advantage that mist degree is low.
The technical scheme that technical solution problem of the present invention is adopted is: the preparation method who eliminates the high light reflectivity film is: 1) Electrostatic Treatment: the pet sheet face is carried out static discharge processing; 2) doping batching: will adopt the nanometer particle material after the nano particle dispersion technology is handled, and be doped to respectively in the transparent resin, and be mixed with nano particle transparent resin with high and low refractive index with high index of refraction and low-refraction; 3) dipping, coating: with the deployed nano particle transparent resin with high and low refractive index, on the PET film surface after the above-mentioned Electrostatic Treatment, even, fine and close film is made in alternately laminated dipping, coating respectively; 4) oven dry: in 60 ℃～80 ℃ environment, heating, drying.
The invention has the beneficial effects as follows: because the coating material of the elimination high light reflectivity film of protection screen of the present invention at first will pass through nanotechnology treatments, so film densification, even, accomplish that really nanometer particle disperses, film adhesion is strong, and mist degree is low, the contrast height.
Description of drawings:
Fig. 1 is the structural representation of PDP protection screen.
The specific embodiment
The basic structure of PDP protection screen as shown in Figure 1, it is arranged in order and is AR, PET, adhesive linkage, NIR, Ne_cut, substrate, black surround silk-screen layer, adhesive linkage, PET, EMI Mesh Film and copper-foil conducting electricity or nickel foil.Wherein: AR eliminates high light reflectivity, keeps the cleannes of screen, and PET prevents that substrate is subjected to the accidental pressure fragmentation, increases the intensity of protection screen, and AR and PET form elimination high light reflectivity film (ARPET); 590nm orange-colored light absorbed layer (Ne_cut) is the orange-colored light that absorption of N e gas sends, keep excitation pure, NIR covers 780nm～1100nm near infrared ray that the red, green, blue three-color phosphor is sent, the elimination near-infrared disturbs, substrate is the protection panel, avoid being subjected to accidental pressure to impact, NIR, Ne_cut and substrate are formed the substrate of absorption near infrared ray and 590nm orange-colored light; Black surround silk-screen layer is the contrast that increases light; EMI Mesh Film is the shielding electromagenetic wave radiation, eliminates the radiation injury to the people, avoids having an effect with other electronic equipment, and PET and EMI Mesh Film form electromagnetic shielding film (EMI Mesh Film/PET); Copper-foil conducting electricity or nickel foil have been the ground connection effects; Adhesive linkage is functional membranes such as bonding ARPET, EMI Mesh Film/PET, adopts PSA transparent adhesive tapes such as (pressure sensitive adhesives) usually.Said structure is respectively to adopt: nano particle disperses dipping, coating technology to prepare ARPET; The alternately laminated technology of vacuum sputtering prepares the substrate of NIR and Ne_cut; Spatter film forming and etching grid film preparation EMI Mesh Film/PET; The roll extrusion film coating technique is made protection screen.Below its preparation method will be described respectively.
One, eliminate high light reflectivity film (ARPET):
According to " n
Highd
1=n
Lowd
2=n
Highd
1=n
Lowd
2=λ/4 (or 3 λ/4, λ/8) " the anti-reflective optical film preparation principle; the present invention adopts high-index material and low-index material earlier after " nano intercalated arching pushing or the nanometer vibromill dispersion method of dividing " handled in " nano particle dispersion technology "; the batching of mixing; be mixed with the nano particle transparent resin with high and low refractive index; on the PET film; alternately laminated dipping, coating high refractive index resins and low refractive index resin, prepares densification, ARPET film uniformly.
Above-mentioned high-index material can adopt: magnesium fluoride (MgF
2), zinc oxide (ZnO), titanium dioxide (TiO
2), titanium nitride (TiN), indium sesquioxide (In
2O
3), tin ash (SnO
2), chrome green (Cr
2O
3), zirconium dioxide (ZrO
2), tantalum pentoxide (Ta
2O
5), lanthanum hexaboride (LaB
6), niobium oxide (NbO, Nb
2O
3, Nb
2O
5) etc.; Low-index material can adopt: silica (SiO
2), silicon nitride (Si
3N
4), carborundum (SiC), alundum (Al (Al
2O
3) etc.
Embodiment 1: coating structure is: PET/TiO
2/ SiO
2/ TiO
2/ SiO
2/ MgF
2/ SiO
2The ARPET film
1, Electrostatic Treatment: the pet sheet face is carried out static discharge processing, guarantee the cleaning surfaces of PET film.Can adopt " air ionization " mode to neutralize or discharge static on the PET film, also can adopt " grenz ray " mode.
2, doping batching: will adopt the nano intercalated nanometer particle material TiO that divides after arching pushing is handled with high index of refraction and low-refraction
2, SiO
2And MgF
2, be doped to respectively in the heatproof transparent resin, be mixed with nano particle transparent resin with high and low refractive index.The heatproof transparent resin can adopt melmac, acrylic resin, epoxy resin, silicone resin or PVB (polyvinyl butyral resin) polyester etc.
3, dipping, coating: with the deployed nano particle transparent resin with high and low refractive index, on the PET film surface after the above-mentioned Electrostatic Treatment, even, fine and close film is made in alternately laminated dipping, coating respectively.Usually, ground floor TiO
2The thickness of film is 10nm～50nm; Second layer SiO
2The thickness of film is 10nm～50nm; The 3rd layer of TiO
2The thickness of film is 20nm～35nm; The 4th layer of SiO
2The thickness of film is 20nm～35nm; Layer 5 Al
2O
3The thickness of film is 20nm～30nm; Layer 6 Si
3N
4The thickness of film is 20nm～30nm.
4, oven dry: in 60 ℃～80 ℃ clean environment, heating, drying.
The performance characteristic of the ARPET antireflection film by method for preparing is:
(1), film densification, evenly, accomplish that really nanometer particle disperses, film adhesion is strong;
(2), the mist degree of film is low, the contrast height, the desirable and full light ray anti-reflection of antireflective optical property feature is controlled easily.
Two, the substrate of absorption near infrared ray (NIR) and orange-colored light (Ne_cut):
The present invention utilizes the magnetron sputtering principle, in the environment of high vacuum, gas ionization produces glow discharge, ionization goes out positive and negative ion and electronics, at a high speed bombard rake thin, make the atom of various rake thins or molecule, be splashed on the high-quality substrate by alternately laminated mode, combining closely with substrate surface forms fine and close, optical thin film uniformly, thus the substrate of preparation absorption near infrared ray and 590nm wavelength orange-colored light.
The sputtering method that the present invention adopts usually comprises: RF-reactively sputtered titanium, medium frequency reactive sputtering, high frequency reactive sputtering, dc reactive sputtering or electron gun sputter.
Above-mentioned rake thin can adopt: silica (SiO
2), carborundum (SiC), zinc oxide (ZnO), titanium dioxide (TiO
2), titanium nitride (Ti
3N
4), indium sesquioxide (In
2O
3), tin ash (SnO
2), chrome green (Cr
2O
3), zirconia (ZrO
2), tantalum pentoxide (Ta
2O
5), lanthanum hexaboride (LaB
6), niobium oxide (NbO, Nb
2O
3, Nb
2O
5), alundum (Al (Al
2O
3), zinc sulphide (ZnS), silicon nitride (Si
3N
4), zinc selenide deielectric-coating such as (ZnSe) and silver (Ag), gold metal films such as (Au).
The present invention adopts " RF-reactively sputtered titanium, medium frequency reactive sputtering, high frequency reactive sputtering or electron gun sputter " technology to prepare usually: silica (SiO
2), silicon nitride (Si
3N
4), carborundum optical thin films such as (SiC); Usually adopt " vacuum dc reactive sputtering or electron gun sputter " technology to prepare: zinc oxide (ZnO), titanium dioxide (TiO
2), titanium nitride (Ti
3N
4), indium sesquioxide (In
2O
3), tin ash (SnO
2), chrome green (Cr
2O
3), zirconia (ZrO
2), tantalum pentoxide (Ta
2O
5), lanthanum hexaboride (LaB
6), niobium oxide (NbO, Nb
2O
3, Nb
2O
5), alundum (Al (Al
2O
3), zinc sulphide (ZnS), zinc selenide optical thin films such as (ZnSe).
Above-mentioned substrate can adopt safety glass, half tempered glass.
Embodiment 2: preparation has " Ag/Au/Ta
2O
5/ TiO
2/ SiO
2/ Y
2O
5/ Nb
2O
5/ Ti
3N
4/ SiO
2" the half tempered glass of film layer structure
1, scrub the half tempered glass baseplate with spool roll brush or rotary broom with 50 ℃～60 ℃ neutral detergent earlier, adopting ultrasonic cleaning way resistivity again is the deionized water of 15～17M Ω .CM, and glass baseplate is cleaned.If the glass surface Electrostatic Treatment is thorough or the glass surface cleaning is unclean, true hole will appear in the optical thin film of preparation, causes film adhesion to reduce.
2, in temperature was 50 ℃～80 ℃ temperature field, double safety glass base material evenly toasted, and can adopt the infrared ray roasting mode.If toast inhomogeneously, can cause the reflection of optical thin film inhomogeneous, influence rete component and structure, also can reduce the adhesive force of rete.
3, vacuum coating: in the reactive sputtering chamber, charge into dielectric gas above-mentioned half tempered glass is after treatment carried out vacuum sputtering coating.Its main technologic parameters is:
| The rake position | I | II | III | IV | V | VI | VII | VIII |
| Rake thin | Ag | Au | Ta | Ti | Y | Nb | Ti | Si |
| Rake-cardinal distance (mm) | 65 | 65 | 65 | 65 | 65 | 65 | 65 | 60 |
| Ar(sccm) | 100 | 100 | 50 | 50 | 50 | 50 | 50 | 50 |
| O 2(sccm) | 0 | 0 | 60 | 60 | 60 | 60 | 80 | 80 |
| NO 2(sccm) | 0 | 0 | 40 | 40 | 40 | 40 | 60 | 0 |
| Rake voltage (V) | 450 | 450 | 450 | 450 | 400 | 400 | 400 | 3500 |
| Rake electric current (A) | 60 | 60 | 60 | 60 | 60 | 60 | 60 | 10 |
| Operating pressure (Pa) | 6.0×10 -4 | 6.0×10 -4 | 4.0×10 -4 | 4.0×10 -4 | ||||
| Glass is in the sputtering chamber speed of travel | 0.2～0.6m/min | |||||||
| Glass is at the sputtering chamber number of times that swings back and forth | 10～15 | |||||||
| Baking temperature (℃) | 60～80 | |||||||
Wherein: 1) rake-cardinal distance: distance between rake thin and the glass baseplate, it influences adhesion of thin film and uniformity of film; 2) Ar is a protective gas, NO
2, O
2It is the reacting gas of preparation film; 3) rake voltage, rake electric current: gas ionization produces " glow discharge " and ionization goes out positive and negative ion and electronics and bombard the energy of rake thin at a high speed.
According to the optical thin film of method for preparing, the thickness 5nm～10nm of ground floor Ag film; The thickness of second layer Au film is 5nm～10nm; The 3rd layer of Ta
2O
5The thickness of film is 10nm～35nm; The 4th layer of TiO
2The thickness of film is 20nm～35nm; Layer 5 SiO
2The thickness of film is 10nm～30nm; Layer 6 Y
2O
5The thickness of film is 10nm～30nm; Layer 7 Nb
2O
5The thickness of film is 10nm～30nm; The 8th layer of Ti
3N
4The thickness of film is 20nm～30nm; The 9th layer of SiO
2The thickness of film is 20nm～30nm.
Above-mentioned optical thin film of the present invention is owing to adopt directly sputter deielectric-coating and metal film on substrate, and removed PET, therefore the absorption near infrared ray for preparing than " adopting the single metal film of vacuum sputtering " and methods such as " adopt dipping, apply organic absorbing dye " and the substrate of orange-colored light have better optical signature:
(1), the optical property feature of good " absorption near infrared ray (between 780nm～1200nm) and absorption 590nm wavelength orange-colored light ";
(2), the mist degree of rete is low, visible light transmissivity is controlled easily;
(3), the surface adhesion force height of rete, the case hardness height, heat-resisting, moisture-proof, resistance to low temperature are good;
(4), adopt the contrast height of the protection screen of this structural membrane preparation, excitation is pure.
Three, electromagnetic shielding film (EMI Mesh Film/PET)
At first, adopt the vacuum magnetic-control sputtering coating technique, on the PET film, prepare metallic film, then, adopt high-accuracy plasma etching technology, preparation printing opacity electromagnetic shielding mesh film.
Above-mentioned vacuum magnetic-control sputtering coating technique can adopt vacuum magnetically controlled DC sputtering or electron gun sputter.
Above-mentioned high-accuracy plasma etching technology has: inductively coupled plasma lithographic technique (ICP, TCP), Ecr plasma lithographic technique (ECR).
The present invention also can adopt the photoetching technique of " mask, exposure ", prepares electromagnetic wave shielding mesh mesoporous metal film.
Usually the metal material of sputter has: silver (Ag), copper (Cu), nickel (Ni), gold (Au) etc.;
The dry etching system that is adopted in the high-accuracy plasma etching technology used in the present invention comprises: five parts such as vacuum system that the reative cell of etching reaction, the radio-frequency power supply that produces plasma, gas flow control system, removal etching product and gas take place.This lithographic technique adopts " in magnetic field " or adopts the mode of " electron cyclotron resonace ", produces etching and decomposes, and obtains the ionization level up to 10%, and etching wire netting pore membrane prepares the electromagnetic wave shielding printing opacity mesh film that optical filter is used.
Electromagnetic shielding printing opacity mesh film prepared according to the methods of the invention, the line of the tinsel of its nethike embrane directly can be controlled between 10 μ m～25 μ m, and the mesh spacing is between 250 μ m～300 μ m, and silk thread is from the horizontal by 45.This mesh film has very high full light transmission rate, does not have optical skew, and the sheet resistance of nethike embrane is very low, the electromagnetic wave shielding performance is very good.
Embodiment 3: preparation copper (Cu) mesh film
1, Electrostatic Treatment: the pet sheet face is carried out static discharge processing, guarantee the cleaning surfaces of PET film.Can adopt " air ionization " mode to neutralize or discharge static on the PET film, also can adopt " grenz ray " mode, neutralize or discharge static on the PET film by producing " ion pair ".
2, vacuum sputtering copper film: adopt vacuum magnetically controlled DC sputtering technology, on above-mentioned PET film after treatment, the splash-proofing sputtering metal copper film.
3, plasma etching nethike embrane: adopt the Ecr plasma lithographic technique, on above-mentioned metal copper film, etched line directly is 10 μ m, and the aperture is the copper mesh pore membrane of 300 μ m.
4, the removing of photoresist by plasma: remove behind the etching glue on the above-mentioned copper mesh pore membrane.Can adopt oxygen gas plasma to remove etching glue.
Four, the making of PDP protection screen
Adopt dry type drum-type overlay film to attach machine; substrate, black surround silk-screen layer, EMI Mesh Film/PET and conductive copper or nickel foil with ARPET, absorption near infrared ray (NIR) and absorption 590nm orange-colored light (Ne_cut); by the roll extrusion mode, be pasted together and make protection screen.
Dry type drum-type overlay film attaching machine comprises: automatically transmit, automatically compound, automatic rolling, cut apart dispatch control system automatically.
Protection screen by adopting roll extrusion coating technique method to make has the following advantages: 1) do not have flaws such as " fold, bubbles "; 2) increased the adhesive force of ARPET, EMI Mesh Film/PET film and substrate, each function filter membrane is held tightly together; 3), process stabilizing, easily control, constant product quality.
The present invention can also adopt: the coating technique methods such as vacuum Filming Technology, aqueous plaster embrane method, High Temperature Gas platen press, water-based UV stickup, substrate and the EMI Mesh Film/PET of ARPET, absorption near infrared ray (NIR) and absorption 590nm orange-colored light (Ne_cut) are pasted together, prepare the PDP protection screen.
Claims (4)
1.PDP the preparation method of the elimination high light reflectivity film of protection screen, its preparation method is: 1) Electrostatic Treatment: the PET film surface is carried out static discharge processing; 2) doping batching: will adopt the nanometer particle material after the nano particle dispersion technology is handled, and be doped to respectively in the heatproof transparent resin, and be mixed with nano particle transparent resin with high and low refractive index with high index of refraction and low-refraction; 3) dipping, coating: with the deployed nano particle transparent resin with high and low refractive index, on the PET film surface after the above-mentioned Electrostatic Treatment, even, fine and close film is made in alternately laminated dipping, coating respectively; 4) oven dry: in 60 ℃～80 ℃ environment, heating, drying.
2. the preparation method of the elimination high light reflectivity film of PDP protection screen as claimed in claim 1 is characterized in that: described step 1) adopts air ionization or grenz ray mode to carry out static release and handles.
3. the preparation method of the elimination high light reflectivity film of PDP protection screen as claimed in claim 1 is characterized in that: step 2) described heatproof transparent resin adopts melmac, acrylic resin, epoxy resin, silicone resin or PVB polyester.
4. the preparation method of the elimination high light reflectivity film of PDP protection screen as claimed in claim 1 is characterized in that: step 2) nano intercalated arching pushing or the nanometer vibromill dispersion method of dividing of described nano particle dispersion technology employing.
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|---|---|---|---|
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100205464A CN100368099C (en) | 2005-03-21 | 2005-03-21 | Method for preparing film of elimination of reflection for PDP protection screen |
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| Publication Number | Publication Date |
|---|---|
| CN1757443A CN1757443A (en) | 2006-04-12 |
| CN100368099C true CN100368099C (en) | 2008-02-13 |
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| JP4636079B2 (en) * | 2007-12-25 | 2011-02-23 | セイコーエプソン株式会社 | Coloring structure and method for producing the same |
| CN101916699B (en) * | 2010-08-19 | 2011-11-16 | 四川虹欧显示器件有限公司 | Electrostatic prevention method and system for PDP module assembly line |
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| JPH11138677A (en) * | 1997-11-12 | 1999-05-25 | Toppan Printing Co Ltd | Conductive reflection preventing film and its manufacture |
| US6150754A (en) * | 1997-12-22 | 2000-11-21 | Bridgestone Corporation | Electromagnetic-wave shielding and light transmitting plate and display panel |
| CN1463367A (en) * | 2001-04-17 | 2003-12-24 | 索尼公司 | Antireflection film and antireflection layer-affixed plastic substrate |
| JP2004118094A (en) * | 2002-09-27 | 2004-04-15 | Hitachi Maxell Ltd | Antireflection film, its manufacture method and antireflection panel using the film |
| WO2004088364A1 (en) * | 2003-03-31 | 2004-10-14 | Lintec Corporation | Optical film |
| JP2005070435A (en) * | 2003-08-25 | 2005-03-17 | Fuji Photo Film Co Ltd | Manufacturing method for antidazzle antireflection coating |
-
2005
- 2005-03-21 CN CNB2005100205464A patent/CN100368099C/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0748117A (en) * | 1993-08-06 | 1995-02-21 | Sumitomo Osaka Cement Co Ltd | Porous silica sol and its production |
| JPH11138677A (en) * | 1997-11-12 | 1999-05-25 | Toppan Printing Co Ltd | Conductive reflection preventing film and its manufacture |
| US6150754A (en) * | 1997-12-22 | 2000-11-21 | Bridgestone Corporation | Electromagnetic-wave shielding and light transmitting plate and display panel |
| CN1463367A (en) * | 2001-04-17 | 2003-12-24 | 索尼公司 | Antireflection film and antireflection layer-affixed plastic substrate |
| JP2004118094A (en) * | 2002-09-27 | 2004-04-15 | Hitachi Maxell Ltd | Antireflection film, its manufacture method and antireflection panel using the film |
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| JP2005070435A (en) * | 2003-08-25 | 2005-03-17 | Fuji Photo Film Co Ltd | Manufacturing method for antidazzle antireflection coating |
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