CN100356546C - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN100356546C CN100356546C CNB2005100893159A CN200510089315A CN100356546C CN 100356546 C CN100356546 C CN 100356546C CN B2005100893159 A CNB2005100893159 A CN B2005100893159A CN 200510089315 A CN200510089315 A CN 200510089315A CN 100356546 C CN100356546 C CN 100356546C
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- Prior art keywords
- copper
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- interconnection
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims description 44
- 239000010949 copper Substances 0.000 claims abstract description 161
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 128
- 229910052802 copper Inorganic materials 0.000 claims abstract description 128
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 15
- 230000004888 barrier function Effects 0.000 claims description 44
- 239000002184 metal Substances 0.000 claims description 44
- 229910052751 metal Inorganic materials 0.000 claims description 44
- 238000005516 engineering process Methods 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 23
- 238000000137 annealing Methods 0.000 claims description 19
- 238000009713 electroplating Methods 0.000 claims description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 238000004544 sputter deposition Methods 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 238000007747 plating Methods 0.000 claims description 8
- 208000005189 Embolism Diseases 0.000 claims description 5
- 239000011800 void material Substances 0.000 abstract 3
- 230000007547 defect Effects 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 description 26
- 239000010410 layer Substances 0.000 description 23
- 239000013078 crystal Substances 0.000 description 19
- 230000008569 process Effects 0.000 description 15
- 238000005530 etching Methods 0.000 description 12
- 238000011049 filling Methods 0.000 description 10
- 230000005012 migration Effects 0.000 description 10
- 238000013508 migration Methods 0.000 description 10
- 238000002955 isolation Methods 0.000 description 9
- 238000001259 photo etching Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 235000017060 Arachis glabrata Nutrition 0.000 description 1
- 241001553178 Arachis glabrata Species 0.000 description 1
- 235000010777 Arachis hypogaea Nutrition 0.000 description 1
- 235000018262 Arachis monticola Nutrition 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910020177 SiOF Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 235000020232 peanut Nutrition 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004229779A JP4455214B2 (ja) | 2004-08-05 | 2004-08-05 | 半導体装置およびその製造方法 |
JP2004229779 | 2004-08-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1731575A CN1731575A (zh) | 2006-02-08 |
CN100356546C true CN100356546C (zh) | 2007-12-19 |
Family
ID=35756624
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100893159A Active CN100356546C (zh) | 2004-08-05 | 2005-08-03 | 半导体器件及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7728432B2 (zh) |
JP (1) | JP4455214B2 (zh) |
CN (1) | CN100356546C (zh) |
DE (1) | DE102005034182B4 (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1845554A3 (en) * | 2006-04-10 | 2011-07-13 | Imec | A method to create super secondary grain growth in narrow trenches |
JP4783261B2 (ja) * | 2006-10-30 | 2011-09-28 | 株式会社東芝 | 半導体装置の製造方法 |
JP5169838B2 (ja) * | 2007-01-09 | 2013-03-27 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
JP2008198703A (ja) * | 2007-02-09 | 2008-08-28 | Nec Electronics Corp | 半導体装置の製造方法 |
US20090115022A1 (en) * | 2007-11-06 | 2009-05-07 | Nec Electronics Coroporation | Semiconductor device |
US8772156B2 (en) * | 2008-05-09 | 2014-07-08 | International Business Machines Corporation | Methods of fabricating interconnect structures containing various capping materials for electrical fuse and other related applications |
US7956466B2 (en) | 2008-05-09 | 2011-06-07 | International Business Machines Corporation | Structure for interconnect structure containing various capping materials for electrical fuse and other related applications |
JP5428280B2 (ja) * | 2008-10-16 | 2014-02-26 | 大日本印刷株式会社 | 貫通電極基板及び貫通電極基板を用いた半導体装置 |
JP4441658B1 (ja) | 2008-12-19 | 2010-03-31 | 国立大学法人東北大学 | 銅配線形成方法、銅配線および半導体装置 |
JP5788785B2 (ja) * | 2011-01-27 | 2015-10-07 | 東京エレクトロン株式会社 | Cu配線の形成方法および成膜システム |
US8816218B2 (en) * | 2012-05-29 | 2014-08-26 | Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. | Multilayer electronic structures with vias having different dimensions |
TWI490962B (zh) * | 2013-02-07 | 2015-07-01 | Univ Nat Chiao Tung | 電性連接結構及其製備方法 |
US11908738B2 (en) | 2021-10-18 | 2024-02-20 | International Business Machines Corporation | Interconnect including integrally formed capacitor |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6242349B1 (en) * | 1998-12-09 | 2001-06-05 | Advanced Micro Devices, Inc. | Method of forming copper/copper alloy interconnection with reduced electromigration |
US6249055B1 (en) * | 1998-02-03 | 2001-06-19 | Advanced Micro Devices, Inc. | Self-encapsulated copper metallization |
CN1357157A (zh) * | 1999-06-22 | 2002-07-03 | 日本电气株式会社 | 铜互连 |
US6444567B1 (en) * | 2000-01-05 | 2002-09-03 | Advanced Micro Devices, Inc. | Process for alloying damascene-type Cu interconnect lines |
US6709970B1 (en) * | 2002-09-03 | 2004-03-23 | Samsung Electronics Co., Ltd. | Method for creating a damascene interconnect using a two-step electroplating process |
WO2004030089A1 (en) * | 2002-09-26 | 2004-04-08 | Advanced Micro Devices, Inc. | Method of forming a copper interconnect with concentrated alloy atoms at copper-passivation interface |
US20040106277A1 (en) * | 2002-12-03 | 2004-06-03 | Taiwan Semiconductor Manufacturing Company | Integrated process flow to improve copper filling in a damascene structure |
CN1503345A (zh) * | 2002-11-20 | 2004-06-09 | 国际商业机器公司 | 在不使用化学机械抛光的情况下形成平坦的Cu互连的方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0751566A3 (en) * | 1995-06-30 | 1997-02-26 | Ibm | Metal thin film barrier for electrical connections |
JP3351383B2 (ja) * | 1999-04-21 | 2002-11-25 | 日本電気株式会社 | 半導体装置の製造方法 |
JP3741938B2 (ja) | 1999-06-22 | 2006-02-01 | 日本電気株式会社 | 銅配線の形成方法 |
US6303490B1 (en) * | 2000-02-09 | 2001-10-16 | Macronix International Co., Ltd. | Method for barrier layer in copper manufacture |
JP4063619B2 (ja) * | 2002-03-13 | 2008-03-19 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP4555540B2 (ja) | 2002-07-08 | 2010-10-06 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
-
2004
- 2004-08-05 JP JP2004229779A patent/JP4455214B2/ja not_active Expired - Fee Related
-
2005
- 2005-07-21 DE DE102005034182A patent/DE102005034182B4/de active Active
- 2005-07-21 US US11/185,937 patent/US7728432B2/en active Active
- 2005-08-03 CN CNB2005100893159A patent/CN100356546C/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6249055B1 (en) * | 1998-02-03 | 2001-06-19 | Advanced Micro Devices, Inc. | Self-encapsulated copper metallization |
US6242349B1 (en) * | 1998-12-09 | 2001-06-05 | Advanced Micro Devices, Inc. | Method of forming copper/copper alloy interconnection with reduced electromigration |
CN1357157A (zh) * | 1999-06-22 | 2002-07-03 | 日本电气株式会社 | 铜互连 |
US6444567B1 (en) * | 2000-01-05 | 2002-09-03 | Advanced Micro Devices, Inc. | Process for alloying damascene-type Cu interconnect lines |
US6709970B1 (en) * | 2002-09-03 | 2004-03-23 | Samsung Electronics Co., Ltd. | Method for creating a damascene interconnect using a two-step electroplating process |
WO2004030089A1 (en) * | 2002-09-26 | 2004-04-08 | Advanced Micro Devices, Inc. | Method of forming a copper interconnect with concentrated alloy atoms at copper-passivation interface |
CN1503345A (zh) * | 2002-11-20 | 2004-06-09 | 国际商业机器公司 | 在不使用化学机械抛光的情况下形成平坦的Cu互连的方法 |
US20040106277A1 (en) * | 2002-12-03 | 2004-06-03 | Taiwan Semiconductor Manufacturing Company | Integrated process flow to improve copper filling in a damascene structure |
Non-Patent Citations (2)
Title |
---|
New approaches for the assessment of stress-inducedvoiding in cu interconnects. A.Von Glasow, A.H.Fischer.IEEE. 2002 * |
Suppression of stress-induced voiding in copperinterconnects. T.Oshima et al. IEEE,IEDM. 2002 * |
Also Published As
Publication number | Publication date |
---|---|
DE102005034182B4 (de) | 2010-01-28 |
CN1731575A (zh) | 2006-02-08 |
DE102005034182A1 (de) | 2006-03-16 |
US7728432B2 (en) | 2010-06-01 |
US20060027931A1 (en) | 2006-02-09 |
JP4455214B2 (ja) | 2010-04-21 |
JP2006049641A (ja) | 2006-02-16 |
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CP01 | Change in the name or title of a patent holder |
Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: NEC Corp. |
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CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: Tokyo, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: Renesas Electronics Corporation |