CN100339985C - Shaped springs and methds of fabricating and using shaped springs - Google Patents

Shaped springs and methds of fabricating and using shaped springs Download PDF

Info

Publication number
CN100339985C
CN100339985C CNB018110053A CN01811005A CN100339985C CN 100339985 C CN100339985 C CN 100339985C CN B018110053 A CNB018110053 A CN B018110053A CN 01811005 A CN01811005 A CN 01811005A CN 100339985 C CN100339985 C CN 100339985C
Authority
CN
China
Prior art keywords
cross tie
element material
tie part
substrate
outside stimulus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB018110053A
Other languages
Chinese (zh)
Other versions
CN1451179A (en
Inventor
G·L·马蒂厄
B·N·埃尔德里奇
S·W·文策尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FormFactor Inc
Original Assignee
FormFactor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/547,561 external-priority patent/US7458816B1/en
Priority claimed from US09/547,560 external-priority patent/US6640432B1/en
Application filed by FormFactor Inc filed Critical FormFactor Inc
Publication of CN1451179A publication Critical patent/CN1451179A/en
Application granted granted Critical
Publication of CN100339985C publication Critical patent/CN100339985C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06755—Material aspects
    • G01R1/06761—Material aspects related to layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06733—Geometry aspects
    • G01R1/06744—Microprobes, i.e. having dimensions as IC details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07342—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being at an angle other than perpendicular to test object, e.g. probe card
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0104—Zirconium [Zr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01045—Rhodium [Rh]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01088—Radium [Ra]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01094—Plutonium [Pu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/143—Digital devices
    • H01L2924/1433—Application-specific integrated circuit [ASIC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Battery Mounting, Suspending (AREA)
  • Connecting Device With Holders (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

An interconnection element and a method of fabricating and using an interconnect element that includes a first element material adapted to be coupled to a substrate and a second element material comprising a material having a transformable property such that upon transformation, a shape of the interconnection is modified. An example is a material that has a transformable property such that a volume of the first and/or second element material may undergo a thermal transformation from one volume to a different volume (such as a smaller volume).

Description

The method of shaping spring and manufacturing and use shaping spring
Technical field
The present invention relates to interconnection (contact) part of the effective connection between a kind of suitable electronic component.
Background technology
Interconnection or contact can be used for device or an electronic component of electronic component are connected to another electronic component.For example, cross tie part can be used for connecting two circuit of integrated circuit (IC) chip or connects an application-specific IC (ASIC).Cross tie part also can be used for integrated circuit (IC) chip is connected to chip assembly on the printed circuit board (PCB) (PCB) that is suitable for being installed in computer or other electronic installation, or integrated circuit (IC) chip is directly connected to PCB.Cross tie part also can be used for integrated circuit (IC) chip is connected to testing apparatus such as a probe card board component or other substrate, with test chip.
Generally speaking, interconnection between the electronic component or contact can be divided at least two main kinds: " lasting relatively " and " being easy to dismounting ".
An example of the contact of " lasting relatively " is a wiring harness.In case so that two electronic components interconnect, must use a release process to come resolution element by cross tie part is attached to each electronic component.Usually adopt the cross tie part of " relative lasting " such as the wiring harness cross tie part between the inner lead (or all the inners of lead frame contact) of integrated circuit (IC) chip or small pieces and chip or assembly.
An example of the cross tie part of " be easy to dismounting " is the cross tie part between all rigidity plugs of an electronic component, and this electronic component is admitted by the resilient socket element of another electronic component, for example, and a spring-loaded lga socket or one zero insertion force sockets.The cross tie part of second kind " be easy to dismounting " be self have elasticity or spring-like be installed in a spring or the elastic fluid or on cross tie part.An example of this kind cross tie part is the U.S. Patent No. 5 such as the common transfer that is filed on November 2nd, 1999, is entitled as " method of most advanced and sophisticated complanation that makes the detecting element of probe card board component ", the tungsten pin or the microsprings contact of the described probe card board member of 974,662 (FFI-P06).The cross tie part of probe card board member realizes that temporary transient pressure is connected usually between the terminal of the electronic component that cross tie part is housed and second electronic component (for example semiconductor device in the test).
About the spring cross tie part, expectation realizes the reliable pressure of electronic component (for example, to terminals of electronic components) is contacted with minimum contact force usually.For example, expectation with contact (loadings) power of about 15 grams (comprise each terminal 2 grams or 2 grams following and 150 restrain or 150 restrain more than) realize the reliable electric pressure of a terminal of electronic component is connected.
Second factor relevant with the spring cross tie part is shape and the metallurgical property that cross tie part makes the part of terminals of electronic components pressure connection.About the tungsten pin as the spring cross tie part, for example, the metallurgical property that is subjected to element (being tungsten) has limited contact jaw, along with the diameter of tungsten pin diminishes gradually, in the control of contact jaw place or the shape of the setting up expectation difficulty more that will correspondingly become.
In some cases, self does not have elasticity cross tie part, but is supported by elastic membrane.The elastic membrane probe this situation of having demonstrated wherein is arranged on a plurality of micro-protrusions on the elastic membrane.In addition, made the required technical limitations of this contact for the shape of the contact portion of contact and the design alternative of metallurgical property.
Be filed in the U.S. Patent application No.08/152 of the common transfer on November 16th, 1993,812 (being the U.S. Patent No. 5,476,211 that is filed in December 19 nineteen ninety-five now) (FFI-P01) have been disclosed the method that is used to make the spring cross tie part.In a preferred embodiment, these spring cross tie parts that are particularly useful for microelectronic applications with an end of flexible thin component (for example relate to, electric wire " trunk " or " skeleton ", sometimes be " core ") be installed to the terminal on the electronic component, and apply " shell " of one or more materials at the neighbouring surface of flexible member and terminal.Those skilled in the art can select the combination of thickness, yield strength and the modulus of elasticity of flexible piece and sheathing material, so that consequent spring cross tie part provides gratifying pressure deflection feature.The exemplary materials that is used for core comprises gold.The exemplary materials that is used for coating comprises nickel and alloy thereof.Consequent spring cross tie part is suitable for realizing pressure or the detachably interconnecting between two or more electronic components (comprising semiconductor device).
Along with electronic component diminishes gradually, the spacing between all terminals on the electronic component diminishes (pitch is tapered) gradually, makes interconnection that all terminals be suitable for making electronic component the are electrically connected difficulty more that becomes gradually.Be filed on February 18th, 1997, be entitled as awaiting the reply jointly and the U.S. Patent application No.08/802 of common transfer of " microelectronics contact structures and make the method for this structure ", 054 (FFI-P34) (this paper will quote its full content as a reference) and the PCT that is published in the correspondence on November 27th, 1997 apply for that WO97/44676 has disclosed a kind of method of making the spring cross tie part by lithography technique.In one embodiment, this application has disclosed and formed spring cross tie part (comprising that is the spring cross tie part of cantilever beam) on the substrate of sacrifice property, then cross tie part is transmitted and is installed to the terminal on the electronic component.In this discloses, the spring cross tie part is formed in the substrate itself by etching technique.At the U.S. Patent application No.08/852 that is entitled as the awaiting the reply jointly of " microelectronic spring contact ", common transfer, among 152 (FFI-P35), go up at a substrate (comprising that is the substrate of electronic component) by the following method and form the spring cross tie part, promptly by deposit a plurality of shielding layers and make its form pattern with constitute one with the shape corresponding opening of spring cross tie part, deposits conductive material in the opening that constitutes by the shielding layer that forms pattern, and remove shielding layer to form free-standing spring cross tie part.
Be entitled as awaiting the reply jointly and the U.S. Patent application No.09/023 of common transfer of " microelectronics contact structures and make the method for this structure ", 859 have narrated a kind of cross tie part with a bottom part (post member), a body part (beam) and contact jaw part (pointed member), and form each part separately and as required the post part is connected jointly method on the electronic component.
Authorize people's such as Smith U.S. Patent No. 5,613,861 (and corresponding division U.S. Patent No.s 5,848,685) disclosed and be formed on an on-chip spring cross tie part that forms pattern by lithoprinting, this spring cross tie part has a body of being made by the elasticity such as chrome molybdenum or nickel-zirconium alloys (for example elastomer) material, and this body has inherent stress gradient.When an end of body broke away from substrate, it is curved that stress gradient makes this end bent leave substrate.
For the body shape that obtains to expect, people such as Smith must limit U.S. Patent No. 5,613, the thickness of 861 described cross tie parts.The qualification of the thickness of cross tie part has been limited the spring constant k (k increases along with the increase of thickness) of cross tie part, especially in the cross tie part array of the present art, reduce the size (for example, length and width) of single interconnection array, to adapt to the corresponding increase of contact mat or terminal density.The minimizing of spring constant can reduce usually and puts on the elastic interconnection part and be used for the load of a certain deflection x (k=F/x) or the quantity of power F.Thereby this kind cross tie part bears the contact force of an appropriateness usually at the most, and this contact force is not enough to realize that the reliable pressure to electronic component contacts.
Need a kind of elastic interconnection part and improve the flexible method of cross tie part, especially be fit to the cross tie part that present little spacing was electrically connected and can be used for WeiLai Technology.The manufacture method that also needs improved elastic interconnection part, especially repeatably, unanimity and inexpensive method.
Summary of the invention
Disclosed the method for a kind of cross tie part and manufacturing and use cross tie part.In one embodiment, cross tie part comprises: one first element material, and this first element material is suitable for being connected to a substrate; And one second element material, this second element material is connected to first element material.At least a of first element material and second element material comprises that but one has the material of property of transition, so that change the shape of described cross tie part when changing.An example is that first and/or second element material has a kind of character, so that one first volume of material is suitable for changing into one second, different volume.
The part of cross tie part of the present invention can be connected on the substrate such as electronic component, and in a substrate place and a signal electrical communication.Cross tie part can adopt multiple structure, so that in interconnection strain during two electronic components.A preferred embodiment is a kind of cantilevered construction, and wherein the free end of cross tie part can be used for being electrically connected, and for example surveys the contact mat or the terminal of another electronic component or is electrically connected two electronic components.
In one aspect of the invention, first element material and second element material of cross tie part are arranged to a kind of structure,, and make first volume greater than second volume so that second element material is positioned at first element material top.In this case, change the second less volume into and cause cross tie part some part distortion along its length.Adopt in the example of an on-chip cantilevered construction at cross tie part, volume changes the free end distortion that can cause cross tie part in one embodiment and leaves (being deflection) its free end towards the substrate that connects base curve, thereby the cross tie part of a projection is provided.For example, can limit the distance that interconnection can depart from substrate, so that under certain conditions, for a plurality of cross tie parts of (or substrate top) on the substrate can be set up consistent deflection distance by a retainer.In case the warpage of cross tie part can keep or remove second element material, to obtain the cross tie part of two materials or single material respectively.
The cross tie part of making by the material that provides an experience character to change is so that the cross tie part distortion, thereby can simplify the manufacturing of on-chip cross tie part, surpasses the method for prior art.Two materials or single material cross tie part also can be used as the predecessor or the core of final interconnection structure, by in conjunction with other material or layer (for example elastic layer) forming final structure, thereby form cross tie part.
Also disclosed a kind of electronic building brick.In one embodiment, electronic building brick comprises a substrate, this substrate have a plurality of on substrate come-at-able contact terminal and a plurality of free standing spring cross tie part, these cross tie parts are connected in substrate in one way, so that in the electric contact one corresponding all contact terminals of an a connection piece of a cross tie part or a base portion one.In another embodiment, contact terminal is the holding wire on the substrate or in the substrate.In one aspect, cross tie part comprises that first element material and that is suitable for being connected to a substrate is connected to second element material of first element material.One of first element material and second element material comprise that but one has the material of property of transition, so that change the shape of cross tie part when changing.Example is that first and/or second element material has the character that one first volume that can make material is suitable for changing into different second volume.
Also disclosed a kind of method.Method comprises: form one and be connected to the cross tie part of a substrate, and comprise one first element material and one second element material; At one end cross tie part is discharged and leave substrate; An and character that changes one of first element material and second element material, so that cross tie part distortion.The example that character changes be first element material and one of second element material volume from one first volume be converted to one second, different volume.In one embodiment, before or after conversion step, discharge an end of cross tie part.
In one aspect, cross tie part can adopt multiple structure, and the free end of the cross tie part cantilever that can be used for being electrically connected for example is so that survey or be electrically connected an electronic building brick.Second element material can be positioned at the top of first element material, thereby in one embodiment, volume changes to be caused such as second volume less than first volume.Under the situation of cantilever cross tie part, the free end of cross tie part is distortion when changing, so that the free end of contact leaves substrate.After changing, can remove second element material, to form the cross tie part of a single material.A kind of operation in back is for particularly useful the surplus material in the state that will keep improved shape more or less.
The cross tie part that forms by method of the present invention can use separately or as the predecessor of final interconnection structure.In one embodiment, method comprises: after conversion step, make the masking material of substrate top form pattern, so that have the opening on an exposure cross tie part surface; And a three element material (a for example elastomeric material) is coated on the exposed surface of cross tie part, to increase the spring constant of cross tie part.A kind of suitable masking material is the electrophoresis erosion resistant that can refer on the substrate surface.Using the electrophoresis erosion resistant is under the situation of not destroying (for example damaging) on-chip cross tie part or element it evenly to be referred to this surface as an advantage of masking material.
The product that comprises novel contact can be fixed in one second electronic component by pressure, as at clamping device that is used for testing wafer or sniffer.About the same with the conventional method that ICs is installed on system board, also can be by welding fixed product more enduringly.
Drawings and detailed description according to this paper can be known additional features, embodiment and advantage.
Description of drawings
Following detailed description, appending claims and accompanying drawing will make feature of the present invention, various aspects and advantage become more clear, wherein:
Fig. 1 shows the sectional view of the part of electronic component, and this electronic component has a plurality of contact mats, and the top of all pads has a short circuit layer;
The masking material that Fig. 2 shows the substrate top forms pattern, and has the structure of opening Fig. 1 afterwards of a plurality of contact mats that lead to the first embodiment of the present invention;
Fig. 3 shows the structure of the Fig. 1 after the heat treatment;
Fig. 4 shows the structure of the Fig. 1 after the top face of structure is similarly quoted an active layer;
One second masking material that Fig. 5 shows the top face of structure forms the structure of the Fig. 1 after the pattern;
Fig. 6 shows the structure of quoting first element material Fig. 1 afterwards in all openings that second masking material forms;
Fig. 7 shows the structure of quoting the Fig. 1 after second element material above first element material;
Fig. 8 shows the structure of removing second masking material Fig. 1 afterwards;
Fig. 9 shows the structure of removing the adhesive layer material Fig. 1 afterwards that exposes;
Figure 10 shows the structure of removing first masking material Fig. 1 afterwards;
Figure 11 shows the structure of the volume that causes second element material Fig. 1 after changing;
Figure 12 shows the structure that similarly deposits one the 3rd masking material Fig. 1 afterwards;
Figure 13 shows the structure of the Fig. 1 that forms the 3rd masking material;
Figure 14 shows and forms the 3rd masking material and have a structure of leading to the Fig. 1 after the opening of second element material;
Figure 15 shows the structure of the Fig. 1 quote the three element material above the expose portion of second element material after;
Figure 16 shows the structure of quoting the Fig. 1 after the detecting material above the three element material;
Figure 17 shows the structure of removing the 3rd masking material Fig. 1 afterwards;
Figure 18 shows the structure of quoting stop material Fig. 1 afterwards;
Figure 19 shows the structure that makes the stop material form pattern Fig. 1 afterwards;
Figure 20 shows the structure of quoting one second contact material Fig. 1 afterwards;
Figure 21 shows the schematic diagram of deflection distance and the variable thickness of second element material of nickel/cobalt alloy of cross tie part of first element material of the palladium/cobalt alloy of 200 microinch chis (about 5 microns);
Figure 22 shows the sectional view of a part of the electronic component of another embodiment of the present invention, this electronic component have short circuit layer, the short circuit layer top of contact mat top masking material, masking material top active layer and be directed to the active layer top and form first element material of pattern;
Figure 23 shows and quote a structure that is in the Figure 22 after marmem (SMA) material of martensitic state above forming first element material of pattern;
Figure 24 shows the structure that the SMA material forms pattern Figure 22 afterwards;
Figure 25 shows the structure of removing first element material Figure 22 afterwards;
Figure 26 shows the structure that the SMA material transition becomes its remember condition Figure 22 afterwards;
Figure 27 shows the structure of removing SMA material Figure 22 afterwards;
Figure 28 shows detecting material and contact material is referred to the structure that each cross tie part and stop material form the Figure 22 after the pattern.
Embodiment
The present invention relates to comprise the cross tie part of contact.According to an aspect of the present invention, at least at first, cross tie part comprises at least two kinds of materials, and one or both of material are suitable for experience to be changed, so that the warpage of cross tie part.Example be at least a material from one first volume change one second into, different volume, volume changes the alteration of form that causes cross tie part.An advantage of cross tie part of the present invention is shape, elasticity and the spring constant that this structure can form expectation according to the technology of simplifying.
In this kind mode, the present invention has narrated a kind of cross tie part, this cross tie part has the improvement feature above the cross tie part of prior art, thereby improved the applicability of in the present and following small size is used, using cross tie part of the present invention, these application are included in conductive path are provided between the electronic component, for example among contacting and/or testing the contact mat or terminal of an electronic component.
At least a transformation (for example volume transformation) narrated in two kinds of interconnection materials below is discussed, so that the warpage of cross tie part (for example change).At least a according in two kinds of material structures, wherein one second material is positioned at the top of one first material, and several transformation situations may take place.These situations include but not limited to: the experience volume changes one second element material of smaller size smaller into; The experience volume is transformed into one first element material of larger volume; Experience the volume transformation separately so that one first element material and one second element material (also having additional materials) of cross tie part distortion; And two kinds of materials with warpage different stress characteristics, by making cross tie part such as heat treatment.Generally speaking, be appreciated that the characteristic of metal material under variations in temperature in the art, the present invention utilizes this characteristic to design the cross tie part with improved elasticity and spring constant in a simplified manner.
In following embodiment, suitable electronic component comprises but is not limited to: an active semi-conductor device; One storage chip; The part of semiconductor wafer comprises semiconductor wafer or the small pieces made by such as silicon (Si) or GaAs any suitable semi-conducting materials such as (GaAs); One ceramic substrate; One organic substrate; One printed circuit board (PCB) (PCB); One organic membrane; One polyimides sheet material; One space transformer (space transformer); One probe card plate; One chip carrier; One product interconnecting socket; One test jack; One sacrificial member; Include but not limited to the semiconductor assembly of pottery and plastic assembly and chip carrier; And connector.Electronic component can be to support one or more active devices that are electrically connected or passive device.Generally speaking, suitable electronic component comprises but is not limited to comprise the device of an integrated circuit that this integrated circuit has at least two contact mat or the terminals that make power on circuitry.This device can have the contact mat of exposure of a plurality of integrated circuits that lead to device or integrated circuit (IC) chip (or microchip) demoncal ration of terminal by one.
Cross tie part of the present invention can be manufactured on the connected electronic component, or is independent of this electronic component.Under independent situation about making, the present invention considers that can make shape, size and metallurgical property is not subjected to material related with the manufacturing of electronic component and layout to consider the cross tie part or the element of restriction.The independent manufacturing also can avoid electronic component to be exposed under the process conditions relevant with forming cross tie part.Be fabricated directly under the on-chip situation, the present invention considers and cross tie part can be formed directly on on-chip contact or the terminal, thereby reduces transfer operation and reduce alignment issues.
Cross tie part of the present invention is arranged on the electronic component such as the space transformer of a probe card board component, and it is designed to be fit to hold the contact mat or the terminal of the electronic component with very little pitch or spacing tolerance.In one embodiment, cross tie part of the present invention adopts alternately directed (for example, L-R-L-R), so as between to obtain between its leg portion than its tip portion bigger pitch.In another embodiment, cross tie part of the present invention adopts length (for example weak point-length-weak point-length) alternately, so that obtain the pitch bigger than the point office of adjacent cross tie part between pillar or fixed part.Similarly, can make cross tie part alternately, so that have than its pillar or the bigger pitch of fixed part in its point office.In a word, no matter cross tie part is manufactured on the connected electronic component or is independent of this electronic component, and they can adopt multiple orientation to adapt to the relevant multiple structure of electronic component that is in contact with it.
Fig. 1 shows the sectional view of electronic component or structure 100.For example, structure 100 is space transformers of probe card board component or integrated circuit.In this example, structure 100 comprises the substrate 110 of semiconductor, organic, metal or ceramic base, and this substrate has contact mat or terminal 120 on the surface of substrate 110.(for example, the multi-layered ceramic substrate such as pottery (LTCC) substrate of low temperature, common roasting under) the situation, structure 100 can contain corresponding contact mat or terminal 121 on the apparent surface of substrate 110 at the ceramic matrix electronic element that can buy from market.For example, connect corresponding contact pad or terminal 121 on the apparent surface, for example circuit of making by the combination of molybdenum, copper, gold, nickel or tungsten and aluminium or these materials or its alloy or other conducting element and alloy thereof by the conducting wire 119 of running through substrate 110.Can be at the U.S. Patent application No.09/032 that is filed on February 26th, 1998, is entitled as the awaiting the reply jointly of " the microelectronics contact structures that form with planography way ", common transfer, the content that 473 (FFI-P048) and be disclosed in the details that finds material, thickness, processing modification and so among the PCT application of equal value WO 98/52224 on November 9th, 1998, this paper will quote them as a reference.
For example, contact mat on the substrate 110 or terminal 120 are copper, nickel and gold, and these materials are fit to by connecting a cross tie part such as sputter, plating or welding, and this cross tie part is formed up to the sedimentary deposit of electric conducting material.In one example, copper helps electroplating processing, and is top layer.
In this embodiment, the substrate 110 of covered structure 100 is short circuit layer 130.For example, short circuit layer 130 is copper (Cu), titanium (Ti) or titanium-tungsten (Ti-W) or other proper metal or alloy, and in some sense, they can be used for short circuit contact mat or terminal 120 during the formation of the cross tie part on the substrate 110.As from following explanation, being clear that, can advantageously adopt the short circuit feature of short circuit layer 130, for the electrolytic process (for example electroplating process) that is used for manufacturing cross tie part on substrate 110 is set up suitable electromotive force.Should be understood that, that electrolytic process is a kind of technology that is used to form cross tie part of the present invention, other technology also can be suitable, for example chemistry or sputtering sedimentation or chemical plating processing.Should be understood that, can be on two surfaces of substrate 110 simultaneously or carry out described process in succession, to produce one " two-sided " spring assembly.Under this kind situation, can exist between contact structures on the apparent surface and/or the cross tie part to distribute again and non-one-to-one relationship.
In one embodiment, by quote the short circuit layer 130 of about 3000  to 6000  of thickness (for example, about 5000 ) such as the surface that sputters at substrate 110.Perhaps, can above the opposite side of substrate 110, quote short circuit layer 130, so that extend through the contact mat or terminal 121 short circuits of substrate 110.
Fig. 2 shows the surface structure 100 afterwards that the first masking material bed of material 140 is deposited on substrate 110.In one embodiment, the first masking material bed of material 140 is the lip-deep photoresists that are spin-coated on substrate 110, and forms pattern as known in the art.Deposit the first masking material bed of material 140, and make it form pattern to comprise some openings.All openings can be positioned at the directly position above a part of contact mat or terminal 120, perhaps, in some cases, can be positioned at the position away from contact mat or terminal 120.By away from all openings of the location positioning of contact mat or terminal, can on electronic component, make cross tie part with the layout of contact mat that is different from electronic component or terminal.Be filed on October 20th, 1997, be entitled as the U.S. Patent application No.08/955 that awaits the reply jointly of " electronic component that has resilient contact in location " away from corresponding terminal, narrated the example of the detailed description that rearranges contact mat or terminal among 001 (FFI-P041), this patent has been transferred the possession of in assignee of the present invention, and this paper will quote its content as a reference.This list of references also includes the discussion of the masking material of usefulness.
In one embodiment, the deposit thickness of the first masking material bed of material 140 is about 15-25 micron (μ m).The deposit thickness of the first masking material bed of material 140 is generally subsequently the minimum spacing of the expectation between the surface of the body of the cross tie part that forms and substrate 110.In expecting to have flexible example, must select the thickness of the first masking material bed of material 140, so that possible " touching the end " of cross tie part reduced to minimum.
At the first masking material bed of material 140 is among the embodiment of a photoresist, photoresist form pattern and develop into have lead to contact mat or terminal 120 opening (or the suitable opening that rearranges) afterwards, the photoresist layer can stand to reflux or other process, so that all edge tilt of opening.Forming sloping edge can reduce and the quantity that forms the relevant stress point of cross tie part by opening.Reflux course also can be quoted auxiliary crosslinked in photoresist, and this will strengthen photoresist to improve the character that it is used for process operation subsequently.In one example, divide several stages to realize refluxing.In the phase I, structure 100 stands about 105 ℃ temperature, rises to 110 ℃ then, rises to 120 ℃ and kept one hour then.In second stage, temperature is increased to 130 ℃, and continues for an hour again.Should be understood that, the temperature that to heighten or to turn down reflux course, to be suitable for process operation subsequently.
One replacement scheme of reflux course is the edge tilt that makes all openings in the first masking material bed of material 140 by sputter or chemical etching.
Fig. 4 shows and quotes active layer 150 structure 100 afterwards.In one aspect, quote active layer 150 to activate exposed surface, in order to quote material subsequently by electroplating process.In one embodiment, the material by sputter such as chromium/titanium-tungsten/gold (Cr/TiW/Au) layer is to form active layer 150.Also can adopt titanium/gold (Ti/Au) or chromium/gold (Cr/Au).Replacement scheme by sputtering sedimentation activated surface structure 100 is with the chemical mode activated surface.In one example, the chloride electrolyte of palladium/tin (Pd/Sn) is quoted a film on the surface of structure 100, and the chemical plating of quoting palladium (Pd) is to form a conductive film.
Fig. 5 shows and quotes the second masking material bed of material 160 and make it form pattern structure 100 afterwards.In one aspect, the second masking material bed of material 160 limits the body shape of the cross tie part that forms subsequently.
Fig. 6 shows and quotes first element material 170 structure 100 afterwards.In one example, first element material 170 is thermostable layer.A kind of especially preferred material such as palladium/cobalt (Pd/Co), usually can be when not being exposed to the temperature that it may be exposed to varying sized elastic alloy material, this material is inertia normally, and is easy to relatively activate.Other material that can be used for first element material 170 comprises nickel, tungsten, rhodium, iron, copper, silver and aluminium, preferably alloy form.In yet another embodiment, active layer 150 can be used as thermostable layer.
In described embodiment, wherein first element material 170 is Pd/Co materials, quotes first element material 170 by electroplating process known in the art.It is suitable quoting first element material that thickness is about 50 to 100 microinch (about 1-3 micron).Perhaps, first element material 170 is made of multilayer, for example the second layer of the ground floor of palladium/cobalt alloy and palladium.
Fig. 7 shows the structure of quoting after second element material 180 100 above the upper surface of first element material 170.In one aspect, second element material 180 comprises a kind of character that makes its volume can be converted to different second volume from one first volume.It is reversible or irreversible that volume changes.For example, the crystallization again by material can obtain irreversibility.A kind of suitable material is that to have atomic percentage be nickel/cobalt (Ni/Co) alloy of 65/35, this material has by electroplating the character that is designed alternatively with following additive, this additive for example, such as asccharin, trisulfonic acid naphthalene (napthalene-tri-sulfonic acid) (NTSA) brightening agent or other 1 grade and 2 grades of brightening agents (leveler), and such as 2-butine-1, the leveler of 4-dihydroxylic alcohols and thiocarbamide and so on (leveler), and the salt such as nickelous bromide and nickel chloride.At the U.S. Patent application No.09/217 that awaits the reply jointly that is filed on December 22nd, 1998, is entitled as " moderate-heat of the metal by being combined with dilution additive is handled the method for making the product with improved material character ", be described in detail the use of additive in the second suitable element material among 589 (FFI-P036D1), this application has been transferred the possession of in assignee of the present invention, and this paper will quote its content as a reference.
In one embodiment, select the amount of quoting of first element material 170 and second element material 180, leave distortion (for example deflection) amount of substrate with control cross tie part structure.As mentioned above, second element material 180 from first volume be converted to one second, different volume.Under the situation of Ni/Co, change in volume is irreversible, second volume less than or be different from (along x, y, z coordinate direction) first volume.
The ratio of the thickness that definite first element material 170 and second element material 180---are first element material 170 of Pd/Co and second element material 180 of Ni/Co---at least is quite important for selecting deflection.According to following relationship, it is that a cross tie part of the cantilever beam of 200 microinch (about 5 microns) is the deflection (δ (h of unit with the mil that Figure 21 shows first element material 170, thickness with Pd/Co 180)) and the variable thickness of second element material 180 of Ni/Co, they change according to following equation:
δ ( h 180 ) = ϵ · l 2 [ ( h 170 + h 180 ) 3 6 h 170 · h 180 + h 170 + h 180 2 ]
In the formula, ε is a shrinking percentage, and l is the length of cross tie part beam, h 170Be the thickness of first element material 170, h 180Be the thickness of second element material 180.In this example, cross tie part is the rectangular beam that length is about 40 mils (about 1000 microns).First element material 170 for 200 microinch (about 5 microns), the thickness range of second element material 180 of Ni/Co is from about 125 to 250 microinch (about 3-6 micron), with the deflection of the distortion that obtains to be about 0.008 inch or 8 mils (about 200 microns) apart from δ 2(h 180).Thereby in this example, the ratio of first element material 170 and second element material 180 can change between about 1.6 to 1 to about 0.8 to 1.In this example, the less second additional element material 180 will produce less deflection.The variable quantity of first element material 170 will shockingly influence the deflection distance.
Because as long as final structure is within the ratio calculated with reasonable tolerance, just can realize the deflection expected, therefore, the thickness range of considering second element material 180 is selected the thickness of first element material 170, just can alleviate for some load of the precision of a certain deposition to disturb.Thereby, can reduce or avoid relating to the misgivings of the uniformity of thickness of coating or the thickness optimization of electroplated structural (for example by chemical machinery or mechanical polishing).Under latter event, if expect this optimization, can suitably provide polishing, this kind polishing and optimized degree adapt, and for example polish several microinch (less than 1 micron).
The transformation of having narrated as caloritropic second element material more than is discussed.Believe that this transformation is the result who constitutes the crystalline texture reorientation of second element material.Should be understood that, the volume that can also change the second suitable element material, for example increase pressure or quote radiation such as ion beam, electron beam, infrared ray or ultraviolet radiation by other external event.
In above discussion, first element material 170 comprises a Pd/Co alloy, and second element material 180 is the Ni/Co alloys that are positioned at first element material, 170 tops.Perhaps, suppose that orientation is identical, first element material 170 can constitute the Ni/Co alloy, and second element material 180 constitutes the Pd/Co alloy.
In one embodiment, quote first and second element materials 170 and 180, change so that stress passes through combination beam element 185, and stress becomes the tensile stress that increases gradually along the direction of leaving substrate.In one case, first element material 170 comprises a Ni/Co alloy, and this alloy has one and becomes the stress of compression from stretching when quoting.In comprising the invocation procedure of plating, additive (for example asccharin) can be added electroplating bath, increase the compression of Ni/Co by hope.Second element material 180 comprises a Pd/Co alloy, and this alloy has a stress when quoting, and this stress is greater than the tension stress of first element 170.Enough tension stresss are that the Pd/Co alloy of electroplating is intrinsic, but can quote additional stress by additive known in the art.In a preferred embodiment, the stress in first element material 170 is compression, and the stress in second element material 180 is tension stress.It is comparatively suitable that the quantity of first element material 170 and second element material 180 is about 0.04 to 20 mil (about 1 to 500 micron).Can be determined by experiment suitable thickness ratio.
After first element material 170 and second element material 180 are cited and form pattern, in one example, structure 100 is heated to 40 ℃-100 ℃, and continues one lax period of first element material 170 that is enough to make Ni/Co.It is lax more form that the appropriate heating of believing Ni/Co can make material creep.Usually the creep in the material is defined as strain part time dependent, that produce by stress.
When temperature raises, the creep under the tension stress that second element material 180 applies of first element material 170.This causes cross tie part 185 distortion (for example, departing from the surface of substrate 110), and reduces the stress quantity in first and second element materials 170 and 180.Thereby, stress relaxation can be seen the actuating force that acts on distortion.
Fig. 8 shows and removes the second masking material bed of material 160 structure 100 afterwards.At second masking material is in the example of photoresist, can realize the removal of the second masking material bed of material 160 with oxygen gas plasma etching (for example oxygen ashing).Other method of removing the second masking material bed of material 160 includes but not limited to: laser ablation and wet chemical etching.In case remove the second masking material bed of material 160, will remove before by the active layer 150 in the zone of the second masking material bed of material, 160 protections.For example, can remove active layer 150 by chemistry known in the art or sputter etching.Fig. 9 shows the structure 100 after the active layer of removing in the exposed region 150.
Figure 10 shows and removes the first masking material bed of material 140 structure 100 afterwards.At first masking material is in the example of photoresist, can suitably remove the first masking material bed of material 140 by several different methods, and these methods comprise oxygen gas plasma etching, laser ablation and wet chemical etching.In case remove, Figure 10 shows has a plurality of substrates 110 that are formed on its lip-deep cross tie part 185.
Figure 11 show make usually structure through heat-treated so that the structure 100 of one or two in first element material 170 and second element material 180 after changing.In illustrated embodiment, transformation is that the volume of second element material 180 changes.In one embodiment, the volume transformation proceeds to 90% at least and finishes, and preferably proceeds to 90-95% and finishes.Can estimate that the volume of second element material 180 changes by the thermal linear expansion coefficient of determining material.In one example, be deposited as second element material that thickness is about the nickel/cobalt of 125 to 175 microinch (about 3-4 micron) and will experience about 0.2% linear change in the time of 10 minutes 310 ℃ of following heat treatments.This kind linear change makes volume contraction, and the volume of first element material 170 keeps constant relatively in one embodiment simultaneously.Change in volume makes the free end of cross tie part towards its fixed base bending.For example, use from the distance h of the surface of substrate 110 1The suitable bending that measures is about 6 to 8 mils (150-200 micron).
As shown in figure 11, the volume of second element material 180 changes the shape that will change cross tie part 185.In other words, having the volume transformation that is tending towards towards free-ended second element material 180 of the cross tie part 185 of its base curve can make first element material 170 of cross tie part 185 and active layer 150 be out of shape similarly.
In some cases, preferably limit the degree of crook of second element material 180.Yet, in one embodiment, preferably obtain transformation or the approximately transformation of 90-95% more than or equal to 90%, with such as forming a reliable cross tie part, for example, reliable aspect deformation behaviour.Under this kind situation, can above structure 100, force a crooked block piece.See also Figure 11, in case substrate 110 is left in cross tie part 185 bendings, and clash into crooked block piece 187 (dotting among the figure), crooked block piece will prevent that bending from further leaving substrate (that is, towards its fixed base).In this kind mode, the material that can select the volume property of transition may select when not having crooked block piece 187.For example, in order to quote a plurality of cross tie parts on substrate 110, each cross tie part has similar form and has the deflection distance h of about 8 mils (about 200 microns) 1, can select the type and the quantity of material (for example first element material 170 and second element material 180), so that caloritropic intrinsic deflection distance is greater than 8 mils (for example, 10-12 mil (about 250-300 micron)).Crooked block piece 187 for example can be placed on the planar substrates apart from surperficial about 8 mil places of substrate 110, can limit the deflection distance of cross tie part between tour.Thereby for example crooked block piece 187 restrictions one z shaft distortion (deflection), cross tie part still can be along x and the distortion of y coordinate plane.Final cross tie part will have the consistent height of surperficial about 8 mils (about 200 microns) apart from substrate 110.
So far, discuss to concentrate on and be positioned at one first element material top, experience and change the transformation of smaller size smaller or different stress levels into and cause the free end bending of cross tie part to leave second element material of substrate.Should be understood that, that other structure also can realize similar result.For example, second element material is positioned at the below of first element material, and has the character that the heat deflection that makes second element material increases material volume.Under this kind situation, should obtain to leave the similar bending of the interconnection of substrate.Equally, can select one first element material, so that the volume that its experience is compared with one second element material with geostationary volume changes.Experienced all such as two kinds of materials that volume changes or to have a performance of other structure of different hot expansion properties to marmem (SMAs) similar.
Figure 12 shows the structure 100 that conformally deposits after the 3rd masking material bed of material 190 above substrate 110.The suitable thickness that is used for the 3rd masking material bed of material 190 is about 0.3-1.5 mil (about 8 to 30 microns).In one embodiment, select the 3rd masking material bed of material 190,, and cover the top of cross tie part 185 so that conformal sedimentary deposit covers for the entire portion of the upper surface of substrate 110 provides fully.In some cases, the structural stability of cross tie part 185 is not enough to support the masking material bed of material by such as spin-on deposition.Can consider assistant depositing technology known in the art is used for this application.CVD or PECVD (plasma-enhanced CVD) are particularly useful for deposition.Other deposition technique such as sputtering sedimentation also is not suitable for providing sufficient edge or surface coverage usually.Many technology of quoting can't be covered the bottom surface of cross tie part 185 or the surface or the short circuit layer 130 of substrate 110, and cross tie part 185 has suppressed this and quoted.
In one aspect, quote a positive electrophoresis resist as the 3rd masking material bed of material 190.Generally speaking, the electrophoresis resist is the photoresist of an electro-deposition, wherein quotes the charged particle of about 1000 to 2000 dusts () in the uniform coating above conductive surface.A kind of suitable positive electrophoresis resist is the Electro Image that buys from the PPG industry company in Pennsylvanian Pittsburgh city Second replacement scheme is to apply positive photoresist by the injection method that can not destroy synthetic cross tie part.In either case, select the 3rd masking material bed of material 190, make it have the thickness that is enough to above cross tie part, basically form an extra play in one aspect, and, cross tie part 185 covers for providing fully (in one embodiment for all), so that additional interconnection material only is directed into the exposed region of cross tie part 185, can not be directed into the surface (for example, not can below cross tie part 185) of substrate 110.
Figure 13 shows the open region that structure 100 is exposed to the upper surface top of synthetic cross tie part.In illustrated embodiment, shielding layer 200 is positioned at structure 100 tops and has upper surface corresponding opening 210 with cross tie part 185.In this embodiment, resemble and manifest traditional positive photoresist.After manifesting, the 3rd masking material bed of material 190 will be stayed in the All Ranges except that the upper surface of cross tie part 185.Structure after Figure 14 shows and manifests.
Figure 15 shows the structure 100 quote three element material 220 above cross tie part 185 after.In one embodiment, three element material 220 is a kind of electric conducting materials, for example, such as nickel-cobalt (for example, 70% nickel-30% cobalt) and so on nickel alloy, this material can have the additive that the elastic force that will increase offers cross tie part 185 (i.e. " elastomeric material "), for example be filed on December 22nd, 1998, be entitled as awaiting the reply jointly of " moderate-heat of the metal by being combined with dilution additive being handled the method for making the product with improved material character ", the U.S. Patent application No.09/217 of common transfer, 589 (FFI-P036D1) and be disclosed in the additive that goes through among the corresponding PCT application No.WO99/14404 on March 25th, 1999, this paper will quote its content as a reference.Generally speaking, quote the three element material 220 that spring constant that thickness is suitable for making cross tie part 185 increases.In one embodiment, quoting thickness is the three element material 220 of all 1 mils according to appointment (about 25 microns), to account for above 90% of the body of cross tie part 185.Perhaps, the cross tie part 185 that comprises three element material 220 forms one and has than the big spring constant of the cross tie part 185 that does not have three element material 220 and can measure flexible cross tie part (for example, spring constant depends in part on the size of cross tie part usually).Be used for such as according to the contact mat of the electronic component of prior art manufacturing or the embodiment that terminal produces effective electric cross tie part that contacts, about 0.2 gram force/mil or bigger spring constant are suitable.The spring constant that should be understood that, expectation can be according to required application change, for example, about 0.01 and 10 gram forces/mil between spring constant, preferably about 0.01 and 2 gram forces/mil between spring constant.These can make extremely thin or very thick structure to the parameter that those skilled in the art play illustration, and this structure has the spring constant of broad range.
Even should be understood that, about 0.01 and 10 gram forces/mil between spring constant, cross tie part 185 can have the spring constant of expectation, need not to comprise the secondary spring material.For example, in the stress relaxation by making material (for example, reduce the stress quantity in first element material 170 and second element material 180) cause in the foregoing description of cross tie part distortion, can quote the spring material of sufficient amount, for example first element material 170 of 0.5 to 1 mil (about 12 to 25 microns) is eliminated the needs of quoting more spring materials at this place.
At three element material 220 is among the embodiment of nickel alloy (for example nickel-cobalt), can deposit three element material 220 by several deposition techniques, includes but not limited to: plating, chemical vapour deposition (CVD), sputtering sedimentation, chemical plating.In one example, deposit three element material 220 by electroplating process.Usually the form with electroplating solution on sale on the market or groove applies three element material 220.Then, between the anode of cross tie part 185 and plating cell (not shown), apply electric current.The negative electrical charge that accumulates on the cross tie part 185 makes the metal ion in the electroplating solution be reduced to metallic state, and three element material 220 is coated on the cross tie part 185.
Relate to electrolysis at some and quote under the situation of material, three element material 220 had better not be electroplated on second element material 180 of undressed Ni/Co alloy to quote material.Because the oxidation potential of nickel or Ni/Co alloy, they are not the good receiving plane that is used for electroplating process usually.The technology of improving the reception character of nickel or Ni/Co alloy comprises: after quoting second element material 180 (for example, before a large amount of oxidations of Ni/Co), immediately thin copper (Cu) layer of about 10-100 microinch (about 3 microns) is quoted (for example electroplating) to second element material 180.Perhaps, after quoting second element material 180, cross tie part 185 can be placed on the groove of hydrochloric acid (HCl)---in " discharge groove ", so that the surface active of Ni/Co alloy can be quoted three element 220 then.
Figure 16 shows on the surface of three element material 220 the optional structure of quoting after the contact material 230 100.In one example, contact material 230 reduces the resistivity of three element material 220, and provides the contact metallurgical property to formed interconnection structure.Suitable contact material includes but not limited to: gold (Au), palladium (Pd), rhodium (Rh) and silver (Ag) and alloy thereof.In one embodiment, the contact material 230 that thickness is about 30 microinch (about 0.75 micron) refers to the surface of three element material 220.
Figure 17 shows and removes the 3rd masking material bed of material 190 structure 100 afterwards.At the 3rd masking material bed of material 190 is among the embodiment of photoresist, can use conventional method to remove the 3rd masking material bed of material 190, for example plasma etching (for example oxygen ashing), laser ablation or wet chemical etching.After removing the 3rd masking material bed of material 190, form cross tie part 185 on the substrate 110 with independent sector.In described embodiment, cross tie part 185 is the synthetic cross tie parts that are made of active layer 150, first element material 170, second element material 180, three element material 220 and contact material 230.At this moment, structure 100 can be through heat-treated, to improve the character of cross tie part 185.Be filed on December 22nd, 1998, be entitled as the U.S. Patent application No.09/217 that awaits the reply jointly of " moderate-heat of the metal by being combined with dilution additive is handled the method for making the product with improved material character ", be described in detail this heat treatment among 589 (FFI-P036D1), and transferred the possession of assignee in the application, for example, continued 10 minutes or under 300 ℃, continue the moderate-heat processing with the character of improvement Ni/Co alloy in 600 minutes under it is included in 350 ℃.Point out that as reference paper different heat treatment plans are applicable to different materials.Equally, in this, use the expose portion of the method removal short circuit layer 130 such as plasma etching (for example oxygen ashing), laser ablation or wet chemical etching.Perhaps, in this, can on short circuit layer 130, form suitable pattern vestige by solvent, etchant or mechanical device.
Figure 18 shows structurally square and quotes stop material 240 structure 100 afterwards on every side.Quote stop material 240, so that the synthetic cross tie part of restriction moves when contact such as contact mat of electronic component or terminal.In one embodiment, referring to Figure 17, the height h at the tip of the synthetic cross tie part that begins from the surface of substrate 110 2Be about 5-15 mil (about 250-400 micron).The desirable deflection value that is used for cross tie part 185 can be defined as about 3 mils (about 75 microns).Thereby in one example, stop material 240 deposits to thickness and is about 2-12 mil (about 50-300 micron), so that the height h of cross tie part 185 is provided in the top of the stop material 240 of about 3 mils (about 75 microns) 2In one embodiment, but stop material 240 is insulating material of the material of optical imagery such as SU-8, and this material is the negative photoresist of buying from the Microchem company in Massachusetts newton city.Other material that is used for stop material 240 comprises silicon nitride or silicon oxynitride or from Ciba special chemical article company (Basel, SUI, the Probelec that www.cibasc.com) buys Be filed on July 13rd, 1998, be entitled as the awaiting the reply jointly of " interconnecting assembly and method ", the U.S. Patent application No.09/114 of common transfer, proposed going through of suitable motion-stopping structure and uses thereof among 586 (FFI-P056), this paper will quote its content as a reference.
After the stop material 240 of right quantity was referred to substrate 110 tops, stop material 240 formed pattern.In the example of negative photoresist, expose stop material 240 by a shielding layer, so that the zone around the fixed part 112 exposes.Because stop material 240 is photoresists of bearing, therefore, these zones that shielding layer is not exposed remove photoresist (and expose portion of reservation photoresist) because will being manifested.The stop material 240 that Figure 19 shows a part of substrate 110 tops of the standing part 112 that comprises cross tie part 185 forms pattern structure 100 afterwards.In this embodiment, stop material 240 makes cross tie part 185 some be arranged restrictedly towards substrate 110 deflections.For example, when one second electronic component during towards substrate 110, stop material 240 can make electronic component stop.
Figure 20 shows the cross tie part 185 that is coated with contact material 250, for example applies the nothing electricity gold (Au) of several microinch (about 1-10 micron).This can improve the electric conductivity (for example, reducing resistance) of cross tie part, and the corrosion resistance of adding.Should be understood that, that in the present embodiment coating 250 is optional.
In described embodiment, cross tie part 185 is synthetic cross tie parts.Should be understood that, that for application-specific the formation of the cross tie part 185 of the core of first element material 170 and second element material 180 can be very sufficient, needn't quote additional elastomeric material (for example, three element material 200).A kind of like this cross tie part can be formed with the coating of contact material (for example Au).Simultaneously, it is to be further understood that except ternary material 220, can add the add ons material, with elasticity such as the increase cross tie part.In this kind mode, can adopt and quote the similar procedure of processing of three element material 220 described steps.Under those situations, therefore the damage of relevant cross tie part usually and not obvious can use more traditional masking material form in the applying of the additional masking material bed of material.
Figure 22-27 shows another embodiment that forms cross tie part of the present invention, and this embodiment shows the process that the pattern of setting up according to the second masking material bed of material 160 makes first element material, the 170 formation patterns of active layer top from structure shown in Figure 6.In one example, first element material 170 is the heat stable materials such as the Pd/Co alloy.In Figure 22, for example remove the second masking material bed of material 160 by oxygen gas plasma etching (for example, oxygen ashing), wet chemical etching or laser ablation.
Figure 23 shows and quotes marmem (SMA) material 380 material 100 afterwards.SMA is when being subjected to suitable process (normally thermal procession), shows that it gets back to the metal material group of the ability of some previously defined shape or size.In case shape changes, this kind material can recover strain substantially or produce significant power.Some Ni-Ti alloy and acid bronze alloy satisfy this standard.Acid bronze alloy (for example copper-zinc alloy) is specially adapted to electroplate processing.
In one example, SMA material 380 is stretched over martensite (low temperature) state from remember condition or shape, promptly in this example, martensitic state is an extended state.In this martensitic state, SMA material 380 is such as its length and the width dimensions sheet material greater than remember condition.
As shown in figure 23, use such as adhesive (for example epoxy resin) or eutectic method (for example using golden eutectic) are layered in SMA material 380 top of first element material 170.Then, as shown in figure 24, use such as photolithographic techniques to make the stacked SMA material 380 that is in its martensitic state form pattern, become the beam that is positioned at first element material, 170 tops that form pattern.Then, as shown in figure 25, remove the first masking material bed of material 140, to show the cross tie part of a plurality of first element materials 170 by suitable technology, each cross tie part has the beam of a stacked SMA material 380 thereon, and the surface of the cantilever beam of each structure and substrate 110 separates a height h 3Insert one in passing, Figure 25 shows the sectional view of the wall scroll beam of SMA material 380, and the beam that is in its martensitic state or stress state has length a and thickness t.
Figure 26 shows the structure after the heat treatment, and in some sense, this heat treatment changes SMA material 380 into high temperature austenite phase or remember condition from its martensitic state.Figure 26 comprise one be in its remember condition, have length a ' and thickness t ' the insertion figure of SMA material 380.In remember condition, SMA material 380 has the size that is different from its martensitic state.The insertion of Figure 26 illustrates the SMA material 380 that is in its remember condition, this material have length (a '＜a) with less than the width of martensite or strain regime.
For causing SMA material 380 to change its austenite phase (remember condition) into, structure is subjected to the heat treatment of the temperature on temperature changes the austenite phase at SMA material 380 the transition temperature.More than transition temperature, SMA material 380 will become its remember condition again, and film is shunk.By twin crystal form or bimetallism, in this case, the end of the composite beam of the SMA material 380 and first element material 170 will be to its base curve.By this way, can obtain the expectation bending of cross tie part, for example begin the height h of about 8 mils (about 200 microns) from the surface of substrate 110 4In some cases, preferably by limit the amount of bow of cross tie part such as a crooked block piece (for example top block piece) in conjunction with Figure 11 and appended text narration.
In above embodiment, SMA material 380 is a kind of heat deflection to the transformation of its remember condition.Should be understood that, can be in conjunction with the external drive that replaces (for example, pressure changes or radiation) to cause transformation.Under with the caloritropic situation of temperature that raises, can prolong and cause this caloritropic Temperature Treatment, make 170 annealing of first element material, with stress that improves material and the stability that increases deformable material.
Change to its remember condition at SMA material 380, and make after 170 distortion of first element material, in one example, can remove SMA material 380, stay the cross tie part (with active layer 150) of first element material 170.In one case, can directly remove SMA material 380 by plasma or chemical etching or laser ablation.Perhaps, adopting under the situation of adhesive between the SMA material 380 and first element material 170, adhesive can be dissolved so that SMA material 380 separates with first element material 170.Figure 27 shows the structure that causes, and wherein SMA material 380 has been removed, has stayed first cross tie part of first element material 170.
In another embodiment, can stay the SMA material.The hardness of SMA material helps total spring constant, gives a sufficiently high spring constant under the situation that needn't add more materials.
Can select to make the thickness of the SMA material of thicker relatively beam (material 170) deflection separately.This thick beam desired state can be reached, keeping this new shape, and the SMA material can be removed, so that the structure that causes has very high spring constant.
Figure 28 shows a final structure that forms according to present embodiment.Structure is similar to Figure 20, and shows three sectional views that are formed on the lip-deep cross tie part of substrate 110.Each cross tie part comprises first element material 170 and the three element material of being made by the nickel alloy such as the Ni/Co that can have additive (for example Co of 70% Ni-30%) 220, and this material is the spring force that cross tie part (i.e. " spring material ") provides increase.Usually, quote three element material 220, so that its thickness is suitable for making the spring constant of cross tie part to be increased to suitable degree.According to prior art, surpass cross tie part body 90%, the thickness of about 1 mil (about 25 microns) is suitable.Figure 28 also show quote thickness be about 30 microinch (about 0.75 micron), by the optional contact material of making such as gold (Au), palladium (Pd), rhodium (Ph) and silver-colored (Ag) and alloy thereof 230.Also show optional contact material 250 among this figure, for example be coated with the nothing electricity gold (Au) of several microinch (about 1-10 micron).At last, Figure 28 shows optional stop material 240, and in one case, this stop material can be used for limiting the deflection of cross tie part.Quoting of each material is all similar with the content of top Figure 12 of combination-20 and appended text narration.
Among others, more than describe showing the cross tie part with intended shape and spring constant and the manufacturing of cross tie part.This manufacturing technology has been utilized the advantage of the characteristic of some metal material with deformation properties, so that it is out of shape in response to external drive (for example heat), to form improved cross tie part.
Cross tie part as herein described is suitable for multiple use, includes but not limited to: use with electronic component, contact to form temporarily or permanently, or for good and all contact electronic component after interim earlier.In the manufacturing process that forms integrated circuit (IC) chip or small pieces, can adopt this contact.For example, cross tie part of the present invention can form temporary contact, becomes the part of " wearing out " and/or plays test chip or the effect of small pieces with all pads in conjunction with odd number or a non-odd number chip or small pieces, so that chip or small pieces are connected to testing apparatus.An example of permanent connection be to use cross tie part of the present invention (can comprise the cross tie part that is used for when test one chip or small pieces, forming provisional connection) with chip or small pieces by be connected electrically to external system components (a for example PCB) such as an assembly.
For example, be described in detail manufacturing process in the U.S. Patent No. 5,829,128 of common transfer, this paper will quote its content as a reference.Cross tie part of the present invention can use to be become the testing equipment of probe such as extending from substrate, for example be used for test as U.S. Patent No. 5,829,128 and the U.S. Patent No. 5 of common transfer, 974, the content that the probe card plate of 662 described electronic components or the space transformer of probe card plate, this paper will be quoted them as a reference.Cross tie part of the present invention also can use in U.S. Patent No. 5,829, during the interpolater of two electronic components of 128 described connections is used.
U.S. Patent No. 5,829,128 have also narrated the cross tie part that is directly connected in semiconductor chip (for example pad), to eliminate the needs for corresponding assembly.Cross tie part as herein described is fit to this application equally.The U.S. Patent No. 5,772,451 of common transfer has been narrated the socket applications that is fit to interconnection applications as herein described, and this application can make electronic component (for example semiconductor assembly) be installed in releasedly on the circuit board, and this paper will quote its content as a reference.An example is that the cross tie part that is connected in first substrate links to each other by the pressure connection and such as the corresponding contact terminal on second substrate (a for example bearing substrate).Second contact terminal comprises the outside tie point that common elements (for example first and second substrates) and the 3rd on-chip corresponding the 3rd contact terminal such as a circuit board are connected.
In the detailed description formerly, narrate the present invention in conjunction with its specific embodiment.Yet, under the situation of the of the present invention wide spirit and scope that do not deviate from claims elaboration, obviously can make numerous modifications and variations.Therefore, detailed description and accompanying drawing should be considered to schematically, rather than restrictive.

Claims (40)

1. cross tie part, it comprises:
One first element material, described first element material are suitable for being connected to a substrate at the first end place, and second end of first element can discharge from described substrate; And
One second different element material, described second element material is connected to described first element material,
Wherein, one of described first element material and described second element material can change in response to outside stimulus, thereby when second end of first element material when described substrate discharges, cross tie part had first geometry before applying outside stimulus, and after applying outside stimulus, has second geometry, second geometry is different from first geometry
Wherein, the transformation of one of described first element material and described second element material is nonvolatil, thereby after the cancellation outside stimulus, described cross tie part can not turn back to first geometry.
2. cross tie part as claimed in claim 1 is characterized in that, the size of described cross tie part is suitable for directly contacting the semiconductor device.
3. cross tie part as claimed in claim 1 is characterized in that, described second element material covers above described first element material, and the volume of described second element material is increased.
4. cross tie part as claimed in claim 1 is characterized in that outside stimulus comprises heat.
5. cross tie part as claimed in claim 1 is characterized in that, described first element material and described second element material all can change in response to outside stimulus.
6. cross tie part as claimed in claim 1 is characterized in that, quotes at least a in described first element material and described second element material by plating.
7. cross tie part as claimed in claim 1 is characterized in that, quotes at least a in described first element material and described second element material by sputter.
8. cross tie part as claimed in claim 1 is characterized in that, quotes at least a in described first element material and described second element material by chemical plating.
9. cross tie part as claimed in claim 1 is characterized in that, described first element material comprises palladium and alloy thereof.
10. cross tie part as claimed in claim 1 is characterized in that, described first element material is the alloy that comprises palladium/cobalt, and active layer comprises one of copper and mickel.
11. cross tie part as claimed in claim 10 is characterized in that, described second element material also comprises nickel.
12. cross tie part as claimed in claim 11 is characterized in that, described second element material comprises a nickel alloy.
13. cross tie part as claimed in claim 1 is characterized in that, one of described first element material and described second element material are the previous shape of determining in response to outside stimulus with alteration of form.
14. cross tie part as claimed in claim 13 is characterized in that, described second element material is the previous shape of determining in response to outside stimulus with alteration of form, and second element material cover described first element material above.
15. a method that is used to make cross tie part, it comprises:
Quote and be connected an on-chip cross tie part, described cross tie part comprises one first element material and one second element material;
Described cross tie part discharges at one end and leaves described substrate; And
Apply outside stimulus and the characteristic of one of described first element material and described second element material changed, thereby change the geometry of described cross tie part,
Wherein, the transformation of one of described first element material and described second element material is nonvolatil, thereby after the cancellation outside stimulus, described cross tie part can not turn back to first geometry.
16. method as claimed in claim 15 is characterized in that, applies outside stimulus and the characteristic of described first element material and described second element material is all changed.
17. method as claimed in claim 15 is characterized in that, also is included in to apply outside stimulus discharges described cross tie part before from described substrate first end.
18. method as claimed in claim 15 is characterized in that, applies to comprise the described cross tie part of heating.
19. method as claimed in claim 15 is characterized in that, also comprises: before applying, an end of described cross tie part is biased to a second place from a primary importance, the distance on surface that this second place is left described substrate is bigger.
20. method as claimed in claim 15 is characterized in that, also comprises the biasing of the end of limiting described cross tie part.
21. method as claimed in claim 19 is characterized in that, also comprises:
Quote a three element material, described three element material has the elastic property above cross tie part.
22. method as claimed in claim 21, it is characterized in that, described cross tie part is connected on the surface of described substrate, and quotes described three element material above a described cross tie part surface relative with described substrate surface, and the method for quoting described three element material comprises:
Make the masking material of described substrate top form pattern, to have an opening that exposes the surface of described cross tie part; And
Described three element material is referred to the exposed surface of described cross tie part.
23. method as claimed in claim 22 is characterized in that, described the 3rd material is the electrophoresis erosion resistant.
24. method as claimed in claim 22 is characterized in that, quotes the spring element material by electroplating processing.
25. method as claimed in claim 15 is characterized in that, described second element material connects described first element material at a side place relative with described substrate, but described second element material comprises property of transition, and this method also comprises:
After property of transition, remove described second element material.
26. method as claimed in claim 25, it is characterized in that, described second element material comprises a marmem, a cross tie part that forms comprises quotes described second element material that is in martensitic state, the character that changes described second element material comprises and changes described second element material into remember condition, described second element material that is in its remember condition has a volume, and this volume is different from the volume that is in its martensitic state.
27. method as claimed in claim 26 is characterized in that, after property of transition, this method also comprises:
Make described cross tie part annealing.
28. method as claimed in claim 15 is characterized in that, it also comprises:
After changing, at the release end place of described cross tie part described substrate is connected to the contact terminal on the electronic component.
29. method as claimed in claim 28 is characterized in that, it also comprises:
After connecting, test one of described substrate and described electronic component.
30. method as claimed in claim 29 is characterized in that, described electronic component comprises small pieces, and the release end of described cross tie part is connected to a pad of small pieces.
31. cross tie part as claimed in claim 1 is characterized in that, the whole thickness of described cross tie part is between 1 to 500 micron.
32. cross tie part as claimed in claim 1 is characterized in that, the whole thickness of described cross tie part is greater than 25 microns.
33. cross tie part as claimed in claim 1 is characterized in that, the whole thickness of described cross tie part is 28 microns.
34. cross tie part as claimed in claim 1 is characterized in that, first element material has 1 to 3 micron thickness.
35. cross tie part as claimed in claim 1 is characterized in that, first element material has 5 microns thickness, and second element material has 3 to 6 microns thickness.
36. cross tie part as claimed in claim 1 is characterized in that, first element material has 12 to 25 microns thickness.
37. cross tie part as claimed in claim 1 is characterized in that, the whole thickness of described cross tie part is greater than 1 micron.
38. cross tie part as claimed in claim 1 is characterized in that, one of described first element material and described second element material are changed into size in response to outside stimulus the previous size of determining.
39. cross tie part as claimed in claim 1 is characterized in that, described second element material is changed into the previous size of determining in response to outside stimulus with size, and described second element material is positioned at the top of described first element material.
40. cross tie part as claimed in claim 1, it is characterized in that described cross tie part has conductivity, when having second geometry, the free end of described cross tie part is configured to contact an electric member, and provides between described substrate and described electric member by this and be electrically connected.
CNB018110053A 2000-04-12 2001-03-28 Shaped springs and methds of fabricating and using shaped springs Expired - Fee Related CN100339985C (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US09/547,561 US7458816B1 (en) 2000-04-12 2000-04-12 Shaped spring
US09/547,560 2000-04-12
US09/547,560 US6640432B1 (en) 2000-04-12 2000-04-12 Method of fabricating shaped springs
US09/547,561 2000-04-12

Publications (2)

Publication Number Publication Date
CN1451179A CN1451179A (en) 2003-10-22
CN100339985C true CN100339985C (en) 2007-09-26

Family

ID=27068579

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB018110053A Expired - Fee Related CN100339985C (en) 2000-04-12 2001-03-28 Shaped springs and methds of fabricating and using shaped springs

Country Status (7)

Country Link
EP (1) EP1275150A2 (en)
JP (1) JP2003531495A (en)
KR (2) KR100835027B1 (en)
CN (1) CN100339985C (en)
AU (1) AU2001249567A1 (en)
TW (1) TW546803B (en)
WO (1) WO2001080315A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60115437T2 (en) * 2000-06-20 2006-07-27 Nanonexus, Inc., Fremont TEST SYSTEM OF INTEGRATED CIRCUITS
KR100941360B1 (en) * 2006-07-21 2010-02-11 가부시키가이샤후지쿠라 Ic socket and manufacturing method for the same
ATE503037T1 (en) * 2008-10-17 2011-04-15 Atotech Deutschland Gmbh STRESS-REDUCED NI-P/PD STACKS FOR WAFER SURFACE
US8476749B2 (en) * 2009-07-22 2013-07-02 Oracle America, Inc. High-bandwidth ramp-stack chip package
US8441808B2 (en) * 2010-09-22 2013-05-14 Palo Alto Research Center Incorporated Interposer with microspring contacts
TWI449280B (en) * 2011-01-17 2014-08-11 Hon Hai Prec Ind Co Ltd Testing electrical connector
KR101738421B1 (en) 2015-11-10 2017-05-23 광주과학기술원 Self-deformable Flexible film and Method for Fabricating the same
KR102042052B1 (en) * 2017-03-23 2019-11-08 광주과학기술원 Self-deformable Flexible film and Method for Fabricating the same
KR102114210B1 (en) * 2018-12-17 2020-05-25 주식회사 코리아 인스트루먼트 Probe beam and probe module
CN114108041A (en) * 2021-12-20 2022-03-01 太仓市惠得利弹簧有限公司 Spring surface oxidation resistance treatment process

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61136437U (en) * 1985-02-15 1986-08-25
JPH09213813A (en) * 1996-02-06 1997-08-15 Sony Corp Semiconductor device and manufacture of semiconductor device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5216631A (en) * 1990-11-02 1993-06-01 Sliwa Jr John W Microvibratory memory device
JPH06181301A (en) * 1992-12-14 1994-06-28 Fujitsu Ltd Solid-state image sensing device
US5810609A (en) * 1995-08-28 1998-09-22 Tessera, Inc. Socket for engaging bump leads on a microelectronic device and methods therefor
JPH09213183A (en) * 1996-02-05 1997-08-15 Eiko Takahashi Small-size thermostat
EP1482314B1 (en) * 1996-05-17 2009-11-11 FormFactor, Inc. Microelectronic spring contact element
EP0985231A1 (en) * 1997-05-15 2000-03-15 Formfactor, Inc. Lithographically defined microelectronic contact structures
KR20010024022A (en) * 1997-09-17 2001-03-26 이고르 와이. 칸드로스 Method of making a structure with improved material properties by moderate heat treatment of a metal deposit
US6827584B2 (en) * 1999-12-28 2004-12-07 Formfactor, Inc. Interconnect for microelectronic structures with enhanced spring characteristics

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61136437U (en) * 1985-02-15 1986-08-25
JPH09213813A (en) * 1996-02-06 1997-08-15 Sony Corp Semiconductor device and manufacture of semiconductor device

Also Published As

Publication number Publication date
WO2001080315A3 (en) 2002-03-28
WO2001080315A2 (en) 2001-10-25
AU2001249567A1 (en) 2001-10-30
KR20070093456A (en) 2007-09-18
KR100835027B1 (en) 2008-06-03
CN1451179A (en) 2003-10-22
TW546803B (en) 2003-08-11
KR20020090234A (en) 2002-11-30
JP2003531495A (en) 2003-10-21
EP1275150A2 (en) 2003-01-15
KR100801353B1 (en) 2008-02-05

Similar Documents

Publication Publication Date Title
US6640432B1 (en) Method of fabricating shaped springs
KR100891066B1 (en) Microelectronic contact, method for fabricating microelectronic contact, semiconductor device and contact structure
US20080045076A1 (en) Clamp with spring contacts to attach flat flex cable (FFC) to a circuit board
US7758351B2 (en) Method and system for batch manufacturing of spring elements
JP3386077B2 (en) Probe card assemblies and kits and methods of using them
US6029344A (en) Composite interconnection element for microelectronic components, and method of making same
CN100559660C (en) Be used for printed circuit board (PCB) interconnection device, make the method for this device and have the interconnecting assembly of this device
US20060113107A1 (en) Electrical connector on a flexible carrier
US20090291573A1 (en) Probe card assembly and kit, and methods of making same
CN100339985C (en) Shaped springs and methds of fabricating and using shaped springs
JP2001524258A (en) Contact carrier (tile) for placing spring contacts on a larger substrate
TW200903682A (en) Resilient contact element and methods of fabrication
TW201030913A (en) Manufacturing method for semiconductor devices
US7458816B1 (en) Shaped spring
EP0792519A1 (en) Interconnection elements for microelectronic components
EP0792462A1 (en) Probe card assembly and kit, and methods of using same

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20070926

Termination date: 20110328