CH580339A5 - - Google Patents
Info
- Publication number
- CH580339A5 CH580339A5 CH1724074A CH1724074A CH580339A5 CH 580339 A5 CH580339 A5 CH 580339A5 CH 1724074 A CH1724074 A CH 1724074A CH 1724074 A CH1724074 A CH 1724074A CH 580339 A5 CH580339 A5 CH 580339A5
- Authority
- CH
- Switzerland
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7432—Asymmetrical thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH1724074A CH580339A5 (de) | 1974-12-23 | 1974-12-23 | |
DE2507104A DE2507104C2 (de) | 1974-12-23 | 1975-02-19 | Thyristor für hohe Frequenzen |
JP50149411A JPS6012789B2 (ja) | 1974-12-23 | 1975-12-15 | 2つの安定状態を有する高周波用の半導体素子 |
US05/642,551 US4081821A (en) | 1974-12-23 | 1975-12-19 | Bistable semiconductor component for high frequencies having four zones of alternating opposed types of conductivity |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH1724074A CH580339A5 (de) | 1974-12-23 | 1974-12-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH580339A5 true CH580339A5 (de) | 1976-09-30 |
Family
ID=4423856
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH1724074A CH580339A5 (de) | 1974-12-23 | 1974-12-23 |
Country Status (4)
Country | Link |
---|---|
US (1) | US4081821A (de) |
JP (1) | JPS6012789B2 (de) |
CH (1) | CH580339A5 (de) |
DE (1) | DE2507104C2 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5942989B2 (ja) * | 1977-01-24 | 1984-10-18 | 株式会社日立製作所 | 高耐圧半導体素子およびその製造方法 |
US4278476A (en) * | 1979-12-05 | 1981-07-14 | Westinghouse Electric Corp. | Method of making ion implanted reverse-conducting thyristor |
JPS57201076A (en) * | 1981-06-03 | 1982-12-09 | Fuji Electric Corp Res & Dev Ltd | Photo-arc thyristor |
JPS5896764A (ja) * | 1981-12-03 | 1983-06-08 | Toshiba Corp | ゲ−トタ−ンオフサイリスタ |
EP0283788A1 (de) * | 1987-03-09 | 1988-09-28 | Siemens Aktiengesellschaft | Abschaltbares Leistungshalbleiterbauelement |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL272752A (de) * | 1960-12-20 | |||
GB1052447A (de) * | 1962-09-15 | |||
US3277352A (en) * | 1963-03-14 | 1966-10-04 | Itt | Four layer semiconductor device |
DE1514520B1 (de) * | 1965-07-30 | 1971-04-01 | Siemens Ag | Steuerbares Halbleiterbauelement |
DE1514655A1 (de) * | 1965-12-30 | 1969-08-28 | Siemens Ag | Lawinendiode zur Schwingungserzeugung unter quasistationaeren Bedingungen unterhalb der Grenzfrequenz fuer den Laufzeitfall |
DE1589453A1 (de) * | 1966-06-28 | 1970-04-02 | Asea Ab | Halbleiteranordnung |
US3900771A (en) * | 1970-11-25 | 1975-08-19 | Gerhard Krause | Transistor with high current density |
US3914781A (en) * | 1971-04-13 | 1975-10-21 | Sony Corp | Gate controlled rectifier |
US3943549A (en) * | 1972-03-15 | 1976-03-09 | Bbc Brown, Boveri & Company, Limited | Thyristor |
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1974
- 1974-12-23 CH CH1724074A patent/CH580339A5/xx not_active IP Right Cessation
-
1975
- 1975-02-19 DE DE2507104A patent/DE2507104C2/de not_active Expired
- 1975-12-15 JP JP50149411A patent/JPS6012789B2/ja not_active Expired
- 1975-12-19 US US05/642,551 patent/US4081821A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE2507104A1 (de) | 1976-07-01 |
JPS6012789B2 (ja) | 1985-04-03 |
JPS5186983A (en) | 1976-07-30 |
DE2507104C2 (de) | 1984-08-09 |
US4081821A (en) | 1978-03-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |