CH557199A - Vorrichtung zum tiegelfreien zonenschmelzen eines halbleiterstabes. - Google Patents
Vorrichtung zum tiegelfreien zonenschmelzen eines halbleiterstabes.Info
- Publication number
- CH557199A CH557199A CH393570A CH393570A CH557199A CH 557199 A CH557199 A CH 557199A CH 393570 A CH393570 A CH 393570A CH 393570 A CH393570 A CH 393570A CH 557199 A CH557199 A CH 557199A
- Authority
- CH
- Switzerland
- Prior art keywords
- crucible
- free zone
- zone melting
- semiconductor rod
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/06—Control, e.g. of temperature, of power
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crucibles And Fluidized-Bed Furnaces (AREA)
- General Induction Heating (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19691913881 DE1913881B2 (de) | 1969-03-19 | 1969-03-19 | Vorrichtung zum tiegelfreien Zonenschmelzen |
Publications (1)
Publication Number | Publication Date |
---|---|
CH557199A true CH557199A (de) | 1974-12-31 |
Family
ID=5728595
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH393570A CH557199A (de) | 1969-03-19 | 1970-03-17 | Vorrichtung zum tiegelfreien zonenschmelzen eines halbleiterstabes. |
Country Status (7)
Country | Link |
---|---|
US (1) | US3644151A (de) |
CH (1) | CH557199A (de) |
DE (1) | DE1913881B2 (de) |
FR (1) | FR2039037A5 (de) |
GB (1) | GB1256438A (de) |
NL (1) | NL6918529A (de) |
SE (1) | SE355957B (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2220519C3 (de) * | 1972-04-26 | 1982-03-11 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum tiegelfreien Zonenschmelzen von Halbleiterstäben |
JPS5382603A (en) * | 1976-12-27 | 1978-07-21 | Monsanto Co | Zone refining apparatus for semiconductive material rod |
US4220626A (en) * | 1978-04-13 | 1980-09-02 | Monsanto Company | RF Induction heating circuits for float zone refining of semiconductor rods |
DE3143146A1 (de) * | 1981-10-30 | 1983-05-11 | Siemens AG, 1000 Berlin und 8000 München | Als flachspule ausgebildete induktionsheizspule zum tiegelfreien zonenschmelzen |
DE3226713A1 (de) * | 1982-07-16 | 1984-01-19 | Siemens AG, 1000 Berlin und 8000 München | Als flachspule ausgebildete induktionsheizspule zum tiegelfreien zonenschmelzen |
DE3229461A1 (de) * | 1982-08-06 | 1984-02-09 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zum tiegelfreien zonenschmelzen eines, insbesondere aus silicium bestehenden halbleiterstabes |
DE3836239A1 (de) * | 1988-10-25 | 1990-04-26 | Deutsche Forsch Luft Raumfahrt | Vorrichtung zum behaelterlosen positionieren und schmelzen von elektrisch leitenden materialien |
JP2016157567A (ja) * | 2015-02-24 | 2016-09-01 | 高周波熱錬株式会社 | 加熱装置及び加熱コイル |
-
1969
- 1969-03-19 DE DE19691913881 patent/DE1913881B2/de active Pending
- 1969-12-10 NL NL6918529A patent/NL6918529A/xx unknown
-
1970
- 1970-03-13 US US19290A patent/US3644151A/en not_active Expired - Lifetime
- 1970-03-17 CH CH393570A patent/CH557199A/de not_active IP Right Cessation
- 1970-03-18 FR FR7009703A patent/FR2039037A5/fr not_active Expired
- 1970-03-18 SE SE03678/70A patent/SE355957B/xx unknown
- 1970-03-18 GB GB02943/70A patent/GB1256438A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1913881A1 (de) | 1970-10-22 |
FR2039037A5 (de) | 1971-01-08 |
NL6918529A (de) | 1970-09-22 |
GB1256438A (en) | 1971-12-08 |
DE1913881B2 (de) | 1970-10-22 |
US3644151A (en) | 1972-02-22 |
SE355957B (de) | 1973-05-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |