CH517379A - Halbleitervorrichtung - Google Patents
HalbleitervorrichtungInfo
- Publication number
- CH517379A CH517379A CH897971A CH897971A CH517379A CH 517379 A CH517379 A CH 517379A CH 897971 A CH897971 A CH 897971A CH 897971 A CH897971 A CH 897971A CH 517379 A CH517379 A CH 517379A
- Authority
- CH
- Switzerland
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66363—Thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH897971A CH517379A (de) | 1971-06-18 | 1971-06-18 | Halbleitervorrichtung |
DE19722229260 DE2229260A1 (de) | 1971-06-18 | 1972-06-15 | Halbleitervorrichtung |
GB2792872A GB1399526A (en) | 1971-06-18 | 1972-06-15 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH897971A CH517379A (de) | 1971-06-18 | 1971-06-18 | Halbleitervorrichtung |
Publications (1)
Publication Number | Publication Date |
---|---|
CH517379A true CH517379A (de) | 1971-12-31 |
Family
ID=4346975
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH897971A CH517379A (de) | 1971-06-18 | 1971-06-18 | Halbleitervorrichtung |
Country Status (3)
Country | Link |
---|---|
CH (1) | CH517379A (de) |
DE (1) | DE2229260A1 (de) |
GB (1) | GB1399526A (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2305854A1 (fr) * | 1975-03-26 | 1976-10-22 | Philips Nv | Thyristor a surface passivee |
FR2579023A1 (fr) * | 1985-03-12 | 1986-09-19 | Silicium Semiconducteur Ssc | Composant semiconducteur a tenue en tension amelioree par sillons peripheriques multiples |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2176338A (en) * | 1985-06-06 | 1986-12-17 | Marconi Electronic Devices | Edge contouring in a semiconductor device |
-
1971
- 1971-06-18 CH CH897971A patent/CH517379A/de not_active IP Right Cessation
-
1972
- 1972-06-15 GB GB2792872A patent/GB1399526A/en not_active Expired
- 1972-06-15 DE DE19722229260 patent/DE2229260A1/de not_active Ceased
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2305854A1 (fr) * | 1975-03-26 | 1976-10-22 | Philips Nv | Thyristor a surface passivee |
FR2579023A1 (fr) * | 1985-03-12 | 1986-09-19 | Silicium Semiconducteur Ssc | Composant semiconducteur a tenue en tension amelioree par sillons peripheriques multiples |
Also Published As
Publication number | Publication date |
---|---|
GB1399526A (en) | 1975-07-02 |
DE2229260A1 (de) | 1972-12-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |